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WO2009054088A1 - 半導体発光素子およびそれを用いた半導体発光装置とその製造方法 - Google Patents

半導体発光素子およびそれを用いた半導体発光装置とその製造方法 Download PDF

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Publication number
WO2009054088A1
WO2009054088A1 PCT/JP2008/002557 JP2008002557W WO2009054088A1 WO 2009054088 A1 WO2009054088 A1 WO 2009054088A1 JP 2008002557 W JP2008002557 W JP 2008002557W WO 2009054088 A1 WO2009054088 A1 WO 2009054088A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
emitting element
crystalline substrate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002557
Other languages
English (en)
French (fr)
Inventor
Hidenori Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to US12/682,761 priority Critical patent/US20100237382A1/en
Priority to CN2008801114676A priority patent/CN101821867B/zh
Priority to EP08841558A priority patent/EP2204855A1/en
Priority to JP2009537892A priority patent/JPWO2009054088A1/ja
Publication of WO2009054088A1 publication Critical patent/WO2009054088A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10W72/20—
    • H10W72/29—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/884—
    • H10W72/90—
    • H10W72/923—
    • H10W72/9415—
    • H10W72/952—

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  • Led Devices (AREA)

Abstract

【課題】製造工程を増やすことなく、光取出し効率の向上を図ることが可能な半導体発光素子および本半導体発光素子を用いた半導体発光装置を提供する。 【解決手段】単結晶基板に化合物半導体層３を積層し、単結晶基板を長方形に分割して個片化することで形成された半導体発光素子１において、分割された単結晶基板である個片基板２の長尺側面２１と２３は、単結晶基板における結晶構造の劈開面とは異なる面となるように、劈開面に対して所定の角度を成すように形成されている。
PCT/JP2008/002557 2007-10-23 2008-09-17 半導体発光素子およびそれを用いた半導体発光装置とその製造方法 Ceased WO2009054088A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/682,761 US20100237382A1 (en) 2007-10-23 2008-09-17 Semiconductor light emitting element, semiconductor light emitting device using the element, and method for manufacturing the device
CN2008801114676A CN101821867B (zh) 2007-10-23 2008-09-17 半导体发光器件及使用它的半导体发光装置以及该半导体发光装置的制造方法
EP08841558A EP2204855A1 (en) 2007-10-23 2008-09-17 Semiconductor light emitting element, semiconductor light emitting device using the element, and method for manufacturing the device
JP2009537892A JPWO2009054088A1 (ja) 2007-10-23 2008-09-17 半導体発光素子およびそれを用いた半導体発光装置とその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007274998 2007-10-23
JP2007-274998 2007-10-23

Publications (1)

Publication Number Publication Date
WO2009054088A1 true WO2009054088A1 (ja) 2009-04-30

Family

ID=40579198

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002557 Ceased WO2009054088A1 (ja) 2007-10-23 2008-09-17 半導体発光素子およびそれを用いた半導体発光装置とその製造方法

Country Status (7)

Country Link
US (1) US20100237382A1 (ja)
EP (1) EP2204855A1 (ja)
JP (1) JPWO2009054088A1 (ja)
KR (1) KR20100056574A (ja)
CN (1) CN101821867B (ja)
TW (1) TW200939537A (ja)
WO (1) WO2009054088A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110291148A1 (en) * 2010-05-26 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
JP2012028445A (ja) * 2010-07-21 2012-02-09 Mitsubishi Chemicals Corp 半導体素子およびその製造方法
JP2012028444A (ja) * 2010-07-21 2012-02-09 Mitsubishi Chemicals Corp 半導体素子およびその製造方法
JP2014187351A (ja) * 2013-02-20 2014-10-02 Toyoda Gosei Co Ltd 発光装置
US9142712B2 (en) 2013-12-02 2015-09-22 Nichia Corporation Method for manufacturing light emitting element
US9178111B2 (en) 2012-12-18 2015-11-03 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US9640714B2 (en) 2013-08-29 2017-05-02 Nichia Corporation Method for manufacturing light emitting element
US10276757B2 (en) 2016-12-27 2019-04-30 Nichia Corporation Light emitting device and method for manufacturing the same
US10418533B2 (en) 2016-05-31 2019-09-17 Nichia Corporation Light-emitting device having a light-transmissive member including particles of at least one first filler and method for manufacturing the same
JP2021034680A (ja) * 2019-08-29 2021-03-01 中村留精密工業株式会社 レーザースライシング装置及びそれを用いたスライシング方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4792136B2 (ja) 2010-01-18 2011-10-12 パナソニック株式会社 窒化物系半導体素子およびその製造方法
CN103474522B (zh) 2012-06-07 2016-04-13 清华大学 发光二极管的制备方法
JP5234219B1 (ja) * 2012-09-07 2013-07-10 三菱化学株式会社 発光ダイオード素子および発光装置
US10816550B2 (en) 2012-10-15 2020-10-27 Nanocellect Biomedical, Inc. Systems, apparatus, and methods for sorting particles
US10332853B2 (en) * 2014-02-03 2019-06-25 Osaka University Bonding structure and method for producing bonding structure
CN104867965A (zh) * 2014-02-26 2015-08-26 中国科学院苏州纳米技术与纳米仿生研究所 图形化衬底及其制备方法
KR102306671B1 (ko) * 2015-06-16 2021-09-29 삼성전자주식회사 발광 소자 패키지
EP3893280B1 (en) * 2018-12-06 2025-03-12 LG Electronics Inc. Display device using semiconductor light-emitting elements, and method for manufacturing same

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JPH0888201A (ja) * 1994-09-16 1996-04-02 Toyoda Gosei Co Ltd サファイアを基板とする半導体素子
JPH09219560A (ja) * 1995-12-04 1997-08-19 Nichia Chem Ind Ltd 窒化物半導体発光素子の製造方法
JP2002252185A (ja) * 2001-02-23 2002-09-06 Matsushita Electric Ind Co Ltd 窒化物半導体チップの製造方法
JP2002329684A (ja) * 2001-04-27 2002-11-15 Matsushita Electric Ind Co Ltd 窒化物半導体チップ及びその製造方法
JP2004006662A (ja) 2002-03-28 2004-01-08 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体素子
JP2004221529A (ja) * 2002-10-03 2004-08-05 Nichia Chem Ind Ltd 発光ダイオード
JP2007103951A (ja) * 2005-10-07 2007-04-19 Samsung Electro Mech Co Ltd 窒化物系半導体発光素子及びその製造方法
JP2007116153A (ja) * 2005-10-17 2007-05-10 Samsung Electro Mech Co Ltd 窒化物系半導体発光素子
JP2007134443A (ja) * 2005-11-09 2007-05-31 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード
WO2007100038A1 (ja) * 2006-03-01 2007-09-07 Rohm Co., Ltd. 発光素子及びこの発光素子の製造方法
WO2007126158A1 (ja) * 2006-04-27 2007-11-08 Panasonic Corporation 半導体発光素子およびウエハ

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US5585648A (en) * 1995-02-03 1996-12-17 Tischler; Michael A. High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same
US6163557A (en) * 1998-05-21 2000-12-19 Xerox Corporation Fabrication of group III-V nitrides on mesas
JP3852000B2 (ja) * 2001-09-28 2006-11-29 豊田合成株式会社 発光素子
CN100461467C (zh) * 2002-10-03 2009-02-11 日亚化学工业株式会社 发光二极管
KR100693969B1 (ko) * 2003-03-10 2007-03-12 도요다 고세이 가부시키가이샤 고체 소자 디바이스 및 그 제조 방법

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888201A (ja) * 1994-09-16 1996-04-02 Toyoda Gosei Co Ltd サファイアを基板とする半導体素子
JPH09219560A (ja) * 1995-12-04 1997-08-19 Nichia Chem Ind Ltd 窒化物半導体発光素子の製造方法
JP2002252185A (ja) * 2001-02-23 2002-09-06 Matsushita Electric Ind Co Ltd 窒化物半導体チップの製造方法
JP2002329684A (ja) * 2001-04-27 2002-11-15 Matsushita Electric Ind Co Ltd 窒化物半導体チップ及びその製造方法
JP2004006662A (ja) 2002-03-28 2004-01-08 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体素子
JP2004221529A (ja) * 2002-10-03 2004-08-05 Nichia Chem Ind Ltd 発光ダイオード
JP2007103951A (ja) * 2005-10-07 2007-04-19 Samsung Electro Mech Co Ltd 窒化物系半導体発光素子及びその製造方法
JP2007116153A (ja) * 2005-10-17 2007-05-10 Samsung Electro Mech Co Ltd 窒化物系半導体発光素子
JP2007134443A (ja) * 2005-11-09 2007-05-31 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード
WO2007100038A1 (ja) * 2006-03-01 2007-09-07 Rohm Co., Ltd. 発光素子及びこの発光素子の製造方法
WO2007126158A1 (ja) * 2006-04-27 2007-11-08 Panasonic Corporation 半導体発光素子およびウエハ

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8866179B2 (en) * 2010-05-26 2014-10-21 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
US20110291148A1 (en) * 2010-05-26 2011-12-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing same
JP2012028445A (ja) * 2010-07-21 2012-02-09 Mitsubishi Chemicals Corp 半導体素子およびその製造方法
JP2012028444A (ja) * 2010-07-21 2012-02-09 Mitsubishi Chemicals Corp 半導体素子およびその製造方法
US9324916B2 (en) 2012-12-18 2016-04-26 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US9178111B2 (en) 2012-12-18 2015-11-03 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2014187351A (ja) * 2013-02-20 2014-10-02 Toyoda Gosei Co Ltd 発光装置
US9640714B2 (en) 2013-08-29 2017-05-02 Nichia Corporation Method for manufacturing light emitting element
US10084108B2 (en) 2013-08-29 2018-09-25 Nichia Corporation Method for manufacturing light emitting element
US9142712B2 (en) 2013-12-02 2015-09-22 Nichia Corporation Method for manufacturing light emitting element
US9209351B1 (en) 2013-12-02 2015-12-08 Nichia Corporation Method for manufacturing light emitting element
US10418533B2 (en) 2016-05-31 2019-09-17 Nichia Corporation Light-emitting device having a light-transmissive member including particles of at least one first filler and method for manufacturing the same
US11430928B2 (en) 2016-05-31 2022-08-30 Nichia Corporation Light-emitting device with exposed filter particles
US10276757B2 (en) 2016-12-27 2019-04-30 Nichia Corporation Light emitting device and method for manufacturing the same
US10741733B2 (en) 2016-12-27 2020-08-11 Nichia Corporation Light emitting device
JP2021034680A (ja) * 2019-08-29 2021-03-01 中村留精密工業株式会社 レーザースライシング装置及びそれを用いたスライシング方法

Also Published As

Publication number Publication date
KR20100056574A (ko) 2010-05-27
EP2204855A1 (en) 2010-07-07
JPWO2009054088A1 (ja) 2011-03-03
CN101821867B (zh) 2012-01-04
US20100237382A1 (en) 2010-09-23
CN101821867A (zh) 2010-09-01
TW200939537A (en) 2009-09-16

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