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WO1999009589A1 - Procede de fabrication de plaquettes minces, par exemple de tranches, et plaquettes minces ainsi produites - Google Patents

Procede de fabrication de plaquettes minces, par exemple de tranches, et plaquettes minces ainsi produites Download PDF

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Publication number
WO1999009589A1
WO1999009589A1 PCT/DE1998/002419 DE9802419W WO9909589A1 WO 1999009589 A1 WO1999009589 A1 WO 1999009589A1 DE 9802419 W DE9802419 W DE 9802419W WO 9909589 A1 WO9909589 A1 WO 9909589A1
Authority
WO
WIPO (PCT)
Prior art keywords
disc
thickness
thin
parts
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE1998/002419
Other languages
German (de)
English (en)
Inventor
Martin Matschitsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO1999009589A1 publication Critical patent/WO1999009589A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02035—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Definitions

  • the present invention relates to a method for producing thin slices, in particular wafers, and a thin slice, for example a wafer.
  • wafers - for example silicon wafers - In chip production, it is common today for wafers - for example silicon wafers - to be brought from an initial thickness to a target thickness before further processing. Regardless of the initial thickness, the target thickness is usually less than 200 ⁇ m. However, such thin disks lose their mechanical stability to a great extent, so that, depending on the machining process, they cannot be processed at all or can only be processed with high reject rates.
  • the present invention is therefore based on the object of providing a method for producing thin panes and a thin pane itself, in which the disadvantages occurring in the prior art are avoided.
  • the object is achieved by a method for producing thin slices, in particular wafers, which is characterized by the following steps: A) reducing the slice thickness from an initial thickness to a base thickness; B) Additional thinning of the pane in a partial area to a target thickness that is less than the base thickness, at least parts of the pane edge area remaining with the base thickness.
  • the process according to the invention enables very thin disks to be produced which, despite their small thickness, retain sufficient mechanical stability for further processing.
  • This mechanical stability is achieved through the thicker edge area, which takes on the function of supporting the thin pane.
  • the rejection rate of the thin disks during processing can be greatly reduced.
  • by dispensing with a separate carrier material to which the thin panes must be glued as described in the prior art the costs and the time required for the method according to the invention can be considerably reduced.
  • a thin disk produced according to the invention permits processing and in particular simultaneous processing on both sides of the disk.
  • the disks produced according to the invention can have any geometrical configuration.
  • the discs are advantageously circular or square, for example square.
  • the edge area in which the base thickness exists after the additional thinning of the pane remains, continuously along the entire periphery of the
  • edge region has the base thickness, so that the edge region does not extend continuously along the disk periphery.
  • the additionally thinned part of the pane with the target thickness advantageously forms the active area of the pane.
  • the active area of the pane is considered to be the pane area which is actually subjected to processing in subsequent processes.
  • the slice thickness is reduced mechanically from the initial thickness to the base thickness.
  • Mechanical grinding is one example.
  • the method according to the invention is not restricted to this machining process. According to the invention it is further provided that the surfaces of the disk are reduced plane-parallel in this process step.
  • the wet chemical etching medium preferably contains 0.8 to 1.2 parts of nitric acid HN0 3 , 0.8 to 1.2 parts of hydrofluoric acid HF, 0.4 to 0.6 parts of sulfuric acid H 2 S0 4 and 0.4 to 0.6 parts Contains phosphoric acid H ⁇ P0 4 .
  • the parts of the edge region — in a preferred embodiment the continuous annular edge region — in which the base thickness is to remain during the additional thinning of the partial region of the pane, can be masked with a masking layer, in particular made of silicon nitride, before the additional thinning is carried out.
  • the width of the parts of the edge area - or the continuous edge area - is advantageously 2.5 to 4 mm.
  • the height can be 100 to 200 ⁇ m.
  • the method according to the invention allows thin disks to be produced which are thinned to an extremely small thickness only in the active area, but not in the edge area, and which remain free for processing on both sides in the active area.
  • the thin disk is provided with sufficient mechanical stability by the thicker edge area, which can be annular, for example, and thus takes over the function of a support ring (torsion ring).
  • the edge area is part of the pane material, so that disadvantageous adhesive processes can be dispensed with.
  • the thickness of the edge area or the support ring is determined by method step A) of the method according to the invention and corresponds to the base thickness set at the beginning.
  • a portion of the pane is further thinned to the desired target thickness, the edge area being retained with the base thickness.
  • the width of the edge area thus corresponds to the width of the support ring.
  • the dimensions of the thicker edge area are determined depending on the application by the disk diameter and the required disk thickness in the active area.
  • a thin disk configured in this way has in particular the advantages, effects, functions and effects described above with regard to the method according to the invention.
  • the edge region with the base thickness is formed continuously along the entire periphery of the pane. Furthermore, the portion of the pane that has the target thickness that is less than the base thickness can form the area within the edge area.
  • the partial area of the pane with the target thickness can preferably be the active area of the pane.
  • the disk can be circular and advantageously have a diameter of more than 7 cm.
  • the disk it is also possible for the disk to be square, for example square or oval. In principle, any geometrical disk configuration is possible.
  • the target thickness of the partial area can have a thickness of less than 200 ⁇ m, preferably less than 100 ⁇ m.
  • the parts of the edge region with the base thickness can have walls directed towards the additionally thinned partial region, which widen approximately from a V-shape from the surface, to the disc base.
  • the thin disk can advantageously be a silicon wafer.
  • Fig.l in a schematic representation a top view of a thin disc according to the invention
  • FIG. 2 shows a cross-sectional view of the thin disc according to the invention along the section line I-I in Fig.l;
  • FIGS. 1 and 2 show a thin slice 10 in plan view or cross-sectional view, which in the present exemplary embodiment is designed as a circular silicon wafer with a diameter of more than 7 cm.
  • the thin pane 10 has an edge area 11 with a base thickness HE and a partial area 12.
  • the section 12 has a target thickness that is less than the base thickness HE.
  • the partial region 12 has a preferred thickness of less than 100 ⁇ m in the present case.
  • the edge region 11 extends continuously along the entire periphery of the disk 10 and thus has an annular shape.
  • the thinner section 12 of the disk 10 is formed within the annular edge area 11.
  • the annular edge region 11 has the function of supporting the thin one
  • the annular edge region 11 is part of the thin disk 10.
  • the annular edge region 11 has a width of 2.5 to 4 mm and a height of 100 to 200 ⁇ m.
  • the slice thickness of a thin slice 10 is reduced from an initial thickness HA of large 500 ⁇ m to a base thickness HE in a first step. This reduction in thickness is achieved by plane-parallel mechanical grinding of at least the disk surface 13.
  • the masking layer 16 has an annular configuration and extends continuously along the entire periphery of the pane 10 (see FIG. 3c).
  • the portion 12 of the pane 10 which is not covered by the masking layer 16 is thinned to a target thickness of less than 100 ⁇ m by means of a wet chemical etching.
  • the wet chemical etching medium contains 1.0 part of nitric acid HN0 3 [65%], 1.0 part of hydrofluoric acid HF [40%], 0.5 part of sulfuric acid H 2 S0 4 [98%] and 0.5 part of phosphoric acid H 3 P0 4 [85%]. This step is shown in Fig.3d.
  • the result is a thin disc 10 with an annular, continuous edge region 11, which further has the base thickness HE. Within the edge area 11, the additional thin area 12 has created which has a target thickness that is less than the base thickness
  • HE is.
  • This so-called active area of the disk 10 is used for the further processing of the disk 10, while the annular edge area 11 takes over the function of a support ring and gives the entire disk 10 the mechanical stability necessary for further processing.
  • the annular edge region 11 is part of the disc 10.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Procédé de fabrication de plaquettes minces selon lequel l'épaisseur de la plaquette est d'abord réduite d'une épaisseur de départ (HA) à une épaisseur de base (HE). Ensuite, la plaquette (10) est amenée dans une zone partielle (12), par amincissement supplémentaire, à une épaisseur cible qui est inférieure à l'épaisseur de base (HE), au moins des parties de la zone périphérique (11) de la plaquette conservant l'épaisseur de base (HE). Cette plaquette mince (10) peut être avantageusement une tranche de silicium. La présente invention concerne en outre une plaquette mince qui est par exemple fabriquée selon ledit procédé. Les parties de la zone périphérique (11) de la plaquette présentant l'épaisseur de base permettent une configuration mince susmentionnée de la plaquette dans la zone active, parallèlement au maintien de la stabilité mécanique de la plaquette en vue du traitement ultérieur.
PCT/DE1998/002419 1997-08-19 1998-08-19 Procede de fabrication de plaquettes minces, par exemple de tranches, et plaquettes minces ainsi produites Ceased WO1999009589A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19735964.7 1997-08-19
DE19735964 1997-08-19

Publications (1)

Publication Number Publication Date
WO1999009589A1 true WO1999009589A1 (fr) 1999-02-25

Family

ID=7839448

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1998/002419 Ceased WO1999009589A1 (fr) 1997-08-19 1998-08-19 Procede de fabrication de plaquettes minces, par exemple de tranches, et plaquettes minces ainsi produites

Country Status (1)

Country Link
WO (1) WO1999009589A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266334A (en) * 1979-07-25 1981-05-12 Rca Corporation Manufacture of thinned substrate imagers
JPH0684731A (ja) * 1992-09-07 1994-03-25 Nec Kyushu Ltd 半導体ウェハー
EP0791953A2 (fr) * 1996-01-31 1997-08-27 Shin-Etsu Handotai Company Limited Procédé de fabrication de rondelles semi-conductrices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4266334A (en) * 1979-07-25 1981-05-12 Rca Corporation Manufacture of thinned substrate imagers
JPH0684731A (ja) * 1992-09-07 1994-03-25 Nec Kyushu Ltd 半導体ウェハー
EP0791953A2 (fr) * 1996-01-31 1997-08-27 Shin-Etsu Handotai Company Limited Procédé de fabrication de rondelles semi-conductrices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 336 (E - 1568) 24 June 1994 (1994-06-24) *
STROHM K.M. ET AL.: "Stress compensated Si-membrane masks for X-ray lithography with synchrotron radiation", PROCEEDINGS OF THE 7TH EUROPEAN CONFERENCE ON ADVANCED TECHNOLOGY AND PROCESSES IN COMMUNICATION AND POWER SYSTEMS, 21 April 1986 (1986-04-21) - 23 April 1986 (1986-04-23), Paris, pages 30 - 35, XP002089233 *

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