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WO2008093450A1 - 研磨組成物用添加剤 - Google Patents

研磨組成物用添加剤 Download PDF

Info

Publication number
WO2008093450A1
WO2008093450A1 PCT/JP2007/068673 JP2007068673W WO2008093450A1 WO 2008093450 A1 WO2008093450 A1 WO 2008093450A1 JP 2007068673 W JP2007068673 W JP 2007068673W WO 2008093450 A1 WO2008093450 A1 WO 2008093450A1
Authority
WO
WIPO (PCT)
Prior art keywords
additive
amine compound
abrasive composition
alcohol
precipitation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/068673
Other languages
English (en)
French (fr)
Inventor
Masashi Teramoto
Ryoko Higashigaki
Hiroshi Makino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitta DuPont Inc
Original Assignee
Nitta Haas Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitta Haas Inc filed Critical Nitta Haas Inc
Priority to DE112007003303.7T priority Critical patent/DE112007003303B4/de
Priority to US12/449,242 priority patent/US8308972B2/en
Priority to KR1020097018116A priority patent/KR101390166B1/ko
Publication of WO2008093450A1 publication Critical patent/WO2008093450A1/ja
Anticipated expiration legal-status Critical
Priority to US13/442,125 priority patent/US8420539B2/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H10P90/129—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)

Abstract

　本発明は、安定した研磨特性を実現することができる研磨組成物用添加剤に関する。研磨組成物用添加剤は、１種または２種以上のアミン化合物と、アルコールとを含む。このアミン化合物には、第４級アンモニウム塩を含む。特にアミン化合物が高濃度で含まれる場合に、アルコールを含むことでアミン化合物の析出を抑えることができる。
PCT/JP2007/068673 2007-01-31 2007-09-26 研磨組成物用添加剤 Ceased WO2008093450A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112007003303.7T DE112007003303B4 (de) 2007-01-31 2007-09-26 Additiv für eine Zusammensetzung zum Polieren
US12/449,242 US8308972B2 (en) 2007-01-31 2007-09-26 Additive for polishing composition
KR1020097018116A KR101390166B1 (ko) 2007-01-31 2007-09-26 연마조성물용 첨가제
US13/442,125 US8420539B2 (en) 2007-01-31 2012-04-09 Additive for polishing composition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-022441 2007-01-31
JP2007022441A JP5357396B2 (ja) 2007-01-31 2007-01-31 研磨組成物用添加剤および研磨組成物の使用方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/449,242 A-371-Of-International US8308972B2 (en) 2007-01-31 2007-09-26 Additive for polishing composition
US13/442,125 Continuation US8420539B2 (en) 2007-01-31 2012-04-09 Additive for polishing composition

Publications (1)

Publication Number Publication Date
WO2008093450A1 true WO2008093450A1 (ja) 2008-08-07

Family

ID=39673766

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/068673 Ceased WO2008093450A1 (ja) 2007-01-31 2007-09-26 研磨組成物用添加剤

Country Status (8)

Country Link
US (2) US8308972B2 (ja)
JP (1) JP5357396B2 (ja)
KR (1) KR101390166B1 (ja)
CN (2) CN101632157A (ja)
DE (1) DE112007003303B4 (ja)
SG (1) SG179405A1 (ja)
TW (1) TWI412581B (ja)
WO (1) WO2008093450A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022138103A1 (ja) * 2020-12-22 2022-06-30 株式会社フジミインコーポレーテッド 研磨用組成物

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017524B2 (en) * 2008-05-23 2011-09-13 Cabot Microelectronics Corporation Stable, high rate silicon slurry
TWI385244B (zh) * 2009-05-20 2013-02-11 Epoch Material Co Ltd 用於移除鋸痕之化學機械研磨組合物
WO2012005142A1 (ja) * 2010-07-09 2012-01-12 旭硝子株式会社 研磨剤および研磨方法
SG189534A1 (en) * 2010-11-08 2013-06-28 Fujimi Inc Composition for polishing and method of polishing semiconductor substrate using same
KR20140109392A (ko) * 2011-12-27 2014-09-15 아사히 가라스 가부시키가이샤 연마제용 첨가제 및 연마 방법
US9150759B2 (en) * 2013-09-27 2015-10-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing composition for polishing silicon wafers and related methods
JP6250454B2 (ja) * 2014-03-27 2017-12-20 株式会社フジミインコーポレーテッド シリコン材料研磨用組成物
CN112480928A (zh) * 2019-09-11 2021-03-12 利绅科技股份有限公司 硅蚀刻组成物及其作用于硅基材的蚀刻方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02257627A (ja) * 1989-03-30 1990-10-18 Kyushu Electron Metal Co Ltd 半導体ウエーハの研磨方法及び装置
JPH07100738A (ja) * 1993-10-01 1995-04-18 Sumitomo Sitix Corp 半導体基板の鏡面研磨方法
JP2002075929A (ja) * 2000-08-24 2002-03-15 Nippon Chem Ind Co Ltd 研磨使用済み液の再生方法
JP2004335722A (ja) * 2003-05-07 2004-11-25 Rodel Nitta Co 半導体ウェハ研磨用組成物

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10172935A (ja) * 1996-12-05 1998-06-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
JPH11277380A (ja) * 1998-03-26 1999-10-12 Asahi Denka Kogyo Kk 半導体製品の表面研磨システム
US6024829A (en) * 1998-05-21 2000-02-15 Lucent Technologies Inc. Method of reducing agglomerate particles in a polishing slurry
JP2000071172A (ja) * 1998-08-28 2000-03-07 Nec Corp 化学機械研磨用スラリーの再生装置及び再生方法
US6362103B1 (en) * 2000-01-18 2002-03-26 David K. Watts Method and apparatus for rejuvenating a CMP chemical solution
US6461958B1 (en) * 2000-02-04 2002-10-08 Seagate Technology Llc Polishing memory disk substrates with reclaim slurry
JP2002252189A (ja) 2001-02-26 2002-09-06 Mitsubishi Materials Silicon Corp 半導体ウェーハ用研磨液
JP4212861B2 (ja) * 2002-09-30 2009-01-21 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法
JP2005349507A (ja) * 2004-06-09 2005-12-22 Naoetsu Electronics Co Ltd クーラント再生装置及び廃スラリー再生システム、並びに、廃クーラントの再生方法及び廃スラリーの再生方法
JP4551167B2 (ja) * 2004-09-14 2010-09-22 日本化学工業株式会社 半導体ウェーハの研磨装置及びこれを用いた研磨方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02257627A (ja) * 1989-03-30 1990-10-18 Kyushu Electron Metal Co Ltd 半導体ウエーハの研磨方法及び装置
JPH07100738A (ja) * 1993-10-01 1995-04-18 Sumitomo Sitix Corp 半導体基板の鏡面研磨方法
JP2002075929A (ja) * 2000-08-24 2002-03-15 Nippon Chem Ind Co Ltd 研磨使用済み液の再生方法
JP2004335722A (ja) * 2003-05-07 2004-11-25 Rodel Nitta Co 半導体ウェハ研磨用組成物

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022138103A1 (ja) * 2020-12-22 2022-06-30 株式会社フジミインコーポレーテッド 研磨用組成物
JP2022098711A (ja) * 2020-12-22 2022-07-04 株式会社フジミインコーポレーテッド 研磨用組成物
JP7602366B2 (ja) 2020-12-22 2024-12-18 株式会社フジミインコーポレーテッド 研磨用組成物

Also Published As

Publication number Publication date
CN101632157A (zh) 2010-01-20
DE112007003303B4 (de) 2016-05-19
DE112007003303T5 (de) 2009-12-03
US8420539B2 (en) 2013-04-16
JP5357396B2 (ja) 2013-12-04
KR20090128399A (ko) 2009-12-15
TW200837180A (en) 2008-09-16
KR101390166B1 (ko) 2014-04-29
US8308972B2 (en) 2012-11-13
TWI412581B (zh) 2013-10-21
US20120193573A1 (en) 2012-08-02
SG179405A1 (en) 2012-04-27
CN104531063A (zh) 2015-04-22
JP2008192656A (ja) 2008-08-21
US20100025623A1 (en) 2010-02-04

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