[go: up one dir, main page]

WO2007015475A1 - Élément de conversion d'énergie électrique/énergie magnétique ayant une nano-structure - Google Patents

Élément de conversion d'énergie électrique/énergie magnétique ayant une nano-structure Download PDF

Info

Publication number
WO2007015475A1
WO2007015475A1 PCT/JP2006/315189 JP2006315189W WO2007015475A1 WO 2007015475 A1 WO2007015475 A1 WO 2007015475A1 JP 2006315189 W JP2006315189 W JP 2006315189W WO 2007015475 A1 WO2007015475 A1 WO 2007015475A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
nanostructure
electrode
domain wall
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2006/315189
Other languages
English (en)
Japanese (ja)
Other versions
WO2007015475A8 (fr
Inventor
Stewart E. Barnes
Sadamichi Maekawa
Jun'ichi Ieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Priority to JP2007529268A priority Critical patent/JP4817148B2/ja
Publication of WO2007015475A1 publication Critical patent/WO2007015475A1/fr
Publication of WO2007015475A8 publication Critical patent/WO2007015475A8/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetic and electrical energy mutual conversion element having a nanostructure that mutually converts magnetic energy into electrical energy and electrical energy into magnetic energy.
  • Electrons have charge and spin as their primary attributes.
  • the power of conventional electronics that exclusively uses the charge of electrons
  • spin which is another attribute of electrons
  • GMR giant magnetoresistive
  • TMR magnetic tunnel
  • Figure 6 shows the domain wall and the domain wall movement in the electron-conductive ferromagnetic wire.
  • A shows the position of the domain wall before passing the current through the wire, and
  • B shows the current added for ⁇ t time. The position of the domain wall is shown. It is assumed that the magnetization is uniformly magnetized in the axial direction (z direction) of the fine wire, and A is the cross-sectional area of the fine magnetic wire.
  • the spin of the conduction electron (size 1Z2) that carries the current tends to be parallel to the direction of the localized spin M (size S) due to the ferromagnetic interaction.
  • the conduction electrons that carry the current form a spin-polarized spin current. If the polarizability is p, the spin current j (density) is expressed by the following equation (1).
  • the unit of charge of electrons is e.
  • the localized spin M of the magnetic material is reversed and the domain wall W is formed.
  • the arrow of the localized spin M indicates the direction of the magnetic field due to the localized spin M.
  • the spin current j that flows into the domain wall W per unit time is equal to the amount of change in the localized spin of the domain wall W. Since the localized spin amount of the domain wall W is conserved, the domain wall W moves in the same direction as the electron flow (the direction opposite to the current) at the speed given by the following equation (2).
  • the external magnetic field B is applied parallel to the thin line, and the change in magnetic energy when the domain wall W is moved under the magnetic field B is evaluated.
  • the domain wall moves at the speed of equation (2) during time At, the direction of v A tA / v localized spins changes from the direction opposite to the direction of magnetic field B to the direction of magnetic field B. Therefore, the magnetic energy is reduced by the following formula (3).
  • Non-Patent Document 1 Maekawa Keisuke: Solid State Physics No. 32, No. 4, p. 3 (April 15, 1997, issued by Agne Technology Center)
  • Non-Patent Document 2 Research Report on Spin Electronics Research II (March 1999, published by Japan Electronics Industry Promotion Association)
  • Non-Patent Document 3 A. Yamaguchi et al: Phs. Rev. Lett. 92, 077205 (2004)
  • Non-Patent Document 4 J.Z.Sun et al .: FA-11, 49th MMM (2004)
  • an object of the present invention is to provide a magnetic and electrical energy mutual conversion element having a nanostructure.
  • the inventors of the present invention can convert electric energy into magnetic energy and store it by making the magnetic energy that can be taken by the domain wall different depending on the position of the nanostructure such as a thin wire.
  • the inventors have conceived of an interconversion element of magnetic and electric energy having a nanostructure that can take out magnetic energy as electric energy when necessary, and have reached the present invention.
  • a magnetic and electrical energy mutual conversion element having a nanostructure of the present invention has a nanostructure made of a magnetic body having electron conductivity, and both ends of the nanostructure. Connected to the center of the nanostructure and the first and second electrodes connected to the A first domain wall holder that can hold a domain wall between the first electrode and the center electrode of the nanostructure, and a domain wall between the second electrode and the center electrode of the nanostructure. A second domain wall holder that can be formed, wherein the magnetic energy of the first domain wall holder and the second domain wall holder is smaller than the magnetic energy of both ends of the nanostructure.
  • the magnetic energy is configured to be larger than the magnetic energy of the second domain wall holder, and electrical energy is applied between the first electrode and the central electrode via an input voltage or current, and the central electrode and the second electrode The output electric energy amplified through the output voltage or current is taken out from between.
  • the magnetic energy is preferably stored by applying a voltage or current having a polarity opposite to the input voltage or current between the first electrode and the center electrode between the first electrode and the second electrode.
  • the domain wall existing in the first domain wall holder is moved to the second domain wall holder by applying electric energy between the first electrode and the center electrode via an input voltage or current.
  • the domain wall moves, and the magnetic energy corresponding to the decrease in magnetic energy caused by the domain wall movement is converted into electric energy, and this electric energy is output from the central electrode and the second electrode to the output voltage or current.
  • the corresponding electrical energy is applied to the first electrode and the second electrode via voltage or current, and the domain wall held in the second domain wall holder is held again in the first domain wall. It can be done by returning to the department.
  • the nanostructure preferably includes a first region in which the width of the thin line is wide, a second region in which the width of the thin line continuous to the first region is constricted in a wedge shape, and the second region. It consists of a third region where the width of the thin line continuing to the region 2 gradually narrows and a fourth region where the width of the thin line continuing to the third region is wide, and the width of the first region is d The narrowest width of the second region
  • the widest width of the third region is d
  • the narrowest width is d
  • the first electrode is provided in the first region
  • the center electrode is provided on the second region side of the third region
  • the second electrode is provided in the fourth region.
  • the magnetic energy of the domain wall is proportional to the width of the thin wire
  • the domain wall in the second region generates a magnetic energy proportional to d-d and the first electrode and the central electrode.
  • the magnetic energy that can be taken by the domain wall gradually decreases because the width of the third region gradually decreases, so that the magnetic wall that has moved to the third region spontaneously moves in the direction of narrowing and the extra magnetic energy. Is dissipated as electrical energy and passed to the current. This excess electrical energy can be extracted as electrical energy from the center electrode and the second electrode via the output voltage or current. The total amount of excess electrical energy is d — d
  • Output electric energy larger than the input electric energy required to move the domain wall in the region to the third region can be obtained.
  • a voltage amplification element when used as a voltage amplification element, it operates as a voltage amplification element having a single energy gain.
  • the mutual conversion element of magnetic and electric energy having a nanostructure composed of fine wires can be configured as a planar structure on a substrate.
  • the nanostructure preferably has a lamination structure force, and both end portions and the central portion are wide.
  • the first narrow portion that can hold the domain wall between each end portion and the central portion is narrow.
  • the 2nd domain wall holding part is formed.
  • the material of the nanostructure is preferably any of permalloy, iron, iron-cobalt alloy, iron-platinum alloy, and samarium-conoleto alloy.
  • the nanostructure includes the first hard magnetic layer, the first soft magnetic layer, the second hard magnetic layer, the second soft magnetic layer, and the third hard magnetic layer.
  • the first electrode is connected to the first hard magnetic layer, which is one end of the nanostructure, and the third hard, which is the other end of the nanostructure.
  • the second electrode is connected to the magnetic layer, the central electrode is connected to the second hard magnetic layer, and the first soft magnetic layer and the second soft magnetic layer serve as a domain wall holding portion that holds the domain wall. .
  • the hard magnetic layer is made of iron-platinum alloy, and the soft magnetic layer Consists of permalloy.
  • the manufacture is facilitated.
  • the length L in the vertical direction of the nanostructure can be made smaller than that of the planar nanostructure, so that the internal resistance of the magnetic and electrical energy conversion element having the nanostructure can be reduced. it can.
  • the magnetic and electrical energy mutual conversion elements having nanostructures are integrated. You can do it.
  • a nanostructure for example, an extraction electrode provided on a magnetic wire
  • electric energy is converted into magnetic energy and stored
  • the stored magnetic energy is converted into electric energy. It can be converted into a single energy source and taken out.
  • Conventional devices that convert electrical energy into magnetic energy and store it, and convert the stored magnetic energy into electrical energy and extract it are composed of, for example, a ferromagnetic material and a coil wound around the ferromagnetic material. Since the interaction between the magnetization of the magnetic material and the current flowing through the coil requires a large and bulky coil, the magnetic and electrical energy conversion device having the nanostructure of the present invention is It is possible to reduce the size and integration, and to increase the energy efficiency.
  • FIG. 1 shows a configuration of a magnetic and electrical energy mutual conversion element having a nanostructure according to a first embodiment of the present invention, where (a) shows an initial state and (b) shows an input voltage.
  • (C) is a diagram showing the width of each portion of the thin line.
  • FIG. 2 is a diagram showing the relationship between the domain wall energy and the domain wall energy of the magnetic / electrical energy mutual conversion element having the nanostructure of the present invention, where the vertical axis is the domain wall energy, and the horizontal axis is the location of the domain wall. Indicates.
  • FIG. 3 schematically shows a magnetic and electrical energy interconversion element having a nanostructure according to a second embodiment of the present invention, in which (A) is a cross-sectional view and (B) is a plan view.
  • FIG. 4 schematically shows the structure of a magnetic and electrical energy mutual conversion element having a nanostructure according to a third embodiment of the present invention, where (A) is a cross-sectional view and (B) is a plan view.
  • FIG. 5 is a perspective view schematically showing a configuration of an integrated circuit using a magnetic and electrical energy mutual conversion element having a nanostructure of the present invention.
  • FIG. 6 Domain wall and domain wall movement in an electron-conducting ferromagnetic wire.
  • A shows the position of the domain wall before passing a current through the magnetic wire, and
  • B shows the current after adding the At time. The position of the domain wall is shown.
  • FIG. 1 shows a configuration of a magnetic and electrical energy mutual conversion element having a nanostructure according to the first embodiment of the present invention, where (a) shows an initial state, and (b) shows an input voltage.
  • (C) is a diagram showing the width of each part of the thin line.
  • the magnetic / electrical energy mutual conversion element 1 having the nanostructure of the present invention has a nanostructure force that has electron conductivity and magnetic thin wire force.
  • a magnetic thin wire that is, a magnetic thin wire (hereinafter referred to as a thin wire as appropriate) is continuous with the first region 2 where the thin wire is wide and the first region 2 as shown in FIG. 1 (a).
  • the second region 3 in which the width of the thin line is wedged, the third region 4 in which the width of the thin line continuing to the second region 3 is gradually narrowed, and the thin line continuing in the third region 4 And the fourth region 5 is wide.
  • the width of each part of the thin line is such that the width of the first region 2 is d and the width of the second region 3 is
  • D is the narrowest width
  • d is the widest width of the third region 4
  • d is the thinnest width
  • a first electrode 11 is provided in the first region 2
  • a center electrode 12 is provided on the second region 3 side of the third region 4
  • a second electrode 13 is provided in the fourth region 5.
  • each part of the thin line is magnetized as indicated by an arrow 7 to form a domain wall 6 in the region 3.
  • the domain wall has the narrowest width (d) of the second region 3 or the narrowest width (d) of the third region 4.
  • the area of the narrowest width of the second area 3 is m.
  • the first domain wall holder 8 is referred to as the narrowest region of the third region 4 and is referred to as the second domain wall holder 9.
  • the width and thickness of the magnetic wire of the present invention are indispensable to be nanometer size. That is, when the width and film thickness of the magnetic wire are 1 ⁇ m or more, the domain wall is not driven uniformly by the current, and the structure of the domain wall itself changes (see Non-Patent Document 3).
  • iron-cobalt alloy an alloy composed of iron and cobalt
  • iron-cobalt alloy an alloy composed of iron and platinum
  • a metal alloy referred to as a samarium-cobalt alloy as appropriate
  • samarium-cobalt alloy which is also called samarium-cobalt alloy.
  • FIG. 2 is a diagram showing the relationship between the position of the domain wall and the domain wall energy of the magnetic and electrical energy mutual conversion element having the nanostructure of the present invention, where the vertical axis represents the domain wall energy, and the horizontal axis represents the location of the domain wall. Show.
  • the domain wall position “1” is the first domain wall holder 8 corresponding to the position where the thin line width of the second region 3 in FIG. 1 is the narrowest.
  • the domain wall position “0” is the second domain wall holder 9 corresponding to the boundary position between the third region 4 and the fourth region 5 in FIG.
  • E indicates the difference in domain wall energy when the domain wall 6 a is present at the position of “0” when the domain wall 6 a is present at the position indicated by “1”, and E is the position of the domain wall 6 in the vicinity of the central electrode 12.
  • the energy stored in the domain wall 6 is obtained by multiplying Equation (7) by the cross-sectional area of the thin line.
  • Equation (7) the energy stored in the domain wall 6 is obtained by multiplying Equation (7) by the cross-sectional area of the thin line.
  • the cross-sectional areas of the thin lines at the positions indicated by "0", "1" and the central electrode 12 are A, A and A, respectively, the energy barriers E and E shown in Fig. 2
  • A d X h,
  • the domain wall 6 to be stopped stops at the position "0".
  • the width of the thin line is narrow and has a gradient, and the domain wall energy that the domain wall can take decreases according to the gradient. Therefore, the domain wall 6 has a gradient of the domain wall energy in the third region 4. According to the following equation (5) and (6): It is transferred to the conduction electrons and finally the central electrode 12 and the second electrode 13 , Dissipate.
  • the amplification factor G is expressed by the following equation (9) using equation (8).
  • Permalloy FeNi alloy
  • a 10 "n j / m
  • K 10 5 j / m 3 and ex u
  • a magnetic and electrical energy mutual conversion element having a nanostructure according to a second embodiment of the present invention will be described.
  • FIG. 3 schematically shows a magnetic and electrical energy mutual conversion element 20 having a nanostructure according to the second embodiment of the present invention, where (A) is a cross-sectional view and (B) is a plan view. It is.
  • the magnetic and electrical energy conversion element 20 having a nanostructure is composed of a nanostructure and has a positional relationship obtained by rotating the thin wire 1 shown in FIG. 1 by 90 °. .
  • the first layer 22 having a wider width
  • the second layer 23 continuous with the first layer 22 and having a wedge-like width
  • the second layer 23 having a width that is continuous with the second layer 23 It is composed of a third layer 24 that gradually becomes thin and a fourth layer 25 that is continuous with the third layer 24 and has a wide layer width.
  • the width of each part of the nanostructure 20 is d for the width of the first layer 22 and d for the narrowest width of the second layer 23.
  • the widest width of the third layer 24 is d and the narrowest width is d, and the width of the fourth layer 25 is d And d>d>d> d and d> d.
  • the structure 20 has a thickness L in the stacking direction (Y-axis direction) and a length in the direction perpendicular to the paper surface (Z-axis direction).
  • the width is d in order to hold the domain wall.
  • a first domain wall holder 23A is formed. Between the other end 25 of the nanostructure 25 and the fourth layer 25, a second domain wall holder 24A having a width d is formed to hold the domain wall.
  • FIG. 3 (B) is a plan view seen from the one end 25 side of the upper part of the nanostructure shown in FIG. 3 (A).
  • the first electrode 26, the second electrode 27, and the central electrode 28 are connected to each other.
  • the electrode wirings 26A, 27A, and 28A are respectively formed. These electrode wirings 26A, 27A, 28A can be formed through a plurality of interlayer insulating layers so as not to contact each other.
  • the first and second domain wall holders 23A, 24A are formed by gradually changing the dimensions linearly from the end side and the center side. May be formed by a curve that is not a straight line as shown, or a combination of a straight line and a curve.
  • the nanostructure 20 is made of a magnetic material having electron conductivity.
  • the first and second electrodes 26 and 27 are connected to both ends of the nanostructure 20, and the center electrode 28 is connected to the center of the nanostructure.
  • a first domain wall holder 23A that can hold a domain wall between the first electrode 26 and the center electrode 28 of the nanostructure 20 and a domain wall between the second electrode 27 and the center electrode 28 of the nanostructure 20 Second domain wall holder 24A And there will be a power waiting.
  • the magnetic energy of the first domain wall holder 23A and the second domain wall holder 23A, 24A is smaller than the magnetic energy of the both ends of the nanostructure 20, and the magnetic energy of the first domain wall holder 23A is the first It is configured to be larger than the magnetic energy 24 A of the domain wall holder 2.
  • an input voltage or current is applied between the first electrode 26 and the central electrode 28.
  • the magnetic / electrical energy mutual conversion element 20 having the nanostructure of the present invention can be formed by a thin film forming technique and a processing method such as etching, so that its thickness in the vertical direction (Y direction in FIG. 4) Easy to control. For this reason, the vertical length L of the nanostructure 20 can be made smaller than that in the case of the nanostructure 1 having a planar structure, and therefore, the magnetic and electrical energy mutual conversion element 20 having the nanostructure 20 It is advantageous to reduce the internal resistance and increase its integration density.
  • a magnetic and electrical energy mutual conversion element having a nanostructure according to a third embodiment of the present invention will be described.
  • FIG. 4 schematically shows the structure of the magnetic and electrical energy mutual conversion element 30 having the nanostructure according to the third embodiment of the present invention, where (A) is a cross-sectional view and (B) is a cross-sectional view.
  • FIG. 4 schematically shows the structure of the magnetic and electrical energy mutual conversion element 30 having the nanostructure according to the third embodiment of the present invention, where (A) is a cross-sectional view and (B) is a cross-sectional view.
  • the nanostructure of the mutual conversion element 30 of magnetic and electrical energy shown in FIG. 4 (A) has a structure in which the lower force on the paper is also stacked on the first hard magnetic layer 34 in order.
  • the first soft magnetic layer 35, the second hard magnetic layer 36, the second soft magnetic layer 37, and the third hard magnetic layer 38 are stacked.
  • the first electrode 40 is connected to the first hard magnetic layer 34 which is one end thereof, and the second electrode 41 is connected to the third hard magnetic layer 38 which is the other end thereof.
  • a central electrode 42 is connected near the boundary between the second hard magnetic layer 36 and the second hard magnetic layer 36.
  • the ferromagnetic structure 33 has a thickness L in the stacking direction (Y-axis direction) and a width W.
  • FIG. 4 (B) is a plan view of the nanostructure 30 of FIG. 4 (A) in which the side force of the third hard magnetic layer 38 on the upper side is also seen.
  • the first electrode 40 and the second electrode 41 Electrode wirings 44, 45, and 46 are formed on the center electrode 42, respectively. These electrode self-intersecting wires 44, 45, 46 can be formed through a plurality of interlayer insulation layers, such as V, which are not in contact with each other.
  • the first to third hard magnetic layers 34, 36, and 38 are made of a hard magnetic material that is a material in which the direction of the magnetic field hardly changes, and an iron-platinum alloy or the like can be used.
  • This hard magnetic material is also called a hard magnetic material.
  • the first and second soft magnetic layers 35 and 37 also have a hard magnetic material force, which is a material in which the direction of the magnetic moment is extremely easy to rotate, and permalloy or the like can be used.
  • This soft magnetic material is also called a soft magnetic material.
  • the first soft magnetic layer 35 inserted between the first and second hard magnetic layers 34 and 36 becomes a stable low energy layer holding a domain wall, and the first A domain wall holder is formed.
  • the second soft magnetic layer 35 inserted between the second and third hard magnetic layers 36 and 38 becomes a stable low-energy layer that holds the domain wall, and serves as the second domain wall holding portion.
  • the magnetic energy of the first domain wall holding unit and the second domain wall holding unit is smaller than the magnetic energy of the both ends of the nanostructure 30.
  • the magnetic energy of the first domain wall holding unit is the second domain wall. It is configured to be larger than the magnetic energy of the holding part.
  • the gradient of energy generated between the hard magnetic layer and the soft magnetic layer is determined by the mixing ratio of each magnetic substance at the boundary between each hard magnetic layer 34, 3 6, 38 and each soft magnetic layer 35, 37. It can be formed by gradually changing.
  • the difference in potential energy between the first and second domain wall holders can be obtained.
  • the potential energy of the domain wall holder is given by the product of the magnetic energy ⁇ per unit area multiplied by the section area ⁇ , that is, ⁇ X ⁇ .
  • the cross-sectional area A is constant.
  • the magnetic energy of the hard magnetic layer and that of the soft magnetic layer are different, so that a potential energy difference between the domain wall holders can be generated.
  • Magnetic energy per unit area when the soft magnetic layer is permalloy ⁇ (soft) Is 10 3 j / m 2 as mentioned above.
  • iron - magnetic energy per unit area in the case of platinum alloy sigma (hard) becomes 8 X 10- 3 j / m 2 approximately.
  • the nanostructure 30 has a regular tetragonal pattern, the area is 1 X 10-15 m 2 when its width W (dimension in the X-axis direction in Fig. 4) is 32 nm.
  • a difference in positional energy can be provided by changing the thickness of the soft magnetic layer in the stacking direction. The reason is described below.
  • the width of the domain wall determines the magnitude of the exchange interaction A.
  • the domain wall that is, the portion where the magnetic moment is spatially changed almost overlaps the soft magnetic layer, so that the magnetic energy is the above-mentioned ⁇ (soft)
  • the lowest energy state among the nanostructures 30 is realized.
  • the soft magnetic layer is made thinner and smaller than the domain wall width, the domain wall actually overlaps with the adjacent hard magnetic layer, so the energy of the domain wall is ⁇ (soft) and ⁇ (hard) Is given by an intermediate value.
  • the energy of the domain wall is higher than that in the case of the thick soft magnetic layer.
  • the soft magnetic layer serving as the second magnetic holding portion on the low energy side needs to be thicker than the domain wall width, and the soft magnetic layer serving as the first magnetic wall holding portion on the high energy side needs to be thinner than the domain wall width.
  • the first and second soft magnetic layers 35 and 37 are used as the first and second magnetic holding portions, respectively.
  • the magnetic and electrical energy mutual conversion element 1 having the nanostructure shown in FIG. 1 can be operated.
  • the vertical length L of the body 30 can also be made smaller than that of the nanostructure 1 having a planar structure, the internal resistance of the magnetic and electrical energy conversion element 30 having the nanostructure can be reduced and integrated. It is advantageous to increase the density.
  • the width and film thickness of the magnetic and electrical energy mutual conversion elements 20, 30 having the nanostructure of the present invention are indispensable to be nanometer size. That is, when the magnetic wire width and film thickness are 1 ⁇ m or more, the domain wall is not uniformly driven by the current, and the structure of the domain wall itself changes (see Non-Patent Document 3).
  • FIG. 5 is a perspective view schematically showing a configuration of an integrated circuit using a magnetic and electrical energy mutual conversion element having the nanostructure of the present invention.
  • the X-direction electrode wiring 52 and the Y-direction electrode wiring 54 cross each position.
  • the nanostructures 20 are arranged in a matrix.
  • Y-direction electrode wiring 52 and X-direction electrode wiring 54 are connected to the first and second electrode layers 26 and 27 of each nanostructure 20 arranged in the matrix form, respectively.
  • An electrode wiring 56 is connected to the electrode 28.
  • the nanostructure is not limited to the magnetic and electrical energy conversion element 20 having the nanostructure according to the second embodiment, and the nanostructures 1 and 30 according to the first embodiment and the third embodiment are used. May be.
  • the magnetic and electrical energy mutual conversion elements having the nanostructure of the present invention can be integrated to increase the stored magnetic energy. If such an integrated circuit 50 is incorporated in an integrated circuit that is a semiconductor device, it can be used as an auxiliary power source in the event of a power failure.
  • the magnetic and electrical energy mutual conversion element having the nanostructure of the present invention includes the following: It can be manufactured as follows.
  • a magnetic thin film to be a nanostructure is deposited on a substrate with a predetermined thickness.
  • the magnetic material permalloy, iron, iron-cobalt alloy, iron-platinum alloy, samarium-cobalt alloy and the like can be used.
  • a deposition method a sputtering method which is a physical vapor deposition method can be used.
  • an MgO substrate or a substrate obtained by depositing MgO on a Si substrate coated with an insulating layer can be used.
  • the magnetic wire 1 and the nanostructures 20, 30 are formed by the mask process and etching process, thereby producing magnetic and electrical energy mutual conversion elements 1, 20, 30 having the nanostructures. can do.
  • the peripheral circuit for controlling the voltage and current between the electrodes of the magnetic and electrical energy mutual conversion element having the nanostructure of the present invention is formed by an integrated circuit, the nanostructure manufactured by the above process is used.
  • the entire substrate including the bodies 1, 20, and 30 is further covered with an insulating film, and after opening only the electrodes of the nanostructures 1, 20, and 30, the mutual magnetic and electrical energy of each nanostructure is obtained.
  • the wiring of the conversion element memory may be performed.
  • the peripheral circuit of the magnetic and electrical energy conversion elements 1, 20, and 30 having the nanostructure of the present invention is formed by a Si MOS transistor, the Si peripheral circuit is formed first, and then Thus, the magnetic and electrical energy mutual conversion elements 1, 20, and 30 having the nanostructure of the present invention may be formed.
  • each material can be deposited using conventional thin film deposition methods such as CVD, vapor deposition, laser ablation, and MBE.
  • CVD chemical vapor deposition
  • vapor deposition vapor deposition
  • laser ablation and MBE
  • light exposure EB exposure, or the like can be used for a mask process for forming electrodes of a predetermined shape or wiring of an integrated circuit.
  • the electric energy is converted into magnetic energy and stored, and the stored magnetic field is stored.
  • Energy can be converted into electrical energy and extracted.
  • the voltage can be amplified using the stored magnetic energy as an energy source.
  • Conventional storage of magnetic energy requires a large and bulky coil to extract the magnetic force and electrical energy that is generated by magnetizing a ferromagnetic material in a specific direction.
  • the element of the present invention it is only necessary to apply a voltage or current to the extraction electrode provided in the thin wire or the laminated structure. Therefore, the device can be miniaturized and integrated, and has high energy efficiency. It is extremely useful if it is used in a device that needs to convert electrical energy into magnetic energy and store it, and then convert the stored magnetic energy into electrical energy.

Landscapes

  • Hall/Mr Elements (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

La présente invention concerne un élément de conversion d'énergie électrique/énergie magnétique ayant une nano-structure pour convertir l'énergie électrique en énergie magnétique à accumuler et extraire l'énergie magnétique comme énergie électrique lorsque cela est nécessaire. L'élément de conversion possède un nano-fil formé par un corps magnétique conducteur d'électrons. Le nano-fil comprend une première région (2) ayant une grande largeur de fil, une deuxième région (3) ayant une largeur de fil réduite en forme de cale sur la partie continue à la première région (2), une troisième région (4) ayant une largeur de fil graduellement réduite vers la deuxième région (3) et une quatrième région (5) ayant une grande largeur de fil sur la partie continue à la troisième région (4). Le nano-fil possède une première électrode (11) dans la première région, une électrode centrale (12) à l'extrémité supérieure de la partie restreinte de la deuxième région du côté de la troisième région et une seconde électrode (13) dans la quatrième région. La tension d'entrée est appliquée sur la première électrode (11) et la seconde électrode (13) et la tension de sortie amplifiée est extraite entre l'électrode centrale (12) et la seconde électrode (13).
PCT/JP2006/315189 2005-08-02 2006-08-01 Élément de conversion d'énergie électrique/énergie magnétique ayant une nano-structure Ceased WO2007015475A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007529268A JP4817148B2 (ja) 2005-08-02 2006-08-01 ナノ構造体を有する磁気及び電気エネルギーの相互変換素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005224774 2005-08-02
JP2005-224774 2005-08-02

Publications (2)

Publication Number Publication Date
WO2007015475A1 true WO2007015475A1 (fr) 2007-02-08
WO2007015475A8 WO2007015475A8 (fr) 2007-03-22

Family

ID=37708756

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2006/315189 Ceased WO2007015475A1 (fr) 2005-08-02 2006-08-01 Élément de conversion d'énergie électrique/énergie magnétique ayant une nano-structure

Country Status (2)

Country Link
JP (2) JP4817148B2 (fr)
WO (1) WO2007015475A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258655A (ja) * 2006-03-21 2007-10-04 Korea Univ Foundation 改善された接合形態を有するナノ接合
JP2008166787A (ja) * 2006-12-29 2008-07-17 Samsung Electronics Co Ltd 磁壁移動を利用した情報保存装置及びその製造方法
JP2009099625A (ja) * 2007-10-12 2009-05-07 Nec Corp 磁気ランダムアクセスメモリ、及びその初期化方法
JP2010141340A (ja) * 2008-12-15 2010-06-24 Samsung Electronics Co Ltd 磁気トラック、磁気トラックを備える情報保存装置及び該情報保存装置の動作方法
WO2010101251A1 (fr) * 2009-03-06 2010-09-10 国立大学法人東京大学 Dispositif de conversion d'énergie magnétique en énergie électrique, dispositif de fourniture de puissance et capteur magnétique
JP2012209005A (ja) * 2011-03-30 2012-10-25 Hitachi Ltd 磁気ヘッド及び磁気記憶装置
US8300456B2 (en) 2006-12-06 2012-10-30 Nec Corporation Magnetic random access memory and method of manufacturing the same
JP5062481B2 (ja) * 2005-08-15 2012-10-31 日本電気株式会社 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
WO2011156028A3 (fr) * 2010-03-09 2014-03-20 Board Of Regents Of The University Of Texas System Nanostructures poreuses et non poreuses
US8693238B2 (en) 2006-08-07 2014-04-08 Nec Corporation MRAM having variable word line drive potential
JP5626741B1 (ja) * 2013-11-14 2014-11-19 株式会社日立製作所 磁気メモリ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022144064A (ja) 2021-03-18 2022-10-03 キオクシア株式会社 磁気メモリ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191032A (ja) * 2003-12-24 2005-07-14 Toshiba Corp 磁気記憶装置及び磁気情報の書込み方法
WO2005069368A1 (fr) * 2004-01-15 2005-07-28 Japan Science And Technology Agency Element mobile de paroi de domaine magnetique a injection de courant

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3655229B2 (ja) * 2001-09-26 2005-06-02 株式会社東芝 磁気抵抗効果素子及びその製造方法、磁気検出素子並びに磁気記録再生素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191032A (ja) * 2003-12-24 2005-07-14 Toshiba Corp 磁気記憶装置及び磁気情報の書込み方法
WO2005069368A1 (fr) * 2004-01-15 2005-07-28 Japan Science And Technology Agency Element mobile de paroi de domaine magnetique a injection de courant

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5062481B2 (ja) * 2005-08-15 2012-10-31 日本電気株式会社 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法
JP2007258655A (ja) * 2006-03-21 2007-10-04 Korea Univ Foundation 改善された接合形態を有するナノ接合
US8693238B2 (en) 2006-08-07 2014-04-08 Nec Corporation MRAM having variable word line drive potential
US8300456B2 (en) 2006-12-06 2012-10-30 Nec Corporation Magnetic random access memory and method of manufacturing the same
JP2008166787A (ja) * 2006-12-29 2008-07-17 Samsung Electronics Co Ltd 磁壁移動を利用した情報保存装置及びその製造方法
JP2009099625A (ja) * 2007-10-12 2009-05-07 Nec Corp 磁気ランダムアクセスメモリ、及びその初期化方法
JP2010141340A (ja) * 2008-12-15 2010-06-24 Samsung Electronics Co Ltd 磁気トラック、磁気トラックを備える情報保存装置及び該情報保存装置の動作方法
WO2010101251A1 (fr) * 2009-03-06 2010-09-10 国立大学法人東京大学 Dispositif de conversion d'énergie magnétique en énergie électrique, dispositif de fourniture de puissance et capteur magnétique
WO2011156028A3 (fr) * 2010-03-09 2014-03-20 Board Of Regents Of The University Of Texas System Nanostructures poreuses et non poreuses
JP2012209005A (ja) * 2011-03-30 2012-10-25 Hitachi Ltd 磁気ヘッド及び磁気記憶装置
JP5626741B1 (ja) * 2013-11-14 2014-11-19 株式会社日立製作所 磁気メモリ

Also Published As

Publication number Publication date
JPWO2007015475A1 (ja) 2009-02-19
JP2011216899A (ja) 2011-10-27
JP4817148B2 (ja) 2011-11-16
JP5071908B2 (ja) 2012-11-14
WO2007015475A8 (fr) 2007-03-22

Similar Documents

Publication Publication Date Title
JP5071908B2 (ja) ナノ構造体を有する磁気及び電気エネルギーの相互変換素子
JP7495463B2 (ja) スピン流磁化反転素子、磁気抵抗効果素子、磁気メモリ及び磁化反転方法
CN108011037B (zh) 自旋轨道转矩型磁化反转元件、磁存储器及高频磁性器件
US9343658B2 (en) Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques
CN110061127B (zh) 磁隧道结的形成方法及磁阻式随机存储器
CN109300495A (zh) 基于人工反铁磁自由层的磁性结构及sot-mram
US10741318B2 (en) Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
CN110349609A (zh) 一种三维磁性器件及磁存储器
TW200926169A (en) Magnetic random access memory, manufacturing method and programming method thereof
CN105161613A (zh) 一种基于双势垒结构的磁存储器件
KR20220029381A (ko) 쌍극자 결합 스핀 궤도 토크 구조
CN104662654B (zh) 存储单元、存储装置和磁头
CN110268530A (zh) 自旋流磁化反转元件和自旋轨道转矩型磁阻效应元件
CN101359715B (zh) 一种自旋转移器件及其制备方法
CN109994598B (zh) 自旋轨道转矩型磁化旋转元件及磁阻效应元件
US20140104941A1 (en) Magnetic memory
CN111384235B (zh) 一种磁性隧道结及基于磁性隧道结的nsot-mram装置
CN113809229B (zh) 一种自旋轨道矩磁存储器及其制备方法
JP2007273952A (ja) ナノ磁気メモリ素子とその製造方法
JP6758617B2 (ja) 積層磁性薄膜、積層磁性薄膜の製造方法、および磁気メモリ装置
TW202025449A (zh) 自旋電子裝置、磁性記憶體及電子機器
CN104170032A (zh) 纳米颗粒、永久磁铁、发动机和发电机
CN103280234B (zh) 磁性随机存储器
TW201222546A (en) Memory element and memory device
JP2014053546A (ja) 電圧駆動型スピントロニクス三端子素子

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2007529268

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 06782067

Country of ref document: EP

Kind code of ref document: A1