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WO2008081717A1 - Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ - Google Patents

Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ Download PDF

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Publication number
WO2008081717A1
WO2008081717A1 PCT/JP2007/074411 JP2007074411W WO2008081717A1 WO 2008081717 A1 WO2008081717 A1 WO 2008081717A1 JP 2007074411 W JP2007074411 W JP 2007074411W WO 2008081717 A1 WO2008081717 A1 WO 2008081717A1
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
group iii
iii nitride
semiconductor layer
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/074411
Other languages
English (en)
French (fr)
Inventor
Hironao Shinohara
Hiromitsu Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007286690A external-priority patent/JP4908381B2/ja
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to US12/515,157 priority Critical patent/US8492186B2/en
Publication of WO2008081717A1 publication Critical patent/WO2008081717A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P14/36—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H10P14/3416—

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  • Led Devices (AREA)

Abstract

　本発明の目的は、内部量子効率および光取り出し効率に優れた発光素子の形成に好適に使用できる結晶性に優れたＩＩＩ族窒化物半導体層の得られる製造方法を提供することである。本発明によれば、基板１０１上に単結晶のＩＩＩ族窒化物半導体層１０３を形成するＩＩＩ族窒化物半導体層の製造方法において、基板１０１の（０００１）Ｃ面上に前記Ｃ面に非平行の表面１２ｃからなる複数の凸部１２を形成することにより、前記基板１０１上に前記Ｃ面からなる平面１１と前記凸部１２とからなる上面１０を形成する基板加工工程と、前記上面１０上に前記ＩＩＩ族窒化物半導体層１０３をエピタキシャル成長させて、前記凸部１２を前記ＩＩＩ族窒化物半導体層１０３で埋めるエピ工程とを備えるＩＩＩ族窒化物半導体層１０３の製造方法とする。
PCT/JP2007/074411 2006-12-22 2007-12-19 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ Ceased WO2008081717A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/515,157 US8492186B2 (en) 2006-12-22 2007-12-19 Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2006-346000 2006-12-22
JP2006346000 2006-12-22
JP2007224496 2007-08-30
JP2007-224496 2007-08-30
JP2007274376 2007-10-22
JP2007-274376 2007-10-22
JP2007286690A JP4908381B2 (ja) 2006-12-22 2007-11-02 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2007-286690 2007-11-02

Publications (1)

Publication Number Publication Date
WO2008081717A1 true WO2008081717A1 (ja) 2008-07-10

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PCT/JP2007/074411 Ceased WO2008081717A1 (ja) 2006-12-22 2007-12-19 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ

Country Status (2)

Country Link
KR (1) KR101071450B1 (ja)
WO (1) WO2008081717A1 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010005111A1 (ja) * 2008-07-11 2010-01-14 昭和電工株式会社 Iii族窒化物半導体積層構造体およびその製造方法
JP2010010363A (ja) * 2008-06-26 2010-01-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法
WO2010016532A1 (ja) * 2008-08-06 2010-02-11 昭和電工株式会社 Ｉｉｉ族 窒化物半導体積層構造体およびその製造方法
JP2010135490A (ja) * 2008-12-03 2010-06-17 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法
JP2010161354A (ja) * 2008-12-08 2010-07-22 Showa Denko Kk 半導体発光素子用テンプレート基板、半導体発光素子用テンプレート基板の製造方法、半導体発光素子の製造方法及び半導体発光素子
JP2011009382A (ja) * 2009-06-24 2011-01-13 Rohm Co Ltd 半導体発光素子
KR101075940B1 (ko) 2009-04-13 2011-10-21 윤무영 Ｌｅｄ 칩 소자의 구조, 그 제조방법 및 그에 의해 얻어진 ｌｅｄ 칩 소자
WO2015114936A1 (ja) * 2014-01-30 2015-08-06 エルシード株式会社 発光素子
WO2016148190A1 (ja) * 2015-03-19 2016-09-22 並木精密宝石株式会社 基板とその製造方法、及び発光素子とその製造方法、及びその基板又は発光素子を有する装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101903361B1 (ko) 2012-03-07 2018-10-04 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법

Citations (5)

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JPS60173829A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JPH11312825A (ja) * 1998-04-28 1999-11-09 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
EP1296363A1 (en) * 2000-04-21 2003-03-26 Toyoda Gosei Co., Ltd. Method of manufacturing group-iii nitride compound semiconductor device
US20050082546A1 (en) * 2003-10-21 2005-04-21 Samsung Electronics Co., Ltd. Light-emitting device and method of manufacturing the same
US20050179130A1 (en) * 2003-08-19 2005-08-18 Hisanori Tanaka Semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7560294B2 (en) * 2004-06-07 2009-07-14 Toyoda Gosei Co., Ltd. Light emitting element and method of making same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173829A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JPH11312825A (ja) * 1998-04-28 1999-11-09 Nichia Chem Ind Ltd 窒化物半導体の成長方法及び窒化物半導体素子
EP1296363A1 (en) * 2000-04-21 2003-03-26 Toyoda Gosei Co., Ltd. Method of manufacturing group-iii nitride compound semiconductor device
US20050179130A1 (en) * 2003-08-19 2005-08-18 Hisanori Tanaka Semiconductor device
US20050082546A1 (en) * 2003-10-21 2005-04-21 Samsung Electronics Co., Ltd. Light-emitting device and method of manufacturing the same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010010363A (ja) * 2008-06-26 2010-01-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法
WO2010005111A1 (ja) * 2008-07-11 2010-01-14 昭和電工株式会社 Iii族窒化物半導体積層構造体およびその製造方法
JP2010021439A (ja) * 2008-07-11 2010-01-28 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
US8211727B2 (en) 2008-08-06 2012-07-03 Showa Denko K.K. Group III nitride semiconductor multilayer structure and production method thereof
JP2010040867A (ja) * 2008-08-06 2010-02-18 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
WO2010016532A1 (ja) * 2008-08-06 2010-02-11 昭和電工株式会社 Ｉｉｉ族 窒化物半導体積層構造体およびその製造方法
US8471266B2 (en) 2008-08-06 2013-06-25 Toyoda Gosei Co., Ltd. Group III nitride semiconductor multilayer structure and production method thereof
JP2010135490A (ja) * 2008-12-03 2010-06-17 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法
US8642992B2 (en) 2008-12-03 2014-02-04 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor light emitting device
JP2010161354A (ja) * 2008-12-08 2010-07-22 Showa Denko Kk 半導体発光素子用テンプレート基板、半導体発光素子用テンプレート基板の製造方法、半導体発光素子の製造方法及び半導体発光素子
KR101075940B1 (ko) 2009-04-13 2011-10-21 윤무영 Ｌｅｄ 칩 소자의 구조, 그 제조방법 및 그에 의해 얻어진 ｌｅｄ 칩 소자
JP2011009382A (ja) * 2009-06-24 2011-01-13 Rohm Co Ltd 半導体発光素子
WO2015114936A1 (ja) * 2014-01-30 2015-08-06 エルシード株式会社 発光素子
WO2016148190A1 (ja) * 2015-03-19 2016-09-22 並木精密宝石株式会社 基板とその製造方法、及び発光素子とその製造方法、及びその基板又は発光素子を有する装置

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KR20090079993A (ko) 2009-07-22
KR101071450B1 (ko) 2011-10-10

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