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WO2003015278A2 - Dispositif pour commander un element de commutation et procede pour le faire fonctionner - Google Patents

Dispositif pour commander un element de commutation et procede pour le faire fonctionner Download PDF

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Publication number
WO2003015278A2
WO2003015278A2 PCT/DE2002/002762 DE0202762W WO03015278A2 WO 2003015278 A2 WO2003015278 A2 WO 2003015278A2 DE 0202762 W DE0202762 W DE 0202762W WO 03015278 A2 WO03015278 A2 WO 03015278A2
Authority
WO
WIPO (PCT)
Prior art keywords
current
value
switching element
voltage
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/002762
Other languages
German (de)
English (en)
Other versions
WO2003015278A3 (fr
Inventor
Cyrille Brando
Mark Elliott
Johann Falter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2003015278A2 publication Critical patent/WO2003015278A2/fr
Publication of WO2003015278A3 publication Critical patent/WO2003015278A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching

Definitions

  • the invention relates to a device for controlling a switching element, such as a power output stage, and a corresponding operating method according to the preamble of claim 12.
  • DE 198 55 604 Cl discloses a method for controlling a power output stage, which leads to a reduction in the electromagnetic interference during switching.
  • the power output stage is activated in succession with different current values during a switching process. For example, at the beginning of a switching operation, control takes place with a relatively large control current in order to achieve the desired switching speed. This is then followed by control with a lower current value in order to limit the rate of change (slew rate) at the output of the power output stage and thus also the electromagnetic interference.
  • the dimensioning of the two in succession during a switching operation Current values for controlling the power output stage take place within the framework of a compromise between the goal of the highest possible switching speed on the one hand and the goal of the lowest possible electromagnetic interference on the other hand.
  • a disadvantage of the known control method for a power output stage described above is, on the one hand, that it neglects the fact that current and voltage in an inductive consumer are not in phase, so that the rate of change in voltage can deviate from the rate of change in current. It would therefore be desirable to be able to set both the rate of change in voltage and the rate of change in current when driving the power output stage.
  • Another disadvantage of the known control method for a power output stage described above is that the successive control with only two current values during each switching process enables a relatively good compromise between the desired switching speed on the one hand and the desired prevention of electromagnetic interference on the other hand, but in stationary final state of the switching element after completion of the respective switching process leads to a possibly unsatisfactory volume or blocking resistance.
  • the invention is therefore based on the object of improving the known control method described above in such a way that the rates of change in the current and the voltage can be influenced separately and, moreover, the lowest possible contact resistance or the greatest possible blocking resistance is achieved after a switching operation.
  • the invention is based on the known control methods for a power output stage described above according to the preamble of claim 1, solved by the characterizing features of claim 1.
  • the invention includes the general technical teaching, e- lekt ⁇ sches a switching element such as a power amplifier ⁇ respectively during a switching operation successively with at least three different control signals to control.
  • the control signals are current signals m t different current values which, for example, specify the gate-charge current of a MOSFET transistor.
  • the switching element is thus in each case activated in succession with at least three different current values during a switching operation, preferably four different current values following one another during a switching operation.
  • the first current value is preferably relatively large in order to achieve the fastest possible switching speed.
  • the second current value is preferably relatively small and determines the rate of change (slew rate) of the current, while the third current value preferably determines the rate of change (slew rate) of the voltage.
  • the second current value is preferably smaller than the third current value, whereas when the device is switched off, the second current value is preferably larger than the third current value.
  • the switching element is preferably actuated with a fourth current value during a switching operation, the fourth current value preferably being greater in magnitude than the preceding current values in order to achieve the lowest possible contact resistance or the greatest possible blocking resistance after a switching operation.
  • Each switching operation of the switching element is thus divided into at least three in the control method according to the invention Phases in which the switching element is controlled with different control signals or current values.
  • the change between the individual phases can take place in a time-controlled manner during a switching process, in that each phase has a predetermined period of time.
  • the change between the individual phases takes place during a switching operation, however, as a function of the measured progress of the switching operation.
  • the current flowing through the switching element can be measured, which already changes during a switching process, so that the current value of the current flowing through the switching element contains information about the progress of the switching process.
  • the voltage present at the output of the switching element which also changes during a switching operation, so that the current value of the voltage at the output of the switching element also contains information about the progress of the switching operation.
  • the current and voltage at the output of the switching element in an inductive consumer with a free-wheeling diode are not in phase, but are out of phase with one another. In the preferred embodiment, therefore, both the current flowing through the switching element and the voltage at the output of the switching element are measured in order to be able to derive information about the progress of the switching state from these two measurement signals.
  • the determination of the progress of the switching process from the measurement signals determined during the switching process is preferably carried out by comparison with one or more predetermined threshold values.
  • the current flowing through the switching element is preferably during the switching process preferably with a predetermined NEN current limit value compared, the control signal or the current value for controlling the switching element is changed when the current limit value is exceeded or fallen below.
  • FIG. 2 shows a time diagram to clarify the time profile of gate current, drain current and drain voltage in the arrangement shown in FIG. 1,
  • FIG. 3a-3c the control method according to the invention in the form of a flowchart, FIG. 3a showing the default settings, whereas FIG. 3b shows a switch-on process and FIG. 3c a switch-off process.
  • FIG. 1 in the form of a schematic block diagram is used to control an electric motor 1, it being possible to control the electric motor 1 with any polarity in order to enable operation in both directions of rotation.
  • the structural design of the circuit is first described below, in order to then explain the mode of operation of the circuit on the basis of the timing diagram shown in FIG. 2 and the flow diagram shown in FIGS. 3a to 3b.
  • the electric motor 1 has two connections, the first connection of the electric motor 1 being connected to a battery U BAT via a transistor T1 in the form of a MOSFET transistor, while the second connection of the electric motor 1 is connected to ground via a transistor T4 GND is connected.
  • the transistors T1 and T4 are switched through, the electric motor 1 is thus supplied with voltage and thus rotates in a predetermined first direction of rotation.
  • the first connection of the electric motor 1 is connected to ground GND via a transistor T3, while the second connection of the electric motor 1 is connected to the battery U BAT via a transistor T2.
  • the transistors T2 and T3 are switched on, the reverse polarity of the voltage is applied to the electric motor 1 and therefore rotates in a predetermined second direction of rotation.
  • the transistors T3 and T4 can be activated in a conventional manner and play no further role for the invention. However, it is also possible to also control the transistors T3 and T4 in the manner according to the invention.
  • circuit shown in FIG. 1 is constructed in mirror image, the circuit arrangement for controlling the transistor T1 being almost identical to the circuit arrangement for controlling the transistor T2.
  • the part of the circuit shown in FIG. 1, which is used to control the transistor T1 is described below, the part serving to control the transistor T2 the same reference numerals are used in each case.
  • circuit arrangement used to control the transistor T1 is implemented in PMOS technology, whereas the circuit arrangement for controlling the transistor T1 in NMOS technology is implemented, so that an additional charge pump 2 is required.
  • the gate input of the transistor T1 is connected to ground via a controllable current sink 3, the current sink 3 drawing a current during a switching-off process of the transistor T1, which current is specified by a control unit 4, as will be described in detail below.
  • the gate input of the transistor T1 is connected to a controllable current source 5, which drives a gate current during a switch-on process, which is specified by the control unit 4, as will also be described in detail.
  • the controllable current source 5 is connected to a voltage supply unit 6, which in turn is connected to ground GND.
  • the switching on or switching off of the transistor Tl is controlled by a logic unit 7, the control unit taking into account the current progress of the switching process, however.
  • a current sensor 8 is provided, which is only shown schematically and eats the electrical current I DRAIN flowing through the transistor T1 .
  • the current sensor 8 is connected to a comparator unit 9, which compares the current I DRAIN flowing through the transistor T1 with a predetermined current limit value I TH during a switching operation in order to determine the current progress of the switching operation.
  • the comparator unit 9 therefore outputs a status signal to the control unit 4, which indicates whether the current flowing through the transistor T1 is above or below the current limit value I TH .
  • a voltage sensor 10 is also provided, which detects the source voltage at the output of transistor Tl, i.e. between the transistor T1 and the electric motor 1.
  • the voltage sensor 10 On the output side, the voltage sensor 10 is connected to a comparator unit 11, which compares the measured source voltage of the transistor T1 with two predetermined voltage limit values U THI and U TH2 . On the output side there is the
  • Comparator unit 11 sends a status signal to control unit 4, which indicates whether the source voltage of the transistor is above or below the two voltage limit values U TH ⁇ and U TH2 .
  • control unit 4 controls the controllable current source 5 or the controllable current sink 3 such that the desired gate current for the transistor T1 is set.
  • the mode of operation of the circuit according to the invention will now be described with reference to the time diagram shown in FIG. 2 and the flow diagram shown in FIGS. 3a to 3b.
  • the time diagram in FIG. 2 thus shows a switching operation of the transistor T1 on and off.
  • the switching times of the transistor are short compared to the time constant of the load.
  • the diagram shows an switching process of the transistor T1 and between the times te and tio a switching process of the transistor T1, while the transistor T4 is switched on statically.
  • the transistor Tl turned on the other hand, while the transistor Tl from the time tio is overall blocks.
  • FIG. 2 shows the time profile of the gate current of the transistor T1 at the top, wherein it can be seen that each switching operation is divided into four phases with different gate currents.
  • the gate current In the first phase of the switch-on process between times ti and t 2 , the gate current initially assumes a relatively large value I S ⁇ in order to achieve the fastest possible switching speed. In the second phase of the switch-on process between times t 2 and t, the gate current then decreases to a relatively small value I A in order to limit the rate of change (slew rate) of the output current. In the third phase of the switch-on process between times t 3 and t, the gate current then increases again to a somewhat larger value I B , the value I B determining the rate of change (slew rate) of the output voltage.
  • Closing lent takes the gate current for the transistor Tl in the fourth phase of the switching-on between the time points t and t 5 to a relatively large value I CPI, which current value I CP1 is sufficiently large to turn on transistor fully constantlybericht Kunststoffn and thereby to achieve the lowest possible volume resistance after completion of the switching process.
  • I CPI current value
  • I CP1 current value
  • I CP1 is sufficiently large to turn on transistor fully constantlybericht Kunststoffn and thereby to achieve the lowest possible volume resistance after completion of the switching process.
  • the individual phases of the switching-off process of the transistor Tl between the times t 6 and tio are now described below, the following details relating in each case to an inverse polarity of the gate current.
  • the gate current In the first phase of the switch-off process between times t 6 and t 7 , the gate current initially assumes a relatively large value I s2 in order to achieve the highest possible switching speed.
  • the gate current then drops to a smaller value I B , this value determining the change values (slew rate) of the output voltage of the transistor T1.
  • the gate current then drops to an even smaller value I A , this value I A determining the rate of change (slew rate) of the drain current of transistor Tl .
  • the gate current of the transistor Tl then finally takes on a relatively large value I C p 2 again in order to control the transistor Tl as completely as possible and thereby as large as possible after the end of the switch-off process To achieve blocking resistance.
  • the change from the first phase of the switch-on process to the second phase of the switch-on process takes place when the drain current I RAIN exceeds the predefined current limit value I TH , which is the case at time t 2 in the example shown.
  • the change from the second phase of the switch-on process to the third phase of the switch-on process takes place when the source voltage of the transistor T1 exceeds the predetermined first voltage limit value U TH ⁇ . steps, which is the case here at time t 3 .
  • the change from the third to the fourth phase of the switch-on process takes place when the source voltage U SO UR CE of the transistor Tl exceeds the predetermined second voltage limit value U TH2 .
  • Transistor Tl falls below the predetermined second voltage limit value U TH2 , which is the case here at time t.
  • the change from the second phase to the third phase of the switch-off process takes place, however, when the source voltage U SOURCE falls below the first voltage limit value U TH ⁇ , which is the case at time t 8 .
  • the change from the third to the fourth phase of the switch-off process takes place here at the time tg when the drain current I DRAIN falls below the predetermined current limit value I TH .
  • the gate current I sl is first determined for the first phase of the switch-on process, this current value influencing the switch-on duration and therefore being determined as a function of the desired switch-on duration T 0N .
  • the gate current I s2 for the first phase of the off switching process determined, this current value influences the switch-off time and is therefore determined depending on the desired switch-off time T 0 FF.
  • the gate current I A is determined for the second phase of the switch-on process and the third phase of the switch-off process, this current value I A influencing the rate of change (slew rate) for the source voltage of the transistor T1 and is therefore determined as a function of the maximum permissible rate of change SRU for the source voltage.
  • the gate current I B is determined for the third phase of the switch-on process and the second phase of the switch-off process, this current value I B influencing the rate of change (slew rate) of the source voltage and therefore as a function of the maximum permissible rate of change SRU of the source voltage is determined.
  • the gate current I CP1 is also determined for the fourth phase of the switch-on process, this value influencing the volume resistance of the transistor T1 after the switch-on process has ended and is therefore determined as a function of the desired volume resistance R D.
  • the gate current I CP2 is determined for the fourth phase of the switch-off process, this value influencing the blocking resistance R s of the transistor Tl after the switch-off process has ended and is therefore determined as a function of the desired blocking resistance.
  • FIG. 3b shows a switching-on process of the transistor T1.
  • the gate current I sl is thus maintained until the measured drain current IDRAIN of the transistor Tl exceeds the predetermined current limit value I TH , whereupon the gate Current I A is set for the second phase of the switch-on process.
  • This gate current I A is then maintained until the source voltage U SOU R C E of the transistor Tl exceeds the predetermined first voltage limit value U TH ⁇ , whereupon the gate current I B is then set for the third phase of the switch-on process becomes.
  • This value I B is then maintained until the source voltage U SOU RCE also exceeds the second predetermined voltage limit value U TH2 , whereupon the gate current I C p ⁇ is then set for the fourth phase of the switch-on process.
  • FIG. 3c which shows a switching-off process of the transistor T1
  • the gate current I s2 is initially set in the first phase of the switch-off process, this current value being maintained until the source voltage U SOURCE falls below the second voltage limit value U TH2 again, whereupon the current value I B for the second Phase of the switch-off process is set.
  • This current value I B is then maintained in the second phase of the switch-off process between times t 7 and t 8 until the source voltage U SOURCE also falls below the predetermined first voltage limit value U THI , whereupon the gate current then increases the predetermined current value I A is set for the third phase of the switch-off process.
  • This value I A for the gate current is maintained until the drain current I DR ⁇ IN of the transistor Tl falls below the predetermined current limit value I TH , whereupon the gate Current is set to the current value I C p 2 in order to control the transistor Tl as completely as possible.

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  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Keying Circuit Devices (AREA)

Abstract

La présente invention concerne un dispositif pour commander un élément de commutation (T1, T2) comprenant une source de signaux (3, 5), qui est connectée à l'entrée de commande dudit élément de commutation et est conçue pour produire un signal de commande, un organe de mesure (8, 10), qui est conçu pour détecter un signal de mesure reproduisant le courant ou la tension de sortie de l'élément de commutation, ainsi qu'un circuit de commande (4, 7), qui influence le signal de commande (IGATE) de la source de signaux lors d'un processus de commutation. Lors d'un processus de commutation, ladite source de signaux émet successivement, en fonction dudit signal de mesure, au moins trois signaux de commande différents.
PCT/DE2002/002762 2001-08-01 2002-07-26 Dispositif pour commander un element de commutation et procede pour le faire fonctionner Ceased WO2003015278A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2001137752 DE10137752C1 (de) 2001-08-01 2001-08-01 Vorrichtung zur Ansteuerung eines Schaltelements und zugehöriges Betriebsverfahren
DE10137752.5 2001-08-01

Publications (2)

Publication Number Publication Date
WO2003015278A2 true WO2003015278A2 (fr) 2003-02-20
WO2003015278A3 WO2003015278A3 (fr) 2003-08-28

Family

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PCT/DE2002/002762 Ceased WO2003015278A2 (fr) 2001-08-01 2002-07-26 Dispositif pour commander un element de commutation et procede pour le faire fonctionner

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WO (1) WO2003015278A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10355255A1 (de) * 2003-11-26 2005-07-07 Rexroth Indramat Gmbh Verfahren zur Ansteuerung eines Bipolartransistors mit isolierter Gate-Elektrode und Vorrichtung zur Durchführung des Verfahrens
DE102004036958A1 (de) * 2004-07-30 2006-03-23 Tridonicatco Gmbh & Co. Kg Ansteuerung von Leistungsschaltern
DE102004055358B3 (de) * 2004-11-05 2005-12-01 Dmos Gmbh Steuerschaltung und Verfahren zum Betreiben elektrischer Verbraucher
DE102013219167B4 (de) * 2013-04-26 2017-03-02 Conti Temic Microelectronic Gmbh Zwei Verfahren, Vorrichtung und Verwendung davon, jeweils zum Einschalten oder Abschalten eines elektronischen Bauelements
DE102022201644A1 (de) 2022-02-17 2023-08-17 Robert Bosch Gesellschaft mit beschränkter Haftung Kaskodenschaltung mit stromgeführtem Treiber

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1127409B1 (fr) * 1998-10-30 2014-04-23 Continental Automotive Systems US, Inc. Limitation combinee de la vitesse de montee du courant et de la tension
DE19855604C5 (de) * 1998-12-02 2004-04-15 Siemens Ag Verfahren und Vorrichtung zum Ansteuern einer Leistungsendstufe

Also Published As

Publication number Publication date
DE10137752C1 (de) 2002-12-12
WO2003015278A3 (fr) 2003-08-28

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