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WO2004004025A3 - Verfahren zur kostengünstigen strukturierung von leitfähigen polymeren mittels definition von hydrophilen und hydrophoben bereichen - Google Patents

Verfahren zur kostengünstigen strukturierung von leitfähigen polymeren mittels definition von hydrophilen und hydrophoben bereichen Download PDF

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Publication number
WO2004004025A3
WO2004004025A3 PCT/DE2003/001888 DE0301888W WO2004004025A3 WO 2004004025 A3 WO2004004025 A3 WO 2004004025A3 DE 0301888 W DE0301888 W DE 0301888W WO 2004004025 A3 WO2004004025 A3 WO 2004004025A3
Authority
WO
WIPO (PCT)
Prior art keywords
structuring
economical
hydrophilic
sections
conducting polymers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2003/001888
Other languages
English (en)
French (fr)
Other versions
WO2004004025A2 (de
Inventor
Ute Zschieschang
Marcus Halik
Hagen Klauk
Guenter Schmid
Tarik Kriem
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of WO2004004025A2 publication Critical patent/WO2004004025A2/de
Publication of WO2004004025A3 publication Critical patent/WO2004004025A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1208—Pretreatment of the circuit board, e.g. modifying wetting properties; Patterning by using affinity patterns
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0329—Intrinsically conductive polymer [ICP]; Semiconductive polymer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1173—Differences in wettability, e.g. hydrophilic or hydrophobic areas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung von Leiterstrecken aus einem elektrisch leitfähigen organischen Material. Dazu werden auf einer Substratoberfläche durch Aufdrucken einer Matrizenverbindung Abschnitte definiert, so dass eine Substratoberfläche mit hydrophilen und hydrophoben Abschnitten erhalten wird. Auf die strukturierte Substratoberfläche wird eine Lösung des elektrisch leitfähigen organischen Polymers gegeben, wobei entweder nur die hydrophilen Abschnitte oder nur die hydrophoben Abschnitte von der Lösung des organischen Polymers benetzt werden. Das Verfahren ermöglicht die Darstellung von Linien mit einer Linienbreite von weniger als 10 µm und erfordert keine fotolithografischen Prozessschritte.
PCT/DE2003/001888 2002-06-28 2003-06-06 Verfahren zur kostengünstigen strukturierung von leitfähigen polymeren mittels definition von hydrophilen und hydrophoben bereichen Ceased WO2004004025A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10229118A DE10229118A1 (de) 2002-06-28 2002-06-28 Verfahren zur kostengünstigen Strukturierung von leitfähigen Polymeren mittels Definition von hydrophilen und hydrophoben Bereichen
DE10229118.7 2002-06-28

Publications (2)

Publication Number Publication Date
WO2004004025A2 WO2004004025A2 (de) 2004-01-08
WO2004004025A3 true WO2004004025A3 (de) 2004-05-06

Family

ID=29795964

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/001888 Ceased WO2004004025A2 (de) 2002-06-28 2003-06-06 Verfahren zur kostengünstigen strukturierung von leitfähigen polymeren mittels definition von hydrophilen und hydrophoben bereichen

Country Status (2)

Country Link
DE (1) DE10229118A1 (de)
WO (1) WO2004004025A2 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
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US8876272B2 (en) 2007-06-25 2014-11-04 Qd Vision, Inc. Compositions and methods including depositing nanomaterial
US8906804B2 (en) 2006-04-07 2014-12-09 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing materials
US9120149B2 (en) 2006-06-24 2015-09-01 Qd Vision, Inc. Methods and articles including nanomaterial
CN106206402A (zh) * 2016-08-16 2016-12-07 苏州华博电子科技有限公司 一种曲面上精密薄膜电路制作方法

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EP1610399A1 (de) * 2004-06-22 2005-12-28 Samsung SDI Co., Ltd. Substrat zum Tintenstrahldrucken und Verfahren zu dessen Herstellung
DE102004035267B3 (de) * 2004-07-21 2006-02-09 Forschungszentrum Karlsruhe Gmbh Formkörper, Verfahren zu seiner Herstellung und seine Verwendung
EP1622212B1 (de) 2004-07-29 2010-04-21 Konarka Technologies, Inc. Verfahren zur Beschichtung von nanostrukturierte Elektroden
US10225906B2 (en) * 2004-10-22 2019-03-05 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US20060105148A1 (en) * 2004-11-12 2006-05-18 Eastman Kodak Company Article with patterned layer on surface
DE102004058209A1 (de) * 2004-12-02 2006-06-08 Printed Systems Gmbh Verfahren und Vorrichtung zur Erzeugung von Strukturen aus Funktionsmaterialien
DE602005025074D1 (de) 2004-12-08 2011-01-13 Samsung Mobile Display Co Ltd Methode zur Herstellung einer Leiterstruktur eines Dünnfilmtransistors
KR100647695B1 (ko) 2005-05-27 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치
KR101137862B1 (ko) * 2005-06-17 2012-04-20 엘지디스플레이 주식회사 평판표시소자의 제조방법
GB2432044A (en) * 2005-11-04 2007-05-09 Seiko Epson Corp Patterning of electronic devices by brush painting onto surface energy modified substrates
JP4831406B2 (ja) * 2006-01-10 2011-12-07 ソニー株式会社 半導体装置の製造方法
US20080230773A1 (en) * 2007-03-20 2008-09-25 Nano Terra Inc. Polymer Composition for Preparing Electronic Devices by Microcontact Printing Processes and Products Prepared by the Processes
KR20100016643A (ko) 2007-04-19 2010-02-12 바스프 에스이 기판 상에 패턴을 형성하는 방법 및 그에 의해 형성된 전자 장치
KR101107160B1 (ko) * 2009-07-10 2012-01-25 삼성모바일디스플레이주식회사 유기 발광 표시 장치 및 그 제조 방법
WO2013003253A2 (en) * 2011-06-30 2013-01-03 3M Innovative Properties Company Apparatus and method for microcontact printing on indefinite length webs
JP6321678B2 (ja) * 2012-12-31 2018-05-09 スリーエム イノベイティブ プロパティズ カンパニー ロールツーロールプロセスにおけるマイクロコンタクトプリンティングのための再インク付けローラー
US9763370B2 (en) * 2013-03-15 2017-09-12 National Technology & Engineering Solutions Of Sandia, Llc Apparatus for assembly of microelectronic devices
CN118500189A (zh) * 2024-05-24 2024-08-16 大连理工大学 一种用于强迫对流换热的宏观亲/疏水结构交错分布的复合表面及其制备方法和应用

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8906804B2 (en) 2006-04-07 2014-12-09 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing materials
US9034669B2 (en) 2006-04-07 2015-05-19 Qd Vision, Inc. Methods of depositing nanomaterial and methods of making a device
US9120149B2 (en) 2006-06-24 2015-09-01 Qd Vision, Inc. Methods and articles including nanomaterial
US8876272B2 (en) 2007-06-25 2014-11-04 Qd Vision, Inc. Compositions and methods including depositing nanomaterial
CN106206402A (zh) * 2016-08-16 2016-12-07 苏州华博电子科技有限公司 一种曲面上精密薄膜电路制作方法

Also Published As

Publication number Publication date
WO2004004025A2 (de) 2004-01-08
DE10229118A1 (de) 2004-01-29

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