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WO2003030272A2 - Procede d'encapsulation de dispositifs electroniques - Google Patents

Procede d'encapsulation de dispositifs electroniques Download PDF

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Publication number
WO2003030272A2
WO2003030272A2 PCT/EP2002/010963 EP0210963W WO03030272A2 WO 2003030272 A2 WO2003030272 A2 WO 2003030272A2 EP 0210963 W EP0210963 W EP 0210963W WO 03030272 A2 WO03030272 A2 WO 03030272A2
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
sealing
cap
dam
spacer particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2002/010963
Other languages
English (en)
Other versions
WO2003030272A3 (fr
Inventor
Ewald Karl Michael Guenther
Soo Jin Chua
Mark Dai Joong Auch
Lim Shuang Fang
Bee Ling Low
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Institute of Materials Research and Engineering
Original Assignee
Osram Opto Semiconductors GmbH
Institute of Materials Research and Engineering
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/968,167 external-priority patent/US8344360B2/en
Application filed by Osram Opto Semiconductors GmbH, Institute of Materials Research and Engineering filed Critical Osram Opto Semiconductors GmbH
Priority to JP2003533357A priority Critical patent/JP2005505114A/ja
Priority to EP02772353A priority patent/EP1430550A2/fr
Publication of WO2003030272A2 publication Critical patent/WO2003030272A2/fr
Publication of WO2003030272A3 publication Critical patent/WO2003030272A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present invention relates to organic light emitting diode (OLED) devices. More particularly, the invention relates to encapsulation of OLED devices.
  • OLED organic light emitting diode
  • Fig. 1 shows a conventional OLED device 100.
  • OLED devices can be used as displays in various consumer electronic products, including cellular phones, cellular smart phones, personal organizers, pagers, advertising panel, touch screen displays, teleconferencing equipment, multimedia equipment, virtual reality products, and display kiosks.
  • the conventional OLED device comprises a functional stack of one or more organic functional layers 110 between a transparent conductive layer 105 and a conductive layer 115.
  • the functional stack is formed on a transparent substrate 101.
  • the conductive layers can be patterned to form one or more cells or pixels on the substrate.
  • Bond pads 150 are coupled to the cathodes and anodes to control the OLED pixels.
  • charge carriers are injected through the cathodes and anodes for recombination in the functional layers. The recombination of the charge carriers causes the functional layer to emit visible radiation.
  • a cap 160 which forms a cavity 145 between it and the pixels, is mounted on the substrate.
  • a sealant 187 is applied around the edges of the cap where it contacts the substrate.
  • the sealing width W needs to be sufficiently wide to prevent oxygen and moisture from permeating through the sealant.
  • the sealing width is about 0.2-2 mm with a gap of about 0.01-0.5 mm.
  • Such a large sealing width results in inefficient use of chip area, limiting miniaturization of OLED devices.
  • the invention relates generally to OLED devices.
  • the invention relates to the encapsulation of OLED devices.
  • a sealing dam surrounding the cell region of the substrate is provided.
  • the sealing dam supports the cap on the substrate and provides a sealing region located at an outer face of the sealing dam.
  • the sealing region is located between the edge of the cap and dam in which an adhesive is applied to seal the OLED device.
  • the use of the sealing dam determines the gap between the cap and substrate (thereby providing a cavity space between the diode and the cap for mechanical protection) and the sealing widths.
  • spacer particles are provided in the device region to prevent the cap from contacting the OLED cells.
  • the spacer particles are randomly deposited on the substrate by spraying techniques.
  • the spacer particles are deposited, for example, by a dry spray technique.
  • a wet spray technique is employed to deposit the spacer particles on the substrate.
  • Spacer particles in the non-device region are removed, leaving the spacer particles randomly distributed in the device region.
  • a cap is mounted on the substrate to encapsulate the device. The spacer particles in the device region prevent the cap from contacting the OLED cells.
  • Fig. 1 shows a conventional OLED device
  • Fig. 2 shows an embodiment of the invention
  • Figs. 3-8 show a process for fabricating an OLED device in accordance with one embodiment of the invention.
  • the OLED device comprises a substrate 201 on which pixels are formed.
  • the substrate comprises a transparent substrate, such as glass.
  • Other types of transparent materials that serve as a substrate to support the OLED pixels are useful.
  • the OLED pixels comprise one or more organic layers 110 sandwiched between cathodes 105 and anodes 115.
  • the cathodes and anodes are formed as strips in respective first and second directions. Typically, the first and second directions are orthogonal to each other.
  • the OLED pixels are formed in the cell region of the substrate. Bond pads 150 are electrically coupled to the cathodes and anodes.
  • a cap 260 is provided to encapsulate the OLED pixels.
  • the cap provides a cavity 145, separating the cap from the OLED cells.
  • spacer particles 680 are provided between the OLED cells and the cap. The spacer particles prevent the cap from contacting the OLED cells .
  • a sealing dam 280 is provided on the periphery of the cell region of the OLED device to support the cap. The height of the sealing dam defines the cavity 145.
  • the sealing dam comprises a non-conductive material to prevent shorting of the electrodes.
  • a multi-layered sealing dam in which at least the layer in contact with the substrate comprises a non-conductive material can also be used.
  • the sealing dam forms a sealing space or region 285, which abuts an outer face 281 of the sealing dam.
  • the sealing dam is located a distance from the edge of the cap, leaving a sealing space 285 between the edge of the cap and the dam.
  • a sealant 287 fills the sealing space, hermetically sealing the device.
  • the use of a sealing dam advantageously eliminates the gap (gap G in Fig. 1) that exists in conventional encapsulations. This enables devices formed with narrower sealing widths, for example, ⁇ l mm. In one embodiment, the sealing width is from about 0.2 to less than 1 mm.
  • spacer particles 680 are deposited on the device region to prevent the cap from contacting the OLED cells.
  • the spacer particles comprise a spherical shape. Spacer particles having other geometric shapes, such as cubical, prism, pyramidal, or other regular or irregular shapes are also useful .
  • the average mean diameter of the spacer particles should be sufficient to maintain the desired height of the cavity, which for example is about 2 - 50
  • the size and shape distribution of the spacer particles should also be sufficiently narrow to ensure proper separation between the cap and OLED cells.
  • Figs. 3-8 show a process for fabricating an OLED device in accordance with one embodiment of the invention.
  • a substrate 360 which serves as an encapsulation cap, is provided.
  • the substrate can comprise various types of materials, such as metal or polymer.
  • the thickness of the substrate can be, for example, 0.4-2 mm. Providing a thin substrate (0.01-0.2 mm) is also useful, particularly for fabricating flexible devices.
  • a device layer 380 from which the sealing dam is formed is deposited on a major surface of the cap.
  • the device layer comprises a non- conductive photosensitive material, such as photoresist. Due to the fine geometry, the dam materials must either be directly or indirectly patternable. Other electrically insulating photosensitive materials, such as photopatternable polyimide, photopatternable polybenzoxazole, photopatternable polyglutarimide and other resins, are also useful.
  • the height of the dam e.g. 1 urn
  • the device layer is patterned to form a sealing dam 280.
  • the patterning process includes, for example, selectively exposing the resist layer followed by a development process to remove the selected portions (i.e., exposed or unexposed portions are removed depending on the use of a positive or negative resist layer) .
  • the sealing dam is formed a distance from the edge of the substrate 260, leaving a sealing region 285. Typically the sealing region is about 0.2-2 mm wide.
  • the dam and substrate form a cap 260 to encapsulate the OLED device.
  • non-photosensitive materials that are non-conductive, such as spin-on glass, polyimide, polybenzoxazole, polyglutarimide, or benzocyclobutene, can be used to serve as the sealing dam layer.
  • non-photosensitive materials such as polymers, including polyethylene, polystyrene, polypropylene or inorganic materials such as silicon oxide, silicon nitride, aluminum oxide are also useful.
  • an etch mask such as resist, is provided for patterning the device layer .
  • multiple layers are used to form a sealing dam stack. At least the upper most layer which contacts the OLED substrate comprises a non- conductive material. The layers are patterned using, for example, an etch mask to form the sealing dam.
  • a substrate 501 is provided on which OLED cell or cells are formed.
  • the substrate can comprise various types of materials, such as glass or polymer. Other materials which can adequately support the OLED cells are also useful.
  • the substrate comprises a flexible material, such as a plastic film for forming a flexible device.
  • a flexible material such as a plastic film for forming a flexible device.
  • films for example, include transparent poly (ethylene terephthalate) (PET) , poly (butylene terephthalate) (PBT) , poly (enthylene naphthalate) (PEN), polycarbonate (PC), polyimides (PI), polysulfones (PSO) , and poly (p-phenylene ether sulfone) (PES) .
  • PET transparent poly
  • PBT poly (butylene terephthalate)
  • PEN poly (enthylene naphthalate)
  • PC polycarbonate
  • PI polyimides
  • PSO polysulfones
  • PES poly (p-phenylene ether sulfone)
  • PE polyethylene
  • PP polypropylene
  • PVC poly (vinyl chloride)
  • PS polystyrene
  • PMMA poly (methyl methyleacrylate)
  • a conductive layer 505 is deposited on the substrate.
  • the substrate can be provided with a barrier layer, such as silicon dioxide (Si0 2 ) , beneath the conductive layer on the substrate surface prior to depositing the conductive. Barrier layers are particularly useful for substrates comprising soda lime glass.
  • the barrier layer for example, is about 20 nm thick.
  • the conductive layer comprises a transparent conductive material, such as indium-tin-oxide (ITO) .
  • ITO indium-tin-oxide
  • Other types of transparent conductive layers including zinc-oxide and indium-zinc- oxide, are also useful.
  • Various techniques such as chemical vapor deposition (CVD) physical vapor deposition (PVD) , and plasma enhanced CVD (PECVD) , can be employed to form the device layer.
  • the conductive layer should be thin to reduce optical absorption and negative impact on subsequent film formation while satisfying electrical requirements .
  • the conductive layer should be thin to reduce optical absorption and negative impact on subsequent film formation while satisfying
  • the conductive layer 505 is patterned as desired to selectively remove portions of the layer, exposing portions 556 of the substrate.
  • the patterned conductive layer serves as first electrodes for the OLED cells.
  • the conductive layer is patterned to form strips that serve as, for example, anodes of a pixelated OLED device.
  • the patterning process can also form connections for bond pads.
  • Conventional techniques, such as photolithography and etching, can be used to pattern the conductive layer. Patterning techniques using a stamp are also useful . Such techniques are described in co-pending international patent application PCT/SG99/00074 titled "Mechanical Patterning of a Device Layer” , which is herein incorporated by reference for all purposes.
  • One or more organic functional layers 510 are formed on the substrate, covering the exposed substrate portions and conductive layer.
  • the functional organic layers comprise, for example, conjugated polymer or low molecular materials such as Alq 3 . Other types of functional organic layers are also useful.
  • the organic functional layers can be formed by conventional techniques, for example, wet processes such as spin coating or vacuum sublimation (for Alq3 organic layers) .
  • the thickness of the organic layers is typically about 2 - 200 nm.
  • portions of the organic layers can be selectively removed to expose underlying layers in regions 670 for bond pad connections. Selective removal of the organic layers can be achieved using, for example, a polishing process. Other techniques, such as etching, scratching, or laser ablation, are also useful.
  • spacer particles are randomly distributed on the substrate. Preferably, the spacer particles are randomly distributed in the cell region in which OLED cells are formed. The spacer particles occupy active and non-active parts (e.g., emitting and non-emitting areas) of the device. The distribution or density of the spacer particles should be sufficient to prevent the cap from contacting the OLED cells in the presence of mechanical stress, whether by designed (flexible devices) or accident (handling of the devices) . The distribution can be varied to accommodate design requirements, such as the thickness of the cap, thickness of the substrate, and amount of device flexibility needed.
  • the spacer distribution is sufficient to maintain the height of the cavity without visibly affecting the emission uniformity of the OLED cells.
  • a spacer distribution having an average distance between spacer particles of about 10 - 500 um is adequate in preventing the cap from contacting the OLED cells.
  • the density of the spacer particle distribution is about 10 - 1000 No/mm 2 . Such a distribution along with the small size of the spacer particles ensures that their influence on emission uniformity is essentially invisible to the unaided human eye.
  • the spacer particles preferably comprise a non- conductive material.
  • the spacer particles are made of glass. Spacer particles made of other types of non-conductive materials, such as silica, polymers, or ceramic, are also useful.
  • the spacer particles are deposited by spraying techniques.
  • a dry spray technique is employed to deposit the spacer particles . Dry spray techniques are described in, for example, Birenda Bahadur (Ed), Liquid Crystals: Applications and Uses, Vol. 1 (ISBN 9810201109), which is incorporated by reference for all purposes.
  • the area on which the dam is located is cleaned of spacer particles, using a laser cleaning method, or any other suitable method to remove the particles, like scratching or patterning with photoresist.
  • Dry spray techniques typically comprise electrostatically charging the spacer particles with a first polarity (positive or negative) and the substrate with a second polarity (negative or positive) .
  • the spacer particles are blown against the substrate with dry air supplied by a dry air sprayer. Dry air
  • a DISPA- ⁇ R from Nisshin Engineering Co.
  • Electrostatic attraction causes the spacer particles to adhere to the substrate while electrostatic repulsion between the particles prevents particle agglomeration on the substrate.
  • the use of a wet spray technique to deposit the spacer particles on the substrate is also useful.
  • Wet spray techniques are described in, for example, Birenda Bahadur (Ed), Liquid Crystals: Applications and Uses, Vol. 1 (ISBN 9810201109), which is already incorporated by reference for all purposes.
  • the spacer particles are suspended in an alcoholic or aqueous liquids, such as ethanol, isopropanol, or a mixture comprising alcohol and water.
  • the spacer concentration for example, is about 0.1-0.5% by weight.
  • Ultrasonic waves can be used to disperse the particles to prevent agglomeration.
  • the spacer particles can be irradiated with ultrasonic waves for several minutes prior to particle deposition.
  • the prepared suspension is sprayed with air through a nozzle onto the substrate, depositing the spacer particles thereon.
  • a second conductive layer 715 is deposited on the substrate, covering the spacer particles and other layers formed thereon.
  • the conductive layer comprises, for example, a metallic material such as Ca, Mg, Ba, Ag or a mixture or alloy thereof. Other conductive materials, particularly those which comprises a low work function, can also be used to form the second conductive layer.
  • the second conductive layer is patterned to form electrode strips that serve as cathode for a pixelated OLED device. Also, connections for bond pads can be formed during the patterning process.
  • the conductive layer can be selectively deposited to form cathode strips and bond pad connections. Selective deposition of the conductive layer can be achieved with, for example, mask layers.
  • the cathode strips are typically orthogonal to the anode strips. Forming cathode strips that are diagonal to the anode strips is also useful. The intersections of the top and bottom electrode strips form organic LED pixels.
  • the cap 260 is mounted on the substrate with the OLED pixels, aligning the sealing dam to surround the cell region of the OLED device.
  • sealant 287 is applied on the substrate around the cap.
  • the sealant for example, comprises uv-curable epoxy. Other types of sealants such as heat curable epoxy or acrylates are also useful.
  • the sealant creeps in to fill the sealing region 285 between the cap and substrate.
  • the sealant for example, is cured (e.g., UV or thermal) , thus hermetically sealing the OLED device 200.
  • the cap creates a cavity 845, providing separation between it and the OLED cells.
  • the spacer particles may be pressed into the layers of the OLED cells.
  • the spacer particles provide support for the cap over the area of the OLED cells, preventing the cap from contacting the active components of the device when pressure is applied to the cap.
  • the process deposits the spacer particles after formation of the organic layers.
  • the spacer particles can alternatively be deposited at other points in the process flow.
  • the spacer particles can be deposited before the formation of the first conductive layer or before the formation of the organic layers. In effect, the spacer particles can be deposited at any point of the process prior to the formation of the second conductive layer.
  • the process forms a sealing dam on the cap, as described in Fig. 3-4.
  • the sealing dam can be formed on the substrate. The dam is formed after the formation of the first conductive layer, but before the formation of the organic functional layer and the deposition of spacer particles.

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Sealing Material Composition (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

L'invention concerne un boîtier pour un dispositif à diode électroluminescente organique (OLED). Ce boîtier comprend un barrage de scellement qui entoure la région cellulaire du dispositif à diode électroluminescente organique afin de supporter un capuchon. Des particules d'espacement sont situées de façon aléatoire dans la région cellulaire afin d'éviter que le capuchon n'entre en contact avec les composants actifs et de protéger ainsi ces derniers contre des dégâts éventuels. Le barrage de scellement forme, entre le bord du capuchon et le barrage, une région de scellement dans laquelle un adhésif est appliqué afin de sceller le dispositif à diode électroluminescente organique. L'avantage d'utiliser un barrage de scellement réside dans le fait qu'il permet d'obtenir des dispositifs à diode électroluminescente organique présentant des largeurs de scellement réduites.
PCT/EP2002/010963 1999-12-17 2002-09-30 Procede d'encapsulation de dispositifs electroniques Ceased WO2003030272A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003533357A JP2005505114A (ja) 1999-12-17 2002-09-30 電子装置のカプセル化のための方法
EP02772353A EP1430550A2 (fr) 1999-12-17 2002-09-30 Procede d'encapsulation de dispositifs electroniques

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/968,167 US8344360B2 (en) 1999-12-17 1999-12-17 Organic electronic devices with an encapsulation
US09/968,167 2001-09-28

Publications (2)

Publication Number Publication Date
WO2003030272A2 true WO2003030272A2 (fr) 2003-04-10
WO2003030272A3 WO2003030272A3 (fr) 2003-07-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/010963 Ceased WO2003030272A2 (fr) 1999-12-17 2002-09-30 Procede d'encapsulation de dispositifs electroniques

Country Status (5)

Country Link
EP (1) EP1430550A2 (fr)
JP (2) JP2005505114A (fr)
CN (1) CN100530755C (fr)
TW (1) TWI222839B (fr)
WO (1) WO2003030272A2 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7166007B2 (en) 1999-12-17 2007-01-23 Osram Opto Semiconductors Gmbh Encapsulation of electronic devices
DE102004049955B4 (de) * 2004-10-13 2008-12-04 Schott Ag Verfahren zur Herstellung eines optischen Bauelements, insbesondere einer OLED
JP2010027624A (ja) * 1999-12-17 2010-02-04 Osram Opto Semiconductors Gmbh 電子装置のカプセル化のための方法
US8344360B2 (en) 1999-12-17 2013-01-01 Osram Opto Semiconductor Gmbh Organic electronic devices with an encapsulation
JP2015156025A (ja) * 2004-09-27 2015-08-27 クゥアルコム・メムス・テクノロジーズ・インコーポレイテッドＱＵＡＬＣＯＭＭ ＭＥＭＳ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． Ｍｅｍｓデバイスを実装するための方法及びシステム
US20160247981A1 (en) * 2015-02-25 2016-08-25 Innolux Corporation Display device and manufacturing method of the same
US11075357B2 (en) 2012-03-16 2021-07-27 Universal Display Corporation Edge barrier film for electronic devices
US11793018B2 (en) 2019-06-14 2023-10-17 Boe Technology Group Co., Ltd. OLED packaging structure and packaging method, and display apparatus
US12224215B2 (en) 2020-09-11 2025-02-11 Chengdu Boe Optoelectronics Technology Co., Ltd. Display device and bonding detection method of display device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796618B1 (ko) * 2007-01-04 2008-01-22 삼성에스디아이 주식회사 유기전계발광표시장치 및 그의 제조방법
KR100924137B1 (ko) 2008-01-31 2009-10-29 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
KR101589754B1 (ko) * 2009-10-13 2016-01-28 엘지디스플레이 주식회사 유기전계발광표시장치와 이의 제조방법
CN101859880B (zh) * 2010-05-06 2012-10-03 友达光电股份有限公司 电致发光显示装置及其制备方法
KR20120138307A (ko) 2011-06-14 2012-12-26 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN104505469B (zh) * 2015-01-04 2017-04-05 京东方科技集团股份有限公司 一种有机发光二极管显示基板及其封装方法
CN105990373B (zh) * 2015-02-25 2019-04-12 群创光电股份有限公司 显示装置及其制造方法
US20240407229A1 (en) * 2021-12-20 2024-12-05 Sharp Display Technology Corporation Display device
CN117202726B (zh) * 2023-09-13 2024-10-01 绵阳惠科光电科技有限公司 显示面板及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61234161A (ja) * 1985-04-10 1986-10-18 Matsushita Electric Ind Co Ltd 密着型イメ−ジセンサ
JPS62188092U (fr) * 1986-05-21 1987-11-30
JP4114895B2 (ja) * 1998-07-08 2008-07-09 Ｔｄｋ株式会社 有機ｅｌ表示装置
JP2000040586A (ja) * 1998-07-21 2000-02-08 Tdk Corp 有機ｅｌ素子モジュール
JP4246830B2 (ja) * 1999-01-14 2009-04-02 Ｔｄｋ株式会社 有機ｅｌ素子
US6383664B2 (en) * 1999-05-11 2002-05-07 The Dow Chemical Company Electroluminescent or photocell device having protective packaging
EP1238306B1 (fr) * 1999-12-17 2007-05-09 Osram Opto Semiconductors GmbH Dispositif perfectionne a diodes electroluminescentes
TWI222839B (en) * 1999-12-17 2004-10-21 Osram Opto Semiconductors Gmbh Method for encapsulation of electronic devices
ATE241253T1 (de) * 1999-12-17 2003-06-15 Osram Opto Semiconductors Gmbh Kapselung für organische leds
WO2001044865A1 (fr) * 1999-12-17 2001-06-21 Osram Opto Semiconductors Gmbh Encapsulation perfectionnee de dispositif a d.e.l. organique
JP4608182B2 (ja) * 2000-09-06 2011-01-05 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Ｏｌｅｄデバイスのカプセル化

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7166007B2 (en) 1999-12-17 2007-01-23 Osram Opto Semiconductors Gmbh Encapsulation of electronic devices
US7394153B2 (en) 1999-12-17 2008-07-01 Osram Opto Semiconductors Gmbh Encapsulation of electronic devices
US7419842B2 (en) 1999-12-17 2008-09-02 Osram Gmbh Encapsulation of electroluminescent devices with shaped spacers
US7432533B2 (en) 1999-12-17 2008-10-07 Osram Gmbh Encapsulation of electronic devices with shaped spacers
JP2010027624A (ja) * 1999-12-17 2010-02-04 Osram Opto Semiconductors Gmbh 電子装置のカプセル化のための方法
US8344360B2 (en) 1999-12-17 2013-01-01 Osram Opto Semiconductor Gmbh Organic electronic devices with an encapsulation
JP2015156025A (ja) * 2004-09-27 2015-08-27 クゥアルコム・メムス・テクノロジーズ・インコーポレイテッドＱＵＡＬＣＯＭＭ ＭＥＭＳ Ｔｅｃｈｎｏｌｏｇｉｅｓ， Ｉｎｃ． Ｍｅｍｓデバイスを実装するための方法及びシステム
DE102004049955B4 (de) * 2004-10-13 2008-12-04 Schott Ag Verfahren zur Herstellung eines optischen Bauelements, insbesondere einer OLED
US11075357B2 (en) 2012-03-16 2021-07-27 Universal Display Corporation Edge barrier film for electronic devices
US20160247981A1 (en) * 2015-02-25 2016-08-25 Innolux Corporation Display device and manufacturing method of the same
US11793018B2 (en) 2019-06-14 2023-10-17 Boe Technology Group Co., Ltd. OLED packaging structure and packaging method, and display apparatus
US12224215B2 (en) 2020-09-11 2025-02-11 Chengdu Boe Optoelectronics Technology Co., Ltd. Display device and bonding detection method of display device

Also Published As

Publication number Publication date
CN100530755C (zh) 2009-08-19
CN1557028A (zh) 2004-12-22
WO2003030272A3 (fr) 2003-07-17
JP2005505114A (ja) 2005-02-17
TWI222839B (en) 2004-10-21
EP1430550A2 (fr) 2004-06-23
JP2010027624A (ja) 2010-02-04

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