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WO2002037576A3 - Dispositif a semi-conducteur et son procede de production - Google Patents

Dispositif a semi-conducteur et son procede de production Download PDF

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Publication number
WO2002037576A3
WO2002037576A3 PCT/EP2001/012372 EP0112372W WO0237576A3 WO 2002037576 A3 WO2002037576 A3 WO 2002037576A3 EP 0112372 W EP0112372 W EP 0112372W WO 0237576 A3 WO0237576 A3 WO 0237576A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
carrier
producing
insulating
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2001/012372
Other languages
German (de)
English (en)
Other versions
WO2002037576A2 (fr
Inventor
Steffen Jaeger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to AU2002219062A priority Critical patent/AU2002219062A1/en
Priority to EP01993027A priority patent/EP1362379A2/fr
Publication of WO2002037576A2 publication Critical patent/WO2002037576A2/fr
Publication of WO2002037576A3 publication Critical patent/WO2002037576A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteur comprenant une structure stratifiée, constituée d'une couche de support (2), qui présente un matériau de support électroconducteur, d'une couche d'isolation (4), qui est constituée de matériau d'isolation électroisolant, est pourvue sur la couche de support (2) et contient des particules de semi-conducteur (1), et d'une couche de protection (6), qui présente au moins un matériau de protection électroconducteur et est pourvue sur la couche d'isolation (4). Chaque particule de semi-conducteur (1) touche aussi bien la couche de support (2) que la couche de protection (6) et forme au moins une jonction p-n (3, 5). Le matériau d'isolation est constitué d'au moins un composé à base d'oxyde métallique qui renferme au moins partiellement un oxyde du matériau de support. La présente invention concerne également des procédés de production dudit dispositif à semi-conducteur.
PCT/EP2001/012372 2000-10-25 2001-10-25 Dispositif a semi-conducteur et son procede de production Ceased WO2002037576A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2002219062A AU2002219062A1 (en) 2000-10-25 2001-10-25 Semiconductor device and method for producing the same
EP01993027A EP1362379A2 (fr) 2000-10-25 2001-10-25 Dispositif a semi-conducteur et son procede de production

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10052914A DE10052914A1 (de) 2000-10-25 2000-10-25 Halbleitereinrichtung und Verfahren zu deren Herstellung
DE10052914.3 2000-10-25

Publications (2)

Publication Number Publication Date
WO2002037576A2 WO2002037576A2 (fr) 2002-05-10
WO2002037576A3 true WO2002037576A3 (fr) 2002-10-03

Family

ID=7661031

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2001/012372 Ceased WO2002037576A2 (fr) 2000-10-25 2001-10-25 Dispositif a semi-conducteur et son procede de production

Country Status (4)

Country Link
EP (1) EP1362379A2 (fr)
AU (1) AU2002219062A1 (fr)
DE (1) DE10052914A1 (fr)
WO (1) WO2002037576A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003309938A (ja) * 2002-04-15 2003-10-31 Mitsubishi Electric Corp 宇宙太陽光発電システム、携行型小電力電子機器、受信アンテナ装置及び電力システム
EP1521309A1 (fr) * 2003-10-02 2005-04-06 Scheuten Glasgroep Connexion en série de cellules solaires comprenant des corps semiconducteurs intégrés, méthode de fabrication et module photovoltaique avec connexion en série
EP1521308A1 (fr) * 2003-10-02 2005-04-06 Scheuten Glasgroep Composant semiconducteur sphérique ou granulaire utilisé pour des cellules solaires et son procédé de fabrication; procédé de fabrication d'une cellule solaire avec ce composant semiconducteur et cellule solaire
DE102004055186B4 (de) * 2004-11-16 2012-07-19 Beck Energy Gmbh Photovoltaikmodul mit Submodulen
ATE510306T1 (de) 2005-02-18 2011-06-15 Clean Venture 21 Corp Matrixanordnung sphärischer solarzellen und ihr herstellungsverfahren
DE102007061977A1 (de) 2007-12-21 2009-06-25 Futech Gmbh Verfahren zur Herstellung von Halbleiterpartikeln, insbesondere aus Silizium
KR101976673B1 (ko) * 2017-12-19 2019-05-10 한국에너지기술연구원 실리콘 태양전지

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173494A (en) * 1977-02-14 1979-11-06 Jack S. Kilby Glass support light energy converter
JPS55158678A (en) * 1979-05-29 1980-12-10 Agency Of Ind Science & Technol Manufacture of solar cell
US4582588A (en) * 1984-09-04 1986-04-15 Texas Instruments Incorporated Method of anodizing and sealing aluminum
US5028546A (en) * 1989-07-31 1991-07-02 Texas Instruments Incorporated Method for manufacture of solar cell with foil contact point
JPH03228379A (ja) * 1990-02-02 1991-10-09 Mitsubishi Electric Corp 太陽電池用基板
JPH05270813A (ja) * 1992-03-23 1993-10-19 Kawasaki Steel Corp 多結晶シリコン基板の製造方法
US5419782A (en) * 1993-05-11 1995-05-30 Texas Instruments Incorporated Array of solar cells having an optically self-aligning, output-increasing, ambient-protecting coating
US5498576A (en) * 1994-07-22 1996-03-12 Texas Instruments Incorporated Method and apparatus for affixing spheres to a foil matrix
EP1102332A2 (fr) * 1999-11-17 2001-05-23 FUJI MACHINE Mfg. Co., Ltd. Panneau photovoltaique et sa méthode de fabrication

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3056467B2 (ja) * 1998-09-08 2000-06-26 有限会社デジタル・ウェーブ 半導体装置製造用基板、その製造方法、及び、光電変換装置、その製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4173494A (en) * 1977-02-14 1979-11-06 Jack S. Kilby Glass support light energy converter
JPS55158678A (en) * 1979-05-29 1980-12-10 Agency Of Ind Science & Technol Manufacture of solar cell
US4582588A (en) * 1984-09-04 1986-04-15 Texas Instruments Incorporated Method of anodizing and sealing aluminum
US5028546A (en) * 1989-07-31 1991-07-02 Texas Instruments Incorporated Method for manufacture of solar cell with foil contact point
JPH03228379A (ja) * 1990-02-02 1991-10-09 Mitsubishi Electric Corp 太陽電池用基板
JPH05270813A (ja) * 1992-03-23 1993-10-19 Kawasaki Steel Corp 多結晶シリコン基板の製造方法
US5419782A (en) * 1993-05-11 1995-05-30 Texas Instruments Incorporated Array of solar cells having an optically self-aligning, output-increasing, ambient-protecting coating
US5498576A (en) * 1994-07-22 1996-03-12 Texas Instruments Incorporated Method and apparatus for affixing spheres to a foil matrix
EP1102332A2 (fr) * 1999-11-17 2001-05-23 FUJI MACHINE Mfg. Co., Ltd. Panneau photovoltaique et sa méthode de fabrication

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 005, no. 030 (E - 047) 24 February 1981 (1981-02-24) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 004 (E - 1151) 8 January 1992 (1992-01-08) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 043 (C - 1156) 24 January 1994 (1994-01-24) *

Also Published As

Publication number Publication date
AU2002219062A1 (en) 2002-05-15
WO2002037576A2 (fr) 2002-05-10
EP1362379A2 (fr) 2003-11-19
DE10052914A1 (de) 2002-05-16

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