[go: up one dir, main page]

WO2008133107A1 - Magnetoresistive element, mram, and magnetic sensor - Google Patents

Magnetoresistive element, mram, and magnetic sensor Download PDF

Info

Publication number
WO2008133107A1
WO2008133107A1 PCT/JP2008/057340 JP2008057340W WO2008133107A1 WO 2008133107 A1 WO2008133107 A1 WO 2008133107A1 JP 2008057340 W JP2008057340 W JP 2008057340W WO 2008133107 A1 WO2008133107 A1 WO 2008133107A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
magnetization
alloy
ferromagnetic
tunnel barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057340
Other languages
French (fr)
Japanese (ja)
Inventor
Yoshiyuki Fukumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2009511808A priority Critical patent/JP5429480B2/en
Publication of WO2008133107A1 publication Critical patent/WO2008133107A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/596—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks
    • G11B5/59683—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following on disks for magnetoresistive heads
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

This invention provides a magnetoresistive element comprising a magnetization fixation layer with fixed magnetization, a magnetization free layer having reversible magnetization, and a tunnel barrier provided between the magnetization fixation layer and the magnetization free layer. The tunnel barrier is crystalline. At least one of the magnetization free layer and the magnetization fixation layer comprises a high spin polarizability layer and a soft ferromagnetic layer. The high spin polarizability layer is adjacent to the tunnel barrier and is formed of a first alloy as an alloy of a ferromagnetic element capable of developing a body-centered cubic lattice structure, or a ferromagnetic material having an amorphous or microcrystalline structure which is a mixture of the first alloy with a nonmagnetic element. The soft ferromagnetic layer is adjacent to the high spin polarizability layer, is located on the opposite side of the tunnel barrier and is formed of a ferromagnetic material having an amorphous or microcrystalline structure, which is a mixture of an alloy of a ferromagnetic element capable of developing a face-centered cubic lattice structure with a nonmagnetic element.
PCT/JP2008/057340 2007-04-24 2008-04-15 Magnetoresistive element, mram, and magnetic sensor Ceased WO2008133107A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009511808A JP5429480B2 (en) 2007-04-24 2008-04-15 Magnetoresistive element, MRAM, and magnetic sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-114187 2007-04-24
JP2007114187 2007-04-24

Publications (1)

Publication Number Publication Date
WO2008133107A1 true WO2008133107A1 (en) 2008-11-06

Family

ID=39925565

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057340 Ceased WO2008133107A1 (en) 2007-04-24 2008-04-15 Magnetoresistive element, mram, and magnetic sensor

Country Status (2)

Country Link
JP (1) JP5429480B2 (en)
WO (1) WO2008133107A1 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141258A (en) * 2008-12-15 2010-06-24 Renesas Technology Corp Magnetic storage device
JP2011119755A (en) * 2011-02-03 2011-06-16 Toshiba Corp Magnetoresistive element and magnetic random access memory using the same
JP2011159891A (en) * 2010-02-03 2011-08-18 Ricoh Co Ltd Magnetic sensor
JP2015099882A (en) * 2013-11-20 2015-05-28 旭化成エレクトロニクス株式会社 Magnetic sensor
KR101584747B1 (en) * 2009-01-20 2016-01-13 삼성전자주식회사 Magnetic memory element
CN108732791A (en) * 2018-06-01 2018-11-02 厦门大学 A kind of variable wavelength two-dimentional device and preparation method thereof that polarizability is controllable
CN109560192A (en) * 2017-09-26 2019-04-02 Tdk株式会社 Laminated structure, magnetoresistive element, magnetic head, sensor, high-frequency filter, and oscillator
CN111864055A (en) * 2016-09-29 2020-10-30 Tdk株式会社 Magnetoresistive effect element
CN112490351A (en) * 2020-11-19 2021-03-12 西安交通大学 Flexible TMR magnetoresistive sensor and preparation method thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102277490B1 (en) * 2014-07-18 2021-07-14 삼성전자주식회사 Magnetic Memory Device and Method for fabricating the same
US9385307B2 (en) 2014-10-01 2016-07-05 Kabushiki Kaisha Toshiba Magnetoresistive element and method of manufacturing the same
JP6363271B2 (en) * 2017-07-04 2018-07-25 株式会社東芝 Sensor
JP2021044369A (en) 2019-09-11 2021-03-18 キオクシア株式会社 Magnetic device
JP2021044398A (en) 2019-09-11 2021-03-18 キオクシア株式会社 Magnetic storage device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003283001A (en) * 2002-03-27 2003-10-03 Toshiba Corp Magnetoresistive element and magnetic memory using the same
JP2004179187A (en) * 2002-11-22 2004-06-24 Toshiba Corp Magnetoresistive element and magnetic memory
WO2005088745A1 (en) * 2004-03-12 2005-09-22 Japan Science And Technology Agency Magnetoresistive element and its manufacturing method
JP2006319259A (en) * 2005-05-16 2006-11-24 Fujitsu Ltd Ferromagnetic tunnel junction element, magnetic head using the same, magnetic recording device, and magnetic memory device
JP2007059879A (en) * 2005-07-28 2007-03-08 Hitachi Ltd Magnetoresistive element and nonvolatile magnetic memory equipped with the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027197A (en) * 2005-07-12 2007-02-01 Sony Corp Memory element
JP5003109B2 (en) * 2006-11-14 2012-08-15 富士通株式会社 Ferromagnetic tunnel junction device, manufacturing method thereof, magnetic head using the same, and magnetic memory

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003283001A (en) * 2002-03-27 2003-10-03 Toshiba Corp Magnetoresistive element and magnetic memory using the same
JP2004179187A (en) * 2002-11-22 2004-06-24 Toshiba Corp Magnetoresistive element and magnetic memory
WO2005088745A1 (en) * 2004-03-12 2005-09-22 Japan Science And Technology Agency Magnetoresistive element and its manufacturing method
JP2006319259A (en) * 2005-05-16 2006-11-24 Fujitsu Ltd Ferromagnetic tunnel junction element, magnetic head using the same, magnetic recording device, and magnetic memory device
JP2007059879A (en) * 2005-07-28 2007-03-08 Hitachi Ltd Magnetoresistive element and nonvolatile magnetic memory equipped with the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141258A (en) * 2008-12-15 2010-06-24 Renesas Technology Corp Magnetic storage device
KR101584747B1 (en) * 2009-01-20 2016-01-13 삼성전자주식회사 Magnetic memory element
JP2011159891A (en) * 2010-02-03 2011-08-18 Ricoh Co Ltd Magnetic sensor
JP2011119755A (en) * 2011-02-03 2011-06-16 Toshiba Corp Magnetoresistive element and magnetic random access memory using the same
JP2015099882A (en) * 2013-11-20 2015-05-28 旭化成エレクトロニクス株式会社 Magnetic sensor
CN111864055A (en) * 2016-09-29 2020-10-30 Tdk株式会社 Magnetoresistive effect element
CN111864055B (en) * 2016-09-29 2024-01-26 Tdk株式会社 Magneto-resistance effect element
CN109560192A (en) * 2017-09-26 2019-04-02 Tdk株式会社 Laminated structure, magnetoresistive element, magnetic head, sensor, high-frequency filter, and oscillator
CN108732791A (en) * 2018-06-01 2018-11-02 厦门大学 A kind of variable wavelength two-dimentional device and preparation method thereof that polarizability is controllable
CN112490351A (en) * 2020-11-19 2021-03-12 西安交通大学 Flexible TMR magnetoresistive sensor and preparation method thereof

Also Published As

Publication number Publication date
JP5429480B2 (en) 2014-02-26
JPWO2008133107A1 (en) 2010-07-22

Similar Documents

Publication Publication Date Title
WO2008133107A1 (en) Magnetoresistive element, mram, and magnetic sensor
US8786039B2 (en) Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
SG153012A1 (en) Magnetic element with thermally-assisted writing
JP5096702B2 (en) Magnetoresistive element and nonvolatile magnetic memory equipped with the same
TW200626922A (en) Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
SG115622A1 (en) Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer
CN103178205B (en) Method for providing magnetic junctions and magnetic storage comprising the magnetic junctions
WO2007035786A3 (en) Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
WO2009060749A1 (en) Magnetoresistive element and magnetic random access memory
TW200614325A (en) A novel buffer(seed) layer for making a high-performance magnetic tunneling junction mran
WO2005067472A3 (en) Synthetic antiferromagnet structures for use in mtjs in mram technology
JP2017505538A5 (en)
JP2017504208A5 (en)
SG165294A1 (en) Perpendicular magnetic recording medium and method of manufacturing the same
KR20150068294A (en) Method and system for providing an engineered magnetic layer including heusler layers and an amorphous insertion layer
KR102166500B1 (en) Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications
KR102199622B1 (en) Method and system for providing magnetic tunneling juntion elements having easy cone anisotropy
WO2009054180A1 (en) Magnetoresistive effect element and magnetic random access memory
EP2987189B1 (en) Seed layer for perpendicular magnetic anisotropy (pma) thin film
EP1968129A4 (en) InSb THIN FILM MAGNETIC SENSOR AND FABRICATION METHOD THEREOF
WO2009057504A1 (en) Magnetoresistive element, magnetic random access memory, and initialization method thereof
SG118382A1 (en) Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure
WO2009037910A1 (en) Magnetic random access memory, its writing method, and magnetoresistive effect element
WO2009064783A1 (en) Methods and structures for exchanged-coupled magnetic multi-layer structure with improved operating temperature behavior
TW200638358A (en) Magnetoresistive structures and fabrication methods

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08740426

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009511808

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08740426

Country of ref document: EP

Kind code of ref document: A1