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WO2002019037A1 - Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof - Google Patents

Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof Download PDF

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Publication number
WO2002019037A1
WO2002019037A1 PCT/JP2001/007251 JP0107251W WO0219037A1 WO 2002019037 A1 WO2002019037 A1 WO 2002019037A1 JP 0107251 W JP0107251 W JP 0107251W WO 0219037 A1 WO0219037 A1 WO 0219037A1
Authority
WO
WIPO (PCT)
Prior art keywords
structural units
coating film
exposed
composition
general formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2001/007251
Other languages
English (en)
French (fr)
Inventor
Tatsuro Nagahara
Hideki Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clariant International Ltd
Original Assignee
Clariant International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000262703A external-priority patent/JP3414708B2/ja
Priority claimed from JP2000268510A external-priority patent/JP3414710B2/ja
Priority claimed from JP2000297107A external-priority patent/JP3421009B2/ja
Application filed by Clariant International Ltd filed Critical Clariant International Ltd
Priority to DE60126736T priority Critical patent/DE60126736T2/de
Priority to US10/110,656 priority patent/US6902875B2/en
Priority to EP01958459A priority patent/EP1239332B1/en
Publication of WO2002019037A1 publication Critical patent/WO2002019037A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/41—Compounds containing sulfur bound to oxygen
    • C08K5/42—Sulfonic acids; Derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
    • Y10S430/121—Nitrogen in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/127—Spectral sensitizer containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
PCT/JP2001/007251 2000-08-31 2001-08-24 Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof Ceased WO2002019037A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE60126736T DE60126736T2 (de) 2000-08-31 2001-08-24 Strahlungsempfindliche polysilazan-zusammensetzung, daraus erzeugte muster sowie ein verfahren zur veraschung eines entsprechenden beschichtungsfilms
US10/110,656 US6902875B2 (en) 2000-08-31 2001-08-24 Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof
EP01958459A EP1239332B1 (en) 2000-08-31 2001-08-24 Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000262703A JP3414708B2 (ja) 2000-08-31 2000-08-31 パターン化されたポリシラザン膜の形成方法
JP2000-262703 2000-08-31
JP2000268510A JP3414710B2 (ja) 2000-09-05 2000-09-05 感光性ポリシラザン塗膜の焼成方法
JP2000-268510 2000-09-05
JP2000297107A JP3421009B2 (ja) 2000-09-28 2000-09-28 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法
JP2000-297107 2000-09-28

Publications (1)

Publication Number Publication Date
WO2002019037A1 true WO2002019037A1 (en) 2002-03-07

Family

ID=27344485

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/007251 Ceased WO2002019037A1 (en) 2000-08-31 2001-08-24 Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof

Country Status (7)

Country Link
US (1) US6902875B2 (ja)
EP (1) EP1239332B1 (ja)
KR (2) KR100793620B1 (ja)
CN (1) CN100395662C (ja)
AT (1) ATE354818T1 (ja)
DE (1) DE60126736T2 (ja)
WO (1) WO2002019037A1 (ja)

Cited By (2)

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WO2004010223A1 (ja) * 2002-07-18 2004-01-29 Az Electronic Materials (Japan) K.K. 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法
WO2004019132A1 (ja) * 2002-08-20 2004-03-04 Az Electronic Materials (Japan) K.K. 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法

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DE19815978B4 (de) * 1998-04-09 2004-01-08 Forschungszentrum Karlsruhe Gmbh Verfahren zur Herstellung von Klein- und Mikroteilen aus Keramik
US20040081912A1 (en) * 1998-10-05 2004-04-29 Tatsuro Nagahara Photosensitive polysilazane composition and method of forming patterned polysilazane film
US7060637B2 (en) * 2003-05-12 2006-06-13 Micron Technology, Inc. Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials
KR20060055515A (ko) * 2003-07-14 2006-05-23 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 감광성 조성물용 현상액 및 이를 사용하는 패턴화된내식막의 형성방법
JP4342895B2 (ja) * 2003-10-06 2009-10-14 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US7071121B2 (en) * 2003-10-28 2006-07-04 Hewlett-Packard Development Company, L.P. Patterned ceramic films and method for producing the same
WO2006064918A1 (ja) * 2004-12-17 2006-06-22 The University Of Tokushima 基材表面の改質方法、改質された表面を有する基材およびその製造方法
DE602005008774D1 (de) * 2004-12-29 2008-09-18 3M Innovative Properties Co Multiphoton-polymerisierbare vorkeramische polymerzusammensetzungen
US7297374B1 (en) * 2004-12-29 2007-11-20 3M Innovative Properties Company Single- and multi-photon polymerizable pre-ceramic polymeric compositions
JP4237184B2 (ja) * 2005-03-31 2009-03-11 エルピーダメモリ株式会社 半導体装置の製造方法
DE102007023094A1 (de) * 2007-05-16 2008-11-20 Clariant International Ltd. Farbpigmentierte Lackzusammensetzung mit hoher Deckkraft, erhöhter Kratzbeständigkeit und easy to clean Eigenschaften
JP4976927B2 (ja) * 2007-06-08 2012-07-18 キヤノン株式会社 情報配信システムおよび被配信者側装置およびプログラム
CN101458462B (zh) * 2007-12-13 2011-03-23 上海华虹Nec电子有限公司 降低半导体制造中光刻胶显影缺陷的光刻显影方法
TWI503334B (zh) * 2009-02-19 2015-10-11 Jsr Corp 聚合物及敏輻射線性組成物、及單體
EP2627724A4 (en) * 2010-08-17 2014-04-09 Texas State University San Marcos A Component Of The Texas State University System PERMANENT CERAMIC NANOCOMPOSITE HEAT INSULATION LAYERS FOR METALS AND FIRE-RESISTANT MATERIALS
US20140124877A1 (en) * 2012-11-02 2014-05-08 Qualcomm Incorporated Conductive interconnect including an inorganic collar
WO2016035560A1 (ja) 2014-09-02 2016-03-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法
US11079681B2 (en) * 2018-11-21 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography method for positive tone development
CN115651538B (zh) * 2022-11-17 2023-06-02 杭州万观科技有限公司 一种耐酸性盐雾的聚硼硅氮烷/环氧复合涂料

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JPS5258374A (en) * 1975-11-10 1977-05-13 Toshiba Corp Improvement in sensitivity of positive type photo resist
JPH10186663A (ja) * 1996-12-26 1998-07-14 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
JPH10319597A (ja) * 1997-05-23 1998-12-04 Mitsubishi Electric Corp 感光性シリコーンラダー系樹脂組成物、この樹脂組成物にパターンを転写するパターン転写方法および上記樹脂組成物を用いた半導体装置
JPH11269229A (ja) * 1998-01-30 1999-10-05 Agfa Gevaert Ag Ｎ―置換マレイミド単位を含む重合体、およびそれらの放射線感応性混合物における使用
JP2000181069A (ja) * 1998-10-05 2000-06-30 Tonen Corp 感光性ポリシラザン組成物及びパタ―ン化されたポリシラザン膜の形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004010223A1 (ja) * 2002-07-18 2004-01-29 Az Electronic Materials (Japan) K.K. 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法
WO2004019132A1 (ja) * 2002-08-20 2004-03-04 Az Electronic Materials (Japan) K.K. 層間絶縁膜用感光性組成物及びパターン化層間絶縁膜の形成方法

Also Published As

Publication number Publication date
US6902875B2 (en) 2005-06-07
ATE354818T1 (de) 2007-03-15
KR100804444B1 (ko) 2008-02-20
US20030113657A1 (en) 2003-06-19
CN100395662C (zh) 2008-06-18
CN1388920A (zh) 2003-01-01
DE60126736D1 (de) 2007-04-05
EP1239332A4 (en) 2004-11-10
KR20020092922A (ko) 2002-12-12
KR100793620B1 (ko) 2008-01-11
KR20070086644A (ko) 2007-08-27
EP1239332B1 (en) 2007-02-21
DE60126736T2 (de) 2007-11-15
EP1239332A1 (en) 2002-09-11

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