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WO2008090969A1 - 有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ - Google Patents

有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ Download PDF

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Publication number
WO2008090969A1
WO2008090969A1 PCT/JP2008/051032 JP2008051032W WO2008090969A1 WO 2008090969 A1 WO2008090969 A1 WO 2008090969A1 JP 2008051032 W JP2008051032 W JP 2008051032W WO 2008090969 A1 WO2008090969 A1 WO 2008090969A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic
transistor
field effect
semiconductor composite
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/051032
Other languages
English (en)
French (fr)
Inventor
Seiichiro Murase
Yukari Jo
Jun Tsukamoto
Junji Mata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toray Industries Inc
Original Assignee
Toray Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toray Industries Inc filed Critical Toray Industries Inc
Priority to EP08703859.2A priority Critical patent/EP2109162B1/en
Priority to US12/524,714 priority patent/US8441002B2/en
Priority to JP2008510938A priority patent/JP5515290B2/ja
Priority to CN2008800031799A priority patent/CN101589482B/zh
Priority to KR1020097016665A priority patent/KR101415365B1/ko
Publication of WO2008090969A1 publication Critical patent/WO2008090969A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • H10P10/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

　特定のチオフェン化合物とカーボンナノチューブを含有する有機半導体コンポジットにより、インクジェットなどの塗布プロセスで製膜可能であって、高い電荷移動度を有し、大気中においても高いオンオフ比を維持することができる有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタを提供する。
PCT/JP2008/051032 2007-01-26 2008-01-25 有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ Ceased WO2008090969A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP08703859.2A EP2109162B1 (en) 2007-01-26 2008-01-25 Organic semiconductor composite, organic transistor material and organic field effect transistor
US12/524,714 US8441002B2 (en) 2007-01-26 2008-01-25 Organic semiconductor composite, organic transistor material and organic field effect transistor
JP2008510938A JP5515290B2 (ja) 2007-01-26 2008-01-25 有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ
CN2008800031799A CN101589482B (zh) 2007-01-26 2008-01-25 有机半导体复合材料、有机晶体管材料以及有机场效应晶体管
KR1020097016665A KR101415365B1 (ko) 2007-01-26 2008-01-25 유기 반도체 콤포지트, 유기 트랜지스터 재료 및 유기 전계 효과형 트랜지스터

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2007-016228 2007-01-26
JP2007016228 2007-01-26
JP2007126371 2007-05-11
JP2007-126371 2007-05-11
JP2007186680 2007-07-18
JP2007-186681 2007-07-18
JP2007186681 2007-07-18
JP2007-186680 2007-07-18

Publications (1)

Publication Number Publication Date
WO2008090969A1 true WO2008090969A1 (ja) 2008-07-31

Family

ID=39644543

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051032 Ceased WO2008090969A1 (ja) 2007-01-26 2008-01-25 有機半導体コンポジット、有機トランジスタ材料ならびに有機電界効果型トランジスタ

Country Status (7)

Country Link
US (1) US8441002B2 (ja)
EP (1) EP2109162B1 (ja)
JP (1) JP5515290B2 (ja)
KR (1) KR101415365B1 (ja)
CN (1) CN101589482B (ja)
TW (1) TWI428331B (ja)
WO (1) WO2008090969A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225974A (ja) * 2009-03-25 2010-10-07 Toray Ind Inc 有機半導体コンポジットおよびそれを用いた有機電界効果型トランジスタ
KR101052357B1 (ko) * 2009-01-22 2011-07-27 한국화학연구원 신규한 폴리티오펜 유도체 및 이를 이용한 유기박막트랜지스터
JP2012049172A (ja) * 2010-08-24 2012-03-08 Seiko Epson Corp 成膜用インク、成膜方法、液滴吐出装置、発光素子の製造方法、発光素子、発光装置および電子機器
US8956740B2 (en) 2010-08-24 2015-02-17 Seiko Epson Corporation Film-forming ink, film-forming method, liquid droplet discharging device, method for preparing light-emitting element, light-emitting element, light-emitting device and electronic apparatus
KR20160001895A (ko) 2014-06-27 2016-01-07 동국대학교 산학협력단 탄소나노튜브 유기반도체, 이를 포함한 박막트랜지스터, 이를 이용한 화학센서 및 어플리케이션

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GB2428135B (en) * 2005-07-07 2010-04-21 Univ Surrey Improvements in thin film production
CN102459398B (zh) * 2009-06-05 2014-07-09 巴斯夫欧洲公司 稠合的联噻吩-亚乙烯基共聚物
US8445893B2 (en) * 2009-07-21 2013-05-21 Trustees Of Columbia University In The City Of New York High-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes
US8164089B2 (en) * 2009-10-08 2012-04-24 Xerox Corporation Electronic device
CN102666549A (zh) * 2009-12-14 2012-09-12 出光兴产株式会社 多环稠环化合物以及使用该多环稠环化合物的有机薄膜晶体管
FR2959353A1 (fr) * 2010-04-22 2011-10-28 Commissariat Energie Atomique Dispositif electronique organique comprenant une couche favorisant la segregation verticale d'un materiau carbone present dans la couche active electriquement
US9257509B2 (en) 2010-12-21 2016-02-09 The Trustees Of Columbia University In The City Of New York Electrical devices with graphene on boron nitride
KR101835005B1 (ko) 2011-04-08 2018-03-07 삼성전자주식회사 반도체소자 및 그 제조방법
US9214258B2 (en) * 2012-12-06 2015-12-15 Xerox Corporation Semiconductor composites comprising carbon nanotubes and diketopyrrolopyrrole-thiophene based copolymers
CN103325943A (zh) * 2013-05-16 2013-09-25 京东方科技集团股份有限公司 一种有机薄膜晶体管及其制备方法
JP6082927B2 (ja) * 2014-03-26 2017-02-22 富士フイルム株式会社 有機トランジスタ、化合物、非発光性有機半導体デバイス用有機半導体材料、有機トランジスタ用材料、非発光性有機半導体デバイス用塗布液、有機トランジスタの製造方法、有機半導体膜の製造方法、非発光性有機半導体デバイス用有機半導体膜、有機半導体材料の合成方法
KR20180105166A (ko) * 2016-01-25 2018-09-27 도레이 카부시키가이샤 n형 반도체 소자와 상보형 반도체 장치 및 그의 제조 방법 그리고 그것을 사용한 무선 통신 장치
US20190203139A1 (en) * 2017-12-28 2019-07-04 Exxonmobil Research And Engineering Company Friction and wear reduction using liquid crystal base stocks
JP6683296B1 (ja) * 2018-09-25 2020-04-15 東レ株式会社 カーボンナノチューブ複合体およびそれを用いた分散液、半導体素子およびその製造方法、ならびに半導体素子を用いた無線通信装置および商品タグ

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JPH09241356A (ja) 1996-03-08 1997-09-16 Fuji Electric Co Ltd 有機分子配向薄膜とその製造方法
WO2003089515A1 (en) * 2002-04-22 2003-10-30 Konica Minolta Holdings, Inc. Organic semiconductor composition, organic semiconductor element, and process for producing the same
JP2005268582A (ja) * 2004-03-19 2005-09-29 Toray Ind Inc 重合体コンポジット
JP2005268550A (ja) * 2004-03-18 2005-09-29 Japan Science & Technology Agency 有機半導体及びそれを用いた半導体装置並びにそれらの製造方法
JP2006024908A (ja) 2004-06-10 2006-01-26 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機薄膜トランジスタ、有機半導体膜の製造方法及び有機薄膜トランジスタの製造方法
JP2006093699A (ja) 2004-09-22 2006-04-06 Lucent Technol Inc 有機半導体組成物
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JP2006265534A (ja) 2005-02-22 2006-10-05 Toray Ind Inc 重合体コンポジット

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JPH09241356A (ja) 1996-03-08 1997-09-16 Fuji Electric Co Ltd 有機分子配向薄膜とその製造方法
WO2003089515A1 (en) * 2002-04-22 2003-10-30 Konica Minolta Holdings, Inc. Organic semiconductor composition, organic semiconductor element, and process for producing the same
EP1679752A1 (en) 2003-10-30 2006-07-12 Matsushita Electric Industrial Co., Ltd. Conductive thin film and thin-film transistor
JP2005268550A (ja) * 2004-03-18 2005-09-29 Japan Science & Technology Agency 有機半導体及びそれを用いた半導体装置並びにそれらの製造方法
JP2005268582A (ja) * 2004-03-19 2005-09-29 Toray Ind Inc 重合体コンポジット
JP2006024908A (ja) 2004-06-10 2006-01-26 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機薄膜トランジスタ、有機半導体膜の製造方法及び有機薄膜トランジスタの製造方法
JP2006093699A (ja) 2004-09-22 2006-04-06 Lucent Technol Inc 有機半導体組成物
WO2006038459A1 (ja) * 2004-10-01 2006-04-13 Konica Minolta Holdings, Inc. 有機薄膜トランジスタ材料、有機薄膜トランジスタ、電界効果トランジスタ及びスイッチング素子
JP2006128601A (ja) 2004-10-01 2006-05-18 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101052357B1 (ko) * 2009-01-22 2011-07-27 한국화학연구원 신규한 폴리티오펜 유도체 및 이를 이용한 유기박막트랜지스터
JP2010225974A (ja) * 2009-03-25 2010-10-07 Toray Ind Inc 有機半導体コンポジットおよびそれを用いた有機電界効果型トランジスタ
JP2012049172A (ja) * 2010-08-24 2012-03-08 Seiko Epson Corp 成膜用インク、成膜方法、液滴吐出装置、発光素子の製造方法、発光素子、発光装置および電子機器
US8956740B2 (en) 2010-08-24 2015-02-17 Seiko Epson Corporation Film-forming ink, film-forming method, liquid droplet discharging device, method for preparing light-emitting element, light-emitting element, light-emitting device and electronic apparatus
KR101899914B1 (ko) 2010-08-24 2018-09-18 세이코 엡슨 가부시키가이샤 성막용 잉크, 성막 방법, 액적 토출 장치, 발광 소자의 제조 방법, 발광 소자, 발광 장치 및 전자 기기
KR20160001895A (ko) 2014-06-27 2016-01-07 동국대학교 산학협력단 탄소나노튜브 유기반도체, 이를 포함한 박막트랜지스터, 이를 이용한 화학센서 및 어플리케이션

Also Published As

Publication number Publication date
US20100102299A1 (en) 2010-04-29
EP2109162A1 (en) 2009-10-14
TWI428331B (zh) 2014-03-01
TW200838857A (en) 2008-10-01
JP5515290B2 (ja) 2014-06-11
EP2109162B1 (en) 2013-05-01
KR20090113285A (ko) 2009-10-29
JPWO2008090969A1 (ja) 2010-05-20
KR101415365B1 (ko) 2014-07-04
EP2109162A4 (en) 2011-10-05
CN101589482A (zh) 2009-11-25
US8441002B2 (en) 2013-05-14
CN101589482B (zh) 2011-11-30

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