WO2006060660A3 - Group iii nitride coatings and methods - Google Patents
Group iii nitride coatings and methods Download PDFInfo
- Publication number
- WO2006060660A3 WO2006060660A3 PCT/US2005/043637 US2005043637W WO2006060660A3 WO 2006060660 A3 WO2006060660 A3 WO 2006060660A3 US 2005043637 W US2005043637 W US 2005043637W WO 2006060660 A3 WO2006060660 A3 WO 2006060660A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group iii
- iii nitride
- silicon
- nitride
- thin films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Paints Or Removers (AREA)
Abstract
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2005800414858A CN101068890B (en) | 2004-12-01 | 2005-12-01 | Group III nitride coatings and methods |
| US11/809,879 US7772288B2 (en) | 2004-12-01 | 2007-06-01 | Group III nitride coatings and methods |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63199904P | 2004-12-01 | 2004-12-01 | |
| US60/631,999 | 2004-12-01 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/809,879 Continuation US7772288B2 (en) | 2004-12-01 | 2007-06-01 | Group III nitride coatings and methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2006060660A2 WO2006060660A2 (en) | 2006-06-08 |
| WO2006060660A3 true WO2006060660A3 (en) | 2006-11-16 |
Family
ID=36565775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2005/043637 Ceased WO2006060660A2 (en) | 2004-12-01 | 2005-12-01 | Group iii nitride coatings and methods |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN101068890B (en) |
| WO (1) | WO2006060660A2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101053115B1 (en) * | 2011-02-28 | 2011-08-01 | 박건 | Nitride-based light emitting device excellent in crystallinity and brightness and manufacturing method thereof |
| KR101053111B1 (en) * | 2011-02-28 | 2011-08-01 | 박건 | Nitride-based light emitting device using a silicon substrate and a method of manufacturing the same |
| CN102746025B (en) * | 2012-06-27 | 2014-03-26 | 电子科技大学 | Preparation method of low-cost GaN epitaxial film |
| CN103343005B (en) * | 2013-07-13 | 2015-05-13 | 上海洞舟实业有限公司 | High-stability carbon nanometer fluorescence dye |
| US20180072570A1 (en) * | 2015-03-30 | 2018-03-15 | Tosoh Corporation | Gallium nitride-based sintered compact and method for manufacturing same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4904411A (en) * | 1986-04-25 | 1990-02-27 | Ceramics Process Systems Corp. | Highly loaded, pourable suspensions of particulate materials |
| US6653718B2 (en) * | 2001-01-11 | 2003-11-25 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
| US20040023010A1 (en) * | 2002-03-29 | 2004-02-05 | Vladimir Bulovic | Light emitting device including semiconductor nanocrystals |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1279585C (en) * | 2001-11-17 | 2006-10-11 | 厦门三安电子有限公司 | Method for producing P-type III nitride material |
-
2005
- 2005-12-01 WO PCT/US2005/043637 patent/WO2006060660A2/en not_active Ceased
- 2005-12-01 CN CN2005800414858A patent/CN101068890B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4904411A (en) * | 1986-04-25 | 1990-02-27 | Ceramics Process Systems Corp. | Highly loaded, pourable suspensions of particulate materials |
| US6653718B2 (en) * | 2001-01-11 | 2003-11-25 | Honeywell International, Inc. | Dielectric films for narrow gap-fill applications |
| US20040023010A1 (en) * | 2002-03-29 | 2004-02-05 | Vladimir Bulovic | Light emitting device including semiconductor nanocrystals |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101068890A (en) | 2007-11-07 |
| WO2006060660A2 (en) | 2006-06-08 |
| CN101068890B (en) | 2011-01-19 |
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