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WO2001018115A1 - Composition a base de resine epoxy et dispositif semi-conducteur - Google Patents

Composition a base de resine epoxy et dispositif semi-conducteur Download PDF

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Publication number
WO2001018115A1
WO2001018115A1 PCT/JP2000/005992 JP0005992W WO0118115A1 WO 2001018115 A1 WO2001018115 A1 WO 2001018115A1 JP 0005992 W JP0005992 W JP 0005992W WO 0118115 A1 WO0118115 A1 WO 0118115A1
Authority
WO
WIPO (PCT)
Prior art keywords
epoxy resin
resin composition
cured product
encapsulating
curing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2000/005992
Other languages
English (en)
Inventor
Hironori Osuga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to EP00956907A priority Critical patent/EP1137708A1/fr
Publication of WO2001018115A1 publication Critical patent/WO2001018115A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H10W74/47—
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C08L2666/14—Macromolecular compounds according to C08L59/00 - C08L87/00; Derivatives thereof
    • C08L2666/22—Macromolecular compounds not provided for in C08L2666/16 - C08L2666/20

Definitions

  • the present invention relates to an epoxy resin composition for encapsulating of semiconductors which is suitable for the so-called area mounting type semiconductor devices formed by mounting semiconductor elements on one side of a printed circuit board or a metallic lead frame and encapsulating with a resin substantially only the side on which the semiconductor elements are mounted, and to a semiconductor device manufactured using the resin composi- tion.
  • the structure of the area mounting type semiconductor devices is such that semicon- ductor elements are mounted on one side of rigid circuit boards such as BT resin/copper foil circuit board
  • solder balls are arranged in plane on the other side of the boards for bonding to a circuit board on which a semiconductor device is mounted.
  • structures using metallic substrates such as lead frames have also been developed in addition to the above organic substrates .
  • the structure of these area mounting type semiconductor devices has the form of one side encapsulating, that is, only the side of the board on which semiconductor elements are mounted is encapsulated with an epoxy resin composition and the side on which solder balls are formed is not encapsulated.
  • an encapsulating resin layer of about several ten ju s is sometimes present also on the solder ball-formed side, while an encapsulating resin layer of about several hundred ms to several millimeters is formed on the semiconductor element-mounted side, and, as a result, this is substantially one side encapsulating.
  • warping is apt to occur just after molding because of differences in thermal expansion • heat shrinkage between the organic substrate or the metal substrate and the cured product of the epoxy resin composition or because of cure shrinkage at the time of molding and curing of the epoxy resin composi- tion. Furthermore, when these semiconductor devices are bonded onto circuit boards with solder, this is conducted through a heating step at 200°C or higher, during which warping of the semiconductor devices occurs and many solder balls are not in flat state and are apart from the circuit boards to cause deterioration in reliability of electrical bonding.
  • Tg such as BT resin and polyimide resin
  • BT resin and polyimide resin are widely used for organic substrates, and these have a Tg higher than about 170°C which is the molding temperature of an epoxy resin composition. Therefore, during the cooling step of from the molding temperature to room temperature, shrinkage occurs only in the area of ⁇ l of the organic substrate. Accordingly, it is considered that if the cured product of epoxy resin composition also has a high Tg and the same ⁇ l as that of the organic substrate and, besides, is zero in the cure shrinkage, the warping is nearly zero.
  • a method of raising the Tg by combination of a polyfunctional epoxy resin and a polyfunctional phenolic resin and meeting the ⁇ l by adjusting the amount of inorganic filler to be added has been already proposed a method of raising the Tg by combination of a polyfunctional epoxy resin and a polyfunctional phenolic resin and meeting the ⁇ l by adjusting the amount of inorganic filler to be added.
  • the present invention provides an epoxy resin composition which causes little warping after molding or solder treatment in area mounting type semiconductor devices and is excellent in reliability of solder treatment or the like because it is especially excellent in adhesion to organic substrates, and a semiconductor device manufactured using the epoxy resin composition.
  • a denotes a flexural modulus (N/mm 2 ) at molding temperature
  • b denotes a cure shrinkage ( % )
  • c denotes a heat shrinkage ( % ) of from molding temperature to room temperature
  • a denotes a flexural modulus (N/mm 2 ) at molding temperature
  • b denotes a cure shrinkage ( % )
  • c denotes a heat shrinkage ( % ) of from molding temperature to room temperature
  • the above epoxy resin composition wherein the cured product has a water absorption rate of not more than 0.2% by weight after the cured product is treated for 168 hours in an environment of 85 C C and 60% in relative humidity and the epoxy resin and/or the phenolic resin have/has a naphthalene skeleton, and to a semiconductor device manufactured by encapsulating semiconductor elements with said epoxy resin composition.
  • FIG. 1 is a graph which shows relations of flexural modulus, cure shrinkage and heat shrinkage of the cured products of the epoxy resin compositions in examples and comparative examples.
  • the molding temperature in the present invention means a temperature of a mold when the epoxy resin composition is cured by heating and is usually in the range of 160-190°C, but it is not limited to this temperature range.
  • the value "a” is measured in accordance with JIS K 6911.
  • the value "b+c” is obtained in the following manner.
  • a cured product in the form of a disk of 100 mm in diameter and 3 mm in thickness is molded using a transfer molding machine under the conditions of a mold temperature of 175°C, an injection pressure of 70 kg/cm 2 and a curing time of 90 seconds, and inner diameter of the mold cavity at 175°C and outer diameter of the disk cured product at room temperature (25°C) are measured.
  • the value "b+c” is calculated from the formula, [ ⁇ (inner diameter of the mold cavity at 175°C)- (outer diameter of the disk cured product at 25°C) ⁇ /( inner diameter of the mold cavity at 175°C)] X 100.
  • the cured product used for evaluation is one which has not been subjected to post-curing treatment.
  • the cured product obtained by heating and curing the epoxy resin composition of the present invention has a moisture absorption rate of not more than 0.20% by weight after the cured product is treated for 168 hours in an environment of 85 C C and 60% in relative humidity. If the moisture absorption rate exceeds 0.20% by weight, in the case of carrying out the solder bonding by solder treatment, water which is present in a semiconductor device due to the absorption from the cured product of the epoxy resin composition and the organic substrate, is abruptly vaporized at high temperatures to produce a stress, which causes cracking in the semicon- ductor device or separation at the interface between the semiconductor element-mounted side of the organic substrate and the cured product of the epoxy resin composition, resulting in deterioration of soldering crack resistance.
  • the cured product used for measurement of the moisture absorption rate is one which is removed from the mold and then post-cured at 175 C C for 2 hours.
  • the epoxy resins used in the present invention include all of monomers, oligomers and polymers having an epoxy group, for example, triphenolmethane type epoxy resins, biphenyl type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins, o-cresol novolak type epoxy resins, epoxy resins having a naphthalene skeleton, and dicyclopentadiene type epoxy resins. These may be used each alone or in admixture. Especially, when epoxy resins having a naphthalene skeleton are used, flexural modulus at molding temperature is high, cure shrinkage and heat shrinkage of from molding temperature to room temperature are small, and moisture absorption rate is low, and, hence, these epoxy resins are preferred.
  • the phenolic resins used in the present invention include all of monomers, oligomers and polymers having two or more phenolic hydroxyl groups capable of forming a crosslinked structure upon curing reaction with the above epoxy resins.
  • examples thereof are phenolic novolak resins, cresol novolak resins, phenolic aralkyl resins such as p-xylylene-modified phenolic resins and m-xylylene • p- xylylene-modified phenolic resins, resins having a naphthalene skeleton, terpene-modified phenolic resins, and dicyclopentadiene-modified phenolic resins. These may be used each alone or in admixture.
  • the curing accelerators used in the present invention are those which can act as catalysts for cross- linking reaction of the epoxy resin with the phenolic resin. Examples of them are 1,8-diazabicyclo (5,4,0 )- undecene-7, amine compounds such as tributylamine, organic phosphorus compounds such as triphenylphosphine, tetraphenylphosphonium • tetraphenyl borate, and imidazole compounds such as 2-methylimidazole.
  • the curing accelerators are not limited to these examples. These may be used each alone or in admixture.
  • the inorganic fillers used in the present invention have no special limitation and those generally used for encapsulating materials can be used. Examples thereof are fused silica, crystalline silica, secondary aggregation silica, alumina, titanium white, aluminum hydroxide, talc, clay, and glass fibers.
  • the fused silica is especially preferred.
  • the fused silica may be either in crushed or spherical form, but it is more preferred to use mainly spherical silica for increasing amount thereof to be added and inhibiting increase of melt viscosity of the epoxy resin composition.
  • the proportion of a phenolic resin (B) is 20-300 parts by weight
  • the proportion of a curing accelerator (C) is 0.1-30 parts by weight
  • the proportion of an inorganic filler (D) is 200-2000 parts by weight on the basis of 100 parts by weight of an epoxy resin (A).
  • the proportion of a phenolic resin (B) is less than 20 parts by weight, curing is insufficient, and when said proportion exceeds 300 parts by weight, the problem that uncured material remains is caused.
  • the epoxy resin composition of the present invention may optionally contain, in addition to the components (A)-(D), various additives, for example, flame retardants such as brominated epoxy resin, antimony oxide and phosphorus compounds, inorganic ion exchangers, coupling agents, coloring agents such as carbon black, releasing agents such as natural wax, synthetic wax, higher fatty acids and metallic salts thereof and paraffin, low stress components such as silicone and rubber, and antioxidants.
  • flame retardants such as brominated epoxy resin, antimony oxide and phosphorus compounds
  • inorganic ion exchangers such as inorganic ion exchangers
  • coupling agents coloring agents such as carbon black
  • releasing agents such as natural wax, synthetic wax, higher fatty acids and metallic salts thereof and paraffin
  • low stress components such as silicone and rubber, and antioxidants.
  • the epoxy resin composition of the present invention is obtained by mixing the components (A) -(D) and other additives by a mixer, then heating and kneading the mixture by a kneader such as a heating kneader, a hot roll and an extruder, and cooling and grinding the kneaded product.
  • a kneader such as a heating kneader, a hot roll and an extruder
  • the composition can be cured and molded by conventional molding methods such as transfer molding, compression molding and injection molding.
  • Example 1 10.2 Parts by weight of an epoxy resin represented by the following formula (1) (Epikote 1032H manufactured by Yuka Shell Epoxy Co., Ltd.; softening point: 60°C, epoxy equivalent: 170):
  • Flexural modulus "a” at molding temperature Measurement was conducted in accordance with JIS K 6911 as mentioned above. A cured product was molded using a transfer molding machine under the conditions of a mold temperature of 175°C, an injection pressure of 70 kg/cm 2 and a curing time of 90 seconds, and the flexural modulus was measured at 175°C. The unit was N/mm 2 .
  • a cured product in the form of a disk of 100 mm in diameter and 3 mm in thickness was molded using a transfer molding machine under the conditions of a mold temperature of 175 C C, an injection pressure of 70 kg/cm 2 and a curing time of 90 seconds, and inner diameter of the mold cavity at 175°C and outer diameter of the disk cured product at room temperature (25 C C) were measured.
  • the value "b+c” was calculated from the formula, [ ⁇ (inner diameter of the mold cavity at 175°C)- (outer diameter of the disk cured product at 25°C) ⁇ /( inner diameter of the mold cavity at 175°C)] X 100.
  • the unit was % .
  • Moisture absorption rate A disk of 50 mm in diameter and 3 mm in thickness was molded using a transfer molding machine under the conditions of a mold temperature of 175°C, an injection pressure of 70 kg/cm 2 and a curing time of 90 seconds, and post-cured at 175°C for 2 hours. The cured product was further treated for 168 hours in an environment of 85°C and 60% in relative humidity, and change of weight was measured. The unit was % by weight.
  • Warping amount of package A 225pBGA (BT resin substrate of 0.36 mm in thickness; chip size: 12 mm X 12 mm X 0.35 mm thick; package size: 24 mm X 24 mm; thickness of encapsulating resin: 1.17 mm) was molded using a transfer molding machine under the conditions of a mold temperature of 175°C, an injection pressure of 70 kg/cm 2 and a curing time of 90 seconds, and post-cured at 175°C for 2 hours. The cured product was cooled to room temperature, and, thereafter, displacement in the height direction was measured using a surface roughness meter in diagonal direction from the gate of the package. The largest value of displacement was taken as amount of warping. The unit was / tzm.
  • Soldering crack resistance The above 225pBGA was molded, and post-cured at 175°C for 2 hours to obtain ten samples. These were treated for 168 hours in an environment of 60°C and 60% in relative humidity or in an environment of 85°C and 60% in relative humidity, and, then, treated by IR reflowing (240°C) for 10 seconds. The samples were observed by an ultrasonic defectoscope to examine the presence of internal cracks and various interfacial separations. When the number of defective packages was n, this was expressed by n/10.
  • Releasability Releasability from the mold at the time of molding of the above 225pBGA was examined. The product which was not smoothly removable from the mold was judged to be bad.
  • Examples 2-6 and Comparative Examples 1-6 Components were mixed in accordance with Tables 1 and 2, and epoxy resin compositions were prepared in the same manner as in Example 1 and these were evaluated in the same manner as in Example 1. The results are shown in Tables 1 and 2. Structures and properties of the epoxy resins and phenolic resins used in the examples and the comparative examples are shown below.
  • Epoxy resin comprising a main component represented by the following formula (3) (YX-4000H manufactured by Yuka Shell Epoxy Co., Ltd.; melting point: 105°C, epoxy equivalent: 195):
  • Epoxy resin represented by the following formula (4) (NC7000 manufactured by Nippon Kayaku Co., Ltd.; softening point: 90°C, epoxy equivalent: 225):
  • Phenolic resin represented by the following formula (5) (softening point: 83°C, hydroxyl equivalent: 175) :
  • Phenolic resin represented by the following formula (6) (softening point: 80°C, hydroxyl equivalent: 200) :
  • Phenolic novolak resin softening point: 80°C, hydroxyl equivalent: 105.
  • the area mounting type semiconductor devices obtained using the epoxy resin composition of the present invention are less in warping after molding or soldering treatment and excellent in soldering crack resistance.
  • the epoxy resin composition of the present invention can be applied to encapsulating of various semiconductor devices and is especially suitable for BGA (ball grid array) and CSP (chip scale package).
  • the semiconductor devices obtained by encapsulating with the resin composition of the present invention can be used for computers, liquid crystal display devices, portable telephones and the like.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Epoxy Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention se rapporte à une composition à base de résine époxy destinée à l'encapsulation de semi-conducteurs, qui convient à des dispositifs semi-conducteurs de type à montage de surface et s'avère entraîner moins de gauchissement et présenter d'excellentes caractéristiques de résistance à la fissuration lors du soudage. Cette composition à base de résine époxy comporte en tant qu'ingrédients principaux: (A) une résine époxy, (B) une résine phénolique, (C) un accélérateur de réticulation et (D) une charge inorganique. Les caractéristiques d'un produit réticulé formé par chauffage et réticulation de ladite composition à base de résine époxy satisfont les expressions, a≥10R (R=10x(b+c)-1), 300≤a≤20000 et 0,15≤b+c≤0,50 où a représente un module d'élasticité en flexion (N/mm2) à la température de moulage, b représente le rétrécissement de réticulation (%) et c représente le thermorétrécissement (%) lors du passage de la température de moulage à la température ambiante.
PCT/JP2000/005992 1999-09-06 2000-09-04 Composition a base de resine epoxy et dispositif semi-conducteur Ceased WO2001018115A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP00956907A EP1137708A1 (fr) 1999-09-06 2000-09-04 Composition a base de resine epoxy et dispositif semi-conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/251600 1999-09-06
JP25160099 1999-09-06

Publications (1)

Publication Number Publication Date
WO2001018115A1 true WO2001018115A1 (fr) 2001-03-15

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PCT/JP2000/005992 Ceased WO2001018115A1 (fr) 1999-09-06 2000-09-04 Composition a base de resine epoxy et dispositif semi-conducteur

Country Status (5)

Country Link
EP (1) EP1137708A1 (fr)
KR (1) KR100663680B1 (fr)
CN (1) CN1321179A (fr)
TW (1) TWI281482B (fr)
WO (1) WO2001018115A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10119047B2 (en) 2009-03-27 2018-11-06 Hitachi Chemical Company, Ltd. Thermosetting resin composition, and prepreg, insulating film with support, laminate plate, and printed wiring board, each obtained using same

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CN1301296C (zh) * 2004-06-14 2007-02-21 江苏中电华威电子股份有限公司 一种环氧树脂组合物
CN100590168C (zh) * 2007-04-24 2010-02-17 中国科学院广州化学研究所 一种复合环氧型电子封装材料及其制备方法
JP5838659B2 (ja) * 2010-09-02 2016-01-06 住友ベークライト株式会社 樹脂成形体の製造方法、樹脂組成物の製造方法
WO2013149386A1 (fr) * 2012-04-05 2013-10-10 广东生益科技股份有限公司 Composition de résine époxy, et préimprégné et panneau stratifié recouvert d'une feuille de cuivre faits à partir de ladite composition
CN102633990A (zh) * 2012-04-05 2012-08-15 广东生益科技股份有限公司 环氧树脂组合物及使用其制作的半固化片与覆铜箔层压板
CN103450632A (zh) * 2012-05-28 2013-12-18 汉高华威电子有限公司 一种电子封装用环氧树脂组合物及其制备方法
JP5769674B2 (ja) * 2012-08-08 2015-08-26 日東電工株式会社 電子部品封止用樹脂シート、樹脂封止型半導体装置、及び樹脂封止型半導体装置の製造方法
DE102015207310A1 (de) * 2015-04-22 2016-10-27 Zf Friedrichshafen Ag Elektronikmodul und Verfahren zum Umkapseln desselben
JP6332720B1 (ja) * 2016-07-06 2018-05-30 Dic株式会社 活性エステル樹脂とその硬化物
KR102278300B1 (ko) * 2016-07-06 2021-07-19 디아이씨 가부시끼가이샤 활성 에스테르 수지와 그 경화물

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Publication number Priority date Publication date Assignee Title
JPH02258831A (ja) * 1988-12-28 1990-10-19 Nippon Steel Chem Co Ltd 封止用樹脂組成物及びその製造方法
JPH05206327A (ja) * 1992-01-27 1993-08-13 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物
DE19845021A1 (de) * 1997-10-03 1999-04-08 Hitachi Chemical Co Ltd Epoxyharzmasse und diese als Einkapselungsmittel verwendende Halbleitervorrichtungen
EP0915118A1 (fr) * 1997-11-10 1999-05-12 Sumitomo Bakelite Company Limited Composition de résines époxydes et dispositifs semi-conducteur qui en sont encapsulés

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02258831A (ja) * 1988-12-28 1990-10-19 Nippon Steel Chem Co Ltd 封止用樹脂組成物及びその製造方法
JPH05206327A (ja) * 1992-01-27 1993-08-13 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物
DE19845021A1 (de) * 1997-10-03 1999-04-08 Hitachi Chemical Co Ltd Epoxyharzmasse und diese als Einkapselungsmittel verwendende Halbleitervorrichtungen
EP0915118A1 (fr) * 1997-11-10 1999-05-12 Sumitomo Bakelite Company Limited Composition de résines époxydes et dispositifs semi-conducteur qui en sont encapsulés

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Title
PATENT ABSTRACTS OF JAPAN vol. 015, no. 007 (C - 0794) 9 January 1991 (1991-01-09) *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 640 (E - 1465) 26 November 1993 (1993-11-26) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10119047B2 (en) 2009-03-27 2018-11-06 Hitachi Chemical Company, Ltd. Thermosetting resin composition, and prepreg, insulating film with support, laminate plate, and printed wiring board, each obtained using same

Also Published As

Publication number Publication date
KR100663680B1 (ko) 2007-01-02
KR20010086441A (ko) 2001-09-12
CN1321179A (zh) 2001-11-07
TWI281482B (en) 2007-05-21
EP1137708A1 (fr) 2001-10-04

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