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WO2001063359A2 - Procede de formation d'images sur couche mince pour microlithographie utilisant un rayonnement a longueurs d'ondes fortement attenuees - Google Patents

Procede de formation d'images sur couche mince pour microlithographie utilisant un rayonnement a longueurs d'ondes fortement attenuees Download PDF

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Publication number
WO2001063359A2
WO2001063359A2 PCT/US2000/027594 US0027594W WO0163359A2 WO 2001063359 A2 WO2001063359 A2 WO 2001063359A2 US 0027594 W US0027594 W US 0027594W WO 0163359 A2 WO0163359 A2 WO 0163359A2
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Prior art keywords
resist material
silylated
polymer resist
polymer
resist
Prior art date
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Ceased
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PCT/US2000/027594
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English (en)
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WO2001063359A3 (fr
Inventor
David R. Wheeler
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EUV LLC
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EUV LLC
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Filing date
Publication date
Priority claimed from US09/510,726 external-priority patent/US6673525B1/en
Application filed by EUV LLC filed Critical EUV LLC
Priority to AU2001210739A priority Critical patent/AU2001210739A1/en
Publication of WO2001063359A2 publication Critical patent/WO2001063359A2/fr
Publication of WO2001063359A3 publication Critical patent/WO2001063359A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Definitions

  • This invention pertains generally to a method for manufacturing integrated circuits that satisfy narrow design rules and more particularly to an improved thin layer imaging process for photoresist patterning in systems having low radiation flux and highly energetic, strongly attenuated radiation.
  • Design rules of 0.5 ⁇ m are being replaced by design rules that require feature sizes of 0.25 to 0.18 ⁇ m and significant effort is presently being put into achieving 0.1 ⁇ m resolution.
  • Integrated circuits are manufactured using lithographic processes.
  • Energy generally electromagnetic radiation, i.e. , light
  • an energy sensitive resist material deposited onto a substrate in such a way that a pattern or image is produced on the resist material.
  • the resist material is developed and the pattern is transferred by etching onto the substrate.
  • the characteristic attenuation length for 13.4 nm radiation (the wavelength desired for 0.1 ⁇ feature size) is on the order of 0.1 - 0.2 ⁇ m for most organic films. If a standard 0.5 - 0.8 ⁇ m thick resist material is required for further processing it will result in a wall profile significantly less than 80 degrees and hence unacceptable critical dimension control.
  • the topography of the substrate surface may also adversely affect the ability of the lithographic process to define features on the substrate.
  • lithographic processes have been developed that do not require that the resist material be exposed throughout its entire thickness. These processes are referred to as surface imaging processes because they define features only in the near surface region of the resist.
  • DOF depth of focus
  • By providing a planarizing layer disposed between the surface of the substrate and the imaging layer it is possible to deposit a uniform imaging layer having minimum thickness, thereby reducing problems associated with variations in DOF.
  • Four basic surface imaging technologies are well known in the art: single layer silylation processes, bilayer processes, trilayer processes, and a variation of the standard bilayer process in which the topmost resist layer is reactive to a silylation reagent.
  • a relatively thick layer of resist material (typically 1.5 - 4 times the height of the highest step on the substrate) is deposited on the surface of a substrate as a planarizing processing layer.
  • a second imaging resist layer is spin cast onto the surface of the planarizing layer.
  • a circuit pattern is produced on the surface of the resist material which is subsequently developed, exposing portions of the underlying planarizing layer.
  • the mask pattern is transferred from the imaging layer directly onto the surface of the substrate by etching through the planarizing layer by standard device processing.
  • Bilayer systems have not found ready acceptance for high volume applications due to their processing complexity and expense.
  • Trilayer resist processes incorporate a highly etch resistant layer i.e.,
  • this intervening hard layer is composed of a sputtered metal or a refractory material such as silicon dioxide, which can either be applied through a conventional chemical vapor deposition processes or by a liquid deposition process wherein silicon dioxide particles or silicon containing polymer, oligomers or clusters are suspended or dissolved in a liquid that desirably evaporates quickly to leave a glass-like layer referred to as spin-on-glass (SOG).
  • SOG spin-on-glass
  • the susceptibility of the silicon dioxide hard mask layer to internal and surface defects caused by agglomeration of silicon dioxide particles or cracking of the hard mask layer due to internal stresses limit the usefulness of this process.
  • the defect density associated with the application of a very thin imaging layer over an often rough middle layer is also a major issue for the trilayer process.
  • Another approach to imaging a circuit pattern onto a substrate involves introducing silicon into the surface layer of a resist material after exposure as described by Coopmans, et al. "DESIRE: A New Route to Submicron Optical Lithography", Solid State Technology, pp. 93-97, June 1987.
  • DESIRE A New Route to Submicron Optical Lithography
  • Solid State Technology pp. 93-97, June 1987.
  • a resist material is coated onto a substrate or an intervening planarizing layer and a circuit pattern is produced on the resist material by a standard UV exposure.
  • the exposed wafer is subjected to silylation by either a gaseous or liquid silicon containing compound such as hexamethyldisilizane (HMDS) or silicon tetrachloride, whereby silicon is incorporated into the polymer.
  • HMDS hexamethyldisilizane
  • the silylating reagent can be incorporated either into the exposed or unexposed regions of the resist material. Silicon which has been incorporated into the resist material will be converted to an etch protective oxide when exposed to the oxygen etch process of the pattern transfer step. Consequently, the silylated regions of the polymer will etch at a significantly slower rate than the unsilylated regions. Exposure to UV light can cause reactive groups to form in the resist material which react selectively with a silylating reagent such as disclosed in U.S. Patent No. 4,751,170.
  • TMAH tetramethylammonium hydroxide
  • a polysiloxane material is employed as a resist material, J. Shaw et al., "Polysiloxanes for Optical Lithography", Solid State Technology, pp. 83-89, June 1987.
  • exposure to deep UV causes the polysiloxane material to crosslink reducing its solubility.
  • the unexposed material is removed by rinsing with an organic solvent.
  • U.S. Patent Nos. 5,286,607, 5,486,424, and 5,545,512 disclose a further modification of the original silylation process.
  • a first resist layer is applied to a substrate and exposed to radiant energy, generally UV radiation, to create an acid reaction product.
  • the irradiated first resist layer is then softbaked and subsequently exposed to a silylating reagent, such as HMDS, for a period of time sufficient for the reagent to penetrate into the resist layer, typically about 2000 - 3000 A.
  • HMDS silylating reagent
  • the resist layer can crosslink.
  • the substrate can now be processed by standard methods, i.e. , applying a second resist layer and forming a circuit pattern by conventional photolithographic and etching steps.
  • the substrate is subjected to a plasma etching step.
  • the plasma etching step is composed of two parts. In the first part, exposed portions of the silicon enriched layer are removed using conventional silicon dioxide etching processes, such as the use of hydrofluorocarbon gases. In the second part, the remaining portions of the second resist layer are removed by an oxidizing etch and the remaining portions of the first silylated resist layer are converted to silicon dioxide. The resulting silicon dioxide layer acts as a mask for etching the substrate.
  • top surface imaging (TSI) processes affords certain advantage in wafer processing
  • TSI top surface imaging
  • the characteristics of the silylated layer largely determine the ultimate lithographic performance of the TSI process.
  • Low silicon content contributes to low etch resistance and difficult CD control during etch.
  • Large pattern distortion caused by swelling associated with incorporation of the silicon-containing reagent can also lead to loss of resolution and poor lithographic performance.
  • incorporation of significant amounts of silylating reagent can lead to reduction of the glass transition temperature (Tg) of the polymer resist material leading to undesirable flow of the silylated resist and silylation in unwanted areas.
  • Tg glass transition temperature
  • a second resist layer must be spun onto the silylated resist layer.
  • the use of a second resist layer to pattern the silylated resist layer can be undesirable in the case of deep or extreme ultraviolet lithography.
  • radiation with a wavelength below about 248 nm is strongly attenuated in organic resist material the resist layer must be relatively thin (typically less than 1000 A) in order to avoid sloping sidewalls.
  • resist layers thinner than 1500 - 2000 A are prone to pin hole and density defects arising from nonuniform coating of the substrate material.
  • the processes themselves are complex with a large number of processing steps.
  • the invention disclosed herein provides a novel method for resist patterning which is particularly advantageous for lithographic systems having low radiation flux and highly energetic, strongly attenuated radiation.
  • an in-situ etch mask is formed by introducing silicon into the resist material following exposure or pattern development, in the manner described above, the process disclosed herein first creates a thin imaging layer with uniform silicon distribution in a bilayer format. Pattern development then incorporates a desilylation step, following exposure, that is self limiting due to the limited quantity of silyl groups within each region of the pattern. Further, the need for a second patterning resist layer is eliminated.
  • An imaging layer containing a resist material preferably a polymeric resist material, that can contain a photoacid either by direct addition or by subsequent reaction and that can react with a silylating reagent, is deposited onto a substrate.
  • the resist material is then exposed to a silylating reagent which penetrates into the resist material. The extent of the penetration will depend upon the silylation conditions, such as silylation time, the type of polymer resist material used, the temperature of the polymeric resist layer during exposure, and the type of silylating reagent used.
  • Silylation can be accomplished either by reaction of the resist with the silylation reagent in the gas phase or in solution, either as a pure liquid or a solution of the silylating reagent in a suitable solvent, desirably a mixture of a nonsolvent and a solvent for the polymer resist material.
  • the silylating reagent can be bifunctional or a combination of single and multifunctional silylation reagents. The crosslinking action of the multifunctional silylation reagents will provide a top layer with a higher glass transition temperature (Tg) and lead to improved imaging and decrease formation of volatile products.
  • a latent image defined by the sum of exposed and unexposed areas on the imaging layer, is then transferred onto the imaging layer by exposing certain portions of the polymer resist material to radiation. Exposure can take place either by direct imaging through a mask or by radiation being reflected from a mask or reticle. Radiation incident upon the silylated resist material results in acid generation which catalyzes cleavage of Si-O bonds to produce moieties that are volatile enough to be driven off in a post exposure bake step, thereby desilylating the exposed areas of the resist material.
  • non-volatile silicon containing fragments are generated by acid catalyzed cleavage of the resist polymer backbone. This cleavage reaction generates base-soluble groups thereby rendering the resist polymer itself base-soluble.
  • the silicon containing moieties cleaved from the resist polymer can be removed by solution development employing a basic solution, for example TMAH or the like.
  • an etching step generally an oxygen plasma etch, removes all the resist material from the de-silylated areas of the resist material and converts the top 50 A of the remaining silylated resist material to silicon dioxide.
  • Figures 1 to 6 are cross-sectional views of a process for resist patterning in accordance with the present invention.
  • the novel process disclosed here for patterning resist material utilizes surface imaging techniques to produce an integrated circuit pattern with submicron features.
  • the process disclosed herein first creates a thin imaging layer with uniform silicon distribution in a bilayer format in one step. Pattern development then incorporates a de-silylation step, following exposure, that is self-limiting due the limited quantity of silyl groups within each region of the pattern.
  • this process produces a thin imaging layer with uniform silicon distribution in a bilayer-like format it is particularly desirable for use with strongly attenuated radiation (e.g., light with a wavelength below about 248 nm) since the complication of imaging through 1500 - 2000 A of resist material is avoided as well as the problems associated with spin coating such thin films. Furthermore, the disclosed process permits both positive and negative tone patterning.
  • strongly attenuated radiation e.g., light with a wavelength below about 248 nm
  • a substrate 110 is coated with a resist material 120 that can be a polymer resist material and can contain a photoacid generator or a photoacid precursor that can generate a photoacid by exposure to an external stimulus such as light.
  • a resist material 120 can be a polymer resist material and can contain a photoacid generator or a photoacid precursor that can generate a photoacid by exposure to an external stimulus such as light.
  • a preferred polymer resist material has the generic structural formula
  • X is pendant to the resist polymer and comprises an acid group such as a carboxylic acid, sulphonic acid or phenol either individually or incorporated into structures such as polycyclic hydrocarbons and aromatic hydrocarbons, and Q is a group such as OH or NH that can react selectively with an organosilicon compound.
  • a polymer resist material having the desired structure is polyvinylphenol.
  • Other resist polymers, known to those skilled in the art can also be used, such as the general class of phenol- formaldehyde polymers commonly known as novolacs.
  • the subscript "m” designates the number of structural units in the polymer backbone and is an integer greater than 1 and preferably ranges from about 20 to 10,000.
  • the subscript "n” is an integer that is equal to or greater than 1 and preferably ranges from 1 to about 3.
  • a photoacid generator is a compound that upon exposure to radiation releases hydrogen ions.
  • suitable photoacid generators include, but are not limited to, 2,6-dinitrobenzyl tosylate, brominated aromatic compounds, onium salts, iodonium salts and non-ionic sulfonate salts.
  • substrate 110 will have received prior processing that will have created surface variations or added parts of semiconductor devices to the top surface of substrate 110.
  • polymer resist material 120 can include a planarizing layer.
  • the second step (Fig. 2) in the method of the present invention is to first softbake the polymer resist material to remove a portion or all of the residual solvent from the resist film; the softbake conditions being dependent upon the resist material and solvent used.
  • softbaking take place at a temperature of about 130 °C for about 120 seconds.
  • the entire surface of resist polymer 120 is exposed to a silicon containing environment, thereby forming a layer of silylated resist material 125 in a single step operation.
  • the silylating reagent be of the general form SiR 1 R 2 R 3 , wherein R,, R 2 , and R 3 are the same or different and are selected from the group including H, CH 3 , and SiR' j R ⁇ R' j , and groups R through R' 3 are selected from the group including H and CH 3 and can be the same or different.
  • Paticularly preferred silylating reagents are dimethylaminodimethyldisilane (DMDS) or dimethylsilyldimethylamine (DMSDMA).
  • a suitable method for performing the silylation step is to expose polymer resist material 120 to an organosilane vapor in a conventional silylation tool for typically about 30-60 seconds at a temperature of up to about 90°C.
  • aminosilanes such as dimethylaminodimethyldisilane (DMDS) or dimethylsilyldimethylamine (DMSDMA) can be used as a silylating reagent.
  • DMDS dimethylaminodimethyldisilane
  • DMSDMA dimethylsilyldimethylamine
  • Other silylating agents known to those skilled in the art can be used.
  • silylation parameters such as time, temperature, and composition of the silylating reagent it is possible to control the depth of silylated layer 125, a condition which is particularly desirable when strongly attenuated radiation such as extreme ultraviolet (EUV) radiation is used for patterning.
  • EUV extreme ultraviolet
  • gaseous silylating reagents are preferred, liquid silylating agents can also be used.
  • multifunctional silylation reagents including bifunctional silylation reagents, are also useful in this capacity.
  • the next step, illustrated in Fig. 3, is to pattern silylated resist material 125.
  • patterning takes place with the aid of mask 130 interposed between an energy source, such as a light source, and silylated resist material 125.
  • Energy 135 (typically light energy) passes through the openings in mask 130 and onto silylated resist material 125.
  • the silylated resist material can also be exposed by means of a reflective mask (not shown), wherein energy/radiation is projected onto the surface of silylated resist material 125 from the reflective mask or reticle.
  • Fig. 4 illustrates the step of forming the desired pattern in silylated resist material 125.
  • the acid catalyzed cleavage of Si-O bonds takes place releasing, it is believed, volatile silanol and siloxane monomers.
  • silylating reagent By changing the character of the silylating reagent, from monofunctional to bifunctional or multifunctional, it is possible to effect the volatility of the silanol and siloxane monomer reaction products. It is expected that the use of a silylating reagent having monosilane groups such as trimethylsilyl would produce more volatile acid catalyzed reaction products. On the other hand, care must be exercised in choosing the silylating reagent in order to ensure that the glass transition temperature (Tg) of the resist material is not lowered to such a degree as to cause pattern distortion in subsequent heat treatment steps.
  • Tg glass transition temperature
  • the entire structure is subjected to a post exposure vacuum bake, Fig. 5, which removes the volatile silicon monomer reaction products from the exposed areas 140 of the resist material. It is preferred that the post exposure bake take place at a temperature of about 120 °C which is generally sufficient to remove the silicon monomer reaction products.
  • the surface of resist material 120 is now composed of regions of silylated resist material 125 and regions 140 from which the silicon has been removed leaving behind unsilylated resist material.
  • the next step, illustrated by Fig. 6, is to etch the resist material by a conventional etching processes, such as an oxygen plasma etch which simultaneously converts the top portion of the silicon enriched layer 125 to silicon dioxide and removes the remaining portions of layer 140, thus exposing the surface of substrate 110 for further processing.
  • a conventional etching processes such as an oxygen plasma etch which simultaneously converts the top portion of the silicon enriched layer 125 to silicon dioxide and removes the remaining portions of layer 140, thus exposing the surface of substrate 110 for further processing.
  • R l 5 R 2 , and R 3 can be the same or different and can be selected from the group including H, CH 3 , and SiR',R' 2 R' 3 .
  • Groups R', through R' 3 can be selected from the group including H and CH 3 and can be the same or different.
  • the reaction products can be either volatile or base-soluble.
  • the post exposure bake step (Fig. 5) with concurrent volatilization of silicon monomer reaction products is replaced by a solution development step employing a suitable basic solvent such as tetramethylammonium hydroxide (TMAH).
  • TMAH tetramethylammonium hydroxide
  • a non-volatile silicon-containing fragment is generated by acid catalyzed cleavage of the resist polymer backbone rather than the side chains.
  • a photoacid generator (PAG) a material that upon exposure to radiation releases hydrogen ions, be the source of the acid.
  • the post exposure bake step (Fig. 5) is replaced by solution development wherein the silicon containing moiety cleaved from the resist polymer can be removed by solution development employing a basic solution, for example TMAH or the like.
  • an etching step generally an oxygen plasma etch, removes all the resist material from the de-silylated areas of the resist material and converts the top 50 A of the remaining silylated resist material to silicon dioxide.
  • This embodiment offers the advantage that the unexposed resist material is not soluble in an aqueous base solvent and thus, it is believed that there will be less tendency to undercut the remaining resist material during the etch step.
  • the solution development step is self-limiting, removing only regions exposed, the silylation byproduct and the base-soluble resist polymer. Further, this embodiment provides for processing in environments where volatile materials are not tolerated well.
  • silylating reagent is represented by SiR ⁇ R ⁇ and R l 5 R 2 , and R 3 can be the same or different and can be selected from the group including H, CH 3 , (CH 3 ) 2 N and SiR ⁇ R ⁇ RV Groups R through R' 3 can selected from the group including H and CH 3 and can be the same or different.
  • the reaction products can be either volatile or base-soluble.
  • silylating reagents are dimethylaminodimethyldisilane, dimethylsilyldimethylamine, and pen- tamethyldisilyldimethylamine. Some or all the fragments I, II, and III are base- soluble so that base solution development can be employed.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention porte sur un procédé de dessin de surfaces de photorésist, particulièrement avantageux pour les systèmes à flux de photons lents et à rayonnement hautement énergétique fortement atténué. On crée tout d'abord une couche mince double de formation d'image répartie uniformément sur le silicium, puis on forme l'image en exposant des zones sélectionnées de la couche silylée au rayonnement. Le rayonnement frappant le photorésist silylé provoque la production d'acide qui, soit catalyse la coupure des liaisons Si-O et produit des fragments suffisamment volatiles pour être éliminés dans une phase ultérieure de cuisson, soit produit une couche de photorésist dont les parties exposées sont désilylées par dissolution dans une solution basique. Le processus s'auto-limite du fait de la quantité limitée de groupes silyle dans chacune des zones du dessin. Après la phase ultérieure de cuisson, on procède à la gravure, généralement par plasma à l'oxygène, pour éliminer le photorésist des zones désilylées de la couche formation d'image.
PCT/US2000/027594 2000-02-22 2000-10-05 Procede de formation d'images sur couche mince pour microlithographie utilisant un rayonnement a longueurs d'ondes fortement attenuees Ceased WO2001063359A2 (fr)

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AU2001210739A AU2001210739A1 (en) 2000-02-22 2000-10-05 Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths

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Application Number Priority Date Filing Date Title
US09/510,726 US6673525B1 (en) 1998-04-07 2000-02-22 Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths
US09/510,726 2000-02-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1014248A3 (fr) * 2000-05-31 2003-07-01 Samsung Electronics Co Ltd Procede de production d'une impression de circuit utilisee pour la fabrication d'un dispositif semi-conducteur.
KR100919350B1 (ko) 2008-04-24 2009-09-25 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808511A (en) * 1987-05-19 1989-02-28 International Business Machines Corporation Vapor phase photoresist silylation process
US5108875A (en) * 1988-07-29 1992-04-28 Shipley Company Inc. Photoresist pattern fabrication employing chemically amplified metalized material
EP0523957A1 (fr) * 1991-07-17 1993-01-20 Japan Synthetic Rubber Co., Ltd. Composition sensible aux radiations
WO1999052018A1 (fr) * 1998-04-07 1999-10-14 Euv Limited Liability Corporation Procede microlithographique a couche mince de formation d'images a l'aide de rayons dans des longueurs d'onde a forte attenuation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1014248A3 (fr) * 2000-05-31 2003-07-01 Samsung Electronics Co Ltd Procede de production d'une impression de circuit utilisee pour la fabrication d'un dispositif semi-conducteur.
KR100919350B1 (ko) 2008-04-24 2009-09-25 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법

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WO2001063359A3 (fr) 2002-01-10

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