[go: up one dir, main page]

WO2008146819A1 - 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 - Google Patents

露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 Download PDF

Info

Publication number
WO2008146819A1
WO2008146819A1 PCT/JP2008/059744 JP2008059744W WO2008146819A1 WO 2008146819 A1 WO2008146819 A1 WO 2008146819A1 JP 2008059744 W JP2008059744 W JP 2008059744W WO 2008146819 A1 WO2008146819 A1 WO 2008146819A1
Authority
WO
WIPO (PCT)
Prior art keywords
exposure
exposure apparatus
cleaning
liquid
certain member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/059744
Other languages
English (en)
French (fr)
Inventor
Hiroyuki Nagasaka
Yasushi Yoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of WO2008146819A1 publication Critical patent/WO2008146819A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　露光装置ＥＸは、露光用液体ＬＱを介して露光光ＥＬで基板Ｐを露光する。露光装置ＥＸは、露光光を射出する光学素子１１と、光学素子１１の射出側で移動可能なステージ２，３２と、ステージに搭載された所定部材１５０（Ｃ）と、所定部材を振動させることによって所定部材上に形成されている液浸空間の液体に振動を与える振動発生装置（１０）とを備える。液浸露光装置に用いられる洗浄装置もまた提供される。汚染に起因する性能の劣化を抑制できる。
PCT/JP2008/059744 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 Ceased WO2008146819A1 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-140474 2007-05-28
JP2007140474 2007-05-28
JP2007-177217 2007-07-05
JP2007177217 2007-07-05

Publications (1)

Publication Number Publication Date
WO2008146819A1 true WO2008146819A1 (ja) 2008-12-04

Family

ID=40075059

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059744 Ceased WO2008146819A1 (ja) 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法

Country Status (5)

Country Link
US (2) US8189168B2 (ja)
JP (1) JP2009033111A (ja)
KR (1) KR20100031694A (ja)
TW (1) TW200903589A (ja)
WO (1) WO2008146819A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1036709A1 (nl) * 2008-04-24 2009-10-27 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
EP2131242A1 (en) * 2008-06-02 2009-12-09 ASML Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
NL2004540A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
TWI643027B (zh) 2009-11-09 2018-12-01 尼康股份有限公司 曝光裝置、曝光方法、曝光裝置之維修方法、曝光裝置之調整方法、以及元件製造方法
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
US20120019802A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium
US20120019804A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium
US20120019803A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
US9632426B2 (en) * 2011-01-18 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ immersion hood cleaning
WO2014020595A2 (en) * 2012-07-30 2014-02-06 Technion Research & Development Foundation Limited Energy conversion system
WO2020055665A1 (en) * 2018-09-12 2020-03-19 Lam Research Corporation Method and apparatus for measuring particles
WO2020064265A1 (en) 2018-09-24 2020-04-02 Asml Netherlands B.V. A process tool and an inspection method
CN109622545B (zh) * 2019-01-11 2024-06-04 夏绎 一种在超声波发射面与清洗物表面之间保持清洗水的结构
US11032941B2 (en) * 2019-03-28 2021-06-08 Intel Corporation Modular thermal energy management designs for data center computing
US12427446B2 (en) * 2022-03-23 2025-09-30 Semes Co., Ltd. Liquid supplying unit and liquid supplying method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162831A (ja) * 1997-11-21 1999-06-18 Nikon Corp 投影露光装置及び投影露光方法
WO2004093130A2 (en) * 2003-04-11 2004-10-28 Nikon Corporation Cleanup method for optics in immersion lithography
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
JP2006147639A (ja) * 2004-11-16 2006-06-08 Canon Inc 露光装置
WO2006062065A1 (ja) * 2004-12-06 2006-06-15 Nikon Corporation メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
JP2007123882A (ja) * 2005-10-24 2007-05-17 Taiwan Semiconductor Manufacturing Co Ltd 液浸リソグラフィ装置及び方法

Family Cites Families (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
SG88823A1 (en) * 1996-11-28 2002-05-21 Nikon Corp Projection exposure apparatus
USRE40043E1 (en) * 1997-03-10 2008-02-05 Asml Netherlands B.V. Positioning device having two object holders
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JPH1116816A (ja) * 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
WO1999027568A1 (en) * 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
EP1063742A4 (en) * 1998-03-11 2005-04-20 Nikon Corp ULTRAVIOLET LASER DEVICE AND EXPOSURE APPARATUS COMPRISING SUCH A ULTRAVIOLET LASER DEVICE
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
KR100604120B1 (ko) 1998-05-19 2006-07-24 가부시키가이샤 니콘 수차측정장치와 측정방법 및 이 장치를 구비한투영노광장치와 이 방법을 이용한 디바이스 제조방법,노광방법
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
KR100815222B1 (ko) * 2001-02-27 2008-03-19 에이에스엠엘 유에스, 인크. 리소그래피 장치 및 적어도 하나의 레티클 상에 형성된 적어도 두 개의 패턴으로부터의 이미지로 기판 스테이지 상의 필드를 노출시키는 방법
CN1286146C (zh) * 2001-03-09 2006-11-22 株式会社东芝 电子装置的制造系统
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
EP1532489A2 (en) * 2002-08-23 2005-05-25 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
EP1429188B1 (en) 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
CN101713932B (zh) 2002-11-12 2012-09-26 Asml荷兰有限公司 光刻装置和器件制造方法
EP2495613B1 (en) 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
CN101382738B (zh) * 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004053953A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
WO2004055803A1 (en) 2002-12-13 2004-07-01 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
DE60307322T2 (de) 2002-12-19 2007-10-18 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
KR101875296B1 (ko) 2003-02-26 2018-07-05 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101861493B1 (ko) * 2003-04-11 2018-05-28 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
TWI612556B (zh) * 2003-05-23 2018-01-21 尼康股份有限公司 曝光裝置、曝光方法及元件製造方法
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP2466382B1 (en) * 2003-07-08 2014-11-26 Nikon Corporation Wafer table for immersion lithography
WO2005029559A1 (ja) * 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
WO2005031820A1 (ja) 2003-09-26 2005-04-07 Nikon Corporation 投影露光装置及び投影露光装置の洗浄方法、メンテナンス方法並びにデバイスの製造方法
SG148993A1 (en) 2003-12-03 2009-01-29 Nikon Corp Exposure apparatus, exposure method, method for producing device, and optical part
WO2005059617A2 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101741343B1 (ko) 2004-02-04 2017-05-29 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2005286068A (ja) * 2004-03-29 2005-10-13 Canon Inc 露光装置及び方法
EP3098835B1 (en) 2004-06-21 2017-07-26 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
JP4677833B2 (ja) * 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
JP4656448B2 (ja) 2004-09-30 2011-03-23 株式会社ニコン 投影光学装置及び露光装置
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
JP2006313766A (ja) * 2005-05-06 2006-11-16 Nikon Corp 基板保持装置及びステージ装置並びに露光装置
JP5045008B2 (ja) * 2005-07-08 2012-10-10 株式会社ニコン 液浸露光用基板、露光方法及びデバイス製造方法
JP2007116073A (ja) * 2005-09-21 2007-05-10 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
WO2007034838A1 (ja) * 2005-09-21 2007-03-29 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
JP2007102580A (ja) * 2005-10-05 2007-04-19 Nikon Corp 位置決め手法、及び位置決め装置
JP5019170B2 (ja) * 2006-05-23 2012-09-05 株式会社ニコン メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US7841352B2 (en) * 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162831A (ja) * 1997-11-21 1999-06-18 Nikon Corp 投影露光装置及び投影露光方法
WO2004093130A2 (en) * 2003-04-11 2004-10-28 Nikon Corporation Cleanup method for optics in immersion lithography
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
JP2006147639A (ja) * 2004-11-16 2006-06-08 Canon Inc 露光装置
WO2006062065A1 (ja) * 2004-12-06 2006-06-15 Nikon Corporation メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
JP2007123882A (ja) * 2005-10-24 2007-05-17 Taiwan Semiconductor Manufacturing Co Ltd 液浸リソグラフィ装置及び方法

Also Published As

Publication number Publication date
JP2009033111A (ja) 2009-02-12
TW200903589A (en) 2009-01-16
KR20100031694A (ko) 2010-03-24
US8189168B2 (en) 2012-05-29
US20120204913A1 (en) 2012-08-16
US20090251672A1 (en) 2009-10-08

Similar Documents

Publication Publication Date Title
WO2008146819A1 (ja) 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
JP2009033111A5 (ja)
EP1753016A4 (en) EXPOSURE DEVICE AND COMPONENTS MANUFACTURING METHOD
TW200611082A (en) Exposure system and device production method
WO2011065589A3 (en) Substrate carrier device, substrate carrying method, substrate supporting member, substrate holding device, exposure apparatus, exposure method and device manufacturing method
TW200618321A (en) Methods and devices for fabricating and assembling printable semiconductor elements
EP1975719A3 (en) Method of forming resist pattern and semiconductor device manufactured with the same
TW200735180A (en) Manufacturing method of semiconductor device
TWI268735B (en) Method for manufacturing display device and display device
DE602009000259D1 (de) Verfahren zur Herstellung einer Funktionsschicht
TW200834248A (en) Liquid-immersion exposure method and liquid-immersion exposure apparatus
EP2022626A3 (en) Method of joining and method of fabricating an organic light emitting diode display device using the same
TW200736852A (en) Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same
TW200619866A (en) Aligner, exposing method, and device manufacturing method
TW200707131A (en) Photoresist stripper composition and methods for forming wire structures and for fabricating thin film transistor substrate using composition
TW200625445A (en) Substrate processing method
TW200628952A (en) Method for manufacturing array board for display device
EP1830394A4 (en) EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
WO2009017111A1 (ja) 露光装置の調整方法、露光装置、及びデバイス製造方法
EP1768194A3 (en) Method of manufacturing nitride semiconductor device
TW200604516A (en) Image inspecting device
TW200705117A (en) Measuring apparatus, exposure apparatus, and device manufacturing method
DE10345253A1 (de) Zustandssensor für Flüssigkeiten
WO2009091642A3 (en) Electrostatic surface cleaning
WO2009067984A3 (de) Verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08776909

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20097027052

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 08776909

Country of ref document: EP

Kind code of ref document: A1