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WO2004065046A3 - Brittle material sputtering target assembly and method of making same - Google Patents

Brittle material sputtering target assembly and method of making same Download PDF

Info

Publication number
WO2004065046A3
WO2004065046A3 PCT/US2004/001441 US2004001441W WO2004065046A3 WO 2004065046 A3 WO2004065046 A3 WO 2004065046A3 US 2004001441 W US2004001441 W US 2004001441W WO 2004065046 A3 WO2004065046 A3 WO 2004065046A3
Authority
WO
WIPO (PCT)
Prior art keywords
target assembly
backing plate
sputtering target
thermal expansion
brittle material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/001441
Other languages
French (fr)
Other versions
WO2004065046A2 (en
Inventor
Eugene Y Ivanov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh SMD Inc
Original Assignee
Tosoh SMD Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh SMD Inc filed Critical Tosoh SMD Inc
Priority to US10/526,754 priority Critical patent/US20060281991A1/en
Publication of WO2004065046A2 publication Critical patent/WO2004065046A2/en
Publication of WO2004065046A3 publication Critical patent/WO2004065046A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method for producing a sputtering target assembly (20) made from a material with a low coefficient of thermal expansion solder bonded to a backing plate (8) with a coefficient of thermal expansion similar to that of the target assembly material (6). The method includes heat treating the target assembly material (6) and backing plate (8), solder bonding the target assembly material (6) and backing plate (8), and slowly cooling the assembly to room temperature. Matching the coefficients of thermal expansion of the target assembly material (6) and backing plate (8) minimizes distortion in the assembly caused from deflection and internal stress.
PCT/US2004/001441 2003-01-22 2004-01-21 Brittle material sputtering target assembly and method of making same Ceased WO2004065046A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/526,754 US20060281991A1 (en) 2003-05-09 2004-01-21 Fiducial marker holder system for surgery

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44181503P 2003-01-22 2003-01-22
US60/441,815 2003-01-22

Publications (2)

Publication Number Publication Date
WO2004065046A2 WO2004065046A2 (en) 2004-08-05
WO2004065046A3 true WO2004065046A3 (en) 2004-09-30

Family

ID=32771979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/001441 Ceased WO2004065046A2 (en) 2003-01-22 2004-01-21 Brittle material sputtering target assembly and method of making same

Country Status (1)

Country Link
WO (1) WO2004065046A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008033192A1 (en) 2006-09-12 2008-03-20 Tosoh Smd, Inc. Sputtering target assembly and method of making same
JP5344864B2 (en) * 2008-07-31 2013-11-20 富士フイルム株式会社 Film forming apparatus and film forming method
CN103917685B (en) 2011-11-08 2016-11-09 东曹Smd有限公司 Silicon sputtering target with special surface treatment and good particle properties and method of manufacturing the same
CN104125870A (en) 2012-02-14 2014-10-29 东曹Smd有限公司 Low deflection sputtering target assembly and method of manufacturing the same
CN111515484B (en) * 2020-05-11 2022-04-15 宁波江丰电子材料股份有限公司 Welding method of high-purity aluminum target

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188680A (en) * 1981-05-16 1982-11-19 Kemisuton:Kk Target for sputtering and production thereof
JPH04168267A (en) * 1990-10-31 1992-06-16 Hitachi Metals Ltd Coupling body for sputtering
US5320984A (en) * 1990-12-21 1994-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere
US5879524A (en) * 1996-02-29 1999-03-09 Sony Corporation Composite backing plate for a sputtering target
US5965278A (en) * 1993-04-02 1999-10-12 Ppg Industries Ohio, Inc. Method of making cathode targets comprising silicon

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57188680A (en) * 1981-05-16 1982-11-19 Kemisuton:Kk Target for sputtering and production thereof
JPH04168267A (en) * 1990-10-31 1992-06-16 Hitachi Metals Ltd Coupling body for sputtering
US5320984A (en) * 1990-12-21 1994-06-14 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor film by sputter deposition in a hydrogen atmosphere
US5965278A (en) * 1993-04-02 1999-10-12 Ppg Industries Ohio, Inc. Method of making cathode targets comprising silicon
US5879524A (en) * 1996-02-29 1999-03-09 Sony Corporation Composite backing plate for a sputtering target

Also Published As

Publication number Publication date
WO2004065046A2 (en) 2004-08-05

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