[go: up one dir, main page]

TW200802596A - Plasma processing method and plasma processing apparatus - Google Patents

Plasma processing method and plasma processing apparatus

Info

Publication number
TW200802596A
TW200802596A TW096111085A TW96111085A TW200802596A TW 200802596 A TW200802596 A TW 200802596A TW 096111085 A TW096111085 A TW 096111085A TW 96111085 A TW96111085 A TW 96111085A TW 200802596 A TW200802596 A TW 200802596A
Authority
TW
Taiwan
Prior art keywords
electrode
processing
plasma processing
plasma
processing vessel
Prior art date
Application number
TW096111085A
Other languages
Chinese (zh)
Other versions
TWI447804B (en
Inventor
Naoki Matsumoto
Chishio Koshimizu
Manabu Iwata
Satoshi Tanaka
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200802596A publication Critical patent/TW200802596A/en
Application granted granted Critical
Publication of TWI447804B publication Critical patent/TWI447804B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.
TW096111085A 2006-03-30 2007-03-29 A plasma processing method and a plasma processing apparatus TWI447804B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006092939A JP5116983B2 (en) 2006-03-30 2006-03-30 Plasma processing method and plasma processing apparatus

Publications (2)

Publication Number Publication Date
TW200802596A true TW200802596A (en) 2008-01-01
TWI447804B TWI447804B (en) 2014-08-01

Family

ID=38639188

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111085A TWI447804B (en) 2006-03-30 2007-03-29 A plasma processing method and a plasma processing apparatus

Country Status (4)

Country Link
JP (1) JP5116983B2 (en)
KR (1) KR100883231B1 (en)
CN (4) CN101667533B (en)
TW (1) TWI447804B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI793196B (en) * 2017-10-19 2023-02-21 日商東京威力科創股份有限公司 Processing device

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5223377B2 (en) * 2008-02-29 2013-06-26 東京エレクトロン株式会社 Electrode for plasma processing apparatus, plasma processing apparatus and plasma processing method
JP5563860B2 (en) * 2010-03-26 2014-07-30 東京エレクトロン株式会社 Substrate processing method
WO2013137414A1 (en) * 2012-03-16 2013-09-19 株式会社クリエイティブ テクノロジー Electrostatic chuck device and method for producing same
KR101842124B1 (en) 2016-05-27 2018-03-27 세메스 주식회사 Support unit, Apparatus and method for treating a substrate
CN108206153B (en) * 2016-12-16 2021-02-09 台湾积体电路制造股份有限公司 Wafer bearing device and semiconductor equipment
US10553404B2 (en) * 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
JP6937644B2 (en) * 2017-09-26 2021-09-22 東京エレクトロン株式会社 Plasma processing equipment and plasma processing method
CN112309807B (en) * 2019-08-02 2022-12-30 中微半导体设备(上海)股份有限公司 Plasma etching equipment
JP2021038452A (en) * 2019-09-05 2021-03-11 東京エレクトロン株式会社 Plasma treatment apparatus and control method
JP7325294B2 (en) * 2019-10-17 2023-08-14 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
WO2021157750A1 (en) * 2020-02-03 2021-08-12 (주)제이디 Capacitance-type state measuring device using sensor-mounted wafer
CN114256046B (en) * 2020-09-22 2024-07-05 中微半导体设备(上海)股份有限公司 Plasma processing device and operating method thereof
CN114695042B (en) * 2020-12-28 2025-02-14 中微半导体设备(上海)股份有限公司 Radio frequency adjustment device, plasma processing equipment and radio frequency electric field adjustment method
CN118737797B (en) * 2024-06-21 2025-07-25 北京北方华创微电子装备有限公司 Upper electrode structure and semiconductor process equipment

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251792B1 (en) * 1990-07-31 2001-06-26 Applied Materials, Inc. Plasma etch processes
US6518195B1 (en) * 1991-06-27 2003-02-11 Applied Materials, Inc. Plasma reactor using inductive RF coupling, and processes
US5494522A (en) * 1993-03-17 1996-02-27 Tokyo Electron Limited Plasma process system and method
JP4493756B2 (en) * 1999-08-20 2010-06-30 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
TW449654B (en) * 1999-08-25 2001-08-11 Fujitsu General Ltd Air conditioner
JP4819244B2 (en) * 2001-05-15 2011-11-24 東京エレクトロン株式会社 Plasma processing equipment
JP4584565B2 (en) * 2002-11-26 2010-11-24 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP2004235105A (en) * 2003-01-31 2004-08-19 Matsushita Electric Works Ltd Plasma processing apparatus and plasma processing method
JP4388287B2 (en) * 2003-02-12 2009-12-24 東京エレクトロン株式会社 Plasma processing apparatus and high-frequency power supply apparatus
JP2004305918A (en) * 2003-04-07 2004-11-04 Sekisui Chem Co Ltd Plasma processing method and plasma processing apparatus used for the same
JP2005332670A (en) * 2004-05-19 2005-12-02 Sekisui Chem Co Ltd Normal pressure plasma surface treatment equipment
US20060037704A1 (en) * 2004-07-30 2006-02-23 Tokyo Electron Limited Plasma Processing apparatus and method
CN1734712A (en) * 2004-07-30 2006-02-15 东京毅力科创株式会社 Plasma processing device and plasma processing method
JP4699127B2 (en) * 2004-07-30 2011-06-08 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI793196B (en) * 2017-10-19 2023-02-21 日商東京威力科創股份有限公司 Processing device

Also Published As

Publication number Publication date
JP2007266534A (en) 2007-10-11
CN101047112A (en) 2007-10-03
CN100565790C (en) 2009-12-02
KR20070098588A (en) 2007-10-05
CN101667534B (en) 2011-07-27
KR100883231B1 (en) 2009-02-10
CN101667534A (en) 2010-03-10
TWI447804B (en) 2014-08-01
CN101667532B (en) 2011-07-27
JP5116983B2 (en) 2013-01-09
CN101667532A (en) 2010-03-10
CN101667533A (en) 2010-03-10
CN101667533B (en) 2011-06-15

Similar Documents

Publication Publication Date Title
TW200802596A (en) Plasma processing method and plasma processing apparatus
TW200802597A (en) Plasma processing apparatus and plasma processing method
TW200802598A (en) Plasma processing apparatus and plasma processing method
WO2009006072A3 (en) Methods and arrangements for plasma processing system with tunable capacitance
TWI267138B (en) Plasma processing apparatus and plasma processing method
JP2006041539A5 (en)
CN102017056B (en) Plasma processing apparatus and method for the plasma processing of substrates
TW200943413A (en) Plasma processing apparatus
TW200614368A (en) Plasma processing device amd method
WO2006026110A3 (en) Yttria insulator ring for use inside a plasma chamber
TW200739719A (en) Plasma etching method and computer-readable storage medium
TW200509194A (en) Plasma chamber having multiple RF source frequencies
WO2010117970A3 (en) Multifrequency capacitively coupled plasma etch chamber
WO2010122459A3 (en) Method and apparatus for high aspect ratio dielectric etch
ATE430376T1 (en) PLASMA REACTOR FOR THE TREATMENT OF LARGE-AREA SUBSTRATES
TW200504870A (en) Rf pulsing of a narrow gap capacitively coupled reactor
TW200721302A (en) Apparatus and methods to remove films on bevel edge and backside of wafer
SG179482A1 (en) Edge electrodes with dielectric covers
TW201130037A (en) Radio frequency (RF) ground return arrangements
WO2008005756A3 (en) Apparatus for substrate processing and methods therefor
WO2010091205A3 (en) Ground return for plasma processes
TW200644118A (en) Plasma processor
TW200644117A (en) Plasma processing apparatus and plasma processing method
TW200509247A (en) Surface wave plasma treatment apparatus using multi-slot antenna
TW200608541A (en) Method and apparatus for dechucking a substrate