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WO2008123431A1 - Procédé d'oxydation au plasma, appareil de traitement au plasma et support d'enregistrement - Google Patents

Procédé d'oxydation au plasma, appareil de traitement au plasma et support d'enregistrement Download PDF

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Publication number
WO2008123431A1
WO2008123431A1 PCT/JP2008/056134 JP2008056134W WO2008123431A1 WO 2008123431 A1 WO2008123431 A1 WO 2008123431A1 JP 2008056134 W JP2008056134 W JP 2008056134W WO 2008123431 A1 WO2008123431 A1 WO 2008123431A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
processing apparatus
recording medium
oxidation method
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/056134
Other languages
English (en)
Japanese (ja)
Inventor
Yoshiro Kabe
Takashi Kobayashi
Toshihiko Shiozawa
Junichi Kitagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020107011839A priority Critical patent/KR101188550B1/ko
Priority to KR1020097020434A priority patent/KR101188553B1/ko
Priority to US12/594,078 priority patent/US8372761B2/en
Priority to CN200880011183XA priority patent/CN101652842B/zh
Publication of WO2008123431A1 publication Critical patent/WO2008123431A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10W10/17—
    • H10P14/6514—
    • H10W10/0145—
    • H10P14/6309—
    • H10P14/6319—
    • H10P14/6336—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)

Abstract

Un film d'oxyde de silicium est formé dans une chambre de traitement d'un appareil de traitement au plasma par la réalisation d'un procédé d'oxydation à un corps, qui doit être traité et a un motif non régulier, à l'aide du plasma. Le film est formé par plasma par application d'une puissance haute fréquence à une table de placement sur laquelle le corps devant être traité est placé, dans les conditions où la proportion d'oxygène dans un gaz de traitement est de 0,5 % ou plus mais de pas plus de 10 % et une pression de traitement se trouve dans une plage de 1,3-665 Pa.
PCT/JP2008/056134 2007-03-30 2008-03-28 Procédé d'oxydation au plasma, appareil de traitement au plasma et support d'enregistrement Ceased WO2008123431A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020107011839A KR101188550B1 (ko) 2007-10-29 2008-03-28 Ｌｔｅ에서의 시스템 정보 업데이트
KR1020097020434A KR101188553B1 (ko) 2007-03-30 2008-03-28 플라즈마 산화 처리 방법 및 플라즈마 처리 장치
US12/594,078 US8372761B2 (en) 2007-03-30 2008-03-28 Plasma oxidation processing method, plasma processing apparatus and storage medium
CN200880011183XA CN101652842B (zh) 2007-03-30 2008-03-28 等离子体氧化处理方法和等离子体处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007091700A JP5138261B2 (ja) 2007-03-30 2007-03-30 シリコン酸化膜の形成方法、プラズマ処理装置および記憶媒体
JP2007-091700 2007-03-30

Publications (1)

Publication Number Publication Date
WO2008123431A1 true WO2008123431A1 (fr) 2008-10-16

Family

ID=39830916

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056134 Ceased WO2008123431A1 (fr) 2007-03-30 2008-03-28 Procédé d'oxydation au plasma, appareil de traitement au plasma et support d'enregistrement

Country Status (6)

Country Link
US (1) US8372761B2 (fr)
JP (1) JP5138261B2 (fr)
KR (1) KR101188553B1 (fr)
CN (1) CN101652842B (fr)
TW (1) TWI487027B (fr)
WO (1) WO2008123431A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110053381A1 (en) * 2008-02-08 2011-03-03 Tokyo Electron Limited Method for modifying insulating film with plasma

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7929798B2 (en) * 2005-12-07 2011-04-19 Micron Technology, Inc. Method and apparatus providing noise reduction while preserving edges for imagers
JP5357487B2 (ja) 2008-09-30 2013-12-04 東京エレクトロン株式会社 シリコン酸化膜の形成方法、コンピュータ読み取り可能な記憶媒体およびプラズマ酸化処理装置
US8809199B2 (en) 2011-02-12 2014-08-19 Tokyo Electron Limited Method of etching features in silicon nitride films
JP2012216667A (ja) * 2011-03-31 2012-11-08 Tokyo Electron Ltd プラズマ処理方法
CN102881592B (zh) * 2011-07-15 2015-08-26 中芯国际集成电路制造(北京)有限公司 半导体器件的制造方法
TWI691084B (zh) * 2012-10-24 2020-04-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102052936B1 (ko) * 2012-11-13 2019-12-06 삼성전자 주식회사 반도체 소자 제조 방법
CN103077883B (zh) * 2013-01-11 2016-08-24 武汉新芯集成电路制造有限公司 一种背照式cmos影像传感器制作方法
US9217201B2 (en) * 2013-03-15 2015-12-22 Applied Materials, Inc. Methods for forming layers on semiconductor substrates
US9627216B2 (en) * 2013-10-04 2017-04-18 Applied Materials, Inc. Method for forming features in a silicon containing layer
US20160218286A1 (en) 2015-01-23 2016-07-28 Macronix International Co., Ltd. Capped contact structure with variable adhesion layer thickness
CN106328593B (zh) * 2015-06-24 2019-05-31 旺宏电子股份有限公司 以金属氧化物作为基底的存储器元件及其制造方法
CN110431653B (zh) * 2017-03-27 2024-01-12 株式会社国际电气 半导体装置的制造方法、记录介质以及基板处理装置
CN112542370B (zh) * 2019-09-23 2024-04-05 中微半导体设备(上海)股份有限公司 一种等离子体处理器及其加热器组件
CN113488383B (zh) * 2021-06-30 2022-11-01 北京屹唐半导体科技股份有限公司 用于处理工件的方法、等离子体处理设备及半导体器件

Citations (3)

* Cited by examiner, † Cited by third party
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WO2004049423A1 (fr) * 2002-11-26 2004-06-10 Hitachi Kokusai Electric Inc. Procede de fabrication de dispositif a semiconducteur
JP2005294551A (ja) * 2004-03-31 2005-10-20 Toshiba Corp シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法
JP2006286662A (ja) * 2005-03-31 2006-10-19 Toshiba Corp シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法

Family Cites Families (9)

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JP4356117B2 (ja) * 1997-01-29 2009-11-04 財団法人国際科学振興財団 プラズマ装置
JP3505493B2 (ja) * 1999-09-16 2004-03-08 松下電器産業株式会社 半導体装置の製造方法
JP4397491B2 (ja) * 1999-11-30 2010-01-13 財団法人国際科学振興財団 １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法
JP4966466B2 (ja) 2000-03-13 2012-07-04 公益財団法人国際科学振興財団 酸化膜の形成方法、酸化膜のスパッタリング方法、酸窒化膜のスパッタリング方法、ゲート絶縁膜の形成方法
US6368941B1 (en) * 2000-11-08 2002-04-09 United Microelectronics Corp. Fabrication of a shallow trench isolation by plasma oxidation
TWI235433B (en) 2002-07-17 2005-07-01 Tokyo Electron Ltd Oxide film forming method, oxide film forming apparatus and electronic device material
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
JP4509864B2 (ja) * 2005-05-30 2010-07-21 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
WO2008041600A1 (fr) * 2006-09-29 2008-04-10 Tokyo Electron Limited Procédé d'oxydation par plasma, appareil de traitement au plasma et support de stockage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004049423A1 (fr) * 2002-11-26 2004-06-10 Hitachi Kokusai Electric Inc. Procede de fabrication de dispositif a semiconducteur
JP2005294551A (ja) * 2004-03-31 2005-10-20 Toshiba Corp シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法
JP2006286662A (ja) * 2005-03-31 2006-10-19 Toshiba Corp シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110053381A1 (en) * 2008-02-08 2011-03-03 Tokyo Electron Limited Method for modifying insulating film with plasma

Also Published As

Publication number Publication date
CN101652842B (zh) 2012-11-14
US20100136797A1 (en) 2010-06-03
CN101652842A (zh) 2010-02-17
KR20090126280A (ko) 2009-12-08
KR101188553B1 (ko) 2012-10-05
US8372761B2 (en) 2013-02-12
JP5138261B2 (ja) 2013-02-06
TW200905750A (en) 2009-02-01
JP2008251855A (ja) 2008-10-16
TWI487027B (zh) 2015-06-01

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