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WO1998038710A1 - Composant optoelectronique - Google Patents

Composant optoelectronique Download PDF

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Publication number
WO1998038710A1
WO1998038710A1 PCT/EP1998/001080 EP9801080W WO9838710A1 WO 1998038710 A1 WO1998038710 A1 WO 1998038710A1 EP 9801080 W EP9801080 W EP 9801080W WO 9838710 A1 WO9838710 A1 WO 9838710A1
Authority
WO
WIPO (PCT)
Prior art keywords
optoelectronic component
component according
electrothermal element
optical waveguide
electrothermal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP1998/001080
Other languages
German (de)
English (en)
Inventor
Hartmut Hillmer
Bernd Klepser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deutsche Telekom AG
Original Assignee
Deutsche Telekom AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19717545A external-priority patent/DE19717545A1/de
Application filed by Deutsche Telekom AG filed Critical Deutsche Telekom AG
Priority to AU67252/98A priority Critical patent/AU6725298A/en
Publication of WO1998038710A1 publication Critical patent/WO1998038710A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/163—Single longitudinal mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission

Definitions

  • the invention relates to an optoelectronic component with spatially adjustable temperature distribution, which has at least one optical waveguide and at least one electrothermal element for changing the temperature of the optical waveguide.
  • a frequency tuning can be carried out without an efficient possibility to influence further parameters of the optoelectronic component and to adapt the component to the respective application conditions.
  • inhomogeneities in the optical waveguide cause, inter alia, that the yield or the efficiency of the component is not satisfactory.
  • the object of the invention is therefore to provide an optoelectronic component whose properties can be adapted to the respective application conditions, with a high yield or very good efficiency preferably being achieved.
  • the optoelectronic component according to the invention in that the electrothermal element is designed and / or arranged in such a way that the temperature change which can be caused in the optical waveguide is location-dependent. This allows the physical component parameters to be optimized using an individually selected temperature field.
  • the invention is based on the knowledge that various performance features of optoelectronic components are caused by inhomogeneities of the optical waveguide and that a targeted control of the effect of the inhomogeneities is possible by means of location-dependent temperature changes.
  • the following features of optoelectronic components can be positively influenced by the measures according to the invention: efficiency, optical Output power, line width, side mode suppression, mode stability, wavelength tunability, efficiency of wavelength tuning, beam steering (beam steering), wavelength selection - depending on the type of component, for example a laser, a laser amplifier, a filter, a length wave converter, a multiplexer, a demultiplexer or a detector can be.
  • the at least one electrothermal element can be designed as a heating element or as a cooling element, for example in the form of a Peltier element.
  • the cross section of the at least one electrothermal element, the specific resistance of the at least one electrothermal element and / or that the distance of the at least one electrothermal element from the optical waveguide is location-dependent.
  • the optoelectronic component according to the invention has at least one optical waveguide which guides a light field of a defined wavelength range in the axial direction, for example in the x direction. Due to the spatially inhomogeneous Resistance heating can be used to vary physical parameters, for example the refractive index, which are relevant for the component function locally via their temperature dependence.
  • the optical waveguide is preferably made up of organic or inorganic semiconductors, polymers or glasses.
  • a particularly advantageous embodiment can be seen in an inorganic semiconductor laser.
  • the electrothermal elements preferably consist of one of the following electrically conductive substances: pure metals, metal alloys, ceramics, polymers or electrolytes.
  • a metal film can be seen which has a substantially smaller extent in the z direction than in the x and y directions.
  • the material composition of the metal film can additionally vary spatially (in this case preferably in the x and y directions).
  • the lateral boundaries are preferably described by at least two curved functions y1 (x) and y2 (x) if the electrothermal element is simply connected. In the case of regions which are connected several times, further limiting functions yi (x) occur accordingly.
  • the metal film can additionally be curved in the z-directions, that is to say it runs over ribs, for example.
  • the metal body of the electrothermal element is contacted at at least two points, a voltage applied to the contact depending on the change in the electrical resistance in the xyz space causing a correspondingly spatially distributed current density.
  • variable temperature distribution in the xyz space can be realized in the optical waveguide of the component.
  • the optoelectronic component is, for example, a semiconductor laser
  • the variable temperature distribution enables a more stable single-mode oscillation and an increase in yield to be achieved.
  • the electrothermal element can either be put into operation before the current is injected into the laser-active zone of the laser component.
  • Fig. 4 each have a semiconductor laser with a
  • FIG. 7 shows a semiconductor laser with a heating element with a constant width over the length, but with changing length-specific resistance
  • FIG. 8 shows a semiconductor laser with a heating element which has cutouts
  • 10 shows a semiconductor laser with two heating elements which are arranged on different sides on each half of the optical waveguide
  • 11 shows a semiconductor laser with three heating elements, each of which extends over part of the optical waveguide
  • Fig. 13 shows a semiconductor laser with a
  • Fig. 14 is a semiconductor laser with a
  • 15 is a perspective view of a semiconductor laser
  • 16 shows a semiconductor laser with a parallel heating element.
  • FIG. 1 shows a top view of a semiconductor laser 10 which has the length L and whose waveguide runs in the axial direction (x direction).
  • the basic structure of a semiconductor laser is known, which is why a detailed description is omitted.
  • a strip 1 can be seen in the figure, which represents the contacting layer on the side of the pn-junction of the semiconductor laser facing away from the substrate.
  • the waveguide not shown in the figure, runs under the Contacting layer 1.
  • a film-like metal heating element 2 or 3 is provided on both sides of the strip 1.
  • Both heating elements 2, 3 are delimited in the y direction by edges R1, R2, R3 and R4, which in the xy plane is curved. It can clearly be seen that the width Bij of a heating element 2 or 3 varies for different x values.
  • a contact field 4, 5, 6, 7 is electrically connected to the heating element 2, 3.
  • the contacting faces are preferably formed as a thick (approx. 700 nm) gold layer, so that they have the lowest possible electrical resistance.
  • Themaschineticiansfeider 4 to 7 are used to apply a heating voltage to the heating elements. The voltage is supplied to the contacting feet by means of contacting wires, which are not shown in FIG. 1, however.
  • the edges R1, R2, R3 and R4 of the two heating elements 2, 3 are curved.
  • the course of an edge in the xy plane can be described as a function y (x) with O ⁇ x ⁇ L.
  • the limiting function y2 (x) for O ⁇ x ⁇ L describes the edge of the heating element 2 for small y values and the limiting function y1 (x) for d ⁇ x ⁇ (Ld) describes the edge for large y values.
  • the course of the edge of the other heating element 3 describes the limiting function y3 (x) for O ⁇ x ⁇ L with large y values and the limiting function y4 (x) for d ⁇ x ⁇ (Ld) with small y values.
  • the heating elements end with the component facets shown as vertical lines.
  • the temperature of the waveguide is varied locally.
  • the influence of the further heating element 3 must also be taken into account. Because the difference y3 (x) - y4 (x) varies in the x direction, the heating element 3 also heats up differently in the xy plane.
  • Limiting functions y3 (x) and y4 (x) and the choice of material for the heating element the temperature distribution in the heating element 3 and in its surroundings is varied locally.
  • the difference y3 (x) - y4 (x) in the x direction and also by varying the distance, for example the geometric center (y3 (x) + y4 (x)) / 2 of the heating element 3 from the waveguide the heating element 3 contributes to a local variation in the temperature of the waveguide.
  • the resulting spatial temperature field in the waveguide can be calculated on the basis of the current and heat conduction, the following variables being included: The limiting functions y1 (x) to y4 (x), the material-specific electrical ones Resistances, the material-dependent thermal conductivity values as well as the geometric structure of the component and its heat sink.
  • FIG. 2 shows a second exemplary embodiment of a semiconductor laser 10, which is distinguished from the first exemplary embodiment in that only one heating element 2 is provided.
  • the lower edge of the heating element defined by the function y2 (x) is not curved. Because the heating element 2 has a smaller width in the central region of the waveguide than in outer regions, higher local temperatures are achieved in the middle. The prerequisite for this is that the layer thickness of the heating element in the z direction, the specific electrical resistance and the assumed heat dissipation are homogeneous.
  • Exemplary embodiments each comprise a semiconductor laser 10, which each has a heating element 3.
  • one edge of the heating element 3 is curved (y3 (x) in FIG. 3; y4 (x) in FIG. 4), while the other edge is not curved.
  • the width that is to say the difference y3 (x) - y4 (x) varies in the x direction, so that a different temperature distribution can be achieved.
  • FIG. 5 shows a semiconductor laser 10 which also has a heating element 2.
  • the width that is to say the difference y1 (x) - y2 (x)
  • the distance between the heating element 2 and the contact strip 1 and thus the waveguide below it is varied. Since the distance between heating element 2 ⁇
  • Heating element section 2 ' is provided, which is connected by means of metal wires 9.1, 9.2 to the two heating element sections 3', 3 1 '.
  • the two metal wires 9 thus connect the three parts 2 ', 3', 3 '' of the heating element to form a coherent area in the mathematical sense.
  • the figure also shows that the width of the two heating element sections 3 ', 3 1 1 is constant, while the width of the heating element section 2' varies.
  • FIG. 11 a metal surface 11 is shown in FIG. 11, which is electrically connected to the contact strip 1 and serves as a contact field for the contact strip 1.
  • the local variation of the electrical resistance results from several local potential adjustments, in that a plurality of metal wires 12 are conductively connected to the heating element 2 at different locations.
  • FIG. 13 shows an embodiment with a non-planar surface.
  • the curved heating element 2 crosses the contact strip 1, a conductive connection between the heating element 2 and the contact strip 1 being prevented by an electrically insulating layer 13.
  • the heating voltage is applied between the contacting fields 4 and 6.
  • FIG. 14 shows a modification of the exemplary embodiment shown in FIG. 13.
  • the heating element 2 is also the
  • Contact strips 1 are curved so that the heating element and contact strips cross twice. A conductive connection between the heating element 2 and the contacting strip 1 is also prevented in this case by an electrically insulating layer 13. The Heating voltage itself is applied between the contact fields 4 and 5.
  • FIG. 15 shows an arrangement which has some common features with FIGS. 13 and 14.
  • the optical waveguide and the contacting strip 1 run uncurved in the x direction.
  • the contact strip 1 is supplied with current via the metal surface 11.
  • the heating element 2 is curved in three-dimensional space.
  • the heating voltage is applied between the contacting fields 4 and 6.
  • a conductive connection between the heating element 2 and the contacting strip 1 is prevented by an electrically insulating layer 13.
  • the laser light 14 emerging in the axial direction is also schematically indicated.
  • the exemplary embodiment shown in FIG. 16 represents a variant of the exemplary embodiment shown in FIG. 8, wherein the heating element 2 consists of two different types of metal with different specific resistance and the metal 16 fills the cutouts in the metal 15. It is also conceivable that the metal 15 has no recesses, but forms a homogeneous layer. The metal fields 16 are then attached in the z direction on or below this layer. The shape and distribution of the metal fields 16 can now be used to spatially vary the heating current density. A spatial variation of the temperature can also be achieved in this way. Of course, other designs of a heating element 2 and its arrangement relative to the contact strip 1 are also conceivable in order to achieve a desired temperature distribution in the optical waveguide.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne un composant optoélectronique à répartition spatiale réglable de la température, comprenant un guide d'onde optique et au moins un élément électrothermique pour modifier la température dudit guide d'onde optique. L'élément électrothermique est conçu et/ou monté de telle manière que la température générée dans le guide d'onde optique varie selon l'endroit.
PCT/EP1998/001080 1997-02-27 1998-02-26 Composant optoelectronique Ceased WO1998038710A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU67252/98A AU6725298A (en) 1997-02-27 1998-02-26 Optoelectronic component

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19707879 1997-02-27
DE19707879.6 1997-02-27
DE19717545.7 1997-04-25
DE19717545A DE19717545A1 (de) 1997-02-27 1997-04-25 Optoelektronisches Bauelement mit räumlich einstellbarer Temperaturverteilung

Publications (1)

Publication Number Publication Date
WO1998038710A1 true WO1998038710A1 (fr) 1998-09-03

Family

ID=26034338

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1998/001080 Ceased WO1998038710A1 (fr) 1997-02-27 1998-02-26 Composant optoelectronique

Country Status (2)

Country Link
AU (1) AU6725298A (fr)
WO (1) WO1998038710A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013079346A1 (fr) * 2011-11-30 2013-06-06 Osram Opto Semiconductors Gmbh Diode laser à semi-conducteur
WO2013152862A1 (fr) * 2012-04-12 2013-10-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Procédé et dispositif de réduction d'instabilité de mode dans un guide optique
US20210305776A1 (en) * 2018-08-01 2021-09-30 Osram Oled Gmbh Laser diode chip

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318527A (ja) * 1987-06-22 1988-12-27 Brother Ind Ltd 導波路型光偏向装置
JPH0697604A (ja) * 1992-09-16 1994-04-08 Anritsu Corp 分布反射型半導体レーザ
JPH06125138A (ja) * 1992-10-10 1994-05-06 Anritsu Corp レーザ装置
US5347526A (en) * 1992-03-31 1994-09-13 Kabushiki Kaisha Toshiba Wavelength-tunable semiconductor laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318527A (ja) * 1987-06-22 1988-12-27 Brother Ind Ltd 導波路型光偏向装置
US5347526A (en) * 1992-03-31 1994-09-13 Kabushiki Kaisha Toshiba Wavelength-tunable semiconductor laser
JPH0697604A (ja) * 1992-09-16 1994-04-08 Anritsu Corp 分布反射型半導体レーザ
JPH06125138A (ja) * 1992-10-10 1994-05-06 Anritsu Corp レーザ装置

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 159 (P - 858) 18 April 1989 (1989-04-18) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 364 (E - 1575) 8 July 1994 (1994-07-08) *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 416 (E - 1588) 4 August 1994 (1994-08-04) *
SHINJI SAKANO ET AL: "TUNABLE DFB LASER WITH A STRIPED THIN-FILM HEATER", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 4, no. 4, 1 April 1992 (1992-04-01), pages 321 - 323, XP000272604 *
SHUDONG JIANG ET AL: "TEMPERATURE-MODULATED SEMICONDUCTOR LASER FOR WIDELY TUNABLE AND POWER-CONTROLLED OPERATION", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 31, no. 8, 1 August 1992 (1992-08-01), pages 2432 - 2434, XP000355892 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013079346A1 (fr) * 2011-11-30 2013-06-06 Osram Opto Semiconductors Gmbh Diode laser à semi-conducteur
US9722394B2 (en) 2011-11-30 2017-08-01 Osram Opto Semiconductors Gmbh Semiconductor laser diode
WO2013152862A1 (fr) * 2012-04-12 2013-10-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Procédé et dispositif de réduction d'instabilité de mode dans un guide optique
US9235106B2 (en) 2012-04-12 2016-01-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for reducing mode instability in an optical waveguide
US20210305776A1 (en) * 2018-08-01 2021-09-30 Osram Oled Gmbh Laser diode chip
US12080995B2 (en) * 2018-08-01 2024-09-03 Osram Oled Gmbh Laser diode chip

Also Published As

Publication number Publication date
AU6725298A (en) 1998-09-18

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