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WO2001069643A1 - Dispositif de balayage a faisceau de particules chargees - Google Patents

Dispositif de balayage a faisceau de particules chargees Download PDF

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Publication number
WO2001069643A1
WO2001069643A1 PCT/JP2000/001503 JP0001503W WO0169643A1 WO 2001069643 A1 WO2001069643 A1 WO 2001069643A1 JP 0001503 W JP0001503 W JP 0001503W WO 0169643 A1 WO0169643 A1 WO 0169643A1
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WO
WIPO (PCT)
Prior art keywords
deflection
scanning
charged particle
pattern
particle beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2000/001503
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English (en)
Japanese (ja)
Inventor
Kenjiro Yamamoto
Masatsugu Kametani
Yasuhiro Gunji
Hiroshi Miyai
Ryuichi Funatsu
Taku Ninomiya
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
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Priority to PCT/JP2000/001503 priority Critical patent/WO2001069643A1/fr
Priority to JP2001567610A priority patent/JP4186464B2/ja
Publication of WO2001069643A1 publication Critical patent/WO2001069643A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Definitions

  • the present invention belongs to a charged particle beam scanning apparatus that irradiates a charged particle beam to a predetermined position on a sample, and particularly relates to an apparatus that measures a beam irradiation position.
  • a position shift due to an optical system such as deflection distortion which is one of the causes of a position shift of a beam irradiation position, is often corrected.
  • deflection distortion which is one of the causes of a position shift of a beam irradiation position
  • changes in the frequency characteristics of the circuit changes in the waveform due to the filter time constant, distortion of the integrator op-amp or transistor, distortion of the capacitor or resistor, etc.
  • Leakage current, crosstalk, noise (such as switching noise), glitches, and digital feed-through noise are generated.
  • a misalignment occurs. Therefore, in order to measure the displacement of the beam irradiation position due to these factors, it is necessary to measure the beam irradiation position during the deflection operation independently of the measurement of the displacement such as deflection distortion.
  • An example of a deflection control device for generating a beam scanning signal is the charged particle beam scanning type automatic inspection device disclosed in Japanese Patent Application Laid-Open No. 5-258703.
  • Japanese Patent Application Laid-Open No. 5-258703 discloses an analog system in which a deflection circuit is constituted by an analog integration circuit.
  • the signal generated by the method disclosed in the above-mentioned publication is a ramp waveform, and the controllable state quantity is a slope value which is a slope quantity of a ramp wave, and a reset value which is a swingback quantity of the ramp wave. It is.
  • the slope The slope of the analog signal specified by the value is compared with the line size value that is the adjustment value, and the offset specified by the retrace value is compared with the offset value that is the adjustment value. Feedback and keep the scanning signal constant.
  • the ramp portion of the ramp wave is a constant straight line.
  • the distortion of the deflection signal or the displacement of the beam irradiation position is called linear distortion.
  • One method of measuring the linear distortion which is one form of measuring the beam irradiation position during the deflection operation, is described in Japanese Patent Application Laid-Open No. 7-22303. This is shown in an electron beam lithography apparatus using an energy generator.
  • the method for measuring the linear distortion of a line generator described in Japanese Patent Application Laid-Open No. Hei 7-22303 is based on a method in which a set value of a start point register or an end point register is changed in a fixed step, and each step starts from the start of scanning.
  • a linear standard mark arranged at a pitch is scanned by an electron beam using a line generator signal, and a change point of a reflected electron detection signal when the signal crosses the standard mark is used as a trigger for scanning. It shows how to measure the time from the start signal to crossing the mark and the time interval between marks.
  • the charged particle beam scanning type automatic inspection device deflects the charged particle beam and scans it on an inspection object such as a wafer mask to obtain an image showing the physical properties of the inspection object. It is known that inspection is performed by comparing or evaluating acquired image patterns. In the inspection apparatus, improvement in resolution is desired in accordance with a demand for fine defect detection by miniaturization of a design rule of an integrated circuit and the like. For example, the entire inspection of an 8-inch wafer takes an enormous amount of time on the order of several tens of hours, and there is a demand for a reduction in inspection time. The resolution of the inspection device depends on the deflection scanning position accuracy.
  • the inspection time can be shortened by increasing the deflection speed, a high-precision position control technology with a line width or less and a deflection technology that performs high-speed scanning are required in the deflection scanning of the charged particle beam. I have. Further, as the size of the wafer is increased, for example, the inspection area is increased due to the increase of the wafer diameter to 12 inches, the demand for higher speed and higher accuracy is increasing.
  • the required accuracy is, for example, that an electron beam, which is a spot of 0.1 m, is detected at intervals of 0.1 ⁇ m and deflected over a deflection range of several hundred meters.
  • the error is ideally about one tenth of the spot, so the position is determined by an error of 0.01 m or less, that is, an error of tens of thousands or less of the output range. Must be done.
  • the spot and the interval are 0.05 m, double precision is required.
  • the image data capture interval time is 10 ns
  • the use of an analog aperture wave for the deflection scanning signal requires a time stability of 1 ns or less, and the image data capture interval time is also required.
  • time stability with an accuracy of 500 ps or less is required.
  • the method for measuring the linear distortion of a line generator described in JP-A-7-22303, JP-A-63-86517, and JP-A-7-130597 in the electron beam lithography apparatus is described below. Since it measures the transit time between marks, it must be at least Ins or 500 ps or less (frequency 1 GHz or 2 GHz) to satisfy the required accuracy of the inspection device. Force that requires the above time accuracy? However, the element for determining the threshold of the primary (reflected) electron detection signal is also difficult to realize due to the presence of jitter, and has a problem that the measurement accuracy depends on the mark interval. Drawing with a width and mark interval of 0.05 m is difficult to achieve.
  • a comparison is made between one chip formed on a substrate and another chip, that is, a pattern at a distant position. Inspection of semiconductor pattern defects by means of the following: frequency characteristics of the circuit, changes in the waveform due to the filter time constant, crosstalk, noise (such as switching noise), glitches, and digital feedthrough noise Due to the misregistration of specific pixels caused by such factors as above, there is a problem that a false detection that a normal part is determined to be defective occurs, and the sensitivity of the comparative inspection is reduced. In the linear distortion measuring method disclosed in the above publication, the positional deviation due to such factors may not be detected because the positional deviation of each pixel in the inspection apparatus is not measured.
  • a first object of the present invention relates to a beam scanning type inspection apparatus that performs an inspection by scanning a charged particle beam, and relates to a beam deflection scanning position or a detection pixel position during an actual inspection.
  • the present invention provides a method or an apparatus for measuring the positional deviation of an object in a short time with an excellent accuracy exceeding the required accuracy, and correcting the positional deviation by a correction means.
  • Another object of the present invention is to provide an inspection apparatus capable of reducing false alarms and obtaining accurate butterfly information required for a highly sensitive comparison inspection.
  • a specific object of the present invention is to provide a method or an apparatus for measuring a displacement based on image data obtained by actually scanning a charged particle beam in order to solve the above problems.
  • DISCLOSURE OF THE INVENTION The present invention is also to provide a method or an apparatus for correcting a displacement caused by a deflection scanning operation.
  • the present invention is realized in a charged particle beam scanning device by the following means.
  • a charged particle beam scanning device that irradiates a charged particle beam to a predetermined position, one or more registered patterns are drawn on a sample according to physical properties or structural boundaries.
  • the beam is obtained. Measure the irradiation position or displacement.
  • Deflection control means for controlling the beam to be directed to a desired position on the sample, and irradiation of a product generated by irradiating the beam onto the sample with a beam input from the deflection control means.
  • Image acquisition means for acquiring pixel image information by acquiring pixel data by acquiring the pixel data on a predetermined area on the sample by capturing the image data based on the projection timing signal; and It is composed of displacement measurement means for measuring the position or displacement of each pixel obtained by calculating the boundary position on the image based on the image information of the sample including the pattern.
  • the charged particle beam is actually scanned, image data is obtained, and the beam irradiation position or position shift based on the image data can be measured. Deflection scanning position can be measured
  • Pixel data representing the amount of the product at the desired irradiation position is generated from the synchronization signal indicating the irradiation timing of the desired beam irradiation position and the analog electric signal from the deflection control means. It is constituted by pixel data generation means and image information generation means for generating image information by associating the beam irradiation position information obtained from the deflection control means with the pixel data.
  • the position shift measuring means is provided on the sample in at least two regions where the amount of the product is different due to a difference in physical properties or structure from a certain boundary, and The amount of products generated when the irradiation of the beam having the area of is performed on a certain position 1 included in the set of positions including the boundary, and the amount of the product generated in the irradiation area at the position 1 It is determined by the sum of the product of the product of the unit area and the irradiation area of each area in the two areas, and is determined by the distance from the boundary or the position.
  • the relative position 1 from the center position of the beam irradiation area to the boundary position is determined by the size of the irradiation area and the size Calculated with accuracy that depends on the resolution of multi-tone values
  • a boundary pattern position on the acquired image is calculated using a plurality of sets of the boundary position calculating means to perform the calculation, and a pair of the relative position 1 calculated by the boundary position calculating means and the pixel position information 1 included in the acquired image information. It comprises a boundary pattern calculating means, and a shift amount calculating means for calculating a shift amount of each acquired pixel from a desired position based on the boundary pattern position and the registered boundary information.
  • the beam irradiation position can be calculated accurately only by the beam irradiation area being on the boundary, and the beam irradiation position can be calculated based on the image information.
  • the displacement can be measured.
  • the registration pattern boundary is placed at a predetermined position where the measurement is performed, and the actual operation of the device is performed by performing the operation of driving the device or the close operation. Measure the beam irradiation position or displacement in the state.
  • a line image is obtained by beam scanning or slit beam irradiation in a predetermined direction, and this is shifted a plurality of times in a direction perpendicular to the longitudinal direction of the line image.
  • a deflection operation for acquiring the line image is performed.
  • the displacement of each pixel position in the single direction and the displacement of each pixel position in the vertical direction are independently measured at least one of them. It is possible to do this.
  • the measurement is performed in the state where deflection distortion correction, which is a factor other than the displacement caused by the beam scanning operation, is performed, or in the state where the influence of deflection distortion is small.
  • the pattern boundary has one or a plurality of straight lines having a predetermined inclination in accordance with the displacement accuracy with respect to the single direction.
  • the pattern boundary has one or a plurality of straight lines having a predetermined verticality with respect to the single direction.
  • the reference position in the scanning direction can be measured, and the deviation of the entire scanning position can be measured.
  • the pattern boundary has one or more straight lines having a predetermined parallelism with respect to the single direction. This makes it possible to measure the displacement in the direction perpendicular to the scanning direction.
  • the deflection scanning position or a deflection control position or a scanning position deviation correction data corresponding to the time from the deflection scanning start time at which the deflection distortion correction has been performed for the deflection scanning position.
  • a deflection scanning correction unit that receives the correction data, receives a deflection scanning position or the deflection control position, or receives an input of a pixel number or a deflection scanning start signal, and generates correction information for the positional deviation.
  • Deflection / scanning correction information generated by the deflection / scanning correction means and deflection / scanning position information generated by the deflection control means or adding means for digitally or analogously adding the deflection / control position information It consists of.
  • Deflection distortion correction means for performing deflection distortion correction based on a predetermined function, and a position deviation correction coefficient data creating means for correcting a positional deviation corresponding to the deflection scanning position, comprising: The correction coefficient data obtained by adding the coefficient data of the function and the coefficient data calculated by the positional deviation correction coefficient data creating means is provided to the deflection distortion correcting means as a coefficient for determining the form of the function.
  • the deflection scanning position deviation can be corrected without particularly preparing the deflection scanning position deviation correcting means.
  • the displacement measurement or the measurement and the display of the measurement result or the measurement and the reflection of the measurement result to the correction means are automatically performed.
  • misalignment measurement and correction are automatically performed when the setting is changed. It can be performed at high speed and automatically, making it easy for the user to grasp the status, and managing the equipment so that it can always keep the equipment in a highly accurate state. You.
  • the apparatus irradiates a charged particle beam onto a sample to capture information of the sample at a predetermined position, and processes the information to inspect the sample. Constitute.
  • the charged particle beam scanning inspection device makes it possible for the charged particle beam scanning inspection device to measure the beam deflection scanning position or the detection pixel position misalignment at the time of actual inspection with a short time and excellent accuracy exceeding the required accuracy. Can be corrected, and false reports that determine a normal part as a defect can be reduced, and accurate pattern information required for a highly sensitive comparison inspection can be obtained. In addition, even when correction is not performed or cannot be performed, it is possible to predict a false position by making it possible to measure the displacement.
  • the sample is irradiated with a charged particle beam, the information of the sample at a predetermined position is captured, and the first pattern formed at a remote position on the sample and the
  • the position deviation is measured when the inspection condition is changed, and the result is corrected for the deflection scanning position deviation.
  • the correction is performed by giving the image processing means or the image processing means for performing the comparative inspection or both.
  • FIG. 1 is a diagram simply showing an example of the configuration of a charged particle beam scanning type apparatus of the present invention
  • FIG. 2 is a diagram showing details of a charged particle beam scanning type inspection apparatus which is an application example of the present invention.
  • FIG. 3 is a diagram illustrating an example of a scanning sequence of the inspection apparatus
  • FIG. 4 is a diagram illustrating a relationship between a deflection output signal of beam scanning and a typical timing signal.
  • FIG. 5 is a diagram for explaining the relationship
  • FIG. 5 is a diagram for explaining deflection distortion and deflection scanning position deviation.
  • FIG. 6 is a diagram for explaining a deflection scanning position or a method for measuring the position deviation according to the present invention.
  • FIG. 1 is a diagram simply showing an example of the configuration of a charged particle beam scanning type apparatus of the present invention
  • FIG. 2 is a diagram showing details of a charged particle beam scanning type inspection apparatus which is an application example of the present invention.
  • FIG. 3 is a diagram illustrating an example
  • FIG. 7 is a diagram for explaining a method of correcting the positional deviation measured by the present invention
  • FIG. 8 is a diagram illustrating a projection process for correcting distortion of an optical system to make the surface isotropic.
  • the coordinate transformation equation (Equation 1) is expressed by the following cubic equation.
  • FIG. 10 is an equation 3 showing an example of a method of converting the coefficient of the deflection scanning position shift correction function into the coefficient of the deflection distortion correction equation.
  • FIG. 1 shows a simple example of the configuration of the charged particle beam scanning type apparatus in the embodiment of the present invention.
  • the sample 11 is irradiated with the charged particle beam 10, the product generated at that time is taken in as information of the sample 11, the information is converted into pixel data by the image acquisition means 13, and the pixel data is A process for associating with the beam deflection position is performed to obtain image data of the sample 11.
  • the product is a force composed of the example of secondary electrons in Fig. 1. If it reflects the information of the sample, it may be a secondary electron or a reflected electron. It may be a transmitted electron.
  • the image acquisition means 13 determines the beam scanning position and the timing for taking in the information from the deflection control means 14 for deflecting the beam to a predetermined position. Obtain the beam irradiation timing signal 18.
  • Displacement measuring means 1 that holds registered pattern data with one or more physical properties or structural boundaries drawn on sample 11 for the purpose of measuring the displacement of the deflection scanning position
  • the displacement measurement means 15 is the registered pattern data to be held and the image acquisition means.
  • the deflection scanning position can be shifted or arbitrary.
  • the position or displacement of each beam irradiation position or each pixel position is measured.
  • the image obtaining means 13 is composed of a product capturing means 12, a pixel data generating means 103, and an image information generating means 104.
  • the product capturing means 12 captures a product generated by irradiating the sample with the beam, and converts the product into an analog electric signal reflecting the amount of the product.
  • the pixel data generating means 103 receives the desired signal from the deflection control means 14 based on a beam irradiation timing signal 18 indicating the irradiation timing of a desired beam irradiation position and the analog electric signal.
  • the pixel data representing the amount of the product at the irradiation position is generated.
  • the image information generating unit 104 generates image information by associating the beam irradiation position information obtained from the deflection control unit 14 with the pixel data. In this way, the image acquisition means acquires image information from which the boundary position such as physical properties and structure on the sample can be measured from the image information generated above.
  • the displacement measuring means 15 comprises a boundary position calculating means 105, a boundary pattern calculating means 106 and a displacement amount calculating means 107.
  • Boundary position calculator In step 105, pixel data obtained by converting the amount of the product obtained from the image acquisition means 13 into a predetermined multi-gradation value is used to determine the relative distance from the center position of the beam irradiation area to the boundary position. The position is calculated with an accuracy that depends on the size of the irradiation area and the resolution of the multi-tone value.
  • the distance from the boundary is determined by the sum of the product of the irradiation area and the amount of product per unit area of each of the at least two regions in the irradiation region at the position 1. Or use what is determined by location.
  • the boundary pattern calculation unit 106 calculates a boundary pattern position on the acquired image using a plurality of pairs of the relative position calculated by the boundary position calculation unit and the pixel position information of the acquired image information. . Further, the shift amount calculating means 107 calculates a shift amount of each acquired pixel from a desired position based on the boundary pattern position and the registered boundary information. In this way, the displacement measuring means measures the displacement of the beam deflection position or the pixel position based on the image information.
  • the position shift information is transferred from the position shift measuring unit 15 to the deflection position correcting unit 17 attached to the deflection control unit 14. Realization. Further, in the case of an inspection device, the displacement can be corrected by correcting image data by image processing at the time of a test. In this case, the displacement information is described later. To the image processing unit of the inspection apparatus shown in FIG.
  • FIG. 2 is a detailed embodiment of a charged particle beam scanning type inspection apparatus which is an application example of the embodiment of the present invention.
  • the present invention relates to the inspection device Is the force shown? It can also be applied to all devices that perform beam scanning by deflecting a beam from a beam light source, such as a drawing device and a microscope (SEM).
  • a beam light source such as a drawing device and a microscope (SEM).
  • the control devices shown in FIG. 2 are roughly divided into an electron optical system device 20, an image processing system device 21, a deflection control system device 22, and a stage control system device 23.
  • the former three and the height sensor 24 are connected to the host control CPU 26 via the bus 25 and are controlled collectively.
  • the stage control system 23 and the host control CPU 26 are connected to the system control CPU 28 via LAN 27, and control relating to the operation of the entire system is performed.
  • the image acquisition means 13 is an image processing system 21
  • the displacement measuring means 15 is an upper control CPU 26 or a system control CPU 28
  • the deflection control means 14 is The deflection control device 22 and the sample stage control means 16 correspond to the stage control device 23.
  • the electron optical system device 20 controls various power supplies and currents and controls the state of the electron beam.
  • the beam 30 from the electron gun 29 is accelerated, and the lens axis of the focusing coil 38 is used to adjust the optical axis of the electron beam 30 irradiated on the wafer 31, and focus and astigmatism.
  • Adjust and control irradiation intensity Enlargement / reduction of the beam diameter related to the size and resolution of the inspection defect is performed by a focus stop, and the irradiation intensity is controlled by a beam current, an acceleration voltage, a retarding voltage, and the like.
  • the beam current is measured by a current value flowing into the Faraday cup 37 when a voltage is applied to a blanking electrode described later.
  • the detector 32 takes in the secondary electrons generated from the wafer 31 deflected by the wind filter deflector 33, converts the amount of secondary electrons into grayscale digital information, Send to device 21.
  • the image processing system device 21 detects the type and position of the defect formed on the wafer by comparing and inspecting the information of the pattern formed on the substrate 31. I do. At this time, the system control CPU 28 directly receives the defect data, displays the inspection result, and performs control according to the operation of the operator. In the present invention, the system control CPU 28 holds the data of the known figure, controls the image acquisition of the figure, compares the obtained image with the known figure data, and performs the deflection scanning position shift. Measurement.
  • the deflection control system 22 is used for the image processing system 21. Transmitting a signal.
  • the evening signal is specially designated as a beam irradiation timing signal 18.
  • the product taking-in means 12 in FIG. 1 corresponds to the detector 32.
  • the stage control system device 23 controls the position and the moving speed of the stage 39, that is, the sample such as the wafer 31 to be inspected, based on the stage position information by the laser interferometer.
  • the deflection control system device 22 first turns on / off the blanking electrode 34 so as not to irradiate the wafer with the electron beam 30 except at the time of inspection. In addition, it controls a deflector 35 for performing astigmatism correction iiiij control and beam deflection control, and a moving focus coil 36 for performing focus correction.
  • the deflector 35 is composed of an eight-pole plate or an electrostatic deflector having a greater number of poles, and deflects the electron beam 30 by voltage control to adjust the beam irradiation position on the wafer 31. Control.
  • the deflection control system 22 performs a correction operation for deflection distortion, drift, etc., a tracking operation for the stage position, and a deviation correction for the deflection scanning position according to the present invention. This is reflected in the control value given to the deflector 35.
  • the present invention relates to a method in which the sample in which the registration pattern is drawn, the method described in the position displacement measuring means, and a measurement program for performing the same processing as the method. 1
  • Low cost if prepared for the upper control CPU 26 or the system control CPU 28 in the figure. And can be easily implemented.
  • the present invention can be easily realized even for a device without an image acquisition device such as a drawing device by attaching a device for acquiring an image as shown in FIG.
  • FIG. 3 is a diagram for explaining an example of a scanning sequence of a charged particle beam scanning type apparatus and an outline of a comparative inspection of the inspection apparatus shown in FIG. 2.
  • Fig. 3 (a) and (b) show examples of the scanning method
  • (c :) and (d) show examples of the stage moving method
  • (e), (f) and (g) show examples of the comparison method.
  • the scanning sequence should be determined based on the relationship between the user's requirements, the electrical characteristics of the inspection object, and the required accuracy, and the methods shown in the figures may be combined or other scanning methods may be used.
  • measurement can be performed in any scanning sequence, and therefore, measurement can be performed by a scanning method that is close to the actual operation state of the apparatus.
  • the scanning method 40 is a method in which scanning is performed in one direction, and the dotted line portion is a return line portion and blanking is performed so as not to irradiate the beam to the wafer.
  • Scanning method 41 is a method of scanning in the reciprocating direction, and is suitable for high-speed operation because return and blanking are unnecessary.However, there is unevenness in the forward and return paths, so the position accuracy is reduced. Inferior to 40. When this method is used, in the present invention, independent position deviation detection or correction is performed in the forward path and the return path.
  • FIG. 3 (c) shows the trajectory 42 of the scan on the wafer in the continuous stage movement method
  • FIG. 3 (d) shows the trajectory 43 of the scan in the step-and-repeat method.
  • an image for the deflection area is acquired at a time while the stage is stopped, and the stage moves to the next inspection position and the image for the next deflection area is acquired.
  • the images of the plurality of deflection areas are joined to obtain an image of the wafer.
  • the beam movement distance above the laser beam per scan and the stage movement for one scan time By matching the distances, a continuous image can be obtained without stopping the stage without deviating from the deflection area.
  • the beam scanning direction is performed in the reciprocating direction of the stage, and the inspection is performed on the entire surface of the stage.
  • the stage continuous movement method with no stage step operation time enables faster and continuous inspection, but deflection control or stage control so that the target position does not deviate from the deflection area.
  • the stage moving direction and the beam scanning direction may be directions in which comparative inspection can be performed. Since the chip pattern is rectangular, it is preferable to perform scanning in the chip pattern direction. In this case, the stage movement direction is basically substantially orthogonal to the beam scanning direction. From the viewpoint of stage movement accuracy, it is better to operate with one axis alone than with two axes. For this reason, in an actual inspection device, the direction of the chip, that is, the direction of the eno, is also adjusted to the stage axis.
  • the scanning method 40 and the step-and-repeat method (method for stopping the stage) when the deflection distortion correction described later is performed in advance, and when it is negligible and you want to avoid mixing of stage errors.
  • the method is suitable. However, if the registration pattern falls within the deflection area, there is no need to move the stage at all.
  • the error of each factor can be separated by performing the measurement in combination thereof, so that the measurement accuracy can be improved, and the deflection distortion and the stage error can be evaluated.
  • FIG. 3 (e) is a diagram for explaining an example of pattern defect inspection. Return Defect inspection is performed by comparing pattern images. For comparison, there are a method of comparing the design data and the pattern on “ ⁇ ⁇ ”, “turn”, and a method of comparing the image information at the position where the same pattern is drawn on “ ⁇ ⁇ ”.
  • the comparison unit is a cell unit
  • the former is a device in which minute cells such as memory are arranged regularly, and the latter is a non-repetitive complex pattern that is not repeated in the entire chip such as CPU and ASIC. Corresponds to the one formed.
  • the stage control device and the deflection control device scan the stripe 65 in conjunction with each other, and the image processing device performs the line scan. After the image of the pin 58 is acquired, the image is compared with the already acquired line 57, and a defect is determined based on the difference, and this is performed over the entire cell. Therefore, in the deflection scanning, at least the positional accuracy of the lines 57 and 58 must be ensured in the cell comparison.
  • the scan of the line 66 is performed for the comparison inspection of the chip 59 and the chip 60, and the comparison of the line 61 and the line 62 is performed. Is performed.
  • the inspection area on the wafer in the stage movement direction is called a stripe
  • the inspection area on the wafer of one scan is called a line.
  • the cell-to-cell spacing is at most 10 m
  • the current chip width is about 3 x 10 ⁇ 4 m at maximum
  • the chip comparison is the worst in simple comparison compared to cell comparison inspection. A 3000 times position accuracy is required.
  • chip comparison a position error and a chip position rotation error are generated depending on a pattern drawing method on a wafer such as a drawing on a step.
  • the actual location of the chip is on the chip 63 and the line 62 is on the line 64, so the chip comparison inspection can be performed simply by a straight line scan like the stripe 66.
  • Fig. 3 (f) and (g) show the comparison of lines 57 and 58 in cell comparison and line 61 and line 62 in chip comparison, respectively, in the case of misalignment. Is explained.
  • the black circle in the figure indicates the center position of each pixel.
  • the position of the line must be accurately corrected. It is difficult to completely eliminate the force error.
  • the relative position error (deviation) 70 on the cell pattern at each acquired line position is small.
  • the measurement and correction of the deflection scanning position or the displacement are indispensable as in the embodiment of the present invention.
  • Fig. 4 (a) shows the concept of the deflection control signal in beam scanning during one scan, and is a diagram illustrating the relationship between an analog output showing an example of the deflection control signal and a typical timing signal.
  • the deflection output signal indicates the force for outputting the control signal for the X axis and the Y axis in the direction perpendicular thereto, and the figure shows one axis.
  • the analog output in the X-axis direction or the ⁇ -axis direction generally takes the shape of a ramp wave 44.
  • the deflection control signal In order to equalize the distance on the sample between them, the deflection control signal must be a straight line as shown by the ideal waveform 45 shown by the broken line in FIG. 4, but the ramp wave 44 is accurate. Does not become a straight line. For this reason, the start signal and the end signal shown in FIG. 4 (a) may be specified in order to use a region close to a straight line in the waveform of the ramp wave 44.
  • Typical signals necessary for image acquisition include an image acquisition start signal 51, an image acquisition timing signal 46, which is a synchronization signal, and an image acquisition enable signal 47, and the like.
  • the beam irradiation timing signal 18 in FIG. 1 specifically shows these signals, and in particular, the image capture timing signal 46 corresponds as a representative signal.
  • the signals shown in this explanatory diagram are input to the image processing system device 21 in FIG. With these signals, when the image capture enable signal 47 is active, wafer information can be captured as pixels at the rising edge of the image capture timing signal, and a hapattern image can be obtained.
  • the image capture enable signal 47 when the image capture enable signal 47 is active, wafer information can be captured as pixels at the rising edge of the image capture timing signal, and a hapattern image can be obtained.
  • the width 4.9 of the ramp wave in Fig. 4 (a) (more precisely, the time width of the use area of the ramp wave) is defined by the capture interval of one pixel and the number of pixels in one scan.
  • the height 50 of the pump wave (more precisely, the potential difference in the area where the ramp wave is used) is defined by the control voltage value for the pixel spacing on the wafer, the distance on the wafer, and the number of pixels in one scan.
  • Fig. 4 (b) shows a curve 1111 in which a part of the ramp wave in Fig. 4 (a) is enlarged, a ramp wave 48 with a larger slope, and the pixel position in each case. Indicates 108 and 109.
  • FIG. 4 (b) shows that the pixel position 109 in such a highly distorted ramp wave is This conceptually shows that the deflection scanning position shift is larger than the pixel interval 108 in the ramp wave 111 with relatively small distortion.
  • the slope of the ramp wave is large, and deflection scanning position shift is a serious problem. Such a displacement can be measured and corrected by the present invention.
  • the deflection scanning position shift amount of interest in the embodiment of the present invention is such that when the width 49 and the height 50 of the ramp wave change, the state of the distortion of the ramp wave changes. Affected. Changes in the width 49 and the height 50 of the ramp wave are caused by changing the sample, changing the scan direction, changing the capture interval, the number of pixels, and changing the pixel interval setting. The measurement and correction of the scanning position deviation are performed every time such setting conditions are changed, so that high accuracy can be always maintained.
  • FIG. 4 (c) shows the grid waveform 68 of the digital deflection control output signal 53, the crosstalk waveform 69 of the analog deflection control output signal, and the pixels when they occur.
  • FIG. 4 is a diagram illustrating a position 1 110. Since the digital method uses a DA converter for the output of the control waveform, it causes local distortion called glitch or digital feedthrough noise depending on its characteristics. This distortion is noise generated in a very short time on the order of pico to nanosecond, and becomes more problematic during high-speed scanning. Also in the analog system, local distortion such as the crosstalk ramp waveform 69 is affected by crosstalk from switching elements and digital signals, and sneak noise from all signals. May cause.
  • a deflection scanning position shift 54 occurs only in a certain specific pixel. Because grid and crosstalk are caused by certain situations, they are reproducible for each scan and tend to occur at the same pixel location. Therefore, such a displacement can be prevented by the present invention. It is possible to measure and correct the deflection scanning position deviation. However, similarly to the distortion shown in FIG. 4 (b), the waveform 68 affected by glitch or digital feedthrough noise or crosstalk can be changed by changing the setting. Change. Therefore, as described above, it is desirable that the measurement and correction of the deflection scanning position in the embodiment of the present invention be performed every time the setting condition is changed.
  • FIG. 5 is a diagram for explaining the deflection distortion and the deflection scanning position shift focused on in the present invention.
  • distortion occurs at the beam irradiation position in the deflection area.
  • the distortion is caused by an uneven distribution of electric or magnetic fields on the beam path.
  • the main causes of the distortion are the distortion of the beam deflection position with respect to the control voltage caused by the non-uniformity of the deflector electric field, the distortion caused by the electric field distortion of the retarding voltage, the distortion inside the coil, and various other coils or electrodes. Distortion due to the magnetic field and electric field of the lens, and the magnetization and charging of each part of the mirror.
  • the optical system distortion can be measured by using a reference wafer and calculating the difference between the target wafer position and the actual irradiation position during scanning in the deflection area.
  • a reference point where the mark positions are arranged uniformly is used to measure the position of a predetermined position on the minimum 9 points of the wafer.
  • a coordinate conversion equation such as Equation 1 shown in FIG. 8 is obtained, which shows the correspondence between the control target position and the actual beam position in the entire deflection control area.
  • Equation 1 is a coordinate transformation equation expressed by a cubic equation that performs a projection process for correcting the distortion of the optical system to make the plane isotropic.
  • the distortion of the above optical system is represented by a cubic equation approximation, as represented by barrel-type and pincushion-type distortion.
  • the correction can be performed by performing the calculation of the above-mentioned conversion formula 1 which is represented by a target conversion formula and makes the target position correspond to the control value to the deflector.
  • the mark used at this time measures the relative relationship between the line position and the mark on the wafer, and as shown in Fig. 5 (b), to reduce the influence of the deflection scanning position shift.
  • a cross shape is mainly used.
  • the deflection area 76 before deflection distortion correction shown on the left side of FIG. 5 (a) is a diagram that visually shows the deflection distortion and statically sets the target position of the square area in the deflection area.
  • the line 73 is enlarged and the center position of the pixel is schematically indicated by a black circle, it is as shown in the line 74 before the deflection scanning position shift correction in FIG. 5 (c).
  • a deflection scanning position shift such as the line 74 shows the same shift regardless of the position in the deflection area 77. This is measured according to the present invention, and by performing deflection scanning position correction, the pixel interval becomes uniform as in line 75. In order to accurately correct the deflection scanning position shift, it is necessary to simultaneously correct and adjust focus and astigmatism in addition to the deflection distortion correction.
  • FIG. 6 shows a method for measuring the deflection scanning position or the displacement in the embodiment of the present invention.
  • FIG. 6 (a) shows the detector output 80 when the beam spot 78 crosses the pattern boundary 79 drawn on the wafer when the beam spot 78 is circular.
  • the density difference 81 of the detector output 80 differs depending on the physical characteristics of the drawn figure or the depth of the step. Therefore, the present invention measures the deflection scanning position.
  • the figure used for the image processing may use a plurality of processes with different shadings, and may use a three-dimensional drawing technique. When the beam spot is located on the boundary, the degree of overlap with the boundary can be determined based on the density, so that accurate position measurement can be performed.
  • the position is accurately measured.
  • the maximum value of the gray level difference is measured before and after passing through the pattern boundary, and an intermediate value indicates that the center of the beam spot is located on the boundary center as shown in the figure.
  • the edge of the reference pattern boundary may itself change smoothly with respect to the deflection position. In such a case, the correspondence between the deflection position near the pattern boundary and the shading should be measured in advance. To avoid this, the edge of the reference pattern boundary should be sharpened.
  • Fig. 6 (a) The right figure shows the detector output when the beam spot 78 crosses the pattern boundary 79 at a certain angle. Beam position from pattern boundary If the angle is known in advance, even when the pattern boundary described later has a certain inclination with the deflection scanning direction, the beam is deflected by the shading caused by the overlap between the beam spot and the boundary. Position can be measured accurately.
  • the slope is determined by a statistical method by measuring the boundary with a plurality of pixels. The angle can be calculated. Further, it is possible to measure the position of each pixel by knowing the distance from the calculated straight line from the density of each pixel measured.
  • Fig. 6 (b) shows the case where a pattern image is obtained by moving vertically to the deflection scanning direction.
  • the significance of the pattern boundary 83 perpendicular to the deflection scanning direction is shown.
  • Figure is an explanatory diagram for explaining the measurement principle.
  • the black circle in the figure indicates the center position of the pixel, and does not correspond to the actual beam spot diameter.
  • the pattern boundary 83 makes it possible to measure the fluctuation error 82 of the entire line due to the fluctuation of the synchronizing signal and the like from the deviation of the deflection scanning position and to measure it with high accuracy.
  • the pattern boundary 83 is displayed as the acquired image boundary 89.
  • the pixel positions are evenly arranged.
  • the data obtained by inverting the boundary 89 with a line symmetry with respect to the boundary 83 is the position of each pixel. It is calculated as The deflection of the entire line in the direction perpendicular to the deflection scanning direction is obtained by acquiring an image using this method and a pattern boundary that has a large inclination with respect to the deflection scanning direction described later. It can be measured by a method that overlaps the time registration pattern. The swing of the entire line obtained by this measurement is caused by the positioning accuracy of the deflection control device when the above-mentioned stage movement method is step-and-repeat.
  • the deflection position at which scanning is performed is always the same, and this is due to the stage accuracy.
  • the positional deviation due to the fluctuation of the entire line due to the deflection control is often extremely small to a negligible degree compared to the deviation of each pixel in the deflection scanning positional deviation.
  • FIG. 6 (c) shows the significance of the figure boundary 85 parallel to the deflection scanning direction.
  • the deflection scanning position deviation in the direction perpendicular to the deflection scanning direction can be measured. Since the deflection control signal in the deflection scanning direction and the deflection control signal in the direction perpendicular to the deflection scanning direction are often generated using independent circuits, it is significant that the deflection scanning position or the displacement can be detected independently.
  • the figure boundary 85 is displayed as the acquired image boundary 90. The position of each pixel is data that is inverted in line symmetry with respect to the figure boundary 85.
  • Correction memory When there is a correction means such as a pixel, the pixel at a certain position is deliberately shifted as shown in pixel 84 in the figure, and the correction position and the deflection position of the correction means such as a memory address are measured. Can be formed.
  • this method is combined with the above-mentioned method for calculating the inclination of the registered pattern, it is not necessary to know the exact position and inclination of the registered pattern, and to measure and correct the deflection scanning position or positional deviation. Becomes possible.
  • the upper part of the figure shows the positional relationship between the pattern boundary and the line in two ways. The upper part shows the case where most of the pixels on one line overlap the butter line boundary, and the lower part shows the two lines.
  • the line spacing is almost equal to or smaller than the beam spot diameter, and as shown in the figure, if measurement is performed over multiple lines, the pixel and pattern boundary As shown in Fig. 6 (d), the pattern boundary has a certain inclination with the deflection scanning direction, so that the deviation of the deflection scanning position can be accurately measured for each pixel. As shown in the figure. Since the same pixel is measured more than once on the pattern boundary 87, which has a larger slope than the turn boundary 86, the averaging process can be used to determine the effect of the edge on the pattern boundary and the edge described above. Influences such as tilt error of the line and swing of the whole line can be reduced, and measurement accuracy is high.
  • the line interval is almost the same as the beam spot diameter, and if the measurement accuracy is 1 pixel or less, the inclination is sufficient if an angle of 45 degrees with the deflection scanning direction is sufficient. ?
  • the deflection scanning position deviation should be measured using a pattern having a slope corresponding to the required accuracy. Since the curve of the image boundary 88 obtained from the pattern boundary 86 includes the influence of the above-described deviation in the deflection scanning direction of the entire line and the deviation of the deflection scanning position in the vertical direction, the curve at the same time is perpendicular to the deflection scanning direction. It is possible to calculate the deflection scanning position deviation only in the deflection scanning direction by measuring the deflection scanning position deviation in the direction and canceling the deviation by calculation.
  • the registration pattern consists of a straight line in the deflection scanning direction, a direction perpendicular thereto, and a predetermined size. It is ideal to combine straight lines with different slopes. However, if the fluctuation of the entire line can be neglected, the vertical straight line may be omitted, a straight line having a small inclination may be used, or the lines may be independently arranged. As shown on the right side of the figure, the misalignment is caused by the overlap of the pattern boundary and beam spot described above with respect to the ideal deflection direction (X direction) and its vertical (y direction) deflection position. It is calculated from the following.
  • the value of the grayscale data displayed as the acquired image boundary 88 represents the distance of each pixel from the pattern edge caused by the fact that a certain pixel is shifted in the deflection direction.
  • the deflection scanning position and displacement in the deflection direction are calculated based on this data, the inclination of the pattern that may be given or calculated, and the position of the deflection position y of each line.
  • e) shows an example of a known figure combining the above pattern boundaries. As described above, displacement can be measured by a right-angled triangle having sides parallel to the deflection direction and its vertical direction, but having multiple pattern boundaries reduces errors. And improve accuracy. There are two methods: one is to cross multiple pattern boundaries in one line, and the other is to continuously arrange multiple patterns and scan continuously. By drawing the combined figure as shown on the left side of the figure, the deflection scanning position deviation can be measured accurately with a single sequence.
  • Figure 6 (f) shows an example of a figure pattern that roughly measures the deflection scan position shift.
  • the measurement accuracy depends on the deflection scanning accuracy, when moving the stage, the stage accuracy, and the position accuracy of the entire line. Therefore, the measurement accuracy is inferior to the measurement method described above.
  • An object of the present invention is to measure the deflection scanning position shift by actually measuring the image information of the pattern registered as described above. It is hoped that the composition of the pattern provided will have a form suitable for the purpose. The deflection scanning position or the displacement can be accurately measured by the method described above.
  • FIG. 7 is a diagram for explaining an outline of a method of correcting a deflection scanning position shift measured in the present invention. This part is shown as deflection position correcting means 17 in FIG.
  • the deflection scanning position shift is caused by dynamically deflecting the beam. Therefore, the deflection scanning position shift can correspond to a position in one line, as suggested in FIG. Therefore, it is appropriate that the deflection scanning position deviation correcting means input signal 95 of the deflection scanning position deviation correcting means 92 in FIG. 7 (a) is a signal representing a relative position from a certain reference position in the line. It is.
  • the deflection scanning position shift correction means input signal 95 is, for example, data based on a pixel number as a signal indicating a pixel position or a signal indicating a deflection distance from a certain reference position in one line. Then, the deflection scanning position or data calculated based on the deflection control signal can be used.
  • the deflection scanning position deviation correcting means input signal 95 Is a signal corresponding to the address of the memory.
  • the resolution and correction accuracy of this method are determined by the number of bits of the memory address signal and the number of bits of the correction data, respectively. In this method, since the value stored in the memory is the correction value, it can be corrected even if there is a local displacement, and is the most effective correction means.
  • the memory circuit needs to prepare a control signal generation part, that is, one that corrects the displacement in the X-axis direction (scanning direction) and one that corrects the displacement in the Y-axis direction? X-axis direction (scanning direction) depending on the relationship with the accuracy Only one that corrects the positional deviation may be used, or a plurality of memory circuits for correction may be prepared in another control circuit.
  • the address of the memory can be specified by a method corresponding to only one of the X coordinate or the Y coordinate, and the X and Y coordinates. There is a method to correspond to both two-dimensional positions.
  • Equation 3 shown in FIG. 10 is an equation showing an example of a method of converting the coefficient of the deflection scan position deviation correction function into the coefficient of the deflection distortion correction equation, and shows a case of a two-variable and cubic equation.
  • the deflection scanning position shift correction function happens to have the same form as the deflection distortion correction function shown in Equation 1 and performs different types of calculations.
  • the input variables are different, and in the case of static distortion such as deflection distortion, the input variable was the deflection area coordinates, that is, the deflection position (x0, y0), whereas the deflection scanning position deviation correction In this case, the input variable is the relative position (Xs, ys) from the reference position in the line.
  • the deflection scanning position displacement measurement and correction data generation means which is the upper control system
  • 96 Data representing the amount of correction corresponding to the input signal 95 of the displacement correction means is created, and the input signal is used as an address, and the data representing the amount of correction is written into memory as correction data 97.
  • the deflection scanning position deviation measurement and correction data generation means 96 which is a higher-level control system, statistically processes the position deviation amount and calculates a predetermined approximate expression as shown in Expression 3. Find the coefficient and correct the coefficient By giving the data 97 to the deflection scanning position shift correcting means 92 in advance, the position shift measurement result is reflected on the correcting means.
  • the deflection scanning position shift correcting means 92 may be constituted by an analog circuit such as a function generator circuit for creating a correction signal waveform or a combination circuit of filter circuits.
  • the deflection scanning position shift correction means input signal 95 is a line start signal, and the higher-level control system, the deflection scanning position shift measurement and correction data generation means 96, Using the simulation model of the circuit, the setting parameters of the circuit are calculated, and the correction data 97 of the circuit is set.
  • the data output by the deflection scanning position shift correcting means 92 represents the correction information for the position shift, and the deflection control signal 91 and the digital or analog signals are added to the adder circuit 93 in an analogous manner.
  • a scanning signal 94 in which the deflection scanning position deviation is corrected can be obtained.
  • the deflection control signal 91 corresponds to a deflection position signal if the deflection distortion or the like is not corrected.
  • the deflection scanning position deviation correcting means 92 uses the relative position in the line for its input, the deflection scanning position deviation correction means 92 performs an operation separately from the deflection control signal 91 and performs addition in the final stage. There is a need to do.
  • FIG. 7 (c) shows a modification of the above-described means for realizing the approximate coordinate conversion operation method, in which the deflection scanning position deviation correction means is not prepared as a circuit for performing an operation for all deflection positions in real time.
  • a method for realizing the deflection scanning position deviation correction only by changing the coefficient of the correction operation circuit 99 for the deflection distortion or the like.
  • FIG. 9 shows the conversion operation of the deflection scanning position shift coefficient into the deflection distortion correction coefficient. An example of this is shown in Equation 2. Equation 2 is an equation when the order of the deflection scanning position shift correction function is the third order.
  • Equation 2 The function shown in the upper part of Equation 2 is based on the function form of Equation 3 described above, and represents a coefficient when one variable and cubic equation are corrected.
  • the input value of this function is the relative position (Xs, ys) from the line scanning start position, and the addition of the line scanning start position and the relative position is expressed by the following equation (1). Since it corresponds to the deflection position (X 0, y 0) which is the input of the deflection distortion correction function shown in (2), as shown in the lower side of Equation 2, the deflection scanning position deviation coefficient and the scanning start position are variables. It can be converted to a deflection distortion correction coefficient.
  • the Y direction is omitted in the function in the lower part of Equation 2.
  • the conversion operation means 100 for converting the deflection scanning position shift coefficient into the deflection distortion correction coefficient shown in FIG. 7 (b) receives the deflection scanning start position signal 102.
  • the converted coefficient data output from the conversion operation means 100 is added to the deflection distortion coefficient data and input to the correction operation means 99 for deflection distortion and the like.
  • the deflection calculating means for correcting the deflection distortion etc. 99 receives the input of the deflection scanning position signal 98, and in addition to correcting the static distortion such as the deflection distortion, also performs the deflection scanning position deviation correction at the same time.
  • the scanning signal 94 can be output.
  • the scanning position deviation deflection distortion coefficient conversion operation 100 may be performed in units of one line, and can be performed by a processor without using a dedicated arithmetic circuit.
  • a device having only means by performing the calculation simultaneously by the processor that performs the deflection coefficient calculation, the deflection scanning position can be corrected.
  • the circuit equipped with the deflection distortion correction circuit can perform the deflection scanning position shift correction in the embodiment of the present invention without modifying the circuit.
  • the positional deviation information is transferred to the image processing system, so that the position can be compared at the time of image comparison. It is possible to correct the acquired data using an interpolation method or the like based on the displacement information, and it is possible to reduce false detection of the defect. As described above, it is possible to reflect the result measured by the deflection scanning position deviation measuring means to the correction means, and it is possible to improve the deflection position accuracy or reduce the erroneous detection of a defect.
  • the measurement of the deflection scanning position shift and the setting of the correction data are performed when the scanning state is changed, when the inspection object such as a wafer is replaced, for example, when one pixel is set to 0.1. It is desirable to perform this at the time of changing the accuracy setting of the comparative inspection, such as changing from / m to 0.05, "m. In this case, it is desirable to perform everything automatically and in a short time.
  • the operations that occur during the above-mentioned measurement or correction include the position of the registered pattern for scanning the system control unit, the loading of data at the pattern boundary, and the registered pattern.
  • Loading of the loaded sample into the sample chamber (not necessary if it is already loaded or mounted on the stage), input of scanning conditions, input of measurement execution, correction from system control unit to deflection control unit For example, a transfer of data overnight.
  • an execution confirmation is presented, and the execution is selected. I do. In this case, it is necessary to register the position of the registration pattern to be scanned and the data of the data at the boundary of the pattern in the system control unit in advance.
  • the sample may be already mounted on the stage, and it may be automatically executed at the time of each correction alignment or calibration.
  • the system control unit performs automatic operations such as visually displaying the measurement results, recording the data as history data, and providing data to correction means implemented by image processing or the deflection control device.
  • the inspection apparatus can be managed in a state where it is always maintained with high accuracy.
  • the effects of the embodiment of the present invention are as follows. The following effects can be obtained by measuring the deflection scanning position or the displacement using the image data.
  • the pixel positions of consecutive pixels can be measured with high accuracy.
  • the deflection scanning position or displacement can be measured independently for the scanning direction component and the direction component perpendicular thereto.
  • Position fluctuation of the entire scanning position (line) can be measured independently for the scanning direction component and the component perpendicular to the scanning direction.
  • the beam position can be controlled with high accuracy even at the point where the charged particle beam scanning is being performed.

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Abstract

Lors du fonctionnement effectif d'un dispositif de balayage à faisceau de particules chargées, un faisceau de particules chargées (10) est appliqué sur un échantillon (11) de manière à balayer cet échantillon et à produire des données d'images d'un modèle déposé formé sur l'échantillon. Un dispositif (15) de mesure des différences de positions met en correspondance des données de modèles déposés qu'il contient avec une position de frontière de modèle sur une image calculée à partir des données d'images provenant d'une unité de saisie d'images (13) et il décèle un écart entre les données de manière à évaluer la différence d'une ou de plusieurs positions de balayage avec déviation ou les différences entre des positions arbitraires respectives d'application du faisceau ou des positions respectives de pixels. Les différences entre les positions des pixels respectifs sont corrigées par une unité de correction (17) des positions de déviation associée à une unité de commande de la déviation (14) en fonction des données relatives aux différences de positions transférées par l'unité de mesure (15) des différences de postions.
PCT/JP2000/001503 2000-03-13 2000-03-13 Dispositif de balayage a faisceau de particules chargees Ceased WO2001069643A1 (fr)

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006082714A1 (fr) * 2005-02-02 2006-08-10 Shimadzu Corporation Dispositif d’irradiation à faisceau de balayage
JP2009037772A (ja) * 2007-07-31 2009-02-19 Hitachi High-Technologies Corp 偏向制御回路、及び電子線走査装置
WO2010143266A1 (fr) 2009-06-09 2010-12-16 三菱電機株式会社 Dispositif d'irradiation par faisceaux de particules
JP2010284513A (ja) * 2010-04-27 2010-12-24 Mitsubishi Electric Corp 粒子線照射装置
JP2012000232A (ja) * 2010-06-16 2012-01-05 Mitsubishi Electric Corp 粒子線治療装置および粒子線治療装置の調整方法
WO2012014373A1 (fr) * 2010-07-28 2012-02-02 株式会社 日立ハイテクノロジーズ Dispositif à faisceau de particules chargées
US8212223B2 (en) 2009-06-09 2012-07-03 Mitsubishi Electric Corporation Particle beam irradiation apparatus
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JP7299206B2 (ja) 2017-02-16 2023-06-27 株式会社荏原製作所 電子ビームの照射エリア調整方法および同調整システム、電子ビームの照射領域補正方法、ならびに、電子ビーム照射装置
CN119560357A (zh) * 2025-02-05 2025-03-04 无锡亘芯悦科技有限公司 带电粒子束扫描像差校正方法及其系统
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6145549A (ja) * 1985-07-12 1986-03-05 Hitachi Ltd 荷電粒子線装置
JPS62110247A (ja) * 1985-11-07 1987-05-21 Univ Osaka 電子プロ−ブ装置の高精度位置決め方法及び装置
JPH04269614A (ja) * 1991-02-25 1992-09-25 Nippon Telegr & Teleph Corp <Ntt> パターン位置検出方法及びその実施装置
US5777327A (en) * 1995-12-28 1998-07-07 Hitachi, Ltd. Pattern shape inspection apparatus for forming specimen image on display apparatus
JPH11149895A (ja) * 1997-08-11 1999-06-02 Hitachi Ltd 電子線式検査または測定装置およびその方法、高さ検出装置並びに電子線式描画装置
JPH11160054A (ja) * 1997-12-02 1999-06-18 Jeol Ltd パターン測長方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6145549A (ja) * 1985-07-12 1986-03-05 Hitachi Ltd 荷電粒子線装置
JPS62110247A (ja) * 1985-11-07 1987-05-21 Univ Osaka 電子プロ−ブ装置の高精度位置決め方法及び装置
JPH04269614A (ja) * 1991-02-25 1992-09-25 Nippon Telegr & Teleph Corp <Ntt> パターン位置検出方法及びその実施装置
US5777327A (en) * 1995-12-28 1998-07-07 Hitachi, Ltd. Pattern shape inspection apparatus for forming specimen image on display apparatus
JPH11149895A (ja) * 1997-08-11 1999-06-02 Hitachi Ltd 電子線式検査または測定装置およびその方法、高さ検出装置並びに電子線式描画装置
JPH11160054A (ja) * 1997-12-02 1999-06-18 Jeol Ltd パターン測長方法

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006082714A1 (ja) * 2005-02-02 2008-08-07 株式会社島津製作所 走査ビーム照射装置
JP4555909B2 (ja) * 2005-02-02 2010-10-06 株式会社島津製作所 走査ビーム照射装置
WO2006082714A1 (fr) * 2005-02-02 2006-08-10 Shimadzu Corporation Dispositif d’irradiation à faisceau de balayage
JP2009037772A (ja) * 2007-07-31 2009-02-19 Hitachi High-Technologies Corp 偏向制御回路、及び電子線走査装置
US8212223B2 (en) 2009-06-09 2012-07-03 Mitsubishi Electric Corporation Particle beam irradiation apparatus
WO2010143266A1 (fr) 2009-06-09 2010-12-16 三菱電機株式会社 Dispositif d'irradiation par faisceaux de particules
US8217364B2 (en) 2009-06-09 2012-07-10 Mitsubishi Electric Corporation Particle beam irradiation apparatus
EP2471579A2 (fr) 2009-06-09 2012-07-04 Mitsubishi Electric Corporation Appareil d'irradiation à faisceau de particules
JP2010284513A (ja) * 2010-04-27 2010-12-24 Mitsubishi Electric Corp 粒子線照射装置
JP2012000232A (ja) * 2010-06-16 2012-01-05 Mitsubishi Electric Corp 粒子線治療装置および粒子線治療装置の調整方法
JP2012028279A (ja) * 2010-07-28 2012-02-09 Hitachi High-Technologies Corp 荷電粒子線装置
WO2012014373A1 (fr) * 2010-07-28 2012-02-02 株式会社 日立ハイテクノロジーズ Dispositif à faisceau de particules chargées
US8653458B2 (en) 2010-07-28 2014-02-18 Hitachi High-Technologies Corporation Charged particle beam device
JP2012221594A (ja) * 2011-04-04 2012-11-12 Shimadzu Corp アレイ検査装置およびアレイ検査方法
US8907303B2 (en) 2011-06-09 2014-12-09 Hitachi High-Technologies Corporation Stage device and control method for stage device
JP7299206B2 (ja) 2017-02-16 2023-06-27 株式会社荏原製作所 電子ビームの照射エリア調整方法および同調整システム、電子ビームの照射領域補正方法、ならびに、電子ビーム照射装置
CN111598771A (zh) * 2020-01-15 2020-08-28 电子科技大学 一种基于ccd相机的pcb电路板缺陷检测系统及方法
CN113341656A (zh) * 2020-02-18 2021-09-03 纽富来科技股份有限公司 多射束描绘方法以及多射束描绘装置
JP2025061483A (ja) * 2020-05-19 2025-04-10 株式会社ホロン マルチビーム画像生成装置およびマルチビーム画像生成方法
CN119560357A (zh) * 2025-02-05 2025-03-04 无锡亘芯悦科技有限公司 带电粒子束扫描像差校正方法及其系统

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