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WO2002063067A1 - Procede et appareil de depot autocatalytique - Google Patents

Procede et appareil de depot autocatalytique Download PDF

Info

Publication number
WO2002063067A1
WO2002063067A1 PCT/JP2002/000623 JP0200623W WO02063067A1 WO 2002063067 A1 WO2002063067 A1 WO 2002063067A1 JP 0200623 W JP0200623 W JP 0200623W WO 02063067 A1 WO02063067 A1 WO 02063067A1
Authority
WO
WIPO (PCT)
Prior art keywords
electroless plating
solution
supplied
work
metal ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/000623
Other languages
English (en)
French (fr)
Inventor
Hiroshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US10/467,270 priority Critical patent/US20040062861A1/en
Priority to DE60218437T priority patent/DE60218437D1/de
Priority to EP02716431A priority patent/EP1371755B1/en
Priority to KR10-2003-7010383A priority patent/KR100507019B1/ko
Priority to JP2002562797A priority patent/JP4083016B2/ja
Publication of WO2002063067A1 publication Critical patent/WO2002063067A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • H10P14/46—
    • H10W20/056—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture And Refinement Of Metals (AREA)
PCT/JP2002/000623 2001-02-07 2002-01-29 Procede et appareil de depot autocatalytique Ceased WO2002063067A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/467,270 US20040062861A1 (en) 2001-02-07 2002-01-29 Method of electroless plating and apparatus for electroless plating
DE60218437T DE60218437D1 (de) 2001-02-07 2002-01-29 Verfahren zur stromlosen metallabscheidung und vorrichtung zur stromlosen metallabscheidung
EP02716431A EP1371755B1 (en) 2001-02-07 2002-01-29 Method of electroless plating and apparatus for electroless plating
KR10-2003-7010383A KR100507019B1 (ko) 2001-02-07 2002-01-29 무전해 도금 처리 방법 및 무전해 도금 처리 장치
JP2002562797A JP4083016B2 (ja) 2001-02-07 2002-01-29 無電解メッキ処理方法および無電解メッキ処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001-30824 2001-02-07
JP2001030824 2001-02-07

Publications (1)

Publication Number Publication Date
WO2002063067A1 true WO2002063067A1 (fr) 2002-08-15

Family

ID=18894991

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/000623 Ceased WO2002063067A1 (fr) 2001-02-07 2002-01-29 Procede et appareil de depot autocatalytique

Country Status (8)

Country Link
US (1) US20040062861A1 (ja)
EP (1) EP1371755B1 (ja)
JP (1) JP4083016B2 (ja)
KR (1) KR100507019B1 (ja)
CN (1) CN1223705C (ja)
AT (1) ATE355399T1 (ja)
DE (1) DE60218437D1 (ja)
WO (1) WO2002063067A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004158805A (ja) * 2002-11-08 2004-06-03 Asahi Kasei Corp 有機半導体素子の製造方法及び有機半導体素子

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI20030816A7 (fi) * 2003-05-30 2004-12-01 Avantone Oy Menetelmä metallijohtimien valmistamiseksi substraatille
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
JP5154007B2 (ja) 2004-12-06 2013-02-27 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Ｓｏｋｕｄｏ 基板処理装置
JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
US20120058362A1 (en) * 2010-09-08 2012-03-08 Infineon Technologies Ag Method for depositing metal on a substrate; metal structure and method for plating a metal on a substrate
TWI485286B (zh) * 2011-11-16 2015-05-21 荏原製作所股份有限公司 Electroless plating and electroless plating

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936541B1 (ja) * 1969-08-15 1974-10-01
JPH08319578A (ja) * 1995-05-24 1996-12-03 Tdk Corp 湿式法による多層膜の製造方法およびその製造装置
JPH10280157A (ja) * 1997-04-04 1998-10-20 Suga Test Instr Co Ltd イオン交換膜への白金めっき方法
JPH11140657A (ja) * 1997-11-12 1999-05-25 Ricoh Co Ltd 無電解めっき方法
JP2000133619A (ja) * 1998-10-29 2000-05-12 Applied Materials Inc 成膜方法及び装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027686A (en) * 1973-01-02 1977-06-07 Texas Instruments Incorporated Method and apparatus for cleaning the surface of a semiconductor slice with a liquid spray of de-ionized water
US5234499A (en) * 1990-06-26 1993-08-10 Dainippon Screen Mgf. Co., Ltd. Spin coating apparatus
EP0618504B1 (en) * 1993-03-25 2001-09-26 Tokyo Electron Limited Method of forming coating film and apparatus therefor
WO1996032521A1 (fr) * 1995-04-10 1996-10-17 Kao Corporation Procede de metallisation au bain chaud, et procede et equipement de production de matrices
WO1999010146A1 (en) * 1997-08-25 1999-03-04 Velcro Industries B.V. Forming mold cavities
US6984302B2 (en) * 1998-12-30 2006-01-10 Intel Corporation Electroplating cell based upon rotational plating solution flow
US6258223B1 (en) * 1999-07-09 2001-07-10 Applied Materials, Inc. In-situ electroless copper seed layer enhancement in an electroplating system
US6153935A (en) * 1999-09-30 2000-11-28 International Business Machines Corporation Dual etch stop/diffusion barrier for damascene interconnects
US6376013B1 (en) * 1999-10-06 2002-04-23 Advanced Micro Devices, Inc. Multiple nozzles for dispensing resist
US6403500B1 (en) * 2001-01-12 2002-06-11 Advanced Micro Devices, Inc. Cross-shaped resist dispensing system and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936541B1 (ja) * 1969-08-15 1974-10-01
JPH08319578A (ja) * 1995-05-24 1996-12-03 Tdk Corp 湿式法による多層膜の製造方法およびその製造装置
JPH10280157A (ja) * 1997-04-04 1998-10-20 Suga Test Instr Co Ltd イオン交換膜への白金めっき方法
JPH11140657A (ja) * 1997-11-12 1999-05-25 Ricoh Co Ltd 無電解めっき方法
JP2000133619A (ja) * 1998-10-29 2000-05-12 Applied Materials Inc 成膜方法及び装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004158805A (ja) * 2002-11-08 2004-06-03 Asahi Kasei Corp 有機半導体素子の製造方法及び有機半導体素子

Also Published As

Publication number Publication date
JPWO2002063067A1 (ja) 2004-06-10
JP4083016B2 (ja) 2008-04-30
ATE355399T1 (de) 2006-03-15
CN1491297A (zh) 2004-04-21
KR20030079985A (ko) 2003-10-10
US20040062861A1 (en) 2004-04-01
EP1371755A1 (en) 2003-12-17
CN1223705C (zh) 2005-10-19
DE60218437D1 (de) 2007-04-12
EP1371755A4 (en) 2005-07-27
KR100507019B1 (ko) 2005-08-09
EP1371755B1 (en) 2007-02-28

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