WO2004019668A1 - Perforated substrate, method for manufacturing same and full wafer contact board - Google Patents

Abstract

A perforated substrate is obtained by drilling many holes (5) in a glass substrate (1) by vibrating a drilling jig having a plurality of drills (3). After filling each hole of the perforated substrate with a conductive member, the perforated substrate is subjected to a heat treatment at a temperature which is not lower than the softening temperature of the glass substrate and at which the substrate can keep its shape, so that the conductive member is fixed in each hole. A cooling treatment may be conducted after the heat treatment to thermally shrink the substrate. After fixing the conductive member in the perforated substrate, the surfaces of the perforated substrate are polished to expose the conductive member from the back and front sides of the substrate. A wired substrate can be obtained by providing each side of the polished substrate with a wiring layer.

Description

 Description Hole forming substrate, method of manufacturing the same, and wafer contact board

 The present invention relates to a hole-formed substrate in which a conductive member is buried in a hole formed with the substrate, a method of manufacturing the same, and the like, and more particularly, to a through-hole formed substrate having a through-hole penetrating the substrate, The present invention relates to a method for manufacturing a double-sided wiring board and a wafer-filled (full-wafer) contact board using the double-sided wiring board. Background art

 Generally, this type of through-hole forming substrate is used for an inspection device for semiconductors and the like. Here, taking the semiconductor inspection process as an example, the semiconductor inspection process is performed in a plurality of stages. Usually, wafers manufactured in the wafer manufacturing process (pre-process) are cut (diced) after probe card inspection, and then packaged, followed by burn-in inspection and final inspection. In recent years, methods for performing various inspections in a wafer state have been proposed. In this case, the wafer manufactured in the wafer manufacturing process (pre-process) undergoes probe card inspection, wafer level burn-in (WLBI) inspection, and final inspection. After the final inspection, the wafer is cut.

 Of the above-mentioned tests, the probe card test is generally a DCZAC test using one chip or a multi-contact probe card (up to 64 chips). In such a probe force, as shown in FIGS. 6A and 6B, an opening 62 is provided at the center of a multilayer wiring board 61 made of glass epoxy resin, and the periphery of the opening 62 is provided. A probe (probe) 63 is provided toward the center of the opening 62 from the probe 62, and the probe 63 is brought into contact with the electrode terminal 42 on the one chip 41 of the wafer 40 to perform a test. There is a probe card.

Also, as shown in FIG. 7, one of the membranes 71 made of polyimide or the like is used. A membrane probe card of a type using a membrane 70 with bumps provided with bumps 72 (convex contacts) on the surface as a contact component has also been proposed. In FIG. 7, the bumps 72 are electrically connected to the wiring 74 via the through holes 73 formed in the membrane 71, and the bumps 72 are formed on the conductive material 75, the pivot mechanism 76, the plate panel 7 It is pressed through 7 and contacted.

 Burn-in inspection is a high-temperature accelerated test that is usually performed on a chip-by-chip basis, and often involves electrical testing. When performing burn-in inspection on a wafer, it is called wafer level burn-in (WL B I). When conducting burn-in inspection on wafers, it is necessary to commercialize wafer-contact contact boards (burn-in pads).

 The final inspection includes the final electrical test, a simple on-off test, and a function test at the actual operating frequency of the device. Specifically, one or more bare chips and packaged products are pressed directly against the test head using the handler via the interposer and measured. In some cases, measurement is performed using a high-frequency probe card (up to 64 chips) in the wafer state. Disclosure of the invention

 At present, the probe card inspection process described above covers from 1 chip to 64 chip multi-measurement, but if this is possible, it is possible to greatly reduce the inspection time and the cost Becomes possible.

 Similarly, if the burn-in board for wafers for high frequency applications can be put to practical use, the inspection time can be greatly reduced, and the inspection cost can be significantly reduced.

In order to realize a wafer contact port for high frequency applications, it is conceivable to apply the contact port technology developed mainly for batch burn-in inspection of wafers. However, in such a technique, a glass substrate is used as a core substrate of a multilayer wiring substrate in order to realize contact with all chips on a wafer. The core substrate using this glass substrate is a single-sided wiring in which a wiring layer is formed only on one surface, so the number of wiring layers formed on the surface increases, and fine processing is required, resulting in high costs. There is. In addition, the length of the extraction electrode (wiring) becomes longer in terms of characteristics, and as a result, the resistance value increases and the impedance increases. There is also a disadvantage that matching and equal length wiring become difficult. Furthermore, there are problems such as an increase in crosstalk, and it is currently difficult to manufacture a wafer-bound contact board for high-frequency applications. Therefore, when a glass substrate is used as a core substrate, it is difficult to realize a probe for wafer-bound probe inspection at a high frequency. As described above, the wiring layer is formed on one side of the glass substrate surface. Since it is formed only on the (wafer side), there is an inconvenience that elements such as resistors, capacitors, and fuses cannot be mounted on the wiring layer. This is because, since the device has a thickness, electrodes such as contact bumps provided on the glass substrate cannot contact the pad on the wafer due to the effect of the device having a large thickness. Therefore, it is considered that a probe detection probe using a glass substrate cannot be applied to high frequency applications or DC inspection applications.

 Although it is possible to form a device on a glass substrate as a thin film device on a wiring layer, the cost is greatly increased and the technical difficulty is high at present. The problem is that the cost is far below the practical cost, and it is no longer practical.

 From the above, the wafer-bound contact port for high-frequency applications for inspecting wiring boards such as LSI inspections and MCMs (multi-chip modules) is a through-hole (narrow pitch) that electrically connects the front and back surfaces. It is considered necessary to form a large number of thin, high-precision through holes on the entire surface of the substrate and a board with a multilayered structure. However, a double-sided wiring board in which a large number of through holes are formed in a glass substrate has not yet been proposed. This is because when using a glass substrate, there are many problems to be solved in terms of accuracy, thermal expansion, and surface flatness, and mechanical strength and workability.

 Here, as a method for manufacturing a double-sided wiring board from a glass substrate, a method of drilling one hole in a glass substrate with a drill (for example, Japanese Utility Model Registration No. 30844542) can be considered. If thousands to tens of thousands of holes are formed by a drill, the cost of hundreds of thousands to several millions of yen is required, and it is impossible to realize the cost at all.

On the other hand, molten glass is poured into a molding frame with a plurality of linear conductors stretched, or a plurality of linear conductors are sandwiched between two sheet glasses to soften or fluidize the sheet glass. To form a block body in which a plurality of linear conductors are buried, and cut the block body to obtain a through-hole-formed substrate (Japanese Patent Laid-Open No. H10-19001). However, when these methods are applied to thin wires, the wires may actually bend and the position is not determined, and the position accuracy of the through-hole must be ensured. There is a problem that it is difficult.

 In addition, a method of pressurizing and inserting a wire into the softened glass is conceivable.However, in the case of a thin wire, there is a problem that the wire is bent and the position cannot be determined. However, the lower end of the wire must be exposed by polishing a considerable amount, and the polishing time is increased, and the cost is greatly increased.

 Furthermore, in these methods, when trying to manufacture a through-hole-formed substrate in which a large number of thin through holes with narrow pitch and high position accuracy are formed on the entire surface of the substrate, the cost of manufacturing a molding frame with a plurality of linear conductors stretched is reduced. In actuality, it is necessary to manufacture a through-hole-formed board in which a large number of thin and fine through-holes with high positional accuracy are formed on the entire surface of the board due to the huge cost of installing and inserting or inserting wires. Is not feasible at all in terms of cost.

 As described above, a through-hole-formed substrate in which a large number of thin through holes with fine pitch and high position accuracy are formed on the entire surface of the substrate has been demanded, but has not been realized at present at all. Currently, there is no prospect of a satisfying manufacturing method.

 For this reason, it has not been possible to actually fabricate a wafer consolidation contact port that makes contact with the entire surface of the wafer and satisfies a certain level of high-frequency transmission characteristics. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a hole-formed substrate and a through-hole formed substrate, which can easily and inexpensively realize a wafer-bound contact port for high frequency use.

An object of the present invention is to provide a hole forming substrate capable of rapidly forming a large number of holes and accurately embedding a conductive member in the formed holes, and a method of manufacturing a through hole forming substrate. Still another object of the present invention is to provide a through-hole substrate which is constituted by a glass substrate having excellent flatness and which can prevent disconnection of a wiring layer and the like. The present invention has the following configuration.

 (Configuration 1) A step of burying a conductive member in each hole of the hole-formed substrate having a large number of holes formed therein, and after embedding the conductive member, heat-treating the hole-formed substrate together with the buried conductive member, A step of fixing the conductive member to each hole.

 (Structure 2) In the structure 1, the conductive member fixing step may include heating the hole-forming substrate at a temperature equal to or higher than a softening point temperature of the hole-forming substrate and equal to or lower than a temperature at which a substrate shape can be maintained. A method for manufacturing a hole-formed substrate, comprising a step of fusing a conductive member.

 (Constitution 3) In the constitution 1, the conductive member fixing step may include a step of heating the hole formation substrate at a temperature higher than a softening point temperature of the hole formation substrate and lower than a temperature at which a substrate shape can be maintained; Cooling the substrate after heating to thereby thermally shrink the substrate, whereby the conductive member is fixed to each hole.

In (Configuration 4) Configuration 1, the hole forming substrate is made of glass material, in the conductive member fixing step, so that the viscosity of the glass becomes 1 0 ⁴ -1 0 ¹¹ poises, heat the pre-Symbol hole forming substrate A method for manufacturing a hole-formed substrate, comprising:

 (Structure 5) In the structure 1, a substrate to be processed and a drill jig in which a plurality of drills are implanted are prepared, and a drill jig having the plurality of drills is provided on one surface of the substrate to be processed. A method of manufacturing a hole-formed substrate, comprising: forming a plurality of holes at once by vibrating the drill jig in a state where the tools are in contact with each other, and forming the hole-formed substrate.

 (Structure 6) A method of manufacturing a hole-formed substrate according to structure 5, wherein ultrasonic waves are applied to the drill jig to form a plurality of holes at a time.

(Structure 7) In the structure 1, the step of burying the conductive member may include the step of embedding a linear conductor having a smaller diameter in each hole of the hole forming substrate on the surface of the hole forming substrate in which the hole is formed. After placing, each hole is given by applying vibration to the hole substrate. The method of manufacturing the hole forming substrate, characterized by embedding by inserting the conductor to _C

(Constitution 8) In the constitution 1, in the step of burying the conductive member, fine metal particles may be used as the conductive member, and the fine metal particles may be vibrated to fill each hole of the hole forming substrate. A method for manufacturing a hole-formed substrate, wherein the conductive member is embedded.

 (Configuration 9) A step of burying a conductive member in each hole in the hole-formed substrate having a large number of holes formed therein, and after embedding the conductive member, heat-treating the hole-formed substrate together with the buried conductive member, A conductive member fixing step of fixing the conductive member in each hole; and a step of polishing the surface of the hole-formed substrate to which the conductive member is fixed to expose the conductive member on both opposing surfaces. A method for manufacturing a through hole forming substrate.

 (Configuration 10) A step of burying a conductive member in each hole in the hole-formed substrate having a large number of holes formed therein, and after burying the conductive member, heat-treating the hole-formed substrate together with the buried conductive member, A conductive member fixing step of fixing the conductive member to each of the holes, a step of polishing the surface of the hole-formed substrate to which the conductive member is fixed, and exposing the conductive member on both opposing surfaces; and Forming a wiring layer on the exposed conductive member on at least one of the two surfaces.

 (Structure 11) A wafer-bound contact board characterized by being configured using the wiring board described in Structure 10.

 (Configuration 12) In a substrate having a configuration in which a plurality of conductive members are embedded in a plurality of holes, the substrate is formed of a glass material, and the surface on which the conductive members are embedded has a maximum height R max of 2 m. A substrate polished to have the following surface roughness.

In the invention described in the configuration 1, after the conductive member is buried (after insertion or filling) in each hole in the hole forming substrate in which a large number of holes (holes) (not necessarily through holes) are formed, the hole forming substrate is A conductive member fixing step of fixing the conductive member in each hole by heat treatment together with the embedded conductive member. Further, in the invention according to Configuration 2, the conductive member fixing step is performed at a temperature equal to or higher than a softening temperature of the hole-forming substrate, The method includes a step of fusing the conductive member by heating the substrate to a temperature at which the substrate shape can be maintained, and the conductive member can be sufficiently fixed by fusing. The invention according to the third aspect further includes a step of heat-shrinking the substrate by cooling the hole-formed substrate after heating, and fixing the conductive member. The conductive member can be firmly fixed by the heat shrinkage. In addition, since sealing is performed without gaps by fusion and heat shrinkage, corrosion resistance and the like can be improved. As described above, the present invention includes the step of fixing the conductive member by fusion and Z or heat shrinkage, so that even if the number of through holes is large, it can be fixed at once, An inexpensive (low-priced) through-hole forming substrate can be realized. Further, since a conductive member is inserted or filled into each hole in the hole-formed substrate in which a large number of holes (not necessarily through-holes) are formed, Japanese Patent Application Laid-Open No. When the linear conductor (wire, etc.) is thin, there is no problem that it may bend or not be inserted sufficiently, and there is no problem with the positioning accuracy of the through hole. Examples of the conductive member include a linear conductor (for example, a wire), metal particles, and other conductive materials. In the case of wire, there is no risk of disconnection.

 It is preferable to add a step of pressing the upper end portion or the like of the linear conductor during fusion and heat shrinkage. This is because the linear conductor is completely inserted into the through hole, eliminating defects and further reducing the amount of polishing to reduce cost.

In the invention of structure 4 wherein said hole forming substrate as the glass material, the viscosity of the glass at the conductive member fixing step heats the glass material so that 1 0 ⁴ -1 0 ¹¹ poises. 1 0 ⁴ poises means working temperature temperature (molding temperature) around the glass, when it from the low viscosity, not keep the board shaped glass is excessively softened. Further, 1 0 ¹¹ poises means the viscosity near the yield point of the glass, when it than the viscosity is high, it is difficult to mold the glass. Preferably, it is preferable to heat such that the glass viscosity becomes 1 0 ^5-1 0 ⁸ poises.

In the invention according to the fifth aspect, the hole-forming substrate may include a plurality of holes formed by vibrating the drill jig in a state where the drill jig having the plurality of drills is in contact with one surface of the substrate to be processed. Are formed all at once, so a larger number of holes are required than when using a single-blade drill or a single-blade ultrasonic drill to drill holes sequentially. Since the holes are formed together, the cost of a hole-formed substrate having a large number of holes can be realized. In addition, according to Configuration 6, by applying ultrasonic waves to the drill jig to form a plurality of holes at once, the drill jig has a narrow pitch (for example, 3 mm pitch or less) and is thin (for example, the through hole diameter is small). It was found that a substrate having a large number of holes (0.5 πιπιφ or less) formed on the entire surface of the substrate could be obtained. In other words, it was found that even if many holes were finely formed at a narrow pitch, there was no breakage at all. This is thought to be due to the fact that the processing is performed with the drill bit inserted in all the holes, and the force acts uniformly. Drilling a new hole at a narrow pitch near an already formed hole may cause damage.

 It is preferable that the drill for applying the ultrasonic wave is formed by forming a large number of drill blades on one surface of the substrate, the number and the number of drills being stably self-supporting with respect to the substrate to be processed. If the drill is not stable and self-supporting, it is difficult to keep the drill horizontal with respect to the substrate to be processed, and it is not possible to realize vertical drilling with high hole diameter accuracy.

 Further, it is preferable that the drill to which the ultrasonic wave is applied has a large number of drill blades formed and arranged on one surface of the substrate so that the drill blades are not bent by their own weight. If the drill blade is bent by the weight of the drill, drilling with vertical and high hole diameter accuracy cannot be realized.

 Specifically, the number of drill bits is preferably 50 or more, more preferably 100 or more. For example, for a wafer contact board, the number of drill blades is preferably 500 or more, and more preferably 100 or more, from the viewpoint of reducing the number of drilling times and the cost of manufacturing a drill.

The hole formed by the drill may be a through hole that penetrates the substrate to be processed or a hole that does not penetrate. If it does not penetrate, no linear conductor (eg, wire) or metal particles that enter or fill the hole will fall out of the bottom opening, so no measures to prevent falling off are necessary. If not penetrated, the non-penetrated part is removed by polishing to expose the linear conductor (for example, wire) and metal particles. When penetrating, the diameter of the bottom opening is smaller than the diameter of the linear conductor or metal particle, and the diameter of the linear conductor or metal particle is smaller than that of the bottom opening. It is possible to adopt a method of preventing falling off or adopting a method of mixing a linear conductor or metal particles into a paste having high viscosity and pouring the mixture into a hole. Of course, one side may be covered with a sheet material, a high-viscosity liquid coating agent or the like after the formation of the through holes.

 By applying ultrasonic waves to the drill and setting the surface roughness of the substrate before forming a large number of holes to 2 m or less at the maximum height Rmax, a large number of ultrasonic waves can be applied. When holes are collectively formed, the occurrence of cracks (breakage) due to cracks and scratches on the surface of the substrate to be processed can be effectively reduced. The preferred surface roughness is an arithmetic average roughness Ra of 0.2 m or less, more preferably, a Ra of 0.1 m or less. The arithmetic average roughness Ra described above is measured based on the measurement method defined in JIS B601-1994. In addition, in order to make the surface of the substrate before forming a large number of holes by applying ultrasonic waves to the drill into the above-described surface roughness, the surface of the substrate to be processed is ground or polished. Existing cracks and scratches can be minimized, and cracks (breakage) can be effectively reduced when a large number of holes are formed at once by applying ultrasonic waves. There is an advantage called. In addition, as an ultrasonic wave, an ultrasonic wave having a frequency of several kHz to several hundred kHz can be used.

 As in the inventions described in Configurations 7 and 8, when a linear conductor (for example, a wire) (vibration 7) or fine metal particles (configuration 8) is inserted into each hole of the hole forming substrate by vibration, It was found that linear conductors and fine metal particles were automatically inserted into all holes. The vibration in this case is several Hz to several tens Hz. Therefore, it was found that the cost of the step of inserting the linear conductor or metal fine particles can be extremely reduced. In particular, when the number of through holes into which linear conductors or metal fine particles are inserted is large, the effect of this configuration is enormous. As the number of through holes increases, the method of aligning each hole and inserting linear conductors or fine metal particles increases the cost and is not feasible in terms of economy.

From the viewpoint that the linear conductor is automatically and smoothly inserted into all holes, the diameter of the linear conductor is 90% or less of the hole diameter, further 85% or less, and further 80%. It is preferable to set the following. Similarly, the length of the linear conductor is preferably about the same as the depth of the hole, more preferably slightly longer than the depth of the hole, and more preferably about 1.1 times the depth of the hole. The material of the linear conductor is preferably a material that allows the linear conductor to be automatically and smoothly inserted into all the holes.

 Note that it is also possible to insert a linear conductor by vibrating with ultrasonic waves having a frequency of several kHz or more instead of vibration. It has been found that ultrasonic vibration is preferable from the viewpoint of reliability.

 Further, as in the invention according to the ninth aspect, using the hole-forming substrate obtained in any one of the first to eighth aspects, the surface of the hole-forming substrate to which the conductive member is fixed is polished, and the conductive member is provided on both opposed surfaces. By exposing, a through-hole-formed substrate in which the front and back surfaces of the substrate are electrically connected by the conductive member is obtained.

 In addition, in the above-mentioned configuration 9, after the conductive member is fused and / or fixed, a step of polishing one or both surfaces of the substrate is provided, whereby the metal surface of the conductive member can be exposed, and the oxide film can be formed. Problems can be avoided. Also, by removing the ends (portions protruding from the holes) of the linear conductor by polishing, complicated work such as adjusting the length of the linear conductor is not required. In addition, the polishing can impart or improve the flatness of the substrate. Furthermore, if the surface of the substrate and the end surface of the conductive member are made flush with each other by polishing, the level of the flush is higher than in the case of flushing with other methods. This is advantageous in terms of connectivity.

 The polishing amount on one side is preferably 1 mm or less, more preferably 0.5 mm or less from the viewpoint of manufacturing cost. The substrate surface after polishing has a maximum height R max of 2 or less, preferably 0.2 m or less. As described above, a substrate having a flat surface, particularly a glass substrate, has an advantage that even if a thin wiring layer is formed on the surface, disconnection or the like does not occur in the wiring layer.

 In the invention according to the tenth aspect, an inexpensive wiring board can be realized by using the inexpensive through-hole formation substrate according to the ninth aspect and forming a wiring layer on the conductive member exposed on at least one surface.

In the configuration 10, the wiring layer can be a single layer or a multilayer. Further, the wiring layer can be formed on any one surface or both surfaces. Both wiring layers If it is formed on one side, it will be a double-sided wiring board. The wiring layer includes wiring and electrodes. For forming the wiring layer, a photolithography method, a built-up method (in the case of a multilayer), a printing method, or other known wiring or multilayer wiring technology is used. The wiring board described in the configuration 10 is particularly suitable as a multilayer wiring board for a wafer-bound contact board when the number of through holes is large (for example, 200 or more). In the wafer-bound contact board according to the invention described in Configuration 11, the through-hole-forming substrate, which is the base material of the double-sided wiring substrate, needs to have low thermal expansion and high surface flatness. This is for contacting the whole surface with the wafer and conducting and inspecting. It is preferable that the through-hole-forming substrate, which is the base material of the double-sided wiring substrate, has a coefficient of thermal expansion of 15 ppm or less. It is preferable that the surface flatness over the entire through-hole forming substrate, which is the base material of the double-sided wiring substrate, is 40 m or less.

 In the wafer contact board of the present invention, it is necessary to use, as a base material of the double-sided wiring board, a through-hole forming substrate in which a large number of narrow through holes with a narrow pitch are formed with high precision over the entire surface. This is in order to satisfy a certain level of transmission characteristics (high-frequency transmission characteristics required for probe inspection and specific burn-in inspection).

 In the present invention, a large number of narrow through holes with a narrow pitch are formed on the entire surface of the substrate in order to correspond to an electrode to be inspected such as a semiconductor element.

 An object of the present invention is to make it possible to manufacture a wafer-contacted contact board in order to satisfy a certain level of transmission characteristics (high-frequency transmission characteristics required for a burn-in inspection specific to probe inspection) by contacting the entire surface. A large number of narrow through holes with a narrow pitch are formed on the entire surface of the substrate.

 According to the present invention, through a through hole and an electrode formed on the front side corresponding to each chip on the front side of a double-sided wiring board (preferably a multilayer double-sided wiring board) constituting the main part of the wafer contact pad. It is preferable that the conductive pad electrode on the back surface is basically formed near the upper part of the chip on the wafer and has a structure in which conduction to the outside is connected almost vertically or by the shortest path. That is, the back pad is preferably formed at the shortest position with respect to the electrode on each chip.

In the present invention, the through-hole-formed substrate may have a standardized conductive through-hole on the entire surface of the substrate so that the type of the device under test can be changed. Is preferably formed at the position. By doing so, it can be manufactured at a low cost. For example, through holes can be formed radially, concentrically, or in an array over the entire surface of the substrate.

 It is preferable that the substrate size of the wafer-contacting contact port is at least as large as the wafer size. The thickness of the substrate is preferably about 2 to 7 mm in order to obtain mechanical durability and accurately form a through-hole. The number of through holes is determined in relation to the number of chip elements such as resistors and capacitors mounted on the substrate, and is preferably the number of chip elements X 2 (for example, 100 or more). It is preferable that the pitch of the through-holes is 3 mm or less as long as the mechanical durability between the through-holes can be obtained, and the diameter of the through-hole is 0.1 to 0.5 πιπιφ.

 The wafer package contact port includes a wafer package burn-in inspection board, a wafer batch probe inspection board, and a wafer package final inspection port. '

 Heretofore, a wafer batch contact port manufactured using such a through-hole formed substrate having a large number of through-holes formed on the entire surface of the substrate has not been obtained. In other words, it is characterized in that a through-hole forming substrate having a large number of through-holes formed on the entire surface of the substrate is used.

 Further, as in the invention according to Configuration 12, in a substrate having a configuration in which a plurality of conductive members are embedded in a plurality of holes, the substrate is formed of a glass material, and a surface in which the conductive member is embedded has a maximum height. By using a substrate polished so as to have a surface roughness of 2 μm or less at R max, disconnection of a wiring layer formed on the surface of the substrate can be prevented. In particular, when the thickness of the wiring layer is equal to or greater than the thickness having a function as the wiring layer and is as small as 5 m or less, the substrate of Configuration 12 is particularly effective. BRIEF DESCRIPTION OF THE FIGURES

 1 (1) to 1 (7) are schematic views showing a method of manufacturing a through-hole formed substrate according to an embodiment of the present invention in the order of steps.

2 (1) to 2 (7) show through-hole-formed substrates according to another embodiment of the present invention. FIG. 4 is a schematic view showing a manufacturing method of the present invention in the order of steps.

 FIG. 3 is a graph showing a viscosity curve of the low expansion glass used in the embodiment of the present invention.

 FIG. 4 is a schematic view illustrating a wafer contact port including a through hole forming substrate according to the present invention.

 FIG. 5 is a schematic view for explaining another wafer contact contact including the through hole forming substrate according to the present invention.

 6 (a) and 6 (b) are a plan view and a cross-sectional view illustrating an example of a probe card.

 FIG. 7 is a partial cross-sectional view for explaining another probe card. BEST MODE FOR CARRYING OUT THE INVENTION

 Method for manufacturing through-hole-formed substrate A

 Process (1) Preparation of low expansion glass substrate

 As shown in FIG. 1 (1), for example, a low expansion glass substrate 1 made of HOYA low expansion glass substrate NA45 (size 23 OmmX 230 mm, 5 mm thick) is prepared.

 (The surface roughness of the low-expansion glass substrate 1 was Ra, which was 0.2 μm or less. The surface roughness was measured using a stylus type surface roughness meter (trade name: Tencor Ρ2: Tencor Measured by Instruments).

The viscosity curve (temperature vs viscosity (log)) of the low expansion glass substrate # 45 has the characteristics shown in FIG. This viscous force one blanking, the temperature range in which the viscosity of the glass becomes 1 0 ⁴ -1 0 ¹¹ poises is found to be 710 ° C~1 17 5 ° C.

 Process (2) Ultrasonic drilling

 Flat size 1 0 5 mm X 105 mm, 3 mm thick stainless steel substrate 2, 3 x 30 = 900 holes drilled in a 3 x 30 screw holes with a pitch of 3 mm and a diameter of 0.5 mm. (8 mm in length) is inserted to form a drill jig with drill 3. The drill 3 forming the drill jig 3 is formed of stainless steel, iron, tungsten, or the like.

Insert the drill 3 in a sword mountain shape on the glass substrate 1 as shown in Fig. 1 (2). While placed on the 3010515, the abrasive 4 is immersed in water and processed by ultrasonic waves at 38 kHz while supplying between the glass substrate 1 and the drill 3 (Fig. 1 (2)).

 Process (3) Drill a hole 5 with the same diameter as the drill 3 to a depth of 4.5 mm by ultrasonic machining. Actually, the position of the stainless steel plate is shifted and processed four times, and 900 x 4 = a total of 3600 holes 5 are accurately drilled in an array. After that, the abrasive is washed away (Fig. 1 (3)).

 Process (4) Insert a linear conductor (one wire)

 As shown in Fig. 1 (4), a number of tungsten wires 6 (diameter 0.4 ΦΧ length 5.5 mm) are placed on the glass substrate 1 and subjected to the same ultrasonic vibration as in Fig. 1 (2). The wire 6 is automatically inserted into the hole at once.

 If tungsten wire is used, the wire 6 can be automatically and smoothly inserted into all holes, and it can be recovered and reused, so that it is also environmentally friendly.

 Process (5) Wire fusion by heating glass substrate

After confirming that the wire 6 is inserted into all the holes, remove the extra wire 6 and place a flat polished carbon on the top of the wire 6 standing at the hole, or heat resistance of 1,200 ° C or more is material of the plate 7 (size 250mmX 250m m, 30mm thickness) loaded with, as it is placed on a glass substrate of a flat surface, the viscosity of 800 ° C (glass in a nitrogen atmosphere and a 1 0 ⁸ poises (Fig. 1 (5)).

 At this time, the glass is softened, and the wire 16 is introduced into the softened glass (at the bottom of the hole) by the weight of the force plate 7, and further melts with the glass hole into which the wire 16 is inserted. The wire 6 is attached and fixed.

 At this time, the wire 6 is inserted into the glass left at the bottom of the hole drilled in the glass substrate with a thickness of 0.5 mm. It is not necessary that the wire 6 protrude from the bottom of the hole. In step (5), pressurization of the wire 6 may be omitted. Process (6) Cooling glass substrate

The diameter of the wire 16 is smaller than the diameter of the through hole. When the glass is softened and cooled, the through-hole shrinks and the wire 6 is firmly fixed. Then wire The attached glass substrate is cooled to room temperature (Fig. 1 (6)).

 Step (7) Double-side polishing (a step of exposing both ends of the wire to the surface of the glass substrate) Both surfaces of the glass substrate with wires are polished flat, and the wires 6 are completely exposed to the front and back surfaces of the glass substrate.

 At this time, the exposed surface of the wire 16 and the front and back surfaces of the glass substrate 1 need to be polished so that they substantially coincide with each other. The surface roughness at this time was less than 0.2 m at the maximum height Rmax.

 Thereafter, by thoroughly cleaning the polished surface, a through-hole-formed substrate 10 in which the front and back surfaces of the glass substrate 1 can be electrically connected via the wires 6 inserted into the through-holes is completed ( Figure 1 (7)).

 At this time, the thickness of the through-hole formed substrate 10 was about 4 mm.

 Method of manufacturing through-hole-formed substrate B

 Process (1) Preparation of low expansion glass substrate

 As shown in FIG. 2 (1), for example, a low expansion glass substrate 1 made of HOYA low expansion glass substrate NA45 (size 23 OmmX 230 mm, 5 mm thick) is prepared. (The surface roughness of the surface of the low expansion glass substrate 1 was Ra, which was 0.2 μm or less. The surface roughness was measured by a stylus type surface roughness meter (Tencor P2). )

 Process (2) Ultrasonic drilling

 Flat size 105 mm x 105 mm, 3 mm thick stainless steel substrate 2, 3 x 30 = drill holes of 0.5 mm in diameter 3 x 30 = 900 holes drilled in total in an array, and M0.5 screw in the screw hole ( Insert the entire length 8mm) to form a stainless steel drill 3. In this way, a drill jig similar to that shown in Fig. 1 (2) is obtained. The drill jig is placed on the glass substrate 1, while the polishing agent 4 is immersed in water and applied with 38 kHz ultrasonic waves while being supplied between the glass substrate 1 and the drill 3 for processing (Fig. 2 (2)).

Process (3) Drill a hole 5 with the same diameter as the drill 3 by 4.5 mm in depth by ultrasonic machining. Actually, the stainless steel plate 2 that constitutes the drill jig is shifted four times and processed four times, and 900 x 4 = a total of 3600 holes 5 are accurately drilled in an array. After that, the abrasive is washed away (Fig. 2 (3)). Note that the above steps (1) to (3) are the same as the above-mentioned production method A.

 Process (4) Inserting metal fine particles

 In this manufacturing method, metal fine particles 8 were used instead of the wires. When the fine metal particles 8 are vibrated, the fine metal particles 8 are automatically and collectively inserted into the holes (FIG. 2 (4)). Here, as the metal fine particles 8, metal fine particles of solder, tungsten, copper, nickel, gold, silver, or the like, or fine particles of an alloy thereof, or metal particles of nickel or the like whose surface is plated with gold can be used. In any case, it is desirable that the metal fine particles 8 have a particle diameter of 1/10 or less of the hole diameter. When a mixture of gold storm particles having different particle sizes is used, the packing density of the metal fine particles in the hole can be increased. Instead of the metal fine particles 8, a method in which metal particles or the like are dispersed in a dispersant (adhesive, resin, or the like) may be used to fill the holes. In this case, when the drilled hole is completely penetrated, the metal particles dispersed in the dispersant can be completely filled in the hole.

 Process (5) Fusion and fixation of metal particles by heating glass substrate

After confirming that the metal microparticles 8 are inserted into all the holes, remove the extra metal microparticles 8 and place a flat polished carbon Place the 2 0 0 ° C or more is material of the plate 7, it is placed on a glass substrate of a flat table, in a nitrogen atmosphere 1 0 5 0 ° C (the temperature at which the viscosity of the glass becomes 1 0 ⁵ poises) (Fig. 2 (5)). During heating, the metal microparticles 8 may be melted or may not be melted, as long as they are fixed in the through holes.

 When the glass is softened, the metal microparticles 8 are sufficiently fixed by fusion, and the metal microparticles 8 are firmly fixed by heat shrinkage due to cooling after heating because the diameter of the metal microparticles 8 is small even in the through hole. Is done.

 In step (5), pressurizing the metal fine particles may be omitted.

 Step (6) After that, unnecessary metal fine particles are removed, and the glass substrate filled with the metal fine particles in the through-hole is cooled to room temperature (FIG. 2 (6)).

 Process [7] Double-side polishing

Both sides of the glass substrate filled with metal fine particles 8 in through holes are polished flat Then, both ends of the metal fine particles 8 are completely exposed on the front and back surfaces of the glass substrate 1.

 At this time, it is necessary to polish the exposed surface of the metal fine particles 8 and the front and back surfaces of the glass substrate 1 so as to substantially coincide. The front and back surfaces of the polished glass substrate 1 had a maximum height R max of 0.2 m or less.

 After polishing, the front and back surfaces are washed to obtain a through-hole-formed substrate 10 in which the front and back surfaces of the glass substrate 1 are electrically connected via the fine metal particles 8 inserted into the through-hole (FIG. 7))).

 At this time, the thickness of the through-hole-formed substrate 10 was about 4 mm.

 In the step (7), when a metal particle or the like dispersed in a dispersant is used instead of the metal fine particle 8, the protruding dispersant and the conductive member such as the metal particle are removed by polishing, The substrate can be flattened.

 Fabrication of double-sided wiring board

 Using the through-hole-formed substrate (core substrate) A or B formed by the above method, a wiring layer is formed on both surfaces thereof to produce a double-sided wiring board.

 Note that it is not necessary to use all of the through holes (for example, 360) formed on the entire surface of the through hole forming substrate, and some of them can be used depending on the application. Specifically, the design is such that the wiring passes over the used through-holes, and the design does not allow the wiring to pass over the unused through-holes.

 It is preferable to design the wiring so that the wiring that needs to be conductive between the front and back is connected through the nearest through hole. Also, it is preferable to design the through-hole formation position (and number) and wiring so that the wiring length on the front and back sides is as short as possible.

 Through-hole forming substrate (core substrate) Wiring layers are formed on both sides of A or B by the spattering method or the plating method. Specifically, a Cr film is formed by sputtering at a thickness of about 300 angstroms, a Cu film is formed at a thickness of about 2.5 urn, and a Ni film is formed at a thickness of about 0.3 zm. A Cr / Cu / Ni wiring layer is formed.

 Next, based on the wiring design, a predetermined photolithography process (resist coating, exposure, development, etching) is performed, and the CrZCuZNi wiring layer is patterned.

'' Double-sided wiring with wiring patterns formed on both sides of a single-hole-formed substrate Five substrates were fabricated.

 Fabrication of multilayer double-sided wiring board

 Next, a photosensitive polyimide precursor is applied on the first wiring pattern with a thickness of 10 m using a spinner or the like to form a polyimide insulating film, and a contact hole is formed in the polyimide insulating film. Specifically, the contact holes were formed by baking the coated photosensitive polyimide precursor at 80 ° C. for 30 minutes, exposing and developing using a predetermined mask.

 Next, a CrZCuZNi wiring layer is formed on the polyimide insulating film in which the contact hole is formed in the same manner as described above, and the CrZCuZNi wiring layer is patterned in the same manner as described above to form a second-layer wiring pattern. Was formed to obtain a multilayer double-sided wiring board in which two-layer wiring patterns were formed on both sides of the through-hole forming substrate.

 The film material of the wiring layer of the multilayer double-sided wiring board, the material of the insulating layer, the number of wiring layers and insulating layers, the film thickness, and the method of manufacturing the multilayer double-sided wiring board are not limited to those described above.

 As the film material of the wiring layer, a Cr / CuZN i / Au multilayer structure, a CuZN i / Au multilayer structure, or the like may be used in addition to the above-mentioned CrZCuZNi.

 Examples of the material of the insulating layer include an acrylic resin and an epoxy resin in addition to the polyimide described above. Among them, polyimide having a low expansion coefficient and excellent in heat resistance and chemical resistance is preferable.

 In the manufacturing method of the multilayer double-sided wiring board, the wiring layer and the wiring pattern are formed simultaneously on both sides in the above description, but the wiring layer and the wiring pattern may be formed one by one while protecting the back surface.

 Fabrication example 1 of wafer contact board

 The wafer contact board of Production Example 1 was composed of a multilayer double-sided wiring board, an anisotropic conductive rubber sheet, and a membrane with bumps (Fig. 4).

As shown in FIG. 4, in the wafer contact board 20, the multilayer double-sided wiring board (having a size of 20 Omm ^ or more) is a core substrate A or 3600 through-holes formed in an array on the entire surface of the substrate by the above method. It is manufactured by forming a multilayer wiring layer on both sides using B, and the wiring on both sides is electrically contacted by conductive members (wires, metal fine particles, etc.) inserted in through holes. ing.

 On the wiring on the back side of the multilayer double-sided wiring board, wiring for conducting electricity from the outside and pads for connecting to the outside are formed. The pad portion is electrically connected to the tester using, for example, a pogo pin (an extensible pin containing a panel). Here, not only the peripheral portion of the multilayer double-sided wiring board but also the entire surface including the central portion is electrically connected to the tester.

 The wiring on the front side of the multilayer double-sided wiring board consists of wiring for passing electric signals, elements (chip resistors, chip capacitors, etc.) and pad electrodes corresponding to the pad electrodes formed on the wafer to be inspected. And are formed. Then, a bumped membrane formed by forming an isolated pad and an isolated bump on the front and back surfaces of a polyimide film or the like via an anisotropic conductive sheet with cushioning properties in the middle layer (isolated pad on the front and back surfaces Z via hole between isolated bumps) It is electrically connected to the pad electrode on the wafer via the bump.

 Basically, the multilayer double-sided wiring board shown in Fig. 4 has the number of holes and the required through-holes so that the through holes are evenly drilled per chip corresponding to the chips formed on the wafer. A plurality of pads are formed on the back side with a wider pitch and fewer pads than the pads on the front side corresponding to the pads formed on the wafer, but through holes are formed on the entire back side It is characteristic that it is done. The pad electrode on the back surface connected through the through hole corresponding to each chip on the front side is basically formed near the upper part of the wafer chip, and conduction to the outside is connected almost vertically or by the shortest path.

 This core substrate has conductive through holes throughout the substrate (a conductive member is inserted into the through hole so that the front and back surfaces of the substrate can be electrically connected so that the type of device under test can be changed). Are formed at predetermined positions and standardized. By doing so, it is possible to manufacture at low cost.

The through holes are formed radially, concentrically or in an array on the entire surface of the core substrate, all of which are filled with wires, fine metal particles, or conductive paste, solder metal, or metal plating. . Board hole If there is a gap between 2003/010515 and its conductive material (for example, when filled with fine metal particles), the gap may be sealed with a non-conductive material such as resin.

 The core substrate material must be heat-resistant because it is used at high temperatures, and it must have excellent positional accuracy at low and high temperatures. Therefore, the coefficient of thermal expansion must be 15 ppm or less. The difference in the coefficient of thermal expansion must be 13.82 ppm or less), preferably 10 ppm or less, more preferably 5 ppm or less. Such materials include, for example, ceramics such as Si, alumina, SiC, and SiN, Pyrex, quartz glass, aluminoborosilicate glass, and Corning 705, 11八 Low-expansion glass such as Eighty-four, forty-five and forty-five. The core substrate material does not necessarily need to be an insulating material. However, when a low expansion metal (Ni alloy or the like) or a semiconductor such as Si or SiC is used as the core substrate material, the inside of the through hole should be insulated with oxide, resin, etc. Therefore, it is necessary to embed the conductive material inside the through hole. As described above, when an insulating substrate is not used, it is necessary to form wiring after insulating the surface, but conversely, by grounding the core substrate itself using the conductivity of the core substrate, A multilayer wiring board having excellent high-frequency characteristics and low-noise characteristics can be obtained. In this case, it goes without saying that the GRD of the wiring is conducted to the conductive portion inside the core substrate (the portion in which the conductive material is embedded without insulating the inside of the through hole).

 When the core substrate material is a photosensitive glass, the photosensitive glass substrate is exposed through a mask so that a latent image is formed in a portion where a large number of holes are formed, and the exposed portion is crystallized. The crystallized region may be dissolved and removed to form a large number of holes to form a core substrate. In this case, narrower holes (small through-hole diameters) can be formed at a high precision with a narrower pitch.

The anisotropic conductive sheet is formed so as to have conductivity in the vertical direction, and may have a structure in which wires are buried in an elastic body such as rubber in the vertical direction, and conductive particles such as metal may be used. A structure embedded on one side or locally may be adopted. In the membrane structure with bumps, for example, an isolated copper pad is formed on the back surface of a polyimide film, and a metal pad formed by a photolithography method may be formed on the front surface thereof. But it may be The isolated pad on the PC leakage 003/010515 surface and the pad or bump on the front side are electrically connected through the inside of the film. The structure of the flexible film may be reversed. The bumped membrane has flexibility, but does not have to have cushioning.

 Example of making a wafer contact board 2

 The wafer contact board of Fabrication Example 2 consists of a multilayer double-sided wiring board and a small contact probe with spring properties (Fig. 5).

 As shown in Fig. 5, the pad electrode on the front side of the multilayer double-sided wiring board in the wafer contact node 20 is a small contact probe (釙 material or structural) that has spring properties (material or structural). ) Can be connected to the pad electrode on the wafer via the above. Here, the wire material such as a needle having a paneling property is mechanically and electrically bonded to the pad electrode on the front side of the multilayer double-sided wiring board by soldering, heat fusion, or other methods. For example, the metal wires may be joined by applying a wire-to-bonding technique, or the joining may be carried out by using a technique such as a fine solder formed by applying a micromachine technique.

 The pad electrode on the front side of the multilayer double-sided wiring board may be configured to be directly connected to the pad electrode on the wafer.

 The pad electrode on the front side of the multilayer double-sided wiring board may be configured to be connected to the pad electrode on the wafer via an anisotropic member such as an anisotropic elastic sheet that can be repeatedly contacted.

 A bump (convex electrode) made of a soft material such as a conductive compressive material (eg, solder pole, Au, etc.) is formed on the pad electrode on the front side of the multilayer double-sided wiring board or on the pad electrode itself. A contact (one-time contact) or a member that is not durable repeatedly is formed, or formed separately (sandwiched) and connected to the electrodes of the device under test, elements, etc. You can also. Other items are the same as those in the first example of the wafer-bound contact port.

Note that, in the above examples 1 and 2 of manufacturing the wafer contact board, a multi-layer double-sided wiring board was used. Needless to say, the substrate may be used. Industrial applicability

 According to the method for manufacturing a through-hole-formed substrate of the present invention, after a conductive member is inserted or filled in a hole (hole) formed in the substrate, the temperature is reduced to a temperature not lower than the softening temperature of the substrate and not higher than the temperature at which the shape of the substrate can be maintained. By heating the substrate, the conductive member can be sufficiently fixed by fusion. Further, the conductive member can be firmly fixed by heat shrinkage due to cooling after heating. Furthermore, since sealing is performed without gaps by fusion and heat shrinkage, corrosion resistance and the like can be improved. Further, since the conductive member is fixed by fusion and / or heat shrinkage, it can be fixed at a time even if the number of through holes is large. Further, by inserting the wire by vibration, extremely low cost of the wire inserting process can be achieved.

 Further, according to the method of manufacturing a through-hole formed substrate of the present invention, a large number of drills are arranged at regular intervals on one surface of a substrate to be processed, and ultrasonic waves are applied to the drills to form a large number of holes on the substrate to be processed. Since the holes are collectively formed, the cost of a through-hole forming substrate having a large number of holes can be realized. Therefore, an inexpensive double-sided wiring board can be realized using this inexpensive through-hole formed substrate.

 According to the present invention, by combining the above-described inventions, a through-hole formed substrate with high precision, low thermal expansion, and excellent surface flatness, in which a large number of narrow and fine through holes with high positional accuracy are formed on the entire surface of the substrate, is inexpensive Can be realized.

 According to the method for manufacturing a wafer-bound contact board of the present invention, a wafer-bound contact board for high-frequency applications can be realized.

Claims

The scope of the claims 1. a step of burying a conductive member in each hole of the hole-formed substrate having a large number of holes formed therein; and, after embedding the conductive member, heat-treating the hole-formed substrate together with the buried conductive member to form each of the holes. And a conductive member fixing step of fixing the conductive member.  2. The conductive member fixing step according to claim 1, wherein the hole-forming substrate is heated to a temperature equal to or higher than a softening point temperature of the hole-forming substrate and equal to or lower than a temperature at which a substrate shape can be maintained. A method for manufacturing a hole-formed substrate, comprising a step of fusing members.  3. The method according to claim 1, wherein the conductive member fixing step comprises: heating the hole forming substrate at a temperature equal to or higher than a softening point temperature of the hole forming substrate and equal to or lower than a temperature at which a substrate shape can be maintained; And a step of heat-shrinking the substrate by cooling, whereby the conductive member is fixed in each hole. 4. In claim 1, wherein the hole forming substrate is made of glass material, in the conductive member fixing process, so that the viscosity of the glass becomes 1 0 ⁴ to 1 0 ¹¹ poise, heating the hole forming substrate A method for producing a hole-formed substrate.  5. The method according to claim 1, further comprising preparing a substrate to be processed and a drill jig in which a plurality of drills are implanted, and contacting a drill jig having the plurality of drills with one surface of the substrate to be processed. A method for manufacturing a hole-formed substrate, comprising: forming a plurality of holes in a lump by vibrating the drill jig in this state to form the hole-formed substrate.  6. The method for manufacturing a hole-formed substrate according to claim 5, wherein ultrasonic waves are applied to the drill jig to collectively form a plurality of holes. 7. The method according to claim 1, wherein the step of burying the conductive member comprises placing a linear conductor having a diameter smaller than that of each hole of the hole forming substrate on the surface of the hole forming substrate in which the hole is formed. Then, the conductor is inserted and buried in each of the holes by applying vibration to the hole substrate. 8. The method according to claim 1, wherein the step of burying the conductive member uses metal fine particles as the conductive member, and fills each hole of the hole-forming substrate by applying vibration to the metal fine particles. A method for manufacturing a hole-formed substrate, comprising burying a conductive member.  9. A step of burying a conductive member in each hole of the hole-formed substrate having a large number of holes formed therein, and after burying the conductive member, heat-treating the hole-formed substrate together with the buried conductive member to form each of the holes. A conductive member fixing step of fixing the conductive member, and a step of polishing the surface of the hole-formed substrate to which the conductive member is fixed to expose the conductive member on both opposing surfaces. A method for manufacturing a through-hole forming substrate.  10. A step of burying a conductive member in each hole of the hole-formed substrate in which a large number of holes are formed; and, after embedding the conductive member, heat-treating the hole-formed substrate together with the buried conductive member. A conductive member fixing step of fixing the conductive member in the hole, a step of polishing the surface of the hole-formed substrate to which the conductive member is fixed, and exposing the conductive member on opposing surfaces; and Forming a wiring layer on the exposed conductive member on at least one surface.  11. A wafer contact hole, which is constituted by using the wiring substrate according to claim 10.  1 2. In a substrate having a configuration in which a plurality of conductive members are embedded in a plurality of holes, the substrate is formed of a glass material, and the surface on which the conductive members are embedded is a surface having a maximum height R max of 2 m or less. A substrate characterized by being polished to have roughness.