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WO2005119367A1 - Composition hydrofuge, film fin hydrofuge et film fin avec des caractéristiques hydrofuges/hydrophiles - Google Patents

Composition hydrofuge, film fin hydrofuge et film fin avec des caractéristiques hydrofuges/hydrophiles Download PDF

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Publication number
WO2005119367A1
WO2005119367A1 PCT/JP2005/009479 JP2005009479W WO2005119367A1 WO 2005119367 A1 WO2005119367 A1 WO 2005119367A1 JP 2005009479 W JP2005009479 W JP 2005009479W WO 2005119367 A1 WO2005119367 A1 WO 2005119367A1
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WO
WIPO (PCT)
Prior art keywords
water
repellent
group
thin film
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2005/009479
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English (en)
Japanese (ja)
Inventor
Yutaka Furukawa
Takashi Okazoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of WO2005119367A1 publication Critical patent/WO2005119367A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface

Definitions

  • Water repellent composition Water repellent composition, water repellent thin film and thin film having water repellent hydrophilic pattern
  • the present invention relates to a water-repellent composition, a water-repellent thin film formed from the composition, and a thin film having a water-repellent hydrophilic pattern formed from the thin film.
  • a method for manufacturing a fine device such as a semiconductor element, an integrated circuit, and a device for an organic EL display
  • a thin film of a functional material is formed on a substrate by vacuum deposition, sputtering, or the like, and the thin film is subjected to photolithography.
  • Photolithography generally has the following process powers (1) to (3).
  • a thin film of a material to be patterned is formed on a substrate.
  • a photoresist film is formed on the thin film, exposed through a photomask having a predetermined pattern, and developed with an alkali developer to form a photoresist pattern.
  • Etching is performed using the photoresist pattern as a mask, and unnecessary portions are removed to obtain a thin film having a desired pattern shape. Since photolithography is a complicated process and must be performed in a clean room, there has been a problem that equipment with low utilization efficiency of energy and materials becomes expensive.
  • a method has been proposed in which a pattern having different surface characteristics is formed on a substrate, and a fine device is manufactured using the difference in surface characteristics.
  • a patterning method using ultraviolet light is preferable in terms of manufacturing because a large-area substrate can be processed at a time using a photomask.
  • a high energy energy line having a wavelength of less than 200 nm is mainly used as ultraviolet light, for example, in the case of a silicon wafer substrate provided with an oxide silicon film, it is decomposed to the Si—O bond of the substrate. There was a problem (see Patent Document 1 and Patent Document 2).
  • Patent Document 1 Japanese Patent Application Laid-Open No. 11-344804
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2000-282240
  • An object of the present invention is to eliminate the above-mentioned disadvantages of the prior art, and can form a water-repellent hydrophilic pattern Jung on a substrate by irradiating light having a wavelength of 200 ⁇ m or more. To provide things.
  • the present invention has the following gist.
  • a water-repellent composition comprising a compound B which decomposes by irradiation with light having a wavelength of 200 nm or more to generate an acid, and a water-repellent compound A which decomposes by the acid generated from the compound to reduce water repellency.
  • R i2 , R i3 , R M each independently represents a monovalent fluorinated organic group.
  • R 3 and R 7 each independently represent a divalent organic group.
  • R 2 , R 4 , R 5 , R 6 , R 8 each independently represents a monovalent organic group.
  • X 1 , X 2 , X 3 , X 4 each independently a hydrolyzable group.
  • n, m, p, q each independently, an integer of 1 to 3.
  • R n, R i2, R i3 , R M are each independently a pel full O b alkyl group having pel full O b alkyl group or E one ether oxygen atom, the (4 ) Aqueous composition.
  • the X 1 , X 2 , X 3 , and X 4 forces are each independently at least one hydrolyzable group selected from the group consisting of a halogen atom, an alkoxy group, an acetyloxy group, and a ketoxime group.
  • the water repellent composition according to any one of the above (4) to (6).
  • the contact angle with water of the water-repellent thin film before irradiation with light having a wavelength of 200 nm or more is 95 degrees or more, and the contact angle with water of the thin film after irradiation with light having a wavelength of 200 nm or more is 70 degrees or less.
  • the water repellent composition of the present invention can form a thin film having excellent water repellency on a substrate.
  • the thin film is irradiated with light having a wavelength of 200 nm or more, which is relatively low energy, the water repellency of the thin film surface is reduced.
  • a thin film having a water-repellent hydrophilic pattern can be easily formed on a substrate.
  • the water-repellent composition of the present invention it is possible to form a thin film having a water-repellent hydrophilic pattern in a small number of steps using an inexpensive apparatus as compared with a photolithography method.
  • the water repellent compound A in the present invention is decomposed by an acid to reduce water repellency.
  • a compound having a fluorinated organic group and having a bonding group that is decomposed by an acid to release the fluorinated organic group is preferable.
  • the bonding group an ester group, a silyl ether group, a silylamino group and the like are preferable.
  • the water repellent compound A is preferably at least one compound selected from the group consisting of fluorine-containing compounds represented by the following formulas 1 to 4 and Z or a partial hydrolyzate, .
  • R i2 , R i3 , R M each independently represents a monovalent fluorinated organic group.
  • R 3 and R 7 each independently represent a divalent organic group.
  • R 2 , R 4 , R 5 , R 6 , R 8 each independently represents a monovalent organic group.
  • X 1 , X 2 , X 3 , X 4 each independently a hydrolyzable group.
  • n, m, p, q each independently, an integer of 1 to 3.
  • R n is a perfluoroalkyl group or an etheric compound.
  • Perfluoroalkyl groups having an oxygen atom are preferred!
  • the number of carbon atoms in the perfluoroalkyl group is preferably 1 to 16, more preferably 3 to 12 force S, and most preferably 3 to 8 carbon atoms.
  • Examples of the perfluoroalkyl group include a linear structure, a branched structure and a cyclic structure, and a linear structure is preferable. In the case of a branched structure, it is preferable that the branched portion exists at the terminal and the branched portion is a short chain having about 1 to 4 carbon atoms.
  • R 1 an alkylene group having 1 to 10 carbon atoms is preferable, and an alkylene group having 2 to 5 carbon atoms is more preferable, and an alkylene group having 3 to 4 carbon atoms is more preferable.
  • R 2 is preferably an alkyl group having 1 to 5 carbon atoms, more preferably an alkyl group having 1 to 3 carbon atoms, and most preferably a methyl group.
  • X 1 is preferably a halogen atom, an alkoxy group, an acetoxyl group, or a ketoxime group, more preferably a halogen atom or an alkoxy group.
  • n is preferably 2 to 3, and more preferably 3. If n is 3
  • the water-repellent composition has excellent adhesion to a substrate.
  • Examples of the compound 1 include the following compounds.
  • F (CF) COO (CH) Si (OCH) is preferable.
  • R i2, R i3, R M is the R n and signaling R 3 preferred the same groups
  • R 7 is the R 1 group similar to the preferred tool
  • R 5 , R 6 , and R 8 are preferably the same groups as R 2
  • X 4 are preferably the same groups as X 1 m
  • p, and q are the same The same integer as n is preferable.
  • Examples of the compound 2 include the following compounds.
  • F CF 2 CH 2 CH 2 OCO 2 (CH 2) 2 Si (OCH 2) is preferable.
  • Examples of the compound 3 include the following compounds.
  • the compound 4 is preferably F (CF 2) 2 CH 2 (CH 2) 2 SiO (CH 2) 2 Si (OCH 3).
  • Compound B which decomposes upon irradiation with light to generate an acid, has a maximum absorption wavelength ( ⁇ ) of 2 max.
  • a thin film having a water-repellent hydrophilic pattern can be formed using a simple device such as a high-pressure mercury lamp.
  • any compound that can be decomposed by light having a wavelength of 200 nm or more to generate an acid that is, a photoacid generator (abbreviated as PAG) can be used without particular limitation.
  • PAG photoacid generator
  • Specific examples of the compound B include the following compounds.
  • the generated acid is preferably hydrochloric acid as long as it is an acid capable of decomposing the water-repellent compound A.
  • hydrochloric acid is an acid capable of decomposing the water-repellent compound A.
  • the mass ratio of the water repellent compound AZ compound B in the water repellent composition is preferably from 95Z5 to 99.99 / 0.01 force S, more preferably from 99/1 to 99.9 / 0.1 force S. , 99.5 / 0.5 to 99.8 / 0.2 are most preferred. Within this range, the water repellency of the surface of the water-repellent thin film is reduced by light irradiation. Decreases efficiently.
  • the water-repellent thin film of the present invention is formed by applying a water-repellent composition on a substrate.
  • the contact angle of the water-repellent thin film with water is preferably 95 degrees or more, more preferably 100 degrees or more.
  • the thin film preferably has a contact angle with water of 70 ° or less, more preferably 50 ° or less, most preferably 30 ° or less.
  • the difference in contact angle of the thin film with water before and after light irradiation is preferably 30 degrees or more, more preferably 50 degrees or more, and most preferably 70 degrees or more.
  • the water-repellent composition of the present invention preferably contains an organic solvent.
  • the organic solvent is not particularly restricted but includes alcohols, ketones, aromatic hydrocarbons, lower alcohols such as ethyl alcohol and 2-propyl alcohol, which are preferred among paraffin hydrocarbons, and paraffin hydrocarbons. More preferred.
  • One organic solvent may be used, or two or more organic solvents may be used in combination to adjust solubility and evaporation rate.
  • the mass ratio of the water repellent compound AZ organic solvent is preferably 1Z1000 to 1Z10, more preferably 1Z200 to 1Z20. Within this range, a uniform thin film is formed and the water repellency is excellent.
  • the thickness of the water-repellent thin film of the present invention is not particularly limited, but is preferably from 0.5 to: LOOnm is more preferable 1 to 20 nm is more preferable l to 5 nm is most preferable.
  • the thickness of the water-repellent thin film is most preferably the thickness of a self-assembled film (also referred to as SMA). Within this range, a good water-repellent hydrophilic pattern can be obtained.
  • Examples of methods for applying the water-repellent composition include various known methods such as brush coating, flow coating, spin coating, dip coating, squeegee coating, spray coating, and hand coating.
  • the water repellent composition is applied to the surface, it is dried in the air, in a nitrogen stream, or the like.
  • the heating temperature and time are set in consideration of the heat resistance of the substrate.
  • the temperature is preferably from 0 to 80 ° C, more preferably from 10 to 40 ° C.
  • the time is preferably from 1 to 60 minutes, more preferably from 5 to 30 minutes.
  • the thin film having a water-repellent hydrophilic pattern of the present invention is formed by irradiating the water-repellent thin film with light and cleaning the thin film surface.
  • the wavelength of the light to be irradiated is preferably 200 to 800 mn force S, more preferably 250 to 600 mn force S, ⁇ 400nm is most preferred!
  • Irradiation light is more preferably ultraviolet light.
  • Light sources include low-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, xenon lamps, sodium lamps, gas lasers such as nitrogen, liquid lasers of organic dye solutions, and solid-state lasers containing rare earth ions in inorganic single crystals. And the like.
  • a light source other than a laser capable of obtaining monochromatic light light of a specific wavelength obtained by extracting a broadband line spectrum or continuous spectrum using an optical filter such as a band-pass filter or a cutoff filter may be used. Good. Since a large area can be irradiated at a time, a high-pressure mercury lamp or an ultra-high-pressure mercury lamp is preferred as a light source.
  • Examples of the irradiation method include a method of irradiating light through a photomask having a predetermined pattern, a method of using laser light, and the like. Because it can irradiate a large area at once
  • a method of irradiating light through a photomask is preferable.
  • a solvent that dissolves a fluorine-containing organic group examples include dichloropentafluoropropane (hereinafter referred to as R-225), perfluorocarbons such as perfluorohexane, hydrfluoroethers such as (perfluorobutoxy) methane, decafluoroether, and decahydrate.
  • R-225 dichloropentafluoropropane
  • perfluorocarbons such as perfluorohexane
  • hydrfluoroethers such as (perfluorobutoxy) methane
  • decafluoroether decahydrate
  • Fluorocapanone such as fluoropentane.
  • the portion irradiated with light has reduced water repellency, and the energized portion not irradiated with light maintains water repellency. Is formed.
  • a thin film having a hydrophilic and water-repellent pattern can be easily obtained by forming a thin film by applying a water-repellent composition and subsequently irradiating the light once.
  • the mechanism by which water repellency of the water repellent thin film is reduced by light irradiation is considered as follows.
  • the bonding group in the thin film formed from the fluorine-containing compound A is decomposed by an acid to release a fluorine-containing organic group and form a hydroxyl group, a carboxyl group, a silanol group, an amino group, and the like, so that the water repellency is reduced. It is thought to be.
  • the substrate used in the present invention is not particularly limited, and preferably includes glass, quartz glass, silicon wafer, plastic, metal and the like. In addition, a metal thin film is formed on these substrates. May be used.
  • AK-225 (trade name, manufactured by Asahi Glass Co., Ltd.) was used as R-225.
  • As the glass substrate a glass substrate was used in which the surface of a 10 cm square, 2 mm thick soda lime glass substrate was polished and cleaned with an abrasive containing cerium oxide fine particles, rinsed with pure water, and air-dried.
  • the contact angle with water was calculated as the average value of the measured contact angles at three points with three drops of water placed on the substrate using the static drop method.
  • the contact angle of the obtained sample 11 with water was 105 degrees, and the contact angle of the untreated glass substrate with water was 10 degrees or less.
  • Sample 12 was prepared by irradiating ultraviolet rays using a high-pressure mercury lamp, washing with R-225, and air-drying. When the irradiation amount was 200 miZcm 2, the contact angle to water of Sample 1-2 was 61 degrees.
  • the contact angle of the obtained Sample 2-1 with water was 104 degrees.
  • the sample was irradiated with ultraviolet rays using a high-pressure mercury lamp, washed with R-225, and air-dried to prepare Sample 2-2.
  • the irradiation power was 200 mJZcm 2
  • the contact angle with water was 42 degrees.
  • the contact angle of the obtained Sample 3-1 with water was 106 degrees.
  • the sample was irradiated with ultraviolet rays using a high-pressure mercury lamp, washed with R-225, and air-dried to prepare Sample 3-2.
  • the contact angle with water when the irradiation power was 200 mJZcm 2 was 22 degrees.
  • hydrolysis reaction was carried out at room temperature for 12 hours to obtain a hydrolyzate 4.
  • the obtained hydrolyzate 4 has 5 moles relative to the raw material F (CF) CHCH (CH) SiO (CH) Si (OCH).
  • the contact angle of the obtained sample 4-1 with water was 105 degrees.
  • High pressure mercury lamp The sample was irradiated with ultraviolet rays, washed with R-225, and air-dried to prepare Sample 4-2.
  • the irradiation power was S750 mjZcm 2
  • the contact angle with water was 60 degrees.
  • the thin film having a water-repellent hydrophilic pattern of the present invention can be used for forming a functional pattern. For example, by spraying a functional material onto the hydrophilic region of the thin film by inkjet printing, a clear pattern of the functional material can be easily formed.
  • a thin film having a water-repellent hydrophilic pattern has a use as a stamp for microcontact printing by including a functional ink in a hydrophilic region and transferring it to another substrate.

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Surface Treatment Of Glass (AREA)
  • Paints Or Removers (AREA)
  • Materials Applied To Surfaces To Minimize Adherence Of Mist Or Water (AREA)

Abstract

Une composition hydrofuge à partir de laquelle il est facile de former une pellicule fine ayant des caractéristiques hydrofuge/hydrophile à l'aide d'une lumière de niveau énergétique relativement bas. La composition hydrofuge comprend un composé hydrofuge (A) qui décompose, par action d'un acide anticipé ayant des caractéristiques hydrofuges réduites (par ex., Rf2OCOR3Si(R4)3-mX2m, où Rf2 est un polyfluoroalkyl monovalent, R3 est un alkylène, R4 est méthyl, X est un groupe hydrolysable et m est un entier entre 1 et 3) et un composé (B) qui se décompose sous irradiation avec une lumière dont la longueur d'onde est 200 nm ou plus, pour produire un acide. Une pellicule fine formée à partir de la composition est irradiée avec une lumière pour former une pellicule fine avec des caractéristiques hydrofuges/hydrophiles.
PCT/JP2005/009479 2004-06-04 2005-05-24 Composition hydrofuge, film fin hydrofuge et film fin avec des caractéristiques hydrofuges/hydrophiles Ceased WO2005119367A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-167292 2004-06-04
JP2004167292A JP2005345897A (ja) 2004-06-04 2004-06-04 撥水性組成物、撥水性薄膜および撥水性親水性パターンを有する薄膜

Publications (1)

Publication Number Publication Date
WO2005119367A1 true WO2005119367A1 (fr) 2005-12-15

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WO (1) WO2005119367A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227715A (ja) * 2006-02-24 2007-09-06 Stanley Electric Co Ltd パターニング基板の製造方法
EP1992990A4 (fr) * 2006-03-06 2011-03-30 Asahi Glass Co Ltd Substratum traite pourvu d'une zone hydrophile et d'une zone hydrophobe et son procede de production
CN111699546A (zh) * 2018-02-13 2020-09-22 中央硝子株式会社 拒水性保护膜形成剂、拒水性保护膜形成用化学溶液和晶片的表面处理方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6096531B2 (ja) * 2013-02-25 2017-03-15 キヤノンファインテック株式会社 含フッ素アルコキシシラン化合物、コーティング剤、及び撥水膜
CN106462069B (zh) * 2014-04-25 2019-10-18 Ａｇｃ株式会社 负型感光性树脂组合物、分隔壁及光学元件

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JPH08320562A (ja) * 1995-05-24 1996-12-03 Oki Electric Ind Co Ltd 放射線感応性樹脂組成物およびそれを用いたレジストパターンの形成方法
JPH10114888A (ja) * 1996-10-11 1998-05-06 Hitachi Ltd 光制御可能な超撥水表面を有する物品、並びにそれを用いた印刷機
JPH10301265A (ja) * 1997-04-25 1998-11-13 Hitachi Ltd レジスト組成物、パタン形成方法及び半導体装置の製造方法
JP2000298345A (ja) * 1999-04-14 2000-10-24 Toray Ind Inc ポジ型感放射線性組成物
JP2003195502A (ja) * 2001-12-26 2003-07-09 Hitachi Ltd 感放射線組成物及びパタン形成方法及び半導体装置の製造方法
JP2003241386A (ja) * 2001-12-13 2003-08-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08320562A (ja) * 1995-05-24 1996-12-03 Oki Electric Ind Co Ltd 放射線感応性樹脂組成物およびそれを用いたレジストパターンの形成方法
JPH10114888A (ja) * 1996-10-11 1998-05-06 Hitachi Ltd 光制御可能な超撥水表面を有する物品、並びにそれを用いた印刷機
JPH10301265A (ja) * 1997-04-25 1998-11-13 Hitachi Ltd レジスト組成物、パタン形成方法及び半導体装置の製造方法
JP2000298345A (ja) * 1999-04-14 2000-10-24 Toray Ind Inc ポジ型感放射線性組成物
JP2003241386A (ja) * 2001-12-13 2003-08-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2003195502A (ja) * 2001-12-26 2003-07-09 Hitachi Ltd 感放射線組成物及びパタン形成方法及び半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227715A (ja) * 2006-02-24 2007-09-06 Stanley Electric Co Ltd パターニング基板の製造方法
EP1992990A4 (fr) * 2006-03-06 2011-03-30 Asahi Glass Co Ltd Substratum traite pourvu d'une zone hydrophile et d'une zone hydrophobe et son procede de production
EP2375286A3 (fr) * 2006-03-06 2012-04-04 Asahi Glass Company, Limited Substrat traité avec une région hydrophile et région hydrofuge et son procédé de production
CN111699546A (zh) * 2018-02-13 2020-09-22 中央硝子株式会社 拒水性保护膜形成剂、拒水性保护膜形成用化学溶液和晶片的表面处理方法
CN111699546B (zh) * 2018-02-13 2023-09-12 中央硝子株式会社 拒水性保护膜形成剂和拒水性保护膜形成用化学溶液

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