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WO2003016590A3 - Vorrichtung zur zufuhr von gasgemischen zu einem cvd-reaktor - Google Patents

Vorrichtung zur zufuhr von gasgemischen zu einem cvd-reaktor Download PDF

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Publication number
WO2003016590A3
WO2003016590A3 PCT/DE2002/002592 DE0202592W WO03016590A3 WO 2003016590 A3 WO2003016590 A3 WO 2003016590A3 DE 0202592 W DE0202592 W DE 0202592W WO 03016590 A3 WO03016590 A3 WO 03016590A3
Authority
WO
WIPO (PCT)
Prior art keywords
supply line
cvd reactor
supplying gas
gas mixtures
carrier gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/002592
Other languages
English (en)
French (fr)
Other versions
WO2003016590A2 (de
Inventor
Rudolf Kogler
Helmut Schoenherr
Silke Skrabl
Rolf Urschitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of WO2003016590A2 publication Critical patent/WO2003016590A2/de
Publication of WO2003016590A3 publication Critical patent/WO2003016590A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)

Abstract

Die Erfindung betrifft eine Vorrichtung mit einem Zuleitungszweig (Z1) für ein Gasgemisch aus einem zerstäubten Medium (M1) und einem Trägergas (T) zu einem CVD-Reaktor (R). Der Zuleitungszweig (Z1) umfasst eine Zuleitung für das flüssige Medium (M1), eine Zuleitung für das Trägergas (T) und eine von den Zuleitungen gespeiste Aufbereitungseinheit zur Überführung des flüssigen Mediums (M1) mittels eines Einspritzventils (EV1) in den gasförmigen Zustand und zur Mischung des Mediums (M1) mit dem Trägergas (T). Die Zuleitungen weisen jeweils eine Durchflusssteuerungseinheit (DS11, DS12) auf.
PCT/DE2002/002592 2001-08-01 2002-07-15 Vorrichtung zur zufuhr von gasgemischen zu einem cvd-reaktor Ceased WO2003016590A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10137673.1 2001-08-01
DE2001137673 DE10137673A1 (de) 2001-08-01 2001-08-01 Vorrichtung zur Zufuhr von Gasgemischen zu einem CVD-Reaktor

Publications (2)

Publication Number Publication Date
WO2003016590A2 WO2003016590A2 (de) 2003-02-27
WO2003016590A3 true WO2003016590A3 (de) 2003-05-30

Family

ID=7693981

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002592 Ceased WO2003016590A2 (de) 2001-08-01 2002-07-15 Vorrichtung zur zufuhr von gasgemischen zu einem cvd-reaktor

Country Status (2)

Country Link
DE (1) DE10137673A1 (de)
WO (1) WO2003016590A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10337568A1 (de) * 2003-08-14 2005-03-17 Infineon Technologies Ag Gasversorgungsanordnung, insbesondere für einen CVD-Prozessreaktor zum Aufwachsen einer Epitaxieschicht
DE10345824A1 (de) * 2003-09-30 2005-05-04 Infineon Technologies Ag Anordnung zur Abscheidung von atomaren Schichten auf Substraten
US20090214777A1 (en) * 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
CN110016657B (zh) * 2018-01-08 2020-06-19 北京北方华创微电子装备有限公司 流量控制方法及装置、反应腔室

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968588A (en) * 1997-03-17 1999-10-19 Applied Materials, Inc. In-situ liquid flow rate estimation and verification by sonic flow method
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
US6179925B1 (en) * 1999-05-14 2001-01-30 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in substrate processing system
US6244575B1 (en) * 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
EP1113089A1 (de) * 1999-12-30 2001-07-04 Applied Materials, Inc. OMCVD zum Niederschlagen von Blei-Zirkonate-Titanate Schichten
EP1122335A1 (de) * 2000-02-01 2001-08-08 Applied Materials, Inc. Verfahren und Vorrichtung zur Verdampfung von Flüssigkeiten

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291040A (ja) * 1992-03-03 1994-10-18 Rintetsuku:Kk 液体気化供給方法と液体気化供給器
JP3122311B2 (ja) * 1994-06-29 2001-01-09 東京エレクトロン株式会社 成膜処理室への液体材料供給装置及びその使用方法
AU9507298A (en) * 1997-09-26 1999-04-23 Advanced Technology Materials, Inc. Liquid reagent delivery system
KR100273474B1 (ko) * 1998-09-14 2000-12-15 이경수 화학기상 증착장치의 가스 공급장치와 그 제어방법
JP4230596B2 (ja) * 1999-03-12 2009-02-25 東京エレクトロン株式会社 薄膜形成方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110531A (en) * 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US6244575B1 (en) * 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
US5968588A (en) * 1997-03-17 1999-10-19 Applied Materials, Inc. In-situ liquid flow rate estimation and verification by sonic flow method
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
US6179925B1 (en) * 1999-05-14 2001-01-30 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in substrate processing system
EP1113089A1 (de) * 1999-12-30 2001-07-04 Applied Materials, Inc. OMCVD zum Niederschlagen von Blei-Zirkonate-Titanate Schichten
EP1122335A1 (de) * 2000-02-01 2001-08-08 Applied Materials, Inc. Verfahren und Vorrichtung zur Verdampfung von Flüssigkeiten

Also Published As

Publication number Publication date
DE10137673A1 (de) 2003-02-27
WO2003016590A2 (de) 2003-02-27

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