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WO2009057665A1 - 薄膜能動素子群、薄膜能動素子アレイ、有機発光装置、表示装置および薄膜能動素子群の製造方法 - Google Patents

薄膜能動素子群、薄膜能動素子アレイ、有機発光装置、表示装置および薄膜能動素子群の製造方法 Download PDF

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Publication number
WO2009057665A1
WO2009057665A1 PCT/JP2008/069697 JP2008069697W WO2009057665A1 WO 2009057665 A1 WO2009057665 A1 WO 2009057665A1 JP 2008069697 W JP2008069697 W JP 2008069697W WO 2009057665 A1 WO2009057665 A1 WO 2009057665A1
Authority
WO
WIPO (PCT)
Prior art keywords
active element
thin film
film active
element group
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/069697
Other languages
English (en)
French (fr)
Inventor
Tomonori Matsumuro
Kenji Kasahara
Yukiya Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to EP08845687A priority Critical patent/EP2207208A4/en
Priority to CN200880113516.XA priority patent/CN101842904B/zh
Priority to US12/740,287 priority patent/US8344390B2/en
Publication of WO2009057665A1 publication Critical patent/WO2009057665A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)

Abstract

　有機薄膜トランジスタ群の製造の簡便性を高めて、さらに製造コストを抑制する。ソース電極およびドレイン電極の間のチャネル領域に半導体のチャネル層が形成されてなる駆動能動素子と、ソース電極およびドレイン電極の間のチャネル領域に半導体のチャネル層が形成されてなるスイッチ能動素子であって、前記駆動能動素子をスイッチングするスイッチ能動素子と、を備え、前記駆動能動素子および前記スイッチ能動素子は、互いにチャネル幅の方向において離間して形成され、前記駆動能動素子の前記チャネル領域が属する直線と前記スイッチ能動素子の前記チャネル領域が属する直線とが平行になるよう、前記駆動能動素子および前記スイッチ能動素子が形成された薄膜能動素子群が提供される。
PCT/JP2008/069697 2007-10-31 2008-10-29 薄膜能動素子群、薄膜能動素子アレイ、有機発光装置、表示装置および薄膜能動素子群の製造方法 Ceased WO2009057665A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08845687A EP2207208A4 (en) 2007-10-31 2008-10-29 ACTIVE THIN FILM ELEMENT GROUP, ACTIVE THIN FILM ELEMENT ARRAY, ORGANIC LIGHT ARRANGEMENT, DISPLAY ARRANGEMENT AND METHOD FOR PRODUCING AN ACTIVE THIN FILM ELEMENT GROUP
CN200880113516.XA CN101842904B (zh) 2007-10-31 2008-10-29 薄膜有源元件组,薄膜有源元件阵列,有机发光装置,显示装置及薄膜有源元件组的制造方法
US12/740,287 US8344390B2 (en) 2007-10-31 2008-10-29 Thin film active element group, thin film active element array, organic light emitting device, display apparatus, and thin film active element manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-283111 2007-10-31
JP2007283111 2007-10-31

Publications (1)

Publication Number Publication Date
WO2009057665A1 true WO2009057665A1 (ja) 2009-05-07

Family

ID=40591052

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069697 Ceased WO2009057665A1 (ja) 2007-10-31 2008-10-29 薄膜能動素子群、薄膜能動素子アレイ、有機発光装置、表示装置および薄膜能動素子群の製造方法

Country Status (7)

Country Link
US (1) US8344390B2 (ja)
EP (1) EP2207208A4 (ja)
JP (1) JP5612258B2 (ja)
KR (1) KR20100087077A (ja)
CN (1) CN101842904B (ja)
TW (1) TWI466350B (ja)
WO (1) WO2009057665A1 (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4552160B2 (ja) * 2008-07-30 2010-09-29 ソニー株式会社 有機半導体薄膜の形成方法および薄膜半導体装置の製造方法
KR101399609B1 (ko) 2010-02-05 2014-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제조 방법
TWI487111B (zh) * 2012-05-21 2015-06-01 Au Optronics Corp 電晶體結構以及驅動電路結構
JP6243821B2 (ja) * 2014-09-25 2017-12-06 富士フイルム株式会社 トランジスタ、トランジスタアレイ、および、トランジスタの製造方法
CN105428370B (zh) * 2015-11-10 2018-09-04 深圳市华星光电技术有限公司 液晶显示面板及液晶显示装置
KR101872421B1 (ko) * 2016-04-12 2018-06-28 충북대학교 산학협력단 산화물 반도체 기반의 트랜지스터 및 그 제조 방법
CN107579101A (zh) * 2017-08-30 2018-01-12 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007720A (ja) * 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd 多結晶薄膜、薄膜トランジスタアレイ、画像表示装置およびそれらの製造方法
JP2005182061A (ja) * 2003-12-22 2005-07-07 Lg Phillips Lcd Co Ltd 有機電界発光素子とその製造方法
JP2006133762A (ja) * 2004-10-08 2006-05-25 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
WO2006117907A1 (ja) * 2005-04-28 2006-11-09 Sharp Kabushiki Kaisha 半導体素子及び回路基板の製造方法、並びに、半導体素子及び回路基板
JP2007150031A (ja) 2005-11-29 2007-06-14 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4155389B2 (ja) * 2001-03-22 2008-09-24 株式会社半導体エネルギー研究所 発光装置、その駆動方法及び電子機器
US6661180B2 (en) * 2001-03-22 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, driving method for the same and electronic apparatus
KR100544117B1 (ko) * 2003-05-01 2006-01-23 삼성에스디아이 주식회사 박막 트랜지스터를 구비한 평판표시장치
US7105855B2 (en) * 2004-09-20 2006-09-12 Eastman Kodak Company Providing driving current arrangement for OLED device
US7470604B2 (en) * 2004-10-08 2008-12-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP2008042043A (ja) * 2006-08-09 2008-02-21 Hitachi Ltd 表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007720A (ja) * 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd 多結晶薄膜、薄膜トランジスタアレイ、画像表示装置およびそれらの製造方法
JP2005182061A (ja) * 2003-12-22 2005-07-07 Lg Phillips Lcd Co Ltd 有機電界発光素子とその製造方法
JP2006133762A (ja) * 2004-10-08 2006-05-25 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
WO2006117907A1 (ja) * 2005-04-28 2006-11-09 Sharp Kabushiki Kaisha 半導体素子及び回路基板の製造方法、並びに、半導体素子及び回路基板
JP2007150031A (ja) 2005-11-29 2007-06-14 Toppan Printing Co Ltd 薄膜トランジスタ及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2207208A4

Also Published As

Publication number Publication date
JP2009135467A (ja) 2009-06-18
CN101842904B (zh) 2013-03-13
US20100258803A1 (en) 2010-10-14
CN101842904A (zh) 2010-09-22
US8344390B2 (en) 2013-01-01
EP2207208A1 (en) 2010-07-14
KR20100087077A (ko) 2010-08-03
TW200931700A (en) 2009-07-16
TWI466350B (zh) 2014-12-21
EP2207208A4 (en) 2012-03-28
JP5612258B2 (ja) 2014-10-22

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