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WO2008133107A1 - 磁気抵抗素子、ｍｒａｍ、及び磁気センサー - Google Patents

磁気抵抗素子、ｍｒａｍ、及び磁気センサー Download PDF

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Publication number
WO2008133107A1
WO2008133107A1 PCT/JP2008/057340 JP2008057340W WO2008133107A1 WO 2008133107 A1 WO2008133107 A1 WO 2008133107A1 JP 2008057340 W JP2008057340 W JP 2008057340W WO 2008133107 A1 WO2008133107 A1 WO 2008133107A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
magnetization
alloy
ferromagnetic
tunnel barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057340
Other languages
English (en)
French (fr)
Inventor
Yoshiyuki Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2009511808A priority Critical patent/JP5429480B2/ja
Publication of WO2008133107A1 publication Critical patent/WO2008133107A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/596—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks
    • G11B5/59683—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks for magnetoresistive heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

　磁気抵抗素子が、固定された磁化を有する磁化固定層と、反転可能な磁化を有する磁化自由層と、前記磁化固定層と前記磁化自由層との間に介設されたトンネルバリアとを具備している。前記トンネルバリアは結晶性を有している。前記磁化自由層及び前記磁化固定層の少なくとも一方は、高スピン分極率層とソフト強磁性層とを備えている。高スピン分極率層は、前記トンネルバリアに隣接し、体心立方格子構造を発現する強磁性元素の合金である第１合金、又は、前記第１合金に対して非磁性元素が混合されたアモルファス若しくは微結晶構造を有する強磁性材料から構成されている。ソフト強磁性層は、前記高スピン分極率層に隣接して前記トンネルバリアに対して反対側に位置し、面心立方格子構造を発現する強磁性元素の合金と非磁性元素とが混合された、アモルファス又は微結晶構造を有する強磁性材料から構成されている。
PCT/JP2008/057340 2007-04-24 2008-04-15 磁気抵抗素子、ｍｒａｍ、及び磁気センサー Ceased WO2008133107A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009511808A JP5429480B2 (ja) 2007-04-24 2008-04-15 磁気抵抗素子、ｍｒａｍ、及び磁気センサー

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-114187 2007-04-24
JP2007114187 2007-04-24

Publications (1)

Publication Number Publication Date
WO2008133107A1 true WO2008133107A1 (ja) 2008-11-06

Family

ID=39925565

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PCT/JP2008/057340 Ceased WO2008133107A1 (ja) 2007-04-24 2008-04-15 磁気抵抗素子、ｍｒａｍ、及び磁気センサー

Country Status (2)

Country Link
JP (1) JP5429480B2 (ja)
WO (1) WO2008133107A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141258A (ja) * 2008-12-15 2010-06-24 Renesas Technology Corp 磁気記憶装置
JP2011119755A (ja) * 2011-02-03 2011-06-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2011159891A (ja) * 2010-02-03 2011-08-18 Ricoh Co Ltd 磁気センサ
JP2015099882A (ja) * 2013-11-20 2015-05-28 旭化成エレクトロニクス株式会社 磁気センサ
KR101584747B1 (ko) * 2009-01-20 2016-01-13 삼성전자주식회사 자기 메모리 소자
CN108732791A (zh) * 2018-06-01 2018-11-02 厦门大学 一种极化率可控的可变波长二维旋光器件及其制备方法
CN109560192A (zh) * 2017-09-26 2019-04-02 Tdk株式会社 层叠结构、磁阻效应元件、磁头、传感器、高频滤波器以及振荡器
CN111864055A (zh) * 2016-09-29 2020-10-30 Tdk株式会社 磁阻效应元件
CN112490351A (zh) * 2020-11-19 2021-03-12 西安交通大学 一种柔性tmr磁阻传感器及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102277490B1 (ko) * 2014-07-18 2021-07-14 삼성전자주식회사 자기 기억 소자 및 그의 형성 방법
US9385307B2 (en) 2014-10-01 2016-07-05 Kabushiki Kaisha Toshiba Magnetoresistive element and method of manufacturing the same
JP6363271B2 (ja) * 2017-07-04 2018-07-25 株式会社東芝 センサ
JP2021044398A (ja) 2019-09-11 2021-03-18 キオクシア株式会社 磁気記憶装置
JP2021044369A (ja) 2019-09-11 2021-03-18 キオクシア株式会社 磁気装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003283001A (ja) * 2002-03-27 2003-10-03 Toshiba Corp 磁気抵抗効果素子およびこれを用いた磁気メモリ
JP2004179187A (ja) * 2002-11-22 2004-06-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
WO2005088745A1 (ja) * 2004-03-12 2005-09-22 Japan Science And Technology Agency 磁気抵抗素子及びその製造方法
JP2006319259A (ja) * 2005-05-16 2006-11-24 Fujitsu Ltd 強磁性トンネル接合素子、これを用いた磁気ヘッド、磁気記録装置、および磁気メモリ装置
JP2007059879A (ja) * 2005-07-28 2007-03-08 Hitachi Ltd 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027197A (ja) * 2005-07-12 2007-02-01 Sony Corp 記憶素子
JP5003109B2 (ja) * 2006-11-14 2012-08-15 富士通株式会社 強磁性トンネル接合素子、その製造方法、及びそれを用いた磁気ヘッド、磁気メモリ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003283001A (ja) * 2002-03-27 2003-10-03 Toshiba Corp 磁気抵抗効果素子およびこれを用いた磁気メモリ
JP2004179187A (ja) * 2002-11-22 2004-06-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
WO2005088745A1 (ja) * 2004-03-12 2005-09-22 Japan Science And Technology Agency 磁気抵抗素子及びその製造方法
JP2006319259A (ja) * 2005-05-16 2006-11-24 Fujitsu Ltd 強磁性トンネル接合素子、これを用いた磁気ヘッド、磁気記録装置、および磁気メモリ装置
JP2007059879A (ja) * 2005-07-28 2007-03-08 Hitachi Ltd 磁気抵抗効果素子及びそれを搭載した不揮発性磁気メモリ

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141258A (ja) * 2008-12-15 2010-06-24 Renesas Technology Corp 磁気記憶装置
KR101584747B1 (ko) * 2009-01-20 2016-01-13 삼성전자주식회사 자기 메모리 소자
JP2011159891A (ja) * 2010-02-03 2011-08-18 Ricoh Co Ltd 磁気センサ
JP2011119755A (ja) * 2011-02-03 2011-06-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2015099882A (ja) * 2013-11-20 2015-05-28 旭化成エレクトロニクス株式会社 磁気センサ
CN111864055A (zh) * 2016-09-29 2020-10-30 Tdk株式会社 磁阻效应元件
CN111864055B (zh) * 2016-09-29 2024-01-26 Tdk株式会社 磁阻效应元件
CN109560192A (zh) * 2017-09-26 2019-04-02 Tdk株式会社 层叠结构、磁阻效应元件、磁头、传感器、高频滤波器以及振荡器
CN108732791A (zh) * 2018-06-01 2018-11-02 厦门大学 一种极化率可控的可变波长二维旋光器件及其制备方法
CN112490351A (zh) * 2020-11-19 2021-03-12 西安交通大学 一种柔性tmr磁阻传感器及其制备方法

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JPWO2008133107A1 (ja) 2010-07-22
JP5429480B2 (ja) 2014-02-26

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