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WO2001056090A1 - Dispositif a magnetoresistance et procede de fabrication de celui-ci, base pour dispositif a magnetoresistance et procede de fabrication de celle-ci, et capteur a magnetoresistance - Google Patents

Dispositif a magnetoresistance et procede de fabrication de celui-ci, base pour dispositif a magnetoresistance et procede de fabrication de celle-ci, et capteur a magnetoresistance Download PDF

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Publication number
WO2001056090A1
WO2001056090A1 PCT/JP2001/000475 JP0100475W WO0156090A1 WO 2001056090 A1 WO2001056090 A1 WO 2001056090A1 JP 0100475 W JP0100475 W JP 0100475W WO 0156090 A1 WO0156090 A1 WO 0156090A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
substrate
film
buffer member
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2001/000475
Other languages
English (en)
Japanese (ja)
Inventor
Migaku Takahashi
Satoshi Miura
Masakiyo Tsunoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Tsukishima Kikai Co Ltd
Original Assignee
Sharp Corp
Tsukishima Kikai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, Tsukishima Kikai Co Ltd filed Critical Sharp Corp
Publication of WO2001056090A1 publication Critical patent/WO2001056090A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read

Definitions

  • FIG. 9 is a schematic diagram showing another example of the magnetoresistive sensor according to the present invention.
  • FIG. 10 is a schematic plan view of a sputtering film forming apparatus used for producing a magnetoresistive element according to the present invention as viewed from above.
  • an element having a high MR ratio can be stably obtained, and according to the present invention, an appropriate amount of oxygen is introduced into the structures 105 and 209 as described in the related art. Without doing When high heat is applied to the element during use, oxygen in the structures 105 and 209 starts to move, and the layers 105 and 209 are stacked. As a result, the element according to the present invention can have a high MR ratio and also have excellent thermal stability.
  • the surface layer of the substrate is provided by doving treatment.
  • An example is a form of a driving layer.
  • the magnetoresistive effect element according to the large invention has a high MR ratio and excellent stability ', and must be equipped with two elements: high-resolution and long-term reliability. vd can be provided.
  • a magnetic head FIG. 8
  • a rotational position detection sensor a rotary encoder
  • an element having a spin valve type structure is used. Is applied to a playback head for HDD (Fig. 9).
  • a protective layer 210 may be provided on the spin-valve type structure 209.
  • the protective layer 210 is mainly composed of the antiferromagnetic layer 20. 8 is provided to prevent oxidation.
  • a Ta film is provided as the protective layer 210 is shown.
  • magnetic or electrical influences must be exerted on the structure 209 located below the protective layer 21.0.
  • the protective layer 210 may be made of any material, and its thickness is not limited.
  • Aluminum (A 1) which emits a small amount of gas, is used as the base material, and the newly formed surface is cut off from the atmosphere when the A 1 surface is applied, so that water and impurities in the atmosphere, which are the source of released gas, are taken into the processed surface EX processing and EL processing are widely known as techniques for avoiding this.
  • a high-purity (A r + O:) The method of processing while injecting gas is EX processing [H. Ishimaru; J. Vac. Sci. Technol., A2, 1170 (1984) ZM. Miyamoto et. Al .; J. Vac. Sci. Technol., A4, 2515 (1986)] and EL processing is a method of processing while spraying alcohol on the processing surface in the atmosphere.
  • an Fe Si film was used as the buffer layer 102 a.
  • the film was manufactured by changing the composition ratio of Si contained in this film in the range of 0 to 40 atomic%, and then a structure 105 was formed thereon. Deposition of each layer is performed in a deposition chamber to not more than 1 XL 0- 10 Torr back pressure, manufactured by the method of Supattari ring a predetermined data one rodents preparative high purity A r gas.
  • a stripe pattern arranged in a space on the surface so as to form a stripe pattern is manufactured by, for example, etching to a width of several tens of meters and a length of several mm.
  • a width of one magnetoresistive element 800 When a magnetic field is applied in the (short side) direction, the resistance of the element changes so as to take a local maximum value near the inversion of the magnetic field depending on the magnitude. In other words, the magnitude of the leakage magnetic field applied to the element 800 changes with a constant period due to the rotational movement of the magnetic drum 82. If this change is regarded as a voltage change, a sinusoidal signal is obtained. By using this signal, the rotation of the magnetic drum 820 can be controlled.
  • reference numeral 901 denotes a magnetoresistive element
  • reference numeral 902 denotes a buffer member
  • reference numeral 903 denotes a spin-valve structure
  • reference numeral 904 denotes a hard film
  • reference numeral 905 denotes an MR electrode
  • reference numeral 911 is the reproducing head
  • 912 is the upper shield of the reproducing head, which also serves as the lower magnetic pole (922) of the recording head
  • 913, 914 are insulating films
  • 915 is the reproducing
  • 916 is the substrate
  • 921 is the recording head
  • 922 is the upper ball of the recording head
  • 923 is the coil made of conductive material
  • 924 is the playback.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)

Abstract

L'invention concerne un dispositif à magnétorésistance qui présente une structure du type réseau artificiel ou « spin valve », un rapport MR élevé avec une quantité d'oxygène aussi faible que possible dans une structure multicouche, et une excellente stabilité thermique. Le dispositif à magnétorésistance comporte une structure dans laquelle les couches non magnétiques et les couches ferromagnétiques sont formées sur une base ; ou les couches non magnétiques et les couches ferromagnétiques alternées sont formées sur une base, et une couche non ferromagnétique est formée sur la couche ferromagnétique la plus élevée. Le dispositif est caractérisé en ce qu'un élément tampon est prévu sur la surface, côté base, de la couche ferromagnétique la plus proche de la base ; cet élément est constitué d'au moins un premier élément sélectionné dans le groupe comprenant Si, B, C et Ge, et d'au moins un deuxième élément sélectionné dans le groupe comprenant Fe, Ti, Cr, Mn, Co, Ni, Cu, Zr, Hf et Ta.
PCT/JP2001/000475 2000-01-28 2001-01-25 Dispositif a magnetoresistance et procede de fabrication de celui-ci, base pour dispositif a magnetoresistance et procede de fabrication de celle-ci, et capteur a magnetoresistance Ceased WO2001056090A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000024823 2000-01-28
JP2000-24823 2000-01-28

Publications (1)

Publication Number Publication Date
WO2001056090A1 true WO2001056090A1 (fr) 2001-08-02

Family

ID=18550753

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/000475 Ceased WO2001056090A1 (fr) 2000-01-28 2001-01-25 Dispositif a magnetoresistance et procede de fabrication de celui-ci, base pour dispositif a magnetoresistance et procede de fabrication de celle-ci, et capteur a magnetoresistance

Country Status (1)

Country Link
WO (1) WO2001056090A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003086866A (ja) * 2001-09-13 2003-03-20 Anelva Corp スピンバルブ型巨大磁気抵抗薄膜の製造方法
US7418777B2 (en) 2000-03-29 2008-09-02 Tdk Corporation Method on manufacturing spin valve film
JP2009055049A (ja) * 2008-10-06 2009-03-12 Canon Anelva Corp マルチチャンバ成膜装置
US7813088B2 (en) 2005-09-27 2010-10-12 Canon Anelva Corporation Magnetoresistance effect device
US8319263B2 (en) 2004-03-12 2012-11-27 Japan Science And Technology Agency Magnetic tunnel junction device
US8394649B2 (en) 2004-09-07 2013-03-12 Canaon Anelva Corporation Method of production of a magnetoresistance effect device
JP2015082633A (ja) * 2013-10-24 2015-04-27 日本電産サンキョー株式会社 磁気抵抗素子、磁気センサ装置および磁気抵抗素子の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5432734A (en) * 1993-08-30 1995-07-11 Mitsubishi Denki Kabushiki Kaisha Magnetoresistive element and devices utilizing the same
EP0674327A1 (fr) * 1994-03-24 1995-09-27 Nec Corporation Film à soupape de spin
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
JPH0992906A (ja) * 1995-09-22 1997-04-04 Sony Corp 磁気抵抗効果素子及び磁界検出装置
US5796560A (en) * 1995-03-13 1998-08-18 Kabushiki Kaisha Toshiba Magnetoresistive head
US5949622A (en) * 1996-04-30 1999-09-07 Kabushiki Kaisha Toshiba Magnetoresistance effect element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5432734A (en) * 1993-08-30 1995-07-11 Mitsubishi Denki Kabushiki Kaisha Magnetoresistive element and devices utilizing the same
EP0674327A1 (fr) * 1994-03-24 1995-09-27 Nec Corporation Film à soupape de spin
US5796560A (en) * 1995-03-13 1998-08-18 Kabushiki Kaisha Toshiba Magnetoresistive head
JPH0992906A (ja) * 1995-09-22 1997-04-04 Sony Corp 磁気抵抗効果素子及び磁界検出装置
US5949622A (en) * 1996-04-30 1999-09-07 Kabushiki Kaisha Toshiba Magnetoresistance effect element

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7418777B2 (en) 2000-03-29 2008-09-02 Tdk Corporation Method on manufacturing spin valve film
JP2003086866A (ja) * 2001-09-13 2003-03-20 Anelva Corp スピンバルブ型巨大磁気抵抗薄膜の製造方法
US10680167B2 (en) 2004-03-12 2020-06-09 Japan Science And Technology Agency Magnetic tunnel junction device
US9123463B2 (en) 2004-03-12 2015-09-01 Japan Science And Technology Agency Magnetic tunnel junction device
US8319263B2 (en) 2004-03-12 2012-11-27 Japan Science And Technology Agency Magnetic tunnel junction device
US11968909B2 (en) 2004-03-12 2024-04-23 Godo Kaisha Ip Bridge 1 Method of manufacturing a magnetoresistive random access memory (MRAM)
US8405134B2 (en) 2004-03-12 2013-03-26 Japan Science And Technology Agency Magnetic tunnel junction device
US11737372B2 (en) 2004-03-12 2023-08-22 Godo Kaisha Ip Bridge 1 Method of manufacturing a magnetoresistive random access memory (MRAM)
US11233193B2 (en) 2004-03-12 2022-01-25 Japan Science And Technology Agency Method of manufacturing a magnetorestive random access memeory (MRAM)
US10367138B2 (en) 2004-03-12 2019-07-30 Japan Science And Technology Agency Magnetic tunnel junction device
US9608198B2 (en) 2004-03-12 2017-03-28 Japan Science And Technology Agency Magnetic tunnel junction device
US8934290B2 (en) 2004-09-07 2015-01-13 Canon Anelva Corporation Magnetoresistance effect device and method of production of the same
US8394649B2 (en) 2004-09-07 2013-03-12 Canaon Anelva Corporation Method of production of a magnetoresistance effect device
US7813088B2 (en) 2005-09-27 2010-10-12 Canon Anelva Corporation Magnetoresistance effect device
JP2009055049A (ja) * 2008-10-06 2009-03-12 Canon Anelva Corp マルチチャンバ成膜装置
JP2015082633A (ja) * 2013-10-24 2015-04-27 日本電産サンキョー株式会社 磁気抵抗素子、磁気センサ装置および磁気抵抗素子の製造方法

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