[go: up one dir, main page]

WO2009005017A1 - 半導体パッケージおよびその製造方法 - Google Patents

半導体パッケージおよびその製造方法 Download PDF

Info

Publication number
WO2009005017A1
WO2009005017A1 PCT/JP2008/061773 JP2008061773W WO2009005017A1 WO 2009005017 A1 WO2009005017 A1 WO 2009005017A1 JP 2008061773 W JP2008061773 W JP 2008061773W WO 2009005017 A1 WO2009005017 A1 WO 2009005017A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
semiconductor package
substrate
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/061773
Other languages
English (en)
French (fr)
Inventor
Yuki Suto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Priority to CN200880022659A priority Critical patent/CN101689533A/zh
Priority to EP08790715A priority patent/EP2164098A4/en
Publication of WO2009005017A1 publication Critical patent/WO2009005017A1/ja
Priority to US12/648,172 priority patent/US8330268B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10W76/10—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H10W70/09—
    • H10W70/093—
    • H10W70/60—
    • H10W70/614—
    • H10W76/153—
    • H10W76/40—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10W70/099—
    • H10W72/0198—
    • H10W72/073—
    • H10W72/241—
    • H10W72/874—
    • H10W72/9413—
    • H10W74/00—
    • H10W74/019—
    • H10W90/701—

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

　半導体デバイスと、前記半導体デバイスが一面に配置された半導体基板と、前記半導体基板の一面に、間隔を介して対向する一面を有するキャップ基板と、前記半導体基板の一面と前記キャップ基板の一面との間に配置され、前記半導体基板と前記キャップ基板とを接合するスペーサーと、前記キャップ基板に、前記スペーサーとは重ならず、前記半導体デバイスと重なるように設けられたフィルタと、を備える半導体パッケージを提供する。本発明に拠れば、ダイシング工程でのチッピングによるフィルタの剥離を抑制することができる半導体パッケージおよびその製造方法を提供可能である。
PCT/JP2008/061773 2007-06-29 2008-06-27 半導体パッケージおよびその製造方法 Ceased WO2009005017A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880022659A CN101689533A (zh) 2007-06-29 2008-06-27 半导体封装组件及其制造方法
EP08790715A EP2164098A4 (en) 2007-06-29 2008-06-27 SEMICONDUCTOR PACK AND MANUFACTURING METHOD THEREFOR
US12/648,172 US8330268B2 (en) 2007-06-29 2009-12-28 Semiconductor package and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007171915A JP2009010261A (ja) 2007-06-29 2007-06-29 半導体パッケージおよびその製造方法
JP2007-171915 2007-06-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/648,172 Continuation US8330268B2 (en) 2007-06-29 2009-12-28 Semiconductor package and manufacturing method thereof

Publications (1)

Publication Number Publication Date
WO2009005017A1 true WO2009005017A1 (ja) 2009-01-08

Family

ID=40226063

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061773 Ceased WO2009005017A1 (ja) 2007-06-29 2008-06-27 半導体パッケージおよびその製造方法

Country Status (7)

Country Link
US (1) US8330268B2 (ja)
EP (1) EP2164098A4 (ja)
JP (1) JP2009010261A (ja)
KR (1) KR20100025538A (ja)
CN (1) CN101689533A (ja)
TW (1) TW200913239A (ja)
WO (1) WO2009005017A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010095201A1 (ja) * 2009-02-20 2010-08-26 パナソニック株式会社 半導体装置及び半導体装置の製造方法
WO2011035783A1 (de) * 2009-09-24 2011-03-31 Msg Lithoglas Ag Herstellungsverfahren eines gehäuses mit einem bauelement in einem hohlraum und entsprechendes gehäuse sowie verfahren zum herstellen eines halbzeuges und halbzeug
WO2014045633A1 (ja) * 2012-09-24 2014-03-27 オリンパス株式会社 撮像装置、該撮像装置を備える内視鏡
JP2015529394A (ja) * 2012-08-23 2015-10-05 レイセオン カンパニー ウエハーレベルパッケージングされる赤外線フォーカルプレーンアレイの反射防止コーティングされるキャップウエハーにおける応力緩和方法
US11174705B2 (en) 2019-04-30 2021-11-16 Weatherford Technology Holdings, Llc Tubing tester valve and associated methods
US12310132B2 (en) 2019-05-15 2025-05-20 Sony Semiconductor Solutions Corporation Semiconductor package, semiconductor package manufacturing method, and electronic device

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0914350D0 (en) * 2009-08-17 2009-09-30 St Microelectronics Res & Dev Improvements in or relating to filters in an image sensor
CN103201838A (zh) * 2010-06-14 2013-07-10 赫普塔冈微光学有限公司 制造多个光学设备的方法
US9075182B2 (en) * 2011-06-03 2015-07-07 VisEra Technology Company Limited Camera module and spacer of a lens structure in the camera module
KR101980634B1 (ko) * 2011-06-30 2019-05-22 엘지이노텍 주식회사 렌즈 유닛, 및 이를 포함하는 카메라 모듈
KR101980657B1 (ko) * 2011-06-30 2019-05-22 엘지이노텍 주식회사 렌즈 어셈블리의 제조방법
JP5903796B2 (ja) * 2011-08-12 2016-04-13 ソニー株式会社 撮像装置およびカメラモジュール
TWI462266B (zh) * 2012-03-20 2014-11-21 南茂科技股份有限公司 晶片堆疊結構及其製造方法
JP6185813B2 (ja) * 2013-09-30 2017-08-23 三星ダイヤモンド工業株式会社 イメージセンサ用ウエハ積層体の分断方法並びに分断装置
US10720534B2 (en) * 2014-12-24 2020-07-21 Fujikura Ltd. Pressure sensor and pressure sensor module
JP6054501B1 (ja) * 2015-12-17 2016-12-27 株式会社フジクラ 終端装置および終端方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002373977A (ja) * 2001-06-14 2002-12-26 Canon Inc 固体撮像装置
JP2005125447A (ja) * 2003-10-23 2005-05-19 Hitachi Ltd 電子部品およびその製造方法
JP2005136144A (ja) * 2003-10-30 2005-05-26 Kyocera Corp 固体撮像装置
JP2005212017A (ja) * 2004-01-28 2005-08-11 Kyocera Corp 電子部品封止用基板および多数個取り用電子部品封止用基板ならびに電子装置の製造方法
JP2007042741A (ja) * 2005-08-01 2007-02-15 Shinko Electric Ind Co Ltd 電子部品実装構造体及びその製造方法
JP2007171915A (ja) 2005-11-22 2007-07-05 Ricoh Co Ltd 画像形成装置及び画像形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276798B2 (en) * 2002-05-23 2007-10-02 Honeywell International Inc. Integral topside vacuum package
JP2005101911A (ja) * 2003-09-25 2005-04-14 Konica Minolta Opto Inc 撮像装置及び携帯端末
US7303645B2 (en) * 2003-10-24 2007-12-04 Miradia Inc. Method and system for hermetically sealing packages for optics
US8049806B2 (en) * 2004-09-27 2011-11-01 Digitaloptics Corporation East Thin camera and associated methods
US7511262B2 (en) * 2004-08-30 2009-03-31 Micron Technology, Inc. Optical device and assembly for use with imaging dies, and wafer-label imager assembly
JP4381274B2 (ja) 2004-10-04 2009-12-09 シャープ株式会社 半導体装置およびその製造方法
JP2006173557A (ja) * 2004-11-22 2006-06-29 Toshiba Corp 中空型半導体装置とその製造方法
JPWO2006109638A1 (ja) * 2005-04-08 2008-11-06 コニカミノルタオプト株式会社 固体撮像素子及びその製造方法
JP2007129164A (ja) * 2005-11-07 2007-05-24 Sharp Corp 光学装置用モジュール、光学装置用モジュールの製造方法、及び、構造体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002373977A (ja) * 2001-06-14 2002-12-26 Canon Inc 固体撮像装置
JP2005125447A (ja) * 2003-10-23 2005-05-19 Hitachi Ltd 電子部品およびその製造方法
JP2005136144A (ja) * 2003-10-30 2005-05-26 Kyocera Corp 固体撮像装置
JP2005212017A (ja) * 2004-01-28 2005-08-11 Kyocera Corp 電子部品封止用基板および多数個取り用電子部品封止用基板ならびに電子装置の製造方法
JP2007042741A (ja) * 2005-08-01 2007-02-15 Shinko Electric Ind Co Ltd 電子部品実装構造体及びその製造方法
JP2007171915A (ja) 2005-11-22 2007-07-05 Ricoh Co Ltd 画像形成装置及び画像形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2164098A4

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010095201A1 (ja) * 2009-02-20 2010-08-26 パナソニック株式会社 半導体装置及び半導体装置の製造方法
WO2011035783A1 (de) * 2009-09-24 2011-03-31 Msg Lithoglas Ag Herstellungsverfahren eines gehäuses mit einem bauelement in einem hohlraum und entsprechendes gehäuse sowie verfahren zum herstellen eines halbzeuges und halbzeug
CN102598288A (zh) * 2009-09-24 2012-07-18 Msg里松格莱斯股份公司 用于制造带有承载衬底上的结构元件的布置的方法和布置以及用于制造半成品的方法和半成品
CN102598288B (zh) * 2009-09-24 2016-05-04 Msg里松格莱斯股份公司 用于制造带有承载衬底上的结构元件的布置的方法和布置以及用于制造半成品的方法和半成品
EP3297036A1 (de) * 2009-09-24 2018-03-21 MSG Lithoglas GmbH Verfahren zum herstellen einer anordnung mit einem bauelement auf einem trägersubstrat und anordnung sowie verfahren zum herstellen eines halbzeuges
JP2015529394A (ja) * 2012-08-23 2015-10-05 レイセオン カンパニー ウエハーレベルパッケージングされる赤外線フォーカルプレーンアレイの反射防止コーティングされるキャップウエハーにおける応力緩和方法
US9427776B2 (en) 2012-08-23 2016-08-30 Raytheon Company Method of stress relief in anti-reflective coated cap wafers for wafer level packaged infrared focal plane arrays
US10315918B2 (en) 2012-08-23 2019-06-11 Raytheon Company Method of stress relief in anti-reflective coated cap wafers for wafer level packaged infrared focal plane arrays
WO2014045633A1 (ja) * 2012-09-24 2014-03-27 オリンパス株式会社 撮像装置、該撮像装置を備える内視鏡
US9820637B2 (en) 2012-09-24 2017-11-21 Olympus Corporation Image pickup apparatus and endoscope including image pickup apparatus
US11174705B2 (en) 2019-04-30 2021-11-16 Weatherford Technology Holdings, Llc Tubing tester valve and associated methods
US12310132B2 (en) 2019-05-15 2025-05-20 Sony Semiconductor Solutions Corporation Semiconductor package, semiconductor package manufacturing method, and electronic device

Also Published As

Publication number Publication date
EP2164098A1 (en) 2010-03-17
TW200913239A (en) 2009-03-16
KR20100025538A (ko) 2010-03-09
JP2009010261A (ja) 2009-01-15
CN101689533A (zh) 2010-03-31
US20100102437A1 (en) 2010-04-29
US8330268B2 (en) 2012-12-11
EP2164098A4 (en) 2013-03-13

Similar Documents

Publication Publication Date Title
WO2009005017A1 (ja) 半導体パッケージおよびその製造方法
WO2009142391A3 (ko) 발광소자 패키지 및 그 제조방법
WO2009113831A3 (ko) 반도체 패키징용 복합기능 테이프 및 이를 이용한 반도체 소자의 제조방법
WO2009086289A3 (en) Solar cell package for solar concentrator
WO2008152945A1 (ja) 半導体発光装置及びその製造方法
WO2012057517A3 (ko) 화합물 반도체 장치 및 화합물 반도체 제조방법
WO2009102617A3 (en) Device having power generating black mask and method of fabricating the same
CA2889975C (en) Integrated bondline spacers for wafer level packaged circuit devices
WO2010012548A3 (de) Verkapselung, mems sowie verfahren zum selektiven verkapseln
WO2009049958A3 (de) Verbund aus mindestens zwei halbleitersubstraten sowie herstellungsverfahren
WO2013009007A3 (en) Optical member, display device having the same and method of fabricating the same
WO2008011276A3 (en) Microphone module and method for fabricating the same
EP2239773A4 (en) Semiconductor chip package and manufacturing method thereof
WO2011044115A3 (en) Method for thin film thermoelectric module fabrication
WO2007130471A3 (en) Systems and methods for high density multi-component modules
WO2009060693A1 (ja) デバイスおよびデバイス製造方法
WO2013032688A3 (en) Discontinuous patterned bonds for semiconductor devices and associated systems and methods
WO2008105360A1 (ja) 半導体装置の製造方法及び半導体装置の製造装置
WO2009057983A3 (en) Light emitting device package and method for fabricating the same
WO2010039208A3 (en) Guard ring structures and method of fabricating thereof
WO2007124209A3 (en) Stressor integration and method thereof
WO2009082121A3 (en) Semiconductor light emitting device and method of fabricating the same
WO2011043610A3 (ko) 태양광 발전장치 및 이의 제조방법
EP2631940A4 (en) Semiconductor chip package, semiconductor module, and method for manufacturing same
WO2008156294A3 (en) Semiconductor light emitting device and method of fabricating the same

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880022659.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08790715

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20097027099

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008790715

Country of ref document: EP