[go: up one dir, main page]

WO2008034429A1 - Composant de filtre - Google Patents

Composant de filtre Download PDF

Info

Publication number
WO2008034429A1
WO2008034429A1 PCT/DE2007/001692 DE2007001692W WO2008034429A1 WO 2008034429 A1 WO2008034429 A1 WO 2008034429A1 DE 2007001692 W DE2007001692 W DE 2007001692W WO 2008034429 A1 WO2008034429 A1 WO 2008034429A1
Authority
WO
WIPO (PCT)
Prior art keywords
filter
metallization
finger
component according
finger metallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2007/001692
Other languages
German (de)
English (en)
Inventor
Andreas Detlefsen
Zoltan Kovats
Maximilian Pitschi
Jürgen KIWITT
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Publication of WO2008034429A1 publication Critical patent/WO2008034429A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H03H9/725—Duplexers

Definitions

  • SAW Surface Acoustic Wave
  • a dielectric layer can be arranged over the metallic filter structures of a SAW filter.
  • other critical electrical parameters typically also deteriorate at the same time. For example, an increased finger resistance, a reduced coupling or a reduced finger reflection are observed with it.
  • Improved performance in a SAW filter can be achieved by using high performance metals be improved. In general, however, this is paid for with an increased finger resistance, which results in an increased insertion loss and thus an increased power consumption of the component.
  • Object of the present invention is therefore to provide a filter component with respect to the o. G. Specify filter properties improved behavior in which the mentioned disadvantages are minimized.
  • the invention is based on the recognition that optimizations made in a filter component in the metallization structures are not effective to the same extent in all filter regions. It is therefore proposed to carry out the metallization for the acoustic conduction path of a SAW filter in a filter component only in certain areas of the metallization and in particular for certain filter elements in which the associated positive effect is maximal. With regard to the other filter elements, for which a corresponding optimization is associated with little or minimal success, this corresponding optimization is dispensed with.
  • a filter component which comprises at least a first and a second SAW filter element.
  • the first filter element has a first finger metallization and the second SAW filter element a second finger metallization, which differ in their construction and wherein the first finger metallization has a higher performance.
  • a filter component comprises at least parts of a SAW filter, one or more complete SAW filters, and optionally further components which may be interconnected with the filters or generally together with the filter elements.
  • a filter device may e.g. a SAW filter, a duplexer, a diplexer, a front-end module or a transceiver module.
  • filter element is meant a functional unit of a SAW filter having at least one acoustic track.
  • a simple filter element is, for example, a resonator which has at least one electroacoustic transducer which is delimited on both sides of the acoustic track by a respective reflector.
  • a filter element may also comprise resonators with a plurality of transducers, a DMS track or a transversal filter.
  • Finger metallization is understood to mean the metallization of the component structures which are arranged within the acoustic track and excite or reflect an acoustic wave during operation of the filter component.
  • Other metalizations such as, in particular, busbars and other interconnects or electrically conductive structures that are possibly assigned to a filter element, do not fall under the definition of finger metallization and are not considered here. This does not exclude that these other structures have the same metallization as the finger electrodes and reflectors of the filter element.
  • Under different structure of a finger metallization are understood basically different constructions that differ not only by a scale and in particular by a different metallization height. A different structure thus relates to different materials, different sequences of layers of electrode materials or the same sequences with different thickness ratios of the electrode sublayers.
  • Power durability of finger metallization is understood to mean the structural integrity of a finger electrode when subjected to maximum power. A diminished power resistance of a finger metallization leads to changes in the material up to the electrical load in combination with mechanical acoustic stress
  • First and second filter element are directly interconnected and preferably realized on a common chip.
  • direct interconnection is understood that no active components such as amplifiers or active semiconductor devices are arranged between the two filter elements.
  • the direct interconnection does not exclude that passive components, inductances, resistances and capacitances are provided or parasitically effective between the two filter elements.
  • the SAW filter elements of a filter component can be interconnected in different ways.
  • Multiple filter elements may represent a filter segment of a SAW filter, with multiple filter segments then electrically are cascaded and result in the interaction 'in .der cascade the filter.
  • Cascading is the arrangement of the filter segments along a signal path.
  • a filter segment can also comprise a plurality of filter elements designed as resonators, which together form a basic element of a reactance filter.
  • Such a basic element has at least one series resonator arranged in the serial signal path and at least one parallel resonator arranged in a transverse branch to ground.
  • a basic element can also comprise resonators which themselves are cascaded.
  • a filter segment may also comprise a DMS trace which is connected to at least one serial or parallel.
  • Resonator or in combination with at least one basic element of a reactance and / or several other filter elements forms a SAW filter.
  • an input and an output side can be defined which corresponds to the application-oriented direction of the electrical signal through the cascade.
  • the filter effect and the losses of each segment mean that the power actually flowing through the segment usually decreases from segment to segment and filter segments arranged on the input side therefore have to withstand the highest power, filter segments arranged on the output side have to withstand or pass through the relatively lowest power.
  • a second or further filter segments which are arranged "behind" the first filter segment in the direction of the output side, can have a conventional standard metallization or the said second metallization with the lower power resistance.
  • a filter component may comprise two filters of at least one filter element each, which are connected to form a duplexer.
  • a duplexer has a transmit and a receive path in which at least one filter segment is arranged. In the duplexer can then be provided on the input side first filter segment in the transmission path with the first finger metallization. If the transmission and reception paths in the metallization are differentiated, a significantly improved power density of the duplexer can be achieved solely with the improved power stability of the filter in the transmission path since the transmission path is subjected to a higher power in normal operation than the reception path. In addition, it is also possible to provide at least the input-side first filter segment with the first finger metallization in the reception path.
  • a TC compensation layer is a layer which has the temperature coefficient TK of a structure provided with such a layer. reduced tur (filter element).
  • a TK compensation layer therefore generally has a lower temperature response or a temperature response with respect to at least one parameter with opposite sign to the structure to be protected.
  • critical temperature response in particular the temperature response of the frequency is considered because it affects the properties of the filter component most and in particular can move the flanks of the passband inadmissible.
  • Ltechnik can comprise a silicon oxide layer. This has the advantage that even at low relative layer thicknesses (based on the wavelength at the center frequency of the filter) show a compensation effect.
  • Suitable TK compensation layers therefore have relative layer thicknesses of at least 5%. With increasing layer thickness, although the temperature compensation is improved, but at the same time deteriorates electrical values. It is therefore advantageous to use the TC compensation layer only for those filter elements or filter segments which are particularly critical with respect to the temperature response and in particular particularly critical with respect to the temperature response of the frequency of the passband edges. Meaningful and advantageous, it is therefore z. B., as an input-side filter segment in the receiving path to provide a ladder type structure of resonators and to cover their finger metallization with a TK compensation layer.
  • DMS tracks are provided in the filter component, then it is advantageous to provide further or all DMS tracks with the TK compensation layer.
  • the filter elements of the reception filter are advantageously provided with the first power metallization whose resonant frequency lies in the vicinity of the transmission band.
  • a filter component with a transmit and a receive path, each consisting of at least one filter segment, in which each filter segment of the two signal paths each comprise at least one basic element of a reactance filter, and wherein a series resonator in the receive path and a parallel resonator in the transmission path are equipped with the first finger metallization.
  • a series resonator in the receive path and a parallel resonator in the transmission path are equipped with the first finger metallization.
  • there is at least one parallel resonator in the reception path which is equipped not with the first but with the second power metallization with the lower power resistance.
  • Resonance constructed reactance filter-r the two edges of the passband (pass band) of differently arranged resonator types are determined. For example, the right flank of the passband through a serial resonator. determined, the left edge, however, by the parallel resonators of the reactance filter.
  • the filter segments of the transmit path are matched to the Tx band of a mobile radio system, which is usually at lower frequencies than the associated Rx band.
  • CDMA system in the PCS system is the widespread in the US market CDMA system in the PCS system.
  • the distance between the Rx band and the Tx band is so small that the passbands of the corresponding transmit and receive filters in the duplexer must have particularly steep edges, so that the passbands do not overlap or the frequencies of the other band are sufficiently suppressed.
  • Inventive embodiment of the filter elements (resonators), which are responsible for each of the other transmission band facing edge of the passband, succeeds with simple
  • these filter elements are provided with first finger metallization and TK compensation layer.
  • the TC compensation layer results in a reduction of the temperature gradient of the filter or of the filter component.
  • the disadvantages associated with the TK compensation layer are limited to the filter elements which, in the special case of the duplexer, have a significant temperature-dependent effect on the respective mutual band suppression of the two transmission bands.
  • Finger metallizations provided with a TK compensation layer lead to filter elements whose properties are worsened compared to filter elements which have the same finger metallization but without a TK compensation layer and in particular have a reduced coupling.
  • An optimization of a filter component with regard to all filter elements can lead to a total of three different finger metallizations being used, namely a first power-resistant metallization without TC compensation layer, a second power-resistant metallization with TC
  • the last-mentioned finger metallization tion ' may comprise an aluminum / copper / aluminum MehrSchichtauf- construction with a low volume fraction of copper, for example, a total of less than 8%, which may be realized as a three-layer composite.
  • a high performance first metallization has e.g. a higher copper volume fraction of more than 10 percent. and is preferably realized from a layer structure comprising at least five partial layers, in which aluminum and copper layers alternate.
  • other metals and metal alloys are suitable for increasing the strength of performance, for example those combinations as known from DE 102 06 369 A, to which reference is hereby made by full reference.
  • finger metallization may also include passivation layers, which are preferably formed as an uppermost layer or as a coating of finger metallizations.
  • passivation layers may e.g. Silicon oxide, silicon carbide, silicon nitride, diamond-like carbon (DLC), titanium oxide or magnesium oxide each alone or in combination with other materials mentioned or not mentioned.
  • further metallizations may be present in a filter component from which printed conductors, busbars or pads serving as electrical connection pads are realized. Since these metal structures are arranged outside the acoustic tracks and therefore have little or no effect on the acoustic properties of SAW
  • these metallizations can be optimized under other aspects.
  • Such fourth metallizations may, for example, be thickened or have a bondable or solderable surface.
  • Such metal structures may also serve to interconnect different filter elements in the filter device.
  • FIG. 1 shows a filter component with cascaded filter segments
  • FIG. 2 shows a filter device with two SAW filters, each consisting of cascaded filter segments
  • FIG. 3 shows the transmission curve of a filter according to the first embodiment
  • FIG. 4 shows a filter component constructed from different filter elements
  • FIG. 5 shows a further filter component constructed from different filter elements.
  • the filter component shown in FIG. 1 is implemented on a chip CH and comprises a plurality of cascaded filter segments FS 1 to FS 11 , where n ⁇ 2.
  • the filter component (here a SAW filter) has a first terminal T 1 used as the signal input and one used as the output second terminal T2.
  • the filter segments can be designed in different chen SAW techniques, for example, basic members of a Reaktarizfilters, that at least each a serial resonator and a parallel resonator constitute, ⁇ or do not have the DMS track or other cascadable filter element or filter segment, for example, be designed as a single input or multi-port resonator. Notwithstanding the representation in FIG. 1, different filter segments of the filter component can also be arranged on different chips.
  • At least the filter segment FSi first filter segment
  • At least the filter segment FS N last filter segment
  • other finger metallizations can also be used.
  • At least the input-side filter segment has the higher power resistance, which can be realized, for example, in an aluminum-copper multilayer composite which is designed, for example, as HPD (High Power Durability) metallization and, for example, five alternating layers Al / Cu / Al / Cu / Al / Cu / Al.
  • the copper layers can be designed substantially thinner than the aluminum layers, but in the overall composite have a significantly higher total copper content than the standard metallization, which improves the power resistance compared to the standard metallization.
  • FIG. 2 ' shows a filter component in which two SAW filters, comprising a transmission filter with the index S and a reception filter with the index E, are arranged on a chip CH, where, for each of the filters, at least two cascaded filter elements segments FS e (S exists.
  • Each of the SAW filter is connected to a matching network MM to ensure the duplexer, which summarizes a suitable connection of passiven- components such as inductors, capacitors and lines environmentally.
  • the matching network are the two filters with connected to a first terminal Tl.
  • transmission filter is connected on the other side of the cascade with a used as a transmission-side input second terminal T 32, the reception filter 'the other hand, to a terminal T E2, of the output of the Reception paths.
  • the two SAW filters according to the invention are fitted so that • at least the cascade in each of the sub-filter
  • each of the two sub-filters may comprise further filter segments FS n - m , where 1 ⁇ m ⁇ n. These filter segments arranged in the "inside" cascade can then have the first power-resistant or the second relatively less powerful finger metallization relative thereto.
  • the first filter segment FS S i of the transmission filter is the port T 32 at the entrance the next, while the first filter segment FS E i of the reception filter is arranged closest to the terminal Tl.
  • Figure 3 shows the transmission curves of the present invention composed of three cascaded filter segments filter, - in which only has the first filter segment having a relation to the second and third filter segment in the line resistance ve rbes- ⁇ serte metallization. Second and third filter segments have the second metallization.
  • the transmission curve of this filter according to the invention (solid curve 3) is compared in the figure with the transmission curves of two comparison filters which have the same structure, but in each case a uniform finger metallization of the first (dashed lower curve 1) or second finger metallization ( shorter dashed upper curve 2).
  • FIG. 3 shows that a filter constructed exclusively from first finger metallization has the greatest insertion loss due to the electrical losses in the region of the passband (see curve no. 1), while a filter constructed exclusively of second finger metallization
  • FIG. 4 shows a concrete interconnection of filter elements on the basis of an exemplary filter component FBE designed as a duplexer.
  • a transmit filter SF is directly connected to a receive filter EF, wherein the term directly interconnected includes the interposition of passive components, which together can result in an adaptation network MN.
  • Both filters SF, EF are with. connected to an antenna ANT.
  • the transmission filter has four in se- ' rial resonators 3 S ⁇ to S 34 , which are connected in series between the input of the transmission filter SF at the terminal T s and the antenna ANT. The connection between the input of the transmit filter and the antenna represents the signal path of the transmit filter. Between each two serial resonators S s , a shunt branch is connected to ground, in each of which a parallel resonator P s i to P s3 is arranged.
  • reception filter EF three serial resonators S E ⁇ to S E3 and a strain gauge filter DMS E are connected in series in the signal path between the antenna ANT and the terminals T E and T E > at the output of the reception filter. Between each two of these filter elements, a shunt branch is connected to ground, in each of which a parallel resonator P Ei to P E3 is arranged.
  • all the serial resonators Ss of the transmission filter SF are equipped with the relatively high-performance first finger metallization.
  • a TK compensation layer in the form of a silicon oxide layer is arranged above these serial resonators.
  • All of the parallel resonators of the transmit filter SF are also equipped with the first finger metallization, but have no TK compensation layer -on.
  • In the receive filter EF are all parallel resonators P E1 to P E3 with high-performance first metallization plus TK compensation layer while the serial resonators S EI to S B 3 are formed with the first finite metalization without a TK compensation layer.
  • the DMS track DMS E at the output side of the reception filter is provided with a second power less solid Fingermetallmaschine which, however, for HAT better conductivity and lower electrical 'losses.
  • all the filter elements of the transmission filter are equipped with the high-performance first metallization and additionally the serial resonators S s covered with the TK compensation layer.
  • All the serial and parallel resonators of the reception filter are also formed from the power-stable first metallization, the parallel resonators having the TK compensation layer.
  • the terminal element in the cascade filter element here the DMS track DSM E connected to the output connections T E and T E ⁇ is, on the other hand, designed with a standard well-conducting finger metallization (second finger metallization) and without a TK compensation layer.
  • further filter elements may be formed with the second finger metallization in the reception filter EF, which must meet lower power requirements.
  • the parallel resonator arranged at the beginning can additionally be equipped with the TK compensation layer. In . all cases will be one .
  • Filter component obtained which compared to a known filter component of exclusively high-performance metallization has improved electrical values and which compared to a known filter component of only good.
  • conductive, but low-performance standard metallization has improved power resistance and thus longer life or higher reliability, without undermining the electrical properties of the filter device.
  • a DMS track is used as a terminal filter segment in a reception filter EF, then as shown in FIG. 4, a symmetrical signal can be tapped off at the output T E , T B , since the DMS track is also tapped in a suitable embodiment can be used as BALUN.
  • FIG. 5 shows a duplexer embodied according to the invention, which in the receive filter EF has a serial number of the same number.
  • Ler and parallel resonators has a slightly varying interconnection.
  • One of the series resonators is connected in series between the strain gauge DMS E and the output T E.
  • the second output of the strain gauge track is connected to ground. Since, in the cascade section between the DMS track and the antenna ANT, the number of serial resonators is reduced compared to that of the parallel resonators, the series resonators are arranged between the nodes at which the transverse branches with the parallel resonators are connected to the signal path.
  • Another series resonator S E3 is arranged between the output T E of the reception filter and the DMS track DMS E.
  • the transmission filter SF is designed as in FIG. 4 and has the already described finger metallization with or without TC compensation layer in the individual resonators.
  • DMS track DMS E and terminal serial resonator S E3 formed with the second metallization, which is a good electrical conductivity standard metallization with relatively low power resistance.
  • the first series resonator and all the parallel resonators of the reception filter are formed with a power-stable first metallization, wherein additionally the first and third parallel resonators P E1 , P B3 are occupied by a TK compensation layer, which over the finger metallization or over the whole area over the corresponding Regions of the resonators is arranged.
  • the middle parallel resonator P E2 of the reception filter is formed with a performance-compatible metallization without TK-S ⁇ hicht. Also applies to this embodiment that the e- lektrischen data such as kindness and insertion loss of the individual filters are at near optimum levels, the performance of resistance against im- ⁇ Standard Fingermetallmaschine sert. Compared to filters made of high-performance metallization, the electrical values are improved.
  • Filter devices according to the invention can be constructed on the same chip. It is also possible to arrange the two sub-filters (transmit filter SF, receive filter EF) on different chips. Another possibility is to arrange the filter elements, which have the same metallization, on a common chip, and since at least two different finger metallizations are provided
  • Filter elements of the two filters to be arranged on different chips, so that the filter elements of at least one sub-filter come to rest on different chips.
  • the invention is not limited to the few illustrated embodiments. Rather, it has already been explained that the distribution of the different finger metallizations via the filter elements of the filter device can also take place differently, wherein, however, the principle is taken into account that the filter elements arranged in the signal flow direction on the input side fixed filter metallization and at least one closer to the output filter element a has the second compared to the first Wier performance trained finger metallization. As shown with reference to FIG. 5, this need not be exclusively the filter elements arranged in the cascade on the output side. Rather, in filter elements and segments, first and second finger metallizations can alternate along the signal path.
  • a filter component according to the invention is not limited to the illustrated structures, but rather filter components according to the invention may comprise one or more SAW filters. but not necessarily connected to duplexers.
  • Two SAW filters can also diplexers comparable ⁇ be on, which are characterized in that for both interconnected filter the same signal propagation direction is considered. It is also possible to cascade a diplexer and a duplexer and even arrange the filter elements required for this purpose on the same or even several chips.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention concerne un composant de filtre composé d'un premier et d'un deuxième élément de filtre à ondes acoustiques de surface. Un premier élément de filtre disposé côté entrée présente une première métallisation de doigt et un deuxième élément de filtre disposé plus près de la sortie présente une deuxième métallisation de doigt. Les métallisations de doigt sont de constructions différentes et la première métallisation de doigt présente une plus grande résistance à la puissance.
PCT/DE2007/001692 2006-09-21 2007-09-19 Composant de filtre Ceased WO2008034429A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006044663.1 2006-09-21
DE200610044663 DE102006044663A1 (de) 2006-09-21 2006-09-21 Filterbauelement

Publications (1)

Publication Number Publication Date
WO2008034429A1 true WO2008034429A1 (fr) 2008-03-27

Family

ID=38947363

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2007/001692 Ceased WO2008034429A1 (fr) 2006-09-21 2007-09-19 Composant de filtre

Country Status (2)

Country Link
DE (1) DE102006044663A1 (fr)
WO (1) WO2008034429A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008052222B4 (de) 2008-10-17 2019-01-10 Snaptrack, Inc. Antennen Duplexer mit hoher GPS-Unterdrückung
US11942924B2 (en) 2020-11-23 2024-03-26 Rf360 Singapore Pte. Ltd. Filter with multiple outputs or inputs to implement multiple filter frequency responses

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050264136A1 (en) * 2004-05-31 2005-12-01 Jun Tsutsumi Surface acoustic wave device
WO2006015639A1 (fr) * 2004-08-04 2006-02-16 Epcos Ag Composant electroacoustique presentant de faibles pertes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3568025B2 (ja) * 1999-05-14 2004-09-22 株式会社村田製作所 表面波装置及び通信機装置
JP3801083B2 (ja) * 2001-06-06 2006-07-26 株式会社村田製作所 弾性表面波装置
DE10206369B4 (de) * 2002-02-15 2012-12-27 Epcos Ag Elektrodenstruktur mit verbesserter Leistungsverträglichkeit und Verfahren zur Herstellung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050264136A1 (en) * 2004-05-31 2005-12-01 Jun Tsutsumi Surface acoustic wave device
WO2006015639A1 (fr) * 2004-08-04 2006-02-16 Epcos Ag Composant electroacoustique presentant de faibles pertes

Also Published As

Publication number Publication date
DE102006044663A1 (de) 2008-04-03

Similar Documents

Publication Publication Date Title
DE10246791B4 (de) Mit akustischen Volumenwellen arbeitender Resonator und Schaltung mit dem Resonator
DE102004037819B4 (de) Elektroakustisches Bauelement mit geringen Verlusten
DE102009011639B4 (de) Reaktanzfilter mit steiler Flanke und dessen Verwendung als Sendefilter in einem Duplexer
DE102005032058B4 (de) HF-Filter mit verbesserter Gegenbandunterdrückung
DE69735746T2 (de) Akustische Oberflächenwellenanordnung
EP1196991B1 (fr) Filtre a ondes de surface de type filtre a reactance a suppression amelioree de la bande de frequences non transmises et procede d'optimisation de la suppression de la bande de frequences non transmises
DE102004037818B4 (de) Filteranordnung mit zwei Volumenwellenresonatoren
DE20221966U1 (de) Mit akustischen Wellen arbeitendes Bauelement mit einem Anpaßnetzwerk
WO2010023168A1 (fr) Duplexeur et procédé d'augmentation de l'isolation entre deux filtres
EP1488514A1 (fr) Filtre comportant des resonateurs couples de fa on acoustique
WO2006002720A1 (fr) Duplexeur
EP2891244A1 (fr) Multiplexeur à produits d'intermodulation réduits
DE102005051852B4 (de) SAW Filter mit breitbandiger Bandsperre
WO2017050750A1 (fr) Filtre à ondes de surface à mode de cisaillement éliminé
WO2012019904A1 (fr) Composant fonctionnant avec des ondes acoustiques et présentant une réponse en température réduite de la position en fréquence, et procédé de fabrication associé
DE102009034101A1 (de) Filterschaltung mit verbesserter Filtercharakteristik
WO2006005397A1 (fr) Filtre a fonctionnent symetrique des deux cotes pourvu de resonateurs a ondes de volume
DE102009031133B4 (de) Bulkakustikwellenfiltervorrichtungen und Verfahren zum Herstellen und Optimieren selbiger
DE102005010658A1 (de) Duplexer mit verbesserter Leistungsverträglichkeit
DE10325798B4 (de) SAW-Filter mit verbesserter Selektion oder Isolation
DE10057848B4 (de) Reaktanzfilter mit verbesserter Leistungsverträglichkeit
WO2008034429A1 (fr) Composant de filtre
WO2007033652A1 (fr) Composant ayant au moins un filtre fonctionnant avec des ondes acoustiques
DE102016106185A1 (de) Breitbandiges SAW-Filter
DE102016107309B3 (de) Multiplexer

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07817543

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 07817543

Country of ref document: EP

Kind code of ref document: A1