WO2006092949A1 - Optical element with laser damage suppression film - Google Patents
Optical element with laser damage suppression film Download PDFInfo
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- WO2006092949A1 WO2006092949A1 PCT/JP2006/302437 JP2006302437W WO2006092949A1 WO 2006092949 A1 WO2006092949 A1 WO 2006092949A1 JP 2006302437 W JP2006302437 W JP 2006302437W WO 2006092949 A1 WO2006092949 A1 WO 2006092949A1
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- optical element
- film
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- layer
- blue laser
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
- C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
Definitions
- the present invention relates to an optical element having a damage suppression film on a substrate made of a blue laser compatible plastic material.
- the present invention relates to an optical element having a laser damage suppression film used for a blue laser with a short wavelength and a pi power (30 mWZmm 2 or more).
- plastic materials that can handle a relatively low-power blue laser have the power of each material manufacturer. There is no plastic material that can withstand a high-power blue laser.
- an antireflection film is often formed on the surface of a plastic lens used in a video camera, a still camera, glasses, or the like.
- Such an antireflection film is formed of a multilayer film in which low refractive index layers and high refractive index layers are alternately laminated.
- Such multilayer films are disclosed in JP-A-11-30703, JP-A-11-171596, JP-A-11 326634, JP-A-2002-71903, JP-A-2003-98308 and JP-A-2003-.
- An optical element according to the present invention is an antireflection optical element comprising a multilayer film in which a layer made of a low refractive material and a layer having a high refractive material force are alternately laminated on a plastic substrate.
- the oxygen transmission coefficient is reduced so that the laser transmittance change after continuous irradiation with a blue laser with an energy density of 120 mWZmm 2 at an ambient temperature of 25 ° C is 2% or less.
- the optical element according to the present invention has a small oxygen transmission coefficient, it is not easily damaged by blue laser irradiation.
- FIG. 1 is a diagram showing a configuration of an optical element provided with a laser damage suppressing film according to one embodiment of the present invention.
- FIG. 2 is a diagram showing the result of measuring the light intensity change rate of an optical element after irradiating the optical element with a blue laser for 1000 hours.
- FIG. 3 is a diagram showing the result of measuring the total wavefront aberration (RMS) of the optical element before and after irradiating the optical element with a blue laser for 1000 hours.
- RMS total wavefront aberration
- FIG. 4 is a diagram showing a configuration of an ion plating apparatus for performing an ion plating method.
- FIG. 5 is a diagram showing the amount of change in light transmittance of an optical element in which a conventional film is formed on a conventional substrate and an optical element in which improvement films 1 and 2 are formed on a conventional substrate.
- FIG. 6 is a diagram showing oxygen transmission coefficients of an optical element in which a conventional film is formed on a conventional substrate and an optical element in which improvement films 1 and 2 are formed on a conventional substrate.
- FIG. 7 A diagram showing the change in the amount of chemiluminescence after irradiation with a blue laser on an optical element in which a conventional film is formed on a conventional substrate and an optical element in which an improvement film 1 is formed on a conventional substrate, and then stopped. is there.
- FIG. 8 is an enlarged view of a part of the time axis in FIG.
- FIG. 9 is a view showing a change in light transmittance between a conventional substrate and a nitrogen molded substrate.
- FIG. 11 is a diagram showing a change in light transmittance between an optical element in which the improvement film 1 is formed on a conventional substrate and an optical element in which the improvement film 1 is formed on a nitrogen-molded substrate.
- FIG. 1 is a diagram showing a configuration of an optical element provided with a laser damage suppressing film according to one embodiment of the present invention.
- a layer 103 made of monoacidic silicon (SiO) is formed on a substrate 101 that also has a plastic material strength for blue laser.
- the layer 103 made of silicon monoxide fulfills a function of improving the adhesion between the substrate 101 having plastic material strength and the layer formed thereon.
- layers 105 made of a low refractive material and layers 107 made of a high refractive material cover are alternately laminated. In this embodiment, three layers 105 made of a low refractive material cover and three layers 107 made of a high refractive material cover are formed.
- the blue laser compatible plastic material is an olefin-based material. More specifically, it is a thermoplastic transparent olefin cycloolefin polymer having a function of preventing acidification.
- the layer 103 made of silicon monoxide is formed on the substrate 101 by a vacuum deposition method.
- a material to be formed into a thin film in this case, silicon monoxide
- the evaporated material is deposited (deposited) on the substrate to form a thin film.
- the thickness of the layer 103 made of silicon monoxide is about several hundred nanometers.
- the low refractive index material is silicon dioxide (SiO 2) in the present embodiment. From silicon dioxide
- the refractive index of the layer 105 is 1.4-1.5.
- the layer 105 which is also composed of diacid oxide, is formed by vacuum evaporation.
- the thickness of the layer 105, which is also a diacid key, is several tens to several hundreds of nanometers.
- the high refractive index material is made of tantalum pentoxide (Ta 2 O 3) and titanium dioxide (TiO 2).
- the refractive index of the layer 107 which mainly consists of tantalum pentoxide, is 2.0-2.3.
- the layer 107 mainly composed of tantalum pentoxide force is formed by an ion plating method.
- the ion plating method uses gas plasma to ionize a part of evaporated particles and deposit it on a substrate biased at a negative high voltage. Since the vapor deposition material is accelerated by the electric field and adheres to the substrate, a film having a strong adhesion can be obtained.
- the thickness of the layer 107 made of aluminum is several tens of nanometers to several hundreds of nanometers.
- the material of the layer 107 a material in which the values of x and y of TaO are appropriately determined can be used.
- an acid titanium-based material can also be used.
- the multilayer film may have an antireflection function in addition to the laser damage suppressing function.
- FIG. 4 is a diagram showing a configuration of an ion plating apparatus for performing the ion plating method.
- An ion plating apparatus is disclosed in, for example, Japanese Patent Publication No. 1-48347.
- a capacitor 406 is formed by a base material holder 407, which is a conductive member supporting the base material 408, and a support member, which is a conductive member supporting the base material holder via an insulating member. Is configured.
- a high-frequency power source 401 is connected between the vacuum chamber 412 and the base material holder 407 via a blocking capacitor 403 and a matching box 402 to supply a high-frequency voltage.
- a DC power supply 404 is connected between the vacuum chamber 412 and the substrate holder 407 via a choke coil 405 so that the substrate holder 407 side becomes a cathode, and a DC noise voltage is supplied.
- the output of the high frequency power supply 401 is 500 W, and the voltage of the DC power supply 404 is 10 OV.
- the output of the high frequency power supply 401 is preferably a power S of 300-900W. By adjusting the output value within this range, the denseness of the film can be increased.
- Capacitor 406 force By operating together with a matching box 402 connected to a high-frequency power source 401 that supplies a high-frequency voltage into the chamber 412 to perform matching, the evaporation material 409 on the resistance heating board 410 and the base A stable electric field can be formed and maintained with the material 408. As a result, a high-purity 'high density' and high adhesion thin film can be formed on the surface of the substrate 408. [0022] At the bottom of the crucible including the resistance heating board 410, there is an electron gun 4 for electron beam heating.
- the outline of the film forming method is shown in the following table.
- No plasma generation refers to the case where the high frequency power supply 401 and the DC power supply 404 are not used. In this case, the film is formed by a vacuum deposition method.
- RH resistance heating
- EB electron beam heating
- oxygen is introduced into the vacuum chamber 412 by a valve (not shown).
- the oxygen introduction pressure setting is a setting of the oxygen pressure of the chamber.
- Oxygen partial pressure is 3.0 X 10
- A it is preferably in the range of ⁇ 5.0 X 10- 2 Pa.
- the light intensity change rate of the optical element described later can be set to an appropriate value.
- the gas in the vacuum chamber 412 is exhausted from the exhaust port 411.
- Ion plating method Ion plating method Vacuum deposition method
- Comparative Example 3 an optical element including a blue laser compatible plasticizer having no surface coated was also prepared.
- FIG. 2 is a diagram showing the results of measuring the light intensity change rate of the optical element after irradiating the optical element with a blue laser for 1000 hours at an ambient temperature of 25 ° C. Energy density of the blue laser radiation is about 120mWZmm 2.
- the light intensity change rate of the optical element can be expressed by the following equation.
- Light intensity change rate ((transmission after irradiation Z transmission before irradiation) 1) ⁇ 100%
- the rate of change in light intensity is
- FIG. 2B shows the measurement result of the light intensity change rate of the optical element of the present embodiment.
- a in FIG. 2 shows the measurement result of the light intensity change rate of Comparative Example 1.
- C in FIG. 2 shows the measurement result of the light intensity change rate of Comparative Example 2.
- D of FIG. 2 shows the measurement result of the light intensity change rate of the optical element of Comparative Example 3.
- the optical element of Comparative Example 3 was irradiated with a blue laser in a nitrogen atmosphere.
- FIG. 3 is a diagram showing the results of measuring the total wavefront aberration (RMS) of the optical element before and after irradiating the optical element with a blue laser for 1000 hours at an ambient temperature of 25 ° C.
- the energy density of the blue laser radiation is about 120mWZmm 2.
- the total wavefront aberration is a deviation of the wavefront from the reference spherical surface expressed as a standard deviation.
- the reference spherical surface refers to a spherical surface that takes the principal ray as the center and intersects the optical axis at the center of the entrance and exit pupils.
- the total wavefront aberration is measured by generating an interference fringe with an interferometer. Map force of fringes Calculates wavefront aberration.
- ⁇ 1 and ⁇ 2 show the measurement results of the total wavefront aberration of the optical element of the present embodiment.
- ⁇ 1 and ⁇ 2 in Fig. 3 show the measurement results of total wavefront aberration in Comparative Example 1.
- C1′C2 in FIG. 3 shows the measurement result of the total wavefront aberration of Comparative Example 2.
- D1 'D2 in Fig. 3 shows the measurement result of the total wavefront aberration of the optical element of Comparative Example 3.
- the optical element of Comparative Example 3 was irradiated with a blue laser in a nitrogen atmosphere.
- Al, Bl, Cl, and D1 show the measurement results of total wavefront aberration before blue laser irradiation
- A2, B2, C2, and D2 show the measurement results of total wavefront aberration after blue laser irradiation.
- the light intensity change rate is about 10% in Comparative Example 1 (A in FIG. 2), about 20% in Comparative Example 2 (C in FIG. 2), and about 20% in Comparative Example 3 (D in FIG. 2). Decrease by about 5%.
- the light intensity change is large in the case of Comparative Example 2 (C in Fig. 2) without using the ion plating method to form the high refractive index material layer! That is, the light transmission intensity of the optical element is greatly reduced.
- the reason why the light transmission intensity of the optical element decreases is that, when a high-power blue laser is irradiated for a long time, the chemical bond of the polymer plastic is broken (damaged) and the bonding state changes. it is conceivable that. If ion plating is used to form the high refractive index material layer, the above damage can be suppressed.
- the total wavefront aberration after irradiation with the high-power blue laser is about 2.5 times in the case of Comparative Example 1 ( ⁇ 1 and ⁇ 2 in Fig. 3) using PMMA plastic for the substrate.
- Comparative Examples 2 and 3 the total wavefront aberration after irradiating the same blue laser is almost unchanged. Because of this, optical elements using blue laser plastic In this case, it is considered that the shape of the surface of the optical element hardly changes. On the other hand, in the case of an optical element using PMMA plastic, the shape of the optical element surface changes, so the total wavefront aberration is thought to increase.
- the film is formed by the ion plating method! /, And the plasma state is generated by the 1S plasma CVD method, the ion beam assisted vapor deposition method, the sputtering method, or the like. Do film formation.
- the present invention is characterized in that a film is formed on a blue laser plastic material substrate by a method of generating plasma such as an ion plating method.
- a catalytic action that creates a function having an oxidative decomposition ability from moisture and oxygen uses a substrate that is a thermoplastic transparent olefin cycloolefin polymer having an antioxidant function, and is based on an ion plating method. It is thought to be suppressed by improving the film density by forming a film (forming an oxygen-impermeable film). Therefore, it can be estimated that substrate damage due to blue laser light is suppressed. The grounds for this estimation are also expected from the measurement results of the rate of change of light intensity when laser irradiation experiments are performed in a nitrogen atmosphere (D in Fig. 2). In addition, it is considered that the use of an acid-italic tantalum material further improves the film density in the film formation by the ion plating method.
- a multilayer film formed by the following film forming method will be described.
- a multilayer film formed by this film forming method is referred to as an improvement film 1.
- the film forming method shown in Table 3 is different from the film forming method shown in Table 1 in that a low refractive material layer made of diacidic silicon is formed while generating a plasma state in an argon atmosphere.
- a low refractive material layer is formed while generating a plasma state in an argon atmosphere, the substrate is exposed to a high temperature environment (e.g. 85 ° C) or a high temperature and high humidity environment (e.g. 60 ° C 90%) for a long time. In any case, this is more advantageous than an oxygen plasma atmosphere in which there is almost no change in transmittance.
- a multilayer film formed by the following film forming method will be described.
- a multilayer film formed by this film forming method is referred to as an improvement film 2.
- the improvement film 2 does not include an adhesion layer made of oxy-enzyme, and has a layer made of tantalum oxide-based material as the first layer on the substrate.
- the total film thickness of improvement film 1 is 547.5 nm.
- the total film thickness of good film 2 is 182. Onm.
- a diffractive optical element having a fine structure formed on the surface if the film thickness is thick, the influence on the shape of the fine structure increases.
- the improvement film 2 has a small film thickness and thus has little influence on the shape of the microstructure.
- a multilayer film having a structure similar to that of the improvement film 1 formed by a vacuum deposition method that does not generate plasma is referred to as a conventional film.
- a substrate made of a thermoplastic transparent olefin cycloolefin polymer, which is not a nitrogen-molded substrate described later, is referred to as a conventional substrate.
- FIG. 5 is a diagram showing the light transmittance change amount of the optical element in which the conventional film is formed on the conventional substrate and the optical element in which the improvement films 1 and 2 are formed on the conventional substrate.
- the optical transmittance change amount of the optical element formed with the improvement films 1 and 2 is greatly improved compared to the optical transmittance change amount of the optical element formed with the conventional film.
- FIG. 6 is a diagram showing oxygen transmission coefficients of an optical element in which a conventional film is formed on a conventional substrate and an optical element in which improvement films 1 and 2 are formed on a conventional substrate.
- the gas permeability coefficient can be expressed by the following equation.
- Gas permeation coefficient Gas permeation (standard volume) X thickness
- the unit of the oxygen transmission coefficient is cm 3 'mmZ (m 2 '24hr'atm).
- the oxygen transmission coefficient of the optical element in which the improved films 1 and 2 are formed on the conventional substrate is lower than the oxygen transmission coefficient of the optical element in which the conventional film is formed on the conventional substrate.
- An optical element in which the improvement films 1 and 2 are formed on the substrate is difficult to transmit oxygen.
- FIG. 7 shows the change in the amount of chemiluminescence after the blue laser was irradiated to the optical element in which the conventional film was formed on the conventional substrate and the optical element in which the improvement film 1 was formed on the conventional substrate.
- FIG. 8 is an enlarged view of a part of the time axis of FIG.
- the amount of chemiluminescence shows the relative magnitude. For up to 20 seconds after the irradiation is stopped, the chemiluminescence amount of the optical element in which the conventional film is formed on the conventional substrate is larger than the chemiluminescence amount of the optical element in which the improvement film 1 is formed on the conventional substrate.
- Chemiluminescence is believed to be caused by oxygen-mediated reactions.
- the optical element with the improved film 1 formed on the conventional substrate has a smaller oxygen transmission coefficient than the optical element with the conventional film formed on the conventional substrate, and is less likely to transmit oxygen. It is thought that the chemical reaction is suppressed.
- FIG. 9 is a diagram showing the amount of fluorescence emission between a conventional substrate and a nitrogen-molded substrate at a wavelength of about 320 nm when excited at a wavelength of 280 nm.
- the nitrogen-molded substrate is a substrate obtained by drying a thermoplastic transparent olefin cycloolefin polymer in nitrogen, transporting it in a nitrogen atmosphere, and molding it in the nitrogen atmosphere.
- the amount of fluorescent light emission is an arbitrary unit and indicates a relative size. Since the fluorescence emission is considered to be oxygen-mediated, the reason why the amount of fluorescence emission of the nitrogen-molded substrate is small is considered to be because the amount of oxygen absorbed is smaller than that of the conventional substrate.
- FIG. 10 is a diagram showing the amount of change in light transmittance between the conventional substrate and the nitrogen molded substrate.
- the amount of change in light transmittance of the nitrogen-shaped substrate is significantly smaller than the amount of change in light transmittance of the conventional substrate.
- the nitrogen molded substrate is less susceptible to damage from the blue laser irradiation than the conventional substrate.
- FIG. 11 is a diagram showing a change in light transmittance between an optical element in which the improvement film 1 is formed on a conventional substrate and an optical element in which the improvement film 1 is formed on a nitrogen-molded substrate.
- the amount of change in light transmittance can be kept very small by combining a low-oxygen absorption substrate with a nitrogen-molded substrate and an improved film 1 that hardly transmits oxygen.
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Abstract
Description
明 細 書 Specification
レーザ損傷抑制膜を有する光学素子 Optical element having laser damage suppressing film
技術分野 Technical field
[0001] 本発明は、青色レーザ対応プラスチック材料カゝら成る基板上に損傷抑制膜を備え た光学素子に関する。特に、短波長、パイパワー(30mWZmm2以上)の青色レー ザに使用される、レーザ損傷抑制膜を備えた光学素子に関する。 The present invention relates to an optical element having a damage suppression film on a substrate made of a blue laser compatible plastic material. In particular, the present invention relates to an optical element having a laser damage suppression film used for a blue laser with a short wavelength and a pi power (30 mWZmm 2 or more).
背景技術 Background art
[0002] 短波長、ハイパワーの青色レーザは、光ピックアップなどにおいて、ますます広く使 用されることが予想される。プラスチックは、一般的にレーザによる損傷を受けやすい 。したがって、短波長、ハイパワーの青色レーザを使用するデバイスの光学部品の一 部は、レーザによる損傷を避けるため、プラスチックを使用せずにガラスを使用してい る。このため、デバイスの価額が相対的に高くなり、巿場を拡大させる上での障害とな つている。 [0002] Short wavelength, high power blue lasers are expected to be used more and more widely in optical pickups and the like. Plastics are generally susceptible to laser damage. Therefore, some of the optical components in devices that use short-wavelength, high-power blue lasers use glass rather than plastic to avoid laser damage. For this reason, the price of the device is relatively high, which is an obstacle to expanding the plant.
[0003] 現在のところ、比較的低パワーの青色レーザに対応可能なプラスチック材料は各材 料メーカー力 供給されている力 ハイパワーの青色レーザに耐えうるプラスチック材 料は存在しない。 [0003] At present, plastic materials that can handle a relatively low-power blue laser have the power of each material manufacturer. There is no plastic material that can withstand a high-power blue laser.
[0004] 一方、ビデオカメラ、スチールカメラ、眼鏡などに使用されるプラスチックレンズの表 面には、反射防止膜が形成されることが多い。このような反射防止膜は、低屈折率の 層と高屈折率の層とを交互に積層した多層膜から形成される。このような多層膜は、 特開平 11— 30703号公報、特開平 11— 171596号公報、特開平 11 326634号 公報、特開 2002— 71903号公報、特開 2003— 98308号公報および特開 2003— [0004] On the other hand, an antireflection film is often formed on the surface of a plastic lens used in a video camera, a still camera, glasses, or the like. Such an antireflection film is formed of a multilayer film in which low refractive index layers and high refractive index layers are alternately laminated. Such multilayer films are disclosed in JP-A-11-30703, JP-A-11-171596, JP-A-11 326634, JP-A-2002-71903, JP-A-2003-98308 and JP-A-2003-.
248102号公報などに記載されている。しかし、従来の反射防止膜は、ハイパワーの 青色レーザによる損傷を防止することはできな 、。 This is described in, for example, 248102. However, conventional anti-reflection coatings cannot prevent damage from high-power blue lasers.
[0005] ハイパワーの青色レーザに耐えうるプラスチック材料は存在しないので、ハイパワー の青色レーザに耐えうる光学素子をプラスチック材料で実現しょうとすれば、反射防 止膜のようなレーザ損傷抑制膜をプラスチック材料力もなる基板の表面に形成する 方法が考えられる。 発明の開示 [0005] Since there is no plastic material that can withstand high-power blue lasers, if an optical element that can withstand high-power blue lasers is to be realized with plastic materials, a laser damage suppression film such as an anti-reflective film is required. A method of forming on the surface of a substrate that also has plastic material strength can be considered. Disclosure of the invention
[0006] 上記の背景技術の下で、ハイパワーの青色レーザに耐えうるレーザ損傷抑制膜を 、プラスチックの基板上に備えた光学素子に対するニーズがある。 [0006] Under the above background art, there is a need for an optical element provided with a laser damage suppression film on a plastic substrate that can withstand a high-power blue laser.
[0007] 本発明による光学素子は、プラスチック基板上に、低屈折材料からなる層と高屈折 材料力もなる層を交互に積層した多層膜を備える反射防止用光学素子であって、 10 00時間、 25°Cの周囲温度でエネルギー密度 120mWZmm2の青色レーザを連続 照射した後のレーザ透過率変化量が 2%以下であるように、酸素透過係数を小さくし ている。 [0007] An optical element according to the present invention is an antireflection optical element comprising a multilayer film in which a layer made of a low refractive material and a layer having a high refractive material force are alternately laminated on a plastic substrate. The oxygen transmission coefficient is reduced so that the laser transmittance change after continuous irradiation with a blue laser with an energy density of 120 mWZmm 2 at an ambient temperature of 25 ° C is 2% or less.
[0008] 本発明による光学素子は、酸素透過係数を小さくしているので、青色レーザの照射 による損傷を受けにくい。 [0008] Since the optical element according to the present invention has a small oxygen transmission coefficient, it is not easily damaged by blue laser irradiation.
図面の簡単な説明 Brief Description of Drawings
[0009] [図 1]本発明の 1実施形態によるレーザ損傷抑制膜を備えた光学素子の構成を示す 図である。 FIG. 1 is a diagram showing a configuration of an optical element provided with a laser damage suppressing film according to one embodiment of the present invention.
[図 2]光学素子に青色レーザを 1000時間照射した後の、光学素子の光強度変化率 を測定した結果を示す図である。 FIG. 2 is a diagram showing the result of measuring the light intensity change rate of an optical element after irradiating the optical element with a blue laser for 1000 hours.
[図 3]光学素子に青色レーザを 1000時間照射する前後の、光学素子のトータル波面 収差 (RMS)を測定した結果を示す図である。 FIG. 3 is a diagram showing the result of measuring the total wavefront aberration (RMS) of the optical element before and after irradiating the optical element with a blue laser for 1000 hours.
[図 4]イオンプレーティング法を実施するためのイオンプレーティング装置の構成を示 す図である。 FIG. 4 is a diagram showing a configuration of an ion plating apparatus for performing an ion plating method.
[図 5]従来基板上に従来膜を成膜した光学素子と従来基板上に改善膜 1、 2を成膜し た光学素子の光透過率変化量を示す図である。 FIG. 5 is a diagram showing the amount of change in light transmittance of an optical element in which a conventional film is formed on a conventional substrate and an optical element in which improvement films 1 and 2 are formed on a conventional substrate.
[図 6]従来基板上に従来膜を成膜した光学素子と従来基板上に改善膜 1、 2を成膜し た光学素子の酸素透過係数を示す図である。 FIG. 6 is a diagram showing oxygen transmission coefficients of an optical element in which a conventional film is formed on a conventional substrate and an optical element in which improvement films 1 and 2 are formed on a conventional substrate.
[図 7]従来基板上に従来膜を成膜した光学素子と従来基板上に改善膜 1を成膜した 光学素子に青色レーザを照射し、停止した後の化学発光量の変化を示す図である。 [Fig. 7] A diagram showing the change in the amount of chemiluminescence after irradiation with a blue laser on an optical element in which a conventional film is formed on a conventional substrate and an optical element in which an improvement film 1 is formed on a conventional substrate, and then stopped. is there.
[図 8]図 7の一部の時間軸を拡大した図である。 FIG. 8 is an enlarged view of a part of the time axis in FIG.
[図 9]従来基板と窒素成形基板との光透過率変化量を示す図である。 FIG. 9 is a view showing a change in light transmittance between a conventional substrate and a nitrogen molded substrate.
[図 10]従来基板と窒素成形基板との、波長 280nm励起での波長 320nm前後の蛍 光発光量を示す図である。 [Figure 10] A conventional substrate and a nitrogen-molded substrate with a wavelength of about 280 nm when excited at a wavelength of 280 nm. It is a figure which shows the light emission amount.
[図 11]従来基板上に改善膜 1を成膜した光学素子と窒素成形基板上に改善膜 1を成 膜した光学素子との光透過率変化量を示す図である。 FIG. 11 is a diagram showing a change in light transmittance between an optical element in which the improvement film 1 is formed on a conventional substrate and an optical element in which the improvement film 1 is formed on a nitrogen-molded substrate.
発明を実施するための最良の形態 BEST MODE FOR CARRYING OUT THE INVENTION
[0010] 図 1は、本発明の 1実施形態によるレーザ損傷抑制膜を備えた光学素子の構成を 示す図である。図 1において、青色レーザ対応プラスチック材料力も成る基板 101上 に、一酸ィ匕ケィ素(SiO)からなる層 103が形成される。一酸化ケィ素からなる層 103 は、プラスチック材料力もなる基板 101と、その上に形成される層との密着性を向上さ せる機能を果たす。ー酸ィ匕ケィ素からなる層 103の上には、低屈折材料から成る層 1 05と高屈折材料カゝら成る層 107とが交互に積層される。本実施形態においては、低 屈折材料カゝら成る層 105は 3層、高屈折材料カゝら成る層 107は 2層形成される。 FIG. 1 is a diagram showing a configuration of an optical element provided with a laser damage suppressing film according to one embodiment of the present invention. In FIG. 1, a layer 103 made of monoacidic silicon (SiO) is formed on a substrate 101 that also has a plastic material strength for blue laser. The layer 103 made of silicon monoxide fulfills a function of improving the adhesion between the substrate 101 having plastic material strength and the layer formed thereon. On the layer 103 made of an oxide layer, layers 105 made of a low refractive material and layers 107 made of a high refractive material cover are alternately laminated. In this embodiment, three layers 105 made of a low refractive material cover and three layers 107 made of a high refractive material cover are formed.
[0011] ここで、青色レーザ対応プラスチック材料は、ォレフィン系材料である。より具体的 には、酸ィ匕防止機能を有する熱可塑性透明榭脂シクロォレフィンポリマーである。 Here, the blue laser compatible plastic material is an olefin-based material. More specifically, it is a thermoplastic transparent olefin cycloolefin polymer having a function of preventing acidification.
[0012] 一酸化ケィ素からなる層 103は、基板 101上に真空蒸着法によって形成する。真 空蒸着法は、薄膜にしたい材料 (この場合は、一酸化ケィ素)を抵抗線で加熱するか 、または当該材料に電子ビームを照射し、加熱蒸発させる。この蒸発させた材料を基 板上に付着 (堆積)させて、薄膜を形成する。一酸化ケィ素からなる層 103の厚みは 、数百ナノメータ程度である。 The layer 103 made of silicon monoxide is formed on the substrate 101 by a vacuum deposition method. In the vacuum evaporation method, a material to be formed into a thin film (in this case, silicon monoxide) is heated with a resistance wire, or the material is irradiated with an electron beam and evaporated by heating. The evaporated material is deposited (deposited) on the substrate to form a thin film. The thickness of the layer 103 made of silicon monoxide is about several hundred nanometers.
[0013] 低屈折率材料は、本実施形態では二酸化ケイ素(SiO )である。二酸化ケイ素から [0013] The low refractive index material is silicon dioxide (SiO 2) in the present embodiment. From silicon dioxide
2 2
成る層 105の屈折率は、 1. 4—1. 5である。二酸ィ匕ケィ素カも成る層 105は、真空 蒸着法によって形成する。二酸ィ匕ケィ素カもなる層 105の厚みは、数十ナノメータか ら数百ナノメータである。 The refractive index of the layer 105 is 1.4-1.5. The layer 105, which is also composed of diacid oxide, is formed by vacuum evaporation. The thickness of the layer 105, which is also a diacid key, is several tens to several hundreds of nanometers.
[0014] 高屈折率材料は、本実施形態では五酸ィ匕タンタル (Ta O )に二酸化チタン (TiO In the present embodiment, the high refractive index material is made of tantalum pentoxide (Ta 2 O 3) and titanium dioxide (TiO 2).
2 5 2 2 5 2
)を微量カ卩えたものである。主に五酸化タンタル力も成る層 107の屈折率は、 2. 0- 2. 3である。主に五酸ィ匕タンタル力も成る層 107は、イオンプレーティング法によって 形成する。イオンプレーティング法は、ガスプラズマを利用して、蒸発粒子の一部をィ オンィ匕し、負の高電圧にバイアスした基板に蒸着する方法である。蒸着物質は、電界 で加速されて基板に付着するので、付着力の強い膜が得られる。主に五酸化タンタ ルから成る層 107の厚みは、数十ナノメータから数百ナノメータである。 ). The refractive index of the layer 107, which mainly consists of tantalum pentoxide, is 2.0-2.3. The layer 107 mainly composed of tantalum pentoxide force is formed by an ion plating method. The ion plating method uses gas plasma to ionize a part of evaporated particles and deposit it on a substrate biased at a negative high voltage. Since the vapor deposition material is accelerated by the electric field and adheres to the substrate, a film having a strong adhesion can be obtained. Mainly tantalum pentoxide The thickness of the layer 107 made of aluminum is several tens of nanometers to several hundreds of nanometers.
[0015] 層 107の材料として、 Ta Oの xと yの値を適切に定めたものも使用することができる [0015] As the material of the layer 107, a material in which the values of x and y of TaO are appropriately determined can be used.
[0016] 高屈折率材料として、酸ィ匕チタン系材料を使用することもできる。 [0016] As the high refractive index material, an acid titanium-based material can also be used.
[0017] 屈折率の異なる層を交互に積層することにより、多数の反射面を構成し、多数の反 射面で反射された外光が互いに干渉して相殺し合い、反射防止効果が得られるよう にしてもよい。また、それぞれの層の光路長(= 層厚 ·屈折率)を異ならせ、広い波 長範囲で干渉が生じるようにして、外光の広 、波長範囲で反射防止効果が得られる ようにしてもよい。このようにして、多層膜がレーザ損傷抑制機能の他に反射防止機 能を備えるようにしてもよい。 [0017] By alternately laminating layers having different refractive indexes, a large number of reflection surfaces are formed, and external light reflected by the large number of reflection surfaces interferes with each other to cancel each other, thereby obtaining an antireflection effect. It may be. In addition, the optical path length (= layer thickness / refractive index) of each layer is made different so that interference occurs in a wide wavelength range so that an antireflection effect can be obtained in a wide and wavelength range of outside light. Good. In this way, the multilayer film may have an antireflection function in addition to the laser damage suppressing function.
[0018] 図 4は、イオンプレーティング法を実施するためのイオンプレーティング装置の構成 を示す図である。イオンプレーティング装置は、たとえば、特公平 1-48347号に開示 されている。真空チャンバ 412内に、基材 408を支持する導電性部材カゝらなる基材ホ ルダ 407と、絶縁部材を介して基材ホルダを支持する導電性部材カゝらなる支持部材 とによりコンデンサ 406が構成される。 FIG. 4 is a diagram showing a configuration of an ion plating apparatus for performing the ion plating method. An ion plating apparatus is disclosed in, for example, Japanese Patent Publication No. 1-48347. In the vacuum chamber 412, a capacitor 406 is formed by a base material holder 407, which is a conductive member supporting the base material 408, and a support member, which is a conductive member supporting the base material holder via an insulating member. Is configured.
[0019] 真空チャンバ 412と基材ホルダ 407との間には、ブロッキングコンデンサ 403および マッチングボックス 402を介して高周波電源 401が接続され、高周波電圧が供給され ている。真空チャンバ 412と基材ホルダ 407との間には、基材ホルダ 407側が陰極と なるように、チョークコイル 405を介して直流電源 404が接続され、直流ノィァス電圧 が供給されている。高周波電源 401の出力は、 500W、直流電源 404の電圧は、 10 OVである。 A high-frequency power source 401 is connected between the vacuum chamber 412 and the base material holder 407 via a blocking capacitor 403 and a matching box 402 to supply a high-frequency voltage. A DC power supply 404 is connected between the vacuum chamber 412 and the substrate holder 407 via a choke coil 405 so that the substrate holder 407 side becomes a cathode, and a DC noise voltage is supplied. The output of the high frequency power supply 401 is 500 W, and the voltage of the DC power supply 404 is 10 OV.
[0020] 高周波電源 401の出力は、 300— 900Wであるの力 S好ましい。この範囲で、出力の 値を調整することにより、膜の緻密性を高めることができる。 [0020] The output of the high frequency power supply 401 is preferably a power S of 300-900W. By adjusting the output value within this range, the denseness of the film can be increased.
[0021] コンデンサ 406力 チャンバ 412内に高周波電圧を供給する高周波電源 401に接 続されたマッチングボックス 402とともに動作してマッチングを行うようにすることにより 、抵抗加熱ボード 410上の蒸発材料 409と基材 408との間に安定した電界を形成し 維持することができる。この結果、基材 408の表面に、高純度 '高密度'高密着な薄 膜を成膜することができる。 [0022] 抵抗加熱ボード 410を含むるつぼの下部には、電子ビーム加熱のための電子銃 4[0021] Capacitor 406 force By operating together with a matching box 402 connected to a high-frequency power source 401 that supplies a high-frequency voltage into the chamber 412 to perform matching, the evaporation material 409 on the resistance heating board 410 and the base A stable electric field can be formed and maintained with the material 408. As a result, a high-purity 'high density' and high adhesion thin film can be formed on the surface of the substrate 408. [0022] At the bottom of the crucible including the resistance heating board 410, there is an electron gun 4 for electron beam heating.
101が設置されている。 101 is installed.
[0023] 成膜方法の概要を以下の表に示す。 The outline of the film forming method is shown in the following table.
[表 1] [table 1]
[0024] プラズマ発生無しとは、高周波電源 401および直流電源 404を使用しない場合を いう。この場合は、真空蒸着法により成膜することになる。 “No plasma generation” refers to the case where the high frequency power supply 401 and the DC power supply 404 are not used. In this case, the film is formed by a vacuum deposition method.
[0025] ここで、 RHとは、抵抗加熱、 EBとは、電子ビーム加熱である。 [0025] Here, RH is resistance heating, and EB is electron beam heating.
[0026] また、成膜の際、真空チャンバ 412内に、図示しないバルブにより酸素を導入する。 [0026] During film formation, oxygen is introduced into the vacuum chamber 412 by a valve (not shown).
酸素導入圧力設定とは、チャンバの酸素圧力の設定である。酸素分圧値は 3.0 X 10 The oxygen introduction pressure setting is a setting of the oxygen pressure of the chamber. Oxygen partial pressure is 3.0 X 10
〜5.0 X 10— 2Paの範囲内であるのが好ましい。酸素分圧値を上記の範囲で調整するこ とにより、後に説明する光学素子の光強度変化率を適切な値とすることができる。真 空チャンバ 412内のガスは、排気口 411から排気される。 A it is preferably in the range of ~5.0 X 10- 2 Pa. By adjusting the oxygen partial pressure value within the above range, the light intensity change rate of the optical element described later can be set to an appropriate value. The gas in the vacuum chamber 412 is exhausted from the exhaust port 411.
[0027] 図 1に示した実施形態の光学素子と比較するために、以下の表 2に示す 2種類の光 学素子 (比較例 1および 2)を準備した。 In order to compare with the optical element of the embodiment shown in FIG. 1, two types of optical elements (Comparative Examples 1 and 2) shown in Table 2 below were prepared.
[表 2] 本実施形態 比較例 1 比較例 2 基板の材料 青色レ一ザ対 J心 青色レ一ザ対 J心 [Table 2] This embodiment Comparative example 1 Comparative example 2 Substrate material Blue laser vs. J core Blue laser vs. J core
PM MA系プラスチック PM MA plastic
プラスチック プラスチック 高屈折率材料層 Plastic Plastic High refractive index material layer
イオンプレーティング法 イオンプレ一ティング法 真空蒸着法 の成膜方法 Ion plating method Ion plating method Vacuum deposition method
[0028] さらに、比較例 3として、表面にコートを全く行っていない青色レーザ対応プラスチッ タカも成る光学素子も準備した。 [0028] Furthermore, as Comparative Example 3, an optical element including a blue laser compatible plasticizer having no surface coated was also prepared.
[0029] 図 2は、光学素子に青色レーザを 1000時間、 25°Cの周囲温度で照射した後の、 光学素子の光強度変化率を測定した結果を示す図である。青色レーザ照射のエネ ルギー密度は、約 120mWZmm2である。ここで、光学素子の光強度変化率は、以 下の式で表せる。 [0029] FIG. 2 is a diagram showing the results of measuring the light intensity change rate of the optical element after irradiating the optical element with a blue laser for 1000 hours at an ambient temperature of 25 ° C. Energy density of the blue laser radiation is about 120mWZmm 2. Here, the light intensity change rate of the optical element can be expressed by the following equation.
[0030] 光強度変化率 = ( (照射後透過率 Z照射前透過率) 1) · 100 % [0030] Light intensity change rate = ((transmission after irradiation Z transmission before irradiation) 1) · 100%
一例として、照射前の透過率が 90%であり、照射後の透過率が 80%であれば、光強 度変化率は、 As an example, if the transmittance before irradiation is 90% and the transmittance after irradiation is 80%, the rate of change in light intensity is
( (0. 80/0. 90) - 1) · 100 = —11. 1 % ((0. 80/0. 90)-1) 100 = —11. 1%
となる。 It becomes.
[0031] 図 2の Bは、本実施形態の光学素子の光強度変化率の測定結果を示す。図 2の A は、比較例 1の光強度変化率の測定結果を示す。図 2の Cは、比較例 2の光強度変 化率の測定結果を示す。図 2の Dは、比較例 3の光学素子の光強度変化率の測定結 果を示す。比較例 3の光学素子は、窒素雰囲気中において、青色レーザを照射した FIG. 2B shows the measurement result of the light intensity change rate of the optical element of the present embodiment. A in FIG. 2 shows the measurement result of the light intensity change rate of Comparative Example 1. C in FIG. 2 shows the measurement result of the light intensity change rate of Comparative Example 2. D of FIG. 2 shows the measurement result of the light intensity change rate of the optical element of Comparative Example 3. The optical element of Comparative Example 3 was irradiated with a blue laser in a nitrogen atmosphere.
[0032] 図 3は、光学素子に青色レーザを 1000時間、 25°Cの周囲温度で照射する前後の 、光学素子のトータル波面収差 (RMS)を測定した結果を示す図である。青色レーザ 照射のエネルギー密度は、約 120mWZmm2である。 [0032] FIG. 3 is a diagram showing the results of measuring the total wavefront aberration (RMS) of the optical element before and after irradiating the optical element with a blue laser for 1000 hours at an ambient temperature of 25 ° C. The energy density of the blue laser radiation is about 120mWZmm 2.
[0033] トータル波面収差は、参照球面からの波面のズレを標準偏差で表したものである。 [0033] The total wavefront aberration is a deviation of the wavefront from the reference spherical surface expressed as a standard deviation.
ここで、参照球面とは、主光線を中心に考え、入射および射出瞳の中心で光軸と交 わる球面をいう。トータル波面収差の測定は、干渉計で干渉縞を発生させてその干 渉縞のマップ力 波面収差を算出する。 Here, the reference spherical surface refers to a spherical surface that takes the principal ray as the center and intersects the optical axis at the center of the entrance and exit pupils. The total wavefront aberration is measured by generating an interference fringe with an interferometer. Map force of fringes Calculates wavefront aberration.
[0034] 図 3の Β1 ·Β2は、本実施形態の光学素子のトータル波面収差の測定結果を示す。 In FIG. 3, Β1 and Β2 show the measurement results of the total wavefront aberration of the optical element of the present embodiment.
図 3の Α1 ·Α2は、比較例 1のトータル波面収差の測定結果を示す。図 3の C1 'C2は 、比較例 2のトータル波面収差の測定結果を示す。図 3の D1 'D2は、比較例 3の光 学素子のトータル波面収差の測定結果を示す。比較例 3の光学素子は、窒素雰囲 気中において、青色レーザを照射した。 Al、 Bl、 Cl、 D1は、青色レーザ照射前の トータル波面収差の測定結果を示し、 A2、 B2、 C2、 D2は、青色レーザ照射後のト 一タル波面収差の測定結果を示す。 Α1 and Α2 in Fig. 3 show the measurement results of total wavefront aberration in Comparative Example 1. C1′C2 in FIG. 3 shows the measurement result of the total wavefront aberration of Comparative Example 2. D1 'D2 in Fig. 3 shows the measurement result of the total wavefront aberration of the optical element of Comparative Example 3. The optical element of Comparative Example 3 was irradiated with a blue laser in a nitrogen atmosphere. Al, Bl, Cl, and D1 show the measurement results of total wavefront aberration before blue laser irradiation, and A2, B2, C2, and D2 show the measurement results of total wavefront aberration after blue laser irradiation.
[0035] 図 2および図 3の測定結果から以下の点が明らかとなる。本実施形態の場合には、 ハイパワーの青色レーザを 1000時間照射しても、光強度はほとんど変化しない。ま た、トータル波面収差も、照射の前後でほとんど変化しない。 [0035] The following points become clear from the measurement results of FIGS. In the case of the present embodiment, the light intensity hardly changes even when irradiated with a high-power blue laser for 1000 hours. Also, the total wavefront aberration hardly changes before and after irradiation.
[0036] 光強度変化率は、比較例 1の場合(図 2の A)約 10%、比較例 2の場合(図 2の C) 約 20%、比較例 3の場合(図 2の D)約 5%減少する。高屈折率材料層の成膜にィォ ンプレーティング法を使用しな 、比較例 2の場合(図 2の C)に光強度変化が大き!/、。 すなわち、光学素子の光透過強度が大きく減少する。光学素子の光透過強度が減 少する理由は、ハイパワーの青色レーザを長時間照射した場合に、高分子であるプ ラスチックの化学結合が破壊 (損傷)されて結合状態が変化するためであると考えら れる。高屈折率材料層の成膜にイオンプレーティング法を使用すれば、上記の損傷 が抑制される。 [0036] The light intensity change rate is about 10% in Comparative Example 1 (A in FIG. 2), about 20% in Comparative Example 2 (C in FIG. 2), and about 20% in Comparative Example 3 (D in FIG. 2). Decrease by about 5%. The light intensity change is large in the case of Comparative Example 2 (C in Fig. 2) without using the ion plating method to form the high refractive index material layer! That is, the light transmission intensity of the optical element is greatly reduced. The reason why the light transmission intensity of the optical element decreases is that, when a high-power blue laser is irradiated for a long time, the chemical bond of the polymer plastic is broken (damaged) and the bonding state changes. it is conceivable that. If ion plating is used to form the high refractive index material layer, the above damage can be suppressed.
[0037] 比較例 3のコート無しの光学素子を窒素雰囲気中においた場合には、光透過強度 の減少は比較的小さい。このことから、空気中に存在する窒素以外の物質が、光学 素子の損傷を加速していることが推察される。したがって、高屈折率材料層の成膜に イオンプレーティング法を使用することにより、光学素子の損傷を加速する空気中の 物質が光学素子に混入する割合を低下させることができると考えられる。 [0037] When the uncoated optical element of Comparative Example 3 is placed in a nitrogen atmosphere, the decrease in light transmission intensity is relatively small. This suggests that substances other than nitrogen present in the air accelerate the damage to the optical element. Therefore, it is considered that the rate at which substances in the air that accelerate damage to the optical element are mixed into the optical element can be reduced by using the ion plating method for forming the high refractive index material layer.
[0038] ハイパワーの青色レーザを照射した後のトータル波面収差は、基板に PMMA系プ ラスチックを使用した比較例 1の場合(図 3の Α1 ·Α2)に、約 2. 5倍となる。ノ、ィパヮ 一の青色レーザを照射した後のトータル波面収差は、比較例 2および 3の場合には、 ほとんど変化しない。このことから、青色レーザ対応プラスチックを使用した光学素子 の場合には、光学素子表面の形状は、ほとんど変化しないと考えられる。他方、 PM MA系プラスチックを使用した光学素子の場合には、光学素子表面の形状が変化す るため、トータル波面収差が大きくなると考えられる。 [0038] The total wavefront aberration after irradiation with the high-power blue laser is about 2.5 times in the case of Comparative Example 1 (Α1 and Α2 in Fig. 3) using PMMA plastic for the substrate. In the case of Comparative Examples 2 and 3, the total wavefront aberration after irradiating the same blue laser is almost unchanged. Because of this, optical elements using blue laser plastic In this case, it is considered that the shape of the surface of the optical element hardly changes. On the other hand, in the case of an optical element using PMMA plastic, the shape of the optical element surface changes, so the total wavefront aberration is thought to increase.
[0039] 上記の実施形態にお!、ては、イオンプレーティング法によって成膜が行われて!/、る 1S プラズマ CVD法、イオンビームアシスト蒸着法およびスパッタ法などによりプラズ マ状態を発生させて成膜を行ってもょ ヽ。 [0039] In the above embodiment, the film is formed by the ion plating method! /, And the plasma state is generated by the 1S plasma CVD method, the ion beam assisted vapor deposition method, the sputtering method, or the like. Do film formation.
[0040] 本発明は、青色レーザ対応プラスチック材料の基板上に、イオンプレーティング法 などのプラズマを発生させる方法で膜を形成する点に特徴がある。 [0040] The present invention is characterized in that a film is formed on a blue laser plastic material substrate by a method of generating plasma such as an ion plating method.
[0041] この特徴により、光学素子のレーザによる損傷の抑制について、上記の著しい効果 が生じる。この効果を生じるメカニズムは以下のように考えられる。 [0041] Due to this feature, the above-described remarkable effect is produced in suppressing damage to the optical element by the laser. The mechanism that produces this effect is considered as follows.
[0042] 水分や酸素から酸化分解力を持つ働きを作りだす作用をする触媒作用が、酸化防 止機能を有する熱可塑性透明榭脂シクロォレフィンポリマーである基板を用い、かつ 、イオンプレーティング法による成膜により膜緻密度を向上させること (酸素不透過膜 の形成)により、抑制されていると考えられる。よって青色レーザ光による基板損傷が 抑制されると推定できる。この推定原因となる根拠は窒素雰囲気中でレーザ照射実 験を行った時の光強度変化率の測定結果 (図 2の D)からも予想される。また、酸ィ匕タ ンタル系材料を使用することにより、イオンプレーティング法による成膜において膜の 緻密性が更に向上すると考えられる。 [0042] A catalytic action that creates a function having an oxidative decomposition ability from moisture and oxygen uses a substrate that is a thermoplastic transparent olefin cycloolefin polymer having an antioxidant function, and is based on an ion plating method. It is thought to be suppressed by improving the film density by forming a film (forming an oxygen-impermeable film). Therefore, it can be estimated that substrate damage due to blue laser light is suppressed. The grounds for this estimation are also expected from the measurement results of the rate of change of light intensity when laser irradiation experiments are performed in a nitrogen atmosphere (D in Fig. 2). In addition, it is considered that the use of an acid-italic tantalum material further improves the film density in the film formation by the ion plating method.
[0043] 他の実施形態として、以下の成膜方法によって成膜した多層膜にっ 、て説明する 。この成膜方法によって成膜した多層膜を改善膜 1と呼称する。 [0043] As another embodiment, a multilayer film formed by the following film forming method will be described. A multilayer film formed by this film forming method is referred to as an improvement film 1.
[表 3] [Table 3]
02導入 Ar導入 蒸着時間 02 Introduction Ar introduction Deposition time
成膜レート プラズマ 膜構成 圧力設定 圧力設定 膜厚 (目安) (分) 蒸発源 Deposition rate Plasma Film configuration Pressure setting Pressure setting Film thickness (guideline) (min) Evaporation source
設定 発生 Setting occurrence
(Pa) (Pa) (目安) (Pa) (Pa) (approximate)
1層目 SiO 2.80E-02 3.0 A /S 2440 A 13.5 RH なし 1st layer SiO 2.80E-02 3.0 A / S 2440 A 13.5 RH None
2層目 Si02 6.00E-03 10A/S 1650 A 2.8 EB あり 酸化タン Second layer Si02 6.00E-03 10A / S 1650 A 2.8 With EB Tan oxide
3層目 タル系 3.00E-02 3.0 A /S 125A 1.7 EB あり 材料 3rd layer Tal system 3.00E-02 3.0 A / S 125A 1.7 With EB Material
4層目 Si02 6.00E-03 10A/S 300 A 0.6 EB あり 酸化タン 4th layer Si02 6.00E-03 10A / S 300 A 0.6 EB Yes Tan oxide
5層目 タル系 3.00E-02 3.0 A /S 330 A 1.8 EB あり 材料 5th layer Tal system 3.00E-02 3.0 A / S 330 A 1.8 With EB Material
6層目 Si02 6.00E-03 10A/S 630 A 1.0 EB あり 合計膜厚 5475 A 6th layer Si02 6.00E-03 10A / S 630 A 1.0 With EB Total film thickness 5475 A
[0044] 表 3の成膜方法は、二酸ィヒケィ素カゝらなる低屈折材料層をアルゴン雰囲気でプラズ マ状態を発生させながら成膜する点が、表 1の成膜方法と異なる。低屈折材料層を 成膜する際のアルゴン分圧値は 3.0 X 10— 3〜5.0 X 10— ¥aの範囲内であるのが好まし い。低屈折材料層をアルゴン雰囲気でプラズマ状態を発生させながら成膜すると、高 温環境下 (例 85°C)又は高温高湿環境下 (例 60°C 90%)に長時間さらされた基板であつ ても透過率変化量が殆ど無ぐ酸素プラズマ雰囲気よりも有利である。 [0044] The film forming method shown in Table 3 is different from the film forming method shown in Table 1 in that a low refractive material layer made of diacidic silicon is formed while generating a plasma state in an argon atmosphere. Argon partial at the time of forming the low refractive index material layer pressure value 3.0 X 10- 3 ~5.0 X 10- ¥ a in the range and even not preferable for. When a low refractive material layer is formed while generating a plasma state in an argon atmosphere, the substrate is exposed to a high temperature environment (e.g. 85 ° C) or a high temperature and high humidity environment (e.g. 60 ° C 90%) for a long time. In any case, this is more advantageous than an oxygen plasma atmosphere in which there is almost no change in transmittance.
[0045] さらに他の実施形態として、以下の成膜方法によって成膜した多層膜について説 明する。この成膜方法によって成膜した多層膜を改善膜 2と呼称する。 As still another embodiment, a multilayer film formed by the following film forming method will be described. A multilayer film formed by this film forming method is referred to as an improvement film 2.
[表 4] [Table 4]
改善膜 2は、ー酸ィ匕ケィ素からなる密着層を含まず、基板上の 1層目に酸化タンタ ル系材料力 なる層を備えている。改善膜 1の合計膜厚は、 547. 5nmであるが、改 善膜 2の合計膜厚は、 182. Onmである。表面に微細構造が形成されている回折光 学素子では、膜厚が厚いと微細構造の形状への影響が大きくなる。改善膜 2は、膜 厚が薄いので、微細構造の形状への影響が小さい。 The improvement film 2 does not include an adhesion layer made of oxy-enzyme, and has a layer made of tantalum oxide-based material as the first layer on the substrate. The total film thickness of improvement film 1 is 547.5 nm. The total film thickness of good film 2 is 182. Onm. In a diffractive optical element having a fine structure formed on the surface, if the film thickness is thick, the influence on the shape of the fine structure increases. The improvement film 2 has a small film thickness and thus has little influence on the shape of the microstructure.
[0047] プラズマを発生させない真空蒸着法により成膜した、改善膜 1と同様の構造の多層 膜を従来膜と呼称する。 [0047] A multilayer film having a structure similar to that of the improvement film 1 formed by a vacuum deposition method that does not generate plasma is referred to as a conventional film.
[0048] 後に説明する窒素成形基板ではない、熱可塑性透明榭脂シクロォレフィンポリマー からなる基板を従来基板と呼称する。 [0048] A substrate made of a thermoplastic transparent olefin cycloolefin polymer, which is not a nitrogen-molded substrate described later, is referred to as a conventional substrate.
[0049] 図 5は、従来基板上に従来膜を成膜した光学素子と従来基板上に改善膜 1、 2を成 膜した光学素子の光透過率変化量を示す図である。改善膜 1、 2を成膜した光学素 子の光透過率変化量は、従来膜を成膜した光学素子の光透過率変化量と比較して 大幅に改善している。 FIG. 5 is a diagram showing the light transmittance change amount of the optical element in which the conventional film is formed on the conventional substrate and the optical element in which the improvement films 1 and 2 are formed on the conventional substrate. The optical transmittance change amount of the optical element formed with the improvement films 1 and 2 is greatly improved compared to the optical transmittance change amount of the optical element formed with the conventional film.
[0050] 図 6は、従来基板上に従来膜を成膜した光学素子と従来基板上に改善膜 1、 2を成 膜した光学素子の酸素透過係数を示す図である。一般に気体透過係数は、以下の 式で表せる。 FIG. 6 is a diagram showing oxygen transmission coefficients of an optical element in which a conventional film is formed on a conventional substrate and an optical element in which improvement films 1 and 2 are formed on a conventional substrate. In general, the gas permeability coefficient can be expressed by the following equation.
[0051] 気体透過係数 = 気体透過量 (標準状態の体積) X厚さ [0051] Gas permeation coefficient = Gas permeation (standard volume) X thickness
Z (圧力差 X透過面積 X時間) Z (pressure difference X permeation area X hours)
図 6において、酸素透過係数の単位は、 cm3'mmZ (m2' 24hr'atm)である。 In FIG. 6, the unit of the oxygen transmission coefficient is cm 3 'mmZ (m 2 '24hr'atm).
[0052] 従来基板上に改善膜 1、 2を成膜した光学素子の酸素透過係数は、従来基板上に 従来膜を成膜した光学素子の酸素透過係数と比較して低下しており、従来基板上に 改善膜 1、 2を成膜した光学素子は酸素を透過しにくい。 [0052] The oxygen transmission coefficient of the optical element in which the improved films 1 and 2 are formed on the conventional substrate is lower than the oxygen transmission coefficient of the optical element in which the conventional film is formed on the conventional substrate. An optical element in which the improvement films 1 and 2 are formed on the substrate is difficult to transmit oxygen.
[0053] この結果、青色レーザを光学素子に照射した場合に、酸素を媒介とした化学反応 により基板材料の劣化が加速され、光透過率変化量が大きくなることが想定される。 この想定は、図 2において、比較例 3のコート無しの光学素子を窒素雰囲気中におい た場合には、光透過強度の減少が比較的小さ ヽこととも整合する。 As a result, it is assumed that when the optical element is irradiated with a blue laser, the deterioration of the substrate material is accelerated by a chemical reaction mediated by oxygen, and the amount of change in light transmittance is increased. In FIG. 2, this assumption is consistent with the fact that when the uncoated optical element of Comparative Example 3 is placed in a nitrogen atmosphere, the decrease in light transmission intensity is relatively small.
[0054] すなわち、酸素透過係数の低い多層膜を成膜することにより、光学素子の光透過 率変化量を抑えることができる。 That is, by forming a multilayer film having a low oxygen permeability coefficient, it is possible to suppress the amount of change in light transmittance of the optical element.
[0055] 図 7は、従来基板上に従来膜を成膜した光学素子と従来基板上に改善膜 1を成膜 した光学素子に青色レーザを照射し、停止した後の化学発光量の変化を示す図で ある。図 8は、図 7の一部の時間軸を拡大した図である。図 7および 8において、化学 発光量は相対的な大きさを示す。照射停止後 20秒までの間は、従来基板上に従来 膜を成膜した光学素子の化学発光量が、従来基板上に改善膜 1を成膜した光学素 子の化学発光量よりも大きい。化学発光は、酸素を媒介とする反応が原因であるとさ れている。従来基板上に改善膜 1を成膜した光学素子は、従来基板上に従来膜を成 膜した光学素子よりも酸素透過係数が小さぐ酸素を透過させにくいため、酸素を媒 介とする基板材料の化学反応を抑制していると考えられる。 [0055] Fig. 7 shows the change in the amount of chemiluminescence after the blue laser was irradiated to the optical element in which the conventional film was formed on the conventional substrate and the optical element in which the improvement film 1 was formed on the conventional substrate. In the figure shown is there. FIG. 8 is an enlarged view of a part of the time axis of FIG. In FIGS. 7 and 8, the amount of chemiluminescence shows the relative magnitude. For up to 20 seconds after the irradiation is stopped, the chemiluminescence amount of the optical element in which the conventional film is formed on the conventional substrate is larger than the chemiluminescence amount of the optical element in which the improvement film 1 is formed on the conventional substrate. Chemiluminescence is believed to be caused by oxygen-mediated reactions. The optical element with the improved film 1 formed on the conventional substrate has a smaller oxygen transmission coefficient than the optical element with the conventional film formed on the conventional substrate, and is less likely to transmit oxygen. It is thought that the chemical reaction is suppressed.
[0056] 図 9は、従来基板と窒素成形基板との、波長 280nm励起での波長 320nm前後の 蛍光発光量を示す図である。窒素成形基板とは、熱可塑性透明榭脂シクロォレフィ ンポリマーを窒素乾燥させ、窒素雰囲気中で輸送し、窒素雰囲気下で成形した基板 をいう。図 9において蛍光発光量は任意単位であり、相対的な大きさを示す。蛍光発 光は、酸素を媒介とすると考えられるので、窒素成形基板の蛍光発光量が小さい理 由は、従来基板と比較して酸素の吸収量が小さいためと考えられる。 [0056] FIG. 9 is a diagram showing the amount of fluorescence emission between a conventional substrate and a nitrogen-molded substrate at a wavelength of about 320 nm when excited at a wavelength of 280 nm. The nitrogen-molded substrate is a substrate obtained by drying a thermoplastic transparent olefin cycloolefin polymer in nitrogen, transporting it in a nitrogen atmosphere, and molding it in the nitrogen atmosphere. In FIG. 9, the amount of fluorescent light emission is an arbitrary unit and indicates a relative size. Since the fluorescence emission is considered to be oxygen-mediated, the reason why the amount of fluorescence emission of the nitrogen-molded substrate is small is considered to be because the amount of oxygen absorbed is smaller than that of the conventional substrate.
[0057] 図 10は、従来基板と窒素成形基板との光透過率変化量を示す図である。窒素成 形基板の光透過率変化量は、従来基板の光透過率変化量と比較して大幅に小さい 。このように、窒素成形基板は、従来基板と比較して青色レーザの照射による損傷を 受けにくい。 FIG. 10 is a diagram showing the amount of change in light transmittance between the conventional substrate and the nitrogen molded substrate. The amount of change in light transmittance of the nitrogen-shaped substrate is significantly smaller than the amount of change in light transmittance of the conventional substrate. Thus, the nitrogen molded substrate is less susceptible to damage from the blue laser irradiation than the conventional substrate.
[0058] 青色レーザの照射による損傷は、酸素を媒介とする化学反応により進行すると考え られる。したがって、窒素成形基板は、従来基板と比較して、酸素吸収量が小さいの で、青色レーザの照射による損傷を受けにくいと考えられる。 [0058] It is considered that damage caused by irradiation with a blue laser proceeds by an oxygen-mediated chemical reaction. Therefore, it is considered that a nitrogen-molded substrate is less susceptible to damage due to blue laser irradiation because it absorbs less oxygen than a conventional substrate.
[0059] 図 11は、従来基板上に改善膜 1を成膜した光学素子と窒素成形基板上に改善膜 1 を成膜した光学素子との光透過率変化量を示す図である。酸素吸収量の小さ!ヽ窒 素成形基板と酸素を透過させにくい改善膜 1とを組み合わせることにより、光透過率 変化量をきわめて小さく抑えることができる。 FIG. 11 is a diagram showing a change in light transmittance between an optical element in which the improvement film 1 is formed on a conventional substrate and an optical element in which the improvement film 1 is formed on a nitrogen-molded substrate. The amount of change in light transmittance can be kept very small by combining a low-oxygen absorption substrate with a nitrogen-molded substrate and an improved film 1 that hardly transmits oxygen.
Claims
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| CN108758549A (en) * | 2018-08-30 | 2018-11-06 | 华域视觉科技(上海)有限公司 | Vehicles laser lamp protective device |
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| JP2010248580A (en) * | 2009-04-16 | 2010-11-04 | Nidek Co Ltd | Method for manufacturing substrate with functional film |
| CN108717212B (en) * | 2018-04-04 | 2019-06-25 | 福建农林大学 | A kind of filter blue light anti-reflection film and preparation method thereof |
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|---|---|---|---|---|
| JP2000006181A (en) * | 1998-06-22 | 2000-01-11 | Teijin Ltd | METHOD FOR MOLDING HYDROGENATED alpha-OLEFIN- DICYCLOPENTADIENE COPOLYMER AND MOLDING OBTAINED THEREFROM |
| JP2002055207A (en) * | 2000-05-29 | 2002-02-20 | Konica Corp | Optical component and optical device |
-
2005
- 2005-02-28 JP JP2005054023A patent/JP2008032757A/en active Pending
-
2006
- 2006-02-13 WO PCT/JP2006/302437 patent/WO2006092949A1/en not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000006181A (en) * | 1998-06-22 | 2000-01-11 | Teijin Ltd | METHOD FOR MOLDING HYDROGENATED alpha-OLEFIN- DICYCLOPENTADIENE COPOLYMER AND MOLDING OBTAINED THEREFROM |
| JP2002055207A (en) * | 2000-05-29 | 2002-02-20 | Konica Corp | Optical component and optical device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103882378A (en) * | 2014-02-13 | 2014-06-25 | 同济大学 | Method for preparing antireflection film having high laser-induced damage threshold on yttrium calcium oxytriborate (YCOB) crystals |
| CN108758549A (en) * | 2018-08-30 | 2018-11-06 | 华域视觉科技(上海)有限公司 | Vehicles laser lamp protective device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008032757A (en) | 2008-02-14 |
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