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WO2008001363A3 - Monolithic flash memory having integrated code and data memory portions - Google Patents

Monolithic flash memory having integrated code and data memory portions Download PDF

Info

Publication number
WO2008001363A3
WO2008001363A3 PCT/IL2007/000778 IL2007000778W WO2008001363A3 WO 2008001363 A3 WO2008001363 A3 WO 2008001363A3 IL 2007000778 W IL2007000778 W IL 2007000778W WO 2008001363 A3 WO2008001363 A3 WO 2008001363A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory portion
memory
data
fabricated
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IL2007/000778
Other languages
French (fr)
Other versions
WO2008001363A2 (en
Inventor
Rony Levy
Lior Kruh
Adir Raz
Shlomo Berkovitch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDR FLASHWARE Ltd
Original Assignee
KDR FLASHWARE Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KDR FLASHWARE Ltd filed Critical KDR FLASHWARE Ltd
Publication of WO2008001363A2 publication Critical patent/WO2008001363A2/en
Publication of WO2008001363A3 publication Critical patent/WO2008001363A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

A memory chip (10) includes a first memory portion (11) fabricated using charge trapping technology and configured using NAND memory cell array architecture and a second memory portion (12) fabricated using charge trapping technology and having mutually distinct first and second sets of addresses, respectively. A buffer memory portion (14) is coupled to the first memory portion for temporary storage of blocks of data that are written to or read from the first memory portion. Registers (18) store an instruction for controlling the first memory portion. A first interface (19) has a address bus for receiving an address within the first or second set of addresses and has a data bus for conveying data to and from the first memory portion or the second memory portion according to the address. All components are fabricated on a single die.
PCT/IL2007/000778 2006-06-27 2007-06-26 Monolithic flash memory having integrated code and data memory portions Ceased WO2008001363A2 (en)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US81659606P 2006-06-27 2006-06-27
US60/816,596 2006-06-27
US84340606P 2006-09-11 2006-09-11
US60/843,406 2006-09-11
US86205406P 2006-10-19 2006-10-19
US60/862,054 2006-10-19
US88716207P 2007-01-30 2007-01-30
US60/887,162 2007-01-30

Publications (2)

Publication Number Publication Date
WO2008001363A2 WO2008001363A2 (en) 2008-01-03
WO2008001363A3 true WO2008001363A3 (en) 2008-04-24

Family

ID=38561212

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2007/000778 Ceased WO2008001363A2 (en) 2006-06-27 2007-06-26 Monolithic flash memory having integrated code and data memory portions

Country Status (1)

Country Link
WO (1) WO2008001363A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9690650B2 (en) * 2013-03-11 2017-06-27 Macronix International Co., Ltd. Storage scheme for built-in ECC operations
US11640308B2 (en) * 2021-02-19 2023-05-02 Macronix International Co., Ltd. Serial NAND flash with XiP capability

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001084556A1 (en) * 2000-05-03 2001-11-08 Advanced Technology Materials, Inc. Electrically-eraseable programmable read-only memory having reduced-page-size program and erase
US20040027856A1 (en) * 2002-07-05 2004-02-12 Aplus Flash Technology, Inc. Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations
US20040071030A1 (en) * 2002-07-03 2004-04-15 Kabushiki Kaisha Toshiba Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001084556A1 (en) * 2000-05-03 2001-11-08 Advanced Technology Materials, Inc. Electrically-eraseable programmable read-only memory having reduced-page-size program and erase
US20040071030A1 (en) * 2002-07-03 2004-04-15 Kabushiki Kaisha Toshiba Semiconductor integrated circuits, fabrication method for the same and semiconductor integrated circuit systems
US20040027856A1 (en) * 2002-07-05 2004-02-12 Aplus Flash Technology, Inc. Combination nonvolatile memory using unified technology with byte, page and block write and simultaneous read and write operations

Also Published As

Publication number Publication date
WO2008001363A2 (en) 2008-01-03

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