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WO2009044698A1 - 半導体発光素子および半導体発光素子の製造方法 - Google Patents

半導体発光素子および半導体発光素子の製造方法 Download PDF

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Publication number
WO2009044698A1
WO2009044698A1 PCT/JP2008/067628 JP2008067628W WO2009044698A1 WO 2009044698 A1 WO2009044698 A1 WO 2009044698A1 JP 2008067628 W JP2008067628 W JP 2008067628W WO 2009044698 A1 WO2009044698 A1 WO 2009044698A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting device
semiconductor light
cladding layer
layer
ohmic electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/067628
Other languages
English (en)
French (fr)
Inventor
Takashi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to US12/680,738 priority Critical patent/US8138001B2/en
Priority to CN2008801182122A priority patent/CN101878541B/zh
Priority to KR1020107008771A priority patent/KR101055590B1/ko
Publication of WO2009044698A1 publication Critical patent/WO2009044698A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Led Devices (AREA)

Abstract

　本発明は、第１のクラッド層と、発光層と、第２のクラッド層とが積層されてなる化合物半導体層と、第１のクラッド層に形成される複数の第１のオーミック電極と、第２のクラッド層に形成される複数の第２のオーミック電極と、化合物半導体層の第１のクラッド層上に形成されて第１のオーミック電極と導通される透明導電膜と、透明導電膜上に形成されるボンディング電極と、化合物半導体層の第２のクラッド層側に配置されて第２のオーミック電極と導通される支持板とを備える半導体発光素子を提供する。
PCT/JP2008/067628 2007-10-01 2008-09-29 半導体発光素子および半導体発光素子の製造方法 Ceased WO2009044698A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/680,738 US8138001B2 (en) 2007-10-01 2008-09-29 Semiconductor light-emitting device and method for producing semiconductor light-emitting device
CN2008801182122A CN101878541B (zh) 2007-10-01 2008-09-29 半导体发光元件和半导体发光元件的制造方法
KR1020107008771A KR101055590B1 (ko) 2007-10-01 2008-09-29 반도체 발광 소자 및 반도체 발광 소자의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007257234A JP4892445B2 (ja) 2007-10-01 2007-10-01 半導体発光素子および半導体発光素子の製造方法
JP2007-257234 2007-10-01

Publications (1)

Publication Number Publication Date
WO2009044698A1 true WO2009044698A1 (ja) 2009-04-09

Family

ID=40526127

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067628 Ceased WO2009044698A1 (ja) 2007-10-01 2008-09-29 半導体発光素子および半導体発光素子の製造方法

Country Status (6)

Country Link
US (1) US8138001B2 (ja)
JP (1) JP4892445B2 (ja)
KR (1) KR101055590B1 (ja)
CN (1) CN101878541B (ja)
TW (1) TWI370562B (ja)
WO (1) WO2009044698A1 (ja)

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CN102576781A (zh) * 2009-10-07 2012-07-11 昭和电工株式会社 发光二极管用金属基板、发光二极管及其制造方法
EP2446485A4 (en) * 2009-04-30 2013-01-09 Byd Co Ltd EPITACTIC WAFER AND METHOD OF MANUFACTURING THEREOF

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TW200929601A (en) * 2007-12-26 2009-07-01 Epistar Corp Semiconductor device
US8860183B2 (en) * 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
WO2010143778A1 (ko) * 2009-06-10 2010-12-16 서울옵토디바이스주식회사 반도체 기판, 그 제조 방법, 반도체 소자 및 그 제조 방법
US8481411B2 (en) 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
CN104795313B (zh) 2009-08-26 2017-12-08 首尔伟傲世有限公司 制造半导体基底的方法和制造发光装置的方法
JP5407707B2 (ja) * 2009-09-29 2014-02-05 豊田合成株式会社 半導体発光素子及びその製造方法
JP5570838B2 (ja) * 2010-02-10 2014-08-13 ソウル バイオシス カンパニー リミテッド 半導体基板、その製造方法、半導体デバイス及びその製造方法
KR101125025B1 (ko) 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP5404596B2 (ja) * 2010-12-27 2014-02-05 株式会社東芝 発光素子およびその製造方法
TWI411136B (zh) * 2011-05-10 2013-10-01 Lextar Electronics Corp 半導體發光結構
JP2012248795A (ja) * 2011-05-31 2012-12-13 Toshiba Corp 半導体発光素子およびその製造方法
TWI546979B (zh) * 2012-03-05 2016-08-21 晶元光電股份有限公司 對位接合之發光二極體裝置與其製造方法
JP6068091B2 (ja) * 2012-10-24 2017-01-25 スタンレー電気株式会社 発光素子
TWI565097B (zh) * 2013-02-08 2017-01-01 隆達電子股份有限公司 發光二極體及其製造方法
JP5814968B2 (ja) 2013-03-22 2015-11-17 株式会社東芝 窒化物半導体発光装置
CN105226154B (zh) * 2015-10-27 2019-03-05 天津三安光电有限公司 一种led芯片结构与制造方法
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
DE102017104719A1 (de) 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip
KR102573271B1 (ko) * 2018-04-27 2023-08-31 삼성전자주식회사 반도체 발광소자
KR102746085B1 (ko) 2019-06-24 2024-12-26 삼성전자주식회사 반도체 발광소자 및 디스플레이 장치
CN114639763B (zh) * 2022-05-12 2022-09-06 南昌凯捷半导体科技有限公司 一种具有嵌入式电极的反极性红外led及其制备方法

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JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
JP2005353809A (ja) * 2004-06-10 2005-12-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子

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US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP2588849B2 (ja) 1994-10-26 1997-03-12 國欣 黄 透光導電薄膜応用の半導体結晶結合方法
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EP1658642B1 (en) * 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
KR100616631B1 (ko) 2004-11-15 2006-08-28 삼성전기주식회사 질화물계 반도체 발광 소자 및 그 제조 방법
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
JP2005353809A (ja) * 2004-06-10 2005-12-22 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2446485A4 (en) * 2009-04-30 2013-01-09 Byd Co Ltd EPITACTIC WAFER AND METHOD OF MANUFACTURING THEREOF
US8859315B2 (en) 2009-04-30 2014-10-14 Byd Company Limited Epitaxial wafer and manufacturing method thereof
CN102576781A (zh) * 2009-10-07 2012-07-11 昭和电工株式会社 发光二极管用金属基板、发光二极管及其制造方法

Also Published As

Publication number Publication date
TWI370562B (en) 2012-08-11
CN101878541B (zh) 2013-01-09
US8138001B2 (en) 2012-03-20
KR101055590B1 (ko) 2011-08-08
JP2009088318A (ja) 2009-04-23
JP4892445B2 (ja) 2012-03-07
CN101878541A (zh) 2010-11-03
TW200939535A (en) 2009-09-16
KR20100072043A (ko) 2010-06-29
US20100219436A1 (en) 2010-09-02

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