WO2003012178A1 - Crystal stacking substrate, crystal layer, device, and their manufacturing method - Google Patents

Abstract

A crystal stacking substrate, crystal layer, and device, and their manufacturing method which are preferable for the application to the manufacture of various kind of semiconductor devices. This crystal stacking substrate is manufactured by forming air voids (4) in a stripe or lattice form on the surface of a base substrate (1) such as a sapphire substrate, and by overlaying it with a semiconductor layer (2) such as a gallium nitride semiconductor layer under a condition that these air voids (4) cause no stacking. A liquid such as ethanol is infiltrated into these air voids (4), and the semiconductor layer (2) is separated from the base substrate (1) under an expansion pressure based on the thermal expansion or phase transfer of the liquid. This semiconductor layer (2) is used as a semiconductor substrate. The manufacture of a crystal layer or a crystal element layer by using a crystal stacking substrate makes it much easier to manufacture a crystal substrate such as a semiconductor substrate or a device such as a semiconductor device.

Description

 Crystal laminated substrate, crystal layer, element, and method of manufacturing them

Technical field

 INDUSTRIAL APPLICABILITY The present invention relates to a crystal laminated substrate, a crystal layer, an element, and a method for producing the same, and is suitably applied to the production of various semiconductor elements. Light

Background art

 Rice field

After a semiconductor layer is formed on a basic substrate, research and development have been conducted in which the basic substrate is removed from the semiconductor layer, and the semiconductor layer is used as a subsequent semiconductor substrate. Among them, there are many reports on the technology for separating the Si substrate as a basic substrate. For example, a technology has been proposed in which a silicon solar cell thin film semiconductor layer is formed on a Si substrate by CVD, the thin film semiconductor layer is peeled off from a basic substrate, and the Si substrate is reused. For example, in Japanese Patent Application Laid-Open No. Hei 8-2-136545, a porous Si layer is formed on a Si substrate, a semiconductor layer such as a solar cell is formed thereon, and adhesives are provided above and below the semiconductor layer. A method is shown in which the porous Si layer is mechanically broken by pulling the jig in the opposite direction, and the semiconductor layer is separated from the Si substrate. Also, Japanese Patent Application Laid-Open No. H10-15021 discloses a method of breaking and separating the porous Si layer by ultrasonic irradiation with the same structure. Also, in Japanese Patent Application Laid-Open No. Hei 10-1990, a plastic substrate is adhered on a solar cell layer with the same structure, and by cooling the plastic substrate, the heat between the plastic substrate and the Si substrate is reduced. A method is described in which the porous Si layer is broken and separated by shear stress based on the difference in shrinkage. Also, in Japanese Patent Application Laid-Open No. 2000-185757, a reticulated Si exposed surface is formed on an Si substrate on which an oxide layer is formed. From this, a technique of forming a reticulated solar cell by selective growth and separating it by a mechanical peeling method is disclosed.

 Next, a technique for separating a sapphire substrate from a gallium nitride semiconductor layer formed on the sapphire substrate has been developed. For example, a conventional technique for manufacturing a gallium nitride semiconductor substrate is to form a thick gallium nitride on a sapphire substrate by a chloride method and then scrape the sapphire substrate by a mechanical lapping method or a cutting method. There is a way. As another method, a substrate separation method using a chemical etching method has been proposed. For example, it has been proposed that a gallium nitride semiconductor is grown on a base substrate through a buffer layer made of an oxide such as zinc oxide (ZnO) or magnesium oxide (MgO) and the buffer layer is removed by etching. (See Japanese Patent Application Laid-Open Nos. Hei 7-165498, Hei 10-178202, and Hei 11-35797). In addition, it has been pointed out that the above chemical etching method requires a very long time to separate the base substrate and the semiconductor layer. As an improved technique of the etching method, etching between the base substrate and the semiconductor layer is considered. There has been proposed a method of providing a flow hole for the flow of the agent and significantly shortening the etching time (see Japanese Patent Application Laid-Open No. 2001-36939).

 However, it is difficult to remove the semiconductor layer from the base substrate with a high yield in the conventional technology. For example, the mechanical lapping method warps the substrate, making rubbing with a large area difficult is difficult and impractical.

The above-mentioned improved chemical etching method (Japanese Patent Application Laid-Open No. 2001-36939) is a technique for dramatically shortening the length of etching time, which is virtually impossible in the past. However, it has a disadvantage that a precise structure must be formed between the base substrate and the semiconductor layer. For example, a typical improved FIG. 1 shows the structure of the semiconductor laminated substrate by the etching separation method. The steps of manufacturing and separating the conventional semiconductor laminated substrate shown in FIG. 1 will be briefly described. First, an aluminum nitride (A1N) thin film layer 32 is formed as a separation layer on a base substrate 1 made of a sapphire substrate, and a gallium nitride (GaN) buffer layer 33 is grown thereon to about 2 m. Next, the nitride layer is formed in a stripe or island shape by a standard lithography process and gas etching. Next, an oxide is uniformly deposited by a CVD method, and vertical etching is performed by vapor phase plasma etching to form an oxide growth prevention film 34 on the side wall of the stripe-shaped or island-shaped nitride. Next, when a gallium nitride layer is deposited by M0 CVD or the chloride method, the gallium nitride layer is not deposited on the side wall due to the presence of the oxide growth preventing film 34, but is deposited only on the upper portion of the stripe while spreading laterally. Eventually, the stripes unite to form the gallium nitride semiconductor layer 2, the initial stripe covered with the oxide is preserved as it is, and the recess 4 on the stripe is formed as a flow hole.

 The steps for separating the base substrate 1 and the gallium nitride semiconductor layer 2 are as follows. First, an aqueous solution of hydrofluoric acid or the like is passed through the concave portions 4 on the stripes, and the growth preventing film 34 on the side walls is removed by etching. Next, after removing the hydrofluoric acid, an Al-based etching solution is passed through the concave portion 4 to etch the aluminum nitride thin film layer 32, whereby the basic substrate 1 is finally separated.

 As shown above, in the prior art, a number of CVD processes, lithography, and etching steps are repeatedly used to obtain a gallium nitride semiconductor layer. This has led to lower yields and higher manufacturing costs.

The present invention has been made in view of such a problem, and its purpose is to provide a simple Crystal substrate that can easily separate the base substrate from the crystal layer such as a semiconductor layer using the pressure of volume expansion based on thermal expansion or phase transition of a liquid, and a crystal such as a semiconductor layer obtained by using the substrate. It is an object of the present invention to provide devices such as layers and semiconductor devices and methods for their manufacture. Disclosure of the invention

 A crystal laminated substrate according to the present invention is a crystal laminated substrate in which a crystal layer is formed on a base substrate, wherein a liquid penetrates between the crystal layer and the base substrate, and the liquid undergoes thermal expansion or phase transition. Has a gap for separating the crystal layer and the base substrate by the expansion pressure based on the above, and the gap has a depth of 3 or more and a width of 3 m or more.

 In the crystal layer according to the present invention, a crystal layer is formed on a base substrate, and the liquid is caused to penetrate into the space of the crystal laminated substrate having a space for liquid to enter between the crystal layer and the base substrate, and the heat of the liquid is caused. It is separated from the base substrate by expansion pressure based on expansion or phase transition.

 In the device according to the present invention, a crystal element layer is formed on a base substrate, and the liquid is caused to enter the gap of the crystal laminated substrate having a gap for the liquid to enter between the crystal element layer and the base substrate. It is separated from the base substrate by expansion pressure based on thermal expansion or phase transition of the substrate.

 A method for manufacturing a crystal laminated substrate according to the present invention is a method for manufacturing a crystal laminated substrate in which a crystal layer is formed on a base substrate, wherein a liquid penetrates between the crystal layer and the base substrate, and the liquid The method includes a step of forming a gap for separating the crystal layer and the base substrate by an expansion pressure based on thermal expansion or phase transition.

In the method for producing a crystal layer according to the present invention, a crystal layer is formed on a base substrate, and a crystal laminated substrate having a gap between the crystal layer and the base substrate is formed. And a step of injecting a liquid into the void and separating the crystal layer and the base substrate by an expansion pressure based on thermal expansion or phase transition of the liquid.

 In the method for manufacturing an element according to the present invention, a crystal element layer is formed on a basic substrate, a crystal laminated substrate having a gap between the crystal element layer and the basic substrate is formed, and a liquid is caused to enter the gap. The method includes a step of separating the crystal element layer from the base substrate by an expansion pressure based on thermal expansion or phase transition of the liquid.

 In the present invention, the voids formed in the crystal-laminated substrate may be basically any shape as long as the shape allows a liquid to flow therethrough.For example, the voids may be linear, stripe-shaped, or lattice-shaped. These may be dispersed and formed. From the viewpoint of easily separating the crystal layer or the crystal element layer from the basic substrate, the gap is preferably selected to have a depth of 3 to 20 and a width of 3 to 20 μm. The gaps are typically formed periodically at a pitch of 6 or more and 40 im or less. In this case, the width of the gap and the width of the convex portion between them are selected, for example, to be substantially the same.

This gap can be formed as follows. That is, for example, a void can be formed by forming an uneven groove on the base substrate and using the fact that the crystal layer or the crystal element layer avoids lamination when forming a crystal layer or a crystal element layer thereon. Alternatively, after forming a crystal layer for forming voids on a flat base substrate, grooves of irregularities are cut in the crystal layer for forming voids, and when the target crystal layer is further laminated thereon, A gap can be formed even by utilizing the fact that a portion is prevented from being laminated. Further, after forming a crystal layer for forming voids on a flat base substrate, grooves of irregularities reaching the base substrate through the crystal layer for forming voids are cut, and furthermore, an objective is formed thereon. The gap can also be formed by utilizing the fact that the groove portion avoids the lamination when the crystal layers are laminated.

 The crystal layer or the crystal element layer is typically a semiconductor layer or a semiconductor element layer, but may be made of a material other than a semiconductor depending on the application. Similarly, the element is typically a semiconductor element, but may be other various elements.

 The base substrate may be made of any material necessary for forming a crystal layer or a crystal element layer thereon. Specifically, for example, when a nitride-based semiconductor layer is formed as a crystal layer, sapphire, silicon, spinel, neodymium gallate, lithium gallate, lithium aluminate, ΙΠ-V nitride, 、 -Group V compounds or silicon oxides can be used. Here, the nitride-based semiconductor layer is typically made of at least one group III material selected from the group consisting of gallium (Ga), aluminum (A1), boron (B), and indium (in). It is composed of a πι-ν group nitride semiconductor containing an element and at least a group V element containing nitrogen selected from the group consisting of nitrogen (N), phosphorus (P) and arsenic (As). Examples of the semiconductor layer other than the nitride-based semiconductor include a semiconductor layer made of silicon, germanium, or a mixed crystal thereof.

 When a semiconductor layer is used as the crystal layer, the semiconductor layer does not have to be doped with impurities.However, by doping a p-type impurity, an n-type impurity, or a transition metal in order to obtain a semi-insulating type, active The type of conduction can be controlled effectively.

When a semiconductor layer is formed, a device structure such as a field effect transistor, a bipolar transistor, a light receiving device, a light emitting diode or a semiconductor laser structure can be formed therein. It is an element layer. Water is the simplest liquid to penetrate or flow into the voids, but various mixed solutions can be used to adjust the phase transition temperature. Specifically, as the liquid, for example, at least one selected from the group consisting of water, alcohols, ketones, ethers, amines, petroleums and salts can be used. Can be an aqueous solution or water containing at least one of ethanol and methanol. Here, the solidification temperature can be lowered by adding ethanol or methanol to the water. In addition, from ketones, ethers, amines, petroleums, salts, and the like, the most suitable one can be selected for controlling the expansion coefficient and viscosity.

 The form of the phase transition is not a liquid-to-solid transition, but a liquid-to-gas transition due to temperature rise can be used.

 As the cooling medium causing the phase transition, for example, a cooling medium containing ethanol, methanol or a mixed liquid thereof, liquid nitrogen or liquid air may be used, or a cooling medium containing cooled nitrogen, oxygen or dry air may be used. May be used. If the latter cooled gas is blown, the cooling rate can be controlled for each location, and the separation process can be strictly controlled.

 If necessary, a part of the crystal laminated substrate may be covered with a heat shield to locally control the thermal expansion rate or the phase transition rate. In this way, the cooling rate can be controlled for each location, and the separation step can be strictly controlled.

In the crystal laminated substrate according to the present invention configured as described above, a liquid penetrates between a crystal layer or a crystal element layer and a base substrate, and is subjected to expansion pressure based on thermal expansion or phase transition of the liquid. Since there is a gap for separating the crystal layer or the crystal element layer from the base substrate, After the body penetrates or circulates, by changing the temperature of the crystal laminated substrate, the crystal layer or crystal element layer is separated from the base substrate by the expansion pressure based on the thermal expansion or phase transition of the liquid. Become. BRIEF DESCRIPTION OF THE FIGURES

 FIG. 1 is a cross-sectional view showing a configuration of a conventional semiconductor multilayer substrate, FIG. 2 is a cross-sectional view showing a configuration of a semiconductor multilayer substrate according to a first embodiment of the present invention, and FIG. FIG. 4 is a cross-sectional view illustrating a configuration of a semiconductor multilayer substrate according to a second embodiment; FIG. 4 is a cross-sectional view illustrating a configuration of a semiconductor multilayer substrate according to a third embodiment of the present invention; FIG. 4 is a cross-sectional view showing a configuration of a semiconductor laminated substrate according to the embodiment. BEST MODE FOR CARRYING OUT THE INVENTION

 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

 FIG. 2 is a sectional view of the semiconductor multilayer substrate according to the first embodiment of the present invention. In the figure, 1 is a base substrate made of a sapphire substrate, 2 is a gallium nitride semiconductor layer, 3 is a stripe-shaped projection formed on the base substrate 1, and has a depth of, for example, about 20 m and a stripe width. Is about 5 um, for example. Reference numeral 4 denotes a stripe-shaped concave portion formed on the basic substrate 1 and has a width of, for example, about 5 win. The semiconductor laminated substrate having such a configuration can be manufactured, for example, as follows.

First, for example, the C-plane sapphire substrate 1 is patterned by a known lithography technique and an ion milling method to form a stripe-shaped convex portion 3 .Next, a known nitrided buffer layer is formed at 550 ° C. by a known MOCVD method. At a temperature of 1080 ° C and a gallium nitride of 0.5 u m Laminate. For example, trimethylgallium (TMG) is used as a gallium raw material, ammonia (NH ₃ ) is used as a nitrogen raw material, and nitrogen and hydrogen are used as carrier gases. Next, 300 gm of gallium nitride is grown at 1000 ° C. by a known hydride method. For example, gallium chloride, which is a raw material for gallium, causes metal gallium to react with hydrochloric acid gas upstream of the furnace. As the nitrogen source, for example, ammonia gas is used. No impurity doping is performed here. By properly setting the growth conditions, gallium nitride grown from above the stripes grows while spreading in the horizontal direction, and coalesce to form a flat gallium nitride semiconductor layer 2, and voids, that is, stripe-shaped recesses 4 are formed thereunder. leave.

Next, the gallium nitride semiconductor layer 2 is separated from the base substrate 1 by the following steps. First, the semiconductor laminated substrate is placed in a container connected to a simple decompression device, and water is added. At this point, the semiconductor laminated substrate is separated from water. When the pressure is reduced to about 1 kPa or less, the semiconductor laminated substrate is immersed in water and then returned to the atmospheric pressure. By the above operation, water is filled into the stripe-shaped concave portions 4. Next, the semiconductor laminated substrate is immersed in ethanol cooled to about 110 ° C. to about 150 ° C. to solidify and expand water in the recess 4. The gallium nitride semiconductor layer 2 is dissociated from the bonding surface of the stripe due to the volume expansion of about 9% due to the solidification of water. The gallium nitride semiconductor layer separated from the base substrate 1 in this manner can be used for various applications as a gallium nitride substrate. Next, in a second embodiment of the present invention, as shown in FIG. 3, a semiconductor stripe 3 made of, for example, gallium nitride having a width of, for example, several 1 is formed by a known method, and then a thick gallium nitride semiconductor layer 2 is formed. By appropriately controlling the depth and width of the semiconductor stripe 31, the distance between the semiconductor stripes 31 is controlled. In the recess, the lamination is avoided when the gallium nitride semiconductor layer 2 is formed, and a void, that is, a stripe-shaped recess 4 is generated.

 Except for the above, unless otherwise contradicted, the description of the first embodiment holds.

 Further, in the third embodiment of the present invention, as shown in FIG. 4, when forming a semiconductor stripe 31 having a width of several meters, the semiconductor stripe 31 is dug down to the underlying base substrate 1 to form a deep stripe-shaped projection 3. I do.

 Except for the above, unless otherwise contradicted, the description of the first embodiment holds.

 Further, in the fourth embodiment of the present invention, as shown in FIG. 5, a gallium nitride semiconductor layer 1 b is formed on a base substrate 1 a such as a sapphire substrate as a base substrate 1. Digging down to a depth in the middle of b to form a semiconductor stripe 31 of a number;

 Except for the above, unless otherwise contradicted, the description of the first embodiment holds.

 Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above embodiments, and various modifications based on the technical idea of the present invention are possible.

As described above, according to the present invention, a crystal layer or a crystal element layer is formed on a base substrate, and a gap is formed between the crystal layer or the crystal element layer and the base substrate. By injecting the liquid into the void, the crystal layer or the crystal element layer can be easily separated by spontaneous expansion pressure due to thermal expansion or phase transition of the liquid. Therefore, by manufacturing a crystal layer or a crystal element layer using this crystal laminated substrate, it is possible to extremely easily manufacture a crystal substrate such as a semiconductor substrate or an element such as a semiconductor element. In addition, by using an aqueous solution or water containing at least one of ethanol and methanol as a liquid to be penetrated into the void, an expensive chemical such as a conventional etching liquid and having a concern about environmental load is used. Since it is not necessary, the manufacturing cost can be reduced and the environmental load can be significantly reduced.

 Also, by using a crystal layer made of a group III-V nitride semiconductor such as gallium nitride, a group V nitride semiconductor substrate such as a gallium nitride semiconductor substrate can be easily obtained, and a crystal layer can be formed thereon. The resulting semiconductor element has excellent heat dissipation properties, and has an effect that an excellent semiconductor element can be easily manufactured because the cleavage of the substrate can be utilized.

Claims

The scope of the claims 1. A crystal laminated substrate in which a crystal layer is formed on a base substrate, wherein a liquid enters between the crystal layer and the base substrate, and an expansion pressure based on thermal expansion or phase transition of the liquid. A gap for separating the crystal layer and the base substrate, wherein the gap has a depth of 3 m or more and a width of 3 or more.  2. The crystal laminated substrate according to claim 1, wherein the depth of the void is 3 m or more and 20 m or less and the width is 3 m or more and 201 m or less.  3. The crystal laminated substrate according to claim 2, wherein said voids are formed periodically at a pitch of 6 or more; 40; um or less.  4. The base substrate is made of sapphire, silicon, spinel, neodymium gallate, lithium gallate, lithium aluminate, III-V nitride, III-V semiconductor, or silicon oxide. 2. The crystal laminated substrate according to item 1.  5. The crystalline layer contains at least one group III element selected from the group consisting of gallium, aluminum, boron and indium, and at least nitrogen selected from the group consisting of nitrogen, phosphorus and arsenic. 2. The compound according to claim 1, wherein the nitride is made of a group III-V nitride containing a group III element. 6. The method according to claim 1, wherein the crystal layer is made of a semiconductor comprising at least one of silicon and germanium. 7. The voids are formed by forming concave and convex grooves on the base substrate, and when laminating the crystal layer thereon, the groove portions avoid lamination. 2. The crystal laminated substrate according to claim 1, wherein the substrate is formed. 8. The voids are formed by forming a crystal layer on the flat base substrate, and then forming an uneven groove in the crystal layer. When the crystal layer is further stacked on the crystal layer, the groove portion is stacked. 2. The crystal-stacked substrate according to claim 1, wherein the substrate is formed by excluding.  9. After forming a crystal layer on the flat base substrate, the voids are formed with concave and convex grooves extending through the crystal layer to the base substrate, and when the crystal layer is further laminated thereon, 2. The crystal laminated substrate according to claim 1, wherein said groove portion is formed by avoiding lamination.  10. The crystal laminated substrate according to claim 7, 8 or 9, wherein the voids are formed in a linear or lattice form.  11. The crystal according to claim 1, wherein the liquid contains at least one selected from the group consisting of water, alcohols, ketones, ethers, amines, petroleums and salts. Laminated substrate.  12. The crystal laminated substrate according to claim 1, wherein the liquid is an aqueous solution or water containing at least one of ethanol and methanol.  13 3. A crystal layer is formed on the base substrate, and the liquid penetrates into the space of the crystal laminated substrate having a space for liquid to enter between the crystal layer and the base substrate, and the liquid expands thermally. Alternatively, the crystal layer is separated from the base substrate by an expansion pressure based on a phase transition. 14. The crystalline layer comprises at least one element selected from the group consisting of gallium, aluminum, boron, and indium, and at least one element selected from the group consisting of nitrogen, phosphorus, and arsenic. Group V element containing nitrogen 14. The crystal layer according to claim 13, wherein the crystal layer is made of a Group V nitride containing:  15. The crystal layer according to claim 13, wherein the crystal layer is made of a semiconductor made of at least one of silicon and germanium.  16. A crystal element layer is formed on the base substrate, and the liquid penetrates into the gaps of the crystal laminated substrate having a gap for liquid to enter between the crystal element layer and the base substrate. An element which is separated from the base substrate by an expansion pressure based on thermal expansion or phase transition of a liquid.  17. A method for manufacturing a crystal laminated substrate in which a crystal layer is formed on a base substrate, wherein a liquid penetrates between the crystal layer and the base substrate and is based on thermal expansion or phase transition of the liquid. A method for manufacturing a crystal laminated substrate, comprising a step of forming a gap for separating the crystal layer and the base substrate by an expansion pressure.  18. The basic substrate is formed of sapphire, silicon, spinel, neodymium gallate, lithium gallate, lithium aluminate, III-V nitride, πι-ν semiconductor, or GaN. 18. The method for manufacturing a crystal laminated substrate according to item 17 above.  19. The crystalline layer comprises at least one Group III element selected from the group consisting of gallium, aluminum, boron and indium, and at least nitrogen selected from the group consisting of nitrogen, phosphorus and arsenic. 18. The method for producing a crystal multilayer substrate according to claim 17, comprising a group III-V nitride containing a group V element containing: 20. The method for manufacturing a crystal laminated substrate according to claim 17, wherein said crystal layer is made of a semiconductor made of at least one of silicon and germanium. 21. The void is formed by including a step of forming an uneven groove on the base substrate and, when laminating the crystal layer thereon, excluding the groove portion from laminating. The method for producing a crystal laminated substrate according to claim 17, wherein:  22. The gap is formed by forming a crystal layer on the flat base substrate, forming a concave and convex groove in the crystal layer, and further laminating the crystal layer thereon, thereby forming a portion of the groove. 18. The method for producing a crystal laminated substrate according to claim 17, wherein said method is formed by including a step of avoiding lamination.  23. The voids are formed by forming a crystal layer on the flat base substrate, and then forming an uneven groove extending through the crystal layer to the base substrate, and further laminating the crystal layer thereon. 18. The method for manufacturing a crystal laminated substrate according to claim 17, wherein the groove portion is formed by including a step of avoiding lamination when forming.  24. A step of forming a crystal layered substrate having a crystal layer formed on the base substrate and having a gap between the crystal layer and the base substrate; Separating the crystal layer and the base substrate by an expansion pressure based on a phase transition.  25. A step in which a crystal element layer is formed on a base substrate, a step of forming a crystal laminated substrate having a gap between the crystal element layer and the base substrate, and injecting a liquid into the gap, Separating the crystal layer and the base substrate by an expansion pressure based on thermal expansion or phase transition of the element. 26. Cooling medium containing ethanol, methanol or a mixed liquid thereof, or liquid nitrogen or liquid air as the cooling medium causing the phase transition 25. The method for producing a crystal layer according to claim 24, wherein a crystal is used.  27. The cooling medium according to claim 25, wherein a cooling medium containing ethanol, methanol, a mixed liquid thereof, liquid nitrogen, or liquid air is used as the cooling medium causing the phase transition. Manufacturing method of element.  28. The method for producing a crystal layer according to claim 24, wherein a cooling medium containing cooled nitrogen, oxygen or dry air is used as the cooling medium causing the phase transition.  29. The method according to claim 25, wherein a cooling medium containing cooled nitrogen, oxygen, or dry air is used as the cooling medium causing the phase transition.  30. The method according to claim 26 or 28, wherein a part of the crystal laminated substrate is covered with a heat shielding material, and a thermal expansion rate or a phase transition rate is locally controlled. A method for producing a crystal layer.  31. The method according to claim 27 or 29, wherein a part of the crystal laminated substrate is covered with a heat shielding material, and a thermal expansion rate or a phase transition rate is locally controlled. A method for manufacturing an element.