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WO2008035556A1 - Écran électroluminescent organique et procédé de fabrication de celui-ci - Google Patents

Écran électroluminescent organique et procédé de fabrication de celui-ci Download PDF

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Publication number
WO2008035556A1
WO2008035556A1 PCT/JP2007/066921 JP2007066921W WO2008035556A1 WO 2008035556 A1 WO2008035556 A1 WO 2008035556A1 JP 2007066921 W JP2007066921 W JP 2007066921W WO 2008035556 A1 WO2008035556 A1 WO 2008035556A1
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Prior art keywords
organic
layer
display device
electrode
planarization layer
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English (en)
Japanese (ja)
Inventor
Haruyuki Morita
Kenji Nakanishi
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present invention relates to an organic electoluminescence display device and a method for manufacturing the same.
  • an electoluminescence display device (hereinafter also referred to as an EL display device) has been widely known.
  • EL display device There are inorganic EL display devices and organic EL display devices as EL display devices.
  • organic EL display devices are particularly actively researched and developed because they have the characteristics of low-voltage drive, all-solid-state type, high-speed response, and self-luminance.
  • a general organic EL display device is provided between, for example, a substrate, a pixel electrode formed on the substrate, a counter electrode disposed to face the pixel electrode, and the pixel electrode and the counter electrode. And an organic layer formed.
  • the active matrix substrate is provided with TFTs and wirings, a large number of irregularities are formed on the surface of the active matrix substrate.
  • a pixel electrode is directly formed on a substrate having such irregularities, a large number of irregularities are formed on the pixel electrode corresponding to the irregularities, and the pixel electrode is easily lost.
  • Patent Document 1 In general, in order to reduce such unevenness, for example, as shown in Patent Document 1, it is known to form a planarization layer.
  • the active matrix substrate of Patent Document 1 has a laminated structure in which an upper region including a plurality of pixel electrodes arranged in a matrix and a lower region including a plurality of thin film transistors that drive the individual pixel electrodes are overlapped with each other. A planarizing layer is interposed between these regions. This flattening layer improves the flatness of the region where the pixel electrode is formed.
  • Patent Document 1 Japanese Patent Laid-Open No. 6-242433
  • the cause of the above problem is unevenness slightly formed on the surface of the first electrode. That is, slight irregularities are likely to remain on the surface of the planarization layer formed on the active matrix substrate of Patent Document 1, reflecting the irregularities before the planarization layer is formed. Then, slight irregularities are also formed on the surface of the first electrode reflecting the irregularities on the surface of the planarizing layer.
  • the thickness of the organic layer is smaller than the thickness of the liquid crystal layer, even if the unevenness of the first electrode is slight, it is greatly affected.
  • the thickness of the organic layer tends to be nonuniform due to slight unevenness of the first electrode.
  • pixel defects may occur as a result of the organic layer being cut off and missing.
  • An object of the present invention is to improve display quality by reducing pixel defects by improving the flatness of the surface of the first electrode.
  • the first electrode is formed so that the thickness of the first electrode is equal to or greater than the maximum depth of the irregularities formed on the surface of the planarization layer. did.
  • the organic electoluminescence display device includes a substrate body, a plurality of switching elements formed on the substrate body, and a planarization layer formed so as to cover the switching elements. And a plurality of first electrodes formed in the planarization layer at predetermined intervals and electrically connected to the switching element through contact holes formed in the planarization layer. And a second electrode disposed opposite to the first electrode, and an organic layer provided between the first electrode and the second electrode and having a light emitting function, the thickness of the first electrode Is larger than the maximum depth of the irregularities formed on the surface of the planarizing layer. [0012] Furthermore, it is preferable that the maximum depth of the unevenness formed on the surface of the planarization layer is lOOnm or less.
  • the organic layer preferably contains an organic polymer material.
  • the light emission of the organic layer is preferably extracted from the second electrode side.
  • the planarization layer includes a first planarization layer that covers the switching element and has a maximum depth of surface irregularities of 50 mm or more and 200 mm or less, and the first planarization layer. And at least one second planarization layer formed thereon.
  • the maximum depth of the irregularities on the surface of the planarization layer located immediately below the first electrode is 100 mm or less! /.
  • the organic layer preferably contains an organic polymer material.
  • the light emission of the organic layer is preferably extracted from the second electrode side.
  • a planarization layer that covers the switching element is formed on the substrate body on which a plurality of switching elements are formed, and the planarization layer is formed.
  • the first electrode is formed so that the thickness of the first electrode is not less than the maximum depth of the unevenness formed on the surface of the planarizing layer.
  • planarization layer forming step it is preferable to form the planarization layer so that the maximum depth of the irregularities of the planarization layer is 100 ⁇ m or less.
  • planarization layer forming step it is preferable to perform a polishing process on the surface of the planarization layer.
  • the organic layer forming step it is preferable to form the organic layer containing an organic polymer material.
  • the organic layer is preferably formed by an ink jet method.
  • the organic-electric-mouth luminescence display device is a top emission type in which light emission of the organic layer is extracted from the second electrode side! /
  • the flattening layer forming step includes a first flattening layer forming step of forming a flattening layer so as to cover the switching element, and flattening unevenness formed on the surface of the flattening layer. It is preferable to include a flattening process step for performing a flattening process and a second flattening layer forming step for forming at least one flattening layer on the flattened layer obtained by flattening the unevenness.
  • the maximum depth of the unevenness is 50 mm or more and 200 mm or less.
  • the flattening treatment step it is preferable to flatten the unevenness by a polishing treatment.
  • polishing process is preferably a CMP (Chemical Mechanical Polishing) process.
  • the maximum depth of the unevenness formed on the surface of the planarization layer located immediately below the first electrode is 100 mm or less.
  • the organic layer forming step it is preferable to form the organic layer containing an organic polymer material.
  • the organic layer is preferably formed by an ink jet method.
  • the organic electoluminescence display device is of a top emission type in which light emission of the organic layer is extracted from the second electrode side! /
  • the thickness of the first electrode is not less than the maximum depth of the unevenness formed on the surface of the planarization layer, so that the flatness of the surface of the first electrode is improved. Therefore, since the uniformity of the organic layer thickness is improved, pixel defects are reduced.
  • the maximum depth of the irregularities formed in the planarization layer is larger than lOOnm, the flatness of the first electrode is degraded, and the thickness of the organic layer tends to be nonuniform. Therefore, the uniformity of the luminance distribution tends to be reduced.
  • the maximum depth of the unevenness formed on the surface of the planarization layer is lOOnm or less, the influence of the unevenness on the surface of the planarization layer is reduced, and the surface of the first electrode is flattened. Sex is improved. This further improves the uniformity of the thickness of the organic layer, thereby improving the uniformity of the luminance distribution.
  • the aperture ratio is larger than that of the bottom emission type organic EL display device.
  • a planarization layer that covers the switching elements is formed on the substrate body on which the plurality of switching elements are formed.
  • a plurality of contact holes are formed in the planarization layer.
  • a plurality of first electrodes are formed on the planarization layer at a predetermined interval.
  • the flatness of the surface of the first electrode is improved by forming the thickness of the first electrode so as to be not less than the maximum depth of the unevenness formed on the surface of the planarizing layer. Therefore, pixel defects are reduced.
  • the organic layer forming step the organic layer is formed so as to cover at least a part of the first electrode.
  • the organic layer is formed by a wet process. This makes it possible to form an organic layer that is not subjected to a vacuum process.
  • the second electrode is formed so as to cover the organic layer.
  • the unevenness change with respect to the polishing time in the chemical mechanical polishing (CMP method) of the planarization layer tends to increase the polishing time as the maximum depth of the unevenness decreases.
  • the unevenness is less than lOOnm
  • the unevenness change becomes extremely small.
  • the step reduction speed decreases as the unevenness becomes smaller, and it takes a considerable amount of time to give the organic EL appropriate flatness.
  • the formation of the staggered layer leads to a complicated pattern and process, and decreases productivity and yield.
  • flattening by polishing with a staggered layer may cause unintentional irregularities due to overpolishing due to the difference in polishing speed between the location where the stubber layer is located or not! Become.
  • the planarization layer forming step includes a first planarization layer forming step of forming a planarization layer so as to cover the switching element, and a surface of the planarization layer.
  • the second planarization located on the lower surface of the first electrode is formed by forming at least one second planarization layer above the first planarization layer on which the unevenness is planarized by the planarization process described above. It becomes possible to make the layer surface substantially flat.
  • the formation of the second planarization layer is effective not only in planarization but also in mitigating the influence of scratches on the surface of the first planarization layer by the polishing process.
  • the maximum depth of the unevenness is set to 50 mm or more and 200 mm or less.
  • the polishing process is performed until the maximum depth of the unevenness of the first planarization layer becomes smaller than 50 nm, excessive polishing time and generation of scratches on the surface are caused, resulting in productivity. And the yield decreases.
  • the thickness of the second planarization layer is increased to obtain planarity after the formation of the second planarization layer. It needs to be very thick.
  • the maximum depth of the unevenness generated in the first planarization layer of the present invention is set to 50 nm or more and 200 nm or less, the unevenness reduction speed that decreases as the maximum depth of the unevenness decreases. It is possible to perform a flattening process with excellent time controllability and flattening efficiency with a large step reduction speed without being affected by the above. For this reason, it is possible to easily obtain the flatness suitable for the organic EL by forming the second planarizing layer.
  • the polishing process is a CMP (Chemical Mechanical Polishing) process.
  • CMP is a method of flattening the film surface by chemical etching with a chemical solution and mechanical polishing with fine abrasive grains. According to CMP, it has excellent flatness on the order of nm, and the polishing amount can be controlled with high V and accuracy.
  • the maximum depth of the unevenness formed on the surface of the planarization layer located immediately below the first electrode is set to 100 mm or less. This can reduce the luminance distribution due to the unevenness on the planarization layer and improve the film thickness distribution of the organic layer on the pixel electrode. This makes it possible to manufacture high-quality organic EL display devices with few display defects at a high yield.
  • the organic layer containing an organic polymer material is formed.
  • Film formation of a polymer material using a liquid material can be obtained by baking after applying the material.
  • the film thickness distribution is significantly affected by the unevenness of the base. Therefore, it is possible to improve the film thickness distribution of the organic layer by making the surface of the second planarizing layer, which is the lower surface of the first electrode, substantially flat. Therefore, excellent display quality and reliability can be obtained in an organic EL display device in which a polymer material is included in the organic layer in the organic EL portion.
  • the flatness of the surface of the first electrode can be improved because the thickness of the first electrode is not less than the maximum depth of the unevenness of the planarization layer. For this reason, the uniformity of the thickness of the organic layer is improved. As a result, it is possible to reduce the pixel defects and improve the display quality with the power S.
  • FIG. 1 is an enlarged front view of the organic EL display device of Embodiment 1 with the sealing film omitted. is there.
  • FIG. 2 is a diagram schematically showing a section of the II-II portion of the organic EL display device of FIG.
  • FIG. 3 is a view schematically showing a cross section of the organic EL display device of Embodiment 2. 4] Fig. 4 is an enlarged cross-sectional view of the sample device used for confirming the influence of the luminance of the maximum depth of the unevenness of the flattening layer on the organic EL display device.
  • FIG. 5 is a graph showing the ratio of the luminance of the concave region and the convex region to the maximum depth of the concave and convex portions of the planarization layer obtained by the second example.
  • FIG. 6 is a diagram showing the maximum depth of unevenness with respect to the polishing time in the CMP method of the planarizing layer.
  • FIG. 7 is a cross-sectional view of an organic EL display device 100 according to Embodiment 3.
  • FIG. 8 is a cross-sectional view of the organic EL display device 100 after the formation of an interlayer insulating film 110 according to the third embodiment.
  • FIG. 9 is a cross-sectional view of the organic EL display device 100 after the formation of the first planarization layer 108a according to Embodiment 3.
  • FIG. 10 is a cross-sectional view of the organic EL display device 100 during the CMP polishing process according to the third embodiment.
  • FIG. 11 is a cross-sectional view of the organic EL display device 100 in which the shape of the first planarization layer 108a before the CMP polishing process according to the third embodiment is indicated by a dotted line 120.
  • FIG. 12 is a cross-sectional view of the organic EL display device 100 after the formation of the second planarization layer 108b according to the third embodiment.
  • FIG. 13 is a cross-sectional view of organic EL display device 100 after formation of first electrode 11 la according to Embodiment 3.
  • FIG. 1 is an enlarged front view of the organic EL display device 1 of the present embodiment with the sealing film 60 omitted.
  • FIG. 2 is a diagram schematically showing a cross section of the II-II portion of the organic EL display device 1 of FIG. Further, a direction L1 in FIGS. 1 and 2 indicates a light emission direction to the outside of the organic EL display device 1.
  • FIG. 1 is an enlarged front view of the organic EL display device 1 of the present embodiment with the sealing film 60 omitted.
  • FIG. 2 is a diagram schematically showing a cross section of the II-II portion of the organic EL display device 1 of FIG. Further, a direction L1 in FIGS. 1 and 2 indicates a light emission direction to the outside of the organic EL display device 1.
  • FIG. 1 is an enlarged front view of the organic EL display device 1 of the present embodiment with the sealing film 60 omitted.
  • FIG. 2 is a diagram schematically showing a cross section of the II-II portion of the organic EL display device
  • the organic EL display device 1 includes an active matrix substrate 10.
  • the active matrix substrate 10 includes a substrate body 11, a plurality of TFTs 12 and wirings 13 that are switching elements, a planarization layer 14, and a plurality of first electrodes 20.
  • the substrate body 11 is, for example, a semiconductor substrate made of a glass substrate, a plastic substrate, a silicon wafer, or the like.
  • a plurality of TFTs 12, wirings 13 and the like are formed on one surface of the substrate body 11, and a planarization layer 14 is formed so as to cover the TFTs 12 and the wirings 13.
  • Each TFT 12 has, for example, a so-called top gate type structure.
  • the top gate type TFT 12 has a source region 15, a drain region 16, and a gate electrode 17.
  • the source region 15 and the drain region 16 are disposed closer to the substrate body 11 than the gate electrode 17.
  • the source region 15 and the drain region 16 are formed in separate regions on the substrate body 11. Each is formed at a predetermined interval.
  • a semiconductor layer made of polycrystalline Si, alpha-moss Si, poly-Si, Te, etc. 18 is formed in the side region between the source region 15 and the drain region 16 and the side region where the source region 15 and the drain region 16 face each other.
  • a gate insulating film 19 is formed on the source region 15, the drain region 16 and the semiconductor layer 18 so as to cover the source region 15, the drain region 16 and the semiconductor layer 18.
  • a gate electrode 17 is formed on the gate insulating film 19, and the gate electrode 17 and the source region 15 and the drain region 16 are insulated from each other through the gate insulating film 19.
  • the material of the gate electrode 17 and the like constituting the TFT 12 is not limited to any known material.
  • the maximum depth D of the irregularities is, for example, 48 nm. That is, the maximum depth D of the unevenness on the surface of the planarizing layer 14 is lOOnm or less. The maximum depth D of the unevenness on the surface of the planarizing layer 14 is preferably 50 nm or less.
  • the planarization layer 14 includes, for example, a silicon nitride film 14a and an acrylic resin layer 14b formed on the silicon nitride film 14a.
  • the silicon nitride film 14a functions as a protective film such as TFT12.
  • the acrylic resin layer 14b is formed to a thickness of 2111, for example.
  • the thickness of the planarizing layer 14 is preferably 2 m or more.
  • a source wiring connected to the source region 15 is formed between the silicon nitride film 14a and the acrylic resin layer 14b.
  • a contact hole 14c is formed on the drain region 16 of each TFT 12 so as to penetrate the silicon nitride film 14a, the acrylic resin layer 14b, and the gate insulating film 19.
  • a plurality of first electrodes 20 are formed in a matrix at predetermined intervals on the surface of the planarizing layer 14, and each constitutes each pixel region 35 of the organic EL display device 1.
  • the first electrode 20 is made of a metal material having a large work function, such as Au, Ni, Pt, etc., and each first electrode 20 is connected to the contact hole 14c.
  • the contact hole 14c is filled with the same metal material as that of the first electrode 20.
  • the first electrode 20 is electrically connected to the drain region 16 through a contact hole 14c formed in the planarizing layer 14, and has a function of injecting holes into the organic layer 30 in accordance with a signal input from the TFT 12. Have Yes.
  • the thickness H of the first electrode 20 is, for example, 150 nm, and is greater than the maximum depth D of the unevenness formed on the surface of the planarization layer 14.
  • the organic EL display device 1 includes an insulating layer 40 formed around each first electrode 20, a second electrode 50 disposed opposite to the plurality of first electrodes 20, and a first electrode 20, An organic layer 30 provided between the second electrode 50 and a sealing film 60 formed on the organic layer 30 and the second electrode 50.
  • the insulating layer 40 partitions the plurality of first electrodes 20 in a matrix and is formed so as to overlap the entire contact hole 14c. That is, the adjacent first electrodes 20 are electrically insulated from each other through the insulating layer 40. Since the insulating layer 40 is formed on the contact hole 14c, the contact hole 14c is not included in the pixel region 35.
  • the insulating layer 40 is made of, for example, photosensitive polyimide, acrylic resin, methallyl resin, or nopolac resin.
  • the organic layer 30 is formed on each first electrode 20 partitioned in a matrix, and is partitioned by the insulating layer 40 in the same manner as the first electrode 20.
  • the organic layer 30 includes a hole transport layer 31 and a light emitting layer 32.
  • the hole transport layer 31 is formed on the first electrode 20 side, and the light emitting layer 32 is formed on the second electrode 50 side.
  • the hole transport layer 31 has a function of transporting the holes injected into the hole transport layer 31 from the first electrode 20 force to the light emitting layer 32.
  • the hole transport layer 31 is made of, for example, polyaniline, 3, 4 polyethylene dioxythiophene / polystyrene sulfonate (PEDT / PSS), poly (triphenylamine derivative), polybulur rubazole (PVCz), etc. It is made of an organic polymer material that is a hole transport material.
  • the light emitting layer 32 receives holes injected into the light emitting layer 32 from the first electrode 20 through the hole transport layer 31 and electrons injected from the second electrode 50, and recombines them. It has a function to emit light.
  • the light emitting layer 32 is formed including, for example, an organic polymer material that is one or more kinds of light emitting materials.
  • organic polymer materials used in the light emitting layer 32 include poly (2 deloxy-1,4 phenylene) (DO-PPP), poly [2,5 bis [2— (N, N, N— Triethylammonium) ethoxy] -1,4 Hue 2-rualto 1,4-Fuenyllene] dibromide (PPP— NEt 3+ ), poly [2— (2, — Tilhexyloxy) 5-methoxy-1,4 phenylenevinylene] (MEH-PPV), etc.
  • the light emitting layer 32 may include a leveling agent, a light emission assisting agent, an additive, a charge transporting agent, a light emitting dopant, and the like.
  • the additive include a donor and an acceptor.
  • the second electrode 50 is formed so as to cover the insulating layer 40 and the organic layer 30, for example.
  • the second electrode 50 has a function of injecting electrons into the organic layer 30 and includes a metal layer 51 and a transparent electrode layer 52 formed on the metal layer 51.
  • the second electrode 50 has a metal layer 51 made of a metal material having a low work function, for example, A1 containing 5% of Ca or the like on the organic layer 30 and the insulating layer 40 side.
  • the metal layer 51 is made of, for example, a transparent material made of ITO, IZO, ZnO, SnO or the like.
  • a conductive oxide such as the bright electrode layer 52.
  • the sealing film 60 is formed so as to cover the second electrode 50 in order to protect the organic layer 30 and the second electrode 50 from moisture in the atmosphere.
  • the sealing film 60 is formed of, for example, glass or plastic.
  • the manufacturing method of the organic EL display device 1 includes a planarization layer forming step, a first electrode forming step, an organic layer forming step, and a second electrode forming step.
  • the substrate body 11 used in this manufacturing method is provided with a top gate TFT 12 and wirings 13 in advance by a general manufacturing method.
  • the planarization layer 14 covering the TFT 12 is formed on the substrate body 11 on which the plurality of TFTs 12, the wirings 13 and the like are formed, and the plurality of contact holes 14c are formed in the planarization layer 14. To do.
  • a silicon nitride film 14a that functions as a protective film such as TFT 12 is formed on the surface of the substrate body 11 by, for example, a plasma CVD method or the like.
  • contact holes (not shown) penetrating the silicon nitride film 14a and the gate insulating film 19 are formed on the source region 15 and the drain region 16 of each TFT 12 by etching or the like.
  • source region A source wiring (not shown) connected to the region 15 is patterned.
  • the acrylic resin layer 14b is laminated on the silicon nitride film 14a by spin coating or the like.
  • the acrylic resin layer 14b is formed to have a thickness of 4 m, for example.
  • a contact hole 14c penetrating through the silicon nitride film 14a and the acrylic resin layer 14b is formed at the same position as the contact hole previously formed on the drain region 16 by etching or the like.
  • the planarizing layer 14 is formed of a known material used for the planarizing layer 14 which may be formed of acrylic resin, epoxy resin, polyimide resin, SOG (Spin on Glass), or the like. Can do.
  • the surface of the planarization layer 14 is polished by CMP (Chemical Mechanical Polishing) or the like, and the thickness of the planarization layer 14 is reduced to, for example, 2 inches, and the surface of the planarization layer 14
  • the maximum depth D of the irregularities formed on the substrate is set to a size of 48 nm, for example.
  • the planarization layer 14 is formed so that the maximum depth D of the unevenness on the surface of the planarization layer 14 is lOOnm or less.
  • the planarizing layer 14 is preferably formed so that the maximum depth D of the unevenness on the surface of the planarizing layer 14 is 50 ⁇ m or less.
  • the thickness of the planarizing layer 14 is preferably 2 ⁇ m or more! / ,.
  • a plurality of first electrodes 20 are formed at a predetermined interval and electrically connected to the TFT 12 through the contact hole 14c.
  • a film of a metal material having a large work function such as Au, Ni, Pt or the like is formed by a known film formation method such as sputtering.
  • the contact hole 14c is also filled with the metal material.
  • a plurality of rectangular first electrodes 20 are formed by patterning a metal material film formed by using a photolithography method or the like in a matrix at predetermined intervals.
  • the first electrode 20 is formed so that the thickness H force of the first electrode 20 is, for example, 150 nm or the like, that is, the size of the maximum depth D of the unevenness on the surface of the planarizing layer 14.
  • the plurality of first electrodes 20 are partitioned in a matrix, and the insulating layer 40 that electrically insulates the adjacent first electrodes 20 from each other is formed.
  • the insulating layer 40 is patterned into a frame shape surrounding the periphery of each first electrode 20 and covering the edge of the first electrode 20 by, for example, a photolithography method or the like. At this time, the insulating layer 40 is formed so as to overlap the entire contact hole 14c.
  • the organic layer 30 composed of the hole transport layer 31 and the light emitting layer 32 is formed so as to cover the exposed portion of the first electrode 20.
  • a hole transport material paint in which an organic polymer material that is a hole transport material is dissolved or dispersed in a solvent is supplied so as to cover the exposed first electrode 20 by an inkjet method or the like. Thereafter, the hole transport layer 31 is formed by baking the substrate body 11.
  • an organic light emitting material coating material in which an organic polymer material as a light emitting material is dissolved or dispersed in a solvent is supplied so as to cover the hole transport layer 31 by an inkjet method or the like.
  • the substrate body 11 is subjected to a firing process to form the light emitting layer 32. For example, pure water or the like is used as the solvent.
  • the second electrode 50 including the metal layer 51 and the transparent electrode layer 52 is formed so as to cover the organic layer 30 and the insulating layer 40.
  • a metal layer 51 made of A containing 5% Ca is formed on the surfaces of the organic layer 30 and the insulating layer 40 by resistance heating vapor deposition or the like.
  • the sealing film 60 is formed on the second electrode 50 so as to cover the organic layer 30 and the second electrode 50 by a plasma CVD method or the like.
  • the force that the thickness H of the first electrode 20 is 150 nm and the maximum depth D of the unevenness of the planarization layer 14 is 48 nm.
  • the present invention is not limited to this.
  • Flattening layer 14 The flattening layer 14 is formed so that the maximum depth D of the surface irregularities is lOOnm or less, and the thickness of the first electrode 20 H force The maximum unevenness depth D of the flattening layer 14 or more
  • the first electrode 20 is formed so as to have a size of! /.
  • the thickness of the first electrode 20 is equal to or greater than the maximum depth D of the unevenness formed on the surface of the flattening layer 14, so that the flatness of the surface of the first electrode 20 is reduced. Since the thickness can be improved, the uniformity of the thickness of the organic layer 30 is improved. As a result, pixel defects can be reduced and display quality can be improved.
  • the planarity of the first electrode 20 is deteriorated and the thickness of the organic layer 30 is unsatisfactory. It tends to be uniform. Therefore, the uniformity of the luminance distribution tends to be reduced.
  • the maximum depth D of the flattening layer 14 is D force S, lOOnm or less, the influence of the unevenness of the surface of the flattening layer 14 is reduced, and the flatness of the surface of the first electrode is reduced. Power S can be improved.
  • the thickness uniformity of the organic layer 30 can be further improved. As a result, the uniformity of the luminance distribution can be improved and the display quality can be improved.
  • the organic EL display device 1 is a top emission method in which the light emitted from the organic layer 30 is extracted from the second electrode 50 side, the organic layer is not blocked by the TFT 12 or the wiring 13 that does not transmit light. 30 luminescence can be extracted. As a result, the aperture ratio can be made larger than the bottom emission type EL display device.
  • the first electrode 20 is formed so that the thickness H force of the first electrode 20 and the maximum depth D of the concave and convex on the surface of the planarizing layer 14 are not less than D. . For this reason, the flatness of the surface of the first electrode 20 can be improved. As a result, pixel defects can be reduced and display quality can be improved.
  • the planarization layer 14 is formed so that the maximum depth D of the planarization layer 14 is less than D force l OOnm. For this reason, it is possible to improve the flatness of the surface of the first electrode 20. As a result, the power S improves the uniformity of the luminance distribution and improves the display quality.
  • the surface of the planarization layer 14 is polished.
  • the maximum depth D of the unevenness of the planarizing layer 14 can be made less than lOOnm without increasing the thickness of the planarizing layer 14 relatively.
  • the planarization layer 14 can be formed relatively thin, the organic EL display device 1 can be thinned.
  • the organic layer forming step since the organic layer 30 containing the organic polymer material is formed by the inkjet method, it is possible to form the organic layer 30 without performing a vacuum process. As a result, productivity can be improved and manufacturing cost can be reduced with the power S.
  • FIG. 3 shows Embodiment 2 of the present invention.
  • the same parts as those in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
  • FIG. 3 is a diagram schematically showing a cross section of the organic EL display device 1 of the present embodiment.
  • the top gate type TFT 12 is formed on the substrate body 11, whereas the organic EL display device 1 of the present embodiment is as shown in FIG.
  • a bottom-gate TFT 12 is formed on the substrate body 11! /.
  • the bottom gate TFT 12 includes a source region 70 and a drain region 71, and a gate electrode 72.
  • the gate electrode 72 is disposed closer to the substrate body 11 than the source region 70 and the drain region 71. . That is, the gate electrode 72 is formed on the substrate body 11, and the gate insulating film 19 is formed so as to cover the gate electrode 72.
  • an island-shaped semiconductor layer 73 that is insulated from the gate electrode 72 through the gate insulating film 19 is formed so as to cover the gate electrode 72.
  • the drain region 71 and the source region 70 are formed in separate regions without contacting each other.
  • the gate electrode 72 is insulated from the source region 70 and the drain region 71 through the gate insulating film 19.
  • the material constituting the bottom gate type TFT 12 is not limited in any way, and a known material can be used similarly to the top gate type TFT 12 of the first embodiment.
  • the top gate type TFT 12 is not formed on the surface of the substrate body 11 before the planarization layer 14 is formed.
  • the TFT 12 is formed on the substrate body 11 to form irregularities having the same maximum depth as that of the case! For this reason, in this embodiment, the force S can be obtained to obtain the same effect as in the first embodiment.
  • FIG. 7 shows a cross-sectional view of an organic EL display device 100 according to Embodiment 3 of the present invention.
  • the organic EL display device 100 includes an active matrix substrate 101, an organic EL portion 102 formed on the active matrix substrate 101, an insulating film 103 formed on the organic EL portion 102, and a sealing substrate 104. ing.
  • the active matrix substrate 101 includes a substrate body 105, a plurality of TFTs 106 and wirings 107 that are switching elements, and a first planarization layer 108a and a second planarization layer 108b.
  • the TFT 106 formed on the active matrix substrate 101 may be a top gate type. In addition, a bottom gate type may be used.
  • the substrate body 105 is, for example, a semiconductor substrate made of a glass substrate, a plastic substrate, a silicon wafer, or the like.
  • a plurality of TFTs 106 each having a gate electrode 109a, a TFT electrode 109b, and the like, wirings 107, and the like are formed.
  • An interlayer insulating film 110, a first planarizing layer 108a, and a second planarizing layer 108b are formed so as to cover 106 and the wiring 107.
  • the interlayer insulating film 110 is formed of, for example, a silicon oxide film, a silicon nitride film, or the like.
  • the first planarization layer 108a is formed so as to cover the TFT 106 and have a maximum depth of unevenness on the surface of 50 mm or more and 200 mm or less.
  • the second planarization layer 108b is formed on the first planarization layer 108a so that the maximum depth of surface irregularities is 100 mm or less.
  • the second planarizing layer 108b may be formed of a single layer as in the present embodiment! / May not be formed, and may be formed of a plurality of layers.
  • the first flattening layer 108a and the second flattening layer 108b are, for example, resin layers such as acrylic, epoxy, polyimide, polyamide, and polyimideamide, SOG (Spin on Glass), and the like.
  • resin layers such as acrylic, epoxy, polyimide, polyamide, and polyimideamide, SOG (Spin on Glass), and the like.
  • a liquid glass material or the like is preferably used.
  • the organic EL portion 102 includes a plurality of first electrodes 11la (anode) provided separately from each other, an organic layer 112 provided on the first electrode 11la, and an edge portion of the first electrode 11la.
  • the insulating layer 113 is provided so as to cover the electrode, and the second electrode 11 lb (cathode) is provided so as to cover the insulating layer 113.
  • a plurality of first electrodes 11la are formed in a matrix at predetermined intervals on the surface of the second planarization layer 108b.
  • Each of the first electrodes 11 la is formed in a rectangular shape, and each of the first electrodes 11 la constitutes each pixel region of the organic EL display device 100.
  • Each first electrode 11 la is connected to a contact hole 114.
  • the contact hole 114 is filled with the same metal material as the first electrode 11 la.
  • the first electrode 111a is electrically connected to the TFT electrode 109b via the contact hole 114 formed in the first planarization layer 108a and the second planarization layer 108b, and the signal input from the TFT 106 Accordingly, the organic layer 112 has a function of injecting holes.
  • the thickness of the first electrode 111a is, for example, 150 nm, and is larger than the maximum depth of the unevenness formed on the surface of the second planarization layer 108b.
  • the insulating layer 113 partitions the plurality of first electrodes 111a in a matrix and is formed so as to overlap the entire contact hole 114. That is, the adjacent first electrodes 11 la are electrically insulated from each other through the insulating layer 113. Since the insulating layer 113 is formed on the contact hole 114! /, The contact hole 18 is not included in the pixel region! /.
  • the insulating layer 113 is made of, for example, photosensitive polyimide, acrylic resin, methallyl resin, or nopolac resin.
  • the organic layer 112 is formed on each first electrode 111a partitioned in a matrix, and is partitioned by the insulating layer 113 in the same manner as the first electrode 11 la.
  • the organic layer 112 includes a hole transport layer 112a, a light emitting layer 112b, and an electron injection layer 112c.
  • the hole transport layer 112a has a function of transporting holes injected from the first electrode 111a to the hole transport layer 112a to the light emitting layer 32.
  • the hole transport layer 112a is formed of, for example, an organic polymer material that is a hole transport material such as polyaniline.
  • the light-emitting layer 112b receives holes injected from the first electrode 111a through the hole transport layer 112a into the light-emitting layer 112b and electrons injected from the second electrode 11lb, and recombines them. By combining them, it has a function of emitting light.
  • the light emitting layer 112b is formed including, for example, an organic polymer material which is one kind or many kinds of light emitting materials.
  • the organic polymer material used for the light emitting layer 1 12b for example, poly (2-deoxy-1,4-phenylene) (DO-PPP) or the like is used.
  • the light emitting layer 112b may include a leveling agent, a light emission assisting agent, an additive, a charge transporting agent, a light emitting dopant, and the like.
  • Additives are a donor, an acceptor, etc., for example.
  • the second electrode 111b has a function of injecting electrons into the organic layer 112.
  • a material having a small work function (work function 4. OeV or less) made of a metal made of A and containing 5% of Ca or the like is preferable. This is because many organic materials have a lower electron affinity than metals and inorganic semiconductors, and thus an electrode with a low work function is required for electron injection.
  • the insulating film 103 is composed of a film containing silicon, oxygen, and nitrogen, for example, a silicon oxide film, a silicon nitride film, or the like.
  • the sealing substrate 104 has a second electrode 11 in order to protect the second electrode 11 lb from moisture in the atmosphere. It is formed to cover lb.
  • the sealing substrate 104 is made of, for example, glass or plastic.
  • FIGS. 8 to 13 are process diagrams illustrating a method of manufacturing the active matrix organic EL display device 100 including the thin film transistor according to the third embodiment of the present invention.
  • the TFT 106 and the wiring 107 are formed on the substrate body 105, and the interlayer insulating film 110 is formed on the TFT 106 and the wiring 107 as a protective film.
  • the interlayer insulating film 110 formed here is formed by a known technique (such as a low pressure CVD method, a plasma CVD method, or a thermal oxidation method).
  • the first planarizing layer 108a is formed.
  • the first planarizing layer 108a is formed by spin coating or other coating method, and is fired immediately after coating.
  • the first planarizing layer 108a preferably has a film thickness of at least 2 m as an interlayer insulating function.
  • a contact hole 114 is formed in the first planarizing layer 108a by a lithography method.
  • a direction C1 in FIG. 10 indicates a polishing process direction with respect to the first planarization layer 108a.
  • FIG. 11 is a cross-sectional view of the organic EL display device 100 in which the shape of the first planarization layer 108a before the CMP polishing step is indicated by a dotted line 120 with respect to FIG.
  • FIG. 11 shows that the unevenness of the first planarization layer 108a is reduced by the polishing process.
  • CMP method chemical mechanical polishing
  • the CMP method is a method of flattening the surface to be polished by chemical etching with chemicals and mechanical polishing with fine abrasive grains.
  • the slurry cerium oxide, alumina, silica, etc. are used, and as the node, polyurethane is used. Letan, suede, etc. are used.
  • the force of using cerium oxide as the slurry and polyurethane as the pad is not limited to this.
  • the substrate pressure is 0.1 MPa
  • the rotation speed is 50 rpm
  • the polishing time is 3 to 15 minutes, and 15 minutes.
  • the second planarizing layer 108b is formed on the first planarizing layer 108a.
  • the second planarization layer 108b makes the unevenness of the surface located immediately below the first electrode 111a substantially flat.
  • the second planarization layer 108b is formed by the same method as the first planarization layer 108a, and then the contact hole 114 is formed.
  • the film thickness of the second planarizing layer 108b is such that the unevenness of the layer below the first electrode 111a can be made almost flat and the contact hole 114 can be easily formed. 5 ⁇ 01-2.0 m is preferable.
  • the formation of the second planarization layer 108b is effective not only for planarization but also for mitigating the influence of scratches on the film surface of the first planarization layer 108a by the polishing process.
  • the polishing process of the first planarization layer 108a and the formation of the second planarization layer 108b are performed when the planarization layer under the pixel electrode is substantially planarized, and a film is formed when a pixel electrode and a light emitting layer 112b described later are formed. It plays an important role in reducing the thickness distribution.
  • contact holes 114 are formed so as to penetrate the first and second planarization layers 108a and 108b, respectively.
  • a first electrode 111a is formed so as to be electrically connected to the active matrix substrate 101 through a conductor.
  • the first electrode 11 la may be used as a conductor for connection.
  • the insulating layer 113 is formed so as to cover the edge portion of the first electrode 111a.
  • a SiO insulating film and an acrylic resin can be used for the insulating layer 113.
  • an organic layer 112 is formed so as to cover them, and a second electrode 111 b is formed on the organic layer 112.
  • an insulating film 103 functioning as a thin film sealing layer is formed on the second electrode 11 lb by a known technique (low pressure CVD method, plasma CVD method, thermal oxidation method, etc.). To do.
  • the sealing substrate 104 is bonded to the insulating film 103 through a sealant. As a result, the organic EL display device 100 is completed.
  • the first planarization layer 1 formed on the TFT 106 or the wiring 107 is used. Since the polishing of 08a is a process before the step reduction rate is significantly reduced, the time controllability is excellent, and polishing processing with high polishing efficiency and high step reduction rate is performed to reduce the unevenness to 50 nm or more and 200 nm or less. . Further, by forming the second planarization layer 108b above the polished first planarization layer 108a, the flatness of lOOnm or less, preferably 50nm or less, can be obtained with respect to the irregularities immediately below the first electrode 111a. Can do.
  • the formation of the second planarization layer 108b is effective not only in planarization but also in mitigating the influence of scratches on the surface of the first planarization layer 108a by the polishing process.
  • the film thickness distribution corresponding to the structure such as the TFT 106 below the first electrode 111a is reduced, and the luminance within the pixel is reduced.
  • the distribution can be improved and light emission can be obtained with high brightness uniformly in the pixel. As a result, excellent light extraction can be performed in the organic EL display device 100.
  • the unevenness corresponding to the structure such as the TFT 106 below the first electrode 11la is small, so the film thickness due to the unevenness is extremely large.
  • the thin region can be reduced. Therefore, it is possible to manufacture a high-quality organic EL display device 100 with few display defects and high yield, high productivity, and high yield.
  • the semiconductor layer used in the TFT may be an amorphous film or a polycrystalline film.
  • the maximum depth of the unevenness of the planarization layer 14 or the first planarization layer 108a is obtained by polishing the planarization layer 14 or the first planarization layer 108a.
  • the unevenness of the planarization layer 14 or the first planarization layer 108a is adjusted by adjusting the thickness of the planarization layer 14 or the first planarization layer 108a when forming the planarization layer 14 or the first planarization layer 108a.
  • the maximum depth of the unevenness of the planarization layer 14 or the first planarization layer 108a which may be set to a maximum depth of 10 nm or less, is only required to be 10 nm or less.
  • the first electrode 20 or the first electrode 11la is preferably formed of a material having a high work function (work function 4. OeV or more). This is because when a voltage is applied, holes are injected from the anode into the organic compound layer, so that the material must have a higher HOMO level than the organic compound forming the organic compound layer. Is . Since the anode is connected to the TFT, it is desirable that the anode be made of a low resistance material.
  • metallic materials Au, Ni, Pt, W, Cr, Mo, Fe, Co, Cu, etc.
  • conductive metal oxides ITO, IZO, ZnO, SnO, GZO, etc.
  • an oxide layer for example, an SiO layer, for enhancing the covering properties of the organic light emitting material paint and the organic transport material paint, etc.
  • the first electrode 20 may be formed to a thickness that does not interfere with the conductivity of the first electrode 20, for example, a thickness of about 1 nm.
  • the organic layer 30 or the organic layer 112 may be formed by, for example, spin coating, doctor blade method, discharge coating method, spray coating method, letterpress printing method, in addition to the inkjet method. It may be formed by a known organic layer forming process which may be formed by a known wet process such as an intaglio printing method, a screen printing method or a micro gravure coating method.
  • the organic polymer material of the organic layer 30 or the organic layer 112 may be a known light-emitting material for an organic LED element.
  • Such light emitting materials are classified into polymer light emitting materials, precursors of polymer light emitting materials, and the like.
  • polymer light emitting material for example, poly (2 decyloxy 1, 4 phenylene) (DO—PPP), poly [2,5 bis [2— (N, N, N triethylammonium) Um) Etoxy] 1, 4 Phenyl Alto 1, 4 Phenylylene] Dibromide (PPP— NEt 3+ ), Poly [2— (2′-Ethylhexyloxy) 5-Methoxy-1, 4 Phenylylene Vinylene] (MEH—PPV) or the like may be used.
  • DO—PPP poly (2 decyloxy 1, 4 phenylene)
  • PPP— NEt 3+ Poly [2— (2′-Ethylhexyloxy) 5-Methoxy-1, 4 Phenylylene Vinylene]
  • a precursor of the polymer light emitting material for example, a poly (P-phenylene vinylene) precursor (Pre-PPV), a poly (P naphthalene vinylene) precursor (Pre-PNV) or the like is used. You can.
  • the solvent may be any solvent that can dissolve or disperse the light-emitting material.
  • pure water, methanol, ethanol, THF (tetrahydrofuran), chloroform, toluene, xylene, trimethylbenzene, or the like is used. be able to.
  • the hole transport layer 31 or the hole transport layer 17b and the electron transport layer 17d constituting the charge transport layer may have a single layer structure or a multilayer structure, respectively.
  • the charge transport material of the charge transport layer the following known materials can be used.
  • hole transport materials include porphyrin compounds, N, N, -bis- (3 methylphenyl) N, N'-bis- (phenyl) -benzidine (TPD), N, N, 1-di (naphthalenes).
  • N-1 Ninore N, N, Diphenenolevendidine (NPD), Bis [N— (1 Naphthinore) — N Phenylenore] benzidine ( ⁇ NPD), N, N, 1 Diphenyl 1 N, N, 1 (4— (Di (3-tolyl) amino) phenyl) — 1, 3, 1, -biphenyl-4, 4, —diamine (DNTPD), etc., aromatic tertiary amine compounds, hydrazone compounds, quinacridone compounds, stilamine compounds Low molecular weight materials such as polyaniline, 3,4-polyethylenedioxythiophene / polystyrene sulfonate (PEDT / PSS), poly (triphenylamine derivative), polybulur rubazole (PVD), etc.
  • Polymer material, poly (P-phenylene vinylene ) Precursors such as precursors and poly (P-naphthalene vinylene) precursors can be used.
  • Examples of the electron transport material include tris (8 quinolinolato) aluminum (Alq3), bis (1 0 hydroxybenzo [h] quinolinato) beryllium (BeBq2), bis (2 methyl 8 quinolinolato) 4 phenolinophenol.
  • Metal complex materials such as tanenoreminium (BAlq) and bis [2- (2 hydroxyphenol) benzoxazolate] zinc (Zn (BOX) can be used.
  • 2- (4 biphenyl) -1- (4-tert-butylphenol) 1, 3, 4-oxadiazole (PBD), 3- (4-6 1-butylphenyl)- 4-phenyl-5- (4) biphenyl)-1, 2, 4 triazole (TAZ)), 3- (4-tert-butylphenyl) -4 (4-ethylphenyl) -5- (4-biphenyl) —1, 2, 4 Triazole (p—EtTAZ) and the like can be used.
  • the solvent is pure water, for example, methanol, ethanol, THF (tetrahydrofuran), chloroform, toluene, xylene, trimethylbenzene, and the like.
  • Any organic polymer material that is a hole transport material or any organic polymer material that is a light emitting material may be used as long as it can be dissolved or dispersed.
  • the organic layer 30 or the organic layer 112 may be composed of only the light emitting layer 32 or the light emitting layer 112b. Further, the organic layer 30 or the organic layer 112 includes the light emitting layer 32 or the light emitting layer 112b, the hole injection layer, the hole transport layer 31 or the hole transport layer 112a.
  • the electron transport layer and the electron injection layer 112c may be composed of one or more layers, and each of these layers is formed of a known organic low molecular weight material, organic polymer material, or a precursor thereof. I can do it.
  • the light emitting layer 32 or the light emitting layer 17c is not limited to the ink jet method, and can be formed by other known methods.
  • the low molecular organic light emitting layer can be formed by, for example, a vacuum deposition method.
  • the organic organic light emitting layer is formed by using a coating liquid for forming an organic light emitting layer, using a spin coating method, a doctor blade method, a discharge coating method, a spray coating method, a relief printing method, an intaglio printing method, a screen printing method, a micro printing method, or the like.
  • the film can be formed by a wet process such as a gravure coating method.
  • the organic light emitting layer forming coating solution is a solution containing at least a light emitting material, and may contain one or more kinds of light emitting materials. In addition, it contains leveling agents, light emission assist agents, additives (donors, acceptors, etc.), charge transport agents, luminescent dopants, etc.
  • the second electrode 50 or the second electrode 11 lb is, for example, the first group or the second group of the element periodic rule, that is, Li, Cs, Rb.
  • Alkali metals such as Ca, Sr, Ba, Mg, etc., and alloys containing these (Mg: Ag, A1: Li) and compounds (LiF, CsF, CaF) may also be used.
  • the polymer organic light emitting layer is, for example, the first group or the second group of the element periodic rule, that is, Li, Cs, Rb.
  • Alkali metals such as Ca, Sr, Ba, Mg, etc., and alloys containing these (Mg: Ag, A1: Li) and compounds (LiF, CsF, CaF) may also be used.
  • the polymer organic light emitting layer In addition to the polymer organic light emitting layer
  • the second electrode has an alloy or laminated structure with a scientifically relatively stable metal such as Ni, Os, Pt, Pd, Al, Au, Rh, Ag, etc., in order to suppress deterioration due to oxygen, water, etc. Preferably used.
  • the transparent electrode layer may be a single layer or a laminated film of a plurality of materials.
  • the second electrode 50 or the second electrode 11 lb is an auxiliary metal wiring or the like separately from the second electrode 50 or the second electrode 11 lb.
  • Auxiliary electrode wiring can be formed. In that case, the transparent electrode 52 may not be formed.
  • the second electrode 50 or the second electrode 11 lb It may be formed only on the surface of the organic layer 30 or the organic layer 112, and may be formed so as to cover at least the organic layer 30 or the organic layer 112! /.
  • the substrate body 11 is a semiconductor substrate made of a glass substrate, a plastic substrate, a silicon wafer, etc.
  • the present invention is not limited to this, and an organic EL display Any substrate can be used as long as it can guarantee the mechanical strength of the devices 1 and 100 and has an insulating property.
  • the switching element is assumed to be TFT12 or TFT106.
  • the present invention is not limited to this, and other known switching elements may be used.
  • each of the plurality of first electrodes 20 or first electrodes 11 la is formed in a rectangular shape.
  • the present invention is not limited to this, and various shapes are possible. You may have.
  • the sealing film 60 or the sealing substrate 104 is formed on the second electrode 50 or the second electrode 11 lb, the organic layer 30 or the organic layer 112, and the second electrode.
  • the force formed so as to cover 50 or the second electrode 1 l ib is not limited to this. That is, the organic layer 30 or the organic layer 112 and the second electrode 50 or the second electrode 11 lb are placed on the organic layer 30 or the organic layer 112 and the second electrode 50 or the second electrode 11 lb from moisture in the atmosphere.
  • the organic layer 30 or organic layer 112 and the second electrode 50 or the second electrode 11 lb which may be provided with a can, sealed or sealed can, are protected against moisture in the atmosphere! / Do it !
  • Example 1 and Example 2 having the structure of Embodiment 1 above, and Example 3 and Example 4 having the structure of Embodiment 2 described above were carried out over time.
  • the accompanying increase in pixel defects was measured. Note that the maximum depth D of the unevenness on the surface of the planarizing layer 14 described below was measured with a stylus type step gauge.
  • the planarization layer 14 was formed on the surface of the planarization layer 14 without performing the polishing treatment.
  • the thickness of the acrylic resin layer 14b is 8, and the maximum depth D of the unevenness on the surface of the planarizing layer 14 is 48 nm.
  • the first electrode 20 is formed with Ni to a thickness of 150 nm.
  • the insulating layer 40 was formed in a laminated structure of an SiO layer and an acrylic resin layer.
  • the organic layer 30 was composed of a hole injection layer and a light emitting layer 32.
  • the hole injection layer was formed on the first electrode side, and the light emitting layer 32 was formed on the second electrode 50 side.
  • the hole injection layer is made of polyester.
  • the thickness of the hole injection layer was formed to 60 nm by controlling the concentration of the mixed solution and the amount of ink droplets dropped.
  • the light emitting layer 32 was formed by applying a solution of a polyfluorene derivative by an ink jet method and the same method as the hole injection layer.
  • the second electrode 50 was formed so as to have a thickness of 10 nm.
  • the planarization layer 14 was formed on the surface of the planarization layer 14 without performing the polishing treatment.
  • the thickness of the acrylic resin layer 14b is 2 m
  • the maximum depth D of the unevenness on the surface of the flattening layer 14 is 380 nm.
  • the thickness H of the first electrode 20 is 400 nm.
  • the other structure of Example 2 is the same as that of Example 1 above.
  • the acrylic resin layer 14b having a thickness of 2 m was formed by polishing the acrylic resin layer 14b having an initial thickness of 4 m.
  • the maximum depth D of the irregularities on the surface of the planarized layer 14 is 62 nm.
  • the thickness of the first electrode 20 is 150 nm.
  • the structures of the organic layer 30 and the second electrode 50 in Example 3 are the same as in Example 1 above.
  • the surface of the planarization layer 14 was not polished, the acrylic resin layer 14b had a thickness of 2 Hm, and the surface of the planarization layer 14 was uneven.
  • the maximum depth D is 320nm.
  • the thickness H of the first electrode 20 is 400 nm.
  • the structures of the organic layer 30 and the second electrode 50 in Example 4 are the same as in Example 1 above.
  • Comparative Example 1 to Comparative Example 3 were also measured for an increase in pixel defects with time, as in Examples 1 to 4. Further, as Comparative Examples of Example 3 and Example 4, also in Comparative Examples 4 to 6, the increase in pixel defects with the passage of time was measured in the same manner. In the following, the organic EL display devices of Comparative Example 1 to Comparative Example 6 will be described using the same reference numerals as in Examples 1 to 4 for easy understanding.
  • the thickness H force of the first electrode 20 is 300 nm, 200 nm, and 100 nm, respectively.
  • the structures other than the first electrode 20 of Comparative Examples 1 to 3 are the same as those of Example 2 described above.
  • the thickness H force of the first electrode 20 is 300 nm, 200 nm, and lOOnm, respectively.
  • the structures other than the first electrode 20 in these comparative examples 4 to 6 are the same as those in the fourth embodiment.
  • These organic EL display devices 1 of Examples 1 to 4 and Comparative Examples 1 to 6 have 320 ⁇ 240 pixels.
  • a voltage was applied between 20 and the second electrode 50, and a control signal was sent to the TFT 12 so that green light was emitted uniformly over the entire display area.
  • a control signal was sent to the TFT 12 so that green light was emitted uniformly over the entire display area.
  • uniform green emission was confirmed.
  • no noticeable nonuniform luminance distribution was observed in the pixel.
  • Example 2 Example 4, and Comparative Examples 1 to 6 variation in the luminance distribution was confirmed.
  • the lighting state in the pixel was observed using an optical microscope, it was confirmed that the light and darkness corresponding to the irregularities on the surface of the planarization layer 14 was confirmed in these organic EL display devices.
  • the luminance of the entire panel surface of Example 2 and Comparative Examples 1 to 3 is about 40% of the luminance of the entire panel surface of Example 1, and Example 4 and Comparative Example 4 to Comparative Example
  • the brightness of the entire panel surface of Example 6 was about 40% of the brightness of the entire panel surface of Example 3.
  • Table 1 shows the number of increased pixel defects in Example 1, Example 2, and Comparative Examples 1 to 3.
  • Table 2 shows the number of increased pixel defects in Example 3, Example 4, and Comparative Example 4 to Comparative Example 6.
  • Example 1 there was no increase in pixel defects.
  • Example 2 only one increase in pixel defects was confirmed.
  • Comparative Example 1 to Comparative Example 3 an increase in 10 or more pixel defects was confirmed, and as the thickness H of the first electrode 20 was smaller than the maximum depth D of the unevenness on the surface of the planarization layer 14, the increased pixels were observed. The number of defects has increased.
  • Example 3 there was no increase in pixel defects. On the other hand, in Example 4, only two pixel defects were confirmed. In Comparative Examples 4 to 6, in each case, 10 or more pixel defects were confirmed, and the thickness H of the first electrode 20 was smaller than the maximum depth D of the concave / convex surface of the planarizing layer 14! The number of increased pixel defects has increased.
  • the first electrode 20 is formed so that the thickness H force of the first electrode 20 is greater than the maximum depth D of the unevenness on the surface of the planarizing layer 14. The ability to reduce pixel defects S
  • FIG. 4 is an enlarged cross-sectional view of the sample device 2 used for confirming the influence of the luminance on the organic EL display device by the maximum depth D of the unevenness on the surface of the planarizing layer 14.
  • a direction L2 in FIG. 4 indicates a light emission direction to the outside of the concave region A1
  • a direction L3 indicates a light emission direction to the outside of the convex region A2.
  • the sample apparatus 2 was formed so as to cover the glass substrate 11, the metal material 5 provided in a stripe shape on one surface of the glass substrate 11, and the metal material 5, as shown in FIG. Planarization layer 14, a first electrode 20 formed so as to cover the planarization layer 14, an organic layer 30 formed so as to cover the first electrode 20, and a second electrode 50 formed on the surface of the organic layer 30 And.
  • the metal material 5 was formed by forming a 1 ⁇ m-thick A1 film on one surface of the glass substrate 11 by sputtering, and then forming a stripe pattern with a width and interval of lmm by a photolithography method. did.
  • the planarization layer 14 was formed by applying an acrylic resin to the surface of the glass substrate 11 on which the metal material 5 was formed by spin coating, and then performing a baking treatment. On the surface of the planarizing layer 14, stripe-shaped concaves and convexes are formed corresponding to the metal material 5 formed in a stripe shape.
  • the first electrode 20 was a Ni film, and was formed on the surface of the planarization layer 14 by electron vapor deposition.
  • the thickness D of the first electrode 20 is lOOnm.
  • the organic layer 30 was formed by applying an organic polymer material on the first electrode 20 by a spin coating method and then performing a baking treatment.
  • the second electrode 50 is a laminated film of Ca and A1, and was formed by an electron vapor deposition method using a mask.
  • the second electrode 50 is continuously formed in the adjacent concave and convex regions of the striped irregularities on the surface of the planarizing layer 14.
  • the area of the recessed area A1 where the second electrode 50 is formed is approximately equal to the area of the raised area A2.
  • Light emission is extracted in a 2 mm ⁇ 2 mm region where the first electrode 20 and the second electrode 50 overlap by applying a voltage between the first electrode 20 and the second electrode 50. That is, the luminance was measured in the region where the second electrode 50 was formed, that is, the concave region A1 and the convex region A2 having approximately the same size.
  • the brightness of the concave region A1 and the convex region A2 can be measured by changing the thickness of the flattening layer 14 so that the maximum depth D of the flattened layer 14 is variously large such that it is 15 ⁇ m or more and 380nm or less. A plurality of sample devices 2 having a thickness were used.
  • FIG. 5 is a graph showing the ratio of the luminance of the concave region A1 and the convex region A2 with respect to the maximum unevenness depth D of the planarization layer 14 obtained in this example. Since the luminance was measured in the concave area A1 and the convex area A2 having approximately the same area, the value of “luminance in the convex area / luminance in the concave area” on the vertical axis is 1.0. S Desirably, the closer the value is to 1.0, the higher the uniformity of the luminance distribution in the concave region A1 and the convex region A2.
  • the maximum depth D of the unevenness of the planarization layer 14 is lOOnm or less, the value of “brightness of the convex region / brightness of the concave region” is 0.9 or more. In these regions Al, A2 The brightness uniformity is relatively high.
  • the organic EL display devices according to Examples 5 to 7 having the structure of the third embodiment were implemented, and the maximum depth of the unevenness after the unevenness generated on the surface of the first planarization layer was polished.
  • the maximum depth of the unevenness of the second planarization layer formed after the polishing treatment of the first planarization layer was measured using a stylus type step gauge.
  • Table 3 shows the maximum depth of each unevenness after polishing of the first planarization layer for Examples 5 to 7 and Comparative Examples 7 to 8 as test evaluation results of the third example.
  • the required time and the number of scratches, the maximum depth of each unevenness after forming the second planarization layer, the lighting state in the pixel of the organic EL display device, and the number of display defects are shown.
  • ⁇ in the lighting state in the pixel in Table 3 indicates that the lighting state is good
  • X indicates that the lighting state is bad.
  • the number of scratches was confirmed using an optical microscope.
  • the number of scratches generated was the average value of six 2.4 inch panels in a 320mm x 400mm substrate.
  • Example 5 a 320 mm ⁇ 400 mm substrate on which six 2.4 inch panels were mounted was used. On the substrate on which a plurality of TFTs and signal lines were formed, an acrylic resin was laminated to a thickness of 2 m as a first planarization layer by a spin coating method. When the first planarization layer was formed on the substrate on which the TFT and the signal line were formed, a concavo-convex pattern of 470 nm was generated on the surface. By polishing the unevenness that occurred on the surface of the first planarization layer, the maximum depth of the unevenness was reduced to 50 nm.
  • FIG. 6 is a diagram showing the maximum depth of the unevenness with respect to the polishing time in the CMP method of the planarization layer in Example 5.
  • the second planarization layer is laminated with an acrylic resin having a thickness of 2 ⁇ 111 in the same manner as the first planarization layer. Layered. Other than these, an organic EL display device was fabricated in the same manner as in Embodiment 3 above.
  • Example 6 the maximum depth of the unevenness was reduced to lOOnm by polishing the unevenness generated on the surface of the first planarization layer.
  • the polishing time required 5 minutes.
  • An organic EL display device was produced in the same manner as in Example 5.
  • Example 7 the maximum depth of the unevenness was reduced to 200 nm by polishing the unevenness generated on the surface of the first planarization layer. The polishing time took 2 minutes.
  • An organic EL display device was fabricated in the same manner as in Example 5 except for the above.
  • Comparative Example 7 the maximum depth of the irregularities was reduced to 30 nm by polishing the irregularities generated on the surface of the first planarization layer.
  • the polishing time required 20 minutes. This is a polishing time more than twice that of Examples 5 to 7 described above, and the productivity is remarkably inferior. As shown in Fig. 7, when the unevenness is less than 50 nm, the polishing time becomes extremely long because the unevenness change tends to be particularly small. Except for the above, an organic EL display device was produced in the same manner as in Example 1. [0181] In the organic EL display device of Comparative Example 7, when the first planarization layer was polished, 10 scratches were generated on the film surface, and an increase in the number of display defects of 16 pixels was observed. .
  • Comparative Example 8 the maximum depth of the unevenness was reduced to 300 nm by polishing the unevenness that occurred on the surface of the first planarization layer. The polishing time took 1 minute. Except for the above, an organic EL display device was fabricated in the same manner as in Example 3.
  • the organic EL display device of Comparative Example 8 left problems with display quality and reliability.
  • the present invention is useful for an organic-electric-mouth luminescence display device and a method for manufacturing the same, and in particular, by improving the flatness of the surface of the first electrode. This is suitable for improving display quality.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne une première électrode qui est formée de façon à avoir une épaisseur qui n'est pas inférieure à la profondeur de rugosité maximale parmi les cavités et les projections formées dans la surface d'une couche de planarisation.
PCT/JP2007/066921 2006-09-19 2007-08-30 Écran électroluminescent organique et procédé de fabrication de celui-ci Ceased WO2008035556A1 (fr)

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JP2020024930A (ja) * 2018-03-28 2020-02-13 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
CN111564477A (zh) * 2020-05-18 2020-08-21 京东方科技集团股份有限公司 显示面板及其制备方法和显示装置
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US11114517B2 (en) 2018-03-28 2021-09-07 Sakai Display Products Corporation Organic EL display apparatus and method of manufacturing organic EL display apparatus
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JP2019149378A (ja) * 2019-04-22 2019-09-05 堺ディスプレイプロダクト株式会社 フレキシブルディスプレイ、その製造方法、およびフレキシブルディスプレイ用支持基板
JP7139504B2 (ja) 2019-10-11 2022-09-20 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
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JP2021182555A (ja) * 2019-10-11 2021-11-25 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
JP7410242B2 (ja) 2019-10-11 2024-01-09 堺ディスプレイプロダクト株式会社 有機ｅｌ表示装置及びその製造方法
CN111564477A (zh) * 2020-05-18 2020-08-21 京东方科技集团股份有限公司 显示面板及其制备方法和显示装置

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