[go: up one dir, main page]

WO2006060660A3 - Group iii nitride coatings and methods - Google Patents

Group iii nitride coatings and methods Download PDF

Info

Publication number
WO2006060660A3
WO2006060660A3 PCT/US2005/043637 US2005043637W WO2006060660A3 WO 2006060660 A3 WO2006060660 A3 WO 2006060660A3 US 2005043637 W US2005043637 W US 2005043637W WO 2006060660 A3 WO2006060660 A3 WO 2006060660A3
Authority
WO
WIPO (PCT)
Prior art keywords
group iii
iii nitride
silicon
nitride
thin films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/043637
Other languages
French (fr)
Other versions
WO2006060660A2 (en
Inventor
Huaqiang Wu
Michael G Spencer
Emmanuel Giannelis
Athanasios Bourlinos
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cornell Research Foundation Inc
Original Assignee
Cornell Research Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cornell Research Foundation Inc filed Critical Cornell Research Foundation Inc
Priority to CN2005800414858A priority Critical patent/CN101068890B/en
Publication of WO2006060660A2 publication Critical patent/WO2006060660A2/en
Publication of WO2006060660A3 publication Critical patent/WO2006060660A3/en
Priority to US11/809,879 priority patent/US7772288B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Paints Or Removers (AREA)

Abstract

The invention provides a composition that is a dispersion made from a Group III nitride, a solvent system, and a dispersant. The dispersion can be used to prepare Group III nitride thin films on a wide range of substrates, for example, glass, silicon, silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, sapphire, and organic polymers. The particle size of the Group III nitride used for producing the thin films can be controlled by adjusting the centrifugation of the dispersion and selecting a desired layer of supernatant. The Group HI nitride can contain a dopant. The dispersant can be removed from the thin films by calcination. (Fig. 3) represents an X- ray diffraction pattern of GaN film on silicon substrate.
PCT/US2005/043637 2004-12-01 2005-12-01 Group iii nitride coatings and methods Ceased WO2006060660A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2005800414858A CN101068890B (en) 2004-12-01 2005-12-01 Group III nitride coatings and methods
US11/809,879 US7772288B2 (en) 2004-12-01 2007-06-01 Group III nitride coatings and methods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63199904P 2004-12-01 2004-12-01
US60/631,999 2004-12-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/809,879 Continuation US7772288B2 (en) 2004-12-01 2007-06-01 Group III nitride coatings and methods

Publications (2)

Publication Number Publication Date
WO2006060660A2 WO2006060660A2 (en) 2006-06-08
WO2006060660A3 true WO2006060660A3 (en) 2006-11-16

Family

ID=36565775

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/043637 Ceased WO2006060660A2 (en) 2004-12-01 2005-12-01 Group iii nitride coatings and methods

Country Status (2)

Country Link
CN (1) CN101068890B (en)
WO (1) WO2006060660A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101053115B1 (en) * 2011-02-28 2011-08-01 박건 Nitride-based light emitting device excellent in crystallinity and brightness and manufacturing method thereof
KR101053111B1 (en) * 2011-02-28 2011-08-01 박건 Nitride-based light emitting device using a silicon substrate and a method of manufacturing the same
CN102746025B (en) * 2012-06-27 2014-03-26 电子科技大学 Preparation method of low-cost GaN epitaxial film
CN103343005B (en) * 2013-07-13 2015-05-13 上海洞舟实业有限公司 High-stability carbon nanometer fluorescence dye
US20180072570A1 (en) * 2015-03-30 2018-03-15 Tosoh Corporation Gallium nitride-based sintered compact and method for manufacturing same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904411A (en) * 1986-04-25 1990-02-27 Ceramics Process Systems Corp. Highly loaded, pourable suspensions of particulate materials
US6653718B2 (en) * 2001-01-11 2003-11-25 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
US20040023010A1 (en) * 2002-03-29 2004-02-05 Vladimir Bulovic Light emitting device including semiconductor nanocrystals

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1279585C (en) * 2001-11-17 2006-10-11 厦门三安电子有限公司 Method for producing P-type III nitride material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904411A (en) * 1986-04-25 1990-02-27 Ceramics Process Systems Corp. Highly loaded, pourable suspensions of particulate materials
US6653718B2 (en) * 2001-01-11 2003-11-25 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
US20040023010A1 (en) * 2002-03-29 2004-02-05 Vladimir Bulovic Light emitting device including semiconductor nanocrystals

Also Published As

Publication number Publication date
CN101068890A (en) 2007-11-07
WO2006060660A2 (en) 2006-06-08
CN101068890B (en) 2011-01-19

Similar Documents

Publication Publication Date Title
TW200737400A (en) Etch resistant wafer processing apparatus and method for producing the same
WO2004075249A3 (en) Buffer structure for modifying a silicon substrate
WO2008060349A3 (en) Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
CN111826618B (en) Gallium nitride sintered body and method for producing same
WO2000013222A8 (en) Silane-based nanoporous silica thin films
WO2005045899A3 (en) Low temperature deposition of silicone nitride
WO2006060466A3 (en) Near single-crystalline, high-carrier-mobility silicon thin film on a polycrystalline/amorphous substrate
WO2000079570A3 (en) Silicon carbide epitaxial layers grown on substrates offcut towards <1100>
US7547359B2 (en) Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride
WO2003046265A3 (en) Thick porous anodic alumina films and nanowire arrays grown on a solid substrate
CN103608897A (en) Semiconductor thin film structure and method for forming same
WO2002001608A3 (en) METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
CN104733286A (en) Controlled spalling of group iii nitrides containing an embedded spall releasing plane
Li et al. Effects of growth temperature on electrical and structural properties of sputtered GaN films with a cermet target
WO2006060660A3 (en) Group iii nitride coatings and methods
Fong et al. Synthesis of wurtzite GaN thin film via spin coating method
Park et al. A novel process for the generation of pristine sapphire surfaces
Lattemann et al. New approach in depositing thick, layered cubic boron nitride coatings by oxygen addition—structural and compositional analysis
Hong et al. Growth of GaN films with controlled out-of-plane texture on Si wafers
KR102346421B1 (en) Film for applying compressive stress to ceramic materials
Bae et al. Photoluminescence behaviors in ZnGa2O4 thin film phosphors deposited by a pulsed laser ablation
WO2006113806A3 (en) Isolation layer for semiconductor devices and method for forming the same
Fong et al. Effects of nitridation durations on the synthesis of wurtzite GaN thin films by spin coating method
KR20210081138A (en) Method of manufacturing aluminum nitride thin film using pulse laser method
Qin et al. Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-temperature ECR-PEMOCVD

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 11809879

Country of ref document: US

Ref document number: 200580041485.8

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 05852767

Country of ref document: EP

Kind code of ref document: A2