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WO2008032570A1 - procédé de formation de film mince et appareil de formation de film mince - Google Patents

procédé de formation de film mince et appareil de formation de film mince Download PDF

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Publication number
WO2008032570A1
WO2008032570A1 PCT/JP2007/066745 JP2007066745W WO2008032570A1 WO 2008032570 A1 WO2008032570 A1 WO 2008032570A1 JP 2007066745 W JP2007066745 W JP 2007066745W WO 2008032570 A1 WO2008032570 A1 WO 2008032570A1
Authority
WO
WIPO (PCT)
Prior art keywords
output
thin film
power source
film forming
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/066745
Other languages
English (en)
Japanese (ja)
Inventor
Motoshi Kobayashi
Takashi Komatsu
Kyuzo Nakamura
Yoshikuni Horishita
Hidenori Yoda
Shigemitsu Satou
Toshio Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to CN2007800328264A priority Critical patent/CN101512038B/zh
Publication of WO2008032570A1 publication Critical patent/WO2008032570A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Definitions

  • Thin film forming method and thin film forming apparatus Thin film forming apparatus
  • the present invention relates to a thin film forming method such as sputtering and a thin film forming apparatus, and in particular, a thin film forming method for forming a thin film on a substrate to be processed having a large area by arranging a plurality of target pairs in a vacuum chamber.
  • the present invention relates to a thin film forming apparatus having an AC power supply.
  • a plurality of target pairs are arranged in parallel facing the substrate to be processed in a vacuum chamber, and an AC power source connected to each target pair is connected.
  • An alternating voltage is applied alternately at a predetermined frequency, and the two targets constituting each target pair are alternately switched between an anode electrode and a force sword electrode.
  • Patent Document 1 WO2003 / 014410 (Claims 1 and 2)
  • the present invention provides a stable plasma atmosphere that suppresses fluctuations in glow discharge caused by an output potential difference between adjacent targets connected to different AC power sources. It is possible to perform the thin film formation method and the thin film formation method capable of suppressing the generation of the large arc energy and minimizing the damage caused by the arc discharge even when the arc discharge occurs. It is an object to provide a thin film forming apparatus.
  • a thin film forming method includes a plurality of target pairs arranged in parallel in a vacuum chamber so as to face a substrate to be processed, and via an AC power supply connected to each target pair.
  • the AC voltage is alternately output at a predetermined frequency and an alternating voltage is output.
  • the two targets constituting each target pair are alternately switched between the anode electrode and the force sword electrode, and between the anode electrode and the force sword electrode.
  • a thin film forming method in which a glow discharge is generated to form a plasma atmosphere, and each target pair is sputtered to form a thin film on the substrate to be processed. Compare the outputs between adjacent targets connected to different AC power sources in the parallel target pairs, and adjust the output of the AC power source when the output potential difference exceeds a predetermined value. The output potential difference is converged below the predetermined value.
  • the output potential difference between the targets adjacent to each other can be converged and adjusted, so that a stable plasma atmosphere can be formed, and even when abnormal discharge occurs, a large arc It becomes possible to suppress the generation of energy.
  • the adjustment of the output may be performed by converging the output potential difference by inverting the polarity by shifting the output phase between the mutually adjacent targets by 180 degrees.
  • the order of adjusting the output is, for example, by sequentially adjusting the output of each AC power source from any one AC power source as the starting point toward the outside in the parallel arrangement direction! /.
  • each AC power source that is sequentially adjacent to the outside in the juxtaposed direction with the adjusted AC power source as a further starting point May be adjusted.
  • the output adjustment may be performed by generating a signal for controlling the output of the AC power source and transmitting this signal to the AC power source for adjusting the output.
  • the control signal may be generated by the AC power source that is the starting point, and may be transmitted from the AC power source that is the starting point to the AC power source that adjusts the output.
  • a thin film forming apparatus has a plurality of target pairs arranged in parallel so as to face a substrate to be processed disposed in a vacuum chamber, and connected to each target pair.
  • the adjustment unit may include a signal generation unit that generates a signal for controlling the output, and a transmission unit that transmits the signal to an AC power source that adjusts the output.
  • the AC power source that is the starting point for performing the adjustment processing may be configured to have the adjustment processing means.
  • a control device including the adjusting means may be provided in the thin film forming apparatus.
  • arc detection means for detecting the arc discharge, and when the arc discharge is detected by the arc detection means, the target is detected. It may have an output control means for controlling the output of each AC power source in order to cut off the output to the pair and simultaneously cut off the output to the other target pairs.
  • the thin film forming method and thin film forming apparatus according to the present invention are connected to different AC power sources among a plurality of target pairs arranged side by side, adjacent to each other, It is possible to prevent the output potential difference between the targets that are coupled through the capacitance, so that a stable plasma state can be maintained and arc discharge can be effectively suppressed. There is an effect that a good thin film can be formed.
  • FIG. 1 shows a basic configuration diagram of a thin film forming apparatus according to the present invention.
  • This thin film forming apparatus forms a thin film on a substrate having a large area by arranging a plurality of target pairs in parallel.
  • the number of target pairs arranged side by side is a force determined according to the area of the substrate to be processed.
  • two target pairs are used for convenience of explanation.
  • reference numeral 1 denotes a vacuum chamber of a thin film forming apparatus according to the present invention.
  • Vacuum Yamba 1 maintains a predetermined degree of vacuum through vacuum evacuation means 2 such as a rotary pump or a turbo molecular pump.
  • a substrate transfer means 3 such as a carrier is provided in the upper part of the vacuum chamber 1, and the substrate to be processed S is sequentially transferred by intermittently driving a drive means (not shown).
  • sputtering gas such as Ar, O, HO, H, N
  • a reaction gas such as 2 2 2 is introduced at a constant flow rate.
  • a target pair T1 and a target pair T2 are arranged in parallel so as to face the substrate S to be processed in the vacuum chamber 1.
  • An AC power supply E1 is connected to the target pair T1, and an AC power supply E2 is connected to the target pair T2.
  • the AC power supply E1 and the AC power supply E2 are communicatively connected via a communication cable K! /.
  • the two targets ti l and tl2 constituting the target pair T1 and the two targets t21 and t22 constituting the T2 are alternately changed in polarity at a predetermined frequency via the AC power supplies El and E2.
  • AC voltage is output, and the anode electrode and the force sword electrode are alternately switched.
  • a glow discharge is generated between the anode electrode and the force sword electrode to form a plasma atmosphere P, and a thin film is formed on the substrate S to be processed by sputtering the target pair T1 and the target pair T2.
  • FIG. 1 shows a case where the target til side of the target pair T1 is an anode electrode, the tl2 side is a force sword electrode, the target t21 side of the target pair T2 is an anode electrode, and the t22 side is a force sword electrode.
  • the output waveforms of AC power supply El and AC power supply E2 at this time are listed under each AC power supply.
  • the target tl2 of the target pair T1 and the target t21 of the target pair T2 are coupled via a stray capacitance.
  • FIG. 2 shows a basic circuit configuration diagram of the AC power supply E1 described in FIG. Figure
  • the AC power supply E1 includes a power supply unit 10 that can supply power and an oscillation unit 20 that alternately changes polarity at a predetermined frequency and outputs a voltage to the target pair T1.
  • the power supply unit 10 includes a first CPU circuit 101 that controls its operation, a commercial AC power source (
  • It has an input unit 102 to which three-phase AC200V) is input and six diodes 103 that rectify the input AC power and convert it to DC power, and can be directly connected via DC power lines 104a and 104b. It plays the role of outputting the flowing power to the oscillator 20.
  • the power supply unit 10 is connected to the switching transistor 105 provided between the DC power lines 104a and 104b and the first CPU circuit 101 so as to be communicable, and the switching transistor 105 is turned on / off.
  • a first driver circuit 106a and a first PMW control circuit 106b for controlling the above are provided.
  • a detection circuit 107a and an AD conversion circuit 107b that have a current detection sensor and a voltage detection transformer and detect the current and voltage between the DC power lines 104a and 104b are provided, and are provided via the detection circuit 107a and the AD conversion circuit 107b.
  • the current and voltage signals are input to the CPU circuit 101.
  • the oscillation unit 20 includes a second CPU circuit 201 communicatively connected to the first CPU circuit 101, and an oscillation switch circuit 202 provided between the DC power lines 104a and 104b.
  • a second CPU circuit 201 communicatively connected to the first CPU circuit 101, and an oscillation switch circuit 202 provided between the DC power lines 104a and 104b.
  • Four first to fourth switching transistors 202a, 202b, 202c, 202d and a second CPU circuit 201 are communicably connected to control on / off of each switching transistor 202a, 202b, 202c, 202d
  • a second driver circuit 203a and a second PMW control circuit 203b are provided.
  • the second driver circuit 203a and the second PMW control circuit 203b for example, the first and fourth switching transistors 202a and 202d and the second and third switching transistors 202b and 202c If the operation of each switching transistor 202a, 202b, 202c, 202d is controlled so that the ON / OFF timing is reversed, a sinusoidal AC power supply is supplied via the AC power lines 204a, 204b from the oscillation switch circuit 202. Can output.
  • a detection circuit 205a and an AD conversion circuit 205b that detect an oscillation voltage and an oscillation current are provided, and the current and voltage signals are input to the second CPU circuit 201 via the detection circuit 205a and the conversion circuit 205b. It is like that.
  • AC power lines 204a and 204b are connected to an output transformer 206 having a known structure, and an output cable k from the output transformer 206 is connected to the target pair T1.
  • a detection circuit 207a and an AD conversion circuit 207b that have a current detection sensor and a voltage detection transformer and detect the output voltage and output current to the target pair T1 are provided, and the detection circuit 207a and the AD conversion circuit 207b are provided.
  • the output voltage and output current signals are input to the second CPU circuit 201. This ensures that during sputtering A constant voltage can be applied to the target pair Tl by alternately changing the polarity at a constant frequency via the current source El.
  • the output from the detection circuit 207a is connected to a detection circuit 208a that detects the output frequency and output phase of the output voltage and output current, and the output phase is connected to the detection circuit 208a so as to be communicable.
  • the phase and frequency of the output voltage and output current are input to the second CPU circuit 201 via the output frequency control circuit 208b.
  • the control signal from the second CPU circuit 201 controls the on / off of each switching transistor 202a, 202b, 202c, 202d of the oscillation switch circuit 202 by the second driver circuit 203a, and the output voltage and Control can be made so that the phases of the output currents substantially coincide with each other.
  • the substrate to be processed is transported to a position facing the target pair T1 by the substrate transporting means, and a predetermined sputtering gas is introduced through the gas introducing means.
  • An AC voltage is applied to the target pair T1 via the AC power supply E1, and each target constituting the target pair T1 is alternately switched between the anode electrode and the force sword electrode. Electricity is generated and a plasma atmosphere P is formed.
  • the target is accelerated and collides with one target which has become an ion force S force sword electrode in the plasma atmosphere P, and the target atoms are scattered to form a thin film on the surface of the substrate to be processed.
  • the oscillating unit 20 is provided with arc detecting means 209 for detecting a voltage drop in which the voltage drop time of the output voltage waveform to the target pair T1 is shorter than that during normal glow discharge. Further, when the arc detection means 209 detects the occurrence of arc discharge, the voltage drop output signal is output to the second CPU circuit 201 connected so as to be communicable, and the first CPU circuit capable of communicating with the second CPU circuit 201 is used. Output control that controls the operation of the switching transistor 105 by the first driver circuit 106a with the control signal from 101, controls the on / off of the first PMW control circuit 106b, and immediately shuts off the output to the target pair T1 Means were also provided.
  • the second driver circuit 203a uses a control signal from the second CPU circuit 201 to connect the AC power lines 204a and 204b to each other.
  • the operation of each switching transistor 202a, 202b, 202c, 202d of the oscillation switch circuit 202 is controlled so that the potential between them is the same, and the output to the target pair T1 is immediately shut off. .
  • the control signal received by the second CPU circuit 201 is transmitted to the oscillation unit of the adjacent AC power supply E2 via the communication cable K described in FIG. Send to the CPU circuit and cut off the output from the AC power supply E2 to the target pair T2 by the same process.
  • FIG. 3 shows the output adjustment between the target t12 and the target t21 connected to the AC power supply E1 and the AC power supply E2 described in FIG. 1 and the output adjustment by the thin film forming method according to the present invention. This is shown before and after the output adjustment.
  • Fig. 3 (a) shows a waveform before output adjustment by the thin film forming method according to the present invention.
  • the output potential difference between the target tl2 and the target t21 increases as the peak-to-peak voltage Vpp. If an abnormal discharge occurs in this state, a large arc energy is generated, causing a splash in which the target melts and huge droplets adhere to it, thereby inhibiting good thin film formation.
  • the AC power source E1 and the AC power source E2 output simultaneously, and the outputs of the AC power sources E1 and E2 are the same. Therefore, the output phase is almost the same between the target tl2 and the target t21. Invert.
  • FIG. 3 (b) shows a waveform after output adjustment by the thin film forming method according to the present invention.
  • the thin film forming method according to the present invention adjusts the output so as to converge the output potential difference between the AC power supply E1 and the AC power supply E2 in order to suppress the generation of the large arc energy as described above.
  • the output phase between the targets is shifted by 180 degrees. If the polarity is reversed, the waveforms of AC power supply E1 and AC power supply E2 overlap, and the output potential difference that causes arc discharge hardly occurs.
  • the method for converging the output potential difference is, for example, by first transmitting the output current and output voltage signal of the AC power supply E2 to the CPU circuit 201 of the AC power supply E1 via the communication cable K described in FIG. Compare with output current and output voltage signal of power supply E1. If the output potential difference between the two exceeds a predetermined value, a control signal for converging the output potential difference is sent from the CPU circuit 201 of the AC power supply E1 via the communication cable K to the second oscillation unit of the AC power supply E2. Send to CPU circuit. Based on the control signal received by the second CPU circuit, the operation of each switching transistor of the oscillation switch circuit is controlled via the output oscillation driver circuit and the PMW control circuit to adjust the output of the target pair T2. The output potential difference may be converged.
  • the predetermined value need not be converged until the output potential difference becomes 0V, as long as it is within the range of the output potential difference that does not cause abnormal discharge that causes generation of the arc energy. Specifically, it may be set at 10%, preferably 5%, of the 0-peak potential difference (or effective value) of each AC power supply.
  • the output potential difference is converged by adjusting the output of the AC power supply E2.
  • the output potential difference is adjusted by adjusting the output of the AC power supply E1 for the purpose of limitation.
  • the output potential difference may be converged by adjusting both the AC power source E1 and the AC power source E2.
  • the waveform of the AC power supplies E1 and E2 is a sine wave, but is not limited to this, and may be a square wave. Also, if the oscillation frequency of the AC power supply is fixed, change it just as well!
  • FIG. 4 and FIG. 5 are diagrams showing examples of specific embodiments of the sputtering apparatus that are effective in the present invention. In all the embodiments, the same reference numerals are used for the same components as those in FIG.
  • the target pair Tl, ⁇ 2, ⁇ 3, and ⁇ 4 are arranged in parallel to face the substrate S to be processed.
  • Target pair T1 is connected to AC power source E1
  • target pair ⁇ 2 is connected to AC power source ⁇ 2
  • target pair ⁇ 3 is connected to AC power source ⁇ 3
  • target pair ⁇ 4 is connected to AC power source ⁇ 3.
  • Each AC power supply El to E4 is connected via a communication cable K so as to be able to communicate.
  • the AC power supplies E1 to E4 have the same circuit configuration as the AC power supply E1 described in FIG.
  • the AC power supply E1 compares the outputs between the target tl2 and the target t21. If the output potential difference is equal to or greater than the predetermined value, the AC power supply E1 generates the control signal described in FIG. Via the AC power supply E2. Thereafter, the output between the target t22 and the target t31 and the output between the target t32 and the target t41 are sequentially compared. If the output potential difference is equal to or greater than the predetermined value, the control signal is generated and adjusted. Send this control signal to the power supply.
  • the AC power sources E2 to E2 connected to the target pairs T2 to T4 from the target pair T1 connected to the AC power source E1 toward the outside in the juxtaposed direction are arranged.
  • the output of E4 can be adjusted sequentially.
  • the output of the adjacent AC power supply E3 is adjusted using the AC power supply E2 as the master AC power supply.
  • the adjusted AC power supply E3 may be used as the master AC power supply, and the AC power supply E4 may be adjusted! /.
  • the master AC power source is the AC power source E1, but can be arbitrarily determined as long as it is not limited to the master AC power source E1.
  • the master AC power supply is changed to the AC power supply E3
  • the adjacent AC power supply becomes two pairs of the AC power supply E2 and the AC power supply E4, and the AC power supply E2 and E3 are adjusted before the AC power supply.
  • the power supply E1 will be adjusted.
  • FIG. 5 is a modification of the embodiment of FIG. 5, the same components as those in FIG. 4 are given the same numbers.
  • a control device U force S that is communicatively connected to each AC power source E1 to E4 via a communication cable K, a different AC power source instead of the master AC power source described in FIG.
  • the control signal is generated and the control signal is transmitted to the AC power source to be adjusted! / Is.
  • FIG. 1 is a basic configuration diagram of a thin film forming apparatus according to the present invention.
  • FIG. 3 a) A diagram showing waveforms before adjustment by the thin film forming method according to the present invention, b) A diagram showing waveforms after adjustment by the thin film forming method according to the present invention.
  • FIG. 4 is a view showing an embodiment of a thin film forming apparatus according to the present invention.
  • FIG. 5 is a view showing an embodiment of a thin film forming apparatus according to the present invention (modification).

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un procédé de formation de film mince et un appareil de formation de film mince permettant de réaliser un tel procédé de formation de film. Dans le procédé de formation de film, une pluralité de paires de cibles auxquelles une alimentation en courant alternatif est connectée sont aménagées en parallèle, et les sorties des cibles adjacentes connectées aux alimentations en courant alternatif différentes, parmi les paires de cibles disposées en parallèle, sont comparées. Lorsque la différence depotentiel de sortie dépasse une valeur prescrite, la sortie de l'alimentation alternative est ajustée et la différence de potentiel de sortie est réduite à la valeur prescrite ou moins.
PCT/JP2007/066745 2006-09-14 2007-08-29 procédé de formation de film mince et appareil de formation de film mince Ceased WO2008032570A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2007800328264A CN101512038B (zh) 2006-09-14 2007-08-29 薄膜形成方法及薄膜形成装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006249220A JP4436350B2 (ja) 2006-09-14 2006-09-14 薄膜形成方法及び薄膜形成装置
JP2006-249220 2006-09-14

Publications (1)

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WO2008032570A1 true WO2008032570A1 (fr) 2008-03-20

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JP (1) JP4436350B2 (fr)
KR (1) KR101068549B1 (fr)
CN (1) CN101512038B (fr)
TW (1) TWI403601B (fr)
WO (1) WO2008032570A1 (fr)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
WO2010044235A1 (fr) * 2008-10-16 2010-04-22 株式会社アルバック Appareil de pulvérisation cathodique, procédé de formation de film mince et procédé pour fabriquer un transistor à effet de champ
CN102334273A (zh) * 2009-03-02 2012-01-25 株式会社爱发科 溅镀装置用交流电源
WO2012108150A1 (fr) * 2011-02-08 2012-08-16 シャープ株式会社 Dispositif de pulvérisation à magnétron, procédé pour commander un dispositif de pulvérisation à magnétron, et procédé de formation de film
JP2012246572A (ja) * 2012-09-07 2012-12-13 Oerlikon Trading Ag Truebbach 被洗浄基板、あるいは、さらに処理される清潔な基板を製造するための、方法および装置

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JP5363166B2 (ja) * 2009-03-31 2013-12-11 株式会社アルバック スパッタリング方法
CN108601196A (zh) * 2018-04-29 2018-09-28 航天慧能（江苏）环境工程有限公司 基于物联网的新风系统的矩阵等离子装置
CN113727483B (zh) * 2021-09-02 2022-12-20 合肥爱普利等离子体有限责任公司 一种多电极交流电弧放电装置、设备及交流电源

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JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
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JP3586197B2 (ja) * 2000-03-23 2004-11-10 シャープ株式会社 薄膜形成用プラズマ成膜装置
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JPS6029467A (ja) * 1983-07-26 1985-02-14 Anelva Corp スパッタリング装置用電力供給装置
JPH02258976A (ja) * 1988-09-26 1990-10-19 Tokuda Seisakusho Ltd スパッタ装置
JPH02156080A (ja) * 1988-12-09 1990-06-15 Tokuda Seisakusho Ltd スパッタ装置
WO2003014410A1 (fr) * 2001-08-07 2003-02-20 Nippon Sheet Glass Co., Ltd. Dispositif de pulverisation
JP2003096561A (ja) * 2001-09-25 2003-04-03 Sharp Corp スパッタ装置
JP2003234200A (ja) * 2001-11-07 2003-08-22 Applied Films Gmbh & Co Kg プラズマインピーダンス調整デバイス

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KR20090034377A (ko) 2009-04-07
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KR101068549B1 (ko) 2011-09-30
TW200827466A (en) 2008-07-01
CN101512038B (zh) 2011-04-13
CN101512038A (zh) 2009-08-19
TWI403601B (zh) 2013-08-01

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