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WO1999016843A1 - Agent de polissage, procede d'obtention d'une planeite par voie chimique et mecanique et utilisation de l'agent de polissage pour la planeite d'un substrat semi-conducteur - Google Patents

Agent de polissage, procede d'obtention d'une planeite par voie chimique et mecanique et utilisation de l'agent de polissage pour la planeite d'un substrat semi-conducteur Download PDF

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Publication number
WO1999016843A1
WO1999016843A1 PCT/DE1998/002868 DE9802868W WO9916843A1 WO 1999016843 A1 WO1999016843 A1 WO 1999016843A1 DE 9802868 W DE9802868 W DE 9802868W WO 9916843 A1 WO9916843 A1 WO 9916843A1
Authority
WO
WIPO (PCT)
Prior art keywords
solution
polishing agent
polishing
planarized
chemically active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE1998/002868
Other languages
German (de)
English (en)
Inventor
Catharina Pusch
Jocelyne Boiton
Peter Golz
Alexandre Pierron-Darbonne
Franz Hagl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Siemens AG
Siemens Corp
Original Assignee
Infineon Technologies AG
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG, Siemens AG, Siemens Corp filed Critical Infineon Technologies AG
Priority to EP98958172A priority Critical patent/EP1019456A1/fr
Publication of WO1999016843A1 publication Critical patent/WO1999016843A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • Polishing agent method for chemical-mechanical planarization and use of the polishing agent for planarizing a semiconductor substrate
  • the invention relates to a polishing agent with a solution, a chemically active component being contained in the solution and polishing grains being suspended.
  • the invention further relates to a method for chemical-mechanical planarization, in which a polishing agent with a solution is fed between a substrate to be planarized and a grinding wheel moving relative to the substrate, wherein a chemically active component is contained in the solution and polishing grains are suspended.
  • the invention also relates to the use of a polishing agent for planarizing a semiconductor substrate.
  • polishing agents and methods for chemical mechanical polishing are used in a variety of ways in practice.
  • a polishing agent is used which, in addition to the polishing grains, also contains active chemical additives. These active chemical additives are matched to the material to be removed.
  • the active chemical additives have the effect that the material to be planarized is removed more than an underlying stop layer made of another material.
  • the quotient from the removal rate of the layer to be planarized (.ffiP / time) is one Multiple the removal rate of the stop layer
  • polishing agent When removing thicker layers, especially layers thicker than 100 nm, several adverse effects occur.
  • the polishing agent or an active chemical component contained in it lose their effectiveness, i.e. a so-called depletion of the slurry occurs. This reduces the removal rate for the material to be planarized and the selectivity.
  • the removal rate is often different at different points on the substrate to be planarized.
  • the object of the invention is to avoid the disadvantages of the prior art.
  • a polishing agent and a method for chemical mechanical planarization are to be created, by means of which it is possible to planarize even thick semiconductor substrates with the highest possible removal rate.
  • the selectivity should be as large as possible compared to a stop layer. According to the invention this object is achieved in that the pH of the solution is smaller by at least 0.1 than the pK a of the chemically active component.
  • the invention provides for making a polishing agent so that the pH of the solution is less than the pK a of the chemically active component contains.
  • the invention thus includes a targeted lowering of the pH.
  • chemically active component is to be understood here to mean any substance which is able to interact with a material to be planarized in such a way that its chemical bonds are weakened or destroyed.
  • a particularly advantageous embodiment of the inventive SSEM polishing agent is characterized in that the pH value of the solution to 0.4 to 1.2 is less than the pK a of the chemically active component.
  • the invention works regardless of how big the pK s - is value of the chemically active component.
  • the pH of the solution only has to be lower than this.
  • a particularly useful polishing agent is characterized in that the pH of the solution is a maximum of 6.7.
  • Particularly high selectivities of the polishing agent according to the invention can be achieved in that the pH of the solution is in the range from 5.0 to 6.7.
  • a high removal rate while largely avoiding microscratches can expediently be achieved in that the polishing grains consist of corundum.
  • the concentration of the polishing grains in the solution is 0.03% by weight to 30% by weight.
  • the concentration of the polishing grains in the solution is 0.3% by weight to 10% by weight. With this concentration range, sedimentation of the polishing grains is avoided and a high removal rate is achieved.
  • the diameter of the polishing grains is 0.001 ⁇ m to 100 ⁇ m, with diameters of 0.01 ⁇ m to 0.5 ⁇ m being particularly suitable.
  • the diameters of 95% of the polishing grains differ from one another by less than 20%.
  • the invention further provides to perform the generic method for chemical mechanical planarization so that the pH value of the solution is lowered by at least 0.1 compared to the pK of the chemically active component.
  • the invention therefore provides for the method to be carried out in such a way that the pH of the solution is lowered in a targeted manner. This lowering of the pH takes place, for example, by adding an acid to the polishing agent.
  • a high removal rate can be achieved with a low consumption of the polishing agent by filling in 150 ml to 200 ml of the polishing agent every minute.
  • An advantageous embodiment of the method according to the invention is characterized in that the grinding wheel is moved at a speed of rotation of at least 10 rpm. It is even more advantageous that the speed of rotation is 40 rpm to 60 rpm, with 50 rpm having proven to be favorable.
  • the substrate to be planarized is moved at a speed of rotation of at least 10 rpm. It is even more expedient that the speed of rotation is 40 rpm to 60 rpm, with 50 rpm being preferred here as well.
  • the method is expediently carried out in such a way that the grinding wheel and the substrate to be planarized are pressed against one another with a force, the force producing a pressure between the grinding wheel and the material to be planarized.
  • High material removal rates without the occurrence of microscratches can be generated in that the pressure between the grinding wheel and the material to be planarized is in the range from 7 x 10 2 kg / m 2 to 10.5 x 10 3 kg / m 2 .
  • the method is carried out in such a way that the polishing process is interrupted.
  • the invention further provides for the use of the polishing agents found for planarizing a semiconductor substrate.
  • semiconductor substrate and “semiconductor layer” are to be understood broadly in the present invention. They also contain connections of semiconducting materials - like their oxides - which are insulators from their electrical properties.
  • a particularly useful use is distinguished by the fact that the pH of the solution is selected as a function of a stop layer located below the substrate to be planarized.
  • the pH can be adapted to the stop layer in such a way that removal of the stop layer is largely avoided.
  • Such an adaptation of the polishing agent to the stop layer can expediently take place in that the pH value of the solution is reduced as the content of nitrogen or a nitrogen compound in the stop layer decreases.
  • a 600 nm to 700 nm thick layer of tetraethyl orthosilicate (TEOS) is used to fill a 500 nm to 600 nm deep isolation trench formed in a shallow trench isolation process on a 110 nm to 170 nm thick stop layer made of silicon nitride (Si 3 N 4 ) applied. This stop layer is applied on a silicon layer.
  • TEOS tetraethyl orthosilicate
  • a polishing agent containing potassium hydroxide is made from its components
  • Components A and B of this polishing agent are the two-component polishing agent Corundum 05 from Rodel, with component Corundum A having the batch number XSHD3562A and component B, for example, the batch number XSHD3562B.
  • the mixture of the components Corundum A and Corundum B contains, in addition to the polishing grains, a surface-active substance and a buffer system.
  • the buffer system is designed so that a constant pH between 6.8 and 7.0 is established.
  • the mixing process takes place immediately before the polishing process in order to avoid flocculation of components.
  • 3.8 kg of Co-all around A are mixed with 19 kg of Corundum B.
  • the selectivity of the removal process of the TEOS layer compared to the silicon nitride layer is less than 4.
  • the silicon nitride layer is etched away by the planarization process, so that the underlying silicon layer is attacked. This leads to the destruction of a CMOS circuit constructed with this insulation structure.
  • the multi-stage planarization process essentially comprises the following steps - regardless of the polishing agent used: applying a photoresist, plasma etching and a subsequent chemical-mechanical polishing step.
  • steps each comprise several sub-steps.
  • the photoresist is first applied selectively at selected points in two partial steps and then on the entire surface by means of a spinning process.
  • Plasma etching requires placing the wafer to be processed in an etching chamber.
  • a conventional polishing step is then carried out after the plasma etching.
  • a polish containing potassium hydroxide solution is mixed from its components A and B in a ratio of 1: 5 and then used in the process of chemical mechanical polishing.
  • Components A and B of this polishing agent are the two-component polishing agent Corundum 05 from Rodel, with component Corundum A having the batch number XSHD3562A and component B, for example, the batch number XSHD3562B.
  • the mixture of the components Corundum A and Corundum B contains, in addition to the polishing grains, a surface-active substance and a Buffer system.
  • the buffer system is designed so that a constant pH between 6.8 and 7.0 is established.
  • the pH of the polishing agent is thus reduced by about 0.5 to 1.1 units, which can be done by adding any acid.
  • This small drop in pH alone increases the selectivity of the removal process of the TEOS layer on structured semiconductor wafers compared to the silicon nitride layer to more than 20.
  • This high selectivity means that the silicon nitride stop layer remains intact. Its thickness after the planarization process only decreases by 30 nm to 40 nm to 80 nm to 130 nm.
  • a 250 nm thick layer of silicon oxide (Si0 2 ) is applied to a stop layer made of silicon nitride (Si 3 N 4 ) in order to fill isolation trenches.
  • a silicon layer is applied to the non-oxidizable silicon nitride layer in a LOCOS process.
  • the silicon layer is then oxidized to a silicon oxide layer, so that an insulation structure is formed.
  • a polishing agent containing potassium hydroxide from its components A and B is also mixed in a ratio of 1: 5 and then used in the process of chemical mechanical polishing.
  • Components A and B of this polishing agent are the two-component Corundum 05 polishing agent from Rodel, with component Corundum A being the batch number XSHD3562A and component B being the batch number
  • XSHD3562B has.
  • the mixture of the components Co-rundum A and Corundum B contains, in addition to the polishing grains, a surface-active substance and a buffer system.
  • the buffer system is designed so that a constant pH between 6.8 and 7.0 is set.
  • the mixing process takes place immediately before the polishing process in order to avoid flocculation of components.
  • 3.8 kg of Co-all around A are mixed with 19 kg of Corundum B.
  • the selectivity of the removal process of the silicon oxide layer compared to the silicon nitride layer is approximately 4.
  • Example 1 a The silicon nitride layer is etched away by the planarization process, so that the silicon layer below the silicon nitride layer is attacked. This leads to the destruction of a CMOS circuit constructed with this insulation structure.
  • a polish containing potassium hydroxide solution is mixed from its components A and B in a ratio of 1: 5 and then used in the process of chemical mechanical polishing.
  • Components A and B of this polishing agent are the two-component Corundum 05 polishing agent from Rodel, whereby the Corundum A component has the batch number XSHD3562A and the component B has the batch number XSHD3562B.
  • the mixture of the components Corundum A and Corundum B contains, in addition to the polishing grains, a surface-active substance and a buffer system.
  • the buffer system is designed so that a constant pH between 6.8 and 7.0 is established.
  • This small drop in pH alone increases the selectivity of the removal process of the oxide layer compared to the silicon nitride layer to more than 20.
  • the pH to be set depends on the composition of a semiconductor wafer as follows:
  • the polishing agent according to the invention and the method according to the invention are particularly suitable for etching a silicon oxide-containing layer, which is applied as a stop layer on a nitride layer, with high selectivity.
  • the method according to the invention is also generally suitable for planarizing insulation structures.
  • Such insulation structures can be formed, for example, in a LOCOS process by thermal oxidation of an insulation layer. It is equally possible to form the isolation structures using a shallow trench isolation process. With the help of an etching mask, trenches are etched in the substrate, which are filled with insulating material.
  • the invention increases - particularly due to the increased selectivity of the planarization process - the stability of insulation structures produced in a LOCOS process.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un agent de polissage avec une solution laquelle renferme un composant chimiquement actif et des grains d'agent de polissage en suspension dans cette solution, caractérisé en ce que le pH de la solution est d'au moins 0,1 inférieur au pKs du composant chimiquement actif. L'invention concerne en outre un procédé permettant d'obtenir une planéité par des moyens chimiques et mécaniques, consistant à amener, entre un substrat à rendre plan et un disque abrasif mobile par rapport au substrat, un agent de polissage avec une solution renfermant un composant chimiquement actif et des grains d'agent de polissage en suspension dans cette solution. Ce procédé est caractérisé en ce qu'on abaisse le pH de la solution d'au moins 0,1 par rapport au pKs du composant chimiquement actif. L'invention concerne en outre l'utilisation d'un agent de polissage pour obtenir la planéité d'un substrat semi-conducteur. L'agent de polissage renferme une solution contenant un composant chimiquement actif et des grains d'agent de polissage en suspension dans cette solution. Cet agent de polissage est caractérisé en ce que le pH de la solution est d'au moins 0,1 inférieur au pKs du composant chimiquement actif.
PCT/DE1998/002868 1997-09-26 1998-09-28 Agent de polissage, procede d'obtention d'une planeite par voie chimique et mecanique et utilisation de l'agent de polissage pour la planeite d'un substrat semi-conducteur Ceased WO1999016843A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP98958172A EP1019456A1 (fr) 1997-09-26 1998-09-28 Agent de polissage, procede d'obtention d'une planeite par voie chimique et mecanique et utilisation de l'agent de polissage pour la planeite d'un substrat semi-conducteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19742634 1997-09-26
DE19742634.4 1997-09-26

Publications (1)

Publication Number Publication Date
WO1999016843A1 true WO1999016843A1 (fr) 1999-04-08

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Application Number Title Priority Date Filing Date
PCT/DE1998/002868 Ceased WO1999016843A1 (fr) 1997-09-26 1998-09-28 Agent de polissage, procede d'obtention d'une planeite par voie chimique et mecanique et utilisation de l'agent de polissage pour la planeite d'un substrat semi-conducteur

Country Status (2)

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EP (1) EP1019456A1 (fr)
WO (1) WO1999016843A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959113A (en) * 1989-07-31 1990-09-25 Rodel, Inc. Method and composition for polishing metal surfaces
WO1994028194A1 (fr) * 1993-05-26 1994-12-08 Rodel, Inc. Compositions et procedes de polissage ameliores

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959113A (en) * 1989-07-31 1990-09-25 Rodel, Inc. Method and composition for polishing metal surfaces
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
WO1994028194A1 (fr) * 1993-05-26 1994-12-08 Rodel, Inc. Compositions et procedes de polissage ameliores

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HAYASHI Y ET AL: "AMMONIUM-SALT-ADDED SILICA SLURRY FOR THE CHEMICAL MECHANICAL POLISHING OF THE INTERLAYER DIELECTRIC FILM PLANARIZATION IN ULSI'S", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 34, no. 2B, PART 01, February 1995 (1995-02-01), pages 1037 - 1042, XP000599425 *

Also Published As

Publication number Publication date
EP1019456A1 (fr) 2000-07-19

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