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WO2008111365A1 - 測長機能を備えた走査型電子顕微鏡及び試料寸法測長方法 - Google Patents

測長機能を備えた走査型電子顕微鏡及び試料寸法測長方法 Download PDF

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Publication number
WO2008111365A1
WO2008111365A1 PCT/JP2008/052649 JP2008052649W WO2008111365A1 WO 2008111365 A1 WO2008111365 A1 WO 2008111365A1 JP 2008052649 W JP2008052649 W JP 2008052649W WO 2008111365 A1 WO2008111365 A1 WO 2008111365A1
Authority
WO
WIPO (PCT)
Prior art keywords
measurement
region
length measuring
electron beam
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052649
Other languages
English (en)
French (fr)
Inventor
Takayuki Nakamura
Toshimichi Iwai
Soichi Shida
Mitsuo Hiroyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Priority to DE112008000170T priority Critical patent/DE112008000170T5/de
Priority to KR1020097014936A priority patent/KR101101463B1/ko
Priority to CNA2008800045556A priority patent/CN101606216A/zh
Priority to JP2008509850A priority patent/JPWO2008111365A1/ja
Publication of WO2008111365A1 publication Critical patent/WO2008111365A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

測定対象のパターン形状に起因する測長値の変動を軽減し測長精度を向上させることのできる測長機能を備えた走査型電子顕微鏡及び試料寸法測定方法を提供する。 測長機能を備えた走査型電子顕微鏡（１００）は、電子ビームを放出する電子銃（１）と、試料上に形成されたパターンの測定領域を設定する測定対象領域設定部（５０）と、指定された測定領域を記録する記憶部と、測定領域に応じて電子ビームの照射を制御するビームブランカ部（１１）と、記憶部から指定された測定領域を抽出し、当該測定領域以外の領域では電子ビームをビームブランカ部で遮断し、当該測定領域ではビームブランカ部を通過させた電子ビームを試料上に照射して当該測定領域の画像を取得しパターンの測長を行う制御部（２０）とを有する。測定領域は一対の測定領域であって、当該各測定領域の面積は等しくするようにしても良い。
PCT/JP2008/052649 2007-03-13 2008-02-18 測長機能を備えた走査型電子顕微鏡及び試料寸法測長方法 Ceased WO2008111365A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112008000170T DE112008000170T5 (de) 2007-03-13 2008-02-18 Rasterelektronenmikroskop mit Längenmessfunktion und Größenmessverfahren
KR1020097014936A KR101101463B1 (ko) 2007-03-13 2008-02-18 측정 기능을 구비한 주사형 전자 현미경 및 시료 치수 측정 방법
CNA2008800045556A CN101606216A (zh) 2007-03-13 2008-02-18 具有测长功能的扫描型电子显微镜以及试样尺寸测长方法
JP2008509850A JPWO2008111365A1 (ja) 2007-03-13 2008-02-18 測長機能を備えた走査型電子顕微鏡及び試料寸法測長方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US90661907P 2007-03-13 2007-03-13
US60/906,619 2007-03-13
US92251307P 2007-04-09 2007-04-09
US60/922,513 2007-04-09
US11/821,028 2007-06-21
US11/821,028 US7791022B2 (en) 2007-03-13 2007-06-21 Scanning electron microscope with length measurement function and dimension length measurement method

Publications (1)

Publication Number Publication Date
WO2008111365A1 true WO2008111365A1 (ja) 2008-09-18

Family

ID=39759308

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052649 Ceased WO2008111365A1 (ja) 2007-03-13 2008-02-18 測長機能を備えた走査型電子顕微鏡及び試料寸法測長方法

Country Status (7)

Country Link
US (1) US7791022B2 (ja)
JP (1) JPWO2008111365A1 (ja)
KR (1) KR101101463B1 (ja)
CN (1) CN101606216A (ja)
DE (1) DE112008000170T5 (ja)
TW (1) TWI364536B (ja)
WO (1) WO2008111365A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102435154A (zh) * 2011-09-15 2012-05-02 上海华力微电子有限公司 一种新的关键尺寸监控结构的外形设计
US8222599B1 (en) 2009-04-15 2012-07-17 Western Digital (Fremont), Llc Precise metrology with adaptive milling
US8490211B1 (en) 2012-06-28 2013-07-16 Western Digital Technologies, Inc. Methods for referencing related magnetic head microscopy scans to reduce processing requirements for high resolution imaging
US8989511B1 (en) 2012-06-28 2015-03-24 Western Digital Technologies, Inc. Methods for correcting for thermal drift in microscopy images
JP2017021048A (ja) * 2016-09-30 2017-01-26 株式会社ホロン 電子ビーム測定装置および電子ビーム測定方法
JP2020056677A (ja) * 2018-10-02 2020-04-09 株式会社ホロン 電子ビーム測定装置および電子ビーム測定方法

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US7855362B1 (en) * 2007-10-25 2010-12-21 Kla-Tencor Technologies Corporation Contamination pinning for auger analysis
WO2009113149A1 (ja) * 2008-03-10 2009-09-17 株式会社アドバンテスト パターン測長装置及びパターン測長方法
US8536526B2 (en) * 2008-12-29 2013-09-17 International Business Machines Corporation Methods of operating a nanoprober to electrically probe a device structure of an integrated circuit
JP5542478B2 (ja) * 2010-03-02 2014-07-09 株式会社日立ハイテクノロジーズ 荷電粒子線顕微鏡
US8279418B2 (en) 2010-03-17 2012-10-02 Microsoft Corporation Raster scanning for depth detection
JP2012138316A (ja) * 2010-12-28 2012-07-19 Hitachi High-Technologies Corp マイクロスケール管理機能を備えた荷電粒子線装置
US8633439B2 (en) * 2011-07-01 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for electromagnetic interference shielding for critical dimension-scanning electron microscope
JP6228858B2 (ja) * 2014-02-06 2017-11-08 日本電子株式会社 粒子解析装置、およびプログラム
US10056224B2 (en) * 2015-08-10 2018-08-21 Kla-Tencor Corporation Method and system for edge-of-wafer inspection and review
US11480606B2 (en) * 2016-06-14 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. In-line device electrical property estimating method and test structure of the same
DE102019101155A1 (de) * 2019-01-17 2020-07-23 Carl Zeiss Microscopy Gmbh Verfahren zum Betreiben eines Teilchenstrahlsystems, Teilchenstrahlsystem und Computerprogrammprodukt
TWI860503B (zh) * 2021-04-14 2024-11-01 日商紐富來科技股份有限公司 多電子束畫像取得方法、多電子束畫像取得裝置以及多電子束檢查裝置
DE102022130985A1 (de) * 2022-11-23 2024-05-23 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zum Durchführen des Verfahrens

Citations (5)

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JPH10213427A (ja) * 1997-01-28 1998-08-11 Nikon Corp 回路パターンの寸法測定方法
JPH11260692A (ja) * 1998-03-12 1999-09-24 Jeol Ltd 電子線描画装置
JP2000321040A (ja) * 1999-05-14 2000-11-24 Toshiba Corp パターン寸法測定装置およびパターン寸法測定方法
JP2004125737A (ja) * 2002-10-07 2004-04-22 Advantest Corp パターン幅測長装置、パターン幅測長方法、及び電子ビーム露光装置
JP2004319622A (ja) * 2003-04-14 2004-11-11 Hitachi High-Technologies Corp 電子ビーム描画装置および描画データの診断方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
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JP3512945B2 (ja) * 1996-04-26 2004-03-31 株式会社東芝 パターン形成方法及びパターン形成装置
AU1926501A (en) * 1999-11-23 2001-06-04 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
JP2002008960A (ja) * 2000-06-19 2002-01-11 Advantest Corp ターゲットマーク部材、その製造方法および電子ビーム露光装置
JP3944373B2 (ja) * 2001-10-12 2007-07-11 株式会社日立ハイテクノロジーズ 試料の測長方法、及び走査顕微鏡
JP2004227879A (ja) * 2003-01-22 2004-08-12 Hitachi Ltd パターン検査方法及びパターン検査装置
JP4262592B2 (ja) * 2003-12-26 2009-05-13 株式会社日立ハイテクノロジーズ パターン計測方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10213427A (ja) * 1997-01-28 1998-08-11 Nikon Corp 回路パターンの寸法測定方法
JPH11260692A (ja) * 1998-03-12 1999-09-24 Jeol Ltd 電子線描画装置
JP2000321040A (ja) * 1999-05-14 2000-11-24 Toshiba Corp パターン寸法測定装置およびパターン寸法測定方法
JP2004125737A (ja) * 2002-10-07 2004-04-22 Advantest Corp パターン幅測長装置、パターン幅測長方法、及び電子ビーム露光装置
JP2004319622A (ja) * 2003-04-14 2004-11-11 Hitachi High-Technologies Corp 電子ビーム描画装置および描画データの診断方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8222599B1 (en) 2009-04-15 2012-07-17 Western Digital (Fremont), Llc Precise metrology with adaptive milling
CN102435154A (zh) * 2011-09-15 2012-05-02 上海华力微电子有限公司 一种新的关键尺寸监控结构的外形设计
US8490211B1 (en) 2012-06-28 2013-07-16 Western Digital Technologies, Inc. Methods for referencing related magnetic head microscopy scans to reduce processing requirements for high resolution imaging
US8989511B1 (en) 2012-06-28 2015-03-24 Western Digital Technologies, Inc. Methods for correcting for thermal drift in microscopy images
JP2017021048A (ja) * 2016-09-30 2017-01-26 株式会社ホロン 電子ビーム測定装置および電子ビーム測定方法
JP2020056677A (ja) * 2018-10-02 2020-04-09 株式会社ホロン 電子ビーム測定装置および電子ビーム測定方法
JP7157508B2 (ja) 2018-10-02 2022-10-20 株式会社ホロン 電子ビーム測定装置および電子ビーム測定方法
JP2022173523A (ja) * 2018-10-02 2022-11-18 株式会社ホロン 電子ビーム測定装置および電子ビーム測定方法
JP7368576B2 (ja) 2018-10-02 2023-10-24 株式会社ホロン 電子ビーム測定装置および電子ビーム測定方法
JP2023178358A (ja) * 2018-10-02 2023-12-14 株式会社ホロン 電子ビーム測定装置および電子ビーム測定方法
JP7569432B2 (ja) 2018-10-02 2024-10-17 株式会社ホロン 電子ビーム測定装置および電子ビーム測定方法

Also Published As

Publication number Publication date
TWI364536B (en) 2012-05-21
TW200848725A (en) 2008-12-16
JPWO2008111365A1 (ja) 2010-06-24
DE112008000170T5 (de) 2009-11-19
KR20090094375A (ko) 2009-09-04
US20080224039A1 (en) 2008-09-18
CN101606216A (zh) 2009-12-16
US7791022B2 (en) 2010-09-07
KR101101463B1 (ko) 2012-01-03

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