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WO2007038297A3 - Systemes et procedes permettant de fabriquer des dispositifs photovoltaiques - Google Patents

Systemes et procedes permettant de fabriquer des dispositifs photovoltaiques Download PDF

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Publication number
WO2007038297A3
WO2007038297A3 PCT/US2006/037029 US2006037029W WO2007038297A3 WO 2007038297 A3 WO2007038297 A3 WO 2007038297A3 US 2006037029 W US2006037029 W US 2006037029W WO 2007038297 A3 WO2007038297 A3 WO 2007038297A3
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WO
WIPO (PCT)
Prior art keywords
workpiece
die
systems
methods
bars
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2006/037029
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English (en)
Other versions
WO2007038297A2 (fr
Inventor
Tom Rust
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to EP06815202A priority Critical patent/EP1938388A2/fr
Priority to CA002623382A priority patent/CA2623382A1/fr
Priority to JP2008532426A priority patent/JP2009510724A/ja
Publication of WO2007038297A2 publication Critical patent/WO2007038297A2/fr
Publication of WO2007038297A3 publication Critical patent/WO2007038297A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention concerne un dé pour des cellules photovoltaïques qui peut être fabriqué au moyen d'une région de motifs qui couvre sensiblement la surface utilisable d'une pièce cristalline. Des barres peuvent être gravées sur la pièce de façon qu'elles s'étendant sensiblement sur toute la longueur de la pièce. Ces barres peuvent ensuite être coupées en petits morceaux afin de former un dé ayant une largeur sensiblement égale à l'épaisseur de la pièce et un ratio de bord d'environ 20:1 ou moins. Ce procédé permet de maximiser la zone de conversion, ce qui permet d'extraire davantage d'énergie d'un volume donné de matériau de conversion photovoltaïque. Des contacts peuvent être placés sur des bords opposés du dé afin de former des cellules photovoltaïques, qui, dans certains modes de réalisation, fonctionnent quelle que soit l'orientation dans un panneau solaire.
PCT/US2006/037029 2005-09-23 2006-09-21 Systemes et procedes permettant de fabriquer des dispositifs photovoltaiques Ceased WO2007038297A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP06815202A EP1938388A2 (fr) 2005-09-23 2006-09-21 Systemes et procedes permettant de fabriquer des dispositifs photovoltaiques
CA002623382A CA2623382A1 (fr) 2005-09-23 2006-09-21 Systemes et procedes permettant de fabriquer des dispositifs photovoltaiques
JP2008532426A JP2009510724A (ja) 2005-09-23 2006-09-21 光起電力装置製造のシステムおよび方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US72008405P 2005-09-23 2005-09-23
US60/720,084 2005-09-23
US72652005P 2005-10-13 2005-10-13
US60/726,520 2005-10-13
US52556206A 2006-09-21 2006-09-21
US11/525,562 2006-09-21

Publications (2)

Publication Number Publication Date
WO2007038297A2 WO2007038297A2 (fr) 2007-04-05
WO2007038297A3 true WO2007038297A3 (fr) 2007-12-21

Family

ID=37900315

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/037029 Ceased WO2007038297A2 (fr) 2005-09-23 2006-09-21 Systemes et procedes permettant de fabriquer des dispositifs photovoltaiques

Country Status (4)

Country Link
EP (1) EP1938388A2 (fr)
JP (1) JP2009510724A (fr)
CA (1) CA2623382A1 (fr)
WO (1) WO2007038297A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110124144A1 (en) * 2009-03-17 2011-05-26 Roth & Rau Ag Substrate processing system and substrate processing method
EP2494615A2 (fr) 2009-10-30 2012-09-05 Merck Patent GmbH Procédé de fabrication de cellules solaires à émetteur sélectif

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3556075A (en) * 1968-02-26 1971-01-19 Lockheed Aircraft Corp Photocell scoring tool
US4735909A (en) * 1986-10-14 1988-04-05 Photon Energy, Inc. Method for forming a polycrystalline monolayer
US6084175A (en) * 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
US6156967A (en) * 1998-06-04 2000-12-05 Tecstar Power Systems, Inc. Modular glass covered solar cell array

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61292340A (ja) * 1985-06-19 1986-12-23 Sharp Corp ウエハチツプ形成方法
WO1999048136A2 (fr) * 1998-03-13 1999-09-23 Steffen Keller Configuration de cellule solaire
JP2002134782A (ja) * 2000-10-30 2002-05-10 Canon Inc 単結晶基体、それを用いた光電変換装置、放射線撮像装置、画像表示装置、太陽電池モジュール及び単結晶基体の製造方法
AUPR174800A0 (en) * 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
JP4036692B2 (ja) * 2002-06-27 2008-01-23 三洋電機株式会社 太陽電池モジュールの製造方法及び太陽電池セルの分離方法
JP2004221423A (ja) * 2003-01-16 2004-08-05 Renesas Technology Corp 半導体装置の製造方法
AU2003902270A0 (en) * 2003-05-09 2003-05-29 Origin Energy Solar Pty Ltd Separating and assembling semiconductor strips
KR101257786B1 (ko) * 2004-08-09 2013-04-30 트랜스폼 솔라 피티와이 리미티드 태양전지(슬라이버) 서브모듈 형성
EP1900038A4 (fr) * 2005-06-17 2012-01-04 Transform Solar Pty Ltd Procédé d interconnexion de piles solaires

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3556075A (en) * 1968-02-26 1971-01-19 Lockheed Aircraft Corp Photocell scoring tool
US4735909A (en) * 1986-10-14 1988-04-05 Photon Energy, Inc. Method for forming a polycrystalline monolayer
US6084175A (en) * 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
US6156967A (en) * 1998-06-04 2000-12-05 Tecstar Power Systems, Inc. Modular glass covered solar cell array

Also Published As

Publication number Publication date
CA2623382A1 (fr) 2007-04-05
EP1938388A2 (fr) 2008-07-02
WO2007038297A2 (fr) 2007-04-05
JP2009510724A (ja) 2009-03-12

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