WO1999066346A1 - Scintillator plate, radiation image sensor, and method for manufacturing the same - Google Patents

Abstract

Scintillators (12) having a columnar structure are formed on the photodetecting face of a photodiode array (10) of a radiation image sensor. An Al film (light-absorbing film) (14) is provided on the surface of the end portion of each scintillator (12), excepting the scintillators (12) in photodetecting sections (10b). A first polyparaxylene film (16) for improving moisture resistance is provided to cover the whole scintillators (12), and an Al film (18) for improving moisture resistance is provided over the first polyparaxylene film (16). Further a second polyparaxylene film (20) for preventing separation of the Al film (18) is provided.

Description

 Akitoda

Scintillating plate, radiation image sensor and manufacturing method thereof

 The present invention relates to a scintillator plate used for medical X-ray photography and the like, a radiation image sensor, and a method of manufacturing the same. Background art

 X-ray photosensitive films have been used in medical and industrial X-ray photography, but radiation imaging systems using radiation detection elements have become widespread in terms of convenience and preservation of imaging results. In such a radiation imaging system, pixel data based on two-dimensional radiation is acquired as an electric signal by a radiation detecting element, and this signal is processed by a processing device and displayed on a monitor.

 2. Description of the Related Art Conventionally, a scintillator panel disclosed in Japanese Patent Application Laid-Open No. Sho 63-215987 has been known as a scintillator panel constituting a radiation detecting element. This scintillator panel forms a columnar scintillator composed of CsI which is a typical scintillator material on a fiber optical plate (FOP). Each column has a columnar structure, each of which does not serve as a light guide, and guides the light generated by the radiation to the light emitting surface.

By the way, in the columnar structure of scintillation, many reflections and absorptions are repeated until the light generated by the scintillation reaches the light emitting surface of the scintillation. Approximately half of the light generated in Sinchile travels toward the tip of Sinchile and is reflected on the surface of the tip, so that a part of the reflected light is directed toward the light exit surface proceed. However, light with a large vector component in the horizontal direction becomes a crosstalk component and reaches the adjacent scintillator or a distant scintillator and is resolved. Deterioration of degree was caused. Incidentally, Japanese Patent Application Laid-Open No. H5-24-2842 discloses an X-ray imager having a light absorbing film on the surface of a scintillator.

 An object of the present invention is to provide a high-resolution scintillator plate, a radiation image sensor, and a method of manufacturing the same. Disclosure of the invention

 A radiation image sensor according to the present invention is a radiation image sensor comprising: a scintillator having a columnar structure formed on a light receiving surface of an imaging element; and an organic film covering at least a part of the scintillator having a columnar structure. A light absorbing film is provided on the surface of the tip of the scintillator having the columnar structure formed on a portion other than the light receiving portion of the imaging device. According to the radiation image sensor of the present invention, of the light generated by the columnar structure of the scintillator formed on the portion other than the light receiving portion of the imaging device, the light traveling toward the tip of the scintillator is However, since the light is absorbed by the light absorbing film provided on the front surface of the scintillator, the crosstalk component can be reduced, and the resolution of the radiation image sensor can be improved. The radiation image sensor according to the present invention is characterized in that the radiation image sensor further includes a light reflection film on the surface of the organic film. According to the radiation image sensor of the present invention, of the light generated by the columnar structure of the scintillator formed on the light receiving portion of the imaging device, the light that has proceeded toward the tip of the scintillator has Since the light is reflected by the light reflecting film provided on the surface of the organic film, the amount of light incident on the light receiving portion of the imaging device can be increased.

The radiation image sensor according to the present invention is characterized in that the radiation image sensor further includes a light absorbing film between the light receiving portions on the light receiving surface of the image sensor. According to the radiation image sensor of the present invention, the light absorption film between the light receiving portions on the light receiving surface of the image sensor causes the cross of light generated by the scintillation of the columnar structure formed in a portion other than on the light receiving portion of the image sensor. In order to absorb the talk component, the resolution of the radiation image sensor is further improved. Can be up.

 The radiation image sensor according to the present invention is characterized in that the radiation image sensor further includes a light reflecting film on the surface of the tip portion of the scintillator having a columnar structure formed on the light receiving portion of the imaging device of the radiation image sensor. According to the radiation image sensor of the present invention, the light reflecting film provided on the front end portion of the scintillator having a columnar structure formed on the light receiving portion of the imaging device forms a scintillator in the light generated in the scintillator. Since the light traveling toward the tip of the night is reflected, the light incident on the light receiving section of the image sensor can be increased.

 Further, the present invention provides a radiation image sensor, wherein the scintillation plate of the radiation image sensor includes a columnar structure of scintillator formed on a substrate and an organic film covering at least a part of the columnar structure of scintillator. A scintillator plate comprising: a scintillator plate, wherein a light-absorbing film is provided on a front end surface of the scintillator plate that faces a portion other than a light receiving portion of an image sensor in the scintillator plate. According to the scintillation plate of the present invention, of the light generated by the columnar structure of the scintillation tube facing the portion other than the light receiving portion of the image sensor, the light traveling toward the tip of the scintillation tube is However, since the light is absorbed by the light absorbing film provided on the surface of the tip of the scintillator, the crosstalk component can be reduced and the resolution of the scintillator plate can be improved.

 Further, the scintillator plate of the present invention further comprises a light absorbing film at a position facing a portion other than the light receiving portion of the image sensor on the surface of the substrate of the scintillator plate on which the scintillator plate is formed. It is characterized by. According to this scintillator plate, the crosstalk component of the light generated in the scintillator is absorbed by the light absorbing film provided on the substrate opposite to the position other than the light receiving portion of the image sensor. The resolution of the overnight plate can be improved.

The scintillator plate may further include a scintillator plate according to claim 5 or claim 6, wherein the scintillator plate of the substrate is provided with the scintillator plate in front of the imaging element. A light reflection film is further provided at a position facing the light receiving section. According to the scintillator plate of the present invention, the light incident on the light receiving section of the imaging element is reflected by the light reflecting film provided on the substrate facing the light receiving section of the imaging element to reflect the light generated in the scintillating section. Can be increased.

 Further, the present invention is characterized in that the radiation image sensor further comprises an image pickup device at a front end side of the scintillator.

 In addition, the method for manufacturing a radiation image sensor according to the present invention includes: a scintillation forming step of forming a scintillator having a columnar structure on a light receiving surface of the imaging element; A light absorbing film forming step of forming a light absorbing film on the front end surface of the evening; and an organic film forming step of covering the surface of the scintillator with an organic film. According to the method for manufacturing a radiation image sensor of the present invention, a radiation image sensor with improved resolution can be manufactured.

 Further, the method of manufacturing a radiation image sensor according to the present invention is characterized in that the method further comprises a light reflecting film forming step after the organic film forming step. According to the method for manufacturing a radiation image sensor of the present invention, of the light generated by the scintillator having a columnar structure formed on the light receiving portion of the imaging device, the light traveling toward the front end of the scintillator Is reflected by the light reflecting film provided on the surface of the organic film, whereby a radiation image sensor with improved resolution can be manufactured.

 The method of manufacturing a radiation image sensor according to the present invention may further include a step of forming the columnar structure formed on the light receiving portion of the imaging element in the columnar structure between the scintillation forming step and the organic film forming step. The method further comprises a light reflection film forming step of forming a light reflection film on the front end surface of the scintillator. According to the present invention, it is possible to manufacture a radiation image sensor in which the amount of light incident on the light receiving portion of the imaging device is increased.

In addition, the method of manufacturing a radiation image sensor according to the present invention further includes a light absorption film forming step of forming a light absorption film between light receiving portions of the light receiving surface of the imaging device before the scintillation forming step. Features. According to the present invention, a radio with further improved resolution is used. A ray image sensor can be manufactured.

 Further, the method of manufacturing a scintillation plate according to the present invention includes: a scintillation forming step of forming a scintillation column having a columnar structure on a substrate; and a step of forming an image of the scintillation having a columnar structure formed on the substrate. A light absorbing film forming step of forming a light absorbing film on the surface of the tip of the scintillator facing a portion other than the light receiving portion of the element; and an organic film forming step of covering the surface of the scintillator with an organic film. It is characterized by. According to the present invention, it is possible to manufacture a scintillator plate with improved resolution.

 Further, a scintillator plate according to the present invention is a scintillator plate comprising: a columnar scintillator formed on a substrate; and an organic film covering at least a part of the columnar scintillator. The surface on which the scintillation is formed on the substrate has a second optical characteristic different from the first optical characteristic in a region having the first optical characteristic in a region corresponding to the light receiving portion of the image sensor and in a region corresponding to the region between the light receiving portions. It is characterized by having a region having optical characteristics. According to the present invention, regions having different optical characteristics on a flat substrate can be accurately created on the light receiving surfaces of the corresponding imaging elements and between the light receiving surfaces, so that the resolution can be higher. The regions having different optical characteristics can be realized by forming at least one of the light reflection film and the light absorption film. According to the present invention, it is possible to manufacture a scintillator plate with further improved resolution. Further, by providing the light absorbing film, it is possible to realize a scintillator plate in which the amount of light incident on the light receiving portion of the imaging device is increased.

Further, the scintillating manufacturing method according to the present invention is characterized in that the optical characteristics of the first region corresponding to the light receiving surface of the image sensor and the optical characteristics of the second region corresponding to between the light receiving surfaces are provided on the first surface of the substrate. An optical property providing step for differentiating, a scintillation forming step for forming a scintillating columnar structure on the first surface of the substrate, and an organic film forming step for covering the scintillating overnight surface with an organic film. It is characterized by having. According to the present invention, regions having different light characteristics on a flat substrate can be accurately formed on the light receiving surfaces of the corresponding image pickup devices and between the light receiving surfaces, so that a scintillator having a higher resolution can be manufactured. Further, the method of manufacturing a radiation image sensor according to the present invention is characterized in that, in the above-described manufacturing method, an imaging element arranging step of arranging an imaging element on a front end side of the scintillating plate of the scintillating plate is further provided. BRIEF DESCRIPTION OF THE FIGURES

 FIG. 1 is a sectional view of the radiation image sensor according to the first embodiment of the present invention.

 FIGS. 2A, 2B, and 2C are diagrams showing a manufacturing process of the radiation image sensor according to the first embodiment of the present invention.

 FIG. 3A and FIG. 3B are diagrams showing the steps of manufacturing the radiation image sensor according to the first embodiment of the present invention.

 FIG. 4 is a cross-sectional view of the radiation image sensor according to the second embodiment of the present invention.

 FIGS. 5A, 5B and 5C are views showing the first half of the manufacturing process of the radiation image sensor according to the second embodiment of the present invention.

 6A and 6B are views showing the latter half of the manufacturing process of the radiation image sensor according to the second embodiment of the present invention.

 FIG. 7 is a cross-sectional view of the radiation image sensor according to the third embodiment of the present invention.

 FIG. 8 is a sectional view of a radiation image sensor according to a fourth embodiment of the present invention.

 FIG. 9 is a sectional view of a radiation image sensor according to a fifth embodiment of the present invention.

 FIG. 10 is a diagram illustrating a modification of the first embodiment.

 FIG. 11 is a diagram showing a modification of the second embodiment.

FIG. 12 is a diagram showing a modification of the third embodiment. FIG. 13 is a diagram showing a modified example of the fourth embodiment.

FIG. 14 is a diagram showing a modified example of the fifth embodiment. BEST MODE FOR CARRYING OUT THE INVENTION

 Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1, 2A, 2B, 2C, 3A, and 3B. FIG. 1 is a sectional view of a radiation image sensor 2 according to the exemplary embodiment. As shown in FIG. 1, the radiation image sensor 2 is composed of a thin-film transistor (TFT) and a photodiode array (imaging device) 10. An A1 (black A1) film (light absorbing film) 14 is provided on the surface of the tip of the scintillator 12 formed on the other part, and the entire scintillator 12 is designed to improve moisture resistance. The first polyparaxylylene film (organic film) 16 is covered with a first polyparaxylylene film 16, and an A1 film 18 for improving moisture resistance is provided on the first polyparaxylylene film 16. It has a structure in which a second polyparaxylylene film 20 for preventing peeling of the A1 film 18 is provided.

 Next, a manufacturing process of the radiation image sensor 2 will be described with reference to FIGS. 2A, 2B, 2C, 3A, and 3B. As shown in FIG. 2A, the photodiode array 10 constituting the radiation image sensor 2 has a light receiving portion 10b formed in an array at a pitch of 200 μm on a substrate 10a. First, on the light-receiving surface of the substrate 10a of the photodiode array 10, a columnar crystal of CsI doped with T1 is grown by vapor deposition at a temperature of the substrate 10a of 100 ° C., and a column diameter of 10 mm. m, a columnar structure with a thickness of 600〃m.

Next, under hydrogen gas, an A1 film 14 was deposited to a thickness of 100 nm on the surface of the scintillator 12 and the surface of the tip of the scintillator 12 formed on the light receiving part 10b was 150 m thick. By irradiating an excimer laser focused on the diameter, only the A1 film on the surface of the tip of the scintillator 12 formed on the light receiving portion 10b is removed. to this Only the A1 film 14 on the surface of the scintillator 12 formed on the portion other than the light receiving portion 10b is left as a light absorbing film (see FIG. 2B).

 Next, the photodiode array 10 on which the scintillator 12 was formed was placed in a vapor deposition chamber of a CVD apparatus, and the polyparaxylylene raw material was exposed to the sublimated vapor, so that the scintillator 12 was formed. The surface is covered with a first polyparaxylylene film 16 having a thickness of 10 μm (see FIG. 2C).

 Next, the photodiode array 10 in which the scintillator 12 is covered with the first polyparaxylylene film 16 is taken out of the deposition chamber of the CVD apparatus, and the A1 film 1 is formed on the surface of the first polyparaxylylene film 16. 8 is deposited to a thickness of 300 nm (see Fig. 3A). Here, the A1 film 18 is formed in a range that covers the scintillator 12 because the purpose is to improve the moisture resistance of the scintillator 12. The A1 film 18 also functions as a light reflection film.

 Thereafter, a second polyparaxylylene film 20 for preventing the A1 film 18 from peeling is formed on the surface of the A1 film 18 (see FIG. 3B). That is, as in the case of the formation of the first polyparaxylylene film 16, the photodiode array 10 on which the scintillation light 12 is formed is put into a vapor deposition chamber of a CVD apparatus, and the film 1 is formed according to the 〇0 method. A second polyparaxylylene film 20 having a thickness of 10 m is formed on the first polyparaxylylene film 16 on which the surface 8 and the A1 film 18 are not formed. When this step is completed, the manufacture of the radiation image sensor 2 is completed.

According to the radiation image sensor 2 according to the first embodiment, the A1 film (the light absorbing film) is formed on the surface of the tip portion of the column-shaped scintillator 12 formed on the portion other than the light receiving portion 10 b of the photo diode array 10. Since light 14 is provided, light traveling toward the A1 film 14 out of light generated in the columnar structure of the scintillator 12 formed in a portion other than the light receiving portion 10b is transmitted through the A1 film 14. Since the light is absorbed, the crosstalk component of the light generated in the scintillator 12 can be reduced, and the resolution of the radiation image sensor 2 can be improved. In addition, Since the surface of the evening 12 is covered with the first polyparaxylylene film 16, the 18th film 18 and the second polyparaxylylene film 20, the moisture resistance of the scintillation can be maintained. .

 In the above-described first embodiment, the A1 film is used as the light absorbing film. However, the present invention is not limited to this, and the light absorbing film is formed by coating powder such as carbon black. Is also good. Further, a Cr film or the like may be used.

 Further, in the radiation image sensor 2 according to the first embodiment described above, a light reflecting film, for example, Ba S 0 2 or T i is formed on the surface of the tip of the scintillator 12 formed on the light receiving section 10 b. In addition to providing a light reflecting film formed by coating the powder of No. 02 on the light receiving surface between the light receiving portions 10 b of the photodiode array 10, a light absorbing film such as a coated polyimide is applied to the light absorbing film. A light-absorbing film formed by irradiating ultraviolet light, an electron beam, or the like and coloring it may be provided. In this case, after forming a light absorbing film on the light receiving surface between the light receiving portions 10 b of the photodiode array 10, a scintillating lens 12 is formed and formed on the light receiving portion 10 b. A light-reflecting film is provided on the surface of the front end of Sinchile 12. Further, in the radiation image sensor 2 according to the first embodiment, a light reflection film formed on the surface of the distal end of the scintillator 12 on the light receiving portion 10b, between the light receiving portion 10b of the photodiode array 10 Only one of the light absorbing films formed on the light receiving surface may be formed.

Further, in the first embodiment described above, a thin film transistor + photodiode array 10 is used as a substrate for forming the scintillator 12; however, the present invention is not limited to this, and a CCD, a MOS solid-state image sensor, or the like may be used. It may be used. Next, a second embodiment of the present invention will be described with reference to FIGS. 4, 5A, 5B, 5C, 6A, and 6B. FIG. 4 is a cross-sectional view of a radiation image sensor 8 having a structure in which a photodiode array 6 is bonded to a scintillator plate 4 according to a second embodiment. As shown in FIG. 4, the scintillator plate 4 is a scintillator plate provided on a substrate 30 made of amorphous carbon. A1 film (light absorbing film) 34 is provided on the surface of the tip of scintillator 32 facing the part other than the light receiving part 6 b of the photodiode array (imaging device) 6 to improve moisture resistance of scintillator 32 The first polyparaxylylene film (organic film) 36 is covered with a first polyparaxylylene film 36, and a Si 02 film 38 for improving moisture resistance is further formed on the first polyparaxylylene film 36. In addition to the structure, a second polyparaxylylene film 40 is provided on the Si 2 film 38 to prevent the Si 02 film 38 from peeling off.

 Next, with reference to FIGS. 5A, 5B, 5C, 6A, and 6B, a description will be given of a manufacturing process of the scintillation overnight panel 4. FIG. First, as shown in FIG. 5A, a columnar crystal of CsI doped with T1 is grown on one surface of the substrate 30 by a vapor deposition method, and a columnar diameter of 10 / m and a thickness of 600 μm is formed. A scintillator 32 of the structure is formed. Next, under hydrogen gas, an A1 film was deposited with a thickness of 100 nm on the surface of the tip of the scintillator 32, and the scintillator 32 at a position facing the light receiving portion 6b of the photodiode array 6 was deposited. By irradiating the upper surface with an excimer laser with a diameter of 150 mm, the A1 film on the surface of the scintillator 32 formed on the light receiving portion 6b is removed. As a result, only the A1 film on the surface of the scintillator 32 formed in a portion other than the light receiving portion 6b is left as a light absorbing film (see FIG. 5B).

 Next, the substrate 30 on which the scintillator 32 is formed is put into a vapor deposition chamber of a CVD apparatus, and the surface of the scintillator 32 is exposed by exposing the raw material of polyparaxylylene to sublimated steam. It is covered with a first polyparaxylylene film 36 having a thickness of 10 μm (see FIG. 5C).

Next, the substrate 30 covered with the first polyparaxylylene film 36 is taken out of the vapor deposition chamber of the CVD apparatus, and the Si02 film 38 is coated on the surface of the first polyparaxylylene film 36 at 300 nm. (See Figure 6A). Here, the Si 02 film 38 is formed in a range that covers the scintillator 32 because it aims at improving the moisture resistance of the scintillator 32. Thereafter, a second polyparaxylylene film 40 for preventing the SiO 2 film 38 from peeling is formed on the surface of the 3: 10 2 film 38 (see FIG. 6B). That is, as in the case of the formation of the first polyparaxylylene film 36, the substrate 30 on which the scintillation layer 32 was formed was put into a deposition chamber of a CVD apparatus, and Si 0 2 was formed by sputtering. A second polyparaxylylene film 40 is formed with a thickness of 10 m on the surface of the film 38 and on the first polyparaxylylene film 36 on which the Si 0 211 38 is not formed. . When this step is completed, the production of the scintillator panel 4 is completed.

 The scintillator panel 4 is used as a radiation image sensor 8 with a photodiode array 6 attached thereto (see FIG. 4). That is, in the photodiode array 6, the light receiving portions 6b are formed in an array at a pitch of 200 zm on the substrate 6a, and the light receiving portion of the photodiode array 6 is provided on the 32nd side of the scintillator. The radiation image sensor 8 is manufactured by aligning the light-receiving unit 6b so that the light-receiving unit 6b faces the scintillator 32 with the surface facing.

 According to the scintillator panel 4 according to the second embodiment, the A1 film (optical layer) is provided on the front surface of the columnar scintillator panel 32 facing the light receiving portion 6 b of the photodiode array 6. Since the absorption film 34 is provided, the light traveling toward the A1 film 34 out of the light generated in the scintillator 32 facing parts other than the light receiving portion 6b Since the light is absorbed by the A1 film 34, the crosstalk component of the light generated in the scintillator 32 can be reduced, and the resolution of the scintillator panel 4 can be improved. In addition, since the surface of the scintillator 32 is covered with the first polyparaxylylene film 36, the SiO 2 film 38 and the second polyparaxylylene film 40, the moisture resistance of the scintillator 32 is Can also be maintained.

In the scintillator panel 4 of the second embodiment described above, the light absorbing film 34 is provided at the tip of the scintillator panel 32, but the portion opposing the light receiving portion 6b of the photodiode array 6 is provided. Even if a light reflecting film or a light absorbing film is provided on the surface of the substrate 30 to control light incidence on the photodiode array 6, the resolution can be increased. In the following, a third embodiment in which this method is adopted and an A1 substrate is adopted will be described. _C FIG. 7 shows a case in which an A1 substrate is adopted as the substrate 30 and the light receiving section 6 b of the photodiode array 6 is used. 5 shows a radiation image sensor provided with a scintillation panel provided with a light absorbing film 34a on a portion of the substrate 30 which does not correspond to FIG. Here, the portion of the A1 substrate 32 where the light absorbing film 34a is not provided reflects light because the A1 substrate is a light-reflective substrate. This makes it possible to realize a resolution equal to or higher than that of the scintillator panel of the second embodiment described above. In the method of manufacturing the third embodiment, first, an A1 substrate 32 is prepared, and then a light absorbing film, for example, a black A1 film and carbon black are formed on a part of the surface. Then, similarly to the second embodiment, a CsI columnar structure 32 of T 1 -doped C s I column is formed on the surface on which the light absorbing film 34 a is formed as in the second embodiment. . After that, it is the same as the manufacturing method of the second embodiment.

 Next, a fourth embodiment in which an amorphous carbon substrate is employed as the substrate will be described with reference to FIG.

 In the fourth embodiment, as shown in FIG.

By coating a light reflecting film 34 b, for example, B a S 0 2 or T i 0 2, on a portion of the substrate 30 corresponding to the light receiving section 6 b of the photodiode array 6 on 3 2 The formed light reflection film is provided. This is because the amorphous carbon substrate 32 is a light-absorbing substrate, so that the incident light is reflected at the portion where the light reflecting film 34b is provided, and the other portions absorb the incident light. A resolution equal to or higher than that of the scintillator panel of the second embodiment can be realized.

 The manufacture of the scintillation panel of the fourth embodiment is the same except that the light reflection film 34b is formed on the amorphous carbon, and therefore, the description is omitted.

 Next, a fifth embodiment in which a glass substrate is used instead of the amorphous carbon substrate of the fourth embodiment will be described with reference to FIG.

In the fifth embodiment, as shown in FIG. A light reflecting film, for example, a light reflecting film 34 c formed by coating Ba 3〇2 ゃ ：: 102 is provided on a portion on the substrate 30 corresponding to the light receiving portion 6 b of the door array 6, and a photodiode is provided. A light absorbing film, for example, a light absorbing film 34d is provided by coating a portion on the substrate 30 that does not correspond to the light receiving portion 6b of the door array 6 with a powder such as an A1 film or carbon black. This is because the glass substrate 32 is a light-transmitting substrate, so that light is reflected at the portion where the light reflecting film 34c is provided, and is absorbed at the portion where the light absorbing film 34d is provided. The same or higher resolution as the scintillator panel of the second embodiment can be realized.

 In these third to fifth embodiments, since a light reflecting film or a light absorbing film can be formed on a flat substrate, the fabrication is easy, and the place where the film is formed can be made accurate, so that Resolution can be increased.

 In addition, polyparaxylylene in each of the above-mentioned embodiments includes, in addition to polyparaxylylene, polymonoclox paraxylylene, polydichloroparaxylylene, polytetraclox paraxylylene, polyfluoroparaxylylene, polydimethyl paraxylylene, Includes tyl paraxylylene and the like.

 Further, in each of the above-described embodiments, C sl (T 1) is used as a short notice, but the present invention is not limited to this, and C s I (Na), Na I (T l), L i I ( E u) and KI (T 1) may be used.

 In the second to fifth embodiments described above, a substrate made of A1, a substrate made of amorphous carbon, and a substrate made of glass are used as substrates for forming the scintillator, respectively. As long as the substrate has good transmittance, a material containing carbon as a main component, for example, a graphite substrate, a Be substrate, a SiC substrate, or a FOP may be used.

In the third and fourth embodiments, the light absorbing film coated with the A1 film, carbon black or the like is used. However, the light absorbing film is not limited thereto, and a Cr film or the like may be used. Further, in a manner to the above embodiments, the use of the S i 0 ₂ film as the transparent inorganic film, the material is not limited _{thereto, A1 2 0 3, T i} 0 2, ln 2 0 3, Sn0 2 , MgO, S iN, Mg F 2, L i F, CaF 2, AgC l or S i N 0 like may be used.

 In addition, as shown in Figs. 10, 11, 12, 13 and 14, a light absorbing film 41 is formed between the light receiving sections on the light receiving surface of the image sensor to absorb unnecessary light and further reduce crosstalk. May be achieved. The light absorbing film used here may be a film obtained by coating an A1 film, carbon black, or the like, but is not limited thereto, and a Cr film or the like may be used. Further, a material formed by irradiating a coated polyimide or the like with heat, ultraviolet rays, an electron beam or the like and coloring the same may be used.

 According to the radiation image sensor of the present invention, of the light generated by the scintillator having a columnar structure formed in a portion other than on the light receiving portion of the imaging device, the light that has advanced toward the front end of the scintillator Since the light is absorbed by the light absorbing film provided on the surface of the tip of the scintillator, the crosstalk component can be reduced, and the resolution of the radiation image sensor can be improved.

 According to the scintillator plate of the present invention, among the light generated by the scintillator having a columnar structure facing a portion other than the light receiving portion of the image sensor, light traveling toward the front end of the scintillator is Since the light is absorbed by the light absorbing film provided on the surface of the tip of the scintillator, the crosstalk component can be reduced, and the resolution of the scintillator plate can be improved.

Further, according to the method for manufacturing a radiation image sensor of the present invention, a radiation image sensor with improved resolution can be manufactured. According to the method for manufacturing a scintillation plate, a radiation image sensor with improved resolution can be manufactured. Plates can be manufactured o Industrial applicability As described above, the scintillator panel, the radiation image sensor, and the manufacturing method thereof according to the present invention are suitable for use in medical and industrial X-ray photography,

Claims

Scope of word blue  1. A radiation image sensor including a scintillator having a columnar structure formed on a light receiving surface of an imaging element and an organic film covering at least a part of the scintillator having a columnar structure,  A radiation image sensor comprising a light absorbing film on a surface of a tip portion of the scintillator having the columnar structure formed in a portion other than on a light receiving portion of the imaging element.  2. The radiation image sensor according to claim 1, further comprising a light reflection film on a surface of the organic film.  3. The radiation image sensor according to claim 1, further comprising a light absorbing film between the light receiving portions on the light receiving surface of the imaging element.  4. A light reflection film is further provided on a front end surface of the scintillator of the columnar structure formed on a light receiving portion of the imaging element, wherein the light reflection film is further provided. A radiation image sensor as described.  5. A scintillator plate comprising a columnar structure scintillator formed on a substrate and an organic film covering at least a part of the columnar structure scintillator,  A scintillator plate comprising a light absorbing film on a surface of a tip portion of the scintillator opposed to a light receiving portion of an image sensor in the scintillator.  6. The scintillator according to claim 5, further comprising a light absorbing film on a surface of the substrate on which the scintillator is formed, facing a portion other than the light receiving portion of the image sensor. plate.  7. In a scintillator plate comprising a columnar structure scintillator formed on a substrate and an organic film covering at least a part of the columnar structure scintillator, The scintillation forming surface of the substrate has a first optical characteristic different from a first optical characteristic in a region corresponding to a light receiving portion of the imaging device and a region corresponding to a region between the light receiving portions. Characterized by having a region having the second optical characteristic  8. The scintillator plate according to claim 6, wherein the first optical property is realized by a light reflecting film.  9. The scintillator plate according to claim 7, wherein the second optical property is realized by a light absorbing film.  10. A radiation image, further comprising: an imaging element on a front end side of the scintillator plate of the scintillator plate according to any one of claims 5 to 9. Sensor.  11. The scintillator plate according to claim 7, 8 or 9, further comprising an imaging device on a tip side of the scintillation plate, further comprising a light absorbing layer between light receiving portions on a light receiving surface of the imaging device. A radiation image sensor characterized by the following.  12. A scintillation forming step of forming a columnar scintillation on the light receiving surface of the image sensor;  A light absorbing film forming step of forming a light absorbing film on the surface of the tip of the scintillator formed in a portion other than the light receiving portion of the image sensor;  An organic film forming step of covering the surface of the scintillator with an organic film, A method for manufacturing a radiation image sensor, comprising:  13. The method for manufacturing a radiation image sensor according to claim 12, further comprising a light reflecting film forming step after the organic film forming step.  14. Between the scintillation forming step and the organic film forming step, in the columnar structure scintillating section, the columnar structure scintillating section formed on the light receiving portion of the imaging device. 14. The method for manufacturing a radiation image sensor according to claim 12, further comprising a light reflection film forming step of forming a light reflection film on a front end surface of the radiation image sensor. 15 5. Before the formation process of the scintillation, between the light receiving portions on the light receiving surface of the image sensor 15. The method for producing a radiation image sensor according to claim 12, further comprising a light absorbing film forming step of forming a light absorbing film.  16. A scintillation forming step of forming a columnar structure scintillation on the substrate, and a portion of the columnar scintillation forming on the substrate other than the portion above the light receiving portion of the image sensor. A light-absorbing film forming step of forming a light-absorbing film on the surface of the front end of the scintillator;  A step of forming an organic film covering the surface of the scintillator with an organic film.  17. An optical property providing step for making the optical properties of the first area corresponding to the light receiving surface of the image sensor and the optical properties of the second area corresponding to the area between the light receiving faces on the first surface of the substrate different from each other;  Forming a scintillating columnar structure on the first surface of the substrate;  An organic film forming step of covering the surface of the scintillator with an organic film,  A method for producing a scintillator plate, comprising:  18. The manufacturing method according to claim 17, wherein a light reflection film is formed in the first region in the optical property providing step.  19. The manufacturing method according to claim 17 or 18, wherein a light absorbing film is formed in the second region in the optical property imparting step.  20. The method of manufacturing a scintillating plate according to any one of claims 16 to 19, further comprising: arranging an imaging element on a front end side of the scintillating plate of the scintillating plate. A method for manufacturing a radiation image sensor, comprising an element disposing step.