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WO2008033928A3 - Source plasma à onde de surface améliorée par faisceau électronique - Google Patents

Source plasma à onde de surface améliorée par faisceau électronique Download PDF

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Publication number
WO2008033928A3
WO2008033928A3 PCT/US2007/078279 US2007078279W WO2008033928A3 WO 2008033928 A3 WO2008033928 A3 WO 2008033928A3 US 2007078279 W US2007078279 W US 2007078279W WO 2008033928 A3 WO2008033928 A3 WO 2008033928A3
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
surface wave
wave plasma
plasma source
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/078279
Other languages
English (en)
Other versions
WO2008033928A2 (fr
Inventor
Lee Chen
Paul Moroz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/518,885 external-priority patent/US7938081B2/en
Priority claimed from US11/518,884 external-priority patent/US7998307B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2008033928A2 publication Critical patent/WO2008033928A2/fr
Publication of WO2008033928A3 publication Critical patent/WO2008033928A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Waveguide Aerials (AREA)
  • Plasma Technology (AREA)

Abstract

La présente invention concerne un système de traitement plasma pour générer du plasma au moyen d'un faisceau électronique balistique utilisant une source plasma à onde de surface (SWP), telle qu'une antenne à fentes à ligne radiale (RLSA), au cours de la fabrication de dispositifs à semi-conducteur. L'antenne comprend une plaque de résonateur dotée d'une couche électriquement conductrice partiellement ouverte couplée à une surface de la plaque de résonateur. Par exemple, la couche électriquement conductrice est formée à une interface entre la plaque de résonateur et le plasma.
PCT/US2007/078279 2006-09-12 2007-09-12 Source plasma à onde de surface améliorée par faisceau électronique Ceased WO2008033928A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/518,885 2006-09-12
US11/518,885 US7938081B2 (en) 2006-09-12 2006-09-12 Radial line slot antenna having a conductive layer
US11/518,884 US7998307B2 (en) 2006-09-12 2006-09-12 Electron beam enhanced surface wave plasma source
US11/518,884 2006-09-12

Publications (2)

Publication Number Publication Date
WO2008033928A2 WO2008033928A2 (fr) 2008-03-20
WO2008033928A3 true WO2008033928A3 (fr) 2008-07-17

Family

ID=39184553

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/078279 Ceased WO2008033928A2 (fr) 2006-09-12 2007-09-12 Source plasma à onde de surface améliorée par faisceau électronique

Country Status (1)

Country Link
WO (1) WO2008033928A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10147655B2 (en) 2016-03-22 2018-12-04 Tokyo Electron Limited System and method for temperature control in plasma processing system
CN108735567B (zh) * 2017-04-20 2019-11-29 北京北方华创微电子装备有限公司 表面波等离子体加工设备
WO2023279088A1 (fr) * 2021-07-02 2023-01-05 University Of Washington Pompage électronique de chaleur sans courant de charge

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060071607A1 (en) * 2004-09-30 2006-04-06 Tokyo Electron Limited Surface wave plasma processing system and method of using

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060071607A1 (en) * 2004-09-30 2006-04-06 Tokyo Electron Limited Surface wave plasma processing system and method of using

Also Published As

Publication number Publication date
WO2008033928A2 (fr) 2008-03-20

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