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WO2008065880A1 - Method for joining microchip substrate and microchip - Google Patents

Method for joining microchip substrate and microchip Download PDF

Info

Publication number
WO2008065880A1
WO2008065880A1 PCT/JP2007/071984 JP2007071984W WO2008065880A1 WO 2008065880 A1 WO2008065880 A1 WO 2008065880A1 JP 2007071984 W JP2007071984 W JP 2007071984W WO 2008065880 A1 WO2008065880 A1 WO 2008065880A1
Authority
WO
WIPO (PCT)
Prior art keywords
microchip
resin
coating solution
substrate
microchip substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/071984
Other languages
French (fr)
Japanese (ja)
Inventor
Hiroshi Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Opto Inc
Original Assignee
Konica Minolta Opto Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Opto Inc filed Critical Konica Minolta Opto Inc
Priority to JP2008546935A priority Critical patent/JP4992123B2/en
Publication of WO2008065880A1 publication Critical patent/WO2008065880A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
    • B29C65/4805—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding characterised by the type of adhesives
    • B29C65/483—Reactive adhesives, e.g. chemically curing adhesives
    • B29C65/4835—Heat curing adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/112—Single lapped joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/112—Single lapped joints
    • B29C66/1122—Single lap to lap joints, i.e. overlap joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/05—Particular design of joint configurations
    • B29C66/10—Particular design of joint configurations particular design of the joint cross-sections
    • B29C66/11—Joint cross-sections comprising a single joint-segment, i.e. one of the parts to be joined comprising a single joint-segment in the joint cross-section
    • B29C66/114—Single butt joints
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/50—General aspects of joining tubular articles; General aspects of joining long products, i.e. bars or profiled elements; General aspects of joining single elements to tubular articles, hollow articles or bars; General aspects of joining several hollow-preforms to form hollow or tubular articles
    • B29C66/51—Joining tubular articles, profiled elements or bars; Joining single elements to tubular articles, hollow articles or bars; Joining several hollow-preforms to form hollow or tubular articles
    • B29C66/53—Joining single elements to tubular articles, hollow articles or bars
    • B29C66/534—Joining single elements to open ends of tubular or hollow articles or to the ends of bars
    • B29C66/5346—Joining single elements to open ends of tubular or hollow articles or to the ends of bars said single elements being substantially flat
    • B29C66/53461—Joining single elements to open ends of tubular or hollow articles or to the ends of bars said single elements being substantially flat joining substantially flat covers and/or substantially flat bottoms to open ends of container bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/50—General aspects of joining tubular articles; General aspects of joining long products, i.e. bars or profiled elements; General aspects of joining single elements to tubular articles, hollow articles or bars; General aspects of joining several hollow-preforms to form hollow or tubular articles
    • B29C66/51—Joining tubular articles, profiled elements or bars; Joining single elements to tubular articles, hollow articles or bars; Joining several hollow-preforms to form hollow or tubular articles
    • B29C66/54—Joining several hollow-preforms, e.g. half-shells, to form hollow articles, e.g. for making balls, containers; Joining several hollow-preforms, e.g. half-cylinders, to form tubular articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/08—Geometry, shape and general structure
    • B01L2300/0887—Laminated structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1403—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the type of electromagnetic or particle radiation
    • B29C65/1406—Ultraviolet [UV] radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
    • B29C65/1403—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation characterised by the type of electromagnetic or particle radiation
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
    • B29C65/52—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding characterised by the way of applying the adhesive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
    • B29C65/52—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding characterised by the way of applying the adhesive
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
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    • B29C65/522—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding characterised by the way of applying the adhesive by spraying, e.g. by flame spraying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
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    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
    • B29C65/52—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding characterised by the way of applying the adhesive
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
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    • B29C65/526—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding characterised by the way of applying the adhesive by printing or by transfer from the surfaces of elements carrying the adhesive, e.g. using brushes, pads, rollers, stencils or silk screens
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    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/71—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/756—Microarticles, nanoarticles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/05—Microfluidics
    • B81B2201/058—Microfluidics not provided for in B81B2201/051 - B81B2201/054

Definitions

  • the present invention relates to a method for bonding a microchip substrate in which a channel groove is formed, and a microchip manufactured by the bonding method.
  • a fine flow path circuit is formed on a silicon or glass substrate, and chemical reactions, separation, and analysis of liquid samples such as nucleic acids, proteins, and blood are carried out in a micro space.
  • a micro-analysis chip to perform, or an apparatus called u TAS (Micro Total Analysis Systems) has been put into practical use.
  • u TAS Micro Total Analysis Systems
  • a microchip is manufactured by bonding two members that have been subjected to micromachining to at least one member.
  • a glass substrate is used for the microchip, and various microfabrication methods have been proposed.
  • glass substrates are not suitable for mass production and are very expensive, development of inexpensive and disposable resin macrochips is desired.
  • Examples of the treatment for imparting hydrophilic properties to the flow channel surface include organic / inorganic coating, plasma treatment, and surface modification by flowing a solution in the flow channel.
  • the coating of SiO film is sufficiently hydrophilic and is used as a material because it is inorganic.
  • Patent Document 1 Japanese Patent Laid-Open No. 2005-80569
  • Patent Document 2 Japanese Patent Laid-Open No. 2005-77239
  • Patent Document 3 Japanese Patent Laid-Open No. 2005-771218
  • Patent Document 4 Japanese Patent Laid-Open No. 2005-74796
  • the resin microchip substrates can be bonded to each other by the method described above. In ultrasonic fusion, thermal fusion, and laser fusion, the resin surface of the substrate is melted and solidified again to join the resin microchip substrates together. When a hydrophilic film is formed and a hydrophilic film is also formed on the bonding surface, it becomes difficult to bond the microchip substrates together.
  • an inorganic SiO film when used as the hydrophilic film, it is usually a microchip substrate.
  • FIG. 7 is a cross-sectional view of a microchip substrate for explaining a conventional method for bonding microchip substrates.
  • a SiO film 103 is formed on a microchip substrate 101 having a fine flow path 102 formed on the surface.
  • an SiO film 105 is formed on a flat microchip substrate 104 for covering the fine flow path 102, and both substrates are bonded by an adhesive 106.
  • Adhesive 106 is a resin whose main component after curing is hydrophobic and exhibits hydrophobicity.
  • an SiO film 103 is formed only on the inner surface of the fine channel 102, and the An SiO film 105 is formed on the chip substrate 104 at a position corresponding to the fine flow path 102.
  • the substrates are bonded together by the adhesive 106. Even in this case, since the adhesive 106 is thicker than the SiO film 105, the adhesive 106 oozes out into the fine flow path 102.
  • an SiO film 103 is formed only on the inner surface of the fine channel 102 to
  • a SiO film 105 is formed at a position corresponding to the fine channel 102.
  • the substrates are bonded together by heat fusion, laser fusion, or ultrasonic fusion.
  • the patterning of the SiO film is observed on both the microchip substrate 101 and the microchip substrate 104.
  • the deposition position of the SiO film 105 on the microchip substrate 104 is accurately determined.
  • the surface (resin) of the microchip substrate 104 is exposed to the fine flow path 102 as shown by the broken-line circle, and the fine flow path 102 is covered only with the SiO film having a hydrophilic function.
  • the present invention solves the above-described problem, and a bonding method capable of forming a hydrophilic film on the inner surface of a fine flow path and easily bonding substrates together to manufacture a microchip, And a microchip manufactured by the bonding method.
  • At least one resin member of two resin members is formed with a channel groove, and the two resin members are formed with the channel groove.
  • a second embodiment of the present invention is a bonding method for a microchip substrate according to the first embodiment, wherein the flow path groove is formed in one of the two resin members.
  • the other resin member is a plate-like member, the coating solution is applied to the surface of the one resin member on which the channel groove is formed, and the other resin member is joined.
  • the surface to be joined of the two resin members is formed by forming a SiO film mainly composed of SiO on the surface to be bonded.
  • the two resin members are overlapped with each other facing each other, and then the one resin member and the other resin member are joined by curing the coating solution.
  • a third aspect of the present invention is the bonding method of the microchip substrate according to the first aspect, wherein the flow path groove is formed in one of the two resin members.
  • the other resin member is a flat plate member, and the application solution is applied to the joining surface of the other resin member so that the flow path groove of the one resin member is formed.
  • the surface to be joined of the two resin members is formed by forming a SiO film containing SiO as a main component on the other surface.
  • the two resin members are overlapped with each other facing each other, and then the one resin member and the other resin member are joined by curing the coating solution.
  • a fourth embodiment of the present invention is the method for joining the microchip substrates of the first embodiment, wherein the flow path groove is formed in one of the two resin members.
  • the other resin member is a flat plate member, and an SiO film containing SiO as a main component is formed on each of the surfaces to be joined of the two resin members, and the contact of the other resin member is made.
  • the coating solution is applied to the mating surfaces, the two resin members are stacked with the two resin members facing each other, and then the coating solution is cured to cure the one of the two resin members. A resin member is joined to the other resin member.
  • a fifth aspect of the present invention is the method for joining microchip substrates according to the first aspect, wherein the flow path groove is formed in one of the two resin members. And others
  • the one resin member is a flat plate member, and the coating solution is applied to the surface of the one resin member on which the channel groove is formed, and the other resin member is joined to the surface to be joined. Applying the coating solution, overlapping the two resin members with the surfaces to be joined of the two resin members facing each other, and then curing the coating solution, the one resin member and the The other resin member is joined.
  • a sixth aspect of the present invention is the microchip substrate bonding method according to the first aspect, wherein one of the two resin members and the other resin member are connected with the flow. A surface groove is formed, the coating solution is applied to the surface of the one resin member and the other resin member on which the channel groove is formed, and the two resin members are joined to each other The two resin members are overlapped with each other facing each other, and then the one resin member and the other resin member are joined by curing the coating solution.
  • a seventh aspect of the present invention is a microchip characterized by being bonded by the method for bonding microchip substrates according to any one of the first to sixth aspects.
  • a flow path groove is formed in at least one of the two resin members, and the flow path groove is formed in the two resin members.
  • the microchip is bonded with its surface facing inward, and a SiO film mainly composed of SiO is formed on the surface where the two resin members are bonded, and the SiO film is interposed through the SiO film.
  • the microchip is characterized in that the resin members are joined.
  • a ninth aspect of the present invention is the microchip according to the eighth aspect, wherein the resin member in which the channel groove is formed is a plate-like member out of the two resin members. In addition, the channel groove is formed, and the resin member is a film-like resin member.
  • a coating solution containing SiO as a main component after curing is applied to a resin member.
  • the coating solution is cured to form an SiO film on the inner surface of the channel groove and to join the two resin members.
  • FIG. 1 is a cross-sectional view of a microchip substrate for illustrating a microchip substrate bonding method according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a microchip substrate for explaining a bonding method of a microchip substrate according to Modification 1;
  • FIG. 3 is a cross-sectional view of a microchip substrate for explaining a bonding method of a microchip substrate according to Modification 2.
  • FIG. 4 is a cross-sectional view of a microchip substrate for explaining a microchip substrate bonding method according to a second embodiment of the present invention.
  • FIG. 5 is a cross-sectional view of a microchip substrate for explaining a microchip substrate bonding method according to a third embodiment of the present invention.
  • FIG. 6 is a table showing conditions for each example.
  • FIG. 7 is a cross-sectional view of a microchip substrate for explaining a microchip substrate bonding method according to the prior art.
  • FIG. 1 is a cross-sectional view of a microchip substrate for explaining a method of bonding microchip substrates according to the first embodiment of the present invention.
  • a groove-shaped fine channel 11 is formed on the surface of the microchip substrate 10.
  • the microchip substrate 20 that is the counterpart to which the microchip substrate 10 is joined is a flat substrate.
  • the microchip substrate 20 becomes a microchannel. It functions as an 11 lid and a microchip is manufactured.
  • the microchip substrates 10 and 20 correspond to an example of the “resin member” of the present invention.
  • a resin is used for the microchip substrates 10 and 20.
  • the resin is particularly limited in terms of force S, such as good moldability (transferability, releasability), high transparency, and low autofluorescence for ultraviolet light and visible light. It is not a thing.
  • force S such as good moldability (transferability, releasability), high transparency, and low autofluorescence for ultraviolet light and visible light. It is not a thing.
  • polycarbonate, polymethyl methacrylate, polystyrene, polyacrylonitrile, polyvinyl chloride, polyethylene terephthalate, nylon 6, nylon 66, polybutyl acetate, polyvinylidene chloride, polypropylene, polyisoprene, polyethylene, polydimethylsiloxane, ring Polyolefins are preferred. Particularly preferred are polymethyl methacrylate and cyclic polyolefin.
  • the microchip substrate 10 and the microchip substrate 20 may use the same material or different materials.
  • the shape of the microchip substrates 10 and 20 may be any shape as long as it is easy to handle and analyze. For example, a size of about 10 mm square to 200 mm square is preferable, and 10 mm square to 100 mm square is more preferable.
  • the shape of the microchip substrates 10 and 20 is preferably a square, rectangle, circle or the like according to the analysis method and analysis apparatus.
  • the shape of the microchannel 11 is 10 111 to both in width and depth in consideration of the fact that the amount of analysis sample and reagent used can be reduced, and the fabrication accuracy of the mold, transferability, releasability, etc.
  • the value is preferably within the range of 200 111, but is not particularly limited.
  • the aspect ratio (groove depth / groove width) is preferably about 0.2;! ⁇ 3, more preferably about 0.2 ⁇ 2.
  • the width and depth of the fine channel 11 may be determined according to the use of the microchip.
  • the cross-sectional shape of the microchannel 11 shown in FIG. 1 is a rectangular shape! / However, this shape is an example of the microchannel 11 and is a curved surface. It may be.
  • the thickness of the microchip substrate 10 on which the microchannel 11 is formed is preferably about 0.2 mm to 5 mm, more preferably 0.5 mm to 2 mm in consideration of formability.
  • the thickness of the microchip substrate 20 functioning as a lid (cover) for covering the microchannel 11 is preferably about 0.2 mm to 5 mm, more preferably 0.5 mm to 2 mm in consideration of formability.
  • a film-like resin member (sheet-like member) that is not a plate-like member may be used. in this case
  • the thickness of the finolem is preferably 30 ⁇ m to 300 ⁇ m, and more preferably 50 ⁇ m to 150 ⁇ m.
  • a coating solution 12 containing SiO as a main component after curing is applied to the surface of the microchip substrate 10 on which the microchannels 11 are formed.
  • a coating solution 21 containing SiO as a main component after curing is applied to the surface of the substrate 20.
  • the coating solution 21 is also applied to the inner surface of the fine channel 11 for the mouth chip substrate 10.
  • the coating solution for example, a solution obtained by dissolving a polysiloxane oligomer obtained by hydrolysis and condensation polymerization of alkoxysilane in an alcohol solvent is used.
  • a SiO film is formed.
  • a group made by JSR JSR
  • Examples include lath force 7003 and methyl silicate 51 manufactured by Colcoat.
  • perhydropolysilazane dissolved in xylene and dibutyl ether solvent is used for the coating solution.
  • the coating solution is heated to volatilize the solvent and at the same time react with water to form a SiO film.
  • Examples include aquamica.
  • an inorganic mono-organic hybrid polymer obtained by hydrolyzing and co-condensing an alkoxysilyl group-containing polymer and alkoxysilane is used as a coating solution by dissolving it in an alcohol solvent.
  • the alcohol solvent is volatilized by heating, and the main component is SiO.
  • coating solutions 12 and 21 it is important to uniformly apply the coating solutions 12 and 21 to the microchip substrates 10 and 20.
  • physical properties viscosity, volatility, surface tension, wettability
  • coating method select the coating method as appropriate. Examples include date bubbling, spray coating, spin coating, slit coating, screen printing, pad printing, and ink jet printing.
  • the thickness of the coating solutions 12 and 21 is such that the entire inner surface of the fine channel 11 is covered with SiO.
  • the film thickness according to the characteristics and type of coating solutions 12 and 21. For example, a value in the range of 101 111 to 3 111 is preferred 10 nm to 2 i um A value within the range is more preferable.
  • the microchip substrate 10 and the microphone port chip substrate 20 are overlapped with the fine channel 11 inside.
  • the coating solutions 12 and 21 are not cured, the microchip substrate 10 and the microchip substrate 20 are attached by the coating solutions 12 and 21.
  • the coating solutions 12 and 21 are cured to form SiO films 13 and 22.
  • thermosetting coating For example, thermosetting coating
  • Coating solutions 12, 21 function as an adhesive and can be cured
  • the microchip substrate 10 and the microchip substrate 20 can be bonded. As a result, a microchip is manufactured. Between the microchip substrate 10 and the microchip substrate 20, only SiO films 13 and 22 are interposed.
  • the curing method is appropriately selected in consideration of the physical properties (viscosity, volatility, catalyst) of liquids 12 and 21.
  • the coating solutions 12, 21 are allowed to cure at room temperature, the coating solutions 12, 21 are cured by heating at a temperature of 60 ° C to 100 ° C, or the coating solutions 12, 21 are heated at a high temperature. Curing under humidity (such as 90% humidity at 60 ° C, 90% humidity at 80 ° C). It is also possible to cure the coating solutions 12, 21 using UV curing or visible light curing.
  • the coating solutions 12 and 21 containing SiO as a main component after curing are applied to the microchip substrate.
  • the microchip substrate 10 and the microchip substrate 20 by applying them to the plates 10 and 20 and causing the coating solutions 12 and 21 to function as adhesives. Furthermore, by applying the coating solution 12 to the inner surface of the microchannel 11 and curing it, it is possible to form a SiO film having a hydrophilic function on the inner surface of the microchannel 11.
  • an SiO film is formed on the inner surface of the fine channel 11 and the micro
  • the substrate 10 and the microchip substrate 20 can be bonded, it is possible to perform the two steps of hydrophilic processing and bonding processing in one step.
  • the SiO film has a hydrophilic function, a small flow of a low molecule such as protein or a polymer
  • microchip substrates 10 and 20 are made of resin, they are usually hydrophobic, and low molecules and polymers such as proteins tend to adhere to the microchannel 11, but by forming a SiO film, Suppresses its adhesion
  • the SiO film is chemically stable, the hydrophilic function must be stably maintained.
  • the force effect that can be hydrophilized decreases with time, and the hydrophilic function is often lost within a few days. It is also possible to modify the surface of the microchip substrate 10 or 20 with a polymer such as oligoethylene glycol or 2-methacryloyloxychetyl phosphorylcholine by dipping or the like to make it hydrophilic. A uniform hydrophilic surface may not be obtained due to weak adsorption force or unevenness.
  • the microchip substrate 20 functioning as a bar
  • the same surface state can be formed even when the resin materials of the microchip substrate 10 and the microchip substrate 20 are different. As a result, the accuracy and reliability of the analysis can be increased. If the surface condition of the substrate is different, there will be variations in the flow rate and reaction of the liquid to be analyzed, and the detection sensitivity of the analysis chip will be reduced.
  • the SiO membrane is made into a fine channel 11
  • the coating solution is applied to both substrates of the microchip substrate 10 in which the microchannel 11 is formed and the flat microchip substrate 20 that functions as a cover for covering the microchannel 11.
  • the force that applied SiO2 to form the SiO film Either microchip substrate
  • the microchip substrate 10 and the microchip substrate 20 may be bonded to each other by applying a coating solution.
  • a coating solution is applied to one of the microchip substrates.
  • FIG. 2 is a cross-sectional view of a microchip substrate for explaining the microchip substrate bonding method according to Modification 1.
  • a microchip substrate 10 having a microchannel 11 formed on the substrate surface and a flat microchip substrate 20 are prepared.
  • the SiO film 23 is formed on the surface of the flat microchip substrate 20.
  • a SiO film 23 can be formed by CVD, or a coating solution containing SiO as a main component after curing can be used.
  • a coating solution 12 containing SiO as a main component after curing is applied to the surface on which the microchannel 11 is formed, on the microchip substrate 10 on which is formed.
  • the microchip substrate 10 and the mic chip substrate 20 are overlapped with the fine channel 11 inside.
  • the coating solution 12 is not cured, the microchip substrate 10 and the microchip substrate 20 are bonded by the coating solution 12.
  • the coating solution 12 is cured to form the SiO film 13.
  • the coating solution 12 functions as an adhesive and can be cured to bond the microchip substrate 10 and the microchip substrate 20 together. As a result, the microchip is manufactured. Between the microchip substrate 10 and the microchip substrate 20, there is an SiO film
  • the coating solution 12 containing SiO as a main component after curing is applied to one microchip.
  • the coating solution 12 can function as an adhesive, and the microchip substrate 10 and the microchip substrate 20 can be bonded. Furthermore, by applying the coating solution 12 to the inner surface of the microchannel 11 and curing it, it is possible to form a SiO film having a hydrophilic function on the inner surface of the microchannel 11. in this way,
  • the SiO film is formed on the inner surface of the fine channel 11 and
  • microchip substrate 10 and the microchip substrate 20 can be bonded, It is possible to perform the two steps of aqueous treatment and bonding treatment in one step.
  • FIG. 3 is a cross-sectional view of a microchip substrate for explaining a bonding method of the microchip substrate according to the second modification.
  • the force is changed by applying the coating solution 12 mainly composed of SiO after curing to the microchip substrate 10 on which the microchannel 11 is formed to form the SiO film.
  • the coating liquid 21 was applied to the microchip substrate 20 to be bonded, and the SiO2 film was formed on the microphone tip chip substrate 10 before the substrates were stacked.
  • a microchip substrate 10 having a microchannel 11 formed on the substrate surface and a flat microchip substrate 20 are prepared.
  • the SiO film is formed on the surface of the microchip substrate 10 on which the microchannel 11 is formed.
  • SiO film 14 is formed by CVD, or SiO is the main component after curing.
  • a coating solution is applied to the substrate surface and then cured to form the SiO film 14.
  • the SiO film 14 is also formed on the inner surface of the fine channel 11.
  • the substrate 20 is coated with a coating solution 21 containing SiO as a main component after curing.
  • the microchip substrate 10 and the mic chip substrate 20 are overlapped with the fine channel 11 inside.
  • the coating solution 21 is not cured, the microchip substrate 10 and the microchip substrate 20 are bonded together by the coating solution 21.
  • the coating solution 21 is cured to form the SiO film 22.
  • the coating solution 21 functions as an adhesive and can be cured to bond the microchip substrate 10 and the microchip substrate 20 together. As a result, the microchip is manufactured. Between the microchip substrate 10 and the microchip substrate 20, there is an SiO film
  • the coating solution 12 containing SiO as a main component after curing is applied to one microchip. Even when applied to the substrate 20, the coating solution 21 can function as an adhesive, and the microchip substrate 10 and the microchip substrate 20 can be bonded.
  • FIG. 4 is a cross-sectional view of a microchip substrate for explaining a method for bonding microchip substrates according to a second embodiment of the present invention.
  • the fine flow path is formed only on one of the microchip substrates, but in the second embodiment, the fine flow paths are formed on both microchip substrates.
  • a microchip substrate 10 having a microchannel 11 formed on the surface and a microchip substrate 30 having a microchannel 31 formed on the same surface are prepared.
  • a deeper microchannel can be formed.
  • a coating solution 12 containing SiO as a main component after curing is applied to the surface on which the microchannel 11 is formed on the microchip substrate 10.
  • the surface on which the fine flow path 31 is formed has SiO as a main component after curing.
  • coating solution 32 Apply coating solution 32.
  • the coating solutions 12 and 32 are also applied to the inner surfaces of the microchannels 11 and 31 for both substrates.
  • the microchip substrate 10 and the microchip substrate 30 are overlapped with the fine flow paths 11 and 31 inside.
  • the fine channels 11 and 31 are aligned so that the fine channel 11 and the fine channel 31 overlap at the same position.
  • the coating solutions 12 and 32 are not cured, the microchip substrate 10 and the microchip substrate 30 are bonded by the coating solutions 12 and 32.
  • the coating films 12 and 32 are cured to form the SiO films 13 and 33.
  • the coating solutions 12 and 32 function as an adhesive and can be cured to bond the microchip substrate 10 and the microchip substrate 30 together. By this bonding, it is possible to form a fine channel 40 having a large groove aspect ratio.
  • both the microchip substrate 10 and the microchip substrate 30 are Although the coating solution is applied to the plate, the microchip substrates may be bonded to each other by applying the coating solution to any one of the microphone chip substrates as in the first and second modifications.
  • FIG. 5 is a cross-sectional view of a microchip substrate for explaining a microchip substrate bonding method according to a third embodiment of the present invention.
  • a microchip substrate 50 on which a microchannel 51 is formed and a flat microchip substrate 60 are prepared.
  • the microchip substrate 50 has a SiO film 52 formed in advance on the surface on which the microchannel 51 is formed, and the microchip substrate 60 also has an SiO film.
  • SiO films 52 and 61 are pre-formed.
  • SiO films 52 and 61 are formed by CVD, or after curing, S
  • the coating solution that forms the coating film 52, 61 is applied to the substrate surface, and then cured to form a SiO film 52, 61.
  • the microchip substrate 50 and the microphone port chip substrate 60 are overlapped with the fine flow path 51 inside.
  • the coating solution 70 is not cured, the microchip substrate 50 and the microchip substrate 60 are bonded together by the coating solution 70.
  • the coating solution 70 is cured to form the SiO film 71.
  • Coating solution 70 functions as an adhesive and cures
  • the microchip substrate 50 and the microchip substrate 60 can be joined. Thereby, the microchip is manufactured. Just like a conventional SiO film between the microchip substrate 50 and the microchip substrate 60, the adhesive, etc.
  • FIG. 6 is a table showing the conditions of each example. (Example 1)
  • Example 1 a specific example of the first embodiment will be described.
  • a polymethylmethacrylate resin (Mitsubishi Rayon, Ataripet VH), which is a transparent resin material, is molded using an injection molding machine, and the width is 50 ⁇ m and the depth is 50 m on a plate-shaped member with an opening dimension of 50 mm x 50 mm x 1 mm.
  • a channel-side micro-chip chip substrate composed of a plurality of microchannels and a plurality of through-holes having an inner diameter of 2 mm was produced.
  • This flow path-side microchip substrate force S corresponds to the microchip substrate 10 on which the fine flow path 11 in the first embodiment is formed.
  • a cover-side microchip substrate having an opening size of 50 mm ⁇ 50 mm ⁇ lmm was produced.
  • This cover-side microchip substrate force S corresponds to the microphone chip substrate 20 that functions as a lid (cover) in the first embodiment.
  • a spray coater manufactured by EVG, nanospray coating
  • EVG nanospray coating
  • JSR glass force 7506
  • JSR glass force 7506
  • the coated surfaces of the channel-side microchip substrate and the cover-side microchip substrate are overlapped with each other and placed in an 80 ° C. oven for 30 minutes to cure the coating solution, and the channel-side microchip substrate and the cover are covered.
  • the side microchip substrate was bonded.
  • Si silicon
  • a hybrid film composed mainly of an O film was formed. This produced a microchip.
  • Example 2 In Example 2, a specific example of the first embodiment will be described. In Example 2, a film was used for the cover-side microphone opening chip substrate.
  • An injection molding machine is used to mold a cyclic polyolefin resin (Zeon, made by Nippon Zeon Co., Ltd.), and a plate-shaped member with external dimensions of 50 mm x 50 mm x lmm. Then, a flow path side microchip substrate composed of a plurality of through holes having an inner diameter of 2 mm was produced.
  • This flow path side microchip substrate corresponds to the microchip substrate 10 on which the fine flow path 11 in the first embodiment is formed.
  • a transparent resin film manufactured by Nippon Zeon Co., Ltd., Zeonor film
  • the film thickness is 100 m.
  • This film-like cover-side microchip substrate force corresponds to the microchip substrate 20 functioning as a lid (cover) in the first embodiment.
  • a spray coater (USC-200ST, manufactured by Usio Electric Co., Ltd.) is used on the joint surface between the flow path side microchip substrate and the cover side microchip substrate, and the coating solution (AZ Electric Nick Materials, AQUAMICA) is used.
  • the coating was adjusted to a thickness.
  • a spray coater it was possible to apply the coating solution evenly inside the fine channel with a width of 50 Hm and a depth of 50 Hm.
  • the thickness of the coating film in the microchannel was 0.5 m.
  • the flow path side microchip substrate and the cover side microchip substrate were firmly bonded, they did not sufficiently react with water, and thus contained a small amount of organic components. Therefore, by putting it in a high-temperature and high-humidity tank with a temperature of 80 ° C and a humidity of 90%, the SiO film was formed.
  • Example 3 a specific example of Modification 2 will be described.
  • the coating solution was applied to a flat microchip substrate that functions as a lid (cover), and the substrates were bonded together.
  • An injection molding machine is used to form a cyclic polyolefin resin (Zeon Corporation, made by Nippon Zeon Co., Ltd.), and a plate-shaped member with outer dimensions of 50mm x 50mm x lmm. Then, a flow path side microchip substrate composed of a plurality of through holes having an inner diameter of 2 mm was produced. This flow path side microchip substrate corresponds to the microchip substrate 10 in which the fine flow path 11 in the second modification is formed. Further, a transparent resin film (manufactured by Nippon Zeon Co., Ltd., Zeonor film) was used for the cover side microchip substrate. The film is rolled into a roll with a width of 900 mm and a thickness of 00 m. This film-like cover-side microchip substrate force is equivalent to the microchip substrate 20 in Modification 2 above.
  • a transparent resin film manufactured by Nippon Zeon Co., Ltd., Zeonor film
  • a SiO film having a thickness of 150 nm was formed on the bonding surface of the flow path side microchip substrate by a CVD film forming apparatus (PD-270ST, manufactured by Samco).
  • the raw material for CVD is TEOS (made by ADEKA).
  • the coating solution manufactured by AZ Electronic Materials, Aquamica was applied so as to have a thickness of l ⁇ m.
  • the surfaces of the substrate coated with the coating solution were stacked and placed in an oven at 100 ° C for 1 hour for temporary curing.
  • the flow path side microchip substrate and the cover side microchip substrate are strong.
  • the SiO film was formed by placing it in a high-temperature and high-humidity tank with a temperature of 80 ° C and a humidity of 90% for 3 hours. Thereby, the microchip is manufactured.
  • the SiO film can be finely flowed by using a dry process such as CVD. It becomes possible to form uniformly in the path.
  • the coating solution By applying the coating solution to the side microchip substrate using a slit coater, it is possible to apply a large area coating solution at a time. Furthermore, a large number of channel-side microchip substrates can be stacked and bonded onto a film-like cover-side microchip substrate having a large area, and an SiO film can be simultaneously formed on a plurality of microchips.
  • Example 4 a specific example of the third embodiment will be described.
  • An injection molding machine is used to form a cyclic polyolefin resin (Zeon Corporation, made by Nippon Zeon Co., Ltd.), and a plate-shaped member with outer dimensions of 50mm x 50mm x lmm. Then, a flow path side microchip substrate composed of a plurality of through holes having an inner diameter of 2 mm was produced.
  • This flow path side microchip substrate corresponds to the microchip substrate 50 in which the fine flow path 51 in the third embodiment is formed.
  • a transparent resin film manufactured by Nippon Zeon Co., Ltd., Zeonor film
  • the film thickness is 100 m.
  • This film-like cover-side microchip substrate force corresponds to the microchip substrate 60 functioning as a lid (cover) in the third embodiment.
  • the raw material for VD was TEOS (manufactured by ADEKA). Using a CVD film deposition system, it was possible to form a uniform SiO film inside a fine channel with a width of 50 111 and a depth of 50 m.
  • the thickness of the SiO film inside the microchannel was lOOnm. Furthermore, the cover side microchip
  • the surfaces of the substrate coated with the coating solution were stacked and placed in an oven at 100 ° C for 1 hour for temporary curing.
  • the Si02 film was formed by placing it in a high-temperature and high-humidity tank with a temperature of 80 ° C and a humidity of 90% for 3 hours. Thereby, the microchip is manufactured.
  • the SiO film can be finely flowed by using a dry process such as CVD. It becomes possible to form uniformly on the road
  • Example 4 a dense SiO film was formed on the surface of the film-like cover-side microchip substrate using a CVD apparatus or the like.
  • Example 4 instead of a force SiO film using a SiO film as a coating on the surface of the film-like cover-side microphone opening chip substrate.
  • an acrylic or silicon hard coat film may be formed on the film-like microchip substrate on the cover side.
  • the coating solution is cured to form a SiO film.
  • a microchip can be manufactured by bonding a black chip substrate.
  • a coating solution containing SiO as a main component after curing is applied to the inner surface of the fine flow path to form a microchip substrate.

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Abstract

This invention provides a joining method which can easily manufacture a microchip by merely joining substrates to each other by taking advantage of a hydrophilic film on a fine flow passage in its internal face. The joining method comprises the following steps. A coating solution (12), which is converted to SiO2 upon curing, is coated onto a microchip substrate (10), with a fine flow passage (11) formed therein, on its fine flow passage (11) formed side. On the other hand, a coating solution (21), which is converted to SiO2 upon curing, is coated onto a flat plate-shaped microchip substrate (20) on its side to which the microchip substrate (10) is to be joined. The microchip substrates (10, 20) are superimposed on top of each other so that the microchip substrate (10) on its fine flow passage (11) side coated with the coating solution (12) faces the microchip substrate (20) on its coating solution (21) coated side. The coating solutions (12, 21) are then cured and are converted to SiO2 films (13, 22), whereby the microchip substrates (10, 20) are joined to each other.

Description

明 細 書  Specification

マイクロチップ基板の接合方法、及びマイクロチップ  Microchip substrate bonding method and microchip

技術分野  Technical field

[0001] この発明は、流路用溝が形成されたマイクロチップ基板を接合する方法、及び、そ の接合方法によって製造されるマイクロチップに関する。  TECHNICAL FIELD [0001] The present invention relates to a method for bonding a microchip substrate in which a channel groove is formed, and a microchip manufactured by the bonding method.

背景技術  Background art

[0002] 微細加工技術を利用してシリコンやガラス基板上に微細な流路ゃ回路を形成し、 微小空間上で核酸、タンパク質、血液などの液体試料の化学反応や、分離、分析な どを行うマイクロ分析チップ、あるいは; u TAS (Micro Total Analysis Systems )と称される装置が実用化されている。このようなマイクロチップの利点としては、サン プルや試薬の使用量又は廃液の排出量が軽減され、省スペースで持ち運び可能な 安価なシステムの実現が考えられる。  [0002] Using microfabrication technology, a fine flow path circuit is formed on a silicon or glass substrate, and chemical reactions, separation, and analysis of liquid samples such as nucleic acids, proteins, and blood are carried out in a micro space. A micro-analysis chip to perform, or an apparatus called u TAS (Micro Total Analysis Systems) has been put into practical use. As an advantage of such a microchip, it is conceivable to realize an inexpensive system that can be carried in a small space because the amount of samples and reagents used or the amount of waste liquid discharged is reduced.

[0003] マイクロチップは、少なくとも一方の部材に微細加工が施された部材 2つをはり合わ せることにより製造される。従来においては、マイクロチップにはガラス基板が用いら れ、様々な微細加工方法が提案されている。し力もながら、ガラス基板は大量生産に は向かず、非常に高コストであるため、廉価で使い捨て可能な樹脂製マクロチップの 開発が望まれている。  [0003] A microchip is manufactured by bonding two members that have been subjected to micromachining to at least one member. Conventionally, a glass substrate is used for the microchip, and various microfabrication methods have been proposed. However, since glass substrates are not suitable for mass production and are very expensive, development of inexpensive and disposable resin macrochips is desired.

[0004] また、このようなマイクロチップのように微細流路中に通液して検査を行うような素子 においては、流路にタンパク質などの液体試料が付着しないように、流路表面に親 水性の性質を付与する処理が行われて!/、る。  [0004] In addition, in such an element that performs inspection by passing through a fine channel, such as a microchip, the surface of the channel is protected so that a liquid sample such as protein does not adhere to the channel. A treatment that imparts aqueous properties is performed!

[0005] 流路表面に親水性の性質を付与する処理としては、有機物/無機物のコーティン グ、プラズマ処理、流路内に溶液を流すことによる表面修飾などの手法がある。その なかでも、 SiO膜のコーティングは親水性も十分にあり、無機物であるため材料とし  [0005] Examples of the treatment for imparting hydrophilic properties to the flow channel surface include organic / inorganic coating, plasma treatment, and surface modification by flowing a solution in the flow channel. Among them, the coating of SiO film is sufficiently hydrophilic and is used as a material because it is inorganic.

2  2

て安定、高透明度を有するなどの特長がある。  It has features such as high stability and high transparency.

[0006] また、マイクロチップ基板を接合する方法として、接着剤を用いて接合する方法、有 機溶剤で樹脂基板の表面を溶かして接合する方法 (例えば特許文献 1)、超音波融 着を利用して接合する方法 (例えば特許文献 2)、熱融着を利用して接合する方法（ 例えば特許文献 3)、レーザ融着を利用する方法などがある（例えば特許文献 4)。 特許文献 1 :特開 2005— 80569号公報 [0006] In addition, as a method of bonding microchip substrates, a method of bonding using an adhesive, a method of melting and bonding the surface of a resin substrate with an organic solvent (for example, Patent Document 1), and ultrasonic fusion are used. (For example, Patent Document 2), a method of joining using thermal fusion ( For example, Patent Document 3) and a method using laser fusion (for example, Patent Document 4). Patent Document 1: Japanese Patent Laid-Open No. 2005-80569

特許文献 2：特開 2005— 77239号公報  Patent Document 2: Japanese Patent Laid-Open No. 2005-77239

特許文献 3：特開 2005— 771218号公報  Patent Document 3: Japanese Patent Laid-Open No. 2005-771218

特許文献 4：特開 2005— 74796号公報  Patent Document 4: Japanese Patent Laid-Open No. 2005-74796

発明の開示  Disclosure of the invention

発明が解決しょうとする課題  Problems to be solved by the invention

[0007] マイクロチップ基板に親水性の有する膜を形成しない場合、上記のような方法で樹 脂製のマイクロチップ基板同士を接合することができる。また、超音波融着、熱融着、 及びレーザ融着では、いずれも基板の樹脂表面を溶かして再度固化させることで樹 脂製のマイクロチップ基板同士を接合するため、微細流路の内面に親水性の膜が形 成されている場合であって、接合面にも親水性の膜が形成されている場合、マイクロ チップ基板同士を接合することが困難になる。  [0007] When a hydrophilic film is not formed on the microchip substrates, the resin microchip substrates can be bonded to each other by the method described above. In ultrasonic fusion, thermal fusion, and laser fusion, the resin surface of the substrate is melted and solidified again to join the resin microchip substrates together. When a hydrophilic film is formed and a hydrophilic film is also formed on the bonding surface, it becomes difficult to bond the microchip substrates together.

[0008] 特に、親水性の膜として無機物の SiO膜を利用する場合、通常はマイクロチップ基  [0008] In particular, when an inorganic SiO film is used as the hydrophilic film, it is usually a microchip substrate.

2  2

板同士の接合面にも SiO膜を形成するため、マイクロチップ基板同士の接合には接  Since a SiO film is also formed on the bonding surface between the plates, the bonding between the microchip substrates is not

2  2

着剤を用いるのが一般的である。  It is common to use a dressing.

[0009] しかしながら、接着剤を用いてマイクロチップ基板同士を接合する場合、図 7に示す 問題がある。図 7は、従来技術に係るマイクロチップ基板の接合方法を説明するため のマイクロチップ基板の断面図である。例えば、図 7 (a)に示すように、表面に微細流 路 102が形成されたマイクロチップ基板 101に SiO膜 103を形成する。このとき、微 However, when bonding microchip substrates using an adhesive, there is a problem shown in FIG. FIG. 7 is a cross-sectional view of a microchip substrate for explaining a conventional method for bonding microchip substrates. For example, as shown in FIG. 7A, a SiO film 103 is formed on a microchip substrate 101 having a fine flow path 102 formed on the surface. At this time,

2  2

細流路 102の内面のみならず、相手方の基板と接合する面 (接合面）にも SiO膜 10  Not only the inner surface of the narrow channel 102 but also the surface (bonding surface) to be bonded to the other substrate is SiO film 10

2 2

3を形成する。そして、微細流路 102をカバーするための平板状のマイクロチップ基 板 104に SiO膜 105を形成し、接着剤 106によって両基板を接合する。このように接 Form 3 Then, an SiO film 105 is formed on a flat microchip substrate 104 for covering the fine flow path 102, and both substrates are bonded by an adhesive 106. In this way

2  2

着剤 106によって基板同士を接合する場合、破線の円で示すように、微細流路 102 内に接着剤 106が染み出して微細流路 102を塞いでしまうおそれがある。また、接着 剤 106は硬化後の主成分が樹脂であり、疎水性を示すため、 SiO膜による親水性機  When the substrates are bonded to each other by the adhesive 106, the adhesive 106 may ooze out into the fine flow path 102 and block the fine flow path 102 as indicated by a broken-line circle. Adhesive 106 is a resin whose main component after curing is hydrophobic and exhibits hydrophobicity.

2  2

能が妨げられるおそれがある。  May interfere with performance.

[0010] また、図 7 (b)に示すように、微細流路 102の内面のみに SiO膜 103を形成し、マ イク口チップ基板 104には、その微細流路 102に対応した位置に SiO膜 105を形成 In addition, as shown in FIG. 7 (b), an SiO film 103 is formed only on the inner surface of the fine channel 102, and the An SiO film 105 is formed on the chip substrate 104 at a position corresponding to the fine flow path 102.

2  2

して、接着剤 106によって基板同士を接合する。この場合であっても、接着剤 106の 方が SiO膜 105よりも厚いため、接着剤 106が微細流路 102内に染み出してしまう  Then, the substrates are bonded together by the adhesive 106. Even in this case, since the adhesive 106 is thicker than the SiO film 105, the adhesive 106 oozes out into the fine flow path 102.

2  2

おそれがある。  There is a fear.

[0011] また、図 7 (c)に示すように、微細流路 102の内面のみに SiO膜 103を形成し、マイ  In addition, as shown in FIG. 7 (c), an SiO film 103 is formed only on the inner surface of the fine channel 102 to

2  2

クロチップ基板 104には、その微細流路 102に対応した位置に SiO膜 105を形成し  On the black chip substrate 104, a SiO film 105 is formed at a position corresponding to the fine channel 102.

2  2

て、熱融着、レーザ融着、又は超音波融着で基板同士を接合する。このような場合、 SiO膜のパターユングがマイクロチップ基板 101とマイクロチップ基板 104の両方で Then, the substrates are bonded together by heat fusion, laser fusion, or ultrasonic fusion. In such a case, the patterning of the SiO film is observed on both the microchip substrate 101 and the microchip substrate 104.

2 2

必要となる。さらに、マイクロチップ基板 104への SiO膜 105の成膜位置を精度良く  Necessary. In addition, the deposition position of the SiO film 105 on the microchip substrate 104 is accurately determined.

2  2

決めないと、破線の円で示すように、マイクロチップ基板 104の表面（樹脂）が微細流 路 102に露出することになり、親水性機能を有する SiO膜だけで微細流路 102を覆  If not determined, the surface (resin) of the microchip substrate 104 is exposed to the fine flow path 102 as shown by the broken-line circle, and the fine flow path 102 is covered only with the SiO film having a hydrophilic function.

2  2

うことができなくなる。その結果、微細流路 102においての親水性機能が保たれない おそれがある。  I can't do it. As a result, the hydrophilic function in the fine channel 102 may not be maintained.

[0012] 以上のように、接着剤を用いた場合、微細流路内に接着剤がはみ出してしまう問題 があり、また、接着剤を用いない場合であっても、 SiO膜の成膜位置を精度良く決め  [0012] As described above, when an adhesive is used, there is a problem that the adhesive protrudes into the fine flow path, and even when the adhesive is not used, the position where the SiO film is formed is determined. Decide with precision

2  2

る必要があり、その位置合わせが困難であるという問題がある。いずれの方法によつ ても、微細流路内において、 SiO膜による親水性機能を確保することが困難という問  There is a problem that alignment is difficult. With either method, it is difficult to secure the hydrophilic function by the SiO film in the fine channel.

2  2

題がある。また、従来の方法では、コストの面からも量産には適していない。  There is a title. In addition, the conventional method is not suitable for mass production in terms of cost.

[0013] この発明は上記の問題を解決するものであり、微細流路の内面に親水性の膜を形 成し、簡便に基板同士を接合してマイクロチップを製造することができる接合方法、 及びその接合方法によって製造されるマイクロチップを提供することを目的とする。 課題を解決するための手段 [0013] The present invention solves the above-described problem, and a bonding method capable of forming a hydrophilic film on the inner surface of a fine flow path and easily bonding substrates together to manufacture a microchip, And a microchip manufactured by the bonding method. Means for solving the problem

[0014] この発明の第 1の形態は、 2つの樹脂製部材のうち少なくとも 1つの樹脂製部材に は流路用溝が形成され、前記 2つの樹脂製部材を、前記流路用溝が形成されている 面を内側にして接合するマイクロチップ基板の接合方法であって、前記 2つの樹脂製 部材のうち少なくとも 1つの樹脂製部材の前記接合する面の表面に、硬化後に SiO [0014] In the first aspect of the present invention, at least one resin member of two resin members is formed with a channel groove, and the two resin members are formed with the channel groove. A method of joining a microchip substrate to be bonded with the surface facing inward, wherein at least one of the two resin members is bonded to the surface of the surface to be bonded after being cured by SiO

2 が主成分となる塗布溶液を塗布し、前記 2つの樹脂製部材の前記接合する面同士を 向かい合わせて前記 2つの樹脂製部材を重ね、その後、前記塗布溶液を硬化させる ことで前記 2つの樹脂製部材を接合することを特徴とするマイクロチップ基板の接合 方法である。 2 is applied as a main component, the surfaces to be joined of the two resin members face each other, the two resin members are stacked, and then the coating solution is cured. This is a method for joining microchip substrates, characterized in that the two resin members are joined together.

[0015] この発明の第 2の形態は、第 1の形態のマイクロチップ基板の接合方法であって、 前記 2つの樹脂製部材のうち、一方の樹脂製部材には前記流路用溝が形成され、他 方の樹脂製部材は平板状の部材であり、前記一方の樹脂製部材の前記流路用溝が 形成された面に前記塗布溶液を塗布し、前記他方の樹脂製部材の前記接合する面 に SiOを主成分とする SiO膜を形成し、前記 2つの樹脂製部材の前記接合する面 [0015] A second embodiment of the present invention is a bonding method for a microchip substrate according to the first embodiment, wherein the flow path groove is formed in one of the two resin members. The other resin member is a plate-like member, the coating solution is applied to the surface of the one resin member on which the channel groove is formed, and the other resin member is joined. The surface to be joined of the two resin members is formed by forming a SiO film mainly composed of SiO on the surface to be bonded.

2 2 twenty two

同士を向かい合わせて前記 2つの樹脂製部材を重ね、その後、前記塗布溶液を硬 化させることで前記一方の樹脂製部材と前記他方の樹脂製部材を接合することを特 徴とする。  The two resin members are overlapped with each other facing each other, and then the one resin member and the other resin member are joined by curing the coating solution.

[0016] この発明の第 3の形態は、第 1の形態のマイクロチップ基板の接合方法であって、 前記 2つの樹脂製部材のうち、一方の樹脂製部材には前記流路用溝が形成され、他 方の樹脂製部材は平板状の部材であり、前記他方の樹脂製部材の前記接合する面 に前記塗布溶液を塗布し、前記一方の樹脂製部材の前記流路用溝が形成された面 に SiOを主成分とする SiO膜を形成し、前記 2つの樹脂製部材の前記接合する面 [0016] A third aspect of the present invention is the bonding method of the microchip substrate according to the first aspect, wherein the flow path groove is formed in one of the two resin members. The other resin member is a flat plate member, and the application solution is applied to the joining surface of the other resin member so that the flow path groove of the one resin member is formed. The surface to be joined of the two resin members is formed by forming a SiO film containing SiO as a main component on the other surface.

2 2 twenty two

同士を向かい合わせて前記 2つの樹脂製部材を重ね、その後、前記塗布溶液を硬 化させることで前記一方の樹脂製部材と前記他方の樹脂製部材を接合することを特 徴とする。  The two resin members are overlapped with each other facing each other, and then the one resin member and the other resin member are joined by curing the coating solution.

[0017] この発明の第 4の形態は、第 1の形態のマイクロチップ基板の接合方法であって、 前記 2つの樹脂製部材のうち、一方の樹脂製部材には前記流路用溝が形成され、他 方の樹脂製部材は平板状の部材であり、前記 2つの樹脂製部材の前記接合する面 それぞれに SiOを主成分とする SiO膜を形成し、前記他方の樹脂製部材の前記接  [0017] A fourth embodiment of the present invention is the method for joining the microchip substrates of the first embodiment, wherein the flow path groove is formed in one of the two resin members. The other resin member is a flat plate member, and an SiO film containing SiO as a main component is formed on each of the surfaces to be joined of the two resin members, and the contact of the other resin member is made.

2 2  twenty two

合する面に前記塗布溶液を塗布し、前記 2つの樹脂製部材の前記接合する面同士 を向かい合わせて前記 2つの樹脂製部材を重ね、その後、前記塗布溶液を硬化させ ることで前記一方の樹脂製部材と前記他方の樹脂製部材を接合することを特徴とす  The coating solution is applied to the mating surfaces, the two resin members are stacked with the two resin members facing each other, and then the coating solution is cured to cure the one of the two resin members. A resin member is joined to the other resin member.

[0018] この発明の第 5の形態は、第 1の形態のマイクロチップ基板の接合方法であって、 前記 2つの樹脂製部材のうち、一方の樹脂製部材には前記流路用溝が形成され、他 方の樹脂製部材は平板状の部材であり、前記一方の樹脂製部材の前記流路用溝が 形成された面に前記塗布溶液を塗布し、前記他方の樹脂製部材の前記接合する面 に前記塗布溶液を塗布し、前記 2つの樹脂製部材の前記接合する面同士を向かい 合わせて前記 2つの樹脂製部材を重ね、その後、前記塗布溶液を硬化させることで 前記一方の樹脂製部材と前記他方の樹脂製部材を接合することを特徴とする。 [0018] A fifth aspect of the present invention is the method for joining microchip substrates according to the first aspect, wherein the flow path groove is formed in one of the two resin members. And others The one resin member is a flat plate member, and the coating solution is applied to the surface of the one resin member on which the channel groove is formed, and the other resin member is joined to the surface to be joined. Applying the coating solution, overlapping the two resin members with the surfaces to be joined of the two resin members facing each other, and then curing the coating solution, the one resin member and the The other resin member is joined.

[0019] この発明の第 6の形態は、第 1の形態のマイクロチップ基板の接合方法であって、 前記 2つの樹脂製部材のうち、一方の樹脂製部材と他方の樹脂製部材に前記流路 用溝が形成され、前記一方の樹脂製部材と前記他方の樹脂製部材の前記流路用溝 が形成された面に前記塗布溶液を塗布し、前記 2つの樹脂製部材の前記接合する 面同士を向かい合わせて前記 2つの樹脂製部材を重ね、その後、前記塗布溶液を 硬化させることで前記一方の樹脂製部材と前記他方の樹脂製部材を接合することを 特徴とする。 [0019] A sixth aspect of the present invention is the microchip substrate bonding method according to the first aspect, wherein one of the two resin members and the other resin member are connected with the flow. A surface groove is formed, the coating solution is applied to the surface of the one resin member and the other resin member on which the channel groove is formed, and the two resin members are joined to each other The two resin members are overlapped with each other facing each other, and then the one resin member and the other resin member are joined by curing the coating solution.

[0020] この発明の第 7の形態は、第 1の形態乃至第 6の形態のいずれかのマイクロチップ 基板の接合方法によって接合されたことを特徴とするマイクロチップである。  [0020] A seventh aspect of the present invention is a microchip characterized by being bonded by the method for bonding microchip substrates according to any one of the first to sixth aspects.

[0021] この発明の第 8の形態は、 2つの樹脂製部材のうち少なくとも 1つの樹脂製部材に は流路用溝が形成され、前記 2つの樹脂製部材を、前記流路用溝が形成されている 面を内側にして接合されたマイクロチップであって、前記 2つの樹脂製部材が接合し ている面には SiOを主成分とする SiO膜が形成され、前記 SiO膜を介して前記 2つ  [0021] In an eighth aspect of the present invention, a flow path groove is formed in at least one of the two resin members, and the flow path groove is formed in the two resin members. The microchip is bonded with its surface facing inward, and a SiO film mainly composed of SiO is formed on the surface where the two resin members are bonded, and the SiO film is interposed through the SiO film. Two

2 2 2  2 2 2

の樹脂製部材が接合されていることを特徴とするマイクロチップである。  The microchip is characterized in that the resin members are joined.

[0022] この発明の第 9の形態は、第 8の形態のマイクロチップであって、前記 2つの樹脂製 部材のうち、前記流路用溝が形成された樹脂製部材は板状の部材であり、前記流路 用溝が形成されてレ、な!/、樹脂製部材はフィルム状の樹脂製部材であることを特徴と する。 [0022] A ninth aspect of the present invention is the microchip according to the eighth aspect, wherein the resin member in which the channel groove is formed is a plate-like member out of the two resin members. In addition, the channel groove is formed, and the resin member is a film-like resin member.

発明の効果  The invention's effect

[0023] この発明によると、硬化後に SiOが主成分となる塗布溶液を樹脂製部材に塗布し  [0023] According to the present invention, a coating solution containing SiO as a main component after curing is applied to a resin member.

2  2

、樹脂製部材同士を重ねた後、その塗布溶液を硬化させることで、流路用溝の内面 に SiO膜を形成するとともに、 2つの樹脂製部材を接合することが可能となる。  After the resin members are stacked, the coating solution is cured to form an SiO film on the inner surface of the channel groove and to join the two resin members.

2  2

図面の簡単な説明 [0024] [図 1]この発明の第 1実施形態に係るマイクロチップ基板の接合方法を説明するため のマイクロチップ基板の断面図である。 Brief Description of Drawings FIG. 1 is a cross-sectional view of a microchip substrate for illustrating a microchip substrate bonding method according to a first embodiment of the present invention.

[図 2]変形例 1に係るマイクロチップ基板の接合方法を説明するためのマイクロチップ 基板の断面図である。  FIG. 2 is a cross-sectional view of a microchip substrate for explaining a bonding method of a microchip substrate according to Modification 1;

[図 3]変形例 2に係るマイクロチップ基板の接合方法を説明するためのマイクロチップ 基板の断面図である。  FIG. 3 is a cross-sectional view of a microchip substrate for explaining a bonding method of a microchip substrate according to Modification 2.

[図 4]この発明の第 2実施形態に係るマイクロチップ基板の接合方法を説明するため のマイクロチップ基板の断面図である。  FIG. 4 is a cross-sectional view of a microchip substrate for explaining a microchip substrate bonding method according to a second embodiment of the present invention.

[図 5]この発明の第 3実施形態に係るマイクロチップ基板の接合方法を説明するため のマイクロチップ基板の断面図である。  FIG. 5 is a cross-sectional view of a microchip substrate for explaining a microchip substrate bonding method according to a third embodiment of the present invention.

[図 6]各実施例の条件を示す表である。  FIG. 6 is a table showing conditions for each example.

[図 7]従来技術に係るマイクロチップ基板の接合方法を説明するためのマイクロチッ プ基板の断面図である。  FIG. 7 is a cross-sectional view of a microchip substrate for explaining a microchip substrate bonding method according to the prior art.

符号の説明  Explanation of symbols

[0025] 10、 20、 30、 50、 60 マイクロチップ基板 [0025] 10, 20, 30, 50, 60 Microchip substrate

11、 31、 40、 51 微細流路  11, 31, 40, 51 Fine channel

12、 21、 32、 70 塗布溶液  12, 21, 32, 70 Coating solution

13、 14、 22、 23、 33、 52、 61. 71 SiO膜  13, 14, 22, 23, 33, 52, 61.71 SiO film

2  2

発明を実施するための最良の形態  BEST MODE FOR CARRYING OUT THE INVENTION

[0026] [第 1の実施の形態]  [First Embodiment]

この発明の第 1実施形態に係るマイクロチップ基板の接合方法、及びその方法によ り製造されたマイクロチップについて、図 1を参照して説明する。図 1は、この発明の 第 1実施形態に係るマイクロチップ基板の接合方法を説明するためのマイクロチップ 基板の断面図である。  A microchip substrate bonding method according to a first embodiment of the present invention and a microchip manufactured by the method will be described with reference to FIG. FIG. 1 is a cross-sectional view of a microchip substrate for explaining a method of bonding microchip substrates according to the first embodiment of the present invention.

[0027] 図 1 (a)に示すように、マイクロチップ基板 10の表面には溝状の微細流路 11が形成 されている。マイクロチップ基板 10の接合の相手方となるマイクロチップ基板 20は、 平板状の基板である。微細流路 11が形成されている面を内側にして、マイクロチップ 基板 10とマイクロチップ基板 20を接合することで、マイクロチップ基板 20が微細流路 11の蓋 (カバー）として機能し、マイクロチップが製造される。なお、マイクロチップ基 板 10、 20が、この発明の「樹脂製部材」の 1例に相当する。 As shown in FIG. 1 (a), a groove-shaped fine channel 11 is formed on the surface of the microchip substrate 10. The microchip substrate 20 that is the counterpart to which the microchip substrate 10 is joined is a flat substrate. By connecting the microchip substrate 10 and the microchip substrate 20 with the surface on which the microchannel 11 is formed facing inward, the microchip substrate 20 becomes a microchannel. It functions as an 11 lid and a microchip is manufactured. The microchip substrates 10 and 20 correspond to an example of the “resin member” of the present invention.

[0028] マイクロチップ基板 10、 20には樹脂が用いられる。その樹脂としては、成形性 (転 写性、離型性）が良いこと、透明性が高いこと、紫外線や可視光に対する自己蛍光性 が低いことなどが条件として挙げられる力 S、特に限定されるものではない。例えば、ポ リカーボネート、ポリメタクリル酸メチル、ポリスチレン、ポリアクリロニトリル、ポリ塩化ビ ニル、ポリエチレンテレフタレート、ナイロン 6、ナイロン 66、ポリ酢酸ビュル、ポリ塩化 ビニリデン、ポリプロピレン、ポリイソプレン、ポリエチレン、ポリジメチルシロキサン、環 状ポリオレフインなどが好ましい。特に、ポリメタクリル酸メチル、環状ポリオレフインな どが好ましい。マイクロチップ基板 10とマイクロチップ基板 20とで、同じ材料を用いて もよぐ、異なる材料を用いてもよい。  A resin is used for the microchip substrates 10 and 20. The resin is particularly limited in terms of force S, such as good moldability (transferability, releasability), high transparency, and low autofluorescence for ultraviolet light and visible light. It is not a thing. For example, polycarbonate, polymethyl methacrylate, polystyrene, polyacrylonitrile, polyvinyl chloride, polyethylene terephthalate, nylon 6, nylon 66, polybutyl acetate, polyvinylidene chloride, polypropylene, polyisoprene, polyethylene, polydimethylsiloxane, ring Polyolefins are preferred. Particularly preferred are polymethyl methacrylate and cyclic polyolefin. The microchip substrate 10 and the microchip substrate 20 may use the same material or different materials.

[0029] マイクロチップ基板 10、 20の形状は、ハンドリング、分析しやすい形状であればど のような形状であってもよい。例えば、 10mm角〜 200mm角程度の大きさが好ましく 、 10mm角〜 100mm角がより好ましい。マイクロチップ基板 10、 20の形状は、分析 手法、分析装置に合わせればよぐ正方形、長方形、円形などの形状が好ましい。  [0029] The shape of the microchip substrates 10 and 20 may be any shape as long as it is easy to handle and analyze. For example, a size of about 10 mm square to 200 mm square is preferable, and 10 mm square to 100 mm square is more preferable. The shape of the microchip substrates 10 and 20 is preferably a square, rectangle, circle or the like according to the analysis method and analysis apparatus.

[0030] 微細流路 11の形状は、分析試料、試薬の使用量を少なくできること、成形金型の 作製精度、転写性、離型性などを考慮して、幅、深さともに、 10 111〜200 111の範 囲内の値であることが好ましいが、特に限定されるものではない。また、アスペクト比（ 溝の深さ/溝の幅）は、 0. ；!〜 3程度が好ましぐ 0. 2〜2程度がより好ましい。また、 微細流路 11の幅と深さは、マイクロチップの用途によって決めればよい。なお、説明 を簡便にするために、図 1に示す微細流路 11の断面の形状は矩形状となって!/、るが 、この形状は微細流路 11の 1例であり、曲面状となっていても良い。  [0030] The shape of the microchannel 11 is 10 111 to both in width and depth in consideration of the fact that the amount of analysis sample and reagent used can be reduced, and the fabrication accuracy of the mold, transferability, releasability, etc. The value is preferably within the range of 200 111, but is not particularly limited. In addition, the aspect ratio (groove depth / groove width) is preferably about 0.2;! ~ 3, more preferably about 0.2 ~ 2. Further, the width and depth of the fine channel 11 may be determined according to the use of the microchip. In order to simplify the explanation, the cross-sectional shape of the microchannel 11 shown in FIG. 1 is a rectangular shape! / However, this shape is an example of the microchannel 11 and is a curved surface. It may be.

[0031] また、微細流路 11が形成されたマイクロチップ基板 10の板厚は、成形性を考慮し て、 0. 2mm〜 5mm程度が好ましぐ 0. 5mm〜2mmがより好ましい。微細流路 11 を覆うための蓋 (カバー）として機能するマイクロチップ基板 20の板厚は、成形性を考 慮して、 0. 2mm〜 5mm程度が好ましぐ 0. 5mm〜2mmがより好ましい。また、蓋（ カバー）として機能するマイクロチップ基板 20に微細流路を形成しない場合、板状の 部材ではなぐフィルム状の樹脂製部材 (シート状の部材）を用いてもよい。この場合 、フイノレムの厚さは、 30 μ m〜300 μ mであることカ好ましく、 50 μ m~150 μ mであ ることがより好ましい。 [0031] The thickness of the microchip substrate 10 on which the microchannel 11 is formed is preferably about 0.2 mm to 5 mm, more preferably 0.5 mm to 2 mm in consideration of formability. The thickness of the microchip substrate 20 functioning as a lid (cover) for covering the microchannel 11 is preferably about 0.2 mm to 5 mm, more preferably 0.5 mm to 2 mm in consideration of formability. . Further, when the microchannel is not formed in the microchip substrate 20 functioning as a lid (cover), a film-like resin member (sheet-like member) that is not a plate-like member may be used. in this case The thickness of the finolem is preferably 30 μm to 300 μm, and more preferably 50 μm to 150 μm.

[0032] そして、図 1 (b)に示すように、マイクロチップ基板 10に対しては、微細流路 11が形 成されている面に、硬化後に SiOが主成分となる塗布溶液 12を塗布し、マイクロチッ  [0032] Then, as shown in FIG. 1 (b), a coating solution 12 containing SiO as a main component after curing is applied to the surface of the microchip substrate 10 on which the microchannels 11 are formed. And microchip

2  2

プ基板 20の表面に、硬化後に SiOが主成分となる塗布溶液 21を塗布する。マイク  A coating solution 21 containing SiO as a main component after curing is applied to the surface of the substrate 20. Microphone

2  2

口チップ基板 10に対しては、微細流路 11の内面にも塗布溶液 21を塗布する。  The coating solution 21 is also applied to the inner surface of the fine channel 11 for the mouth chip substrate 10.

(硬化後に SiOが主成分となる塗布溶液の具体例）  (Specific examples of coating solutions containing SiO as the main component after curing)

2  2

塗布溶液としては、例えば、アルコキシシランを加水分解、縮重合して得られるポリ シロキサンオリゴマーをアルコール溶媒に溶力、したものを用いる。塗布溶液を加熱し てアルコール溶媒を揮発させると、 SiO膜が形成される。具体的には、 JSR社製のグ  As the coating solution, for example, a solution obtained by dissolving a polysiloxane oligomer obtained by hydrolysis and condensation polymerization of alkoxysilane in an alcohol solvent is used. When the coating solution is heated to volatilize the alcohol solvent, a SiO film is formed. Specifically, a group made by JSR

2  2

ラス力 7003や、コルコート社製のメチルシリケート 51などが挙げられる。  Examples include lath force 7003 and methyl silicate 51 manufactured by Colcoat.

[0033] また、パーヒドロポリシラザンをキシレン、ジブチルエーテル溶媒に溶かしたものを塗 布溶液に用いる。この場合、塗布溶液を加熱して溶媒を揮発させると同時に水と反 応させて、 SiO膜を形成する。具体的には、 AZエレクトロニックマテリアルズ社製の [0033] Further, perhydropolysilazane dissolved in xylene and dibutyl ether solvent is used for the coating solution. In this case, the coating solution is heated to volatilize the solvent and at the same time react with water to form a SiO film. Specifically, manufactured by AZ Electronic Materials

2  2

アクアミカなどが挙げられる。  Examples include aquamica.

[0034] また、アルコキシシリル基含有ポリマーとアルコキシシランを加水分解.共縮合して 得られる無機一有機ハイブリッドポリマーをアルコール溶媒に溶力、したものを塗布溶 液に用いる。この場合、加熱してアルコール溶媒を揮発させ、 SiOが主成分となるハ [0034] In addition, an inorganic mono-organic hybrid polymer obtained by hydrolyzing and co-condensing an alkoxysilyl group-containing polymer and alkoxysilane is used as a coating solution by dissolving it in an alcohol solvent. In this case, the alcohol solvent is volatilized by heating, and the main component is SiO.

2  2

イブリツド膜を形成する。具体的には、 JSR社製のグラス力 7506などが挙げられる。 (塗布溶液 12、 21の塗布方法）  An hybrid film is formed. Specifically, JSR's glass power 7506 and the like can be mentioned. (Coating method for coating solutions 12 and 21)

塗布溶液 12、 21をマイクロチップ基板 10、 20に均一に塗布することが重要である 。塗布溶液 12、 21の物性 (粘度、揮発性、表面張力、ぬれ性)を考慮し、塗布方法を 適宜選択する。例えば、デイツビング、スプレーコーティング、スピンコーティング、スリ ットコーティング、スクリーン印刷、パッド印刷、インクジェット印刷などが挙げられる。  It is important to uniformly apply the coating solutions 12 and 21 to the microchip substrates 10 and 20. Consider the physical properties (viscosity, volatility, surface tension, wettability) of coating solutions 12 and 21, and select the coating method as appropriate. Examples include date bubbling, spray coating, spin coating, slit coating, screen printing, pad printing, and ink jet printing.

[0035] また、塗布溶液 12、 21の膜厚は、微細流路 11の内面がすべて SiOで覆われるこ [0035] The thickness of the coating solutions 12 and 21 is such that the entire inner surface of the fine channel 11 is covered with SiO.

2  2

と、微細流路 11の内面への密着度が確保できること、微細流路 11を塞いでしまわな いこと、などを考慮して決定する。塗布溶液 12、 21の特性、種類に応じて膜厚を調 整する。例えば、 101 111〜3 111の範囲内の値であることが好ましぐ 10nm~2 iu m の範囲内の値であることがより好ましい。 In addition, it is determined taking into consideration that the degree of adhesion to the inner surface of the fine channel 11 can be secured and that the fine channel 11 is not blocked. Adjust the film thickness according to the characteristics and type of coating solutions 12 and 21. For example, a value in the range of 101 111 to 3 111 is preferred 10 nm to 2 i um A value within the range is more preferable.

[0036] そして、図 1 (c)に示すように、微細流路 11を内側にしてマイクロチップ基板 10とマ イク口チップ基板 20を重ねる。この段階では、塗布溶液 12、 21は硬化されていない ため、マイクロチップ基板 10とマイクロチップ基板 20は、塗布溶液 12、 21によって接 着されることになる。マイクロチップ基板 10とマイクロチップ基板 20を重ねた後、塗布 溶液 12、 21を硬化させることで、 SiO膜 13、 22を形成する。例えば、熱硬化性の塗 [0036] Then, as shown in FIG. 1 (c), the microchip substrate 10 and the microphone port chip substrate 20 are overlapped with the fine channel 11 inside. At this stage, since the coating solutions 12 and 21 are not cured, the microchip substrate 10 and the microchip substrate 20 are attached by the coating solutions 12 and 21. After the microchip substrate 10 and the microchip substrate 20 are stacked, the coating solutions 12 and 21 are cured to form SiO films 13 and 22. For example, thermosetting coating

2  2

布溶液を用いた場合は、熱処理を施すことにより塗布溶液 12、 21を硬化させて、 Si O膜 13、 22を形成する。塗布溶液 12、 21は接着剤として機能し、硬化させることで When a cloth solution is used, the coating solutions 12 and 21 are cured by heat treatment to form the SiO 2 films 13 and 22. Coating solutions 12, 21 function as an adhesive and can be cured

2 2

、マイクロチップ基板 10とマイクロチップ基板 20を接合することが可能となる。これに より、マイクロチップが製造されたことになる。マイクロチップ基板 10とマイクロチップ 基板 20との間には、 SiO膜 13、 22が介在するだけで、従来のように、接着剤などの  Thus, the microchip substrate 10 and the microchip substrate 20 can be bonded. As a result, a microchip is manufactured. Between the microchip substrate 10 and the microchip substrate 20, only SiO films 13 and 22 are interposed.

2  2

物質は介在しないことになる。  There will be no intervening material.

(塗布溶液 12、 21の硬化方法）  (Curing method for coating solutions 12 and 21)

塗布溶液 12、 21を硬化させて SiO膜を形成する際には、塗布溶液 12、 21の溶媒  When the coating solutions 12, 21 are cured to form a SiO film, the solvent of the coating solutions 12, 21

2  2

を十分に揮発させ、 SiOの強固なネットワークを形成できることが望ましい。塗布溶  It is desirable to sufficiently volatilize and form a strong SiO network. Coating solution

2  2

液 12、 21の物性 (粘度、揮発性、触媒)を考慮し、硬化方法を適宜選択する。例えば 、常温で塗布溶液 12、 21を放置して硬化させたり、塗布溶液 12、 21を 60°C〜； 100 °Cの温度で加熱することで硬化させたり、塗布溶液 12、 21を高温高湿下（温度 60°C で湿度 90%、温度 80°Cで湿度 90%など）で硬化させたりする。また、 UV硬化や、可 視光硬化などを利用して塗布溶液 12、 21を硬化させても良レ、。  The curing method is appropriately selected in consideration of the physical properties (viscosity, volatility, catalyst) of liquids 12 and 21. For example, the coating solutions 12, 21 are allowed to cure at room temperature, the coating solutions 12, 21 are cured by heating at a temperature of 60 ° C to 100 ° C, or the coating solutions 12, 21 are heated at a high temperature. Curing under humidity (such as 90% humidity at 60 ° C, 90% humidity at 80 ° C). It is also possible to cure the coating solutions 12, 21 using UV curing or visible light curing.

[0037] 以上のように、硬化後に SiOが主成分となる塗布溶液 12、 21をマイクロチップ基 [0037] As described above, the coating solutions 12 and 21 containing SiO as a main component after curing are applied to the microchip substrate.

2  2

板 10、 20に塗布し、その塗布溶液 12、 21を接着剤として機能させることで、マイクロ チップ基板 10とマイクロチップ基板 20を接合することが可能となる。さらに、微細流路 11の内面にも塗布溶液 12を塗布して硬化させることで、微細流路 11の内面に親水 性の機能を持った SiO膜を形成することが可能となる。このように、第 1実施形態に  It is possible to bond the microchip substrate 10 and the microchip substrate 20 by applying them to the plates 10 and 20 and causing the coating solutions 12 and 21 to function as adhesives. Furthermore, by applying the coating solution 12 to the inner surface of the microchannel 11 and curing it, it is possible to form a SiO film having a hydrophilic function on the inner surface of the microchannel 11. Thus, in the first embodiment

2  2

係る接合方法によると、微細流路 11の内面に SiO膜を形成するとともに、マイクロチ  According to such a joining method, an SiO film is formed on the inner surface of the fine channel 11 and the micro

2  2

ップ基板 10とマイクロチップ基板 20を接合することが可能となるため、親水性処理と 接合処理の 2つの工程を 1つの工程で行うことが可能となる。 [0038] SiO膜は親水性機能を有するため、タンパク質などの低分子や高分子の微細流Since the substrate 10 and the microchip substrate 20 can be bonded, it is possible to perform the two steps of hydrophilic processing and bonding processing in one step. [0038] Since the SiO film has a hydrophilic function, a small flow of a low molecule such as protein or a polymer

2 2

路 11の壁面への付着を抑制することが可能となる。マイクロチップ基板 10、 20は樹 脂で構成されているため、通常、疎水性であり、タンパク質などの低分子や高分子は 、微細流路 11に付着しやすいが、 SiO膜を形成することで、その付着を抑制するこ  It is possible to suppress adhesion of the road 11 to the wall surface. Since the microchip substrates 10 and 20 are made of resin, they are usually hydrophobic, and low molecules and polymers such as proteins tend to adhere to the microchannel 11, but by forming a SiO film, Suppresses its adhesion

2  2

とが可能となる。  Is possible.

[0039] また、 SiO膜は化学的に安定であるため、親水性機能を安定的に持続させること  [0039] Since the SiO film is chemically stable, the hydrophilic function must be stably maintained.

2  2

ができる。樹脂製のマイクロチップ基板 10、 20の表面をプラズマ処理することで親水 化処理することができる力 効果が時間とともに減少してしまい、数日で親水性の機 能がなくなる場合が多い。また、マイクロチップ基板 10、 20の表面にオリゴエチレン グリコールや 2—メタクリロイルォキシェチルホスホリルコリンなどの高分子をデイツピン グなどにより表面修飾し、親水化処理することも可能であるが、表面修飾基の吸着力 が弱い、ムラが発生するなどが原因となって、均一な親水性の表面が得られない場 合がある。  Can do. By applying plasma treatment to the surface of the resin-made microchip substrates 10 and 20, the force effect that can be hydrophilized decreases with time, and the hydrophilic function is often lost within a few days. It is also possible to modify the surface of the microchip substrate 10 or 20 with a polymer such as oligoethylene glycol or 2-methacryloyloxychetyl phosphorylcholine by dipping or the like to make it hydrophilic. A uniform hydrophilic surface may not be obtained due to weak adsorption force or unevenness.

[0040] これに対して、 SiO膜を微細流路 11が形成されたマイクロチップ基板 10と、蓋（力  In contrast to this, the microchip substrate 10 on which the fine flow path 11 is formed with the SiO film and the lid (force

2  2

バー）として機能するマイクロチップ基板 20に形成することで、マイクロチップ基板 10 とマイクロチップ基板 20の樹脂素材が異なる場合でも、同一の表面状態を形成する ことが可能となる。そのことにより、分析の正確性、信頼性を増加することが可能となる 。基板の表面状態が異なると、分析する液体の流速や反応にばらつきが発生してし まい、分析チップの検出感度が低下してしまう問題がある。 SiO膜を微細流路 11の  By forming the microchip substrate 20 functioning as a bar), the same surface state can be formed even when the resin materials of the microchip substrate 10 and the microchip substrate 20 are different. As a result, the accuracy and reliability of the analysis can be increased. If the surface condition of the substrate is different, there will be variations in the flow rate and reaction of the liquid to be analyzed, and the detection sensitivity of the analysis chip will be reduced. The SiO membrane is made into a fine channel 11

2  2

内面に形成することで、ばらつきの発生を抑え、分析チップの検出感度を向上させる ことが可能となる。  By forming it on the inner surface, it is possible to suppress the occurrence of variations and improve the detection sensitivity of the analysis chip.

[0041] 第 1実施形態においては、微細流路 11が形成されたマイクロチップ基板 10と、微 細流路 11を覆うためのカバーとして機能する平板状のマイクロチップ基板 20の両基 板に塗布溶液を塗布して SiO膜を形成した力 いずれか一方のマイクロチップ基板  In the first embodiment, the coating solution is applied to both substrates of the microchip substrate 10 in which the microchannel 11 is formed and the flat microchip substrate 20 that functions as a cover for covering the microchannel 11. The force that applied SiO2 to form the SiO film Either microchip substrate

2  2

に塗布溶液を塗布して、マイクロチップ基板 10とマイクロチップ基板 20を接合しても 良い。以下、第 1実施形態の変形例として、いずれか一方のマイクロチップ基板に塗 布溶液を塗布する例につ!/、て説明する。  The microchip substrate 10 and the microchip substrate 20 may be bonded to each other by applying a coating solution. Hereinafter, as a modification of the first embodiment, an example in which a coating solution is applied to one of the microchip substrates will be described.

[変形例 1] 第 1実施形態に係るマイクロチップ基板の接合方法の変形例 1、及びその方法によ り製造されるマイクロチップについて、図 2を参照して説明する。図 2は、変形例 1に係 るマイクロチップ基板の接合方法を説明するためのマイクロチップ基板の断面図であ [Modification 1] A modification 1 of the bonding method of the microchip substrates according to the first embodiment and a microchip manufactured by the method will be described with reference to FIG. FIG. 2 is a cross-sectional view of a microchip substrate for explaining the microchip substrate bonding method according to Modification 1.

[0042] 図 2 (a)に示すように、第 1実施形態と同様に、基板表面に微細流路 11が形成され たマイクロチップ基板 10と、平板状のマイクロチップ基板 20を用意する。 As shown in FIG. 2 (a), as in the first embodiment, a microchip substrate 10 having a microchannel 11 formed on the substrate surface and a flat microchip substrate 20 are prepared.

[0043] 図 2 (b)に示すように、変形例 1では、マイクロチップ基板 10とマイクロチップ基板 2 0を重ねる前に、平板状のマイクロチップ基板 20の表面に SiO膜 23を形成する。例  As shown in FIG. 2B, in Modification 1, before the microchip substrate 10 and the microchip substrate 20 are stacked, the SiO film 23 is formed on the surface of the flat microchip substrate 20. Example

2  2

えば、 CVDで SiO膜 23を形成したり、硬化後に SiOが主成分となる塗布溶液を基  For example, a SiO film 23 can be formed by CVD, or a coating solution containing SiO as a main component after curing can be used.

2 2  twenty two

板表面に塗布し、その後硬化させて SiO膜 23を形成したりする。一方、微細流路 11  It is applied to the plate surface and then cured to form the SiO film 23. On the other hand, the fine channel 11

2  2

が形成されたマイクロチップ基板 10に対しては、第 1実施形態と同様に、微細流路 1 1が形成されている面に、硬化後に SiOが主成分となる塗布溶液 12を塗布する。  In the same manner as in the first embodiment, a coating solution 12 containing SiO as a main component after curing is applied to the surface on which the microchannel 11 is formed, on the microchip substrate 10 on which is formed.

2  2

[0044] そして、図 2 (c)に示すように、微細流路 11を内側にしてマイクロチップ基板 10とマ イク口チップ基板 20を重ねる。この段階では、塗布溶液 12は硬化されていないため、 マイクロチップ基板 10とマイクロチップ基板 20は、塗布溶液 12によって接着されるこ とになる。基板同士を重ねた後、塗布溶液 12を硬化させることで、 SiO膜 13を形成  [0044] Then, as shown in FIG. 2 (c), the microchip substrate 10 and the mic chip substrate 20 are overlapped with the fine channel 11 inside. At this stage, since the coating solution 12 is not cured, the microchip substrate 10 and the microchip substrate 20 are bonded by the coating solution 12. After stacking the substrates, the coating solution 12 is cured to form the SiO film 13.

2  2

する。塗布溶液 12は接着剤として機能し、硬化させることで、マイクロチップ基板 10と マイクロチップ基板 20を接合することが可能となる。これにより、マイクロチップが製造 されたことになる。マイクロチップ基板 10とマイクロチップ基板 20との間には、 SiO膜  To do. The coating solution 12 functions as an adhesive and can be cured to bond the microchip substrate 10 and the microchip substrate 20 together. As a result, the microchip is manufactured. Between the microchip substrate 10 and the microchip substrate 20, there is an SiO film

2 2

13、 23が介在するだけで、従来のように、接着剤などの物質は介在しないことになるJust by interposing 13 and 23, there will be no substance such as adhesive as in the past.

〇 Yes

[0045] 以上のように、硬化後に SiOが主成分となる塗布溶液 12を、一方のマイクロチップ  [0045] As described above, the coating solution 12 containing SiO as a main component after curing is applied to one microchip.

2  2

基板 10に塗布した場合であっても、その塗布溶液 12を接着剤として機能させること ができ、マイクロチップ基板 10とマイクロチップ基板 20を接合することが可能となる。 さらに、微細流路 11の内面にも塗布溶液 12を塗布して硬化させることで、微細流路 11の内面に親水性の機能を持った SiO膜を形成することが可能となる。このように、  Even when applied to the substrate 10, the coating solution 12 can function as an adhesive, and the microchip substrate 10 and the microchip substrate 20 can be bonded. Furthermore, by applying the coating solution 12 to the inner surface of the microchannel 11 and curing it, it is possible to form a SiO film having a hydrophilic function on the inner surface of the microchannel 11. in this way,

2  2

変形例 1に係る接合方法によると、微細流路 11の内面に SiO膜を形成するとともに  According to the joining method according to the modified example 1, the SiO film is formed on the inner surface of the fine channel 11 and

2  2

、マイクロチップ基板 10とマイクロチップ基板 20を接合することが可能となるため、親 水性処理と接合処理の 2つの工程を 1つの工程で行うことが可能となる。 Since the microchip substrate 10 and the microchip substrate 20 can be bonded, It is possible to perform the two steps of aqueous treatment and bonding treatment in one step.

[変形例 2]  [Variation 2]

次に、第 1実施形態に係るマイクロチップ基板の接合方法の変形例 2、及びその方 法によって製造されるマイクロチップについて、図 3を参照して説明する。図 3は、変 形例 2に係るマイクロチップ基板の接合方法を説明するためのマイクロチップ基板の 断面図である。上記変形例 1では、微細流路 11が形成されたマイクロチップ基板 10 に、硬化後に SiOが主成分となる塗布溶液 12を塗布して SiO膜を形成した力 変  Next, a second modification of the microchip substrate bonding method according to the first embodiment and a microchip manufactured by the method will be described with reference to FIG. FIG. 3 is a cross-sectional view of a microchip substrate for explaining a bonding method of the microchip substrate according to the second modification. In the above-described modification 1, the force is changed by applying the coating solution 12 mainly composed of SiO after curing to the microchip substrate 10 on which the microchannel 11 is formed to form the SiO film.

2 2  twenty two

形例 2では、接合の相手方となるマイクロチップ基板 20に塗布液 21を塗布し、マイク 口チップ基板 10には、基板同士を重ねる前に、 SiO膜を形成した。  In the example 2, the coating liquid 21 was applied to the microchip substrate 20 to be bonded, and the SiO2 film was formed on the microphone tip chip substrate 10 before the substrates were stacked.

2  2

[0046] 図 3 (a)に示すように、第 1実施形態と同様に、基板表面に微細流路 11が形成され たマイクロチップ基板 10と、平板状のマイクロチップ基板 20を用意する。  As shown in FIG. 3 (a), as in the first embodiment, a microchip substrate 10 having a microchannel 11 formed on the substrate surface and a flat microchip substrate 20 are prepared.

[0047] 図 3 (b)に示すように、変形例 2では、マイクロチップ基板 10とマイクロチップ基板 2 0を重ねる前に、微細流路 11が形成されたマイクロチップ基板 10の表面に SiO膜 1  As shown in FIG. 3 (b), in Modification 2, before the microchip substrate 10 and the microchip substrate 20 are stacked, the SiO film is formed on the surface of the microchip substrate 10 on which the microchannel 11 is formed. 1

2 2

4を形成する。例えば、 CVDで SiO膜 14を形成したり、硬化後に SiOが主成分とな Form 4. For example, SiO film 14 is formed by CVD, or SiO is the main component after curing.

2 2  twenty two

る塗布溶液を基板表面に塗布し、その後硬化して SiO膜 14を形成したりする。この  A coating solution is applied to the substrate surface and then cured to form the SiO film 14. this

2  2

とき、微細流路 11の内面にも SiO膜 14を形成する。一方、平板状のマイクロチップ  In some cases, the SiO film 14 is also formed on the inner surface of the fine channel 11. On the other hand, flat microchip

2  2

基板 20には、第 1実施形態と同様に、硬化後に SiOが主成分となる塗布溶液 21を  As in the first embodiment, the substrate 20 is coated with a coating solution 21 containing SiO as a main component after curing.

2  2

塗布する。  Apply.

[0048] そして、図 3 (c)に示すように、微細流路 11を内側にしてマイクロチップ基板 10とマ イク口チップ基板 20を重ねる。この段階では、塗布溶液 21は硬化されていないため、 マイクロチップ基板 10とマイクロチップ基板 20は、塗布溶液 21によって接着されるこ とになる。基板同士を重ねた後、塗布溶液 21を硬化させることで、 SiO膜 22を形成  [0048] Then, as shown in FIG. 3 (c), the microchip substrate 10 and the mic chip substrate 20 are overlapped with the fine channel 11 inside. At this stage, since the coating solution 21 is not cured, the microchip substrate 10 and the microchip substrate 20 are bonded together by the coating solution 21. After stacking the substrates, the coating solution 21 is cured to form the SiO film 22.

2  2

する。塗布溶液 21は接着剤として機能し、硬化させることで、マイクロチップ基板 10と マイクロチップ基板 20を接合することが可能となる。これにより、マイクロチップが製造 されたことになる。マイクロチップ基板 10とマイクロチップ基板 20との間には、 SiO膜  To do. The coating solution 21 functions as an adhesive and can be cured to bond the microchip substrate 10 and the microchip substrate 20 together. As a result, the microchip is manufactured. Between the microchip substrate 10 and the microchip substrate 20, there is an SiO film

2 2

14、 22が介在するだけで、従来のように、接着剤などの物質は介在しないことになる14 and 22 are intervening, and materials such as adhesives are not intervening as in the past.

〇 Yes

[0049] 以上のように、硬化後に SiOが主成分となる塗布溶液 12を、一方のマイクロチップ 基板 20に塗布した場合であっても、その塗布溶液 21を接着剤として機能させること ができ、マイクロチップ基板 10とマイクロチップ基板 20を接合することが可能となる。 [0049] As described above, the coating solution 12 containing SiO as a main component after curing is applied to one microchip. Even when applied to the substrate 20, the coating solution 21 can function as an adhesive, and the microchip substrate 10 and the microchip substrate 20 can be bonded.

[第 2の実施の形態]  [Second Embodiment]

次に、この発明の第 2実施形態に係るマイクロチップ基板の接合方法、及びその方 法によって製造されるマイクロチップについて、図 4を参照して説明する。図 4は、この 発明の第 2実施形態に係るマイクロチップ基板の接合方法を説明するためのマイクロ チップ基板の断面図である。第 1実施形態では、一方のマイクロチップ基板のみに微 細流路を形成したが、第 2実施形態では、両方のマイクロチップ基板に微細流路を 形成した。  Next, a microchip substrate bonding method according to a second embodiment of the present invention and a microchip manufactured by the method will be described with reference to FIG. FIG. 4 is a cross-sectional view of a microchip substrate for explaining a method for bonding microchip substrates according to a second embodiment of the present invention. In the first embodiment, the fine flow path is formed only on one of the microchip substrates, but in the second embodiment, the fine flow paths are formed on both microchip substrates.

[0050] 図 4 (a)に示すように、表面に微細流路 11が形成されたマイクロチップ基板 10と、 同じぐ表面に微細流路 31が形成されたマイクロチップ基板 30を用意する。微細流 路 11、 31を内側にしてマイクロチップ基板 10とマイクロチップ基板 30を接合すること で、より深い微細流路を形成する。  As shown in FIG. 4 (a), a microchip substrate 10 having a microchannel 11 formed on the surface and a microchip substrate 30 having a microchannel 31 formed on the same surface are prepared. By connecting the microchip substrate 10 and the microchip substrate 30 with the microchannels 11 and 31 inside, a deeper microchannel can be formed.

[0051] そして、図 4 (b)に示すように、マイクロチップ基板 10に対しては、微細流路 11が形 成された面に、硬化後に SiOが主成分となる塗布溶液 12を塗布し、マイクロチップ  [0051] As shown in FIG. 4 (b), a coating solution 12 containing SiO as a main component after curing is applied to the surface on which the microchannel 11 is formed on the microchip substrate 10. , Microchip

2  2

基板 30に対しても、微細流路 31が形成された面に、硬化後に SiOが主成分となる  Also on the substrate 30, the surface on which the fine flow path 31 is formed has SiO as a main component after curing.

2  2

塗布溶液 32を塗布する。両基板に対しても、微細流路 11、 31の内面にも塗布溶液 12、 32を塗布する。  Apply coating solution 32. The coating solutions 12 and 32 are also applied to the inner surfaces of the microchannels 11 and 31 for both substrates.

[0052] そして、図 4 (c)に示すように、微細流路 11、 31を内側にしてマイクロチップ基板 10 とマイクロチップ基板 30を重ねる。このとき、微細流路 11、 31の位置合わせを行って 、微細流路 11と微細流路 31が同じ位置に重なるようにする。この段階では、塗布溶 液 12、 32は硬化されていないため、マイクロチップ基板 10とマイクロチップ基板 30 は、塗布溶液 12、 32によって接着されることになる。マイクロチップ基板 10とマイクロ チップ基板 30を重ねた後、塗布溶液 12、 32を硬化させることで、 SiO膜 13、 33を  Then, as shown in FIG. 4 (c), the microchip substrate 10 and the microchip substrate 30 are overlapped with the fine flow paths 11 and 31 inside. At this time, the fine channels 11 and 31 are aligned so that the fine channel 11 and the fine channel 31 overlap at the same position. At this stage, since the coating solutions 12 and 32 are not cured, the microchip substrate 10 and the microchip substrate 30 are bonded by the coating solutions 12 and 32. After the microchip substrate 10 and the microchip substrate 30 are stacked, the coating films 12 and 32 are cured to form the SiO films 13 and 33.

2  2

形成する。塗布溶液 12、 32は接着剤として機能し、硬化させることで、マイクロチップ 基板 10とマイクロチップ基板 30を接合することが可能となる。この接合によって、溝 のアスペクト比が大きい微細流路 40を形成することが可能となる。  Form. The coating solutions 12 and 32 function as an adhesive and can be cured to bond the microchip substrate 10 and the microchip substrate 30 together. By this bonding, it is possible to form a fine channel 40 having a large groove aspect ratio.

[0053] また、この第 2実施形態では、マイクロチップ基板 10とマイクロチップ基板 30の両基 板に、塗布溶液を塗布したが、上述した変形例 1、 2と同様に、いずれか一方のマイク 口チップ基板に塗布溶液を塗布して、マイクロチップ基板同士を接合しても良い。 In the second embodiment, both the microchip substrate 10 and the microchip substrate 30 are Although the coating solution is applied to the plate, the microchip substrates may be bonded to each other by applying the coating solution to any one of the microphone chip substrates as in the first and second modifications.

[第 3の実施の形態]  [Third embodiment]

次に、この発明の第 3実施形態に係るマイクロチップ基板の接合方法、及びその方 法によって製造されるマイクロチップについて、図 5を参照して説明する。図 5は、この 発明の第 3実施形態に係るマイクロチップ基板の接合方法を説明するためのマイクロ チップ基板の断面図である。  Next, a microchip substrate bonding method according to a third embodiment of the present invention and a microchip manufactured by the method will be described with reference to FIG. FIG. 5 is a cross-sectional view of a microchip substrate for explaining a microchip substrate bonding method according to a third embodiment of the present invention.

[0054] 図 5 (a)に示すように、微細流路 51が形成されたマイクロチップ基板 50と、平板状 のマイクロチップ基板 60を用意する。マイクロチップ基板 50には微細流路 51が形成 されている面に SiO膜 52が予め形成されており、マイクロチップ基板 60にも SiO膜 As shown in FIG. 5 (a), a microchip substrate 50 on which a microchannel 51 is formed and a flat microchip substrate 60 are prepared. The microchip substrate 50 has a SiO film 52 formed in advance on the surface on which the microchannel 51 is formed, and the microchip substrate 60 also has an SiO film.

2 2 twenty two

61が予め形成されている。例えば、 CVDで SiO膜 52、 61を形成したり、硬化後に S 61 is pre-formed. For example, SiO films 52 and 61 are formed by CVD, or after curing, S

2  2

ΪΟ膜 52、 61となる塗布溶液を基板表面に塗布し、その後硬化して SiO膜 52、 61 The coating solution that forms the coating film 52, 61 is applied to the substrate surface, and then cured to form a SiO film 52, 61.

2 2 を形成したりしても良い。 2 2 may be formed.

[0055] そして、図 5 (b)に示すように、例えば、マイクロチップ基板 60の表面（SiO膜 61上 Then, as shown in FIG. 5 (b), for example, the surface of the microchip substrate 60 (on the SiO film 61)

2 2

)に、硬化後に SiOが主成分となる塗布溶液 70を塗布する。この塗布溶液 70を接着 ) Is applied with a coating solution 70 containing SiO as a main component after curing. Glue this coating solution 70

2  2

剤として機能させる。  To function as an agent.

[0056] そして、図 5 (c)に示すように、微細流路 51を内側にしてマイクロチップ基板 50とマ イク口チップ基板 60を重ねる。この段階では、塗布溶液 70は硬化されていないため、 マイクロチップ基板 50とマイクロチップ基板 60は、塗布溶液 70によって接着されるこ とになる。マイクロチップ基板 50とマイクロチップ基板 60を重ねた後、塗布溶液 70を 硬化させることで、 SiO膜 71を形成する。塗布溶液 70は接着剤として機能し、硬化  Then, as shown in FIG. 5 (c), the microchip substrate 50 and the microphone port chip substrate 60 are overlapped with the fine flow path 51 inside. At this stage, since the coating solution 70 is not cured, the microchip substrate 50 and the microchip substrate 60 are bonded together by the coating solution 70. After the microchip substrate 50 and the microchip substrate 60 are stacked, the coating solution 70 is cured to form the SiO film 71. Coating solution 70 functions as an adhesive and cures

2  2

させることで、マイクロチップ基板 50とマイクロチップ基板 60を接合することが可能と なる。これにより、マイクロチップが製造されたことになる。マイクロチップ基板 50とマイ クロチップ基板 60との間には、 SiO膜が介在するだけで、従来のように、接着剤など  By doing so, the microchip substrate 50 and the microchip substrate 60 can be joined. Thereby, the microchip is manufactured. Just like a conventional SiO film between the microchip substrate 50 and the microchip substrate 60, the adhesive, etc.

2  2

の物質は介在しないことになる。  This material will not intervene.

[実施例]  [Example]

次に、具体的な実施例について図 6を参照して説明する。図 6は、各実施例の条件 を示す表である。 (実施例 1) Next, a specific embodiment will be described with reference to FIG. FIG. 6 is a table showing the conditions of each example. (Example 1)

実施例 1では、上記第 1実施形態の具体例を説明する。  In Example 1, a specific example of the first embodiment will be described.

(マイクロチップ基板）  (Microchip substrate)

射出成形機で透明樹脂材料のポリメタクリル酸メチル樹脂（三菱レーヨン製、アタリ ペット VH)を成形し、外开$寸法が 50mm X 50mm X 1mmの板状部材に幅 50 μ m、 深さ 50 mの複数の微細流路と、内径 2mmの複数の貫通孔で構成される流路側マ イク口チップ基板を作製した。この流路側マイクロチップ基板力 S、上記第 1実施形態に おける微細流路 11が形成されたマイクロチップ基板 10に相当する。また、同様に、 外开乡寸法が 50mm X 50mm X lmmのカバー側マイクロチップ基板を作製した。この カバー側マイクロチップ基板力 S、第 1実施形態における蓋 (カバー）として機能するマ イク口チップ基板 20に相当する。  A polymethylmethacrylate resin (Mitsubishi Rayon, Ataripet VH), which is a transparent resin material, is molded using an injection molding machine, and the width is 50 μm and the depth is 50 m on a plate-shaped member with an opening dimension of 50 mm x 50 mm x 1 mm. A channel-side micro-chip chip substrate composed of a plurality of microchannels and a plurality of through-holes having an inner diameter of 2 mm was produced. This flow path-side microchip substrate force S corresponds to the microchip substrate 10 on which the fine flow path 11 in the first embodiment is formed. Similarly, a cover-side microchip substrate having an opening size of 50 mm × 50 mm × lmm was produced. This cover-side microchip substrate force S corresponds to the microphone chip substrate 20 that functions as a lid (cover) in the first embodiment.

(塗布溶液の塗布） (Application of application solution)

上記の流路側マイクロチップ基板とカバー側マイクロチップ基板の接合面に、スプ レーコーター（EVG社製、ナノスプレーコーティング)を使用し、塗布溶液 (JSR社製 、グラス力 7506)を 1 mの厚さになるように調整して塗布した。スプレーコーターを 使用することで、幅 50 m、深さ 50 mの微細流路内部にも均一に塗布溶液を塗 布すること力 Sできた。微細流路内の塗布膜の厚さは 0. 5 mであった。  A spray coater (manufactured by EVG, nanospray coating) is used on the joint surface between the flow path side microchip substrate and the cover side microchip substrate, and the coating solution (JSR, glass force 7506) is 1 m thick. It adjusted so that it might become, and it applied. By using a spray coater, we were able to apply the coating solution evenly inside a fine flow channel with a width of 50 m and a depth of 50 m. The thickness of the coating film in the fine channel was 0.5 m.

(接合） (Joining)

次に、流路側マイクロチップ基板とカバー側マイクロチップ基板の塗布溶液を塗布 した面同士を重ねて、 80°Cのオーブンに 30分間投入して塗布溶液を硬化させ、流 路側マイクロチップ基板とカバー側マイクロチップ基板を接合した。これと同時に、 Si Next, the coated surfaces of the channel-side microchip substrate and the cover-side microchip substrate are overlapped with each other and placed in an 80 ° C. oven for 30 minutes to cure the coating solution, and the channel-side microchip substrate and the cover are covered. The side microchip substrate was bonded. At the same time, Si

O膜が主成分となるハイブリッド膜が形成された。これにより、マイクロチップが作製さA hybrid film composed mainly of an O film was formed. This produced a microchip.

2 2

れたことになる。 That's it.

(評価） (Evaluation)

上記マイクロチップを、シリンジポンプにつなぎ、水を圧送したところ、微細流路から 液体が漏れることなく十分な密封性を示し、水への濡れ性も良ぐ十分な親水性を示 した。なお、液送の圧力は 0. 13MPaとした。  When the above microchip was connected to a syringe pump and water was pumped, it showed sufficient sealing performance without leakage of liquid from the fine channel, and sufficient hydrophilicity with good wettability to water. The liquid feeding pressure was 0.13 MPa.

(実施例 2) 実施例 2では、上記第 1実施形態の具体例を説明する。実施例 2では、カバー側マ イク口チップ基板にフィルムを用いた。 (Example 2) In Example 2, a specific example of the first embodiment will be described. In Example 2, a film was used for the cover-side microphone opening chip substrate.

(マイクロチップ基板） (Microchip substrate)

射出成形機で透明樹脂材料の環状ポリオレフイン樹脂（日本ゼオン社製、ゼォノア )を成形し、外形寸法が 50mmX 50mm X lmmの板状部材に幅 50 111、深さ 50 m、の複数の微細流路と、内径 2mmの複数の貫通孔で構成される流路側マイクロチ ップ基板を作製した。この流路側マイクロチップ基板が、上記第 1実施形態における 微細流路 11が形成されたマイクロチップ基板 10に相当する。また、カバー側マイクロ チップ基板には、透明樹脂フィルム（日本ゼオン社製、ゼォノアフィルム）を流路側マ イク口チップ基板と同様の大きさに切断して使用した。フィルムの厚さは 100 mであ る。このフィルム状のカバー側マイクロチップ基板力 第 1実施形態における蓋 (カバ 一）として機能するマイクロチップ基板 20に相当する。  An injection molding machine is used to mold a cyclic polyolefin resin (Zeon, made by Nippon Zeon Co., Ltd.), and a plate-shaped member with external dimensions of 50 mm x 50 mm x lmm. Then, a flow path side microchip substrate composed of a plurality of through holes having an inner diameter of 2 mm was produced. This flow path side microchip substrate corresponds to the microchip substrate 10 on which the fine flow path 11 in the first embodiment is formed. For the cover side microchip substrate, a transparent resin film (manufactured by Nippon Zeon Co., Ltd., Zeonor film) was cut into the same size as the flow path side microphone port chip substrate. The film thickness is 100 m. This film-like cover-side microchip substrate force corresponds to the microchip substrate 20 functioning as a lid (cover) in the first embodiment.

(塗布溶液の塗布） (Application of application solution)

上記の流路側マイクロチップ基板とカバー側マイクロチップ基板の接合面に、スプ レーコーター（ゥシォ電機社製、 USC— 200ST)を使用し、塗布溶液（AZエレクト口 ニックマテリアルズ社製、アクアミカ）を の厚さになるように調整して塗布した。ス プレーコーターを使用することで、幅 50 H m、深さ 50 H mの微細流路内部にも均一 に塗布溶液を塗布することができた。微細流路内の塗布膜の厚さは 0. 5 mであつ た。  A spray coater (USC-200ST, manufactured by Usio Electric Co., Ltd.) is used on the joint surface between the flow path side microchip substrate and the cover side microchip substrate, and the coating solution (AZ Electric Nick Materials, AQUAMICA) is used. The coating was adjusted to a thickness. By using a spray coater, it was possible to apply the coating solution evenly inside the fine channel with a width of 50 Hm and a depth of 50 Hm. The thickness of the coating film in the microchannel was 0.5 m.

(接合）  (Joining)

次に、流路側マイクロチップ基板とカバー側マイクロチップ基板の塗布溶液を塗布 した面同士を重ねて、 100°Cのオーブンに 1時間投入し、仮硬化させた。この段階で Next, the surfaces of the flow path side microchip substrate and the cover side microchip substrate coated with the coating solution were overlapped and placed in an oven at 100 ° C. for 1 hour to be temporarily cured. At this stage

、流路側マイクロチップ基板とカバー側マイクロチップ基板は強固に接合されている ものの、十分に水と反応できていないため、有機成分を微量ながら含んでいた。そこ で、さらに温度 80°Cで湿度 90%の高温高湿槽に 3時間投入することで、 SiO膜を形 Although the flow path side microchip substrate and the cover side microchip substrate were firmly bonded, they did not sufficiently react with water, and thus contained a small amount of organic components. Therefore, by putting it in a high-temperature and high-humidity tank with a temperature of 80 ° C and a humidity of 90%, the SiO film was formed.

2 成した。これにより、マイクロチップが作製されたことになる。  2 completed. Thereby, the microchip is manufactured.

(評価） (Evaluation)

上記マイクロチップを、シリンジポンプにつなぎ、水を圧送したところ、微細流路から 液体が漏れることなく十分な密封性を示し、水への濡れ性も良ぐ十分な親水性を示 した。なお、液送の圧力は 0. 13MPaとした。 When the above microchip is connected to a syringe pump and water is pumped, It showed sufficient sealing without leakage of liquid and sufficient hydrophilicity with good wettability to water. The liquid feeding pressure was 0.13 MPa.

(実施例 3) (Example 3)

実施例 3では、上記変形例 2の具体例を説明する。実施例 3では、蓋 (カバー）とし て機能する平板状のマイクロチップ基板に塗布溶液を塗布して、基板同士を接合し た。  In Example 3, a specific example of Modification 2 will be described. In Example 3, the coating solution was applied to a flat microchip substrate that functions as a lid (cover), and the substrates were bonded together.

(マイクロチップ基板）  (Microchip substrate)

射出成形機で透明樹脂材料の環状ポリオレフイン樹脂（日本ゼオン社製、ゼォノア )を成形し、外形寸法が 50mmX 50mm X lmmの板状部材に幅 50 111、深さ 50 mの複数の微細流路と、内径 2mmの複数の貫通孔で構成される流路側マイクロチッ プ基板を作製した。この流路側マイクロチップ基板が、上記変形例 2における微細流 路 11が形成されたマイクロチップ基板 10に相当する。また、カバー側マイクロチップ 基板には、透明樹脂フィルム（日本ゼオン社製、ゼォノアフィルム）を使用した。フィル ムの形状は、幅 900mm、厚さ力 00 mでロール状に巻いてある。このフィルム状 のカバー側マイクロチップ基板力 上記変形例 2におけるマイクロチップ基板 20に相 当する。  An injection molding machine is used to form a cyclic polyolefin resin (Zeon Corporation, made by Nippon Zeon Co., Ltd.), and a plate-shaped member with outer dimensions of 50mm x 50mm x lmm. Then, a flow path side microchip substrate composed of a plurality of through holes having an inner diameter of 2 mm was produced. This flow path side microchip substrate corresponds to the microchip substrate 10 in which the fine flow path 11 in the second modification is formed. Further, a transparent resin film (manufactured by Nippon Zeon Co., Ltd., Zeonor film) was used for the cover side microchip substrate. The film is rolled into a roll with a width of 900 mm and a thickness of 00 m. This film-like cover-side microchip substrate force is equivalent to the microchip substrate 20 in Modification 2 above.

(塗布溶液の塗布）  (Application of application solution)

上記流路側マイクロチップ基板の接合面に CVD成膜装置（サムコ社製、 PD— 270 ST)にて、 SiO膜を 150nm形成した。 CVDの原料は、 TEOS (ADEKA社製）を使  A SiO film having a thickness of 150 nm was formed on the bonding surface of the flow path side microchip substrate by a CVD film forming apparatus (PD-270ST, manufactured by Samco). The raw material for CVD is TEOS (made by ADEKA).

2  2

用した。 CVD成膜装置を使用することで、幅 50 111、深さ 50 mの微細流路内部に も均一に SiO膜を形成することができた。微細流路内の SiO膜の厚さは lOOnmで I used it. By using the CVD film deposition system, it was possible to form a uniform SiO film even in the inside of a fine channel with a width of 50 111 and a depth of 50 m. The thickness of the SiO film in the microchannel is lOOnm.

2 2  twenty two

あった。また、カバー側マイクロチップ基板の接合面には、スリットコーターを使用してthere were. Also, use a slit coater on the joint surface of the cover side microchip substrate.

、塗布溶液 (AZエレクトロニックマテリアルズ社製、アクアミカ）を l〃mの厚さになるよ うに調整して塗布した。 Then, the coating solution (manufactured by AZ Electronic Materials, Aquamica) was applied so as to have a thickness of l〃m.

(接合）  (Joining)

次に、流路側マイクロチップ基板の SiO膜を形成した面と、カバー側マイクロチップ  Next, the surface of the flow path side microchip substrate on which the SiO film is formed, and the cover side microchip

2  2

基板の塗布溶液を塗布した面を重ねて、 100°Cのオーブンに 1時間投入し、仮硬化 させた。この段階で、流路側マイクロチップ基板とカバー側マイクロチップ基板は強固 に接合されているものの、十分に水と反応できていないため、有機成分を微量ながら 含んでいた。そこで、さらに温度 80°Cで湿度 90%の高温高湿槽に 3時間投入するこ とで、 SiO膜を形成した。これにより、マイクロチップが作製されたことになる。 The surfaces of the substrate coated with the coating solution were stacked and placed in an oven at 100 ° C for 1 hour for temporary curing. At this stage, the flow path side microchip substrate and the cover side microchip substrate are strong. However, it was not able to react with water sufficiently, so it contained a small amount of organic components. Therefore, the SiO film was formed by placing it in a high-temperature and high-humidity tank with a temperature of 80 ° C and a humidity of 90% for 3 hours. Thereby, the microchip is manufactured.

2  2

以上のような方法でマイクロチップを作製すれば、塗布溶液を微細流路に均一に 塗布することが困難な場合であっても、 CVDなどのドライプロセスを利用することで、 SiO膜を微細流路に均一に形成することが可能となる。さらに、フィルム状のカバー If a microchip is manufactured by the above-described method, even if it is difficult to apply the coating solution uniformly to the fine flow path, the SiO film can be finely flowed by using a dry process such as CVD. It becomes possible to form uniformly in the path. In addition, a film-like cover

2 2

側マイクロチップ基板には、スリットコーターを利用して塗布溶液を塗布することで、 1 度に大面積の塗布溶液を塗布することが可能となる。さらに、大面積のフィルム状の カバー側マイクロチップ基板上に、流路側マイクロチップ基板を多数重ねて接着し、 複数のマイクロチップについて、 SiO膜を同時に形成することが可能となる。 By applying the coating solution to the side microchip substrate using a slit coater, it is possible to apply a large area coating solution at a time. Furthermore, a large number of channel-side microchip substrates can be stacked and bonded onto a film-like cover-side microchip substrate having a large area, and an SiO film can be simultaneously formed on a plurality of microchips.

2  2

(評価）  (Evaluation)

上記マイクロチップを、シリンジポンプにつなぎ、水を圧水したところ、微細流路から 液体が漏れることなく十分な密封性を示し、水への濡れ性も良ぐ十分な親水性を示 した。なお、液送の圧力は 0. 13MPaとした。  When the above microchip was connected to a syringe pump and pressurized with water, it showed sufficient sealing performance without leakage of liquid from the fine channel and sufficient hydrophilicity with good wettability to water. The liquid feeding pressure was 0.13 MPa.

(実施例 4) (Example 4)

実施例 4では、上記第 3実施形態の具体例を説明する。  In Example 4, a specific example of the third embodiment will be described.

(マイクロチップ基板） (Microchip substrate)

射出成形機で透明樹脂材料の環状ポリオレフイン樹脂（日本ゼオン社製、ゼォノア )を成形し、外形寸法が 50mmX 50mm X lmmの板状部材に幅 50 111、深さ 50 mの複数の微細流路と、内径 2mmの複数の貫通孔で構成される流路側マイクロチッ プ基板を作製した。この流路側マイクロチップ基板が、上記第 3実施形態における微 細流路 51が形成されたマイクロチップ基板 50に相当する。また、カバー側マイクロチ ップ基板には、透明樹脂フィルム（日本ゼオン社製、ゼォノアフィルム）を流路側マイ クロチップ基板と同様の大きさに切断して使用した。フィルムの厚さは 100 mである 。このフィルム状のカバー側マイクロチップ基板力 第 3実施形態における蓋 (カバー )として機能するマイクロチップ基板 60に相当する。  An injection molding machine is used to form a cyclic polyolefin resin (Zeon Corporation, made by Nippon Zeon Co., Ltd.), and a plate-shaped member with outer dimensions of 50mm x 50mm x lmm. Then, a flow path side microchip substrate composed of a plurality of through holes having an inner diameter of 2 mm was produced. This flow path side microchip substrate corresponds to the microchip substrate 50 in which the fine flow path 51 in the third embodiment is formed. For the cover side microchip substrate, a transparent resin film (manufactured by Nippon Zeon Co., Ltd., Zeonor film) was cut into the same size as the flow path side microchip substrate. The film thickness is 100 m. This film-like cover-side microchip substrate force corresponds to the microchip substrate 60 functioning as a lid (cover) in the third embodiment.

(塗布溶液の塗布） (Application of application solution)

上記流路側マイクロチップ基板の接合面と、カバー側マイクロチップ基板の接合面 に CVD成膜装置（サムコ社製、 PD— 270ST)にて、 SiO膜を 150nm形成した。 C Bonding surface of the flow path side microchip substrate and bonding surface of the cover side microchip substrate Then, a 150 nm SiO film was formed using a CVD film forming apparatus (PD-270ST, manufactured by Samco). C

2  2

VDの原料は、 TEOS (ADEKA社製）を使用した。 CVD成膜装置を使用することで 、幅 50 111、深さ 50 mの微細流路内部にも均一に SiO膜を形成することができた  The raw material for VD was TEOS (manufactured by ADEKA). Using a CVD film deposition system, it was possible to form a uniform SiO film inside a fine channel with a width of 50 111 and a depth of 50 m.

2  2

。微細流路内部の SiO膜の厚さは lOOnmであった。さらに、カバー側マイクロチップ  . The thickness of the SiO film inside the microchannel was lOOnm. Furthermore, the cover side microchip

2  2

基板に対しては SiO膜を形成した表面 (接合面）に、スプレーコーター（ゥシォ電機 Spray coater (USHIO) on the surface (bonding surface) on which the SiO film is formed.

2  2

社製、 USC— 200ST)を使用して、塗布溶液 (AZエレクトロニックマテリアルズ社製USC—200ST), coating solution (manufactured by AZ Electronic Materials)

、アクアミカ）を 1 mの厚さとなるように調整して塗布した。 , Aquamica) was applied to adjust the thickness to 1 m.

(接合）  (Joining)

次に、流路側マイクロチップ基板の SiO膜を形成した面と、カバー側マイクロチップ  Next, the surface of the flow path side microchip substrate on which the SiO film is formed, and the cover side microchip

2  2

基板の塗布溶液を塗布した面を重ねて、 100°Cのオーブンに 1時間投入し、仮硬化 させた。この段階で、流路側マイクロチップ基板とカバー側マイクロチップ基板は強固 に接合されているものの、十分に水と反応できていないため、有機成分を微量ながら 含んでいた。そこで、さらに温度 80°Cで湿度 90%の高温高湿槽に 3時間投入するこ とで、 Si〇2膜を形成した。これにより、マイクロチップが作製されたことになる。 The surfaces of the substrate coated with the coating solution were stacked and placed in an oven at 100 ° C for 1 hour for temporary curing. At this stage, although the flow path side microchip substrate and the cover side microchip substrate were firmly bonded, they did not sufficiently react with water, and thus contained a small amount of organic components. Therefore, the Si02 film was formed by placing it in a high-temperature and high-humidity tank with a temperature of 80 ° C and a humidity of 90% for 3 hours. Thereby, the microchip is manufactured.

以上のような方法でマイクロチップを作製すれば、塗布溶液を微細流路に均一に 塗布することが困難な場合であっても、 CVDなどのドライプロセスを利用することで、 SiO膜を微細流路に均一に形成することが可能となる  If a microchip is manufactured by the above method, even if it is difficult to uniformly apply the coating solution to the fine flow path, the SiO film can be finely flowed by using a dry process such as CVD. It becomes possible to form uniformly on the road

2  2

また、マイクロチップ基板やフィルムの耐薬品性が弱い場合、塗布溶液に使用して いる溶剤のダメージを受けてしまう場合がある。これに対して、実施例 4では、フィルム 状のカバー側マイクロチップ基板の表面に CVD装置などで緻密な SiO膜を形成し  In addition, if the chemical resistance of the microchip substrate or film is weak, the solvent used in the coating solution may be damaged. In contrast, in Example 4, a dense SiO film was formed on the surface of the film-like cover-side microchip substrate using a CVD apparatus or the like.

2 ておくことで、フィルムの損傷を防ぐことが可能となる。その結果、使用可能な溶剤の 選択肢が広がるという効果がある。なお、この実施例 4では、フィルム状のカバー側マ イク口チップ基板の表面へのコーティングとして、 SiO膜を用いた力 SiO膜の代わ  2 to prevent damage to the film. As a result, there is an effect that the choice of usable solvents is expanded. In Example 4, instead of a force SiO film using a SiO film as a coating on the surface of the film-like cover-side microphone opening chip substrate.

2 2 りにアクリル系、シリコン系のハードコート膜をフィルム状のカバー側マイクロチップ基 板に形成しておレ、ても良レ、。  In addition, an acrylic or silicon hard coat film may be formed on the film-like microchip substrate on the cover side.

(評価）  (Evaluation)

上記マイクロチップを、シリンジポンプにつなぎ、水を圧送したところ、微細流路から 液体が漏れることなく十分な密封性を示し、水への濡れ性も良ぐ十分な親水性を示 した。なお、液送の圧力は 0. 13MPaとした。 When the above microchip is connected to a syringe pump and water is pumped, it exhibits sufficient sealing performance without leakage of liquid from the fine channel, and sufficient hydrophilicity with good wettability to water. did. The liquid feeding pressure was 0.13 MPa.

以上のように、実施例 1から実施例 4によると、樹脂製のマイクロチップ基板に対して 、硬化後に SiOが主成分となる塗布溶液を塗布し、その塗布溶液を硬化させる前に  As described above, according to Examples 1 to 4, before applying a coating solution containing SiO as a main component after curing to a resin microchip substrate, and before curing the coating solution

2  2

マイクロチップ基板を重ね、その後、塗布溶液を硬化させて SiO膜とすることで、マイ After stacking the microchip substrates, the coating solution is cured to form a SiO film.

2  2

クロチップ基板を接合して、マイクロチップを製造することが可能となる。また、微細流 路の内面に硬化後に SiOが主成分となる塗布溶液を塗布して、マイクロチップ基板 A microchip can be manufactured by bonding a black chip substrate. In addition, a coating solution containing SiO as a main component after curing is applied to the inner surface of the fine flow path to form a microchip substrate.

2  2

を接合することで、微細流路の内面における SiO膜の形成と、マイクロチップ基板の To form the SiO film on the inner surface of the microchannel and the microchip substrate.

2  2

接合を同時に行うことが可能となる。なお、実施例 1から実施例 4に示したマイクロチ ップ基板の材料や塗布溶液の塗布方法などは 1例であり、この発明がこれらに限定さ れるものではない。 Bonding can be performed simultaneously. The material of the microchip substrate and the coating solution coating method shown in Examples 1 to 4 are only examples, and the present invention is not limited to these.

Claims

請求の範囲 The scope of the claims [1] 2つの樹脂製部材のうち少なくとも 1つの樹脂製部材には流路用溝が形成され、前 記 2つの樹脂製部材を、前記流路用溝が形成されている面を内側にして接合するマ イク口チップ基板の接合方法であって、  [1] Of the two resin members, at least one resin member has a channel groove, and the two resin members are arranged with the surface on which the channel groove is formed facing inward. A method of joining a microphone chip substrate to be joined, 前記 2つの樹脂製部材のうち少なくとも 1つの樹脂製部材の前記接合する面の表 面に、硬化後に SiOが主成分となる塗布溶液を塗布し、  A coating solution containing SiO as a main component after curing is applied to the surface of the joining surface of at least one of the two resin members. 2  2 前記 2つの樹脂製部材の前記接合する面同士を向かい合わせて前記 2つの樹脂 製部材を重ね、  The two resin members are stacked so that the surfaces to be joined of the two resin members face each other, その後、前記塗布溶液を硬化させることで前記 2つの樹脂製部材を接合することを 特徴とするマイクロチップ基板の接合方法。  Thereafter, the two resin members are bonded by curing the coating solution. A method for bonding microchip substrates. [2] 前記 2つの樹脂製部材のうち、一方の樹脂製部材には前記流路用溝が形成され、 他方の樹脂製部材は平板状の部材であり、 [2] Of the two resin members, one of the resin members is formed with the channel groove, and the other resin member is a flat member, 前記一方の樹脂製部材の前記流路用溝が形成された面に前記塗布溶液を塗布し 、前記他方の樹脂製部材の前記接合する面に SiOを主成分とする SiO膜を形成し  The coating solution is applied to a surface of the one resin member on which the channel groove is formed, and a SiO film mainly composed of SiO is formed on the surface to be joined of the other resin member. 2 2 前記 2つの樹脂製部材の前記接合する面同士を向かい合わせて前記 2つの樹脂 製部材を重ね、  2 2 The two resin members are stacked with the surfaces to be joined facing each other facing each other. その後、前記塗布溶液を硬化させることで前記一方の樹脂製部材と前記他方の樹 脂製部材を接合することを特徴とする請求の範囲第 1項に記載のマイクロチップ基板 の接合方法。  2. The method of bonding a microchip substrate according to claim 1, wherein the one resin member and the other resin member are bonded by curing the coating solution. [3] 前記 2つの樹脂製部材のうち、一方の樹脂製部材には前記流路用溝が形成され、 他方の樹脂製部材は平板状の部材であり、  [3] Of the two resin members, one of the resin members is formed with the channel groove, and the other resin member is a flat member, 前記他方の樹脂製部材の前記接合する面に前記塗布溶液を塗布し、前記一方の 樹脂製部材の前記流路用溝が形成された面に SiOを主成分とする SiO膜を形成し  The coating solution is applied to the surface to be joined of the other resin member, and a SiO film containing SiO as a main component is formed on the surface of the one resin member on which the channel groove is formed. 2 2 前記 2つの樹脂製部材の前記接合する面同士を向かい合わせて前記 2つの樹脂 製部材を重ね、  2 2 The two resin members are stacked with the surfaces to be joined facing each other facing each other. その後、前記塗布溶液を硬化させることで前記一方の樹脂製部材と前記他方の樹 脂製部材を接合することを特徴とする請求の範囲第 1項に記載のマイクロチップ基板 の接合方法。 Thereafter, the one resin member and the other tree are cured by curing the coating solution. 2. The method for joining microchip substrates according to claim 1, wherein the members made of fat are joined. [4] 前記 2つの樹脂製部材のうち、一方の樹脂製部材には前記流路用溝が形成され、 他方の樹脂製部材は平板状の部材であり、  [4] Of the two resin members, one of the resin members is formed with the channel groove, and the other resin member is a flat member, 前記 2つの樹脂製部材の前記接合する面それぞれに SiOを主成分とする SiO膜を  A SiO film mainly composed of SiO is formed on each of the surfaces to be joined of the two resin members. 2 2 形成し、  2 2 formed and 前記他方の樹脂製部材の前記接合する面に前記塗布溶液を塗布し、 前記 2つの樹脂製部材の前記接合する面同士を向かい合わせて前記 2つの樹脂 製部材を重ね、  Applying the coating solution to the surface to be joined of the other resin member, overlapping the two resin members with the surfaces to be joined of the two resin members facing each other, その後、前記塗布溶液を硬化させることで前記一方の樹脂製部材と前記他方の樹 脂製部材を接合することを特徴とする請求の範囲第 1項に記載のマイクロチップ基板 の接合方法。  2. The method of bonding a microchip substrate according to claim 1, wherein the one resin member and the other resin member are bonded by curing the coating solution. [5] 前記 2つの樹脂製部材のうち、一方の樹脂製部材には前記流路用溝が形成され、 他方の樹脂製部材は平板状の部材であり、  [5] Of the two resin members, one of the resin members is formed with the channel groove, and the other resin member is a flat member, 前記一方の樹脂製部材の前記流路用溝が形成された面に前記塗布溶液を塗布し 、前記他方の樹脂製部材の前記接合する面に前記塗布溶液を塗布し、  Applying the coating solution to the surface of the one resin member on which the channel groove is formed, applying the coating solution to the surface to be joined of the other resin member; 前記 2つの樹脂製部材の前記接合する面同士を向かい合わせて前記 2つの樹脂 製部材を重ね、  The two resin members are stacked so that the surfaces to be joined of the two resin members face each other, その後、前記塗布溶液を硬化させることで前記一方の樹脂製部材と前記他方の樹 脂製部材を接合することを特徴とする請求の範囲第 1項に記載のマイクロチップ基板 の接合方法。  2. The method of bonding a microchip substrate according to claim 1, wherein the one resin member and the other resin member are bonded by curing the coating solution. [6] 前記 2つの樹脂製部材のうち、一方の樹脂製部材と他方の樹脂製部材に前記流路 用溝が形成され、  [6] Of the two resin members, the flow path groove is formed in one resin member and the other resin member, 前記一方の樹脂製部材と前記他方の樹脂製部材の前記流路用溝が形成された面 に前記塗布溶液を塗布し、  Applying the coating solution to the surface of the one resin member and the other resin member on which the channel groove is formed; 前記 2つの樹脂製部材の前記接合する面同士を向かい合わせて前記 2つの樹脂 製部材を重ね、  The two resin members are stacked so that the surfaces to be joined of the two resin members face each other, その後、前記塗布溶液を硬化させることで前記一方の樹脂製部材と前記他方の樹 脂製部材を接合することを特徴とする請求の範囲第 1項に記載のマイクロチップ基板 の接合方法。 Thereafter, the one resin member and the other tree are cured by curing the coating solution. 2. The method for joining microchip substrates according to claim 1, wherein the members made of fat are joined. [7] 請求の範囲第 1項から請求の範囲第 6項のいずれかのマイクロチップ基板の接合 方法によって接合されたことを特徴とするマイクロチップ。  [7] A microchip that is bonded by the method for bonding microchip substrates according to any one of claims 1 to 6. [8] 2つの樹脂製部材のうち少なくとも 1つの樹脂製部材には流路用溝が形成され、前 記 2つの樹脂製部材を、前記流路用溝が形成されて!/、る面を内側にして接合された マイクロチップであって、 [8] Of the two resin members, at least one resin member is provided with a channel groove, and the two resin members are formed on the surface where the channel groove is formed! / A microchip joined inside, 前記 2つの樹脂製部材が接合している面には SiOを主成分とする SiO膜が形成さ  A SiO film composed mainly of SiO is formed on the surface where the two resin members are joined. 2 2 れ、前記 SiO膜を介して前記 2つの樹脂製部材が接合されていることを特徴とする  2 2, and the two resin members are joined via the SiO film. 2  2 マイクロチップ。  Microchip. [9] 前記 2つの樹脂製部材のうち、前記流路用溝が形成された樹脂製部材は板状の部 材であり、前記流路用溝が形成されて!、な!/、樹脂製部材はフィルム状の樹脂製部材 であることを特徴とする請求の範囲第 8項に記載のマイクロチップ。  [9] Of the two resin members, the resin member in which the channel groove is formed is a plate-like member, and the channel groove is formed! 9. The microchip according to claim 8, wherein the member is a film-like resin member.
PCT/JP2007/071984 2006-12-01 2007-11-13 Method for joining microchip substrate and microchip Ceased WO2008065880A1 (en)

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