[go: up one dir, main page]

WO2008143302A1 - レジスト下層膜形成用組成物 - Google Patents

レジスト下層膜形成用組成物 Download PDF

Info

Publication number
WO2008143302A1
WO2008143302A1 PCT/JP2008/059387 JP2008059387W WO2008143302A1 WO 2008143302 A1 WO2008143302 A1 WO 2008143302A1 JP 2008059387 W JP2008059387 W JP 2008059387W WO 2008143302 A1 WO2008143302 A1 WO 2008143302A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
lower layer
layer film
resist lower
forming resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/059387
Other languages
English (en)
French (fr)
Inventor
Nakaatsu Yoshimura
Yousuke Konno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Priority to JP2009515266A priority Critical patent/JP5177137B2/ja
Priority to KR1020097024641A priority patent/KR101426980B1/ko
Priority to US12/599,694 priority patent/US8334338B2/en
Publication of WO2008143302A1 publication Critical patent/WO2008143302A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H10P50/73—
    • H10W20/085—

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

　（Ａ）樹脂、（Ｂ）ブチルエーテル基を有する架橋剤及び（Ｃ）溶剤を含有するレジスト下層膜形成用組成物。
PCT/JP2008/059387 2007-05-23 2008-05-21 レジスト下層膜形成用組成物 Ceased WO2008143302A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009515266A JP5177137B2 (ja) 2007-05-23 2008-05-21 レジスト下層膜形成用組成物
KR1020097024641A KR101426980B1 (ko) 2007-05-23 2008-05-21 레지스트 하층막 형성용 조성물
US12/599,694 US8334338B2 (en) 2007-05-23 2008-05-21 Composition for forming resist lower layer film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007137012 2007-05-23
JP2007-137012 2007-05-23

Publications (1)

Publication Number Publication Date
WO2008143302A1 true WO2008143302A1 (ja) 2008-11-27

Family

ID=40031996

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059387 Ceased WO2008143302A1 (ja) 2007-05-23 2008-05-21 レジスト下層膜形成用組成物

Country Status (5)

Country Link
US (1) US8334338B2 (ja)
JP (1) JP5177137B2 (ja)
KR (1) KR101426980B1 (ja)
TW (2) TWI575013B (ja)
WO (1) WO2008143302A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190004259A (ko) 2016-04-28 2019-01-11 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
US10809619B2 (en) 2013-06-26 2020-10-20 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing substituted crosslinkable compound

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5443408B2 (ja) * 2011-02-23 2014-03-19 株式会社東芝 半導体装置の製造方法
US8513133B2 (en) * 2011-03-31 2013-08-20 Jsr Corporation Composition for forming resist underlayer film and method for forming pattern
KR101956925B1 (ko) * 2011-09-30 2019-03-11 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법, 및 패턴 형성 방법
KR101922280B1 (ko) * 2011-10-12 2018-11-26 제이에스알 가부시끼가이샤 패턴 형성 방법 및 레지스트 하층막 형성용 조성물
KR101993480B1 (ko) * 2011-12-16 2019-06-26 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 수지 조성물, 레지스트 하층막, 그의 형성 방법 및 패턴 형성 방법
CN104080788B (zh) * 2012-02-01 2016-06-22 株式会社Lg化学 新的化合物、感光组合物和含有所述感光组合物的感光剂
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
GB201313054D0 (en) * 2013-07-22 2013-09-04 Bergen Teknologioverforing As Method of forming a desired pattern on a substrate
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
KR102038942B1 (ko) * 2015-06-24 2019-10-31 후지필름 가부시키가이샤 패턴 형성 방법, 적층체, 및 유기 용제 현상용 레지스트 조성물
JP6712188B2 (ja) * 2015-07-13 2020-06-17 信越化学工業株式会社 レジスト下層膜形成用組成物及びこれを用いたパターン形成方法
JP6525376B2 (ja) 2015-08-31 2019-06-05 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ オーバーコートされたフォトレジストと共に使用するためのコーティング組成物

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002047430A (ja) * 2000-04-24 2002-02-12 Shipley Co Llc アパーチャ充填用組成物
WO2006132088A1 (ja) * 2005-06-10 2006-12-14 Nissan Chemical Industries, Ltd. ナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物
JP2006341590A (ja) * 2005-03-20 2006-12-21 Rohm & Haas Electronic Materials Llc オーバーコートされるフォトレジストと共に使用するためのコーティング組成物
JP2007241259A (ja) * 2006-02-13 2007-09-20 Hoya Corp マスクブランク用レジスト下層膜形成組成物、マスクブランク及びマスク

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6057239A (en) 1997-12-17 2000-05-02 Advanced Micro Devices, Inc. Dual damascene process using sacrificial spin-on materials
JP3928278B2 (ja) 1998-11-16 2007-06-13 Ｊｓｒ株式会社 反射防止膜形成組成物
US6316165B1 (en) 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
JP4288776B2 (ja) 1999-08-03 2009-07-01 Ｊｓｒ株式会社 反射防止膜形成組成物
JP4019247B2 (ja) * 2000-06-02 2007-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4654544B2 (ja) 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
JP2002329781A (ja) 2001-04-27 2002-11-15 Tokyo Ohka Kogyo Co Ltd 微細ホールの埋込方法
TWI317365B (en) * 2002-07-31 2009-11-21 Jsr Corp Acenaphthylene derivative, polymer, and antireflection film-forming composition
JP4292910B2 (ja) 2002-07-31 2009-07-08 Ｊｓｒ株式会社 アセナフチレン誘導体、重合体および反射防止膜形成組成物
TW200424767A (en) * 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
JP4575220B2 (ja) * 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
WO2007023710A1 (ja) * 2005-08-25 2007-03-01 Nissan Chemical Industries, Ltd. ビニルナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物
US7736822B2 (en) 2006-02-13 2010-06-15 Hoya Corporation Resist underlayer coating forming composition for mask blank, mask blank and mask

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002047430A (ja) * 2000-04-24 2002-02-12 Shipley Co Llc アパーチャ充填用組成物
JP2006341590A (ja) * 2005-03-20 2006-12-21 Rohm & Haas Electronic Materials Llc オーバーコートされるフォトレジストと共に使用するためのコーティング組成物
WO2006132088A1 (ja) * 2005-06-10 2006-12-14 Nissan Chemical Industries, Ltd. ナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物
JP2007241259A (ja) * 2006-02-13 2007-09-20 Hoya Corp マスクブランク用レジスト下層膜形成組成物、マスクブランク及びマスク

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10809619B2 (en) 2013-06-26 2020-10-20 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing substituted crosslinkable compound
US12405533B2 (en) 2013-06-26 2025-09-02 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition containing substituted crosslinkable compound
KR20190004259A (ko) 2016-04-28 2019-01-11 닛산 가가쿠 가부시키가이샤 레지스트 하층막 형성 조성물
US10684546B2 (en) 2016-04-28 2020-06-16 Nissan Chemical Corporation Composition for forming resist underlayer film

Also Published As

Publication number Publication date
TW201518379A (zh) 2015-05-16
TWI575013B (zh) 2017-03-21
JP5177137B2 (ja) 2013-04-03
US8334338B2 (en) 2012-12-18
US20110251323A1 (en) 2011-10-13
KR101426980B1 (ko) 2014-08-06
TW200903176A (en) 2009-01-16
TWI494700B (zh) 2015-08-01
JPWO2008143302A1 (ja) 2010-08-12
KR20100017384A (ko) 2010-02-16

Similar Documents

Publication Publication Date Title
WO2008143302A1 (ja) レジスト下層膜形成用組成物
EP2062950A3 (en) Topcoat composition, alkali developer-soluble topcoat film using the composition and pattern forming method using the same
TWI346253B (en) Antireflection film composition, patterning process and substrate using the same
WO2008126766A1 (ja) 波長変換フィルム、農業用フィルム、構造物および塗膜形成用組成物
ATE515529T1 (de) Folie aus verstärktem silikonharz und nanofasergefüllte silikonzusammensetzung
TW200730583A (en) Siloxane resin composition and the method for manufacturing the same
WO2009028833A3 (en) Photochromic films and method for manufacturing the same
TWI372767B (en) Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer
PL2099876T3 (pl) Kompozycje powłokowe charakteryzujące się bardzo wysoką siłą przyczepności do błon z polimerów cykloolefin oraz błony z polimerów cykloolefin zawierające warstwę powłokową wytworzoną przy ich użyciu
WO2009083690A3 (fr) Feuille de securite comportant un support coextrude
WO2008153154A1 (ja) 環状化合物、フォトレジスト基材及びフォトレジスト組成物
WO2008103776A3 (en) Thermally cured underlayer for lithographic application
WO2008108390A1 (ja) 光硬化性組成物およびこれを用いた硬化物
WO2008143253A1 (ja) 接着剤組成物及びこれを用いた接着フィルム
WO2008137262A3 (en) Reinforced silicone resin film
EP2366751A3 (en) Photosensitive adhesive composition, and film adhesive, adhesive sheet, adhesive pattern, semiconductor wafer with adhesive layer and semiconductor device using the photosensitive adhesive composition
WO2008104371A3 (en) Laminated multilayer films
WO2008118567A3 (en) Polythioether amine resins and compositions comprising same
WO2009035087A1 (ja) ケイ素含有微細パターン形成用組成物およびそれを用いた微細パターン形成方法
WO2009072431A1 (ja) ラミネート用接着剤
BRPI0811331A2 (pt) "filme multicamada, artigo, camada de filme einterpolímero de etileno/olefina"
WO2007044181A3 (en) Coated substrates and methods for their preparation
WO2013012252A3 (ko) 우수한 내지문성을 갖는 눈부심 방지 코팅 조성물, 이를 이용하여 제조된 눈부심 방지 필름
WO2009085390A3 (en) Tapes comprising barrier coating compositions and components comprising the same
WO2007097835A3 (en) Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08753064

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009515266

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12599694

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20097024641

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 08753064

Country of ref document: EP

Kind code of ref document: A1