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WO2006014574A3 - Dispositifs varactor metal-isolant - Google Patents

Dispositifs varactor metal-isolant Download PDF

Info

Publication number
WO2006014574A3
WO2006014574A3 PCT/US2005/024207 US2005024207W WO2006014574A3 WO 2006014574 A3 WO2006014574 A3 WO 2006014574A3 US 2005024207 W US2005024207 W US 2005024207W WO 2006014574 A3 WO2006014574 A3 WO 2006014574A3
Authority
WO
WIPO (PCT)
Prior art keywords
layers
insulator
conducting layers
varactor
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/024207
Other languages
English (en)
Other versions
WO2006014574A2 (fr
WO2006014574A9 (fr
WO2006014574A8 (fr
Inventor
Michael J Estes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/113,587 external-priority patent/US7173275B2/en
Application filed by Individual filed Critical Individual
Priority to EP05769417A priority Critical patent/EP1779440A4/fr
Priority to JP2007520523A priority patent/JP2008506265A/ja
Publication of WO2006014574A2 publication Critical patent/WO2006014574A2/fr
Publication of WO2006014574A9 publication Critical patent/WO2006014574A9/fr
Anticipated expiration legal-status Critical
Publication of WO2006014574A3 publication Critical patent/WO2006014574A3/fr
Publication of WO2006014574A8 publication Critical patent/WO2006014574A8/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/215—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only varactors

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un varactor qui comprend une première et une seconde couche conductrice, espacées l'une de l'autre de façon à permettre l'application d'une tension donnée aux bornes desdites couches conductrices; et un dispositif isolant comprenant au moins une couche isolante, placée entre les première seconde couches conductrices et qui coopère avec celles-ci de manière à produire un réserve de charge, laquelle change en fonction de la tension donnée, de sorte que la capacité du dispositif entre les première et seconde couches conductrices change selon la tension donnée. Le dispositif isolant peut comprendre une couche, deux couches distinctes ou plus de deux couches distinctes. Une ou plusieurs des couches peu(ven)t être faite(s) d'une matière amorphe. Une version du varactor à tension de polarisation nulle est également décrite.
PCT/US2005/024207 2004-07-08 2005-07-07 Dispositifs varactor metal-isolant Ceased WO2006014574A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05769417A EP1779440A4 (fr) 2004-07-08 2005-07-07 Dispositifs varactor metal-isolant
JP2007520523A JP2008506265A (ja) 2004-07-08 2005-07-08 金属−絶縁体バラクタデバイス

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US58649304P 2004-07-08 2004-07-08
US60/586,493 2004-07-08
US11/113,587 2005-04-25
US11/113,587 US7173275B2 (en) 2001-05-21 2005-04-25 Thin-film transistors based on tunneling structures and applications

Publications (4)

Publication Number Publication Date
WO2006014574A2 WO2006014574A2 (fr) 2006-02-09
WO2006014574A9 WO2006014574A9 (fr) 2006-03-30
WO2006014574A3 true WO2006014574A3 (fr) 2007-01-25
WO2006014574A8 WO2006014574A8 (fr) 2007-04-05

Family

ID=35787663

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/024207 Ceased WO2006014574A2 (fr) 2004-07-08 2005-07-07 Dispositifs varactor metal-isolant

Country Status (4)

Country Link
EP (1) EP1779440A4 (fr)
JP (1) JP2008506265A (fr)
KR (1) KR20070083457A (fr)
WO (1) WO2006014574A2 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4510516A (en) * 1982-02-01 1985-04-09 Bartelink Dirk J Three-electrode MOS electron device
US5895934A (en) * 1997-08-13 1999-04-20 The United States Of America As Represented By The Secretary Of The Army Negative differential resistance device based on tunneling through microclusters, and method therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3613011A (en) * 1969-01-08 1971-10-12 Gen Motors Corp Varactor tone control apparatus
US5019530A (en) * 1990-04-20 1991-05-28 International Business Machines Corporation Method of making metal-insulator-metal junction structures with adjustable barrier heights
US6534784B2 (en) * 2001-05-21 2003-03-18 The Regents Of The University Of Colorado Metal-oxide electron tunneling device for solar energy conversion
US6944052B2 (en) * 2002-11-26 2005-09-13 Freescale Semiconductor, Inc. Magnetoresistive random access memory (MRAM) cell having a diode with asymmetrical characteristics

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4510516A (en) * 1982-02-01 1985-04-09 Bartelink Dirk J Three-electrode MOS electron device
US5895934A (en) * 1997-08-13 1999-04-20 The United States Of America As Represented By The Secretary Of The Army Negative differential resistance device based on tunneling through microclusters, and method therefor

Also Published As

Publication number Publication date
WO2006014574A2 (fr) 2006-02-09
EP1779440A2 (fr) 2007-05-02
JP2008506265A (ja) 2008-02-28
WO2006014574A9 (fr) 2006-03-30
WO2006014574A8 (fr) 2007-04-05
EP1779440A4 (fr) 2009-04-15
KR20070083457A (ko) 2007-08-24

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