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WO2004038777A1 - Dispositif de traitement thermique - Google Patents

Dispositif de traitement thermique Download PDF

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Publication number
WO2004038777A1
WO2004038777A1 PCT/JP2003/013640 JP0313640W WO2004038777A1 WO 2004038777 A1 WO2004038777 A1 WO 2004038777A1 JP 0313640 W JP0313640 W JP 0313640W WO 2004038777 A1 WO2004038777 A1 WO 2004038777A1
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WO
WIPO (PCT)
Prior art keywords
mounting table
heat treatment
treatment apparatus
processing container
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2003/013640
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English (en)
Japanese (ja)
Inventor
Tatsuya Handa
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Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2004038777A1 publication Critical patent/WO2004038777A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P72/7608—
    • H10P72/0436—
    • H10P72/7612—

Definitions

  • the present invention relates to a heat treatment apparatus for performing a heat treatment on a plate-like workpiece such as a semiconductor wafer on a mounting table in a processing vessel.
  • a desired integrated circuit is formed by repeatedly performing various processes such as a film forming process and a etching process on a plate-shaped object such as a semiconductor wafer.
  • a processing gas necessary for the type of processing for example, in the case of film forming processing, a film forming gas or the like is introduced into the processing container.
  • Japanese Patent Application Laid-Open No. 2002-135456 describes a heat treatment apparatus for subjecting a semiconductor wafer to heat treatment using a processing gas for each semiconductor wafer.
  • a thin mounting table is installed in a processing container which can be evacuated, and a semiconductor wafer is mounted on an upper surface of the mounting table. Then, a processing gas is flowed into the processing vessel while being heated by a heating lamp from below the mounting table, and various heating processes are performed on the wafer.
  • the mounting table is provided with a push-up pin which can be moved up and down in the vertical direction in order to transfer the wafer carried into the processing container onto the mounting table.
  • a push-up pin which can be moved up and down in the vertical direction in order to transfer the wafer carried into the processing container onto the mounting table.
  • FIG. 21 is a configuration diagram showing a general heat treatment apparatus
  • FIG. 22 is a plan view mainly showing a mounting table.
  • a mounting table 4 on which a semiconductor wafer W is mounted is provided in a processing container 2 which can be evacuated.
  • On the opposite side of the mounting table 4 Is provided with a shower head 6 for supplying a processing gas.
  • a heating lamp 8 is provided below the mounting table 4 and on the bottom side of the processing container 2.
  • the wafer W is indirectly heated by heating the mounting table 4 via the transmission window 10 by the heating lamp 8.
  • the mounting table 4 is made of, for example, aluminum nitride (A1N), and its back surface is made substantially black, so that the irradiation light from the heating lamp 8 can be efficiently absorbed.
  • A1N aluminum nitride
  • a plurality of, for example, three lift pins 12 (only two are shown in the illustrated example) which can be moved up and down integrally by an actuator (not shown).
  • the tips of the lift pins 12 pass through pin holes 14 provided in the mounting table 4 so that the wafer W can be lifted or lowered.
  • a rod member 16 is provided integrally with the lift pins 12 so as to be positioned outside the mounting table 4.
  • the rod member 16 can be vertically protruded and retracted by an elastic member such as a panel housed in a quartz elastic member housing cylinder 18.
  • an elastic member such as a panel housed in a quartz elastic member housing cylinder 18.
  • a ring-shaped clamp member 20 made of ceramic with low metal contamination such as aluminum nitride and low thermal expansion is attached.
  • the inner peripheral edge portion of the clamp member 20 abuts on the upper surface of the peripheral edge portion of the wafer W to press and fix the wafer W to the mounting table 4 side.
  • a cylindrical reflecting member 22 is provided on the lower side of the mounting table 4 so as to rise from the bottom of the processing container 2.
  • the reflection member 22 has an inner surface formed as a reflection surface such that the irradiation light from the heating lamp 8 diverging laterally is reflected toward the back surface of the mounting table 4.
  • a cutout portion 24 for allowing the rod member 16 and the lifter pin 12 to move up and down is partially formed at the upper end of the reflection member 22.
  • a cylindrical support 26 is provided outside the reflection member 22.
  • an attachment member 30 (see FIG. 22) also formed in a ring shape via an auxiliary ring 28 is provided.
  • a plurality of, in the illustrated example, four support projections 3OA projecting toward the center are provided on the inner peripheral surface of the attachment member 30. These support projections 3OA are configured to contact the back surface of the peripheral portion of the mounting table 4 to support the same.
  • this The chimney member 30 has a through hole 32 through which the mouth portion 4 and the resilient member housing cylinder 18 pass.
  • a temperature measurement hole (not shown) is provided on the outer peripheral surface of the mounting table 4 toward the inside of the mounting table 4.
  • a temperature detector such as a thermocouple or an optical fiber rod, is inserted into the temperature measurement hole to detect the temperature at the center or the periphery of the mounting table 4.
  • a pin hole 14 for passing the lift pin 12 is formed substantially inside the peripheral portion of the mounting table 4. For this reason, there is a problem that the temperature distribution is adversely affected in a portion corresponding to the pin hole 14. That is, as described above, the mounting table 4 is configured such that the back surface is made substantially black or the like so that the irradiation light from the heating lamp 8 can be efficiently absorbed.
  • the portion of the pin hole 14 having a diameter of about 1 Omm the irradiation light passes and directly strikes the back surface of the wafer W. Since the infrared transmittance of the wafer W is relatively large, the infrared component of the directly irradiated light is transmitted. This causes a bad influence on the heating temperature distribution of the wafer W.
  • the resilient member housing cylinder 18 that supports the clamp member 20 has a structure that directly receives irradiation light from the heating lamp 8. For this reason, on the back surface side of the attachment member 30 or the like, there is a portion that becomes a shadow of the housing cylinder 18 and is not directly irradiated with the irradiation light. This also has a negative effect on the heating temperature distribution of the mounting table 4.
  • the mounting table 4 is partially in contact with the support protrusion 3 OA formed on the attachment member 30 made of, for example, quartz, and in the vertical direction only at the support protrusion 3 OA. Overlap. This also causes the balance of the temperature distribution to be lost, and adversely affects the heating temperature distribution of the mounting table 4.
  • thermocouple when a processing gas such as a film forming gas enters the temperature measurement hole of the mounting table 4, the following problem occurs depending on the type of gas.
  • a processing gas such as a film forming gas enters the temperature measurement hole of the mounting table 4
  • the following problem occurs depending on the type of gas.
  • a thermocouple when a thermocouple is used as a temperature detector, corrosive film-forming gas reacts with the thermocouple and the material inside the mounting table. Sometimes. As a result, the thermocouple cannot be pulled out of the measurement hole or the temperature measurement becomes unstable.
  • the present invention has been devised in view of the above problems and effectively solving them.
  • An object of the present invention is to provide a heat treatment apparatus capable of improving the surface uniformity of heat treatment for an object to be processed on a mounting table.
  • the present invention provides, as a first heat treatment apparatus, a heat treatment apparatus for heat-treating a plate-shaped object to be treated, wherein the treatment vessel is provided in the treatment vessel; A plate-like mounting table on which a plurality of pin communication portions are formed, and a plurality of lifting / lowering through the pin communication portions while supporting the processing object, for mounting the processing object on the mounting table.
  • a heat treatment apparatus is provided at a position supporting an outer edge portion.
  • the present invention provides, as a second heat treatment apparatus, a heat treatment apparatus for heat-treating a plate-shaped object to be processed, comprising: a processing container; and an object provided in the processing container.
  • the distribution of the heating temperature of the mounting table is different. It is possible to significantly suppress the adverse effects on the characteristics. As a result, it is possible to improve the in-plane uniformity of the heat treatment for the object to be processed on the mounting table.
  • the present invention provides, as a third heat treatment apparatus, a heat treatment apparatus for heat-treating a plate-shaped object to be processed, comprising: a processing container; and an object provided in the processing container.
  • a heating lamp for indirectly heating the body, and a cylindrical reflecting portion provided below the mounting table and having an inner reflecting surface for reflecting irradiation light from the heating lamp toward the mounting table. And a forest, wherein the resilient mechanism is housed above the reflective member.
  • Another object of the present invention is to provide a heat treatment apparatus characterized in that an accommodation space for the heat treatment is formed.
  • the present invention further provides a heat treatment apparatus having a configuration in which two of the first to third heat treatment apparatuses are arbitrarily combined, and a first to third heat treatment apparatuses.
  • a heat treatment apparatus having a configuration in which all of the heat treatment apparatuses are combined is provided.
  • Another object of the present invention is to prevent a process gas from entering a temperature measurement hole of a mounting table into which a temperature detector is inserted, and to detect a temperature of the mounting table accurately.
  • An object of the present invention is to provide a processing device.
  • the present invention provides, as a fourth heat treatment apparatus, a heat treatment apparatus for heat-treating a plate-shaped object to be treated, wherein the treatment vessel is provided in the treatment vessel.
  • a mounting table having a temperature measurement hole extending from the outer peripheral surface toward the center thereof, and a mounting table inserted into the temperature measurement hole of the mounting table;
  • a ring-shaped attachment member provided in the processing container and having an inner peripheral portion for supporting a peripheral portion of the table; and a temperature sensor above the mounting table in the processing container.
  • a processing gas supply system for supplying a processing gas to the space, a pack side gas supply system for supplying a backside gas to a space below the mounting table in the processing container, and a heating for irradiating the mounting table from below.
  • the said ⁇ A heating lamp for indirectly heating an object to be processed on the table, wherein at least one of a peripheral portion of the mounting table and an inner peripheral portion of the attachment member is located at a position corresponding to the temperature measurement hole.
  • a gas flow promoting notch for promoting the flow of the backside gas from below to above the mounting table is formed, and a heat treatment apparatus is provided.
  • FIG. 1 is a cross-sectional view showing one embodiment of a heat treatment apparatus according to the present invention
  • FIG. 2 is a plan view showing the mounting state of the mounting table and the attachment member in the embodiment of FIG. 1;
  • FIG. 3 is a plan view showing the mounting table in the embodiment of FIG. 1;
  • FIG. 4 is a plan view mainly showing the attachment member in the embodiment of FIG. 1;
  • FIG. 5 is a partially enlarged cross-sectional view showing a supporting state of the mounting table in the embodiment of FIG. 1;
  • FIG. 7 is a perspective view showing the lift pin and the resilient mechanism in FIG. 7;
  • FIG. 7 is an operation explanatory view for explaining the operation of the lift pin and the clamp member in the embodiment in FIG. 1;
  • FIG. 8 is a perspective view showing the reflecting member in the embodiment of FIG. 1;
  • FIG. 9 is a plan view for explaining the positional relationship between the reflecting member and the developing mechanism in the embodiment of FIG. 1;
  • FIG. 10 is a graph showing processing uniformity in a wafer peripheral portion when a semiconductor wafer is processed using a processing apparatus employing the first characteristic configuration of the present invention and a conventional apparatus;
  • FIG. 11 is a graph showing the uniformity of processing at the periphery of a wafer when a semiconductor wafer is processed by using a processing apparatus employing the second characteristic configuration of the present invention and a conventional apparatus;
  • FIG. 12 is a graph showing the uniformity of processing at a wafer peripheral portion when a semiconductor wafer is processed using a processing apparatus employing the third characteristic configuration of the present invention and a conventional apparatus;
  • FIG. 13 is a graph showing the uniformity of processing at the peripheral portion of a wafer when a semiconductor wafer is processed using a processing apparatus employing a combination of the features of the present invention and a conventional apparatus;
  • FIG. 14 is a view for explaining a position where a pin passage portion is formed when the diameter of the mounting table is considerably larger than the diameter of the object;
  • FIG. 15 is a sectional view showing another embodiment of the processing apparatus of the present invention.
  • FIG. 16 is a plan view showing the mounting state of the mounting table, the attachment member, and the temperature detector in the embodiment of FIG. 15;
  • FIG. 17 is a plan view showing an attachment state of the attachment member and the detector in the embodiment of FIG. 15;
  • FIG. 18A is a partial enlarged sectional view showing the periphery of the shorter temperature measurement hole in the embodiment of FIG. 15;
  • FIG. 18B is a partial enlarged sectional view showing the periphery of the longer temperature measurement hole in the embodiment of FIG. 15;
  • FIG. 19 is a plan view of a mounting table showing a modification of the embodiment of FIG. 15;
  • FIG. 20 is a partially enlarged cross-sectional view showing the vicinity of a temperature measurement hole in the mounting table of FIG. 19;
  • FIG. 21 is a configuration diagram showing a general heat treatment apparatus;
  • FIG. 22 is a plan view mainly showing a mounting table portion.
  • FIG. 1 shows, as one embodiment of the present invention, a single-wafer-type film forming apparatus 34 capable of rapidly increasing the temperature using a heating lamp.
  • the processing apparatus 34 has a processing container 36 formed into a cylindrical shape or a box shape from, for example, aluminum or the like.
  • a shower head 38 is provided on the ceiling of the processing container 36 via a sealing member 39 such as an O-ring.
  • the shower head 38 is provided as a gas supply system for introducing a processing gas such as a film forming gas or a tally jung gas into the processing container 36.
  • the shower head 38 has a head body 40 formed into a circular box shape using, for example, aluminum or the like.
  • On the lower surface of the head main body 40 a large number of gas ejection holes 42 for discharging gas supplied into the head main body 40 are uniformly arranged. As a result, gas is uniformly released toward the surface of the wafer W on the mounting table 58 below.
  • the shower head 38 is not limited to this configuration, and may have various structures according to the type of processing gas to be used.
  • a ring-shaped gas flow stabilizing member 44 made of, for example, quartz is disposed on the side of the shower head 38 at the ceiling in the processing vessel 36 to stabilize the gas flow.
  • a gate valve G that is opened and closed when a wafer W is loaded and unloaded is provided on a side wall of the processing container 36.
  • the gate valve G is connected to, for example, a load lock chamber or a transfer chamber (not shown) which can be evacuated.
  • An exhaust port 46 is formed outside the bottom of the processing container 36.
  • An exhaust path 48 provided with a vacuum pump or the like (not shown) is connected to each exhaust port 46 so that the inside of the processing vessel 36 can be evacuated.
  • a cylindrical support column 50 is provided upright from the bottom of the processing vessel 36. On the outer peripheral side of the upper end of the support column 50, a rectifying plate 52 for regulating a downward gas flow is provided. Further, an auxiliary ring 54 made of, for example, aluminum is attached to the upper end of the support column 50 and extends to the inner peripheral side thereof. So An attachment member 56 made of, for example, quartz and also formed in a ring shape is supported on the inner edge of the member. As shown in FIG. 2, the attachment member 56 supports the mounting table 58 by its inner peripheral edge.
  • the mounting table 58 is formed of ceramics, for example, aluminum nitride into a thin disk shape having a thickness of, for example, about 3.5 mm.
  • the mounting table 58 is configured such that a semiconductor wafer W as a plate-shaped object having substantially the same diameter can be mounted on the upper surface thereof.
  • the back surface of the mounting table 58 is blackened so as to enhance absorption of irradiation light.
  • each pin passage portion 60 is formed as a rectangular cutout that is opened outward.
  • an engaging step portion 62 having a width W1 is formed along the circumferential direction.
  • the attachment member 56 holds the mounting table 58 by mounting the peripheral portion of the mounting table 58 on the engaging step 62.
  • thermal imbalance in the peripheral portion of the wafer W is suppressed.
  • a plurality of spacer members 64 are arranged at equal intervals along the circumferential direction. ing.
  • the mounting table 58 is supported such that the lower surface of the peripheral portion of the mounting table 58 is in contact with these spacer members 64.
  • the spacer member 64 is made of, for example, quartz, and has a thickness of, for example, about 0.5 mm. Further, in the engagement step portion 62, three notches 66 for passing lift pins, which will be described later, are formed at positions corresponding to the pin passage portions 60 of the mounting table 58. The mounting table 58 is supported such that the positions of the pin passage portions 60 and the notches 66 match (see FIG. 2). Further, the attachment member 56 has three rod insertion holes 68 formed therein so as to allow passage of an opening member for supporting a clamp member, which will be described later, corresponding to the position of the notch 66. I have.
  • a plurality of, for example, three L-shaped lift pins 70 are provided vertically obliquely below the mounting table 58 so as to rise upward (see FIG. 6). This riff By moving the tobin 70 up and down, the wafer W can be moved up and down through the communication portion 60 and the notch 66.
  • the lift pins 70 are arranged so as to be able to support the outer edge portion of the wafer W.
  • the diameter D1 of the lift pin 70 is, for example, about 5 mm.
  • the width W2 of the pin passage 60 of the mounting table 58 is, for example, about 4 mni.
  • the lift pins 70 support the wafer W at a part of the upper end thereof.
  • the overlap width W3 between the outer edge of the wafer W and the upper end of the lift pin 70 is, for example, about 3 mm. Since the transfer position accuracy of the wafer W is about ⁇ 0.2 mm, the position of the wafer W can be sufficiently controlled even with the above dimensions. Further, the overlap width W3 may be enlarged up to about 5 mm from the outer edge of the wafer W. As a result, the pin connection
  • Irradiation light from a heating lamp 108 (described later) passing through 60 suppresses thermal effects on the wafer W as much as possible.
  • a clamp member 72 for holding the wafer W so as not to be displaced is provided diagonally above the mounting table 58 outside.
  • the clamp member 72 is formed in a thin ring shape having a diameter that is about one larger than the diameter of the wafer W.
  • the clamp member 72 is formed of a material that has very low risk of metal contamination on the wafer W, has excellent heat resistance, and has a small amount of thermal expansion and contraction, for example, a ceramic such as aluminum nitride.
  • the lower surface of the inner peripheral portion of the clamp member 72 comes into contact with the upper surface of the peripheral portion of the wafer W and presses this downward, thereby pressing the wafer W against the mounting table 58 (see FIG. 7).
  • the clamp member 72 is provided with a spring mechanism 74 for applying a resilient force when the wafer is pressed (see FIG. 7).
  • the spring mechanism 74 includes a shaft member 76 having an upper end connected to the clamp member 72, a spring member 78 engaged with the lower end of the shaft member 76, and a spring member 78. And a developing member housing cylinder 80 made of, for example, quartz.
  • the three shaft members 76 are provided at substantially equal intervals along the circumferential direction of the clamp member 72. As shown in Fig. 7, each shaft member
  • the upper end of 76 is attached to the clamp member 72 via a C-ring 82.
  • the expansion member housing cylinder 80 is formed in a cylindrical shape, and a stopper projection 84 protruding upward is formed at a part of the upper end thereof.
  • the base of the shaft member 76 is housed.
  • the shaft member 76 is made of, for example, a metal material such as Ni alloy, and extends downwardly with a core rod 86 having a small diameter.
  • the core rod 86 extends downward through an upper horn 880 formed in the storage cylinder 80.
  • a lower stopper 90 and a C-ring 92 are attached to the lower end of the core rod 86.
  • a resilient member 78 such as a coil spring is mounted between the upper and lower stoppers 88 and 90 in a slightly compressed state. As a result, the shaft member 76 is constantly urged downward.
  • a lift bin 70 is integrally fixed to the lower part of the storage cylinder 80 toward the center of the container.
  • An arm member 94 made of, for example, quartz is attached and fixed to the lower part of the housing cylinder 80 so as to face outward in the horizontal direction.
  • Each arm member 94 is connected to a holding plate 96 formed of a ceramic, such as aluminum oxide, formed into a ring shape (see FIG. 6).
  • the holding plate 96 is joined to and fixed to the upper end of one vertically extending rod 98 extending vertically, and is cantilevered.
  • the lower end of the elevating rod 98 is connected to an unillustrated actuator via an extendable bellows 100 (see FIG. 1) in order to maintain an airtight state in the processing vessel 36.
  • a transmission window 102 made of a heat ray transmitting material such as quartz is provided airtightly at the bottom of the processing container directly below the mounting table 58 via a sealing member 104 such as an O-ring.
  • a box-shaped lamp chamber 106 is provided so as to surround the transmission window 102.
  • a plurality of heating lamps 108 are provided as heating means. These lamps 108 are mounted on a turntable 110 that also serves as a reflecting mirror. Therefore, the irradiation light (heat ray) emitted from the heating lamp 108 is transmitted through the transmission window 102 to irradiate the lower surface of the mounting table 58 to heat it.
  • a reflecting member 112 formed into a cylindrical shape by, for example, aluminum is provided on the bottom of the processing container 36 and inside the support column 50.
  • the diameter of the reflecting member 112 is set slightly larger than the diameter of the semiconductor wafer W.
  • the inner surface of the reflecting member 112 is mirror-finished so as to have a reflecting surface 112A.
  • the upper end of the reflecting member 112 extends to a position immediately below the attachment member 56.
  • each accommodation space 1 1 4 is, for example, a reflection member 1
  • the backside gas supply system 115 has a gas conduit 116 communicated with a space below the mounting table 58.
  • the gas introduction path 116 is connected to a gas source (not shown) so that Ar gas can be supplied while controlling the flow rate.
  • an unprocessed semiconductor wafer W accommodated in the load lock opening chamber or the transfer chamber is carried into the processing vessel 36 through the opened gate pulp G.
  • the wafer W is placed on the lift pins 70 with the lift pins 70 pushed up.
  • the lifting pin 70 is lowered by lowering the lifting rod 98, and the wafer W is mounted on the mounting table 58.
  • the peripheral portion of the wafer W is pressed by the clamp member 72 and fixed on the mounting table 58.
  • the heating lamp 108 in the lamp chamber 106 is turned on and rotated.
  • the irradiation light from the lamp 108 transmits through the transmission window 102 and then irradiates the back surface of the mounting table 58 to heat it.
  • the mounting table 58 is quickly heated because it is as thin as about 3.5 mm as described above. Therefore, The wafer W heated indirectly through the mounting table 58 can be quickly heated to the processing temperature.
  • a predetermined film forming process is performed.
  • a processing gas for example, in the case of forming a tungsten film, WF 6 gas, H 2 gas, or the like, which is a film forming gas, is supplied as a processing gas from the shower head 38 into the processing vessel 36.
  • the backside gas for example, Ar gas is supplied to the space below the mounting table 58 via the gas introduction path 1 16 of the backside gas supply system 115 at a controlled flow rate. This prevents the processing gas from entering the space below the mounting table 58 and depositing an unnecessary film on the lower surface of the mounting table 58 and the upper surface of the transmission window 102.
  • the processed wafer W is carried out of the processing vessel 36 in a procedure reverse to that for fixing the wafer W on the mounting table 58.
  • the irradiation light from the heating lamp 108 is transmitted directly through the transmission window 102 and then directly irradiates the black-treated rear surface of the mounting table 58 to heat it.
  • the irradiation light (especially infrared rays) that has passed through the pin passages 60 of the mounting table 58 tends to irradiate the rear surface of the wafer W and transmit the same. This is because the infrared transmittance of the wafer W is much higher than that of the mounting table 58. For this reason, the temperature at the part where the irradiation light irradiates the back surface of the wafer W is lower than at other parts.
  • the pin through portions 60 are provided so as to correspond to the outer edges of the wafer W. Therefore, unlike the conventional apparatus shown in FIG. 21 in which the pin holes 14 are provided considerably inside the outer peripheral surface of the mounting table 4, the irradiation light passing through the Even if the back surface of the wafer is directly irradiated, the adverse thermal effect on the wafer W is greatly suppressed. In other words, even if the temperature of only a few mm at the outer edge of the wafer W is lowered by the direct irradiation, the adverse effect on the heating temperature distribution of the whole wafer is minimized. This makes it possible to improve the uniformity of the in-plane processing of the wafer W.
  • the mounting table 4 was partially supported by the support protrusions 3OA, so that the temperature was high along the circumferential direction of the mounting table 4.
  • a low-temperature area (a shadow of irradiation light due to the projection 3 OA) occurs, and the wafer W Adversely affected the heating temperature distribution.
  • the peripheral portion of the mounting table 58 is perpendicular to the inner peripheral portion of the attachment member over the entire circumference. It is supported so as to overlap in the direction. Therefore, a uniform temperature distribution can be obtained along the peripheral portion of the mounting table 58 by uniform irradiation. As a result, the uniformity of the in-plane processing of the wafer W can be improved.
  • the irradiation light is directly applied to the resilient member housing cylinder 18.
  • the storage cylinder 18 caused a temperature drop in the mounting table portion, which was in the shadow of the irradiation light, and had an adverse effect on the heating temperature distribution of the wafer W.
  • a resilient member housing cylinder 80 is provided above the cylindrical reflection member 112. It was housed in the formed accommodation space 114. For this reason, there is no portion on the back surface of the mounting table 58 that becomes a shadow of the irradiation light due to the housing cylinder 80, and it is possible to suppress the adverse effect on the heating temperature distribution characteristics of the mounting table 58. As a result, the uniformity of the in-plane processing of the wafer W can be improved.
  • the vertical axis indicates the specific resistance (R s) as a reference for evaluating the in-plane uniformity of the processing.
  • the horizontal axis represents the circumferential position of the wafer W by an angle.
  • the film forming apparatus is provided with a pin hole 14 (FIG. 21) or a pin passage section 60 (FIG. 3) at 90 °, 210 °, and 330 ° in the circumferential direction of the wafer W. I have.
  • the in-plane uniformity of the processing in the case of the conventional apparatus is represented by a curve Y.
  • the specific resistance shows an extremely large peak at the positions of 90 °, 210 °, and 330 ° where the pin holes 14 are provided. ing. Also, the in-plane uniformity of the treatment is ⁇ 5.72%, which is a very poor value.
  • a case having the first characteristic configuration (the lift pins 70 are arranged on the outer edge of the wafer) is shown by a curve X1. In the curve X1, at the position of the pin passage portion 60 The peak values of the specific resistance are considerably lower, and the potom part is also considerably higher.
  • the in-plane uniformity of the treatment was ⁇ 4.33%, which was 1.39 ° / 0 better than that of the conventional apparatus.
  • FIG. 11 shows a case having the second characteristic configuration (the entire periphery of the mounting table 58 overlaps with the attachment member) by a curve X2.
  • the peak value of the specific resistance at the position of the pin passage 60 is considerably reduced.
  • the in-plane uniformity of the processing was found to be ⁇ 4.45%, which was improved by 1.27% compared to the conventional apparatus.
  • FIG. 12 shows a case having the third characteristic configuration (the resilient member accommodating cylinder 80 is accommodated in the accommodating space 114 of the reflecting member 112) by a curve X3.
  • the peak value of the specific resistance at the position of the penetrating portion 60 has not decreased so much, but the value of the bottom portion has risen considerably.
  • the in-plane uniformity of the processing was found to be ⁇ 4.87%, which was improved by 0.85% as compared with the conventional apparatus.
  • FIG. 13 shows a case having a combination of the above-mentioned second and third characteristic configurations by a curve Z1, and has a combination of all the above-described first to third characteristic configurations.
  • the case (corresponding to the device in FIG.
  • the pin communicating portion 60 has a cutout shape
  • the diameter of the mounting table 58 is substantially the same as the diameter of the wafer W.
  • the pin insertion portion 60 is formed as a through hole in the peripheral portion of the mounting table 58. Will be formed.
  • the distance from the center of the mounting table 58 to the pin insertion portion 60 is set to be the same.
  • a normal heat treatment apparatus detects the temperature in order to control the temperature of the mounting table. For example, a temperature measurement hole extending from the outer peripheral surface toward the center is formed in the mounting table 58. Then, a thermocouple or optical fiber port is inserted into the temperature measurement hole to detect the temperature. In this case, the backside gas is supplied below the mounting table 58 to make the lower part of the mounting table 58 slightly more positive than the processing space S above. However, since the gap formed between the outer peripheral surface of the mounting table 58 and the inner peripheral surface of the attachment member 56 is small, the processing gas on the processing space side tends to diffuse back into this gap.
  • the processing gas that has diffused back enters the temperature measurement hole of the mounting table 58, and causes formation of unnecessary deposited film and corrosion inside the hole. Therefore, the embodiments shown in FIGS. 15 to 20 are configured to suppress the intrusion of the processing gas into the temperature measurement hole.
  • the processing device 120 shown in FIG. 15 is configured exactly the same as the processing device 34 shown in FIG. 1 except for the points described below, so that the same components are denoted by the same reference numerals. Description is omitted.
  • the mounting table 58 of this processing apparatus 120 is formed with two temperature measurement holes 122, 124 extending from the outer peripheral surface toward the center (see FIGS. 16 and 18). .
  • the length of the first temperature measurement hole 122 is relatively short, and the tip is located slightly inside the outer end of the mounting table 58.
  • the length of the second temperature measurement hole 122 is longer than that of the first temperature measurement hole 122, and the tip thereof is located substantially at the center of the mounting table 58.
  • temperature detectors 126, 128 extending horizontally from the outside attachment member 56 side are inserted to the tip. The detectors 126 and 128 can measure the temperature at the periphery and the temperature at the center of the mounting table 58, respectively.
  • each of the temperature detectors 126, 128 is connected to a temperature measurement unit 130, where the temperature is actually detected.
  • the temperature detected by the temperature measurement unit 130 is, for example, micro It is input to a temperature control section 13 2 composed of a computer or the like.
  • the temperature control unit 132 controls the temperature of the mounting table 58 by adjusting the power supplied to the heating lamp 108 based on the detected temperature.
  • thermocouple an optical fiber rod / thermocouple is used as the temperature detectors 126 and 128, an optical fiber rod / thermocouple is used.
  • an optical fiber rod is used as the temperature detectors 126 and 128, light having a specific wavelength, such as infrared light, that has entered the rod is transmitted to the temperature measurement unit 130, Photoelectric conversion is performed by a phototransistor or the like.
  • the number of temperature detectors provided is not limited to two, and more temperature detectors may be used.
  • the mounting table can be divided into a plurality of concentric areas, and the temperature can be measured for each section to perform more precise temperature control.
  • the size of the gas flow promoting cutouts 13 6 and 1 38 is extremely small, for example, about 3 mm ⁇ 6 mm in length and width.
  • the in-plane uniformity of the thickness of the thin film deposited on the surface of the wafer W is not adversely affected.
  • each of the temperature detectors 126 and 128 is about lmm, while the inner diameter of each of the temperature measurement holes 122 and 124 is 1.1 to 1.5 mm. It is about.
  • the thickness of the mounting table 58 is about 3.5 mm as described above.
  • the material of the mounting table 58 is not particularly limited. For example, ceramic (A 1 N or the like) or amorphous carbon is used.
  • the processing gas for film formation supplied to the processing space S above the mounting table 58 is diffused and diffused into each of the temperature measurement holes 1 2 2 and 1 2 4 Into Try to break in.
  • the backside gas supplied below the mounting table 58 is supplied to each temperature measurement hole 1 2
  • the gas flow promoting notches 13 36 and 13 38 corresponding to the openings 2 and 124 the flow is promoted to the processing space S side. For this reason, it is possible to prevent the processing gas from being diffused and flowing to the space below the mounting table 58, as well as the processing gas being diffused into the temperature measurement holes 122, 124. Can also be prevented from intruding.
  • the gas flow promoting notches 13 6 and 13 8 may be provided on the peripheral edge of the mounting table 58 instead of the inner peripheral edge of the attachment member 56, or You may provide in both.
  • FIG. 19 is a plan view of a mounting table showing a modification in which gas flow promoting notches are provided on both sides
  • FIG. 20 is a partially enlarged cross-sectional view showing the vicinity of a temperature measurement hole in the mounting table of FIG. You.
  • the outer peripheral surface of the mounting table 58 has a small rectangular shape.
  • Gas flow promotion notches 144 and 146 are provided. According to this, the opening area of the gap through which the backside gas flows can be increased as long as the in-plane uniformity of the thickness of the thin film formed on the surface of the wafer W is not deteriorated.
  • the film forming process is described as an example of the heating process.
  • the present invention is not limited thereto, and the present invention can be applied to an annealing process, an oxidation diffusion process, and the like.
  • a semiconductor wafer has been described as an example of a plate-shaped object to be processed.
  • the present invention is not limited to this, and it is needless to say that the present invention can be applied to a glass substrate, an LCD substrate and the like.

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de traitement thermique dans lequel un objet en forme de plaque devant être traité (W) est placé sur un étage (58) ménagé dans un récipient de traitement (36); ce dispositif permet de réaliser un traitement thermique tel que la formation d'une pellicule. Une broche de levage (70) permet de relever et d'abaisser l'objet à traiter depuis et sur l'étage. Cet objet est indirectement chauffé par chauffage de l'étage en forme de plaque au moyen d'une lampe à rayons infrarouges (108) disposée en-dessous. La broche de levage est conçue pour relever et abaisser l'objet à traiter depuis et sur l'étage. L'étage est pourvu d'une portion trou d'épingle (60) pour permettre à la broche de levage de passer à travers cette portion dans une position correspondant à la portion d'arête de l'objet à traiter. Une telle structure permet de réduire l'effet négatif sur la répartition de la température de l'étage dispensée par la lumière émise émanant de la lampe passant à travers la portion trou d'épingle.
PCT/JP2003/013640 2002-10-24 2003-10-24 Dispositif de traitement thermique Ceased WO2004038777A1 (fr)

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JP2002/310345 2002-10-24

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US8238731B2 (en) 2008-03-25 2012-08-07 Dainippon Screen Mfg. Co., Ltd. Light-emitting heat treatment apparatus
CN104064499A (zh) * 2008-05-02 2014-09-24 应用材料公司 用于旋转基板的非径向温度控制系统
CN110931388A (zh) * 2018-09-20 2020-03-27 东京毅力科创株式会社 载置单元和处理装置
CN114868236A (zh) * 2019-12-10 2022-08-05 应用材料公司 用于混合激光刻划与等离子体蚀刻晶片单切处理的具有降低的电流泄漏的静电吸盘

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WO2012118897A2 (fr) 2011-03-01 2012-09-07 Applied Materials, Inc. Chambre de décapage et d'élimination de matières résiduelles présentant une configuration de sas de chargement double
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
JP7300365B2 (ja) * 2019-10-21 2023-06-29 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置

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US8238731B2 (en) 2008-03-25 2012-08-07 Dainippon Screen Mfg. Co., Ltd. Light-emitting heat treatment apparatus
CN104064499A (zh) * 2008-05-02 2014-09-24 应用材料公司 用于旋转基板的非径向温度控制系统
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CN110931388A (zh) * 2018-09-20 2020-03-27 东京毅力科创株式会社 载置单元和处理装置
CN110931388B (zh) * 2018-09-20 2023-09-29 东京毅力科创株式会社 载置单元和处理装置
CN114868236A (zh) * 2019-12-10 2022-08-05 应用材料公司 用于混合激光刻划与等离子体蚀刻晶片单切处理的具有降低的电流泄漏的静电吸盘

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