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WO2004065046A3 - Ensemble cible de pulverisation a materiau friable et procede de fabrication associe - Google Patents

Ensemble cible de pulverisation a materiau friable et procede de fabrication associe Download PDF

Info

Publication number
WO2004065046A3
WO2004065046A3 PCT/US2004/001441 US2004001441W WO2004065046A3 WO 2004065046 A3 WO2004065046 A3 WO 2004065046A3 US 2004001441 W US2004001441 W US 2004001441W WO 2004065046 A3 WO2004065046 A3 WO 2004065046A3
Authority
WO
WIPO (PCT)
Prior art keywords
target assembly
backing plate
sputtering target
thermal expansion
brittle material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/001441
Other languages
English (en)
Other versions
WO2004065046A2 (fr
Inventor
Eugene Y Ivanov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh SMD Inc
Original Assignee
Tosoh SMD Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh SMD Inc filed Critical Tosoh SMD Inc
Priority to US10/526,754 priority Critical patent/US20060281991A1/en
Publication of WO2004065046A2 publication Critical patent/WO2004065046A2/fr
Publication of WO2004065046A3 publication Critical patent/WO2004065046A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00Soldering, e.g. brazing, or unsoldering
    • B23K1/0008Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00Coating not provided for in groups C23C2/00 - C23C24/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé pour produire un ensemble cible de pulvérisation fabriqué dans un matériau à coefficient de brasure d'expansion thermique faible, relié à une plaque arrière présentant un coefficient d'expansion thermique similaire à celui du matériau de l'ensemble cible. Ledit procédé comprend le traitement à chaud du matériau de l'ensemble cible et de la plaque arrière, la liaison par brasure du matériau de l'ensemble cible et de la plaque arrière, et le refroidissement lent de l'ensemble à température ambiante. La concordance des coefficients d'expansion thermique du matériau de l'ensemble cible et de la plaque arrière minimise dans l'ensemble la distorsion provoquée par la déviation et la contrainte interne.
PCT/US2004/001441 2003-01-22 2004-01-21 Ensemble cible de pulverisation a materiau friable et procede de fabrication associe Ceased WO2004065046A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/526,754 US20060281991A1 (en) 2003-05-09 2004-01-21 Fiducial marker holder system for surgery

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44181503P 2003-01-22 2003-01-22
US60/441,815 2003-01-22

Publications (2)

Publication Number Publication Date
WO2004065046A2 WO2004065046A2 (fr) 2004-08-05
WO2004065046A3 true WO2004065046A3 (fr) 2004-09-30

Family

ID=32771979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/001441 Ceased WO2004065046A2 (fr) 2003-01-22 2004-01-21 Ensemble cible de pulverisation a materiau friable et procede de fabrication associe

Country Status (1)

Country Link
WO (1) WO2004065046A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008033192A1 (fr) 2006-09-12 2008-03-20 Tosoh Smd, Inc. Ensemble cible de pulvérisation et procédé de fabrication de celui-ci
JP5344864B2 (ja) * 2008-07-31 2013-11-20 富士フイルム株式会社 成膜装置および成膜方法
CN103917685B (zh) 2011-11-08 2016-11-09 东曹Smd有限公司 具有特殊的表面处理和良好颗粒性能的硅溅射靶及其制造方法
CN104125870A (zh) 2012-02-14 2014-10-29 东曹Smd有限公司 低偏转溅射靶组件及其制造方法
CN111515484B (zh) * 2020-05-11 2022-04-15 宁波江丰电子材料股份有限公司 一种高纯铝靶材的焊接方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188680A (en) * 1981-05-16 1982-11-19 Kemisuton:Kk Target for sputtering and production thereof
JPH04168267A (ja) * 1990-10-31 1992-06-16 Hitachi Metals Ltd スパッタリング用接合体
US5320984A (en) * 1990-12-21 1994-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere
US5879524A (en) * 1996-02-29 1999-03-09 Sony Corporation Composite backing plate for a sputtering target
US5965278A (en) * 1993-04-02 1999-10-12 Ppg Industries Ohio, Inc. Method of making cathode targets comprising silicon

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188680A (en) * 1981-05-16 1982-11-19 Kemisuton:Kk Target for sputtering and production thereof
JPH04168267A (ja) * 1990-10-31 1992-06-16 Hitachi Metals Ltd スパッタリング用接合体
US5320984A (en) * 1990-12-21 1994-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere
US5965278A (en) * 1993-04-02 1999-10-12 Ppg Industries Ohio, Inc. Method of making cathode targets comprising silicon
US5879524A (en) * 1996-02-29 1999-03-09 Sony Corporation Composite backing plate for a sputtering target

Also Published As

Publication number Publication date
WO2004065046A2 (fr) 2004-08-05

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