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WO2002069365A2 - Cuve de traitement avec rotation de pièces à usiner micro-électroniques - Google Patents

Cuve de traitement avec rotation de pièces à usiner micro-électroniques Download PDF

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Publication number
WO2002069365A2
WO2002069365A2 PCT/US2002/005158 US0205158W WO02069365A2 WO 2002069365 A2 WO2002069365 A2 WO 2002069365A2 US 0205158 W US0205158 W US 0205158W WO 02069365 A2 WO02069365 A2 WO 02069365A2
Authority
WO
WIPO (PCT)
Prior art keywords
process vessel
gas
workpieces
microelectronic workpieces
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/005158
Other languages
English (en)
Other versions
WO2002069365A3 (fr
Inventor
Dana R. Scranton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semitool Inc
Original Assignee
Semitool Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc filed Critical Semitool Inc
Priority to AU2002244101A priority Critical patent/AU2002244101A1/en
Publication of WO2002069365A2 publication Critical patent/WO2002069365A2/fr
Publication of WO2002069365A3 publication Critical patent/WO2002069365A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the field of the invention is cleaning, stripping, and etching of microelectronic workpieces. More specifically, the field of the invention relates to methods and devices that use vapor or gas phase processes to clean, strip, etch, or otherwise process the surface of a microelectronic workpiece.
  • a microelectronic workpiece is defined here to include a workpiece formed from a substrate on which microelectronic circuits or components, data storage elements or layers, or micro-mechanical or optical elements are formed.
  • Cleaning processes are intended to remove photoresist, particulate matter, organic species and other contaminants from the surface of the workpiece. Contaminants that are not removed during cleaning tend to reduce the overall yield of the manufacturing process. This reduces the number of usable electronic components, such as integrated circuits, microprocessors, memory devices, etc. that can be obtained from a workpiece.
  • Process uniformity refers to uniform processing across the surface of an individual microelectronic workpiece as well as to uniform processing of separate microelectronic workpieces contained within a given batch.
  • Batch processes have the inherent advantage of faster and more efficient production, when conducting the same processing step.
  • batch processing has the disadvantage that the workpieces are typically held within a process vessel and are closely spaced together and parallel in an array configuration. This configuration limits the access of processing fluids to the surfaces of the workpieces.
  • a processor for processing microelectronic workpieces within a vapor- phase environment includes a process vessel adapted to hold one or more microelectronic workpieces.
  • the microelectronic workpieces are preferably held within a rotatable fixture.
  • a motor rotates the fixture.
  • a gas or vapor system supplies gas or vapor into the process vessel for processing microelectronic workpieces. The rotation of the workpieces and fixture provides more uniform processing.
  • the vapor can be made to circulate around them via a spinning vane or rotor element, pumping or spraying.
  • the processor according to first aspect uses a gas or vapor selected from the group consisting of H 2 0, 0 3 , HF, HC1, and NH 4 OH.
  • a method of processing microelectronic workpieces includes the step of rotating the microelectronic workpieces in the presence of the gas or vapor.
  • the workpieces are placed into a rotatable fixture within a chamber.
  • the invention resides as well in subcombinations of the features and steps described.
  • the use of any particular vapor-phase chemistry is not essential to the invention. Rather, the invention more broadly contemplates performing a batch vapor-phase process within a process vessel and with rotation of the microelectronic workpieces within the vapor-phase environment.
  • FIG. 1 is a cut away perspective view of the process vessel.
  • FIG. 2 is a cut away perspective view of the process vessel according to a second, separate aspect of the invention.
  • FIG. 3 is side view of two microelectronic workpieces contained within the rotatable fixture.
  • FIG. 4 is a perspective view of a rotatable fixture according to one aspect of the invention.
  • FIG. 5 is a side view of the a process vessel according to yet another aspect of the invention.
  • a chemical vapor or gas environment is provided around the workpieces, with the workpieces rotating within that environment. No other steps or apparatus is essential.
  • the workpieces are preferably, but not necessarily, already rotating, before the chemical vapor or gas is introduced to form the vapor or gas environment around the workpieces.
  • the vapor or gas, or the workpieces themselves, may optionally be heated before and/or during processing.
  • a processor 2 includes a process vessel or tank 4.
  • the term "process vessel” here means walls forming a confined space for at least partially containing a gas or vapor.
  • a process vessel may have one or more open sides or ends, such as a channel or duct.
  • the processor 2 is used to house microelectronic workpieces 6 during processing.
  • the microelectronic workpieces 6 can include, for example, semiconductor wafers, memory media, optical media, etc.
  • the processor 2 is adapted for use in cleaning, etching, or stripping of microelectronic workpieces 6.
  • a rotatable fixture 8 is supported within the interior of the process vessel 4.
  • the term "rotatable fixture” here means any structure capable of holding workpieces during rotation of the workpieces.
  • the rotatable fixture 8 preferably includes two opposing end plates 10 that are connected by retainers 12. While Figure 1 shows three workpiece retainers 12 that connect the end plates 10 of the rotatable fixture 8, additional workpiece retainers 12 can also be used.
  • each workpiece retainer 12 contains a plurality of grooves 14 along a portion of its length. The grooves 14 have slots or are shaped to receive the edges 7 of microelectronic workpieces 6.
  • the rotatable fixture need not be an essential element, as other techniques are available to achieve relative movement between the workpieces and the vapor.
  • the fixture 8 is rotatably supported at one or both ends of the process vessel 4.
  • a shaft 16 is connected to one of the end plates 10 of the rotatable fixture 8 and projects through the wall 18 of the process vessel 4.
  • the shaft 16 is coupled to a motor 20 via a belt, drive chain 22, gears, or any equivalent connection. Rotation of the motor 20 causes rotation of the fixture 8 and micro- electronic workpieces 6 within the process vessel 4.
  • the processor 2 preferably includes a lid 24 that is located atop the process vessel 4.
  • the lid 24 closes off the top of the vessel 4 and optionally forms a substantially air-tight seal with the process vessel 4 when in place.
  • the lid 24 thus reduces or prevents the escape of gas or vapor during processing of the microelectronic workpieces 6.
  • the lid 24 is preferably removable from the process vessel 4, or movable into an open position (by e.g., pivoting, sliding, etc.) such that the workpieces 6 can be removed from the process vessel 4 after processing.
  • a lid is not necessary and may be omitted.
  • the process vessel 4 also preferably includes at least one vapor or gas intake port 30.
  • the intake port 30 delivers vapor or gas phase chemicals into the process vessel 4. While the intake port 30 is shown in one of the walls 18 of the process vessel 4, it can be located in other locations such as within the lid 24.
  • the process vessel 4 also preferably includes a vent 32 to vent or exhaust vapor from the process vessel 4. While the vent 32 is shown in Figures 1 and 2 as being located in the lid 24, the vent 32, if used, can be located in other locations of the process vessel 4.
  • the vapor intake port 30 is connected to a source of gas or vapor 33 such as H 2 0, 0 3 , HF, HC1, and NH 4 OH (gas and vapor are used here interchangeably) .
  • the intake port 30 and the source of vapor 33 form a vapor or gas introduction system. While H 2 0, 0 3 , HF, HC1, and NH 4 OH are preferred process chemicals, other gases or vapors used for etching, cleaning, or stripping of microelectronic workpieces 6 can also be used with the processor 2.
  • Figure 1 also shows heaters 34 on the wall 18 of the process vessel 4. The heaters 34 are used to heat the gases or vapors contained within the process vessel 4.
  • FIG. 2 illustrates an alternative embodiment of the processor 2.
  • the motor 20 is directly coupled with the rotatable fixture 8.
  • the motor 20 is external to the process vessel 2 as is shown in Figure 2.
  • the motor 20 can include a servo-motor that allows for precise control of the rotational characteristics of the rotatable fixture 8.
  • FIG. 3 schematically illustrates one of the advantages of the present processor 2.
  • Rotation of the microelectronic workpieces 6 causes the boundary layer near the front and back surfaces of the microelectronic workpieces 6 to eject flow radially outward as illustrated by arrows A.
  • This boundary layer is replaced with the inflow of homogenous vapor from the environment within the process vessel 4 as shown by arrow B.
  • the rotational movement of the fixture 8 facilitates a uniform flow of vapor over the front and back surfaces of the microelectronic workpieces 6.
  • Figure 4 shows a rotatable fixture 8 with the workpiece retainers 12 having projections or vanes 36 extending radially outwardly.
  • the projections or vanes 36 assist in mixing the vapor environment within the process vessel 4.
  • the projections 36 also assist in creating flow of homogenous vapor over the front and back surfaces of the microelectronic workpieces 6.
  • Figure 5 shows still another embodiment of the processor 2 with the fixture 8 is rotatable along a vertical axis as opposed to a horizontal axis of rotation shown in Figures 1 and 2.
  • the fixture 8 is mounted only to one end of the process vessel 4.
  • the motor 20 and rotatable fixture 8 can be vertically lifted out of the process vessel 4 in the direction of arrow C when processing is complete.
  • the retainers 12, grooves 14, shaft 16, plates 10, motor 20, chain 22, lid 24, intake port 30, vent 32, heaters 34, and vanes 36, described above are not essential, and may be omitted or replaced with equivalents or manual steps.
  • the microelectronic workpieces 6 are loaded into the rotatable fixture 8.
  • the microelectronic workpieces 6 are preferably loaded using a robot arm 40 having an end effector 42, as shown in Fig. 1.
  • the microelectronic workpieces 6 are lowered into position within the process vessel 4 wherein the microelectronic workpieces 6 are secured into the corresponding grooves 14 of the workpiece retainers 12.
  • the entire rotatable fixture 8 can first be removed from the process vessel 4 wherein the loading of the individual microelectronic workpieces 6 occurs outside of the process vessel 4. In this case, the loaded fixture 8 is then placed back into the process vessel 4.
  • the lid 24 is closed, and optionally sealed on top of the process vessel 4.
  • the motor 20 is then turned on to spin the fixture 8 within the process vessel 4.
  • the rotation of the motor 20 is controlled via a controller 21.
  • the fixture 8 is rotated at from 1-3000 rpm, or more preferably from about 5 or 8 to 800 or 900 rpm, or from 200 or 300 to 500, 600, or 700 rpm.
  • the rotation speed depends on the makeup of the gases or vapors, the temperature of the vapors, the concentration of the vapors, and the amount of mixing created by the rotation of the fixture 8.
  • gas or vapor is introduced into the process vessel 4 via the intake port 30.
  • the gas or vapor that is admitted to the interior of the process vessel 4 may include a mixture of multiple process gases or a single process gas.
  • the gas or vapor may also be mixed with a carrier gas such as air, N 2 , or the like.
  • the gas or vapor introduced to the process vessel 4 may be pre-heated prior to entry or heated within the process vessel 4 via heaters 34.
  • the gas or vapor within the process vessel 4 then reacts with surfaces of the microelectronic workpieces 6. For example, if the processor 2 is used for etching silicon, a vapor containing HF might be used.
  • the motor 20 reduces the speed of rotation of the rotatable fixture 8 until the fixture comes to a complete stop.
  • the lid 24 is then opened up or removed from the process vessel 4 and the microelectronic workpieces 6 are lifted out of the process vessel 4.
  • the microelectronic workpieces 6 are lifted out of the process vessel 4 using the robot arm 40 and end effector 42.
  • the apparatus and methods described are effective for processing with gases or vapors, rather than liquids.
  • the vessel is preferably substantially free or empty of any liquid or if any liquid is present, such liquid is below the level of the rotatable fixture, so that the rotatable fixture does not move through or mix any liquid.
  • the vessel may have a closed bottom with no drain, other than for the vent 32, which vents gas or vapor.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne une machine de traitement destinée à traiter des pièces à usiner micro-électroniques dans un environnement en phase vapeur comprenant une cuve de traitement conçue de manière à contenir une ou plusieurs pièces à usiner micro-électroniques dans un agencement rotatif. Un moteur d'entraînement est couplé à l'agencement rotatif afin de le faire tourner durant le traitement. Un système d'introduction de gaz introduit un gaz dans la cuve de traitement en vue de traiter les pièces à usiner micro-électroniques. La machine de traitement peut être utilisée pour nettoyer, décaper ou ébarber les pièces à usiner micro-électroniques.
PCT/US2002/005158 2001-02-27 2002-02-21 Cuve de traitement avec rotation de pièces à usiner micro-électroniques Ceased WO2002069365A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002244101A AU2002244101A1 (en) 2001-02-27 2002-02-21 Vessel for processing microelectronic workpieces

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79577601A 2001-02-27 2001-02-27
US09/795,776 2001-02-27

Publications (2)

Publication Number Publication Date
WO2002069365A2 true WO2002069365A2 (fr) 2002-09-06
WO2002069365A3 WO2002069365A3 (fr) 2002-12-19

Family

ID=25166412

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/005158 Ceased WO2002069365A2 (fr) 2001-02-27 2002-02-21 Cuve de traitement avec rotation de pièces à usiner micro-électroniques

Country Status (2)

Country Link
AU (1) AU2002244101A1 (fr)
WO (1) WO2002069365A2 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4403567A (en) * 1980-08-21 1983-09-13 Commonwealth Scientific Corporation Workpiece holder
US5672212A (en) * 1994-07-01 1997-09-30 Texas Instruments Incorporated Rotational megasonic cleaner/etcher for wafers
WO1997015073A1 (fr) * 1995-10-17 1997-04-24 Asm Japan K.K. Appareil de traitement de semi-conducteurs
WO1999036588A1 (fr) * 1998-01-15 1999-07-22 Torrex Equipment Corporation Procede et dispositif pour procede ameliore de depot chimique en phase vapeur comprenant des injecteurs de gaz reglables a regulation de temperature

Also Published As

Publication number Publication date
WO2002069365A3 (fr) 2002-12-19
AU2002244101A1 (en) 2002-09-12

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