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WO2009069286A1 - Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物構造体の製造方法 - Google Patents

Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物構造体の製造方法 Download PDF

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Publication number
WO2009069286A1
WO2009069286A1 PCT/JP2008/003471 JP2008003471W WO2009069286A1 WO 2009069286 A1 WO2009069286 A1 WO 2009069286A1 JP 2008003471 W JP2008003471 W JP 2008003471W WO 2009069286 A1 WO2009069286 A1 WO 2009069286A1
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Prior art keywords
iii nitride
nitride structure
fine
substrate
wall
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Ceased
Application number
PCT/JP2008/003471
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English (en)
French (fr)
Inventor
Katsumi Kishino
Akihiko Kikuchi
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Sophia School Corp
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Sophia School Corp
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Priority to US12/744,648 priority Critical patent/US9680058B2/en
Priority to EP08853703.0A priority patent/EP2221854B1/en
Priority to JP2009543659A priority patent/JP5515079B2/ja
Publication of WO2009069286A1 publication Critical patent/WO2009069286A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10P14/272—
    • H10P14/2908—
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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  • Semiconductor Lasers (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

ＩＩＩ族窒化物構造体が、基板１０２と、基板１０２上に、基板１０２の表面に対して垂直方向に立設され、基板１０２の面内方向に延在する微細壁状構造体１１０と、を備え、微細壁状構造体１１０は、ＩＩＩ族窒化物半導体結晶を含み、微細壁状構造体１１０の高さをｈとし、高さ方向および延在方向と直交する方向における微細壁状構造体の幅をｄとしたとき、ｈがｄよりも大きい。
PCT/JP2008/003471 2007-11-27 2008-11-26 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物構造体の製造方法 Ceased WO2009069286A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/744,648 US9680058B2 (en) 2007-11-27 2008-11-26 Group-III nitride structure including a fine wall-shaped structure containing a group-III nitridesemiconductor crystal and method for producing a group-III nitride structure including a fine wall-shaped structure containing a group-III nitride semiconductor crystal
EP08853703.0A EP2221854B1 (en) 2007-11-27 2008-11-26 Iii nitride structure and method for manufacturing iii nitride structure
JP2009543659A JP5515079B2 (ja) 2007-11-27 2008-11-26 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物構造体の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007306654 2007-11-27
JP2007-306654 2007-11-27

Publications (1)

Publication Number Publication Date
WO2009069286A1 true WO2009069286A1 (ja) 2009-06-04

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PCT/JP2008/003471 Ceased WO2009069286A1 (ja) 2007-11-27 2008-11-26 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物構造体の製造方法

Country Status (6)

Country Link
US (1) US9680058B2 (ja)
EP (1) EP2221854B1 (ja)
JP (1) JP5515079B2 (ja)
KR (1) KR20100108351A (ja)
TW (1) TWI482204B (ja)
WO (1) WO2009069286A1 (ja)

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JP2014208571A (ja) * 2013-02-22 2014-11-06 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法
EP3696300A1 (de) 2019-02-18 2020-08-19 Aixatech GmbH Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen
US12126142B2 (en) 2018-11-20 2024-10-22 Sony Group Corporation Nitride semiconductor laser device and method of manufacturing nitride semiconductor laser device
JP2025510562A (ja) * 2022-03-21 2025-04-15 エイエムエス－オスラム インターナショナル ゲーエムベーハー オプトエレクトロニクス部品およびオプトエレクトロニクス部品の製造方法

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DE102011118273A1 (de) * 2011-11-11 2013-05-16 Forschungsverbund Berlin E.V. Herstellung einer Halbleitereinrichtung mit mindestens einem säulen- oder wandförmigen Halbleiter-Element
US11164939B2 (en) * 2018-06-27 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Tunnel field-effect transistor and method for forming the same

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014208571A (ja) * 2013-02-22 2014-11-06 三菱化学株式会社 周期表第１３族金属窒化物結晶およびその製造方法
US10309038B2 (en) 2013-02-22 2019-06-04 Mitsubishi Chemical Corporation Crystal of nitride of group-13 metal on periodic table, and method for producing the same
US10995421B2 (en) 2013-02-22 2021-05-04 Mitsubishi Chemical Corporation Crystal of nitride of group-13 metal on periodic table, and method for producing the same
US12126142B2 (en) 2018-11-20 2024-10-22 Sony Group Corporation Nitride semiconductor laser device and method of manufacturing nitride semiconductor laser device
EP3696300A1 (de) 2019-02-18 2020-08-19 Aixatech GmbH Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen
JP2025510562A (ja) * 2022-03-21 2025-04-15 エイエムエス－オスラム インターナショナル ゲーエムベーハー オプトエレクトロニクス部品およびオプトエレクトロニクス部品の製造方法

Also Published As

Publication number Publication date
TWI482204B (zh) 2015-04-21
EP2221854A1 (en) 2010-08-25
EP2221854B1 (en) 2016-02-24
US9680058B2 (en) 2017-06-13
JPWO2009069286A1 (ja) 2011-04-07
KR20100108351A (ko) 2010-10-06
US20100252836A1 (en) 2010-10-07
TW200924031A (en) 2009-06-01
JP5515079B2 (ja) 2014-06-11
EP2221854A4 (en) 2015-03-25

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