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WO2009066993A3 - Use of selective wee to obtain near planar topography - Google Patents

Use of selective wee to obtain near planar topography Download PDF

Info

Publication number
WO2009066993A3
WO2009066993A3 PCT/MY2008/000159 MY2008000159W WO2009066993A3 WO 2009066993 A3 WO2009066993 A3 WO 2009066993A3 MY 2008000159 W MY2008000159 W MY 2008000159W WO 2009066993 A3 WO2009066993 A3 WO 2009066993A3
Authority
WO
WIPO (PCT)
Prior art keywords
wee
selective
obtain near
wafer
planar topography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/MY2008/000159
Other languages
French (fr)
Other versions
WO2009066993A2 (en
Inventor
Wan Idrus
Khairil Mazwan Mohd Zaini
Anifah Zakaria
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mimos Bhd
Original Assignee
Mimos Bhd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Bhd filed Critical Mimos Bhd
Publication of WO2009066993A2 publication Critical patent/WO2009066993A2/en
Publication of WO2009066993A3 publication Critical patent/WO2009066993A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

A method for removing photoresist using Wafer Edge Exclusion (WEE) from the wafer coding are is disclosed herein. WEE is used at selective layers of the wafer in order to reduce the topographical defect around the wafer coding area.
PCT/MY2008/000159 2007-11-22 2008-11-24 Use of selective wee to obtain near planar topography Ceased WO2009066993A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI20072075 2007-11-22
MYPI20072075 2007-11-22

Publications (2)

Publication Number Publication Date
WO2009066993A2 WO2009066993A2 (en) 2009-05-28
WO2009066993A3 true WO2009066993A3 (en) 2009-10-15

Family

ID=40668027

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MY2008/000159 Ceased WO2009066993A2 (en) 2007-11-22 2008-11-24 Use of selective wee to obtain near planar topography

Country Status (1)

Country Link
WO (1) WO2009066993A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010059550A (en) * 1999-12-30 2001-07-06 박종섭 Method for manufacturing a semiconductor device
US20030181058A1 (en) * 2002-03-19 2003-09-25 Taiwan Semiconductor Manufacturing Co., Ltd Photoresist removal from alignment marks through wafer edge exposure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010059550A (en) * 1999-12-30 2001-07-06 박종섭 Method for manufacturing a semiconductor device
US20030181058A1 (en) * 2002-03-19 2003-09-25 Taiwan Semiconductor Manufacturing Co., Ltd Photoresist removal from alignment marks through wafer edge exposure

Also Published As

Publication number Publication date
WO2009066993A2 (en) 2009-05-28

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