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WO2008139669A1 - Method for manufacturing thin film transistor and thin film transistor - Google Patents

Method for manufacturing thin film transistor and thin film transistor Download PDF

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Publication number
WO2008139669A1
WO2008139669A1 PCT/JP2008/000489 JP2008000489W WO2008139669A1 WO 2008139669 A1 WO2008139669 A1 WO 2008139669A1 JP 2008000489 W JP2008000489 W JP 2008000489W WO 2008139669 A1 WO2008139669 A1 WO 2008139669A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulation film
semiconductor layer
thin film
film transistor
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/000489
Other languages
French (fr)
Japanese (ja)
Inventor
Makoto Nakazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of WO2008139669A1 publication Critical patent/WO2008139669A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes

Landscapes

  • Thin Film Transistor (AREA)

Abstract

A method for manufacturing a thin film transistor is provided with a semiconductor layer formation step for forming a semiconductor layer (12) on a substrate (10), a laminated film formation step for depositing a first insulation film, a second insulation film and a conductive film in order in such a manner as to cover the semiconductor layer (12), a gate electrode formation step for patterning the conductive film to form a gate electrode (21a) in such a manner as to cross the semiconductor layer (12), a second insulation film removing step for etching the second insulation film in such a manner that the circumferential edge becomes the outer side than the gate electrode (21a) and crosses the semiconductor layer (12), and a first insulation film removing step for etching the first insulation film that is exposed from the second insulation film that is etched in the second insulation film removing step to expose a part of the semiconductor layer (12).
PCT/JP2008/000489 2007-05-14 2008-03-07 Method for manufacturing thin film transistor and thin film transistor Ceased WO2008139669A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-127734 2007-05-14
JP2007127734 2007-05-14

Publications (1)

Publication Number Publication Date
WO2008139669A1 true WO2008139669A1 (en) 2008-11-20

Family

ID=40001895

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000489 Ceased WO2008139669A1 (en) 2007-05-14 2008-03-07 Method for manufacturing thin film transistor and thin film transistor

Country Status (1)

Country Link
WO (1) WO2008139669A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI836583B (en) * 2012-05-10 2024-03-21 日商半導體能源研究所股份有限公司 Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161994A (en) * 1993-12-07 1995-06-23 Sony Corp Method of manufacturing thin film transistor
JPH10209461A (en) * 1997-01-27 1998-08-07 Matsushita Electric Ind Co Ltd Thin film transistor and method of manufacturing the same
JP2000124461A (en) * 1998-10-20 2000-04-28 Matsushita Electric Ind Co Ltd Thin film transistor and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07161994A (en) * 1993-12-07 1995-06-23 Sony Corp Method of manufacturing thin film transistor
JPH10209461A (en) * 1997-01-27 1998-08-07 Matsushita Electric Ind Co Ltd Thin film transistor and method of manufacturing the same
JP2000124461A (en) * 1998-10-20 2000-04-28 Matsushita Electric Ind Co Ltd Thin film transistor and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI836583B (en) * 2012-05-10 2024-03-21 日商半導體能源研究所股份有限公司 Semiconductor device

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